JP2004085549A5 - - Google Patents

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JP2004085549A5
JP2004085549A5 JP2003180589A JP2003180589A JP2004085549A5 JP 2004085549 A5 JP2004085549 A5 JP 2004085549A5 JP 2003180589 A JP2003180589 A JP 2003180589A JP 2003180589 A JP2003180589 A JP 2003180589A JP 2004085549 A5 JP2004085549 A5 JP 2004085549A5
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oxygen sensor
sensor according
temperature compensation
film
electrode
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JP3903181B2 (en
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【0012】
【課題を解決するための手段】
上記課題を解決するための本発明は、以下の技術的手段から構成される。
(1)温度依存性を抑えた抵抗型酸素センサであって、
(a)温度及び雰囲気ガスの酸素分圧に応じて抵抗値が変化する酸化物半導体からなるガス検出部分と、抵抗値の酸素分圧依存性を抑えた導体からなる温度補償部分とを直列に接続する、
(b)前記温度補償部分を酸素イオン伝導体で構成する、及び
(c)前記温度補償部分と電気的に接触するための電極が雰囲気ガスに面している、
ことを特徴とする抵抗型酸素センサ。
(2)温度補償部分の形態が、薄膜又は厚膜であり、該膜と電極が、基板、膜、電極の位置関係を有し、かつ電極が多孔質体である、前記(1)記載の抵抗型酸素センサ。
(3)温度補償部分の形態が、薄膜又は厚膜であり、該膜と電極が、基板、電極、膜の位置関係を有し、かつ膜が多孔質体である、前記(1)記載の抵抗型酸素センサ。
)前記温度補償部分として、その温度依存性がガス検出部分のそれと類似であるものを用いることを特徴とする、前記(1)から(3)のいずれかに記載の抵抗型酸素センサ。
)前記温度補償部分として、その温度依存性がガス検出部分のそれと同じであるものを用いることを特徴とする、前記(1)から(3)のいずれかに記載の抵抗型酸素センサ。
)前記ガス検出部分である酸化物半導体が、酸化セリウム又は酸化セリウムを主成分とする複合酸化物である、前記(1)から(3)のいずれかに記載の抵抗型酸素センサ。()前記温度補償部分である酸素イオン伝導体が、酸化セリウムを主成分とする複合酸化物である、前記(1)から(3)のいずれかに記載の抵抗型酸素センサ。
)ヒータを有することを特徴とする、前記(1)から()のいずれかに記載の抵抗型酸素センサ。
)前記(1)から()のいずれかに記載の抵抗型酸素センサを構成要素として含むことを特徴とする酸素センサ装置。
10)一定電圧を負荷できる手段と、電圧を測定できる手段を有する、前記()記載の酸素センサ装置。
11)前記(1)から()のいずれかに記載の抵抗型酸素センサを構成要素として含むことを特徴とする燃焼機関の空燃比を制御するための空燃比フィードバック制御システム。
12)自動車用の空燃比を制御する、前記(11)記載の空燃比フィードバック制御システム。
13)前記(1)から()のいずれかに記載の抵抗型酸素センサを構成要素として含むことを特徴とする自動車排ガス触媒劣化検知システム。
[0012]
[Means for Solving the Problems]
The present invention for solving the above problems comprises the following technical means.
(1) A resistance-type oxygen sensor with reduced temperature dependency,
(A) A gas detection portion made of an oxide semiconductor whose resistance value changes according to the temperature and the oxygen partial pressure of the atmosphere gas, and a temperature compensation portion made of a conductor in which the oxygen partial pressure dependency of the resistance value is suppressed Connecting,
(B) the temperature compensating portion is made of an oxygen ion conductor, and (c) an electrode for electrically contacting the temperature compensating portion faces an atmosphere gas .
A resistance-type oxygen sensor characterized by
(2) The mode of the temperature compensation portion is a thin film or a thick film, the film and the electrode have a positional relationship between the substrate, the film, and the electrode, and the electrode is a porous body. Resistive oxygen sensor.
(3) The mode of the temperature compensation portion is a thin film or a thick film, the film and the electrode have a positional relationship between the substrate, the electrode, and the film, and the film is a porous body. Resistive oxygen sensor.
( 4 ) The resistance-type oxygen sensor according to any one of (1) to (3), wherein the temperature compensation portion has a temperature dependency similar to that of the gas detection portion.
( 5 ) The resistance type oxygen sensor according to any one of (1) to (3), wherein the temperature compensation portion has the same temperature dependency as that of the gas detection portion.
( 6 ) The resistance type oxygen sensor according to any one of (1) to (3) , wherein the oxide semiconductor which is the gas detection portion is cerium oxide or a composite oxide containing cerium oxide as a main component. ( 7 ) The resistance type oxygen sensor according to any one of (1) to (3) , wherein the oxygen ion conductor as the temperature compensation portion is a composite oxide containing cerium oxide as a main component.
( 8 ) The resistance-type oxygen sensor according to any one of (1) to ( 7 ), which has a heater.
( 9 ) An oxygen sensor device comprising the resistance type oxygen sensor according to any one of (1) to ( 8 ) as a component.
( 10 ) The oxygen sensor device according to ( 9 ), which comprises means capable of loading a constant voltage and means capable of measuring a voltage.
( 11 ) An air-fuel ratio feedback control system for controlling an air-fuel ratio of a combustion engine, comprising the resistance-type oxygen sensor according to any one of (1) to ( 8 ) as a component.
( 12 ) The air-fuel ratio feedback control system according to the above ( 11 ), which controls an air-fuel ratio for a motor vehicle.
( 13 ) An automobile exhaust gas catalyst deterioration detection system comprising the resistance type oxygen sensor according to any one of (1) to ( 8 ) as a component.

Claims (13)

温度依存性を抑えた抵抗型酸素センサであって、
(1)温度及び雰囲気ガスの酸素分圧に応じて抵抗値が変化する酸化物半導体からなるガス検出部分と、抵抗値の酸素分圧依存性を抑えた導体からなる温度補償部分とを直列に接続する、
(2)前記温度補償部分を酸素イオン伝導体で構成する、及び
(3)前記温度補償部分と電気的に接触するための電極が雰囲気ガスに面している、
ことを特徴とする抵抗型酸素センサ。
Resistive oxygen sensor with reduced temperature dependence,
(1) A gas detection portion made of an oxide semiconductor whose resistance value changes according to the temperature and oxygen partial pressure of the atmosphere gas, and a temperature compensation portion made of a conductor in which the oxygen partial pressure dependency of the resistance value is suppressed Connecting,
(2) The temperature compensation portion is made of an oxygen ion conductor, and (3) an electrode for electrically contacting the temperature compensation portion faces an atmosphere gas .
A resistance-type oxygen sensor characterized by
温度補償部分の形態が、薄膜又は厚膜であり、該膜と電極が、基板、膜、電極の位置関係を有し、かつ電極が多孔質体である、請求項1記載の抵抗型酸素センサ。The resistive oxygen sensor according to claim 1, wherein the form of the temperature compensation portion is a thin film or a thick film, the film and the electrode have a positional relationship between the substrate, the film and the electrode, and the electrode is a porous body. . 温度補償部分の形態が、薄膜又は厚膜であり、該膜と電極が、基板、電極、膜の位置関係を有し、かつ膜が多孔質体である、請求項1記載の抵抗型酸素センサ。The resistance type oxygen sensor according to claim 1, wherein the form of the temperature compensation portion is a thin film or a thick film, the film and the electrode have a positional relationship of a substrate, an electrode and a film, and the film is a porous body. . 前記温度補償部分として、その温度依存性がガス検出部分のそれと類似であるものを用いることを特徴とする、請求項1から3のいずれかに記載の抵抗型酸素センサ。The resistance type oxygen sensor according to any one of claims 1 to 3, wherein the temperature compensation portion has a temperature dependency similar to that of the gas detection portion. 前記温度補償部分として、その温度依存性がガス検出部分のそれと同じであるものを用いることを特徴とする、請求項1から3のいずれかに記載の抵抗型酸素センサ。The resistance type oxygen sensor according to any one of claims 1 to 3, wherein the temperature compensation portion has the same temperature dependency as that of the gas detection portion. 前記ガス検出部分である酸化物半導体が、酸化セリウム又は酸化セリウムを主成分とする複合酸化物である、請求項1から3のいずれかに記載の抵抗型酸素センサ。The resistance type oxygen sensor according to any one of claims 1 to 3, wherein the oxide semiconductor which is the gas detection portion is cerium oxide or a composite oxide containing cerium oxide as a main component. 前記温度補償部分である酸素イオン伝導体が、酸化セリウムを主成分とする複合酸化物である、請求項1から3のいずれかに記載の抵抗型酸素センサ。The resistance type oxygen sensor according to any one of claims 1 to 3, wherein the oxygen ion conductor as the temperature compensation portion is a composite oxide containing cerium oxide as a main component. ヒータを有することを特徴とする、請求項1からのいずれかに記載の抵抗型酸素センサ。The resistance type oxygen sensor according to any one of claims 1 to 7 , characterized in that it has a heater. 請求項1からのいずれかに記載の抵抗型酸素センサを構成要素として含むことを特徴とする酸素センサ装置。An oxygen sensor device comprising the resistive oxygen sensor according to any one of claims 1 to 8 as a component. 一定電圧を負荷できる手段と、電圧を測定できる手段を有する、請求項記載の酸素センサ装置。10. The oxygen sensor device according to claim 9 , comprising means capable of loading a constant voltage and means capable of measuring a voltage. 請求項1からのいずれかに記載の抵抗型酸素センサを構成要素として含むことを特徴とする燃焼機関の空燃比を制御するための空燃比フィードバック制御システム。An air-fuel ratio feedback control system for controlling an air-fuel ratio of a combustion engine, comprising the resistance type oxygen sensor according to any one of claims 1 to 8 as a component. 自動車用の空燃比を制御する、請求項11記載の空燃比フィードバック制御システム。The air-fuel ratio feedback control system according to claim 11 , which controls an air-fuel ratio for a vehicle. 請求項1からのいずれかに記載の抵抗型酸素センサを構成要素として含むことを特徴とする自動車排ガス触媒劣化検知システム。An automobile exhaust gas catalyst deterioration detection system comprising the resistance type oxygen sensor according to any one of claims 1 to 8 as a component.
JP2003180589A 2002-06-27 2003-06-25 Resistance oxygen sensor, oxygen sensor device using the same, and air-fuel ratio control system Expired - Lifetime JP3903181B2 (en)

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JP2002188650 2002-06-27
JP2003180589A JP3903181B2 (en) 2002-06-27 2003-06-25 Resistance oxygen sensor, oxygen sensor device using the same, and air-fuel ratio control system

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JP2004085549A5 true JP2004085549A5 (en) 2005-06-02
JP3903181B2 JP3903181B2 (en) 2007-04-11

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4431680B2 (en) * 2004-03-22 2010-03-17 独立行政法人産業技術総合研究所 Output stabilization method for resistive oxygen sensor using cerium oxide
JP4625930B2 (en) * 2004-10-19 2011-02-02 独立行政法人産業技術総合研究所 Resistive oxygen sensor and air-fuel ratio control system using it
JP2007008775A (en) * 2005-06-30 2007-01-18 National Institute Of Advanced Industrial & Technology Porous zirconia thick film and method of manufacturing the same
JP4625931B2 (en) * 2006-05-26 2011-02-02 独立行政法人産業技術総合研究所 Resistive oxygen sensor element without temperature dependency of output
JP5112266B2 (en) 2007-11-30 2013-01-09 ヤマハ発動機株式会社 Control device for oxygen sensor for motor vehicle, air-fuel ratio control device including the same, and motor vehicle
JP6442574B2 (en) * 2017-03-16 2018-12-19 太平洋セメント株式会社 Nanoparticle aggregate, nanoparticle fired product, and production method thereof

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JPS5790147A (en) * 1980-11-26 1982-06-04 Toyota Central Res & Dev Lab Inc Air-fuel ratio gauge
JPS57132051A (en) * 1981-02-10 1982-08-16 Ngk Spark Plug Co Ltd Air-fuel ratio measuring sensor and air-fuel ratio measuring method using said sensor
JPS5824850A (en) * 1981-08-07 1983-02-14 Toyota Central Res & Dev Lab Inc Film type oxygen sensor with heater and oxygen detector employing said sensor
JP2695938B2 (en) * 1989-09-18 1998-01-14 日本特殊陶業株式会社 Gas detector
EP0464243B1 (en) * 1990-07-04 1995-06-14 Siemens Aktiengesellschaft Oxygen sensor with semiconducting gallium oxide
DE59009247D1 (en) * 1990-07-04 1995-07-20 Siemens Ag Sensor for the detection of reducing gases.
JP2811976B2 (en) * 1991-02-26 1998-10-15 トヨタ自動車株式会社 Oxide semiconductor gas sensor
DE4432729C1 (en) * 1994-09-14 1996-04-11 Siemens Ag Gas sensor

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