JP2004079833A - Vertical resonator type surface emission semiconductor laser - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve such a problem that a conventional junction-down mounting type surface emission laser, where a substrate is opaque against laser light and the laser light is picked up from an opening made on the rear surface, suffers from low heat dissipation owing to the opening in the rear surface, and hence cannot sufficiently reduce thermal resistance. <P>SOLUTION: The thickness of a semiconductor layer between an active layer and a light emitting surface is made to be 8μm or more, a heat produced in a light emission part can be dissipated through a route allowing the heat to directly flow from the light emission part to a heat sink, as well as a route allowing the heat to spread from the light emission part to the side of a substrate. Therefore, thermal resistance of a component can be reduced. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a vertical cavity surface emitting semiconductor laser that emits laser light in a direction perpendicular to one main surface of a substrate.
[0002]
[Prior art]
A vertical cavity surface emitting semiconductor laser (hereinafter, referred to as a surface emitting laser) is an edge emitting type laser that can be manufactured without cleaving an end face, can be formed in a two-dimensional array, and can easily make an output beam circular. Attention has been paid to features that semiconductor lasers do not have.
[0003]
The most common structure of a surface emitting laser is a stacked structure in which a pair of distributed Bragg reflection type semiconductor multilayer mirrors (hereinafter, referred to as DBR mirrors) are arranged above and below an active layer on a semiconductor substrate. Is well known, and a current is injected from an electrode formed outside the DBR mirror via the DBR mirror. In a surface emitting laser having such a structure, the thermal resistance of the element is much higher than that of an edge emitting type semiconductor laser, and the temperature inside the active layer rises compared to the outside of the element due to heat generated by energization during laser oscillation. It is also known to do.
As one of the methods for reducing the thermal resistance of a surface emitting laser, a so-called junction-down type in which the surface of a substrate having a pn junction serving as a heat source is mounted on a heat sink, so that laser light is emitted from the surface of the substrate. There is a method of taking out from the back side instead. In the junction-down type, when the substrate is transparent to the laser light, the laser light can be easily extracted from the back surface of the substrate. However, when the substrate is opaque, the light must be applied to the substrate to extract the laser light. It is necessary to provide a hole for taking out.
[0004]
FIG. 5 is a structural sectional view showing a conventional example of a surface emitting laser having a configuration in which a substrate is opaque to laser light and a laser light is extracted from the back surface of the substrate. A configuration similar to the surface emitting laser having such a configuration is described in, for example, ELECTRONICS LETTERS Vol. 25 No. 24 pp. 1644-1645 (issued November 23, 1989).
In the surface emitting laser shown in FIG. 5, since the active layer has a multiple quantum well (MQW) structure using GaAs as the quantum well, the oscillation wavelength is about 850 nm, and the laser light is emitted by the GaAs substrate. Since the substrate is absorbed, a hole is formed in the substrate from the back surface, and a laser beam is extracted therefrom.
[0005]
Hereinafter, the manufacturing method of the conventional example shown in FIG. 5 will be briefly described. First, n-type on a GaAs substrate 408, n-type GaAlAs-based DBR mirror 407, n-type _Ga 0.7 _Al 0.3 As cladding layer 406, GaAs based MQW active layer 405, p-type _Ga 0.7 _{Al 0. A 3} As clad layer 404, a p-type GaAlAs-based DBR mirror 403, and a p-type GaAs contact layer 402 are sequentially grown by MOCVD. At this time, the GaAlAs-based DBR mirror is formed by alternately and repeatedly laminating Ga _0.9 Al _0.1 As and Ga _0.2 Al _0.8 As each having an optical film thickness which is a quarter wavelength of the oscillation wavelength. In a surface emitting laser having a wavelength of 850 nm, in the case of this combination of materials, the number of repetitions is about 20 for the DBR mirror on the substrate side and about 30 for the DBR mirror on the side opposite to the substrate. Is common. Next, high-resistance regions 410 for current constriction are formed by selectively implanting protons from the substrate surface. Next, formation of the p-side electrode 401, polishing of the back surface of the substrate, and formation of the n-side electrode 409 are sequentially performed, and then the back surface is selectively etched to form an opening for extracting light.
[0006]
When the surface-emitting laser fabricated by the above procedure is mounted on a heat sink using a so-called junction-down type, the distance between the active layer and the heat source and the heat source becomes much shorter than when mounted on a so-called junction-up type. Therefore, it is possible to reduce the thermal resistance of the element. When the thermal resistance of the element becomes small, the temperature rise of the active layer at the time of current injection becomes small, so that high-temperature operation and high-output operation become possible.
[0007]
[Problems to be solved by the invention]
As described above, the junction-down type mounting makes it possible to reduce the thermal resistance of the element as compared with the junction-up type. However, in the case where the substrate is opaque to the oscillation wavelength as in the conventional example, if an opening for taking out the laser beam is formed on the back surface, the more the element without the opening is mounted in the junction-down type, the more the element becomes. Thermal resistance cannot be reduced. This is because the thickness of the semiconductor layer from the light emitting portion serving as a heat source to the light emitting surface from which the laser light is emitted to the outside of the element becomes extremely thin, about 2.5 to 3 μm, due to the opening provided in the substrate. This is because the heat radiation effect in the path for dissipating heat to the heat sink while spreading from the heat source to the substrate side is reduced.
[0008]
Thus, compared to a surface-emitting laser that is transparent to the oscillation wavelength and can be mounted in a junction-down type without providing an opening in the back surface, the substrate is opaque to the oscillation wavelength and the opening in the back surface In a surface emitting laser that cannot be mounted in a junction-down type without the provision of a device, there is a problem that the improvement in the device characteristics such as the light output characteristic and the temperature characteristic due to the improvement in the thermal resistance by the junction-down mounting type is small. The present invention has been made in order to solve the above-mentioned problem, and in a surface emitting laser having a structure in which a substrate is opaque to an oscillation wavelength and a laser beam is extracted by providing an opening from the back surface of the substrate, It is an object of the present invention to provide an element having reduced thermal resistance and excellent high-temperature and high-output operation.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, according to the present invention, a substrate, a first distributed Bragg reflection type semiconductor multilayer mirror formed on an upper portion of the substrate, and the first distribution An active layer formed on the Bragg reflection type semiconductor multilayer reflector; and a second distributed Bragg reflection type semiconductor multilayer reflector formed on the active layer; The wavelength is shorter than the bandgap wavelength of the substrate, a laser beam is extracted from a hole provided on the back side of the substrate, and the total thickness of the semiconductor layer provided between the active layer and the light emitting surface. Is 8 μm or more.
When a surface emitting laser having such a configuration is mounted on a heat sink in a junction-down type, the thickness of the semiconductor layer between the active layer and the light emitting surface is sufficiently large. The heat radiation effect of the heat generated in the path for dissipating heat to the heat sink while spreading to the substrate side is improved, and the thermal resistance of the element can be reduced as compared with the conventional case. As the thermal resistance of the device decreases, the light output characteristics and the temperature characteristics are improved.
The above-mentioned effect can be expected if the thickness of the semiconductor layer between the active layer and the light emitting surface is sufficiently large and 8 μm or more, but the upper limit is desirably 13 μm or less. The reason is that when the thickness is 13 μm or more, the thermal resistance of the element becomes almost constant, and when the thickness is further increased, the element characteristics hardly change.
[0010]
Next, in the invention according to claim 2, by providing a semiconductor layer having a thickness of 5 μm or more between the active layer and the distributed Bragg reflection type semiconductor multilayer mirror provided between the active layer and the substrate, The thickness of the semiconductor layer between the active layer and the light emitting surface can be made sufficiently large, and the thermal resistance of the device is reduced.
If the thickness of the semiconductor layer between the active layer and the distributed Bragg reflection type semiconductor multilayer mirror provided between the active layer and the substrate is set to 5 μm or more, the thermal resistance of the element can be reduced. The upper limit is desirably 10 μm or less.
[0011]
Next, in the invention according to claim 3, by providing a distributed Bragg reflection type semiconductor multilayer film reflecting mirror provided between the active layer and the substrate and a semiconductor layer having a thickness of 5 μm or more between the substrate, The thickness of the semiconductor layer between the active layer and the light emitting surface can be made sufficiently large, and the thermal resistance of the device is reduced.
The thickness of the distributed Bragg reflection type semiconductor multilayer mirror provided between the active layer and the substrate and the thickness of the semiconductor layer provided between the substrates are also preferably 5 μm or more, and more preferably 10 μm or less.
[0012]
Next, in the invention according to claim 4, between the active layer, the semiconductor layer provided between the active layer and the substrate, the distributed Bragg reflection type semiconductor multilayer mirror, and between the active layer and the substrate. The total thickness of the distributed Bragg reflection type semiconductor multilayer film reflecting mirror provided on the substrate and the semiconductor layer provided between the substrates is at least 5 μm, so that the semiconductor layer between the active layer and the light emitting surface is formed. Can be made sufficiently thick, and the thermal resistance of the element is reduced.
[0013]
Next, in the invention according to claim 5, the substrate, the first distributed Bragg reflection type semiconductor multilayer reflector formed on the upper portion of the substrate, and the first distributed Bragg reflection type semiconductor multilayer reflector are formed. An active layer formed on the active layer; and a second distributed Bragg reflection type semiconductor multilayer film reflecting mirror formed on the active layer, wherein an emission wavelength of the active layer is higher than a bandgap wavelength of the substrate. Laser light is extracted from a hole provided on the back surface side of the substrate, and a semiconductor layer that is transparent to the laser light and has a higher thermal conductivity than the substrate is formed in the opening. Provide a laser. When a surface emitting laser having such a configuration is mounted on a heat sink in a junction-down type, an active layer, that is, an active layer during current injection is provided because a semiconductor layer having a high thermal conductivity is provided in an opening provided on the back surface of the substrate. The heat radiation effect of the heat generated in the light emitting portion in the path of dissipating heat to the heat sink while spreading to the substrate side is improved, and the thermal resistance of the element can be reduced as compared with the related art. As the thermal resistance of the device decreases, the light output characteristics and the temperature characteristics are improved.
[0014]
Next, in the invention according to claim 6, wherein the substrate is _{GaAs, In 1-x (Ga} 1-y Al y) x P -based material is used for the active layer, the oscillation wavelength is 620~690nm A surface emitting laser is provided.
Since the oscillation wavelength using _{In 1-x (Ga 1-} y Al y) x P -based material in the active layer is a red surface emitting laser 620～690Nm, gain reduction due to the temperature rise is very pronounced The improvement in element characteristics due to the reduction in the thermal resistance of the element becomes even more remarkable.
[0015]
Next, in the invention according to claim 7, wherein the substrate is GaAs, the semiconductor layer provided between the light emitting surface from the active _{layer, Ga} 1-z _Al z As-based material or _{an In 1-} to provide a surface emitting laser using the _{x (Ga 1-y Al y} ) x P material.
Ga _{1-z Al} z As-based material, or _{In 1-x (Ga 1-} y Al y) x P -based material, since it is possible to lattice-matched to GaAs substrate, sufficient thickness without reducing the crystal quality Semiconductor layers can be stacked.
[0016]
Next, in the invention according to claim 8, of the semiconductor layer provided between the light emitting surface from the active layer, closest to the semiconductor layer to the substrate is _{In 1-x (Ga 1-} y Al y) It provides a surface emitting an _{x P-based} material.
By providing an opening in the back surface, the semiconductor layer in contact with the exposed element external With _{In 1-x (Ga 1-} y Al y) x P -based _material, a _Ga 1-z _Al z As-based material As compared with the case of using, it is possible to suppress the absorption of moisture from the outside, and a highly reliable surface emitting laser can be realized.
[0017]
Next, in the invention according to claim 9, the semiconductor layer that is transparent to the laser light formed in the opening and has higher thermal conductivity than the substrate is made of any one of GaN, AlN, SiC, and diamond. , Or a combination thereof.
GaN, the semiconductor material of the AlN, SiC, etc. _{diamond, GaAs, In 1-x (} Ga 1-y Al y) x P, as compared with the semiconductor material, such as _Ga 1-z _Al z As, the thermal conductivity is very Because of the high material, the heat radiation effect is remarkably improved, and the element characteristics are further improved.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(1st Embodiment)
The first embodiment of the present invention is a surface-emitting laser having an emission wavelength of about 660 nm using an InGaAlP-based quantum well structure for an active layer.
FIG. 1 is a sectional view showing a schematic configuration of a surface emitting laser according to the present embodiment.
[0019]
Hereinafter, a manufacturing procedure of the surface emitting laser according to the present embodiment will be described. First, on one main surface of an n-type GaAs substrate 110, an n-type InGaP layer 109, an n-type GaAlAs layer 108, an n-type GaAlAs-based DBR mirror 107, an n-type InGaAlP cladding layer 106, and an emission peak wavelength of 650 nm. The adjusted InGaAlP-based MQW active layer 105, p-type InGaAlP clad layer 104, p-type GaAlAs-based DBR mirror 103, and p-type GaAs contact layer 102 are sequentially stacked by crystal growth by MOCVD. Next, a high-resistance region 112 is formed by selectively ion-implanting protons in a region excluding a circular region having a diameter of 10 μm serving as a light-emitting region, thereby forming a current constriction portion. Next, the p-side electrode 101 was formed on substantially the entire surface of the substrate, and then the back surface of the n-type GaAs substrate 110 was polished to a thickness of 120 μm including the laminated semiconductor layers. Thereafter, an n-side electrode 111 is formed in a region excluding a circular region having a diameter of 80 μm and concentric with the current constriction portion on the back surface of the substrate. Lastly, by etching a region where the n-side electrode 111 is not formed, a hole for extracting a laser beam is formed, and a surface emitting laser as shown in FIG. 1 is completed. At this time, the etching for forming the opening was performed using dry etching of about 100 μm using chlorine-based RIE (Reactive Ion Etching) using a resist as a mask, and wet etching using a sulfuric acid-based etchant. The p-type InGaP layer 109 can function as an etching stop layer when etching GaAs with a sulfuric acid-based etchant. In addition, the GaAlAs-based DBR mirror alternately and repeatedly laminated Ga _0.5 Al _0.5 As and Ga _0.05 Al _0.95 As, each of which has an optical film thickness which is a quarter wavelength of the oscillation wavelength. The structure was such that the number of repetitions was 30 for the n-type DBR mirror on the substrate side and 50.5 for the DBR mirror on the opposite side to the substrate. Further, in the GaAlAs layer 108 provided between the n-type DBR mirror 107 and the n-type GaAs substrate, the Al composition is 0.7, the film thickness is about 6.5 μm, and in the p-type InGaP layer 109, the film thickness is about It was 0.5 μm. Since the thickness of the n-side DBR mirror 107 is about 3 μm, the total film thickness of the semiconductor layer from the active layer to the laser light emission surface is about 10 μm. Note that the InGaP layer 109 not only functions as the etching stop layer described above, but also functions as a protective layer effective for realizing a device having high long-term reliability by suppressing absorption of moisture from the outside of the device. If you do. The total thickness of the n-type InGaAlP cladding layer 106, the InGaAlP-based MQW active layer 105, and the p-type InGaAlP cladding layer is about 0.2 μm, but more strictly, the resonance wavelength of the resonator is 660 nm. Has been adjusted.
[0020]
The surface emitting laser of FIG. 1 manufactured as described above is mounted in a junction-down type so that the p-side electrode 101 contacts a heat sink, and is operated by externally injecting current. At this time, since the thickness of the semiconductor layer from the active layer to the light emission surface is about 10 μm, which is sufficient, the heat generated in the light emitting section is a path through which heat flows directly from the light emitting section to the heat sink. In addition, it is possible to dissipate heat even in a path in which heat flows while spreading from the light emitting unit to the substrate side. As a result, not only is the thermal resistance of the element lower than in the case of a general junction-up type structure, but also the junction-down type having a back surface opening has a lower thermal resistance than the conventional example of FIG. The resistance is further reduced.
[0021]
When a surface emitting laser having a back surface opening is mounted in a junction-down type, the thermal resistance of the element strongly depends on the thickness of the semiconductor layer from the active layer to the light emitting surface. FIG. 2 is a graph showing the result of calculating the thermal resistance when the thickness of the n-type GaAlAs layer 108 is changed by simulation with respect to the surface emitting laser having substantially the same configuration as the embodiment of FIG. Here, four cases are shown in which the current constriction diameter of the element is 5, 10, 15, and 20 μm. The horizontal axis of the graph is not the thickness of the n-type GaAlAs layer 108 but the total thickness (t) of the semiconductor layer from the active layer to the light emitting surface. As can be seen from FIG. 2, the thermal resistance decreases with increasing t. However, in any case where the current constriction diameter of the element is increased, the thermal resistance rapidly decreases with increasing t until t is about 8 μm. However, it can be seen that when t exceeds 8 μm, the value settles to a substantially constant value. Therefore, the total thickness of the semiconductor layer from the active layer to the light emitting surface should be 8 μm or more.
From FIG. 2, it is theoretically good that the total thickness of the semiconductor layer from the active layer to the light emitting surface is 8 μm or more, for example, 40 μm or more. However, since the crystal quality may be deteriorated, the thickness is preferably 13 μm or less at which the thermal resistance becomes almost constant.
[0022]
(Second embodiment)
Similarly to the first embodiment, the second embodiment of the present invention is a surface emitting laser having an active layer of an InGaAlP-based quantum well structure and having an oscillation wavelength of about 660 nm.
FIG. 3 is a cross-sectional view illustrating a schematic configuration of the surface emitting laser according to the present embodiment.
[0023]
Hereinafter, a manufacturing procedure of the surface emitting laser according to the present embodiment will be described. First, on one main surface of an n-type GaAs substrate 209, an n-type InGaP layer 208, an n-type GaAlAs-based DBR mirror 207, an n-type InGaAlP clad layer 206, and an InGaAlP-based MQW adjusted to have an emission peak wavelength of 650 nm. An active layer 205, a p-type InGaAlP cladding layer 204, a p-type GaAlAs-based DBR mirror 203, and a p-type GaAs contact layer 202 are sequentially laminated by MOCVD. Next, a high-resistance region 211 is formed by selectively ion-implanting protons in a region excluding a circular region having a diameter of 10 μm serving as a light-emitting region, thereby forming a current confinement portion. Next, the p-side electrode 201 was formed on substantially the entire surface of the substrate, and then the back surface of the n-type GaAs substrate 209 was polished to a thickness of 120 μm including the stacked semiconductor layers. Thereafter, an n-side electrode 210 is formed in a region excluding a circular region having a diameter of 80 μm and concentric with the current constriction portion on the back surface of the substrate. Finally, by etching the region where the n-side electrode 210 is not formed, a hole for extracting a laser beam is formed, and a surface emitting laser as shown in FIG. 2 is completed.
[0024]
When the second embodiment is compared with the first embodiment, the n-type InGaAlP cladding layer 206 has a very large thickness of about 6.5 μm, and the n-type InGaAlP cladding layer 206 has a very large thickness. The configuration is almost the same except that there is no semiconductor layer corresponding to the GaAlAs layer 108. Further, as in the first embodiment, the thickness of the semiconductor layer from the active layer to the light emitting surface is about 10 μm, and when mounted in a junction-down type, the thermal resistance of the element is sufficiently reduced. . Furthermore, in the second embodiment having the above configuration, the resonator length is about 6.6 μm, which is longer than that of the first embodiment, so that the diffraction loss of light with respect to higher-order transverse modes is large. Therefore, it is possible to expect a secondary effect that laser becomes easy in the basic transverse mode.
[0025]
(Third embodiment)
Similarly to the first and second embodiments, the third embodiment of the present invention is also a surface emitting laser using an InGaAlP-based quantum well structure for an active layer and having an oscillation wavelength of about 660 nm.
FIG. 4 is a sectional view showing a schematic configuration of the surface emitting laser according to the present embodiment.
[0026]
Hereinafter, a manufacturing procedure of the surface emitting laser according to the present embodiment will be described. First, on one main surface of an n-type GaAs substrate 308, an n-type GaAlAs-based DBR mirror 307, an n-type InGaAlP clad layer 306, an InGaAlP-based MQW active layer 305 adjusted to have an emission peak wavelength of 650 nm, and a p-type An InGaAlP cladding layer 304, a p-type GaAlAs-based DBR mirror 303, and a p-type GaAs contact layer 302 are sequentially stacked by crystal growth by MOCVD. Next, a high-resistance region 311 is formed by selectively ion-implanting protons in a region excluding a circular region having a diameter of 10 μm serving as a light-emitting region, and a current confinement portion is manufactured. Next, the p-side electrode 301 was formed on substantially the entire surface of the substrate, and then the back surface of the n-type GaAs substrate 308 was polished to a thickness of 120 μm including the stacked semiconductor layers. Thereafter, an AlN layer 310 is deposited on the back surface of the substrate by using a sputtering method. Finally, after the AlN layer 310 in a region other than the opening is removed by etching, an n-side electrode 309 is formed, and a surface emitting laser having a structure as shown in FIG. 4 is completed.
The surface emitting laser of FIG. 4 manufactured as described above is mounted in a junction-down type so that the p-side electrode 301 contacts a heat sink, and is operated by externally injecting current. At this time, since the AlN layer having high thermal conductivity is provided in the opening for extracting the laser light, the heat generated in the light emitting unit is added to the path in which the heat flows from the light emitting unit directly to the heat sink. It is possible to dissipate heat even in a path in which heat flows while spreading from the light emitting unit to the substrate side. As a result, not only is the thermal resistance of the element lower than in the case of a general junction-up type structure, but also the junction-down type having a back surface opening has a lower thermal resistance than the conventional example of FIG. The resistance is further reduced. Here, AlN was used as the layer having a high thermal conductivity in the opening, but it goes without saying that a similar effect can be obtained by using a material such as GaN, SiC, or diamond.
[0027]
【The invention's effect】
As described in detail above, in the surface emitting laser having a structure in which the substrate is opaque to the oscillation wavelength and an opening is provided from the back surface of the substrate to extract the laser light, the surface emitting laser of the present invention is provided with a junction down type heat sink. By mounting the device, it is possible to significantly reduce the thermal resistance of the element. As a result, the maximum light output and the maximum continuous oscillation temperature of the device can be improved as compared with the related art.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a schematic configuration of a vertical cavity surface emitting semiconductor laser according to a first embodiment.
FIG. 2 shows the dependence of the thermal resistance on the thickness of the semiconductor layer from the active layer to the laser beam emission surface.
FIG. 3 is a schematic configuration diagram of an element surface of a vertical cavity surface emitting semiconductor laser according to a second embodiment.
FIG. 4 is a schematic configuration diagram of an element surface of a vertical cavity surface emitting semiconductor laser according to a third embodiment.
FIG. 5 is a sectional view showing a schematic configuration of a vertical cavity surface emitting semiconductor laser having a conventional structure.
[Explanation of symbols]
101, 201, 301, 401 ... p-side electrodes 102, 202, 302, 402 ... p-type GaAs contact layers 103, 203, 303, 403 ... p-type GaAlAs-based DBR mirrors 104, 204, 304, 404... P-type InGaAlP cladding layers 105, 205, 305, 405... InGaAlP-based MQW active layers 106, 206, 306, 406. N-type GaAlAs layers 109 and 208 n-type InGaP layers 110, 209, 308, and 408 n-type GaAs substrates 111, 210, 309, and 409 n-side electrodes 112 211, 311, 410... High resistance region 310... AlN layer

Claims (9)

A substrate, a first distributed Bragg reflection type semiconductor multilayer reflector formed on the substrate, an active layer formed on the first distributed Bragg reflection type semiconductor multilayer reflector, A second distributed Bragg reflection type semiconductor multilayer film reflecting mirror formed at the top of the layer, wherein the emission wavelength of the active layer is shorter than the bandgap wavelength of the substrate, and is provided on the back side of the substrate. A vertical cavity surface emitting semiconductor laser, wherein a total thickness of a semiconductor layer provided between the active layer and the light emitting surface is 8 μm or more. 2. The vertical cavity surface emitting device according to claim 1, wherein a thickness of a semiconductor layer provided between the active layer and the first distributed Bragg reflection type semiconductor multilayer mirror is 5 [mu] m or more. Semiconductor laser. 2. The vertical resonator type surface according to claim 1, wherein a thickness of a semiconductor layer provided between the first distributed Bragg reflection type semiconductor multilayer mirror and the light emitting surface is 5 [mu] m or more. Light emitting semiconductor laser. A thickness of a semiconductor layer provided between the active layer and the first distributed Bragg reflection type semiconductor multilayer film reflector, and a thickness between the first distributed Bragg reflection type semiconductor multilayer film reflector and the light emitting surface; 2. The vertical cavity surface emitting semiconductor laser according to claim 1, wherein the total thickness of the provided semiconductor layers is 5 μm or more. A substrate, a first distributed Bragg reflection type semiconductor multilayer reflector formed on the substrate, an active layer formed on the first distributed Bragg reflection type semiconductor multilayer reflector, A second distributed Bragg reflection type semiconductor multilayer film reflecting mirror formed at the top of the layer, wherein the emission wavelength of the active layer is shorter than the bandgap wavelength of the substrate, and is provided on the back side of the substrate. Laser light is extracted from the hole, and a semiconductor layer or an insulator layer that is transparent to the laser light and has higher thermal conductivity than the substrate is formed in the opening. Type surface emitting semiconductor laser. Wherein the substrate is _{GaAs, In 1-x (Ga} 1-y Al y) x P -based material is used for the active layer, the oscillation wavelength of claims 1 to 5, characterized in that the 620~690nm The vertical cavity surface emitting semiconductor laser according to any one of the above. Wherein the substrate is GaAs, the semiconductor layer provided between the light emitting surface from the active _{layer, Ga} 1-z _Al z As-based material, or _{In 1-x (Ga 1-} y Al y) x P 5. The vertical cavity surface emitting semiconductor laser according to claim 1, wherein the vertical cavity surface emitting semiconductor laser is a series material. Among the semiconductor layers provided between the active layer and the light emitting surface, the semiconductor layer closest to the substrate is made of an In1 _-x (Ga1 _{- yAly} ) _xP- based material. The vertical cavity surface emitting semiconductor laser according to claim 1. The semiconductor layer or the insulator layer, which is transparent to the laser beam formed in the opening and has higher thermal conductivity than the substrate, is made of any of GaN, AlN, SiC, diamond, or a combination thereof. 6. The vertical cavity surface emitting semiconductor laser according to claim 5, wherein:

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