JP2004068079A - Sputtering apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a sputtering apparatus which inhibits a shield from expanding and contracting due to the heat of the shield by reducing a temperature change in the shield and keeping it at a constant temperature, and prevents a metal film adhering to the inner wall of the shield from peeling off. <P>SOLUTION: The sputtering apparatus having the shield 4 installed on the inner wall of a treatment chamber 1, a target 3 installed on the top of the treatment chamber 1, and a stage 5 installed on a lower part of the treatment chamber 1, for performing sputtering treatment of a wafer 6 fixed on the stage 5, comprises a pipe 7 installed on the external wall of the shield 4, and a device 8 for producing water of a constant temperature, which is connected to the pipe 7 and controls the temperature of the shield 4 by passing a solvent in the pipe 7. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a sputter processing apparatus used for a sputter (vapor deposition) process in a semiconductor manufacturing process.
[0002]
[Prior art]
In general, in a manufacturing process of a semiconductor device such as an IC or an LSI, in a wiring process or the like, a method called sputtering in which a mass of a high-purity metal to be processed called a target is irradiated with ions and fine particles of the metal to be processed adhere to a wafer. Used.
[0003]
FIG. 4 is a sectional view showing a conventional sputter processing apparatus.
In FIG. 4, 1 is a processing chamber, 2 is a lid of the processing chamber, 3 is a target attached to the lid 2 of the processing chamber, and this target 3 is a material to be sputtered on the wafer 6. Reference numeral 4 denotes a shield for covering the inner wall of the processing chamber 1, in which processing of the wafer 6 is performed. Reference numeral 5 denotes a stage provided at the lower part of the processing chamber 1, and when processing the wafer 6, the wafer 6 is fixed on the stage 5.
[0004]
[Problems to be solved by the invention]
By the way, in the case of the above-mentioned conventional sputter processing apparatus, there were the following problems.
That is, when performing the sputtering process, the inside of the processing chamber is at a high temperature of about 200 ° C., depending on conditions. However, during processing and during non-processing (during standby and during non-processing), the temperature is high during processing and low during non-processing due to the process state inside the processing chamber. There is a difference. Further, the metal sputtered from the target is sprayed downward not only on the wafer but also on the entire processing chamber and adheres to the inner wall of the shield. There is a problem that the metal film adhered to the inner wall of the shield is cracked or peeled off due to expansion and contraction due to the temperature difference of the shield, becomes a foreign substance, and is re-adhered to the wafer.
[0005]
The present invention has been made in order to solve such a conventional problem, and reduces the temperature change of the shield, suppresses the expansion and contraction of the shield by heat by maintaining the temperature at a constant temperature, and adheres to the inner wall of the shield. It is an object of the present invention to provide a sputtering apparatus capable of preventing a metal film from peeling off.
Another object of the present invention is to provide a sputter processing apparatus capable of suppressing the adhesion of a metal film to the inner wall of a shield, thereby suppressing the generation of foreign substances and preventing the adhesion of foreign substances to a wafer.
[0006]
[Means for Solving the Problems]
A sputter processing apparatus according to the present invention includes a shield provided on an inner wall of a processing chamber, a target provided on an upper part of the processing chamber, and a stage provided on a lower part of the processing chamber. In a sputter processing apparatus for performing a sputter process by fixing a wafer, a pipe attached to an outer wall of the shield, and a temperature control unit connected to the pipe and configured to control a temperature of the shield by flowing a solvent through the pipe. It is a thing.
[0007]
Further, a sputter processing apparatus according to the present invention includes a temperature detecting means for detecting the temperature of the shield, and the temperature control means performs feedback control of the temperature of the shield based on the temperature detected by the temperature detecting means. .
[0008]
Further, a sputter processing apparatus according to the present invention uses a thermocouple attached to an outer wall of the shield as the temperature detecting means.
[0009]
Further, in the sputter processing apparatus according to the present invention, the temperature control means has a temperature controller for adjusting the temperature of the solvent.
[0010]
Further, the sputter processing apparatus according to the present invention uses a constant temperature water generator as the temperature control means.
[0011]
Further, a sputter processing apparatus according to the present invention includes a shield provided on an inner wall of the processing chamber, a target provided on an upper part of the processing chamber, and a stage provided on a lower part of the processing chamber. In a sputter processing apparatus for performing a sputter process by fixing a wafer on an upper side, the inner side of the shield is provided so as to form a double structure with the shield, the inner side having a plurality of downward fins. An inert gas is caused to flow through the gap, and the inert gas is blown downward from between the inner fins.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 is a sectional view showing a sputtering apparatus according to Embodiment 1 of the present invention.
In FIG. 1, 1 is a processing chamber, 2 is a lid of the processing chamber, 3 is a target attached to the lid 2 of the processing chamber, and this target 3 is to be sputtered on the wafer 6. For example, high-purity (99.9% or more) aluminum is used. Reference numeral 4 denotes a shield which substantially covers the inner wall of the processing chamber 1, in which the processing of the wafer 6 is performed. As the material of the shield 4, for example, SUS316 is used. Reference numeral 5 denotes a stage provided at the lower part of the processing chamber 1, and when processing the wafer 6, the wafer 6 is fixed on the stage 5. As the material of the stage 5, for example, SUS304 is used. As the wafer 6 to be sputtered, for example, an Si wafer having a diameter of 8 inches is used.
[0013]
A pipe 7 is spirally welded and fixed to the outer wall of the shield 4. As the material of the pipe 7, a SUS304 sanitary pipe is used. Reference numeral 8 denotes a constant temperature water generator serving as a temperature control means, which is connected to the pipe 7 via a connection tube 9 and supplies a solvent whose temperature has been adjusted to a constant temperature, for example, about 30 ° C., to the pipe 7. . As the solvent, for example, ethylene glycol diluted 1: 1 with water is used.
[0014]
Next, the operation will be described.
In the constant temperature water generator 8, the temperature of the solvent is controlled to a constant temperature, and the solvent circulates in the pipe 7 through the connection tube 9, so that the precision of the entire surface of the shield 4 can be improved regardless of whether the processing is performed or not. Temperature control can be performed. Further, at the time of the sputtering process, the metal sputtered from the target 3 also adheres to the inner wall of the shield 4, but the temperature of the shield 4 is always kept constant even after the process process is completed and the non-processed state is reached. Therefore, there is no expansion and contraction of the shield 4 due to heat, and it is possible to suppress the generation of foreign matter due to cracking or peeling of the attached metal film.
[0015]
In this manner, in the present embodiment, the solvent at a constant temperature from the constant temperature water generator is circulated in the pipe attached to the outer wall of the shield forming the inner wall of the processing chamber, and the temperature of the shield is controlled. The temperature difference between when the product is processed and when it is not processed can be reduced, foreign substances can be prevented from peeling off due to heat shrinkage of the shield, and product quality and yield can be improved.
[0016]
Embodiment 2 FIG.
FIG. 2 is a sectional view showing a sputter processing apparatus according to Embodiment 2 of the present invention. In FIG. 2, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.
In FIG. 2, 8A is connected to a pipe 7 via a connection tube 9 like the constant temperature water generator 8 of FIG. 1, and serves as a temperature control means for supplying a solvent whose temperature has been adjusted to a constant temperature to the pipe 7. (Not shown), which has a temperature controller therein. Reference numeral 10 denotes a thermocouple as a temperature detecting means attached to the outer wall of the shield 4, and its output side is connected to the constant temperature water generator 8A. As the thermocouple 10, for example, a K thermocouple (Chromel-Alumel thermocouple) is used.
[0017]
Next, the operation will be described.
The constant-temperature water generator 8A circulates constant-temperature water as a solvent into the pipe 7 via the connection tube 9 in the same manner as the constant-temperature water generator 8 in FIG. Then, in the present embodiment, the temperature of the shield 4 is detected by the thermocouple 10, data of the detected temperature of the shield 4 is taken into the constant temperature water generator 8A, and an internal temperature controller is used based on the temperature data. In order to control the temperature and suppress the temperature change of the shield, feedback control is performed so that the circulating solvent has an appropriate temperature. As a result, even if the temperature of the shield 4 changes due to the processing, the circulating solvent is always kept at an appropriate temperature.
[0018]
As described above, in the present embodiment, the shield temperature data from the thermocouple attached to the outer wall of the shield is taken into the constant temperature water generator, and the feedback control is performed. Since the temperature of the circulating solvent is always maintained at an appropriate temperature, precise temperature control of the shield can be performed, foreign substances can be prevented from coming off the shield, and product quality and yield can be improved.
[0019]
Embodiment 3 FIG.
3 shows a sputtering apparatus according to Embodiment 3 of the present invention. FIG. 3 (a) is a cross-sectional view thereof, and FIG. 3 (b) is an enlarged view of a portion A in FIG. 3 (a). It is. In FIGS. 3A and 3B, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.
3 (a) and 3 (b), reference numeral 11 denotes an inner member provided inside the shield 4 so as to form a substantially double structure with the shield 4. As shown in FIG. It has a fin-like shape, and a number of downward fins 11a are formed. As a material of the inner 11, for example, SUS316 is used. The inner 11 is substantially integrated with the shield 4 and has a hollow inside. A pipe 12 is attached to an upper portion on the outside of the shield 4, and an inert gas such as Ar or nitrogen is supplied from here.
[0020]
Next, the operation will be described.
The inert gas supplied from the pipe 12 passes through a gap between the shield 4 and the inner 11 and is jetted into the processing chamber 1 from between the fins 11 a of the inner 11. At this time, the inert gas is ejected downward along the inner 11 in the form of a fin, so that an effect substantially like an air curtain is obtained. Thereby, the metal film at the time of sputtering does not adhere to the inner 11, but is discharged from the lower portion together with the exhaust of the processing chamber, thereby suppressing generation of foreign matter.
[0021]
In this manner, in the present embodiment, a fin-shaped inner is provided inside the shield provided on the inner wall of the processing chamber to form a double structure with the shield, and the inert gas is supplied to the gap. Since the metal film does not adhere to the inner wall of the processing chamber at the time of sputtering by flowing and blowing downward from between the inner fins, generation of foreign substances can be suppressed, and product quality and yield can be improved. it can.
[0022]
【The invention's effect】
As described above, according to the present invention, the shield provided on the inner wall of the processing chamber, the target provided on the upper part of the processing chamber, and the stage provided on the lower part of the processing chamber, In a sputter processing apparatus that performs a sputter process by fixing a wafer on the stage, a pipe attached to an outer wall of the shield, and a temperature connected to the pipe, for controlling a temperature of the shield by flowing a solvent through the pipe. Since the control means is provided, there is an effect that foreign substances are prevented from peeling off due to heat shrinkage of the shield, and the quality and yield of the product can be improved.
[0023]
Further, according to the present invention, the temperature of the shield is feedback-controlled by the temperature control means based on the temperature detected by the temperature detection means. Temperature control can be performed, foreign substances are prevented from peeling off from the shield, and the quality and yield of products can be improved.
[0024]
Further, according to the present invention, since the thermocouple attached to the outer wall of the shield is used as the temperature detecting means, the temperature of the shield can be accurately detected, and a change in the temperature of the shield can be suppressed. There is an effect that it can contribute to improvement of product quality and yield by preventing peeling off.
[0025]
Further, according to the present invention, since the temperature control means has a temperature controller, even if the temperature of the shield changes due to processing, the circulating solvent is always kept at an appropriate temperature, and the temperature of the shield can be precisely controlled. There is an effect that can be performed.
[0026]
Further, according to the present invention, since the constant temperature water generator is used as the temperature control means, it is possible to accurately control the temperature of the shield and contribute to the improvement of the product quality and the yield.
[0027]
Further, according to the present invention, a shield provided on an inner wall of the processing chamber, a target provided on an upper part of the processing chamber, and a stage provided on a lower part of the processing chamber, wherein a wafer is provided on the stage A sputter processing apparatus for performing a sputter process by fixing the inner shield and the inner shield having a fin-like shape provided inside the shield so as to form a double structure. An inert gas is flowed into the gap, and the inert gas is blown downward from between the inner fins.Therefore, the metal film does not adhere to the inner wall of the processing chamber at the time of sputtering, and the generation of foreign substances is suppressed. There is an effect that quality and yield can be improved.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a sputter processing apparatus according to Embodiment 1 of the present invention.
FIG. 2 is a sectional view showing a sputtering apparatus according to Embodiment 2 of the present invention;
FIG. 3 is a sectional view showing a sputter processing apparatus according to Embodiment 3 of the present invention.
FIG. 4 is a cross-sectional view showing a conventional sputtering apparatus.
[Explanation of symbols]
1 processing room, 3 target, 4 shield, 5 stage, 6 wafer, 7,12 piping, 8,8A constant temperature water generator, 10 thermocouple, 11
inner.

Claims (6)

A shield provided on an inner wall of the processing chamber, a target provided on an upper part of the processing chamber, and a stage provided on a lower part of the processing chamber, and a wafer is fixed on the stage to perform a sputtering process. In the sputter processing equipment,
A sputter processing apparatus comprising: a pipe attached to an outer wall of the shield; and temperature control means connected to the pipe and controlling a temperature of the shield by flowing a solvent through the pipe. 2. The sputtering apparatus according to claim 1, further comprising temperature detecting means for detecting a temperature of the shield, wherein the temperature control means feedback-controls the temperature of the shield based on the temperature detected by the temperature detecting means. Processing equipment. 3. The sputter processing apparatus according to claim 2, wherein a thermocouple attached to an outer wall of the shield is used as the temperature detecting means. 4. The apparatus according to claim 2, wherein said temperature control means has a temperature controller for adjusting the temperature of said solvent. 5. The sputtering apparatus according to claim 1, wherein a constant temperature water generator is used as said temperature control means. A shield provided on an inner wall of the processing chamber, a target provided on an upper part of the processing chamber, and a stage provided on a lower part of the processing chamber, and a wafer is fixed on the stage to perform a sputtering process. In the sputter processing equipment,
An inner having a plurality of downward fins is provided inside the shield so as to form a double structure with the shield,
A sputter processing apparatus characterized in that an inert gas is caused to flow in a gap between the shield and the inner, and the inert gas is blown downward from between the fins of the inner.

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