JP2004067930A - Liquid encapsulation resin composition, semiconductor device using same and manufacturing process of the semiconductor device - Google Patents
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Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、信頼性に優れ、半導体装置の各部材に対する濡れ性が良好であり、かつ組み立て工程を簡略できる半導体封止用の液状樹脂組成物であり、液状樹脂組成物で封止された半導体装置及び半導体装置の製造方法に関するものである。
【0002】
【従来の技術】
近年半導体パッケージの軽薄短小化の技術革新は目覚しいものがあり、さまざまなパッケージ構造が提唱され、製品化されている。従来のリードフレーム接合に代わり、半田のような突起電極により、回路基板に接合するエリア実装方式は特に重要である。
【0003】
その中で半導体チップの回路面に直接突起電極が具備されたフリップチップはパッケージを最小化できる方法のひとつである。フリップチップ実装は、半田電極の場合、半田電極の表面の酸化膜を除去するためにフラックスで処理した後リフロー等の方法で接合する。その為半田電極、回路基板等の周囲にフラックスが残存し、不純物として問題となるためフラックスを除去する洗浄を行った後液状封止を行う。その理由としては、直接回路基板(マザーボード)に突起電極で接合するため、温度サイクル試験のような信頼性試験を行うと、チップと回路板の線膨張係数の差により電極接合部の電気的不良が発生するためである。
【0004】
液状樹脂による封止は、チップの一辺または複数面に液状封止樹脂を塗布し毛細管現象を利用して樹脂を回路板とチップの間隙に流れ込ませる。しかしこの方法はフラクッス処理、洗浄を行うため工程が長くなりかつ洗浄廃液の処理問題等環境管理を厳しくしなければならない。更に液状封止を毛細管現象で行うため封止時間が長くなり、生産性に問題があった。
【0005】
そこで直接回路基板に樹脂を塗布し、はんだ電極を持ったチップをその上から搭載し半田接合と樹脂封止を同時に行う方法が考案された(米国特許US 5,128,746)。この場合、半田を回路基板に接合させるために、熱硬化製樹脂、硬化剤からなる樹脂組成物にフラックス作用を有する成分を添加することが特徴である。しかし、フラックス作用を有する物質として、酸性度の強いカルボン酸が例示されており、封止樹脂に添加する場合はイオン性不純物または電気伝導性が増加する恐れがあり、特に吸湿処理したときの封止材料の絶縁性に問題を起こす可能性があった。
【0006】
上記問題点を解決するために、硬化剤とフラックス活性を同時に有する化合物を用いることによりフラックス活性物質を最終的に熱硬化マトリックスの中に取り込み、信頼性の高い半導体素子を得る方法が検討されている。その中で1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上のカルボン酸基を有する化合物はフラックス活性を有し、且つ硬化剤としての役割を示すことが見出されている(特開2001−106770号)。
【0007】
直接回路基板に樹脂を塗布し、はんだ電極を持ったチップをその上から搭載し半田接合と樹脂封止を同時に行う方法であると、封止樹脂は硬化前から半田接合のための高温炉にさらされる為、封止樹脂材料由来の揮発性ボイドや有機基板などからの揮発性ガスによるボイドが半導体装置内に残ったり、封止樹脂材料を受ける回路基板に、直接液状封止樹脂組成物を塗布し、電極が電気接合されるように回路基板と半導体チップとを位置合わせするという特徴的な組立方法から、巻き込みエアを内包してしまい、それがボイドとして残り信頼性を低下させてしまうという懸念点があった。
【0008】
【発明が解決しようとする課題】
本発明の課題は、液状樹脂組成物を用いて半導体チップ、特に回路面に突起電極を有する半導体チップを封止するエリア実装法において、従来と同様に電気絶縁性に優れ、封止時間が短く、また本液状樹脂材料組成物において、材料と半導体装置とのなじみ性を向上させ、巻き込みエアを発生しにくくすると共に、今まで困難であったボイドフリー化ができる樹脂組成物とその製造方法を提供することである。
【0009】
【課題を解決するための手段】
本発明は、
(1) (A)1分子あたり2個以上のエポキシ基を有するエポキシ樹脂、(B)フラックス作用を有し、1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上のカルボン酸基を有する化合物、(C)硬化促進剤及び(D)レベリング剤を有することを特徴とする液状封止樹脂組成物、
(2) フラックス作用を有し、1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上のカルボン酸基を有する化合物の最大粒径または最大長さが30μm以下である(1)項記載の液状樹脂組成物、
(3) 全エポキシ樹脂に対してレベリング剤を0.01部〜1部含んでなる(1)項記載の液状封止樹脂組成物、
(4) 液状封止樹脂組成物がエリア実装方式に使用される(1)項記載の液状封止樹脂組成物、
(5) (1)項に記載の液状封止樹脂組成物を用いて製造された半導体装置、
(6) 回路基板に、回路面に突起電極が具備された半導体チップを接合するエリア実装法において、回路基板または半導体チップの回路面(突起電極形成面)かつ又はこれを受ける回路基板に、(A)1分子あたり2個以上のエポキシ基を有するエポキシ樹脂、(B)フラックス作用を有し、1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上のカルボン酸基を有する化合物、(C)硬化促進剤及び(D)レベリング剤を有する液状封止樹脂組成物を塗布し、電極が電気接合されるように回路基板と半導体チップとを位置合わせしたのち、加熱することによって該突起電極と回路基板を電気的に接合し、樹脂を硬化させて製造することを特徴とする半導体装置の製造方法、
(7) (6)項に記載の半導体装置の製造方法を用いて製造された半導体装置である。
【0010】
【発明の実施の形態】
本発明を詳細に説明する。本発明で用いられるエポキシ樹脂は、1分子あたり2個以上のエポキシ基を有するエポキシ樹脂であれば特に制限なく用いることができる。例えば、既存のビスフェノール系ジグリシジルエーテル類、またそれらの水素添加反応により芳香環を飽和炭化水素化したもの、フェノールノボラックとエピクロールヒドリンとの反応で得られるグリシジルエーテルで常温で液状のもの等、またはそれらを混合したものが挙げられる。またこれらの液状樹脂にジヒドロキシナフタレンのジグリシジルエーテル、テトラメチルビフェノールのジグリシジルエーテル等の結晶性のエポキシ樹脂を混合し、液状にしたものを使用することもできる。
【0011】
次に本発明に用いられる1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上の芳香族カルボン酸を有する化合物の例としては、2,3−ジヒドロキシ安息香酸、2,4−ジヒドロキシ安息香酸、2,5−ジヒドロキシ安息香酸、2,6−ジヒドロキシ安息香酸、3,4−ジヒドロキシ安息香酸、没食子酸、1,4−ジヒドロキシ−2−ナフトエ酸、3,5−ジヒドロキシ−2−ナフトエ酸、フェノールフタリン、ジフェノール酸等がある。この硬化剤としての1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上の芳香族カルボン酸を有する化合物はフラックス作用があり、エリア実装方式の樹脂封止用のエポキシ樹脂の硬化剤として好ましい。
ここで、フラックス性とは通常用いられているようなフラックス剤と同様に、金属酸化膜を還元し、その酸化膜を除去しうる性質を示す。
【0012】
またこれらの1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上の芳香族カルボン酸を有する化合物はいずれも結晶性であり、その最大粒径または最大長さは特に制限されないが30μm以下であることが好ましい。上限値より大きいと結晶中に取り込まれた揮発分または結晶凝集物内に取り込まれた揮発分の量が多くなり、硬化中の急激な温度上昇により揮発分がボイドとなり、また、分散度が低下し、硬化物のむらが生成し、そこからひけを生じてしまう可能性があるからである。
【0013】
本発明で使用される1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上の芳香族カルボン酸を有する化合物のエポキシ樹脂に対する添加量は、エポキシ樹脂に対し5〜60重量%、好ましくは5〜50重量%である。この範囲を外れると、架橋密度が減少し、特に接着強度が低下するという問題が起こる。また添加量が多い場合はカルボン酸が遊離するおそれがあるので好ましくない。また該化合物は単独または複数添加する事もできる。
【0014】
本発明の効果を損なわない範囲で本発明の1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上の芳香族カルボン酸を有する化合物以外の硬化剤を添加することも可能である。その例としては、フェノールノボラック樹脂、オルソクレゾールノボラック樹脂等のフェノール樹脂、各種2官能以上のフェノール化合物、及びイミダゾール、ジアザ化合物、ヒドラジッド化合物、ジシアンジアミド等のアミン系化合物等が挙げられる。その添加量は全硬化剤中50重量%以下であることが好ましい。これを上回るとフラックスとしての効果が減少する。
【0015】
本発明で用いる硬化促進剤としては、一般的にエポキシ樹脂の硬化促進剤として用いられるものであり、例えば、イミダゾール類、リン化合物、ジアザ化合物、第三級アミン等をあげることができる。
【0016】
本発明で用いられるレベリング剤としては、ジエチルエーテル系シロキサン、ジプロピルエーテル系シロキサンなどのアルキル系シロキサン、アクリル系シロキサンなどが用いられる。本発明に用いられるレベリング材料としては全エポキシ樹脂に対し0.01部〜1部含むことが好ましい。0.01部以下であるとそのなじみ性を向上させるような効果が発現せず、1部を越えると揮発成分の増加やなじみ性に逆効果を与えるなどの懸念点が多いためである。
【0017】
本発明で樹脂組成物の特性を損なわない程度に、無機フィラーを用いることもできる。無機フィラーの例としては、例えば、炭酸カルシウム、シリカ、アルミナ、窒化アルミ等があげられる。用途によりこれらを複数混合してもよいが、信頼性、コストの点でシリカが好ましい。その添加量は特に制限がないが、 封止樹脂としての特性(耐湿性、作業性等)を保つため液状封止樹脂組成物の60重量%以下である。60重量%を超えると、接合の際、絶縁性のフィラーが半導体素子の突起電極と回路板電極との接合を妨げる可能性が極度に増加するからである。
【0018】
また無機フィラーの形状は球状であることが好ましい。いわゆる破砕型フィラーの場合はその鋭利な面により半導体素子表面の回路を破壊する恐れがあるからである。
無機フィラーの平均粒径としては特に制限されないが、0.1〜5μmが好ましい。下限値より小さいと無機フィラーの表面積が増加し,粘度が増加する恐れがあり、上限値より大きいと半導体素子の接合を妨げる恐れがある。
【0019】
本発明の液状封止樹脂組成物は、前記液状エポキシ樹脂、硬化剤、硬化促進剤、無機フィラー以外に、必要に応じて反応性希釈材、顔料、染料、消泡剤、カップリング材等の添加剤を混合し、真空脱泡することにより製造することができる。
【0020】
本発明の液状封止樹脂組成物を用いて、フリップチップ、CSP(チップ・サイズ・パッケージ)等の半導体素子を封止することが出来る。本発明の液状封止樹脂組成物ではフラックスを添加せず、例えば、直接回路基板に本発明の樹脂を塗布し、はんだ電極を持ったチップをその上から搭載して加熱硬化することにより半田接合と樹脂封止を同時に行うことが可能である。また、チップの上に本発明による樹脂を塗布し、回路基板の上に搭載して半田接合と樹脂封止を同時に行うことも可能である。
【0021】
本発明の半導体装置の製造方法は、回路基板に、回路面に突起電極が具備された半導体チップを接合するエリア実装法において、(1)回路基板または半導体チップの回路面(突起電極形成面)かつ又はこれを受ける回路基板に、上記に記載の液状封止樹脂組成物を塗布する工程、(2)電極が電気接合されるように回路基板と半導体チップとを位置合わせする工程、(3)加熱することによって該突起電極と回路基板を電気的に接合し、樹脂を硬化させる工程である。
【0022】
上記の液状封止樹脂組成物を塗布する方法は、ディスペンス法,印刷法等があり特に制限されない。樹脂を予備加熱する場合の条件は、40〜100℃、時間は1つのパッケージあたり1〜5分程度で搭載が行われる。電極の電気接合の為の加熱は,リフローやパルスヒート加熱,ホットプレートなどによる直接加熱のような方法等が挙げられ,特に制限されない。
半導体素子の製造及び半導体装置のその他の製造工程は従来の公知の方法を用いることが出来る。
【0023】
【実施例】
<実施例1−6、比較例1−3>
表1の処方に従って秤量し、ミキサーにて混練し、真空脱泡後、液状樹脂組成物を作製した。
【0024】
次に特性を把握するため以下の代用特性を評価した。
(1)常態粘度:25℃において東機産業(株)製E型粘度計で初期粘度(コーン回転数2.5rpm)及び25℃における0.5rpm/2.5rpmという比をチキソ比とした。
(2)ボイド評価:通常で使用されるプロセスを模倣する為に、ガラススライド上に適当量(フィラー系であれば20〜23mg,フィラーレス系であれば15〜17mg)液状樹脂組成物をディスペンスし、10X10mm□のバンプ(バンプ数900)付きチップを澁谷工業製フリップチップボンダーにてマウントした。その後、リフロー(ピーク215℃)を用いて接合状態と同じように熱履歴をかけた後、150℃/2hr後硬化した後、ボイドの発生具合を顕微鏡にて観察し(試験数10)、ボイドが発生したサンプルをカウントした。
(3)接触角:リードフレーム(80ピン銅)の上にそれぞれ材料組成物の液滴を滴下し,リードフレームとの接触角を測定することで、部材との濡れ性とした。
(4)半田バンプ接合率:住商化製品工業社製のバンプ付きチップ、また対となる厚み0.75mmの基板を用いて基板上に液状封止樹脂組成物を塗布し、澁谷工業社製フリップチップボンダーを用いて仮圧着させた。そのサンプルをピーク温度230℃、183℃以上の時間が60sec、トータル時間が300secのプロファイルを有するリフローに通してバンプの接合性をテスターにより観察し(試験数10)、接続不良数をカウントした。
【0025】
実施例に用いた原材料の内容は下記のとおりである。
・ビスフェノールF型エポキシ樹脂:粘度;2,000cps(室温)
・アリル化ビスフェノールA:粘度;1,000〜10,000cps(室温)
・ナフタレン骨格エポキシ樹脂:軟化点60℃
・1分子あたり少なくとも2個以上のフェノール性水酸基と1分子当たり少なくとも1個以上の芳香族カルボン酸を有する化合物:
2,5−ヒドロキシ安息香酸、フェノールフタリン
・硬化促進剤:ジアザビシクロウンデセン(DBU)
・レベリング剤:エレメンテス製,商品名ダブロS65、日本ユニカ製,商品名SILWET806
・球状シリカ:平均粒径:2μm、最大粒径:10μm
【0026】
【表1】
【0027】
表1に示したように、実施例1−4及び6では適当量のレベリング剤の添加により濡れ性が向上(接触角が低下)することで部材とのなじみ性が向上し、巻き込みエアなどのボイドを発生させることなくPKG化することが可能であった。また、これによりフェノール系硬化物に稀に見られるひけなどの現象が、部材とのなじみ性が向上することで発生しにくくなったことも原因の一つであると考えられる。
また,実施例5ではフィラー系であるため、接続性に若干の懸念点を残すものの、微小巻き込みエアと思われるボイドを含むサンプルもあったが、概ね良好な結果を示した。
一方、比較例1―3ではレベリング剤が含まれていない為に接触角が高く,部材とのなじみ性が劣り、巻き込みエアと思われるボイドを多く含んでしまったと考えられる。
以上の結果から、本樹脂系において、高熱プロセスを踏まえる本半導体装置の組立方においても、巻き込みエア、材料ひけなどのボイドを含むことなく良好な半導体装置の組立を達成できることが見いだされた。
【0028】
【発明の効果】
本発明に従うとエリア実装素子を回路基板に直接実装することができ、封止プロセスの短縮化とともに、ボイドフリー化の達成かつ良好な接続信頼性を与える封止樹脂を提供でき、パッケージとしての信頼性も向上する。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention is a liquid resin composition for semiconductor encapsulation which has excellent reliability, has good wettability to each member of a semiconductor device, and can simplify an assembling process, and a semiconductor encapsulated with the liquid resin composition. The present invention relates to a device and a method for manufacturing a semiconductor device.
[0002]
[Prior art]
2. Description of the Related Art In recent years, there has been a remarkable technological innovation to reduce the size and weight of semiconductor packages, and various package structures have been proposed and commercialized. It is particularly important to use an area mounting method of bonding to a circuit board by using a projecting electrode such as solder instead of the conventional lead frame bonding.
[0003]
Among them, a flip chip in which a protruding electrode is directly provided on a circuit surface of a semiconductor chip is one of methods for minimizing a package. In the flip chip mounting, in the case of a solder electrode, the solder electrode is treated with a flux to remove an oxide film on the surface of the solder electrode, and then joined by a method such as reflow. Therefore, the flux remains around the solder electrodes, the circuit board, and the like, and becomes a problem as an impurity. Therefore, the liquid is sealed after performing cleaning for removing the flux. The reason for this is that when a reliability test, such as a temperature cycle test, is performed to directly bond to a circuit board (motherboard) with a protruding electrode, an electrical defect at the electrode bonding portion occurs due to the difference in the linear expansion coefficient between the chip and the circuit board. Is caused.
[0004]
In sealing with a liquid resin, a liquid sealing resin is applied to one side or a plurality of surfaces of a chip, and the resin is caused to flow into a gap between the circuit board and the chip by using a capillary phenomenon. However, this method requires a long process due to the flux treatment and cleaning, and requires strict environmental management such as a problem of treating a cleaning waste liquid. Furthermore, since the liquid sealing is performed by the capillary phenomenon, the sealing time becomes longer, and there is a problem in productivity.
[0005]
Therefore, a method has been devised in which resin is directly applied to a circuit board, a chip having solder electrodes is mounted thereon, and solder bonding and resin sealing are performed simultaneously (US Pat. No. 5,128,746). In this case, in order to bond the solder to the circuit board, a characteristic feature is that a component having a flux action is added to a resin composition comprising a thermosetting resin and a curing agent. However, as a substance having a flux action, a carboxylic acid having a strong acidity is exemplified, and when added to a sealing resin, ionic impurities or electric conductivity may increase. There was a possibility of causing a problem in the insulating properties of the stop material.
[0006]
In order to solve the above problems, a method for obtaining a highly reliable semiconductor device by finally incorporating a flux active substance into a thermosetting matrix by using a compound having a curing agent and a flux activity at the same time has been studied. I have. Among them, compounds having at least two or more phenolic hydroxyl groups per molecule and at least one or more carboxylic acid groups per molecule have been found to have flux activity and to exhibit a role as a curing agent. (JP-A-2001-106770).
[0007]
In this method, the resin is directly applied to the circuit board, a chip with solder electrodes is mounted from above, and solder bonding and resin sealing are performed at the same time. Due to exposure, volatile voids derived from the sealing resin material or voids due to volatile gas from the organic substrate remain in the semiconductor device, or the liquid sealing resin composition is directly applied to the circuit board receiving the sealing resin material. The characteristic assembling method of applying and positioning the circuit board and the semiconductor chip so that the electrodes are electrically joined causes entrapment air to be included, which remains as a void and reduces reliability. There were concerns.
[0008]
[Problems to be solved by the invention]
An object of the present invention is to provide an area mounting method for sealing a semiconductor chip, particularly a semiconductor chip having a protruding electrode on a circuit surface, using a liquid resin composition. In addition, in the present liquid resin material composition, a resin composition capable of improving conformability between a material and a semiconductor device, making it difficult to generate entrained air, and achieving a void-free process, which has been difficult so far, and a method for producing the same. To provide.
[0009]
[Means for Solving the Problems]
The present invention
(1) (A) an epoxy resin having two or more epoxy groups per molecule, (B) having a flux action, having at least two or more phenolic hydroxyl groups per molecule, and having at least one carboxylic acid per molecule. A liquid sealing resin composition comprising a compound having an acid group, (C) a curing accelerator, and (D) a leveling agent;
(2) The compound having a flux action and having at least two or more phenolic hydroxyl groups per molecule and at least one or more carboxylic acid groups per molecule has a maximum particle size or a maximum length of 30 μm or less. The liquid resin composition according to the above item,
(3) The liquid sealing resin composition according to (1), wherein the liquid sealing resin composition comprises 0.01 to 1 part of a leveling agent with respect to all epoxy resins.
(4) The liquid sealing resin composition according to (1), wherein the liquid sealing resin composition is used in an area mounting method.
(5) A semiconductor device manufactured using the liquid sealing resin composition according to (1),
(6) In an area mounting method in which a semiconductor chip having a protruding electrode provided on a circuit surface is bonded to a circuit board, the circuit board or the circuit surface of the semiconductor chip (protrusion electrode forming surface) and / or the circuit board receiving the same are provided with ( A) an epoxy resin having two or more epoxy groups per molecule, (B) having a flux action and having at least two or more phenolic hydroxyl groups and one or more carboxylic acid groups per molecule. A liquid sealing resin composition having a compound, a (C) curing accelerator and a (D) leveling agent is applied, and the circuit board and the semiconductor chip are aligned so that the electrodes are electrically joined, and then heated. A method for manufacturing a semiconductor device, comprising: electrically bonding the projecting electrode to a circuit board; and curing and manufacturing the resin.
(7) A semiconductor device manufactured using the method for manufacturing a semiconductor device according to (6).
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
The present invention will be described in detail. The epoxy resin used in the present invention can be used without any particular limitation as long as it has two or more epoxy groups per molecule. For example, existing bisphenol-based diglycidyl ethers, those obtained by converting an aromatic ring into a saturated hydrocarbon by a hydrogenation reaction thereof, glycidyl ether obtained by a reaction between phenol novolak and epichlorohydrin, and liquid at room temperature, etc. Or a mixture thereof. Further, a liquid epoxy resin such as a diglycidyl ether of dihydroxynaphthalene or a diglycidyl ether of tetramethylbiphenol may be mixed with these liquid resins to make them liquid.
[0011]
Next, examples of the compound having at least two or more phenolic hydroxyl groups per molecule and at least one or more aromatic carboxylic acid per molecule used in the present invention include 2,3-dihydroxybenzoic acid, 2,4 -Dihydroxybenzoic acid, 2,5-dihydroxybenzoic acid, 2,6-dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid, 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2 -Naphthoic acid, phenolphthalin, diphenolic acid and the like. The compound having at least 2 or more phenolic hydroxyl groups per molecule and at least 1 or more aromatic carboxylic acid per molecule as a curing agent has a flux action, and is an epoxy resin for area-sealing type resin sealing. Preferred as a curing agent.
Here, the flux property refers to a property capable of reducing a metal oxide film and removing the oxide film, similarly to a flux agent usually used.
[0012]
All of these compounds having at least two or more phenolic hydroxyl groups per molecule and at least one or more aromatic carboxylic acid per molecule are crystalline, and the maximum particle size or the maximum length is not particularly limited. Is preferably 30 μm or less. If the value is larger than the upper limit, the amount of volatiles incorporated in the crystal or in the crystal aggregate increases, and the volatiles become voids due to a rapid rise in temperature during curing, and the degree of dispersion decreases. This is because there is a possibility that unevenness of the cured product is generated, and sink marks are generated therefrom.
[0013]
The amount of the compound having at least two or more phenolic hydroxyl groups per molecule and at least one or more aromatic carboxylic acid per molecule used in the present invention is 5 to 60% by weight based on the epoxy resin. , Preferably 5 to 50% by weight. Outside this range, there is a problem that the crosslink density decreases, and in particular, the adhesive strength decreases. If the amount is too large, the carboxylic acid may be released, which is not preferable. The compounds can be added alone or in combination.
[0014]
It is also possible to add a curing agent other than a compound having at least two or more phenolic hydroxyl groups per molecule and at least one or more aromatic carboxylic acid per molecule according to the present invention as long as the effects of the present invention are not impaired. is there. Examples thereof include phenol resins such as phenol novolak resins and orthocresol novolak resins, various bifunctional or higher phenol compounds, and amine compounds such as imidazole, diaza compounds, hydrazide compounds, and dicyandiamide. It is preferable that the addition amount is 50% by weight or less based on the whole curing agent. Above this, the effect as flux decreases.
[0015]
The curing accelerator used in the present invention is generally used as a curing accelerator for an epoxy resin, and examples thereof include imidazoles, phosphorus compounds, diaza compounds, and tertiary amines.
[0016]
As the leveling agent used in the present invention, an alkyl siloxane such as diethyl ether siloxane or dipropyl ether siloxane, an acrylic siloxane, or the like is used. The leveling material used in the present invention preferably contains 0.01 to 1 part of the total epoxy resin. If the amount is less than 0.01 part, the effect of improving the conformability is not exhibited, and if it exceeds 1 part, there are many concerns such as an increase in volatile components and an adverse effect on the conformability.
[0017]
In the present invention, an inorganic filler can be used to the extent that the properties of the resin composition are not impaired. Examples of the inorganic filler include, for example, calcium carbonate, silica, alumina, aluminum nitride and the like. A plurality of these may be mixed depending on the application, but silica is preferred in terms of reliability and cost. The amount of addition is not particularly limited, but is not more than 60% by weight of the liquid sealing resin composition in order to maintain characteristics (moisture resistance, workability, etc.) as the sealing resin. If the content exceeds 60% by weight, the possibility that the insulating filler will hinder the bonding between the protruding electrode of the semiconductor element and the circuit board electrode during bonding extremely increases.
[0018]
The shape of the inorganic filler is preferably spherical. This is because, in the case of a so-called crushable filler, the sharp surface may destroy the circuit on the surface of the semiconductor element.
The average particle size of the inorganic filler is not particularly limited, but is preferably from 0.1 to 5 μm. If it is smaller than the lower limit, the surface area of the inorganic filler may increase, and the viscosity may increase. If it is larger than the upper limit, bonding of the semiconductor element may be hindered.
[0019]
The liquid sealing resin composition of the present invention includes, in addition to the liquid epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, a reactive diluent, a pigment, a dye, a defoaming agent, a coupling material, and the like, if necessary. It can be produced by mixing additives and degassing in vacuum.
[0020]
Using the liquid sealing resin composition of the present invention, semiconductor elements such as flip chips and CSPs (chip size packages) can be sealed. In the liquid sealing resin composition of the present invention, without adding a flux, for example, the resin of the present invention is directly applied to a circuit board, and a chip having solder electrodes is mounted from above and heat-cured to perform solder bonding. And resin sealing can be performed simultaneously. It is also possible to apply the resin according to the present invention on a chip, mount it on a circuit board, and simultaneously perform solder joining and resin sealing.
[0021]
The method of manufacturing a semiconductor device according to the present invention is directed to an area mounting method for bonding a semiconductor chip having a protruding electrode on a circuit surface to a circuit board, wherein (1) a circuit surface of the circuit substrate or the semiconductor chip (protrusion electrode forming surface). And / or a step of applying the liquid sealing resin composition described above to a circuit board receiving the same, (2) a step of aligning the circuit board and the semiconductor chip such that the electrodes are electrically joined, and (3). In this step, the projecting electrodes and the circuit board are electrically joined by heating to cure the resin.
[0022]
The method for applying the above liquid sealing resin composition includes a dispensing method and a printing method, and is not particularly limited. The conditions for preheating the resin are 40 to 100 ° C., and the mounting time is about 1 to 5 minutes per package. Heating for electrical bonding of the electrodes includes, but is not particularly limited to, a method such as reflow, pulse heating, and direct heating using a hot plate.
A conventionally known method can be used for the manufacture of the semiconductor element and other manufacturing steps of the semiconductor device.
[0023]
【Example】
<Example 1-6, Comparative Example 1-3>
It was weighed according to the prescription in Table 1, kneaded with a mixer, vacuum degassed, and then a liquid resin composition was prepared.
[0024]
Next, the following substitute characteristics were evaluated in order to grasp the characteristics.
(1) Normal viscosity: The thixotropic ratio was defined as the initial viscosity (cone rotation speed: 2.5 rpm) at 25 ° C. with an E-type viscometer manufactured by Toki Sangyo Co., Ltd. and the ratio of 0.5 rpm / 2.5 rpm at 25 ° C.
(2) Void evaluation: dispensing an appropriate amount (20 to 23 mg for a filler system, 15 to 17 mg for a fillerless system) of a liquid resin composition on a glass slide to simulate a commonly used process. Then, a 10 × 10 mm square chip with bumps (900 bumps) was mounted using a flip chip bonder manufactured by Shibuya Kogyo. Then, after applying a heat history in the same manner as in the joined state using reflow (peak at 215 ° C.), after curing at 150 ° C. for 2 hours, the occurrence of voids was observed with a microscope (10 tests), and voids were observed. Samples in which occurred were counted.
(3) Contact angle: Droplets of the material composition were dropped on a lead frame (80-pin copper), and the contact angle with the lead frame was measured to determine the wettability with the member.
(4) Solder bump bonding ratio: A liquid sealing resin composition is applied on a substrate using a bumped chip manufactured by Sumisho Kagaku Kogyo Co., Ltd. and a paired substrate having a thickness of 0.75 mm, and a flip manufactured by Shibuya Kogyo Co., Ltd. Temporary pressure bonding was performed using a chip bonder. The sample was passed through a reflow having a profile of a peak temperature of 230 ° C. and a time of 183 ° C. or more for 60 seconds and a total time of 300 seconds, and the bonding property of the bumps was observed with a tester (10 tests), and the number of connection failures was counted.
[0025]
The contents of the raw materials used in the examples are as follows.
-Bisphenol F type epoxy resin: viscosity: 2,000 cps (room temperature)
-Allylated bisphenol A: viscosity: 1,000 to 10,000 cps (room temperature)
・ Naphthalene skeleton epoxy resin: Softening point 60 ℃
A compound having at least two or more phenolic hydroxyl groups per molecule and at least one or more aromatic carboxylic acid per molecule:
2,5-hydroxybenzoic acid, phenolphthaline, curing accelerator: diazabicycloundecene (DBU)
-Leveling agent: manufactured by Elementes, trade name: DABLO S65, manufactured by Nippon Yunika, trade name: SILWET806
・ Spherical silica: average particle size: 2 μm, maximum particle size: 10 μm
[0026]
[Table 1]
[0027]
As shown in Table 1, in Examples 1-4 and 6, the wettability is improved (the contact angle is reduced) by adding an appropriate amount of the leveling agent, so that the familiarity with the member is improved, and the entrainment air and the like are improved. It was possible to make PKG without generating voids. It is also considered that one of the causes is that phenomena such as sink marks, which are rarely seen in the phenol-based cured product, are less likely to occur due to the improvement of the compatibility with the member.
Further, in Example 5, although there were some concerns about the connectivity due to the filler system, there were some samples containing voids considered to be minute entangled air, but generally good results were shown.
On the other hand, in Comparative Examples 1-3, it is considered that the contact angle was high because the leveling agent was not included, the conformability with the member was poor, and many voids considered to be entrained air were included.
From the above results, it has been found that in the present resin system, even in the method of assembling the present semiconductor device based on the high heat process, it is possible to achieve good assembly of the semiconductor device without including voids such as entrapped air and material sink.
[0028]
【The invention's effect】
According to the present invention, an area mounting element can be directly mounted on a circuit board, shortening the sealing process, and providing a sealing resin that achieves void-free and provides good connection reliability. The performance is also improved.
Claims (7)
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Cited By (3)
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JP2005298677A (en) * | 2004-04-12 | 2005-10-27 | Hitachi Chem Co Ltd | Liquid sealing resin composition and electronic part device and method for producing the same |
JP2006008755A (en) * | 2004-06-23 | 2006-01-12 | Sumitomo Bakelite Co Ltd | Epoxy resin composition, semiconductor device using the same and method for assembling the device |
WO2009147828A1 (en) * | 2008-06-05 | 2009-12-10 | 住友ベークライト株式会社 | Manufacturing method for semiconductor device and semiconductor device |
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JP6785841B2 (en) | 2015-08-19 | 2020-11-18 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | Fluxing underfill composition |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005298677A (en) * | 2004-04-12 | 2005-10-27 | Hitachi Chem Co Ltd | Liquid sealing resin composition and electronic part device and method for producing the same |
JP4655501B2 (en) * | 2004-04-12 | 2011-03-23 | 日立化成工業株式会社 | Liquid encapsulating resin composition, electronic component device, and manufacturing method thereof |
JP2006008755A (en) * | 2004-06-23 | 2006-01-12 | Sumitomo Bakelite Co Ltd | Epoxy resin composition, semiconductor device using the same and method for assembling the device |
JP4729873B2 (en) * | 2004-06-23 | 2011-07-20 | 住友ベークライト株式会社 | Assembling method of semiconductor element |
WO2009147828A1 (en) * | 2008-06-05 | 2009-12-10 | 住友ベークライト株式会社 | Manufacturing method for semiconductor device and semiconductor device |
JP4862963B2 (en) * | 2008-06-05 | 2012-01-25 | 住友ベークライト株式会社 | Manufacturing method of semiconductor device |
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