JP2004056682A - Dielectric device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric device which is suitable for miniaturization and height reduction, and by which adjustment of resonance frequency and adjustment of transmission characteristics are easy. <P>SOLUTION: Resonance sections Q1, Q2 include through holes 41, 42 and non-through holes 51, 52. The through holes 41, 42 are provided on a dielectric substrate 1 and provided with first internal conductors 61, 62 inside. The non-through holes 51, 52 are provided on the dielectric substrate 1 at intervals from the through holes 41, 42, the bottom part of which is closed and provided with second internal conductors 81, 82 inside. The second internal conductors 81, 82 are consecutive to the first internal conductor 61 or 62 on a first surface 21 or a second surface 22. The non-through hole 51 of the resonances section Q1 has an aperture on the first surface 21 and the non-through hole 52 of the resonance section Q2 has an aperture on the second surface 22. <P>COPYRIGHT: (C)2004,JPO

Description

【００６２】
図７は表１のデータの理解の助けのために、表１に記載された中心周波数ｆｃ、第１の極ＰＫ１を生じる周波数、第２の極ＰＫ２を生じる周波数及び両極の周波数差（ＰＫ２−ＰＫ１）をグラフ化して示す図である。図７において、横軸に非貫通孔５１、５２の深さＨ２１、Ｈ２２をとり、左縦軸に第１の極ＰＫ１の周波数（ＭＨｚ）、第２の極ＰＫ２の周波数（ＭＨｚ）、中心周波数ｆｃをとり、右縦軸にＢＷ１０、周波数差（ｆｃ−ＰＫ１）の周波数（ＭＨｚ）をとってある。
【００６３】
図７を参照すると、中心周波数ｆｃ、第１の極ＰＫ１を生じる周波数及び第２の極ＰＫ２を生じる周波数は、非貫通孔５１、５２の深さＨ２１、Ｈ２２が浅くなるにつれて高くなり、深くなるにつれて低くなる。
【００６４】
周波数差（ｆｃ−ＰＫ１）及びバンド幅ＢＷ１０は、非貫通孔５１、５２の深さＨ２１、Ｈ２２が浅くなるにつれて大きくなり、深くなるにつれて小さくなる変化特性を示す。
【００６５】
また、図１〜図４に示した実施例の場合、共振部Ｑ１に備えられた非貫通孔５１の第２の内導体８１の底部と、共振部Ｑ２に備えられた非貫通孔５２の第２の内導体８２の底部とを、誘電体基体１を介して、互いに対向させる構造としてあるので、第１の共振部Ｑ１及び第２の共振部Ｑ２は、主として第１の共振部Ｑ１の非貫通孔５１と、第２の共振部Ｑ２の非貫通孔５２とが、容量結合する。したがって、第１の共振部Ｑ１及び第２の共振部Ｑ２の結合手段として、第１の面２１に導体パターンを形成する必要がなくなる。このため、誘電体装置の小型化が容易になる。また、導体パターン形成用スクリーン印刷工程は不要であるから、製造コストが安価になる。
【００６６】
更に、図１〜図４に示した実施例において、面付け実装のための第１の端子１１を、外面２５において、外導体３から、絶縁ギャップｇ２により、電気絶縁して設けられている。この構造によれば、第１の端子１１を、実装基板上に面付けすることが可能になる。第１の端子１１は非貫通孔５１と電気的に結合（容量結合）されている。
【００６７】
共振部Ｑ２においても同様であり、第２の端子１２は、外面２５の面上において、外導体３から絶縁ギャップｇ３により、電気絶縁して設けられている。このため、第２の端子１２を、実装基板上に面付けすることが可能になる。第２の端子１２は非貫通孔５２と電気的に結合（容量結合）されている。
【００６８】
次に、本発明に係る誘電体装置の様々な実施例について、添付された図８乃至図２９を参照して、順次に説明する。上述した添付図面において、先行図面に現れた構成部分と同一の構成部分については、同一の参照符号を付し、重複説明は省略する。
【００６９】
図８は本発明に係る誘電体フィルタの別の実施例を示す斜視図、図９は図８に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図、図１０は図８、図９に示した誘電体フィルタの正面断面図である。これらの図は、２つの共振部Ｑ１、Ｑ２を有する誘電体フィルタの例を示している。
【００７０】
図８〜図１０に示した実施例では、共振部Ｑ１の貫通孔４１と、共振部Ｑ２の貫通孔４２とが間隔を隔ててほぼ平行する関係で向き合っており、貫通孔４１の第１の内導体６１と貫通孔４２の第１の内導体６２とが電気的に結合（容量結合）し、この結合によって、共振部Ｑ１、Ｑ２が互いに電気的に結合されている。
【００７１】
この実施例の場合も、所定の共振波長を得るのに、誘電体基体１の第１の面２１からその第２の面２２までの高さＨ１を、非貫通孔５１の深さＨ２１と、非貫通孔５１から貫通孔４１からまでの間隔Ｄ１１との和（Ｈ２１＋Ｄ１１）の分だけ縮小できる。従って、誘電体基体１を低背化し、小型化することができる。
【００７２】
共振波長（λ／４）の誘電体フィルタの場合、和（Ｈ２１＋Ｄ１１）＝（λ／８）とすれば、誘電体基体１の第１の面２１からその第２の面２２までの高さＨ１も（λ／８）となり、その高さを、通常要求される（λ／４）から、（λ／８）へと半減できる。共振部Ｑ１と同じ構成を有する共振部Ｑ２においても同様である。
【００７３】
しかも、非貫通孔５１は、第２の面２２では開口せず、閉じており、非貫通孔５１と第２の面２２の外導体３との間には、非貫通孔５１の深さＨ２１と、誘電体基体１の高さＨ１との差分（Ｈ１ーＨ２１）に対応する厚さＨ３の誘電体基体１が存在する。従って、この誘電体基体１の厚さＨ３を利用して、非貫通孔５１の深さＨ２１を調整し、もって共振周波数を調整することができる。
【００７４】
次に、シミュレーションデータを挙げて、本発明の効果を具体的に説明する。図８〜図１０の実施例において、貫通孔４１、４２の長さＨ１を３ｍｍに固定し、非貫通孔５１、５２の深さ（高さ）Ｈ２１、Ｈ２２を、０．０２ｍｍ、０．２５ｍｍ、０．５ｍｍ、０．７５ｍｍ、１．００ｍｍ、１．２５ｍｍ、１．５０ｍｍ、２．００ｍｍ、２．５０ｍｍとした９個のサンプル２１〜２９について、周波数−伝送特性をシミュレーションによって求めた。
【００７５】
図１１は、上述したシミュレーションによって得られた周波数−伝送特性を示す図である。横軸に周波数（ＭＨｚ）を取り、縦軸に第１の共振部Ｑ１から第２の共振部Ｑ２への伝送特性であるＳ２１（ｄＢ）をとってある。
【００７６】
曲線Ｌ２１はＨ２１、Ｈ２２＝０．０２ｍｍとしたサンプル２１の周波数−伝送特性、曲線Ｌ２３はＨ２１、Ｈ２２＝０．５０ｍｍとしたサンプル２３の周波数−伝送特性、曲線Ｌ２５はＨ２１、Ｈ２２＝１．００ｍｍとしたサンプル２５の周波数−伝送特性、曲線Ｌ２７はＨ２１、Ｈ２２＝１．５０ｍｍとしたサンプル２７の周波数−伝送特性、曲線Ｌ２８はＨ２１、Ｈ２２＝２．００ｍｍとしたサンプル２８の周波数−伝送特性、曲線Ｌ２９はＨ２１、Ｈ２２＝２．５０ｍｍとしたサンプル２９の周波数−伝送特性をそれぞれ示している。
【００７７】
図１１に示すように、非貫通孔５１、５２の深さＨ２１、Ｈ２２が深くなるにつれて、周波数−伝送特性が低域側にシフトし、共振周波数が低下して行き、反対に、非貫通孔５１、５２の深さＨ２１、Ｈ２２が浅くなると、共振周波数が高くなる。即ち、非貫通孔５１、５２の深さＨ２１、Ｈ２２を調整することによって、周波数−伝送特性を変化させ、共振周波数を調整することができる。
【００７８】
次に、サンプル２１〜２９について、シミュレーションによって得られた１０ｄＢ降下のバンド幅ＢＷ１０を、表２に示す。バンド幅ＢＷ１０は、共振波形のピーク値から１０（ｄＢ）だけ低下した位置におけるバンド幅である。

【００７９】
図１２は表２に示されたデータをグラフ化して示す図である。図１２に示すように、バンド幅ＢＷ１０は、非貫通孔５１、５２の深さＨ２１、Ｈ２１が０．５０（ｍｍ）を超える領域では、深さＨ２１、Ｈ２１が浅くなるにつれて広くなり、０．５０（ｍｍ）よりも小さい領域では、深さＨ２１、Ｈ２１が浅くなるにつれて狭くなる。従って、貫通孔５１、５２の深さＨ２１、Ｈ２１を調整することによってバンド幅ＢＷ１０を調整することができる。
【００８０】
また、図８〜図１０に示した実施例の場合、共振部Ｑ１に備えられた貫通孔４１の第１の内導体６１と、共振部Ｑ２に備えられた貫通孔４２の第１の内導体６２とを、誘電体基体１を介して、互いに対向させる構造としてあるので、第１の共振部Ｑ１及び第２の共振部Ｑ２は、第１の共振部Ｑ１の貫通孔４１と、第２の共振部Ｑ２の貫通孔４２とが互いに容量結合する。したがって、第１の共振部Ｑ１及び第２の共振部Ｑ２の結合手段として、第１の面２１に導体パターンを形成する必要がなくなる。このため、小型化が容易になる。また、導体パターン形成用スクリーン印刷工程は不要であるから、製造コストが安価になる。
【００８１】
更に、図８〜図１０に示した実施例において、面付け実装のための第１の端子１１を、外面２５において、外導体３から、絶縁ギャップｇ２により、電気絶縁して設けられている。第１の端子１１は、誘電体基体１を介して、非貫通孔５１と電気的に結合する。この構造によれば、第１の端子１１を、実装基板上に面付けすることが可能になる。
【００８２】
共振部Ｑ２においても同様であり、第２の端子１２は、外面２５の面上において、外導体３から絶縁ギャップｇ３により、電気絶縁して設けられている。第２の端子１２は、誘電体基体１を介して、非貫通孔５２と電気的に結合する。このため、第２の端子１２を、実装基板上に面付けすることが可能になる。
【００８３】
図示は省略するが、共振部Ｑ１、Ｑ２は、第１の内導体と第２の内導体の電気的結合によって結合させてあってもよい。
【００８４】
図１３は本発明に係る誘電体フィルタの別の実施例を示す斜視図、図１４は図１３に示した誘電体フィルタを底面側から見た斜視図、図１５は図１３、図１４に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図、図１６は図１３〜図１５に示した誘電体フィルタの正面断面図である。
【００８５】
図１３〜図１６に示した実施例では、３つの共振部Ｑ１〜Ｑ３を誘電体基体１に一列に配置してある。中間部に位置する共振部Ｑ２は、非貫通孔５２、５３が２つである。非貫通孔５２、５３のそれぞれは、間隔を隔てて、誘電体基体１の第１の面２１に開口し、かつ、貫通孔４２の両側に備えられている。非貫通孔５２、５３のそれぞれに備えられた第２の内導体８２、８３は、導体９２によって、互いに連続するとともに、貫通孔４２の第１の内導体６２にも連続する。
【００８６】
共振部Ｑ２の一方側に位置する共振部Ｑ１は、貫通孔４１及び非貫通孔５１を有する。貫通孔４１は第１の内導体６１を備え、非貫通孔５１は第２の内導体８１を備える。非貫通孔５１は、第２の面２２に開口し、底部が共振部Ｑ２の非貫通孔５２の底部と対向している。従って、共振部Ｑ１と共振部Ｑ２とは、非貫通孔５１の内部に形成された第２の内導体８１と、非貫通孔５２の内部に形成された第２の内導体８２との間の容量結合により結合される。
【００８７】
共振部Ｑ２の他方側に位置する共振部Ｑ３は、貫通孔４３及び非貫通孔５４を有する。貫通孔４３は第１の内導体６３を備え、非貫通孔５４は第２の内導体８４を備える。非貫通孔５４は、第２の面２２に開口し、底部が共振部Ｑ２の非貫通孔５３の底部と対向している。従って、共振部Ｑ２と共振部Ｑ３とは、非貫通孔５３の内部に形成された第２の内導体８３と、非貫通孔５４の内部に形成された第２の内導体８４との間の容量結合により結合される。
【００８８】
図１７は図１３〜図１６に示した誘電体フィルタについて、シミュレーションによって得られた周波数ー伝送特性を示す図である。図において、横軸に周波数（ＭＨｚ）をとり、縦軸に共振部Ｑ１〜Ｑ３への伝送量Ｓ２１（ｄＢ）をとってある。
【００８９】
図１８は図１３〜図１６に示した誘電体フィルタについて、シミュレーションによって得られた周波数ー反射特性を示す図である。図において、横軸に周波数（ＭＨｚ）をとり、縦軸に反射量Ｓ１１（ｄＢ）をとってある。
【００９０】
図１９は本発明に係る誘電体フィルタの別の実施例を示す斜視図、図２０は図１９に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【００９１】
図１９及び図２０の実施例では、共振部Ｑ１及び共振部Ｑ２は横並びに配置されている。即ち、共振部Ｑ１の貫通孔４１及び共振部Ｑ２の貫通孔４２は、間隔を隔てて併設されており、共振部Ｑ１の非貫通孔５１及び共振部Ｑ２の非貫通孔５２は、間隔を隔てて併設されている。共振部Ｑ１の非貫通孔５１は、第１の面２１に開口し、共振部Ｑ２の非貫通孔５２は第２の面２２に開口する。
【００９２】
第１の端子１１は誘電体基体１の面２５に設けられ、誘電体基体１を介して、共振部Ｑ１の非貫通孔５１に設けられた第２の内導体８１と容量結合する。第２の端子１２も、誘電体基体１の面２５に設けられ、誘電体基体１を介して、共振部Ｑ２の非貫通孔５２に設けられた第２の内導体８２と容量結合する。
【００９３】
図２１は本発明に係る誘電体フィルタの別の実施例を示す斜視図、図２２は図２１に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【００９４】
図２１及び図２２に示した実施例では、共振部Ｑ１及び共振部Ｑ２は、貫通孔４１及び貫通孔４２の間隔が縮小され、または、非貫通孔５１及び非貫通孔５２の間隔が拡大される関係で、横並びに配置されている。即ち、共振部Ｑ１の貫通孔４１及び共振部Ｑ２の貫通孔４２の間の間隔は、共振部Ｑ１の非貫通孔５１及び共振部Ｑ２の非貫通孔５２の間の間隔よりも縮小されている。共振部Ｑ１の非貫通孔５１は、第１の面２１に開口し、共振部Ｑ２の非貫通孔５２は第２の面２２に開口する。
【００９５】
図２３は本発明に係る誘電体フィルタの別の実施例を示す斜視図、図２４は図２３に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【００９６】
図２３及び図２４に示した実施例では、共振部Ｑ１及び共振部Ｑ２は、非貫通孔５１及び非貫通孔５２の間隔が縮小され、または、貫通孔４１及び貫通孔４２の間隔が拡大される関係で、横並びに配置されている。即ち、共振部Ｑ１の非貫通孔５１及び共振部Ｑ２の非貫通孔５２の間の間隔は、共振部Ｑ１の貫通孔４１及び共振部Ｑ２の貫通孔４２の間の間隔よりも縮小されている。共振部Ｑ１の非貫通孔５１は、第１の面２１に開口し、共振部Ｑ２の非貫通孔５２は第２の面２２に開口する。
【００９７】
図２５は本発明に係る誘電体フィルタの別の実施例を示す斜視図、図２６は図２５に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【００９８】
図２５及び図２６に示した実施例では、共振部Ｑ１及び共振部Ｑ２は、非貫通孔５１及び非貫通孔５２の孔径が、貫通孔４１及び貫通孔４２の孔径よりも縮小されている。共振部Ｑ１の非貫通孔５１は、第１の面２１に開口し、共振部Ｑ２の非貫通孔５２は第２の面２２に開口する。また、図示はしないが、様々な孔径、孔形状をとることが可能である。
【００９９】
図２７は本発明に係る誘電体フィルタの別の実施例を示す斜視図である。この実施例では、貫通孔４１、４２の開口する位置に、段差△Ｈ１の凹部２７、２８を設けてある。凹部２７、２８は溝状であってもよい。この実施例は、貫通孔４１、４２の長さを変えることによって、周波数−伝達特性を調整できることを示している。第１の端子１１は側面２５及び側面２３に連続して形成されている。第２の端子１２は、側面２５から側面２４に連続して形成されている。
【０１００】
次に、本発明に係る誘電体装置のもう一つの重要な適用例であるデュプレクサについて説明する。
【０１０１】
図２８は本発明に係るデュプレクサの斜視図、図２９は図２９に示したデュプレクサを底面側からみた斜視図である。図示されたデュプレクサは５つの共振部Ｑ１〜Ｑ５を有する。共振部Ｑ１〜Ｑ５のそれぞれは、誘電体基体１を共用し、誘電体基体１を介して一体化されている。
【０１０２】
共振部Ｑ１〜Ｑ５の内、共振部Ｑ１は貫通孔４１と非貫通孔５１との組み合わせ、共振部Ｑ２は貫通孔４２と非貫通孔５２、５３との組み合わせ、共振部Ｑ３は貫通孔４３と非貫通孔５４、５５との組み合わせを、それぞれ含む。共振部Ｑ４は貫通孔４４と非貫通孔５６、５７との組み合わせ、共振部Ｑ５は貫通孔４５と非貫通孔５８との組み合わせを、それぞれ含む。
【０１０３】
共振部Ｑ１の非貫通孔５１、共振部Ｑ３の非貫通孔５４、５５、共振部Ｑ５の非貫通孔５８は、誘電体基体１の第１の面２１に開口し、共振部Ｑ２の非貫通孔５２、５３、共振部Ｑ４の非貫通孔５６、５７は、誘電体基体１の第２の面２２に開口する。
【０１０４】
共振部Ｑ１の非貫通孔５１と共振部Ｑ２の非貫通孔５２とは、底部が、誘電体基体１を介して対向し、容量結合している。共振部Ｑ２の非貫通孔５３と共振部Ｑ３の非貫通孔５４とは、底部が、誘電体基体１を介して対向し、容量結合している。共振部Ｑ３の非貫通孔５５と共振部Ｑ４の非貫通孔５６とは、底部が、誘電体基体１を介して対向し、容量結合している。共振部Ｑ４の非貫通孔５７と共振部Ｑ５の非貫通孔５８とは、底部が、誘電体基体１を介して対向し、容量結合している。
【０１０５】
貫通孔（４１〜４５）と非貫通孔（５１〜５８）の構造、及び、相対関係の詳細は、図１〜図２７を参照して説明した通りである。
【０１０６】
誘電体基体１の側面２５には、第１の端子１１、第２の端子１２及び第３の端子１３が備えられている。第１の端子１１は、外導体３からギャップｇ２を隔てて分離され、共振部Ｑ１の非貫通孔５１と電気的に結合（容量結合）されている。第２の端子１２は、外導体３からギャップｇ３を隔てて分離され、共振部Ｑ３の貫通孔４３と電気的に結合（容量結合）されている。第３の端子１３は、外導体３からギャップｇ４を隔てて分離され、共振部Ｑ５の非貫通孔５８と電気的に結合（容量結合）されている。
【０１０７】
デュプレクサは、アンテナ共用器として用いられるので、共振部Ｑ１〜Ｑ５は、送信用及び受信用の２つに分けられる。図２８、図２９において、第１の端子１１が受信用入力端子として用いられ、第２の端子１２が共通端子として用いられ、第３の端子１３が送信用出力端子として用いられるとすると、図２８、図２９において、第２の端子１２よりも左側が受信用共振部を構成し、右側が送信用共振部を構成する。
【０１０８】
上記構成によれば、貫通孔４１〜４５、非貫通孔５１〜５８の深さ、及び、共振部Ｑ１〜Ｑ５のそれぞれにおける孔間隔を調整することによって共振波長を調整し、共振周波数を所定値に高精度であわせ込むことができること、小型化及び低背化が実現できること、及び、伝送特性を容易に調整できることは、図１〜図２７に示した誘電体フィルタの説明において、詳細に論じたとおりである。
【０１０９】
図示は省略するが、デュプレクサについても、誘電体フィルタで例示した各種の構造（図１乃至図２７参照）を適用することができることは勿論である。
【０１１０】
【発明の効果】
以上述べたように、本発明によれば、次のような効果を得ることができる。
（ａ）小型化及び低背化に適した誘電体装置を提供することができる。
（ｂ）共振周波数の調整の容易な誘電体装置を提供することができる。
（ｃ）伝送特性の調整の容易な誘電体装置を提供することができる。
【図面の簡単な説明】
【図１】本発明に係る誘電体フィルタの斜視図である。
【図２】図１に示した誘電体フィルタを底面側から見た斜視図である。
【図３】図１及び図２に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図４】図１〜図３に示した誘電体フィルタの正面断面図である。
【図５】図１乃至図４に示した誘電体フィルタの共振器長と共振周波数との関係を示す図である。
【図６】シミュレーションによって得られた周波数−伝送特性を示す図である。
【図７】表１に記載された中心周波数ｆｃ、第１の極ＰＫ１を生じる周波数、第２の極ＰＫ２を生じる周波数及び両極の周波数差（ＰＫ２−ＰＫ１）をグラフ化して示す図である。
【図８】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図９】図８に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図１０】図８、図９に示した誘電体フィルタの正面断面図である。
【図１１】シミュレーションによって得られた周波数−伝送特性を示す図である。
【図１２】図１２は表２に示されたデータをグラフ化して示す図である。
【図１３】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図１４】図１３に示した誘電体フィルタを底面側から見た斜視図である。
【図１５】図１３、図１４に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図１６】図１３〜図１５に示した誘電体フィルタの正面断面図である。
【図１７】図１３〜図１６に示した誘電体フィルタについて、シミュレーションによって得られた周波数ー伝送特性を示す図である。
【図１８】図１３〜図１６に示した誘電体フィルタについて、シミュレーションによって得られた周波数ー反射特性を示す図である。
【図１９】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図２０】図１９に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図２１】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図２２】図２１に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図２３】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図２４】図２３に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図２５】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図２６】図２５に示した誘電体フィルタの貫通孔、第１の内導体、非貫通孔及び第２の内導体の構成を示す透視図である。
【図２７】本発明に係る誘電体フィルタの別の実施例を示す斜視図である。
【図２８】本発明に係るデュプレクサの斜視図である。
【図２９】図２８に示したデュプレクサを底面側からみた斜視図である。
【符号の説明】
１　　　　　　　　誘電体基体
２１　　　　　　　第１の面
２２　　　　　　　第２の面
３　　　　　　　　外導体
４１〜４５　　　　貫通孔
５１〜５８　　　　非貫通孔[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a dielectric device that widely covers a dielectric filter, a duplexer, and the like.
[0002]
[Prior art]
This type of dielectric device is used in a high-frequency region such as a quasi-microwave band, a microwave band, a millimeter wave band, or a submillimeter wave band. More specific application examples include satellite communication equipment, mobile communication equipment, wireless communication equipment, high-frequency communication equipment, base stations for these communication equipment, and the like.
[0003]
In a conventional dielectric device of this type, taking a dielectric filter as a typical example, a ceramic dielectric is used in common to form a plurality of resonators, and the resonators are capacitively or inductively coupled. A predetermined frequency component is extracted by coupling between stages. The ceramic dielectric is shared by the plurality of resonators, and most of the outer surface except the first surface is covered with the conductor.
[0004]
Each of the resonance units has a through hole penetrating from the first surface to a second surface facing the first surface. The height from the first surface to the second surface of the ceramic is generally selected to be (λ / 4), where λ is the selected center frequency wavelength, and thus the through hole is also about (λ). / 4).
[0005]
However, satellite communication equipment, mobile communication equipment, wireless communication equipment and high-frequency communication equipment in which this type of device is used have strong demands for reduction in height, size and weight, and the first ceramic dielectric material has been required. The prior art in which the height from the surface to the second surface is set on the basis of (λ / 4) cannot meet this demand.
[0006]
Japanese Patent Publication No. Hei 7-32321 is known as a prior art document for miniaturizing a dielectric filter. The dielectric filter disclosed in this known document conceptually includes a ceramic dielectric having a height of about (λ / 4) at a position (λ / 8) which is half of (λ / 4). The two halves obtained by cutting are arranged in parallel in such a manner that the cut surfaces are on the same side, and furthermore, the cut through surface is made so that the through conductor divided into two is continuous. You can think.
[0007]
However, in the case of this conventional technique, there is a problem that the adjustment of the resonance frequency is difficult because the through conductor that determines the resonance wavelength matches the height of the ceramic dielectric and is fixed to the dimension.
[0008]
[Problems to be solved by the invention]
An object of the present invention is to provide a dielectric device suitable for miniaturization and reduction in height.
[0009]
Another object of the present invention is to provide a dielectric device whose resonance frequency can be easily adjusted.
[0010]
Still another object of the present invention is to provide a dielectric device whose transmission characteristics can be easily adjusted.
[0011]
[Means for Solving the Problems]
In order to solve the above-described problems, a dielectric device according to the present invention includes a dielectric substrate and a plurality of resonance units. The dielectric substrate has an outer conductor covering an outer surface, and the outer surface includes a first surface and a second surface facing each other.
[0012]
Each of the resonance units includes a through hole and a non-through hole. The through-hole is provided in the dielectric substrate, is opened on the first and second surfaces, and has a first inner conductor therein.
[0013]
The non-through-hole is provided in the dielectric base at an interval from the through-hole, is open on one of the first and second surfaces, is closed at the bottom, and has a second inner portion therein. A conductor, wherein the second inner conductor is continuous with the first inner conductor on one of the first and second surfaces.
[0014]
The plurality of resonating units include a unit in which the non-through hole opens on the first surface and a unit in which the non-through hole opens on the second surface.
[0015]
As described above, in the dielectric device according to the present invention, each of the plurality of resonance units includes the through-hole and the non-through-hole, and the through-hole includes the first inner conductor, An opening is provided in the first surface and the second surface of the base. The non-through-hole is provided in the dielectric substrate at a distance from the through-hole, is open on one of the first and second surfaces, is closed at the bottom, and has a second inner conductor therein. Prepare. The second inner conductor is continuous with the first inner conductor on one of the first and second surfaces.
[0016]
Therefore, in the dielectric device according to the present invention, in each of the resonating portions, the resonator length that determines the resonance wavelength corresponds to the height of the through conductor corresponding to the height from the first surface to the second surface of the dielectric substrate. It is the sum of the length, the depth (height) of the non-through hole, and the distance from the non-through hole to the through hole. This means that when a predetermined resonance wavelength is obtained, the height from the first surface to the second surface of the dielectric substrate is determined by the depth of the non-through hole and the distance from the non-through hole to the through hole. The sum can be reduced by the sum, which means that the dielectric substrate can be reduced in size and height. As a specific example, when the resonance wavelength is (λ / 4), the height can be halved from the normally required (λ / 4) to (λ / 8).
[0017]
Moreover, the non-through hole is closed, and a layer of the dielectric substrate exists below the bottom of the non-through hole. Therefore, it is possible to adjust the depth of the non-through hole by using the layer of the dielectric substrate, thereby adjusting the resonance frequency. Since the non-through holes are arranged at intervals from the through holes, the resonance frequency can be adjusted also by adjusting the intervals.
[0018]
In addition, the plurality of resonating portions include those in which a non-through hole opens on the first surface and those in which the non-through hole opens on the second surface. Therefore, the resonance frequency of each resonating part can be adjusted by adjusting the depth of the non-through hole based on the first surface and adjusting the depth of the non-through hole based on the second surface. . For this reason, the resonance frequencies of the individual resonance units can be easily adjusted.
[0019]
In addition, since the plurality of resonating portions include those in which the non-through hole opens on the first surface and those in which the non-through hole opens on the second surface, the transmission characteristics between the resonating portions can be easily widened. Can be adjusted.
[0020]
For example, at least one set of adjacent resonating portions among the plurality of resonating portions is electrically coupled between the second inner conductor and the second inner conductor, and electrically connected between the first inner conductor and the first inner conductor. The coupling can be performed by coupling or the electric coupling between the first inner conductor and the second inner conductor, and the transmission characteristics between the resonance units can be adjusted according to the coupling mode.
[0021]
As a specific mode, one of the adjacent resonating portions of the plurality of resonating portions has a configuration in which a non-through hole opens on the first surface, and the other has a non-through hole opening on the second surface. be able to. That is, in the adjacent resonance part, the non-through hole is opened in the opposite direction. In this case, the adjacent resonance portions are electrically coupled by the second inner conductor provided in each of the non-through holes, thereby utilizing the thickness of the dielectric substrate existing between the non-through holes. , The transmission characteristics between the resonance units can be adjusted.
[0022]
More specifically, the structure is such that the bottoms of the second inner conductors of the non-through holes provided in the adjacent resonating portions are opposed to each other via a dielectric substrate, and the depth of the non-through holes is adjusted. By adjusting the thickness of the dielectric substrate between the second inner conductors in the through hole, the transmission characteristics between the adjacent resonance parts can be adjusted.
[0023]
As another mode, adjacent resonance parts may be electrically connected by the first inner conductor in the through-hole.
[0024]
As yet another aspect, at least one of the plurality of resonance units may have a plurality of non-through holes. Each of the plurality of non-through holes is provided at an interval. The second inner conductor provided in each of the plurality of non-through holes is continuous with each other. As a matter of course, the second inner conductor is also connected to the first inner conductor provided in the through hole.
[0025]
As a basic configuration of this type of dielectric device, the first and second surfaces have a covered region covered by an outer conductor and an uncovered region not covered by the outer conductor. The through hole is open in the uncovered area on one of the first and second surfaces, and is open in the covered area on the other, and the first inner conductor is continuous with the outer conductor in the covered area. The non-through hole is opened in an uncovered region on one of the first and second surfaces, and the second inner conductor is connected to the first inner conductor in the uncovered region.
[0026]
The dielectric device according to the present invention can be used as a device that widely covers a dielectric filter or a duplexer (also referred to as a duplexer or an antenna duplexer).
[0027]
When used as a dielectric filter, a first terminal and a second terminal are provided, and these are used as input / output terminals. The first terminal is provided at a position opposed to a non-through hole provided in one of the resonance units via a dielectric substrate. The second terminal is provided at a position opposed to a non-through hole provided in another resonance portion via a dielectric substrate. Both the first and second terminals are insulated from the outer conductor.
[0028]
According to the above configuration, the first and second terminals can be imposed on the mounting board. The first and second terminals may be provided on the second surface, or may be provided on the side surface of the dielectric substrate excluding the first surface and the second surface. Further, the first and second terminals may be provided so as to be capacitively coupled to the first inner conductor.
[0029]
When used for a duplexer (antenna sharing device), at least three resonance sections and first to third terminals are provided. The first to third terminals are provided for each of the different resonance units, and are used as an antenna connection terminal, a reception terminal, and a transmission terminal.
[0030]
According to the above configuration, the first to third terminals can be imposed on the mounting board. The first to third terminals may be provided on the second surface, or may be provided on the side surface of the dielectric substrate excluding the first surface and the second surface.
[0031]
Other objects, configurations and advantages of the present invention will be described in more detail with reference to the accompanying drawings. However, it goes without saying that the technical scope of the present invention is not limited to these illustrated embodiments.
[0032]
BEST MODE FOR CARRYING OUT THE INVENTION
1 is a perspective view of a dielectric filter according to the present invention, FIG. 2 is a perspective view of the dielectric filter shown in FIG. 1 as viewed from the bottom side, and FIG. 3 is a through-hole of the dielectric filter shown in FIGS. FIG. 4 is a perspective view showing the configuration of the hole, the first inner conductor, the non-through hole, and the second inner conductor. FIG. 4 is a front sectional view of the dielectric filter shown in FIGS. These figures show examples of a dielectric filter having two resonance parts Q1 and Q2.
[0033]
Each of the resonance sections Q1 and Q2 shares the dielectric substrate 1 and is integrated via the dielectric substrate 1. The dielectric substrate 1 is made of a well-known dielectric ceramic, and is formed of a first surface (front surface) 21, a second surface (bottom surface) 22, and four side surfaces 23 to 26. It is formed in a planar shape. An outer conductor 3 is attached to the outer surface of the dielectric substrate 1. The outer conductor 3 generally has copper or silver as a main component and is formed by means such as baking or plating.
[0034]
The resonance section Q1 includes a through hole 41 and a non-through hole 51. The through-hole 41 extends from the first surface 21 to the second surface 22 and opens to the first surface 21 and the second surface 22. Inside the through-hole 41, a first inner conductor 61 which is continuous with the outer conductor 3 on the second surface 22 is provided. The first inner conductor 61 is configured by a conductor attached to the inner surface of the through hole 41. The first inner conductor 61 is formed of the same material and means as the outer conductor 3.
[0035]
The non-through-hole 51 is disposed substantially parallel to the through-hole 41 at a distance D11 (see FIG. 4) from the through-hole 41. The non-through hole 51 extends from the first surface 21 to the second surface 22 and opens only at the first surface 21. The non-through hole 51 is closed on the side of the second surface 22 facing the first surface 21 and has a depth H21 from the first surface 21.
[0036]
The non-through hole 51 has a second inner conductor 81. The second inner conductor 81 is connected to the first inner conductor 61 by the conductor 91 on the first surface 21. The second inner conductor 81 is constituted by a conductor attached to the inner surface of the non-through hole 51. The second inner conductor 81 is formed of the same material and means as the first inner conductor 61.
[0037]
The resonance section Q2 includes a through hole 42 and a non-through hole 52. The through hole 42 extends from the first surface 21 to the second surface 22 and opens to the first surface 21 and the second surface 22. Inside the through-hole 42, a first inner conductor 62 that is continuous with the outer conductor 3 on the first surface 21 is provided. The first inner conductor 62 is configured by a conductor attached to the inner surface of the through hole 42.
[0038]
The non-through-hole 52 is disposed substantially parallel to the through-hole 42 at a distance D12 (see FIG. 4) from the through-hole 42. The non-through hole 52 extends from the second surface 22 to the first surface 21 and opens only at the second surface 22. The non-through hole 52 is closed on the side of the first surface 21 and has a depth H22 from the second surface 22. The depth H22 of the non-through-hole 52 may be equal to, shorter or longer than the depth H21 of the non-through-hole 51 of the resonance part Q1.
[0039]
The non-through hole 52 has a second inner conductor 82. The second inner conductor 82 is connected to the first inner conductor 62 by a conductor 92 on the second surface 22. The second inner conductor 82 is constituted by a conductor attached to the inner surface of the non-through hole 52.
[0040]
The first and second surfaces 21 and 22 have a covered area covered by the outer conductor 3 and an uncovered area not covered by the outer conductor 3. The through hole 41 opens in the uncovered area on the first surface 21, and opens in the covered area on the second surface 22. The first inner conductor 61 provided inside the through-hole 41 is continuous with the outer conductor 3 in a covering area of the second surface 22. The non-through hole 51 is opened in the uncovered area of the first surface 21, and the second inner conductor 61 inside thereof is connected to the first inner conductor 61 by the conductor 91 in the uncovered area. .
[0041]
Similarly, the through hole 42 opens in the uncovered area on the second surface 22, opens in the covered area on the first face 21, and connects the first inner conductor 62 to the outer conductor 3 in the covered area. is there. The non-through hole 52 opens at an uncovered area of the second surface 22. The second inner conductor 82 of the non-through hole 52 is connected to the first inner conductor 62 by a conductor 92 in an uncovered area of the second surface 22.
[0042]
In the embodiment, furthermore, after the resonance portions Q1 and Q2 are adjacent to each other, the bottom of the second inner conductor 81 of the non-through-hole 51 and the bottom of the second inner conductor 82 of the non-through-hole 52 have the same thickness. H3 (see FIG. 4) has a structure in which they are opposed to each other via a dielectric substrate 1.
[0043]
In addition, a first terminal 11 and a second terminal 12 serving as input / output terminals are provided on a side surface 25 of the dielectric substrate 1. The first terminal 11 is provided at a position facing the non-through hole 51 via the dielectric substrate 1 and is electrically insulated from the outer conductor 3 by the insulating gap g2.
[0044]
The second terminal 12 is provided at a position facing the non-through hole 52 via the dielectric substrate 1 and is electrically insulated from the outer conductor 3 by an insulating gap g3. The first and second terminals 11 and 12 do not need to overlap the inner conductors 81 and 82 of the non-through holes 51 and 52. It may be provided at a position facing partly or not facing. Further, the insulating gaps g2 and g3 may be continuous as one gap.
[0045]
Next, the operation and effect of the dielectric filters shown in FIGS. 1 to 4 will be described with reference to the resonance part Q1 when the resonance parts are individually viewed. The resonance section Q2 has the same structure as the resonance section Q1, and the description of the resonance section Q1 applies as it is.
[0046]
As described above, in the resonance portion Q1, the through-hole 41 extends from the first surface 21 of the dielectric substrate 1 to the second surface 22 thereof, and opens to the first surface 21 and the second surface 22. . The through hole 41 has a first inner conductor 61 that is continuous with the outer conductor 3 on the second surface 22. The non-through hole 51 extends from the first surface 21 to the second surface 22 at a distance D11 from the through hole 41. The non-through hole 51 of the resonance part Q1 includes a second inner conductor 81, and the second inner conductor 81 is continuous with the first inner conductor 61 of the through hole 41 on the first surface 21. I have.
[0047]
Therefore, in the resonance part Q1, the resonator length that determines the resonance wavelength is the length H1 of the through hole 41 corresponding to the height from the first surface 21 of the dielectric substrate 1 to the second surface 22 thereof, and The sum (H1 + H21 + D11) of the depth (height) H21 of the non-through hole 51 from the first surface 21 to the second surface 22 thereof and the distance D11 from the non-through hole 51 to the through hole 41.
[0048]
This means that in order to obtain a predetermined resonance wavelength, the height H1 from the first surface 21 of the dielectric substrate 1 to the second surface 22 thereof is determined by the depth H21 of the non-through hole 51 and the non-through hole This means that it can be reduced by the sum (H21 + D11) of the distance D11 from 51 to the through hole 41. Therefore, the height and the size of the dielectric substrate 1 can be reduced.
[0049]
As a specific example, in the case of a dielectric filter having a resonance wavelength (λ / 4), if the sum (H21 + D11) = (λ / 8), from the first surface 21 of the dielectric substrate 1 to its second surface 22 Is also (λ / 8), and the height can be halved from the normally required (λ / 4) to (λ / 8). The same applies to the resonance section Q2 having the same configuration as the resonance section Q1.
[0050]
FIG. 5 is a diagram showing the relationship between the resonator length and the resonance frequency. In the figure, the horizontal axis indicates the resonator length (H1 + H21 + D11), and the vertical axis indicates the resonance frequency. As shown in FIG. 5, when the depth H21 of the non-through hole 51 is changed in the range of H21 = 0 to H21 = H1, the resonance frequency changes linearly. Therefore, the resonance frequency can be adjusted by changing the depth H21 of the non-through hole 51.
[0051]
Since the non-through-hole 51 is arranged at a distance D11 from the through-hole 41, the resonance frequency can also be adjusted by adjusting the distance D11.
[0052]
The same applies to the resonance section Q2. In the resonance part Q2, in order to obtain a predetermined resonance wavelength, the height H1 from the second surface 22 to the first surface 21 of the dielectric substrate 1 is set to the depth H22 of the non-through hole 52 and the non-through hole It is possible to reduce the distance by the sum (H22 + D12) of the distance D12 from the hole 52 to the through hole 42, thereby reducing the height and the size of the dielectric substrate 1.
[0053]
As described above, in each of the resonance units Q1 and Q2, the above-described frequency adjustment can be individually performed, so that the adjustment of the resonance frequency is facilitated.
[0054]
The above is the operation and effect when the resonance sections Q1 and Q2 are individually considered. According to the present invention, an excellent operation and effect regarding the transmission characteristics between the resonance sections Q1 and Q2 can be obtained. . Next, this point will be described.
[0055]
In the embodiment illustrated in FIGS. 1 to 4, of the resonance portions Q1 and Q2, the resonance portion Q1 has the non-through hole 51 opened in the first surface 21 and the resonance portion Q2 has the non-through hole 52 The second surface 22 is opened. That is, in the adjacent resonance portions Q1 and Q, the non-through holes 51 and 52 open in opposite directions. According to this structure, the resonance portions Q1 and Q2 are electrically coupled by the second inner conductors 81 and 82 provided inside the respective non-through holes 51 and 52, so that the non-through holes 51 and 52 are formed. The transmission characteristics between the resonance parts Q1 and Q2 can be adjusted by utilizing the thickness of the dielectric substrate 1 existing therebetween.
[0056]
In the case of the embodiment, the bottom of the second inner conductor 81 of the non-through hole 51 provided in the resonance part Q1 and the bottom of the second inner conductor 82 of the non-through hole 52 provided in the resonance part Q2 are: Since the structure is made to oppose each other via the dielectric substrate 1, the depth H21 or H22 of the non-through hole 51 or the non-through hole 52 is adjusted, and the second inner conductors 81 to 82 of the non-through holes 51 and 52 are adjusted. By adjusting the thickness H3 of the dielectric substrate 1 between them, it is possible to adjust the transmission characteristics between the adjacent resonance parts Q1 and Q2.
[0057]
Next, the effects of the present invention will be specifically described with reference to simulation data. FIG. 6 is a diagram showing frequency-transmission characteristics obtained by simulation. The horizontal axis represents frequency (MHz), and the vertical axis represents S21 (dB) which is a transmission characteristic from the first terminal 11 to the second terminal 12.
[0058]
In the structure shown in FIGS. 1 to 4, the length H1 of the through holes 41 and 42 is fixed to 3 mm, and the depths (heights) H21 and H22 of the non-through holes 51 and 52 are set to 0.02 mm, 0. Frequency-transmission characteristics of five samples 1 to 5 of 25 mm, 0.5 mm, 0.75 mm, and 1.00 mm were determined by simulation.
[0059]
Curve L1 is the frequency-transmission characteristic of sample 1 where H21 and H22 = 0.02 mm, curve L3 is the frequency-transmission characteristic of sample 3 where H21 and H22 = 0.50 mm, and curve L5 is H21 and H22 = 1.00 mm. The frequency-transmission characteristics of Sample 5 are shown.
[0060]
As shown in FIG. 6, as the depths H21 and H22 of the non-through holes 51 and 52 increase, the frequency-transmission characteristic shifts to a lower frequency side, and the resonance frequency decreases. When the depths H21 and H22 of the portions 51 and 52 are shallow, the resonance frequency increases. That is, by adjusting the depths H21 and H22 of the non-through holes 51 and 52, the frequency-transmission characteristics can be changed and the resonance frequency can be adjusted. In FIG. 6, the first pole PK1 corresponds to the attenuation pole on the lower side of the pass band, and the second pole PK2 corresponds to the attenuation pole on the lower side.
[0061]
Next, for samples 1 to 5, the center frequency fc of the pass band obtained by simulation, the frequency at which the first pole PK1 occurs, the frequency at which the second pole PK2 occurs, the center frequency fc and the frequency of the first pole PK1 Table 1 shows the difference (fc-PK1) and the bandwidth BW10 with a 10 dB drop.

[0062]
FIG. 7 shows the center frequency fc, the frequency that produces the first pole PK1, the frequency that produces the second pole PK2, and the frequency difference between both poles (PK2- FIG. 17 is a diagram showing a graph of PK1). In FIG. 7, the horizontal axis indicates the depths H21 and H22 of the non-through holes 51 and 52, and the left vertical axis indicates the frequency (MHz) of the first pole PK1, the frequency (MHz) of the second pole PK2, and the center frequency. fc, BW10 and the frequency (MHz) of the frequency difference (fc-PK1) are plotted on the right vertical axis.
[0063]
Referring to FIG. 7, the center frequency fc, the frequency that generates the first pole PK1, and the frequency that generates the second pole PK2 increase and decrease as the depths H21 and H22 of the non-through holes 51 and 52 decrease. As it goes down.
[0064]
The frequency difference (fc-PK1) and the bandwidth BW10 show a change characteristic that increases as the depths H21 and H22 of the non-through holes 51 and 52 decrease, and decreases as the depths H21 and H22 decrease.
[0065]
Further, in the case of the embodiment shown in FIGS. 1 to 4, the bottom of the second inner conductor 81 of the non-through hole 51 provided in the resonance part Q1 and the bottom of the non-through hole 52 provided in the resonance part Q2 Since the bottom portion of the inner conductor 82 is opposed to the bottom portion of the second inner conductor 82 via the dielectric substrate 1, the first resonance portion Q1 and the second resonance portion Q2 are mainly formed by the non-connection of the first resonance portion Q1. The through-hole 51 and the non-through-hole 52 of the second resonance section Q2 are capacitively coupled. Therefore, it is not necessary to form a conductor pattern on the first surface 21 as a means for coupling the first resonance section Q1 and the second resonance section Q2. For this reason, miniaturization of the dielectric device is facilitated. Further, since a screen printing step for forming a conductor pattern is not required, the manufacturing cost is reduced.
[0066]
Further, in the embodiment shown in FIGS. 1 to 4, the first terminal 11 for imposition mounting is provided on the outer surface 25 so as to be electrically insulated from the outer conductor 3 by the insulating gap g2. According to this structure, the first terminal 11 can be imposed on the mounting board. The first terminal 11 is electrically coupled to the non-through hole 51 (capacitive coupling).
[0067]
The same applies to the resonance portion Q2, and the second terminal 12 is provided on the outer surface 25 so as to be electrically insulated from the outer conductor 3 by the insulating gap g3. Therefore, the second terminal 12 can be imposed on the mounting board. The second terminal 12 is electrically coupled to the non-through hole 52 (capacitive coupling).
[0068]
Next, various embodiments of the dielectric device according to the present invention will be sequentially described with reference to FIGS. In the attached drawings described above, the same components as those appearing in the preceding drawings are denoted by the same reference numerals, and redundant description will be omitted.
[0069]
FIG. 8 is a perspective view showing another embodiment of the dielectric filter according to the present invention, and FIG. 9 is a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. FIG. 10 is a front sectional view of the dielectric filter shown in FIGS. 8 and 9. These figures show examples of a dielectric filter having two resonance parts Q1 and Q2.
[0070]
In the embodiment shown in FIGS. 8 to 10, the through-hole 41 of the resonance part Q1 and the through-hole 42 of the resonance part Q2 face each other in a substantially parallel relationship with an interval, and the first through-hole 41 of the through-hole 41 is formed. The inner conductor 61 and the first inner conductor 62 in the through hole 42 are electrically coupled (capacitively coupled), and the resonance portions Q1 and Q2 are electrically coupled to each other by this coupling.
[0071]
Also in this embodiment, in order to obtain a predetermined resonance wavelength, the height H1 from the first surface 21 of the dielectric substrate 1 to the second surface 22 thereof is determined by the depth H21 of the non-through hole 51, The distance can be reduced by the sum (H21 + D11) of the distance D11 from the non-through hole 51 to the through hole 41. Therefore, the height and the size of the dielectric substrate 1 can be reduced.
[0072]
In the case of a dielectric filter having a resonance wavelength (λ / 4), if the sum (H21 + D11) = (λ / 8), the height H1 from the first surface 21 of the dielectric substrate 1 to the second surface 22 thereof is obtained. Is also (λ / 8), and the height can be halved from the normally required (λ / 4) to (λ / 8). The same applies to the resonance section Q2 having the same configuration as the resonance section Q1.
[0073]
Moreover, the non-through hole 51 is closed without being opened on the second surface 22, and the depth H 21 of the non-through hole 51 is provided between the non-through hole 51 and the outer conductor 3 on the second surface 22. And a thickness H3 corresponding to the difference (H1−H21) between the height and the height H1 of the dielectric substrate 1. Therefore, by utilizing the thickness H3 of the dielectric substrate 1, the resonance frequency can be adjusted by adjusting the depth H21 of the non-through hole 51.
[0074]
Next, the effects of the present invention will be specifically described with reference to simulation data. 8 to 10, the length H1 of the through holes 41 and 42 is fixed to 3 mm, and the depths (heights) H21 and H22 of the non-through holes 51 and 52 are set to 0.02 mm and 0.25 mm. , 0.5 mm, 0.75 mm, 1.00 mm, 1.25 mm, 1.50 mm, 2.00 mm, and 2.50 mm, frequency-transmission characteristics of nine samples 21 to 29 were determined by simulation.
[0075]
FIG. 11 is a diagram illustrating frequency-transmission characteristics obtained by the above-described simulation. The horizontal axis indicates frequency (MHz), and the vertical axis indicates S21 (dB) which is a transmission characteristic from the first resonance unit Q1 to the second resonance unit Q2.
[0076]
Curve L21 is the frequency-transmission characteristic of sample 21 where H21 and H22 = 0.02 mm, curve L23 is the frequency-transmission characteristic of sample 23 where H21 and H22 = 0.50 mm, and curve L25 is H21 and H22 = 1.00 mm. Curve L27 is the frequency-transmission characteristic of sample 27 with H21, H22 = 1.50 mm; curve L28 is the frequency-transmission characteristic of sample 28 with H21, H22 = 2.00 mm; The curve L29 shows the frequency-transmission characteristics of the sample 29 when H21 and H22 = 2.50 mm, respectively.
[0077]
As shown in FIG. 11, as the depths H21 and H22 of the non-through holes 51 and 52 increase, the frequency-transmission characteristic shifts to a lower frequency side, and the resonance frequency decreases. As the depths H21 and H22 of 51 and 52 become shallower, the resonance frequency becomes higher. That is, by adjusting the depths H21 and H22 of the non-through holes 51 and 52, the frequency-transmission characteristics can be changed and the resonance frequency can be adjusted.
[0078]
Next, Table 2 shows the bandwidths BW10 of 10 dB drop obtained by the simulations for the samples 21 to 29. The bandwidth BW10 is a bandwidth at a position lower by 10 (dB) from the peak value of the resonance waveform.

[0079]
FIG. 12 is a graph showing the data shown in Table 2. As shown in FIG. 12, in a region where the depths H21 and H21 of the non-through holes 51 and 52 exceed 0.50 (mm), the bandwidth BW10 increases as the depths H21 and H21 become shallower. In a region smaller than 50 (mm), the depth becomes smaller as the depths H21 and H21 become shallower. Therefore, the bandwidth BW10 can be adjusted by adjusting the depths H21 and H21 of the through holes 51 and 52.
[0080]
Further, in the case of the embodiment shown in FIGS. 8 to 10, the first inner conductor 61 of the through hole 41 provided in the resonance part Q1 and the first inner conductor of the through hole 42 provided in the resonance part Q2. 62 are arranged so as to face each other with the dielectric substrate 1 interposed therebetween, so that the first resonance section Q1 and the second resonance section Q2 are connected to the through hole 41 of the first resonance section Q1 and the second resonance section Q1. The through hole 42 of the resonance part Q2 is capacitively coupled to each other. Therefore, it is not necessary to form a conductor pattern on the first surface 21 as a means for coupling the first resonance section Q1 and the second resonance section Q2. For this reason, miniaturization becomes easy. Further, since a screen printing step for forming a conductor pattern is not required, the manufacturing cost is reduced.
[0081]
Further, in the embodiment shown in FIGS. 8 to 10, the first terminal 11 for surface mounting is provided on the outer surface 25 so as to be electrically insulated from the outer conductor 3 by the insulating gap g2. The first terminal 11 is electrically coupled to the non-through hole 51 via the dielectric substrate 1. According to this structure, the first terminal 11 can be imposed on the mounting board.
[0082]
The same applies to the resonance portion Q2, and the second terminal 12 is provided on the outer surface 25 so as to be electrically insulated from the outer conductor 3 by the insulating gap g3. The second terminal 12 is electrically coupled to the non-through hole 52 via the dielectric substrate 1. Therefore, the second terminal 12 can be imposed on the mounting board.
[0083]
Although not shown, the resonance portions Q1 and Q2 may be coupled by an electric coupling between the first inner conductor and the second inner conductor.
[0084]
FIG. 13 is a perspective view showing another embodiment of the dielectric filter according to the present invention, FIG. 14 is a perspective view of the dielectric filter shown in FIG. 13 viewed from the bottom side, and FIG. FIG. 16 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of a dielectric filter, and FIG. 16 is a front sectional view of the dielectric filter shown in FIGS. .
[0085]
In the embodiment shown in FIGS. 13 to 16, three resonating portions Q <b> 1 to Q <b> 3 are arranged in a line on the dielectric substrate 1. The resonance portion Q2 located at the intermediate portion has two non-through holes 52 and 53. Each of the non-through holes 52 and 53 is opened at an interval on the first surface 21 of the dielectric substrate 1 and provided on both sides of the through hole 42. The second inner conductors 82 and 83 provided in each of the non-through holes 52 and 53 are continuous with each other by the conductor 92 and are also continuous with the first inner conductor 62 of the through hole 42.
[0086]
The resonance part Q1 located on one side of the resonance part Q2 has a through hole 41 and a non-through hole 51. The through hole 41 includes a first inner conductor 61, and the non-through hole 51 includes a second inner conductor 81. The non-penetrating hole 51 is opened in the second surface 22, and the bottom is opposed to the bottom of the non-penetrating hole 52 of the resonance part Q2. Therefore, the resonance portion Q1 and the resonance portion Q2 are located between the second inner conductor 81 formed inside the non-through hole 51 and the second inner conductor 82 formed inside the non-through hole 52. Coupled by capacitive coupling.
[0087]
The resonance part Q3 located on the other side of the resonance part Q2 has a through-hole 43 and a non-through-hole. The through hole 43 has a first inner conductor 63, and the non-through hole 54 has a second inner conductor 84. The non-through hole 54 is opened in the second surface 22, and the bottom is opposed to the bottom of the non-through hole 53 of the resonance part Q <b> 2. Therefore, the resonance portion Q2 and the resonance portion Q3 are located between the second inner conductor 83 formed inside the non-through hole 53 and the second inner conductor 84 formed inside the non-through hole 54. Coupled by capacitive coupling.
[0088]
FIG. 17 is a diagram showing frequency-transmission characteristics obtained by simulation for the dielectric filters shown in FIGS. In the figure, the horizontal axis indicates frequency (MHz), and the vertical axis indicates the transmission amount S21 (dB) to the resonance units Q1 to Q3.
[0089]
FIG. 18 is a diagram showing frequency-reflection characteristics obtained by simulation for the dielectric filters shown in FIGS. In the figure, the horizontal axis represents frequency (MHz), and the vertical axis represents reflection amount S11 (dB).
[0090]
FIG. 19 is a perspective view showing another embodiment of the dielectric filter according to the present invention, and FIG. 20 is a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. It is a perspective view which shows a structure of.
[0091]
In the embodiment of FIGS. 19 and 20, the resonance sections Q1 and Q2 are arranged side by side. That is, the through-hole 41 of the resonance part Q1 and the through-hole 42 of the resonance part Q2 are provided side by side at an interval, and the non-through-hole 51 of the resonance part Q1 and the non-through-hole 52 of the resonance part Q2 are spaced apart. It is attached. The non-through hole 51 of the resonance part Q1 opens on the first surface 21, and the non-through hole 52 of the resonance part Q2 opens on the second surface 22.
[0092]
The first terminal 11 is provided on the surface 25 of the dielectric substrate 1 and is capacitively coupled via the dielectric substrate 1 to the second inner conductor 81 provided in the non-through hole 51 of the resonance part Q1. The second terminal 12 is also provided on the surface 25 of the dielectric substrate 1 and is capacitively coupled via the dielectric substrate 1 to the second inner conductor 82 provided in the non-through hole 52 of the resonance section Q2.
[0093]
FIG. 21 is a perspective view showing another embodiment of the dielectric filter according to the present invention. FIG. 22 is a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. It is a perspective view which shows a structure of.
[0094]
In the embodiment shown in FIGS. 21 and 22, in the resonance part Q1 and the resonance part Q2, the distance between the through holes 41 and 42 is reduced, or the distance between the non-through holes 51 and 52 is increased. Are arranged side by side in a relationship. That is, the distance between the through-hole 41 of the resonance part Q1 and the through-hole 42 of the resonance part Q2 is smaller than the distance between the non-through-hole 51 of the resonance part Q1 and the non-through-hole 52 of the resonance part Q2. . The non-through hole 51 of the resonance part Q1 opens on the first surface 21, and the non-through hole 52 of the resonance part Q2 opens on the second surface 22.
[0095]
FIG. 23 is a perspective view showing another embodiment of the dielectric filter according to the present invention, and FIG. 24 is a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. It is a perspective view which shows a structure of.
[0096]
In the embodiment shown in FIG. 23 and FIG. 24, in the resonance part Q1 and the resonance part Q2, the distance between the non-through holes 51 and 52 or the distance between the through holes 41 and 42 is increased. Are arranged side by side in a relationship. That is, the interval between the non-through hole 51 of the resonance unit Q1 and the non-through hole 52 of the resonance unit Q2 is smaller than the interval between the through hole 41 of the resonance unit Q1 and the through hole 42 of the resonance unit Q2. . The non-through hole 51 of the resonance part Q1 opens on the first surface 21, and the non-through hole 52 of the resonance part Q2 opens on the second surface 22.
[0097]
FIG. 25 is a perspective view showing another embodiment of the dielectric filter according to the present invention, and FIG. 26 is a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. It is a perspective view which shows a structure of.
[0098]
In the embodiment shown in FIGS. 25 and 26, in the resonating portions Q1 and Q2, the diameters of the non-through holes 51 and 52 are smaller than the diameters of the through holes 41 and. The non-through hole 51 of the resonance part Q1 opens on the first surface 21, and the non-through hole 52 of the resonance part Q2 opens on the second surface 22. Although not shown, various hole diameters and hole shapes can be used.
[0099]
FIG. 27 is a perspective view showing another embodiment of the dielectric filter according to the present invention. In this embodiment, recesses 27 and 28 having a step ΔH1 are provided at positions where the through holes 41 and 42 are opened. The recesses 27 and 28 may be groove-shaped. This embodiment shows that the frequency-transmission characteristic can be adjusted by changing the length of the through holes 41 and 42. The first terminal 11 is formed continuously on the side surface 25 and the side surface 23. The second terminal 12 is formed continuously from the side surface 25 to the side surface 24.
[0100]
Next, a duplexer which is another important application example of the dielectric device according to the present invention will be described.
[0101]
FIG. 28 is a perspective view of the duplexer according to the present invention, and FIG. 29 is a perspective view of the duplexer shown in FIG. 29 as viewed from the bottom side. The illustrated duplexer has five resonance parts Q1 to Q5. Each of the resonance portions Q1 to Q5 shares the dielectric substrate 1 and is integrated via the dielectric substrate 1.
[0102]
Of the resonance portions Q1 to Q5, the resonance portion Q1 is a combination of the through hole 41 and the non-through hole 51, the resonance portion Q2 is a combination of the through hole 42 and the non-through holes 52 and 53, and the resonance portion Q3 is a combination of the through hole 43. The combination with the non-through holes 54 and 55 is included, respectively. The resonance part Q4 includes a combination of the through hole 44 and the non-through holes 56 and 57, and the resonance part Q5 includes a combination of the through hole 45 and the non-through hole 58.
[0103]
The non-through-hole 51 of the resonance part Q1, the non-through-holes 54 and 55 of the resonance part Q3, and the non-through-hole 58 of the resonance part Q5 are opened in the first surface 21 of the dielectric substrate 1, and the non-penetration of the resonance part Q2 is formed. The holes 52 and 53 and the non-through holes 56 and 57 of the resonance part Q4 open in the second surface 22 of the dielectric substrate 1.
[0104]
The bottoms of the non-through holes 51 of the resonance part Q1 and the non-through holes 52 of the resonance part Q2 face each other via the dielectric substrate 1 and are capacitively coupled. The bottoms of the non-through holes 53 of the resonance section Q2 and the non-through holes 54 of the resonance section Q3 face each other via the dielectric substrate 1 and are capacitively coupled. The bottoms of the non-through holes 55 of the resonance part Q3 and the non-through holes 56 of the resonance part Q4 face each other via the dielectric substrate 1, and are capacitively coupled. The bottoms of the non-through holes 57 of the resonance part Q4 and the non-through holes 58 of the resonance part Q5 face each other via the dielectric substrate 1 and are capacitively coupled.
[0105]
The structures of the through-holes (41 to 45) and the non-through-holes (51 to 58) and the details of the relative relationship are as described with reference to FIGS.
[0106]
A first terminal 11, a second terminal 12, and a third terminal 13 are provided on a side surface 25 of the dielectric substrate 1. The first terminal 11 is separated from the outer conductor 3 by a gap g2, and is electrically coupled (capacitively coupled) to the non-through hole 51 of the resonance part Q1. The second terminal 12 is separated from the outer conductor 3 by a gap g3, and is electrically coupled (capacitively coupled) to the through hole 43 of the resonance part Q3. The third terminal 13 is separated from the outer conductor 3 by a gap g4, and is electrically coupled (capacitively coupled) to the non-through hole 58 of the resonance part Q5.
[0107]
Since the duplexer is used as an antenna duplexer, the resonance sections Q1 to Q5 are divided into two sections for transmission and reception. 28 and 29, if the first terminal 11 is used as a receiving input terminal, the second terminal 12 is used as a common terminal, and the third terminal 13 is used as a transmitting output terminal. In FIG. 28 and FIG. 29, the left side of the second terminal 12 forms a reception resonance unit, and the right side of the second terminal 12 forms a transmission resonance unit.
[0108]
According to the above configuration, the resonance wavelength is adjusted by adjusting the depths of the through holes 41 to 45, the non-through holes 51 to 58, and the hole intervals in each of the resonance portions Q1 to Q5, and the resonance frequency is set to a predetermined value. It is discussed in detail in the description of the dielectric filter shown in FIGS. 1 to 27 that it can be adjusted with high precision, that the size and height can be reduced, and that the transmission characteristics can be easily adjusted. It is as follows.
[0109]
Although not shown, various structures exemplified in the dielectric filter (see FIGS. 1 to 27) can of course be applied to the duplexer.
[0110]
【The invention's effect】
As described above, according to the present invention, the following effects can be obtained.
(A) It is possible to provide a dielectric device suitable for miniaturization and reduction in height.
(B) A dielectric device whose resonance frequency can be easily adjusted can be provided.
(C) A dielectric device whose transmission characteristics can be easily adjusted can be provided.
[Brief description of the drawings]
FIG. 1 is a perspective view of a dielectric filter according to the present invention.
FIG. 2 is a perspective view of the dielectric filter shown in FIG. 1 as viewed from a bottom surface side.
FIG. 3 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIGS. 1 and 2;
FIG. 4 is a front sectional view of the dielectric filter shown in FIGS.
FIG. 5 is a diagram showing a relationship between a resonator length and a resonance frequency of the dielectric filter shown in FIGS. 1 to 4;
FIG. 6 is a diagram showing frequency-transmission characteristics obtained by simulation.
FIG. 7 is a graph showing the center frequency fc, the frequency at which the first pole PK1 is generated, the frequency at which the second pole PK2 is generated, and the frequency difference (PK2-PK1) between the two poles described in Table 1.
FIG. 8 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
9 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG.
FIG. 10 is a front sectional view of the dielectric filter shown in FIGS. 8 and 9;
FIG. 11 is a diagram showing frequency-transmission characteristics obtained by simulation.
FIG. 12 is a graph showing the data shown in Table 2;
FIG. 13 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
FIG. 14 is a perspective view of the dielectric filter shown in FIG. 13 as viewed from the bottom side.
FIG. 15 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIGS. 13 and 14.
FIG. 16 is a front sectional view of the dielectric filter shown in FIGS. 13 to 15;
FIG. 17 is a diagram showing frequency-transmission characteristics obtained by simulation for the dielectric filters shown in FIGS. 13 to 16;
FIG. 18 is a diagram showing frequency-reflection characteristics obtained by simulation for the dielectric filters shown in FIGS. 13 to 16;
FIG. 19 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
20 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG.
FIG. 21 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
FIG. 22 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG.
FIG. 23 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
FIG. 24 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. 23.
FIG. 25 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
26 is a perspective view showing a configuration of a through hole, a first inner conductor, a non-through hole, and a second inner conductor of the dielectric filter shown in FIG. 25.
FIG. 27 is a perspective view showing another embodiment of the dielectric filter according to the present invention.
FIG. 28 is a perspective view of a duplexer according to the present invention.
FIG. 29 is a perspective view of the duplexer shown in FIG. 28 as viewed from the bottom surface side.
[Explanation of symbols]
1 Dielectric substrate
21 First side
22 Second side
3 outer conductor
41-45 through hole
51-58 Non-through hole

Claims (12)

A dielectric device including a dielectric substrate and a plurality of resonance sections, wherein the dielectric substrate has an outer conductor covering an outer surface, and the outer surface has a first surface and a second surface facing each other. Includes,
Each of the resonance sections includes a through-hole and a non-through-hole,
The through hole is provided in the dielectric substrate, is opened on the first and second surfaces, and has a first inner conductor therein.
The non-through-hole is provided in the dielectric base at an interval from the through-hole, is open on one of the first and second surfaces, is closed at the bottom, and has a second inner portion therein. A conductor, wherein the second inner conductor is continuous with the first inner conductor on one of the first and second surfaces;
The dielectric device, wherein the plurality of resonance units include a resonator in which the non-through hole opens on the first surface and a resonator in which the non-through hole opens on the second surface. 2. The dielectric device according to claim 1, wherein at least one pair of adjacent resonating portions of the plurality of resonating portions is electrically coupled between the second inner conductor and the second inner conductor, 3. A dielectric device that is coupled by electrical coupling between the first inner conductor and the first inner conductor or electrical coupling between the first inner conductor and the second inner conductor. 3. The dielectric device according to claim 1, wherein, of the plurality of resonance units, one of adjacent resonance units has the non-through hole opened in the first surface, and the other has the non-through hole. A dielectric device, wherein a through hole is opened on the second surface. 4. The dielectric device according to claim 3, wherein adjacent resonance units are electrically coupled by said second inner conductor. 5. The dielectric device according to claim 4, wherein the second inner conductors of the adjacent resonating portions have bottom portions opposed to each other via the dielectric substrate. 6. The dielectric device according to any one of claims 1 to 5, wherein at least one resonating portion has a plurality of the non-through holes, and each of the plurality of non-through holes is spaced apart from each other. And a dielectric device in which the second inner conductors respectively provided are continuous. The dielectric device according to claim 1, wherein the first and second surfaces are covered by the outer conductor and non-covered by the outer conductor. And a covering area,
The through hole is open in the uncovered area on one of the first and second surfaces, and is open on the other in the covered area, and the first inner conductor is continuous with the outer conductor in the covered area. And
The non-through hole is open in the uncovered region on one of the first and second surfaces, and the second inner conductor is continuous with the first inner conductor in the uncovered region. Dielectric device. The dielectric device according to claim 1, further comprising a terminal, wherein the terminal is provided on the dielectric substrate and is electrically coupled to the resonance unit. apparatus. 9. The dielectric device according to claim 8, wherein the terminal is provided on the outer surface of the dielectric substrate, and is electrically coupled to the second inner conductor via a layer of the dielectric substrate. Dielectric device. The dielectric device according to any one of claims 1 to 9, wherein the dielectric device is a dielectric filter. 10. The dielectric device according to claim 1, wherein the dielectric device is a duplexer. The dielectric device according to claim 11, wherein
Including three or more resonance units and first to third terminals,
The first terminal is electrically coupled to at least one of the resonance units;
The second terminal is electrically coupled to at least one other of the resonance unit;
The dielectric device, wherein the third terminal is electrically coupled to at least one of the remaining portions of the resonance unit.

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