JP2004047240A - Electron-emitting element, manufacturing method therefor and display device therewith - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide high light-emitting efficiency which is realized by optimizing the arrangement density of the carbonaceous acicular substance when forming emitters in an electron-emitting element using a carbonaceous acicular substance such as carbon nanotubes. <P>SOLUTION: A manufacturing method for an electron-emitting element includes following processes: a first process in which a laminated plate is formed on a base substrate 3 in order of a cathode electrode 4, an insulating layer 5 and a gate electrode 6, and then a gate hole 7 is formed onto it, in addition, an emitter 8 is formed in the gate hole 7 by arranging a plurality of carbonaceous acicular substances 9; and a second process in which a plurality of spheres 13 are filled in the gate hole 7, and thus parts of the substances 9 are made to be bent in a state of being lied sideways with respect to the base substrate 3 by the spheres 13-to-substances 9 contact. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a field emission type electron-emitting device, a method for manufacturing the same, and a display device using the electron-emitting device.
[0002]
[Prior art]
When an electric field of a certain threshold or more is applied to a surface of a conductor such as a metal or a semiconductor placed in a vacuum, electrons pass through a barrier due to a tunnel effect, and the electrons are emitted into the vacuum even at room temperature. This phenomenon is called field emission, and the cathode that emits electrons by this is called a field emission cathode. In recent years, an FED (Field Emission Display) has attracted attention as a flat display device (flat display device) in which a large number of micron-sized field emission cathodes are formed on a substrate using semiconductor processing technology. The FED emits electrons by the concentration of an electric field from an electrically selected (addressing) emitter, and collides the electrons with a phosphor on the anode substrate side to display an image by excitation and emission of the phosphor. It is.
[0003]
FIG. 8 is a schematic sectional view showing a configuration example of a main part of a conventional display device (FED), and FIG. 9 is a schematic perspective view thereof. In the figure, a cathode substrate 51 and an anode substrate 52 are arranged to face each other with a small gap therebetween. A vacuum is maintained between the cathode substrate 51 and the anode substrate 52. The cathode substrate 51 includes a base substrate 53, a cathode electrode 54, a resistance layer 55, an insulating layer 56, a gate electrode 57, and an emitter 58. A gate hole 59 is formed in the gate electrode 57 and the insulating layer 56. In the gate hole 59, a cone-shaped (substantially conical) emitter 58 is formed. This emitter 58 is also called Spindt-type emitter. On the other hand, the anode substrate 52 includes a base substrate 60, an anode electrode 61, and a phosphor 62. The anode electrode 61 is formed of a transparent electrode such as ITO (Indium Tin Oxide), and the phosphor 62 has phosphors corresponding to red, green, and blue colors arranged side by side in an area of one pixel.
[0004]
Here, a manufacturing process of the display device (FED) having the above configuration will be briefly described. First, to obtain the cathode substrate 51, a cathode electrode 54, a resistance layer 55, an insulating layer 56, and a gate electrode 57 are sequentially stacked on a base substrate 53 by a vapor deposition method. Next, a photo process (photoresist application, patterning, etching) is performed to form a gate hole 59 in the gate electrode 57 and the insulating layer 56, and then the photoresist is removed.
[0005]
Next, while the base substrate 53 is being rotated, aluminum or the like is vapor-deposited in an oblique direction with respect to the substrate surface, thereby forming a peeling layer made of aluminum only on the surface of the gate electrode 57 and the opening edge thereof. Subsequently, a metal serving as an emitter material, for example, molybdenum is deposited on the release layer. Thus, the opening diameter of the gate hole 59 gradually decreases with the deposition of molybdenum, and the gate hole 59 is finally completely closed. As a result, a cone-shaped emitter 58 is formed in the gate hole 59 by depositing an emitter material (molybdenum). Thereafter, unnecessary emitter material on the gate electrode 57 is removed by etching together with the release layer.
[0006]
On the other hand, in obtaining the anode substrate 52, after forming the anode electrode 61 such as ITO on the base substrate 60, the phosphor 62 is formed by applying a phosphor material. Further, the thus obtained cathode substrate 51 and anode substrate 52 are sealed in a vacuum state with a gap of, for example, 0.2 to 1.0 mm. In the above manufacturing process, since the distance between the emitter 58 and the gate electrode 57 is controlled to a submicron level, an electric field is applied to the tip of the emitter 58 by applying a voltage of several tens of volts between them. And electrons can be emitted from the emitter 58 into a vacuum by a tunnel effect accompanying the concentration. At this time, for example, when the discharge current to the emitter 58 increases, the resistance layer 55 decreases the effective voltage acting on the emitter 58 by increasing the voltage drop due to the resistance, and conversely, when the discharge current decreases. By increasing the effective voltage acting on the emitter 58, it serves to stabilize the discharge current.
[0007]
By the way, in recent years, as a configuration of the field emission type cathode, an emitter structure using a carbon nanotube from which an infinite number of extremely sharp tips are obtained has been proposed. In general, carbon nanotubes have a high aspect ratio and a very small radius of curvature at the tip, and thus have attracted attention as electron emission sources that achieve high luminous efficiency.
[0008]
[Problems to be solved by the invention]
As one of the techniques for forming an emitter using carbon nanotubes, a CVD method (Chemical Vapor Deposition) is known. However, when carbon nanotubes are formed by the CVD method, the arrangement density of the carbon nanotubes becomes extremely high. In such a case, as shown in FIG. 10A, the electric field hardly penetrates between the carbon nanotubes 63 as a characteristic of the FED, so that the potential distribution is smoothed at the tip of the carbon nanotubes 63. As a result, it is difficult for the electric field to concentrate on the tip of the carbon nanotube 63, and the luminous efficiency is reduced.
[0009]
On the other hand, as shown in FIG. 10 (B), when the carbon nanotubes 63 are arranged with an appropriate distance L therebetween, the electric field tends to concentrate on the tip of the carbon nanotubes 63, so that light emission is caused. Increases efficiency. However, in the CVD method or the like in which the carbon nanotubes 63 are formed directly on the cathode electrode 54, the arrangement density of the carbon nanotubes 63 cannot be controlled, so that it is difficult to realize high luminous efficiency.
[0010]
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to form a carbon-based needle-like material when an emitter of an electron-emitting device is formed using a carbon-based needle-like substance such as a carbon nanotube. An object is to achieve high luminous efficiency by optimizing the arrangement density of substances.
[0011]
[Means for Solving the Problems]
In the method of manufacturing an electron-emitting device according to the present invention, a first step of arranging a plurality of carbon-based needles in a gate hole on a substrate to form an emitter, and filling a plurality of spheres in the gate hole And a second step of bending a part of the plurality of carbon-based needle-like substances in a state of being laid sideways on the substrate by contact with the plurality of spheres.
[0012]
In this method for manufacturing an electron-emitting device, after arranging a plurality of carbon-based needle-like substances in a gate hole on a substrate to form an emitter, the gate hole is filled with a plurality of spheres, and the plurality of spheres are filled. By bending a part of the plurality of carbon-based needle-like substances sideways with respect to the substrate by the contact, the arrangement state of the carbon-based needle-like substances in the gate hole becomes less sparse than when the emitter is formed. That is, when a plurality of spheres are filled in the gate hole, for example, among the plurality of carbon-based needles arranged at a high density in a state of being substantially vertically oriented by a CVD method, some of the carbon-based needles are: By contact with each sphere, it bends sideways, and the other carbon-based needle-like substances are maintained in a substantially vertically oriented state in the gap formed by each sphere. Therefore, after forming an emitter with a plurality of carbon-based needles, the gate hole is filled with a plurality of spheres, whereby the arrangement density of the carbon-based needles can be reduced. As a result, in the electron-emitting device obtained by this manufacturing method and the display device using the same, the arrangement density of the plurality of carbon-based needle-like substances is increased so that the electric field is easily concentrated on the tip of the carbon-based needle-like substance. Can be optimized.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0014]
FIG. 1 is a schematic sectional view showing a configuration example of a main part of a display device (FED) according to an embodiment of the present invention, and FIG. 2 is a schematic perspective view thereof. In the figure, a cathode substrate 1 and an anode substrate 2 are arranged facing each other with a small gap therebetween. A vacuum is maintained between the cathode substrate 1 and the anode substrate 2. The cathode substrate 1 includes a base substrate 3 made of a glass substrate or the like, a cathode electrode 4, an insulating layer 5, a gate electrode 6 sequentially laminated on the base substrate 3, and a gate hole 7 formed on the base substrate 3. And an emitter 8 formed in the gate hole 7. A field emission type electron-emitting device is constituted by these components. FIGS. 1 and 2 show only a portion corresponding to one pixel of the electron-emitting device. Further, a resistance layer (not shown) for stabilizing the discharge current is formed in the same pattern as the cathode electrode 4.
[0015]
Among the above-described components, the cathode electrode 4 is formed in a stripe shape (band shape) so as to form a plurality of cathode lines on the base substrate 3 as shown in FIG. Are formed in a stripe shape (band shape) so as to constitute a plurality of gate lines crossing the cathode line. The intersection of the cathode electrode 4 and the gate electrode 6 constitutes one pixel. The insulating layer 5 has an electrical insulating function between the cathode electrode 4 and the gate electrode 6, and is formed in a layer between the electrodes. A plurality of gate holes 7 are formed at intersections of the cathode electrode 4 and the gate electrode 6 so as to penetrate the insulating layer 5 and the gate electrode 6. The hole shape of the gate hole 7 is circular. The emitter 8 is formed on the cathode electrode 4 in the gate hole 7. The emitter 8 is formed by a plurality of carbon-based needle-like substances 9 implanted on the cathode electrode 4.
[0016]
It is desirable to use carbon nanotubes as the carbon-based acicular substance 9. The carbon nanotube is a single-layer or multi-layer cylindrical shape obtained by rolling a graphene sheet, and is a material having a high aspect ratio of about 0.7 to 50 nm in diameter and several μm in length. However, any substance other than carbon nanotubes may be used as the carbon-based acicular substance 9 as long as it is a substance having a fine acicular structure that can be used as an emitter material.
[0017]
On the other hand, the anode substrate 2 constitutes a front panel of the FED, and includes a base substrate 10 made of a transparent glass substrate, and an anode electrode 11 and a phosphor 12 laminated on the base substrate 10. . The anode electrode 11 is formed of a transparent electrode such as ITO, and the phosphor 12 is formed by arranging phosphors corresponding to red, green, and blue in an area of one pixel.
[0018]
In the display device including the electron-emitting device having the above configuration, when an anode voltage (high voltage) is applied to the anode electrode 11 and a cathode voltage is applied to the cathode electrode 4 and a positive gate voltage is applied to the gate electrode 6, respectively, the emitter 8 is turned off. An electric field is concentrated on the sharp edge (tip) of each carbon-based acicular substance 9 to be formed, and electrons are emitted from the emitter 8 into a vacuum by a tunnel effect caused by the concentration of the electric field. The emitted electrons are attracted to the anode electrode 11 of the anode substrate 2 and collide with the phosphor 12. As a result, the phosphor 12 is excited and emits light, and an image is displayed.
[0019]
Here, the luminous efficiency of the FED is greatly affected by the arrangement density of the plurality of carbon-based needle-like substances 9 forming the emitter 8. That is, when the arrangement density of the carbon-based needles 9 is excessively high (when the arrangement is dense), the potential distribution is smoothed at the tip of the carbon-based needles 9 as described above. Concentration of the electric field is unlikely to occur. Conversely, when the arrangement density of the carbon-based needle-like substances 9 is excessively low (when the arrangement is sparse), the concentration of the electric field is likely to occur in the emitter 8, but the concentration per unit area is increased. Since the number of carbon-based needles 9 is small, the amount of emitted electrons is small. Therefore, high luminous efficiency cannot be obtained in any case. Therefore, in the embodiment of the present invention, in manufacturing the electron-emitting device, the following manufacturing method is adopted in order to optimize (preferably optimize) the arrangement density of the carbon-based acicular substances 9 in the emitter 8. It was decided to.
[0020]
FIG. 4 is a flowchart showing, as a method of manufacturing the display device (FED) according to the embodiment of the present invention, a process of manufacturing the cathode substrate 1 which particularly constitutes the electron-emitting device.
[0021]
[Step of forming cathode electrode; S1]
First, the cathode electrode 4 is formed on the base substrate 3. As the electrode material forming the cathode electrode 4, any material may be used as long as it has a low electrical resistance, such as a metal such as chromium, tantalum, tungsten, and molybdenum. The formation pattern of the cathode electrode 4 is stripe-shaped, and as a formation method, it is convenient to adopt a printing method in which a paste-like electrode material is applied by printing. However, as another forming method, the cathode electrode 4 may be formed in a stripe shape by a known photolithography process. In this case, a spin coating method can be used as a coating method.
[0022]
[Step of forming insulating layer; S2]
Next, an insulating layer 5 is formed on the base substrate 3 so as to cover the cathode electrode 4. As a material forming the insulating layer 5, any material having an electrically high insulating property such as SiO ₂ (silicon dioxide) may be used. The insulating layer 5 is formed in a layer shape so as to entirely cover the upper surface of the base substrate 3. As a method for forming the insulating layer 5, for example, a so-called film forming method such as a spin coating method, a printing method, a sputtering method, and an evaporation method can be used.
[0023]
[Step of forming gate electrode; S3]
Next, the gate electrode 6 is formed on the insulating layer 5 of the base substrate 3 stacked as described above. As the electrode material forming the gate electrode 6, any material may be used as long as it has a low electrical resistance, such as a metal such as chromium, tantalum, tungsten, and molybdenum. The formation pattern of the gate electrode 6 is a stripe shape substantially orthogonal to the cathode electrode 4, and the formation method can be the same as the formation method of the cathode electrode 4. Thus, as shown in FIG. 5A, a structure in which the cathode electrode 4, the insulating layer 5, and the gate electrode 6 are sequentially stacked on the base substrate 3 is obtained.
[0024]
[Step of forming gate hole; S4]
Subsequently, predetermined portions of the gate electrode 6 and the insulating layer 5 (portions where the electrode lines of the cathode electrode 4 and the gate electrode 6 cross each other; one pixel portion) are partially etched in accordance with the desired arrangement of the gate holes 7. Thereby, as shown in FIG. 5B, a gate hole 7 is formed on the base substrate 3 in a state where a part of the cathode electrode 4 is exposed. The plurality of gate holes 7 are formed in the above-mentioned predetermined portion. Either a wet method or a dry method may be employed as an etching method.
[0025]
[Step of forming emitter; S5]
Next, as shown in FIG. 5C, a plurality of carbon-based acicular substances 9 are arranged inside the gate hole 7 to form an emitter 8. As a method for forming the emitter 8, a CVD method can be used. When the CVD method is used, in order to form the emitter 8 at a desired portion in the gate hole 7, a catalyst layer is provided in advance on the emitter forming portion. The catalyst layer is provided on the cathode electrode 4 after forming the cathode electrode 4 on the base substrate 3 (before forming the insulating layer 5). The catalyst layer promotes a growth reaction of carbon nanotubes to become the carbon-based needle-like substance 9. For example, nickel, cobalt, iron, or an alloy composed of at least two of these metals is deposited by vapor deposition, sputtering, electrolytic plating. After being attached to the cathode electrode 4 by a method or the like, it is obtained by patterning by selective etching by photolithography. In the actual step of forming the emitter, carbon nanotubes are grown on the catalyst layer in the gate hole 7 by the CVD method, so that the plurality of carbon-based acicular substances 9 are implanted on the base substrate 3 and the emitter 8 is formed. Is formed. By forming the emitters 8 by using the CVD method in this manner, it is possible to arrange a plurality of carbon-based needle-like substances 9 in the gate holes 7 at a high density while being oriented substantially perpendicular to the base substrate 8. it can.
[0026]
[Spherical dispersion process; S6]
Thereafter, as shown in FIG. 6A, a large number of spheres 13 are scattered on the base substrate 3. Each sphere 13 is a hard sphere composed of an organic material, an inorganic material, or a combination thereof, and has a uniform size (for example, a particle size distribution of about 1 to 3%). As a method of dispersing the spheres 13, a method of spraying a large number of spheres 13 toward the base substrate 3 from above while holding the base substrate 3 in a horizontal state with the gate hole 7 facing upward, or a coater (coating device) ) Can be used. Regardless of the method of spraying, the state after spraying is such that a large number of spheres 13 are stacked on the base substrate 3 (particularly in the gate hole 7).
[0027]
[Pressing step; S7]
Next, a plurality of spheres 13 are densely filled in the gate hole 7 by applying pressure in a direction (downward in FIG. 5A) in which the large number of spheres 13 scattered earlier are pushed into the gate hole 7. At this time, by contact with the plurality of spheres 13 filled in the gate hole 7, a part of the plurality of carbon-based acicular substances 9 is bent in a state of lying sideways with respect to the base substrate 3.
[0028]
Here, the “side-down state” refers to, for example, when the substrate surface of the base substrate 3 is set to a zero reference, the carbon-based acicular substance 9 is inclined at a predetermined inclination angle (for example, 0 to 45) with respect to this substrate surface. (Sharp angle of °). Therefore, the side-down state includes a state in which the carbon-based needle-like substance 9 is lying on the base substrate 3 almost directly along the substrate surface (a state in which the inclination angle is almost 0 °), and Both the state where the carbon-based needle-shaped substance 9 is inclined obliquely is included. In addition, the term “part of the plurality of carbon-based needles 9” means a part (for example, a half) of all the carbon-based needles 9 implanted in the gate hole 7 in the emitter forming step. ). The ratio of the plurality of carbon-based needle-shaped substances 9 to be laid down depends on the arrangement density of the carbon-based needle-shaped substances 9 at the time of forming the emitter, the diameter of the sphere 13 to be used, and the like.
[0029]
Further, as a method of pressing the spheres 3, for example, a pressure pad having rubber-like elasticity is applied to a large number of spheres 13 spread on the base substrate 3 so that a uniform pressing force acts on each sphere 3. Can be used. The pressurization of the sphere 3 is performed temporarily, and then the pressurization is released. By pressurizing the spheres 3 in this manner, the inside of the gate hole 7 is densely filled in a state where the spheres 3 are in contact with each other, and a part of the plurality of carbon-based acicular substances 9 is 13 to bend and bend sideways.
[0030]
As a result, in the gate hole 7, only the carbon-based needle-like substances 9 located in the gaps formed by the respective spheres 13 in the plane direction of the base substrate 3 are vertically oriented. Therefore, in the gate hole 7, the proportion of the vertically oriented carbon-based needles 9 decreases according to the number of the carbon-based needles 9 that have fallen sideways due to contact with the sphere 13. Therefore, the distance between the carbon-based acicular substances 9 becomes longer than when the emitter 8 is formed by the CVD method. Therefore, the arrangement density of the plurality of carbon-based needle-like substances 9 forming the emitter 8 can be substantially reduced.
[0031]
In addition, the distance between the adjacent carbon-based needle-shaped substances 9 in the gate hole 7 after the above-described pressurizing step is a dimension directly reflecting the diameter (particle diameter) of the sphere 13. Therefore, it is possible to arbitrarily control the separation dimension of the carbon-based acicular substance 9 using the diameter of the sphere 13 used as a parameter. In particular, in order to enhance the luminous efficiency, in FIG. 10B, it is ideal that the dimensional relationship between the distance L between the carbon-based needles and the height H of the carbon-based needles is approximately 1: 1. It is. Therefore, in the step of dispersing the spheres, by using the spheres 13 having a diameter satisfying this ideal dimensional relationship (that is, a diameter substantially equal to the length of the carbon-based needle-like substance 9), the carbon in the gate hole 7 is reduced. It is possible to optimize the arrangement density of the needle-like substances 9.
[0032]
[Sphere removal step; S8]
Thereafter, when it is preferable that the sphere 13 does not remain as the final form of the electron-emitting device, the sphere 13 is removed from the base substrate 3 as shown in FIG. When an organic material is used as the material of the sphere 13, the sphere 13 can be removed by burning off the organic material by burning and evaporating, that is, by firing. When the sphere 13 is removed by firing, a material that is carbonized at a firing temperature (for example, 400 to 500 ° C.) that does not adversely affect the characteristics of the cathode substrate 1 is used as the organic material (polymer material or the like) forming the sphere 13. It is desirable to use Examples of typical organic materials include styrene, urethane, acrylic, vinyl, divinylbenzene, melanin, formaldehyde, and polymethylene homopolymers and copolymers.
[0033]
The cathode substrate 1 is obtained by the above manufacturing process. However, in obtaining the cathode substrate 1, the following steps S6 ', S7' and S8 'can be adopted instead of the above steps S6, S7 and S8.
[0034]
[Sheet attaching process; S6 ']
First, as shown in FIG. 7A, a sheet 14 in which a large number of spheres 13 are fixed in a densely arranged state in advance is bonded to the base substrate 3. The sheet 14 has appropriate flexibility, and is bonded to the base substrate 13 with the surface on which the sphere 13 is fixed facing the gate hole 7. A large number of spheres 13 are sprayed and fixed on the sheet 14 in advance. At this time, the spheres 13 are densely arranged in a plane such that the spheres 13 are in contact with each other in the surface direction of the sheet 14.
[0035]
[Decompression step; S7 ']
Next, the space between the base substrate 3 and the sheet 14 is depressurized by evacuation, whereby the sheet 14 is deformed into a concave shape at the portion where the gate hole 7 is formed, as shown in FIG. As a result, the plurality of spheres 13 are densely filled in the gate hole 7, and by contact with these spheres 13, a part of the plurality of carbon-based needle-like substances 9 is transferred to the base substrate 3 as described above. On the other hand, it can be bent to a sideways position. The pressure reduction by evacuation is performed temporarily, and then the pressure reduction is released.
[0036]
[Sheet peeling step; S8 ']
After that, the sheet 14 is peeled off from the base substrate 3. By peeling off the sheet 14, the sphere 13 is removed from the base substrate 13 together with the sheet 14. Therefore, the sphere 13 does not remain as the final form of the electron-emitting device.
[0037]
By combining the cathode substrate 1 obtained through the above manufacturing process with the anode substrate 2 to form an electron-emitting device, a plurality of carbon-based materials forming the emitter 8 are formed in the gate hole 7 on the base substrate 3. A part of the acicular substance 9 is bent and arranged in a state of being laid sideways on the base substrate 3. Accordingly, in a display device (FED) manufactured using such a manufacturing process, an appropriate distance between the respective carbon-based needle-like substances 9 is ensured. The electric field tends to concentrate on the surface. As a result, more electrons can be emitted from the emitter 8 at a lower voltage, so that the luminous efficiency of the display device can be improved.
[0038]
【The invention's effect】
As described above, according to the present invention, after arranging a plurality of carbon-based needle-like substances in a gate hole on a substrate to form an emitter, the gate hole is filled with a plurality of spheres to form the plurality of spheres. Achieve high luminous efficiency by optimizing the arrangement density of carbon-based needles in the gate hole by bending some of the carbon-based needles sideways with respect to the substrate by contact It is possible to do.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view illustrating a configuration example of a main part of a display device according to an embodiment of the present invention.
FIG. 2 is a schematic perspective view illustrating a configuration example of a main part of the display device according to the embodiment of the present invention.
FIG. 3 is a schematic plan view illustrating a configuration example of a main part of the display device according to the embodiment of the present invention.
FIG. 4 is a flowchart illustrating a method for manufacturing a display device according to an embodiment of the present invention.
FIG. 5 is a view (No. 1) showing a step of manufacturing the electron-emitting device according to the embodiment of the present invention.
FIG. 6 is a view (No. 2) showing a step of manufacturing the electron-emitting device according to the embodiment of the present invention.
FIG. 7 is a view showing another example of the manufacturing process of the electron-emitting device according to the embodiment of the present invention.
FIG. 8 is a schematic cross-sectional view illustrating a configuration example of a main part of a conventional display device.
FIG. 9 is a schematic perspective view showing a configuration example of a main part of a conventional display device.
FIG. 10 is a diagram showing a difference in potential distribution depending on an arrangement state of carbon nanotubes.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Cathode substrate, 2 ... Anode substrate, 3 ... Base substrate, 4 ... Cathode electrode, 5 ... Insulating layer, 6 ... Gate electrode, 7 ... Gate hole, 8 ... Emitter, 9 ... Carbon needle-like substance, 10 ... Base Substrate, 11 anode electrode, 12 phosphor, 13 sphere, 14 sheet

Claims (10)

A first step of arranging a plurality of carbon-based needles in a gate hole on a substrate to form an emitter;
A second step of filling a plurality of spheres in the gate hole and bending a part of the plurality of carbon-based needle-like substances in a state of being laid sideways with respect to the substrate by contact with the plurality of spheres. A method for manufacturing an electron-emitting device, comprising: 2. The method according to claim 1, wherein the carbon-based acicular substance is a carbon nanotube. 2. The method according to claim 1, wherein, in the first step, the plurality of carbon-based needle-like substances are arranged at a high density while being oriented substantially perpendicular to the substrate. 2. The method according to claim 1, wherein in the second step, a sphere having a diameter substantially equal to a length of the carbon-based acicular material is used. In the second step, after spraying a large number of spheres on the substrate, the gate hole is filled with a plurality of spheres by applying pressure in a direction of pushing the large number of spheres into the gate hole. The method for manufacturing an electron-emitting device according to claim 1. In the second step, a sheet in which a large number of spheres are fixed in a densely arranged state in a plane in advance is attached to the substrate with the surface to which the spheres are fixed facing the gate hole, and then the gate hole 2. The method according to claim 1, wherein the gate hole is filled with a plurality of spheres by deforming the sheet in a concave shape at a forming portion. 6. The method for manufacturing an electron-emitting device according to claim 5, wherein the sphere is made of an organic material, and further comprising a third step of removing the sphere from the substrate by firing. The method according to claim 6, further comprising a third step of removing the sphere from the substrate by peeling the sheet from the substrate. An emitter having a plurality of carbon-based needle-like substances arranged in a gate hole on a substrate, and a part of the plurality of carbon-based needle-like substances forming the emitter is placed sideways with respect to the substrate. An electron-emitting device characterized by being bent. An emitter having a plurality of carbon-based needle-like substances arranged in a gate hole on a substrate, and a part of the plurality of carbon-based needle-like substances forming the emitter is placed sideways with respect to the substrate. A display device, comprising: a bent electron emitting element.

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