JP2004043854A - Thin-film forming apparatus and thin-film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus for forming an organic thin film with a uniform thickness by uniformly supplying a source gas to the surface of a substrate, and to provide a thin-film forming method. <P>SOLUTION: The thin-film forming apparatus comprises a treatment chamber 11, a substrate holder 13 installed in the treatment chamber 11, a source-gas feed pipe 21 for supplying a source gas G1 consisting of film-forming components into the treatment chamber 11, and a stirring-gas feed pipe 31 for supplying a stirring gas G2 toward the source gas supplied from the source-gas feed pipe 21, into the treatment chamber 11. The thin-film forming method is characterized by using the apparatus. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a thin film forming apparatus and a thin film forming method, and more particularly to an organic vapor deposition method for forming an organic thin film by supplying a source gas together with a carrier gas to a substrate surface in a processing chamber. And a thin film forming method.
[0002]
[Prior art]
An organic thin film for a low-molecular organic EL light emitting element such as an organic EL display element is generally formed by a vacuum evaporation method.
A vacuum deposition apparatus used for the vacuum deposition method includes a processing chamber, a deposition source provided at a bottom portion in the processing chamber, and a substrate holder disposed above the deposition source and opposed to the deposition source.
[0003]
In a vacuum evaporation apparatus, an organic thin film is formed by evaporating an organic material from an evaporation source, supplying a source gas to the surface of a substrate mounted on a substrate holder, and performing evaporation. In order to control the film formation rate in the film formation using such a vacuum evaporation apparatus, it is necessary to change the evaporation rate of the organic raw material by changing the temperature of the evaporation source.
However, accurate control is difficult because the temperature and the evaporation rate do not correspond linearly, and the evaporation rate shows an unstable behavior by changing the temperature. Further, there is also a problem that the response of the evaporation rate to the temperature change is poor, so that a long process time is required and the productivity is poor.
[0004]
Therefore, in recent years, as a device for forming an organic thin film, an organic vapor deposition device by an organic vapor deposition method (Organic Vapor Phase Deposition (OVPD)) has been proposed (Japanese Unexamined Patent Publication No. 2001-523768).
The organic vapor deposition apparatus includes a processing chamber, a substrate holder provided in the processing chamber, and gas supply means opposed to each other so as to supply a gas toward the substrate holder. By supplying a source gas composed of a film forming component together with a carrier gas to the surface of the substrate mounted on the substrate holder in the processing chamber, an organic thin film is formed.
In such an organic vapor deposition apparatus, the film formation rate is also adjusted depending on the supply rate of the source gas into the processing chamber. It has the advantage of high speed.
[0005]
[Problems to be solved by the invention]
However, in the organic vapor deposition apparatus as described above, the flow of the source gas supplied in a gaseous state into the processing chamber has a direction according to the arrangement of the gas supply ports. Since the gas is supplied to the substrate surface without being sufficiently uniformized depending on the gas concentration, the supply speed, and the like, the distribution of the source gas supplied to the substrate surface tends to be uneven. For this reason, there has been a problem that the thickness distribution of the formed organic thin film becomes non-uniform.
When manufacturing an organic EL display, if the film thickness distribution of the organic thin film is non-uniform, a current flows preferentially in a thin portion because the resistance is small, leading to the occurrence of uneven brightness.
[0006]
[Means for Solving the Problems]
In order to solve the above problems, a thin film forming apparatus according to the present invention includes a processing chamber, a substrate holder provided in the processing chamber, and a source gas for supplying a source gas including a film forming component into the processing chamber. It is characterized by including a supply pipe and a stirring gas supply pipe for supplying a stirring gas into the processing chamber toward the source gas supplied from the source gas supply pipe.
[0007]
According to such a thin film forming apparatus, since the apparatus includes the stirring gas supply pipe that supplies the stirring gas toward the source gas supplied from the source gas supply pipe, the supply of the stirring gas enables processing. The source gas is stirred in the chamber, and the distribution of the source gas in the processing chamber is made uniform.
As a result, the source gas can be supplied uniformly to the substrate surface, and an organic thin film having a more uniform film thickness can be formed.
[0008]
Further, according to the thin film forming method of the present invention, after the substrate is housed in the processing chamber, a source gas composed of a film forming component is supplied into the processing chamber, and a stirring gas is supplied to the source gas supplied into the processing chamber. Is supplied, the source gas is stirred, and the stirred source gas is supplied to the surface of the substrate to form a thin film.
[0009]
According to such a thin film forming method, by supplying the stirring gas toward the source gas supplied into the processing chamber, the source gas is stirred and the stirred source gas is supplied to the surface of the substrate. Therefore, it is possible to uniformly supply the source gas to the surface of the substrate with the distribution of the source gas being more uniform. Therefore, a thin film having a more uniform film thickness can be formed.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the thin film forming apparatus of the present invention will be described in detail with reference to the drawings.
[0011]
<Thin film forming equipment>
FIG. 1 is a schematic configuration diagram for explaining an embodiment of an organic vapor deposition apparatus which is a thin film forming apparatus of the present invention. In the thin film forming apparatus shown in this figure, a mask (not shown) is arranged so as to cover a substrate W in a processing chamber 11 maintained under a reduced pressure atmosphere, and an organic thin film having a predetermined pattern is formed on the substrate W through the mask. The formation is performed.
[0012]
The thin film forming apparatus includes a processing chamber 11 for housing a substrate W on which an organic thin film forming process is performed.
A substrate holder 13 for supporting the substrate W is housed in the processing chamber 11, and the substrate holder 13 has a cooling mechanism (shown in the drawing) capable of controlling the temperature of the substrate W mounted on the substrate mounting surface 13a. (Omitted).
Note that the cooling mechanism here is for adjusting the temperature to an optimum temperature for forming a film on the substrate W, and is not limited to cooling below room temperature.
The substrate holder 13 may be provided with a drive mechanism for rotating or sliding.
[0013]
Here, it is assumed that the substrate holder 13 is disposed, for example, at the bottom in the processing chamber 11, and is disposed with the substrate mounting surface 13a facing upward in the drawing. Here, the substrate holder 13 is arranged with the substrate mounting surface 13a facing upward in the drawing, but the present invention is not limited to this, and the substrate mounting surface 13a is substantially perpendicular to the horizontal state. May be arranged in such a state that
[0014]
The processing chamber 11 is provided with an exhaust system 12, and the inside of the processing chamber 11 is controlled to a predetermined pressure. Although illustration is omitted here, the gas exhausted by the exhaust system 12 passes through a trap to capture an excess material, and a carrier gas and a stirring gas (for example, N ₂ ) Is discharged to the outside of the apparatus, and this exhaust is released to the atmosphere after passing through the scrubber.
[0015]
The processing chamber 11 is provided with a load lock chamber (not shown) for performing an operation of fixing the substrate W to the substrate holder 13. The load lock chamber can be evacuated by a pump and can be freely replaced by an inert gas or the like. The substrate W is fixed to the substrate holder 13 in an inert gas atmosphere, and the pump is evacuated. By opening a gate valve (not shown) between the load lock chamber and the processing chamber 11 under reduced pressure, the substrate holder 13 to which the substrate W is fixed can be arranged and stored in the processing chamber 11 in a predetermined state. is there.
[0016]
Next, the gas supply means 15 for supplying a gas containing a source gas composed of a film forming component (hereinafter, referred to as a source gas G1) and a stirring gas G2 into the processing chamber 11 will be described.
The gas supply unit 15 includes a source gas supply pipe 21 that supplies the source gas G1 into the processing chamber 11, a stirring gas supply pipe 31 that supplies the stirring gas G2 into the processing chamber 11, and a source gas supply pipe 21. The apparatus includes a gas purifier 22 connected thereto, and a raw material supply mechanism 25 provided in a raw gas supply pipe 21 between the processing chamber 11 and the gas purifier 22.
[0017]
One end of the source gas supply pipe 21 is inserted into the processing chamber 11 from the side wall of the processing chamber 11, and the other end of the source gas supply pipe 21 is a high-purity inert gas serving as a carrier gas or a stirring gas G 2. Gas (eg N ₂ , He, and Ar) are connected to a gas purifier 22 (or a cylinder) storing the gas.
Here, an inert gas is used as both the carrier gas and the stirring gas G2. However, the present invention is not limited to this. ₂ It may be.
Further, a gas purifying device 22 may be provided for the carrier gas or the stirring gas G2.
[0018]
A pressure regulator 23, a mass flow controller (MFC) 24, and a raw material supply mechanism 25 are provided in the raw gas supply pipe between the gas purification device 22 and the processing chamber 11 in order from the gas purification device 22 side. Further, a vent line 26 is connected, and a valve V1 is provided between the vent line 26 and the processing chamber 11. It is also assumed that the vent line 26 is also provided with a valve V2.
[0019]
The raw material supply mechanism 25 includes a raw material container 25a in which an organic raw material serving as a raw material of the organic thin film is stored, an introduction pipe 25b branched from the raw gas supply pipe 21 and inserted into the raw material container 25a, and an introduction pipe 25b. Also, a discharge pipe 25c branched from the raw material gas supply pipe 21 on the downstream side and inserted into the raw material container 25a is provided. Valves V3, V4, and V5 are provided on the introduction pipe 25b and the discharge pipe 25c, respectively, between the branch between the introduction pipe 25b and the discharge pipe 25c in the source gas supply pipe 21.
[0020]
In the thin film forming apparatus configured as described above, the pipes, containers, and the like from the MFC 24 to the processing chamber 11 are all controlled to a predetermined high temperature. The heating system for controlling the temperature may be an air oven system installed in an oven, a system for circulating high-temperature oil, an RF (Radio Frequency) heating system (high-frequency induction heating system), or a lamp heating system. There is no particular limitation.
[0021]
On the other hand, one end of a stirring gas supply pipe 31 that supplies the stirring gas G2 into the processing chamber 11 through a line different from the source gas supply pipe 21 is inserted into the processing chamber 11 from the top, for example.
The other end of the stirring gas supply pipe 31 is connected between the pressure regulator 23 and the MFC 24 in the source gas supply pipe 21 and branches off from the source gas supply pipe 21 connected to the gas purification device 22. Shape.
[0022]
The stirring gas supply pipe 31 between the branch point S and the processing chamber 11 is provided with an MFC 32 in order from the branch point S side, a vent line 33 is connected, and a space between the MFC 32 and the vent line 33 is provided. Valves V6 and V7 are provided between the vent line 33 and the processing chamber 11, respectively.
Also, it is assumed that the vent line 33 is also provided with a valve V8.
[0023]
Further, the stirring gas supply pipe 31 in the present embodiment is provided with, for example, a cooling mechanism (not shown) arranged so as to cover the periphery of the stirring gas supply pipe 31. This cooling mechanism controls the temperature of the stirring gas G2 flowing in the stirring gas supply pipe 31 to a temperature suitable for stirring and cooling the raw material gas G1, and is limited to room temperature or lower. Not something.
[0024]
Here, as shown in the main part enlarged view of FIG. 2A, the raw material gas supply pipe 21 inserted from the side wall of the processing chamber 11 is connected to the substrate holder 13 arranged and stored in the processing chamber 11 in a predetermined state. It is arranged so that the source gas G1 is supplied toward the substrate mounting surface 13a.
Specifically, it is assumed that the gas supply port 21a in the source gas supply pipe 21 is arranged so that the source gas G1 is supplied from the side surface side of the substrate W mounted on the substrate mounting surface 13a.
[0025]
Here, the source gas supply pipe 21 of the present embodiment is preferably configured such that the source gas G1 is supplied to the entire surface of the substrate W. For this reason, as shown in FIG. 2B, for example, a plurality of source gas supply pipes 21 are provided so that a plurality of gas supply ports 21a are arranged toward a substrate mounting surface (not shown). I do.
Specifically, as shown in FIG. 1, a plurality of source gas supply pipes 21 provided with a portion from the MFC 24 to the valve V1 are provided between the processing chamber 11 and the gas purification device 22 (or the pressure regulator 23). It is assumed that the configuration is provided.
[0026]
In this case, a plurality of lines of the source gas supply pipe 21 are provided. However, the present invention is not limited to this, and the source gas supply pipe 21 may be provided between the valve V1 and the processing chamber 11 or the processing chamber. It may be a shape that is branched into a plurality inside 11.
[0027]
Further, as shown in FIG. 3, for example, the raw material gas supply pipe 21 may have a shape gradually enlarged toward the gas supply port 21a according to the width of the substrate (not shown).
In this case, it is preferable that a plurality of diffusion walls 41 are provided so that the source gas G1 is sufficiently diffused inside the gradually enlarged supply end 21b.
[0028]
Furthermore, even when the raw material gas G1 was supplied while maintaining its cross-sectional shape from one raw material gas supply pipe 21, the raw material gas G1 was made more uniform by mixing with the stirring gas G2. It can be supplied to the surface of the substrate W in a state.
However, in this case, it is preferable to rotate the substrate mounting surface 13a in FIG. 1 in a horizontal state or to slide the substrate mounting surface 13a in the depth direction or the front direction in the drawing, because the source gas G1 can be supplied more uniformly.
[0029]
On the other hand, as shown in FIG. 2A again, the stirring gas supply pipe 31 inserted from the upper part of the processing chamber 11 is arranged so that the stirring gas G2 is supplied toward the substrate mounting surface 13a. I have.
Specifically, the gas supply port 31a of the stirring gas supply pipe 31 is disposed to face the substrate mounting surface 13a, and the stirring gas G2 is supplied toward the surface of the substrate W mounted on the substrate mounting surface 13a. It is assumed that they are arranged in such a manner.
Here, it is preferable that the stirring gas supply pipe 31 is configured to supply the stirring gas G2 to the entire surface of the substrate W.
Here, it is assumed that the stirring gas supply pipe 31 is configured to have a shape gradually expanded toward the gas supply port 31a, for example.
[0030]
Further, as shown in FIG. 4, a configuration may be employed in which the stirring gas supply pipe 31 is enlarged in one step toward the gas supply port 31a. Although illustration is omitted here, a configuration in which a plurality of stirring gas supply pipes 31 are provided may be employed.
[0031]
<Thin film formation method>
Next, a method of forming an organic thin film using the organic vapor deposition apparatus configured as described above will be described. Here, as an example, a case in which an electron transporting light emitting layer made of Alq3 [tris (8-quinolinolato) aluminu (III)] generally used for an organic EL element is formed will be described.
[0032]
First, as shown in FIG. 1, a substrate W is held and fixed to a substrate holder 13 in a load lock chamber (not shown), and the load lock chamber is evacuated to a reduced pressure atmosphere. The gate between the processing chamber 11 is opened, and the substrate holder 13 is set at a predetermined position in the processing chamber 11.
Then, the inside of the processing chamber 11 is kept at, for example, 133 Pa by the exhaust system 12, and the substrate W is kept at about 20 ° C. by the cooling mechanism provided in the substrate holder 13.
Here, a mask (not shown) is disposed so as to cover the surface of the substrate W and the film is formed. However, the present invention is also applicable to a case where the film is formed over the entire surface of the substrate W without using a mask. Applicable.
[0033]
The raw material container 25a of the raw material supply mechanism 25 stores an organic raw material (here, Alq3) serving as a raw material of the organic thin film, and the organic raw material in the raw material container 25a is kept at a predetermined temperature (280 ° C. in the case of Alq3). Heat to Thus, the vapor pressure of the organic material (Alq3) with respect to the heating temperature is allowed to exist as a gas in the raw material container 25a. In addition, all pipes, containers, and the like from the MFC 24 to the processing chamber 11 are heated at a predetermined high temperature (for example, about 280 ° C.).
[0034]
In the above state, the valves V2 and V3 are closed, and the valves V1, V4 and V5 are opened. Then, the inert gas (for example, N 2) whose pressure is controlled by the pressure regulator 23 to, for example, 0.2 MPa from the gas purification device 22 and whose flow rate is controlled by the MFC 24 with high precision. ₂ ) Is supplied to the source gas supply pipe 21 as a carrier gas. An example of the flow rate is 1000 sccm (standard cc / min: flow rate per minute in a standard state).
[0035]
Then, the carrier gas is supplied to the raw material container 25a, and the gas of the organic raw material (Alq3) vaporized in the raw material container 25a is passed from the raw material gas supply pipe 21 to the processing chamber 11 through the discharge pipe 25c together with the carrier gas. To transport supply.
[0036]
On the other hand, the temperature in the stirring gas supply pipe 31 is set to a temperature lower than the supply temperature of the raw material gas G1, for example, normal temperature, and is supplied from the gas purification device 22 by closing the valves V8 and opening the valves V6 and V7. Inert gas (for example, N ₂ ) Is transported from the stirring gas supply pipe 31 into the processing chamber 11 as the stirring gas G2.
The flow rate and the like of the stirring gas G2 are adjusted and supplied so that the source gas G1 is sufficiently stirred in the processing chamber 11.
[0037]
In this way, as shown in FIG. 2A, the source gas G1 containing the organic source (Alq3) gas is supplied from the gas supply port 21a of the source gas supply pipe 21 inserted from the side wall of the processing chamber 11 to the processing chamber. 11 is supplied along the surface of the substrate W mounted on the substrate mounting surface 13a.
Then, the stirring gas G <b> 2 is supplied toward the surface of the substrate W from the gas supply port 31 a which is inserted from above the processing chamber 11 and is arranged to face the substrate mounting surface 13 a.
[0038]
According to the thin film forming apparatus and the thin film forming method described above, the source gas G1 is supplied along the surface of the substrate W from the gas supply port 21a disposed on the side surface of the substrate W, and the stirring gas G2 is supplied to the substrate W. Is supplied from the gas supply port 31a opposed to the surface of the processing chamber 11, the source gas G1 is stirred in the processing chamber 11, and the distribution of the source gas G1 in the processing chamber 11 is made uniform. As a result, the source gas G1 can be uniformly supplied to the surface of the substrate W, and an organic thin film having a uniform thickness can be formed.
Further, in the present embodiment, the raw material gas G1 supplied along the surface of the substrate W is agitated on the surface of the substrate W by the agitating gas G2, and is pressed by the agitating gas G2. , The source gas G1 can be efficiently supplied to the surface of the substrate W.
[0039]
Further, since a plurality of source gas supply pipes 21 are provided, the gas flow rate can be adjusted by the MFCs 24 provided in each of the source gas supply pipes 21. Therefore, the substrate W can be controlled by controlling the gas flow rate. The distribution of the source gas G1 supplied to each part of the surface can be controlled, and an organic thin film having a more uniform film thickness can be formed.
[0040]
Further, when different source gases G1 are respectively introduced into the plurality of source gas supply pipes 21, the source gases G1 are sequentially supplied from the plurality of gas supply ports 21a into the processing chamber 11, and a plurality of organic thin films are continuously laminated. This makes it possible to form an organic thin film having a uniform film thickness.
However, in this case, a drive mechanism for rotating or sliding the substrate mounting surface 13a is provided on the substrate holder 13, and a more uniform film is obtained by sliding the substrate mounting surface 13a in the depth direction or the front direction in FIG. A thick organic thin film can be formed.
[0041]
Further, according to the present embodiment, the directionality of the flow of the source gas G1 can be dispersed by stirring the source gas G1. For this reason, compared to a case where the flow of the source gas G1 is supplied to the surface of the substrate W with a direction corresponding to the arrangement of the gas supply ports 21a as in a conventional organic vapor deposition apparatus, the flow of the source gas G1 is reduced. The source gas G1 is also supplied to the edge portion of the mask that is difficult to be supplied, so that the shadow effect can be suppressed and the deviation of the film formation pattern can be prevented.
[0042]
Further, in this embodiment, a cooling mechanism is provided in the stirring gas supply pipe 31 that supplies the stirring gas G2 into the processing chamber 11, and the stirring gas G2 is lower in temperature than the source gas G1 in the processing chamber 11. Therefore, by stirring the source gas G1, the temperature of the source gas G1 can be further reduced and the source gas G1 can be supplied to the surface of the substrate W. For this reason, when forming a thermally unstable organic thin film, the source gas G1 can be supplied to the surface of the substrate W without raising the temperature of the surface of the substrate W to the glass transition temperature or higher.
Further, the temperature of the surface of the substrate W can be lowered by the stirring gas G2 supplied directly to the substrate W.
[0043]
Thereby, even when the lower organic thin film is formed on the surface of the substrate W in advance, the high-temperature raw material gas G1 is supplied, so that the lower organic thin film is not deteriorated and the high quality gas is provided on the surface of the substrate W. An organic thin film can be formed.
[0044]
Therefore, when an organic thin film such as an organic EL element is formed by applying such a thin film forming apparatus and a thin film forming method, a high quality organic EL element layer can be formed without uneven brightness even on a large screen.
[0045]
Further, in the present embodiment, the raw material gas G1 is supplied along the surface of the substrate W from the gas supply port 21a disposed on the side surface of the substrate W, and the stirring gas G2 is supplied to the gas supply port disposed opposite to the surface of the substrate W. The example in which the source gas G1 is supplied from 31a has been described, but the present invention is not limited to this. By supplying the stirring gas G2 toward the source gas G1, the source gas G1 is stirred in the processing chamber 11. Any configuration may be used. In particular, it is important that the distribution of the source gas G1 on the surface of the substrate W is made uniform.
[0046]
For example, as shown in FIG. 5, a stirring gas supply pipe 31 having a supply end 31b enlarged in one step toward the gas supply port 31a is inserted from above the processing chamber 11, and the gas supply port 31a is in a horizontal state. May be arranged so as to face the substrate mounting surface 13a arranged at the side, and the source gas supply pipe 21 is inserted from the side wall of the supply end 31b.
Here, for example, it is assumed that the gas supply port 31a is disposed so as to face the entire surface of the substrate W mounted on the substrate mounting surface 13a.
[0047]
With this configuration, the raw material gas G1 is supplied vertically to the stirring gas G2 supplied toward the surface of the substrate W mounted on the substrate mounting surface 13a, and the supply end of the stirring gas supply pipe 31 is supplied. The source gas G1 is agitated by the agitating gas G2 within 31b, so that the distribution of the source gas G1 is made uniform above the substrate W.
In addition, since the distribution of the source gas G1 in the supply end 31b is made uniform, the source gas G1 can be uniformly supplied to the surface of the substrate W from the gas supply port 31a, and the gas supply port 31a is connected to the substrate. Since it is arranged so as to face the entire surface of the W surface, the source gas G1 can be efficiently supplied to the surface of the substrate W.
[0048]
As shown in FIG. 6, for example, a source gas supply pipe 21 having a supply end 21b gradually enlarged toward a gas supply port 21a is inserted from above the processing chamber 11, and the gas supply port 21 is horizontally moved. The gas supply ports 31a of the two agitating gas supply pipes 31 may be disposed so as to be opposed to the substrate mounting surface 13a arranged in a state, and to be disposed on the side wall of the supply end 21b.
Here, for example, it is assumed that the gas supply port 21a is arranged so as to face the entire surface of the substrate W mounted on the substrate mounting surface 13a.
[0049]
According to such a configuration, the stirring gas G2 is supplied obliquely from the supply direction of the raw material gas G1 supplied in the vertical direction in the drawing toward the surface of the substrate W mounted on the substrate mounting surface 13a. Thus, the raw material gas G1 is stirred by the stirring gas G2 in the supply end 21b, and is uniformed.
Further, since the distribution of the source gas is made uniform in the supply end 21b, the source gas G1 can be uniformly supplied from the gas supply port 21a to the surface of the substrate W, and the gas supply port 21a Since it is arranged so as to face the entire surface area, the source gas G1 can be efficiently supplied to the surface of the substrate W.
[0050]
Further, as shown in FIG. 7, the source gas supply pipe 21 is inserted from the side wall of the processing chamber 11, and the gas supply port 21a is disposed on the substrate mounting surface 13a arranged so as to be substantially perpendicular to the horizontal state. The gas supply pipe 31 for stirring may be inserted into the processing chamber 11 from the diagonally upper and lower sides on the same side wall side of the raw gas supply pipe 21 in the drawing.
[0051]
With such a configuration, the raw material gas G1 is agitated by the agitating gas G2 supplied obliquely to the supply direction of the raw material gas G1 supplied from the gas supply port 21a. The distribution of the source gas G1 is made uniform.
Here, the stirring gas G2 is supplied obliquely toward the supply direction of the source gas G1, but since the gas is supplied to the processing chamber 11 from the pipe and diffuses to some extent, the source gas G2 is supplied. If the gas supply port 21a to which G1 is supplied and the gas supply port 31a to which the stirring gas G2 is supplied are provided close to each other, the stirring gas G2 may be supplied from a direction other than the oblique direction. Alternatively, the stirring gas G2 may be supplied in parallel with the supply direction of the raw material gas G1.
[0052]
As described above, even in the thin film forming apparatus having the configuration shown in FIGS. 5 to 7, the raw material gas G1 is stirred by the stirring gas G2 in the processing chamber 11 so that the raw material in the processing chamber 11 is Since the distribution of the gas G1 is made uniform, the source gas G1 can be uniformly supplied to the surface of the substrate W, and the same effects as in the above-described embodiment can be obtained.
[0053]
【The invention's effect】
As described above, according to the thin film forming apparatus of the present invention, since the thin film forming apparatus includes the stirring gas supply pipe that supplies the stirring gas toward the source gas supplied from the source gas supply pipe, By supplying the gas, the source gas is stirred in the processing chamber, and the distribution of the source gas in the processing chamber is made uniform. As a result, the source gas can be uniformly supplied to the substrate surface, and an organic thin film having a more uniform film thickness can be formed.
[0054]
Further, according to the thin film forming method of the present invention, by supplying the stirring gas toward the source gas supplied into the processing chamber, the source gas is stirred, and the stirred source gas is applied to the surface of the substrate. Since the supply is performed, the source gas can be uniformly supplied to the surface of the substrate with the distribution of the source gas being more uniform. Therefore, a thin film having a more uniform film thickness can be formed.
[0055]
Therefore, when an organic thin film such as an organic EL element is formed by applying such a thin film forming apparatus and a thin film forming method, an organic EL element layer without luminance unevenness even on a large screen can be formed.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a thin film forming apparatus according to an embodiment.
FIGS. 2A and 2B are an enlarged view of a main part of a gas supply unit of the thin film forming apparatus according to the embodiment and an enlarged view of a main part of a source gas supply pipe, respectively.
FIG. 3 is an enlarged view of a main part showing an example of a source gas supply pipe in the embodiment.
FIG. 4 is an enlarged view of a main part showing an example of a stirring gas supply pipe in the embodiment.
FIG. 5 is an enlarged view of a main part showing an example of gas supply means in the embodiment (part 1).
FIG. 6 is an enlarged view of a main part showing an example of gas supply means in the embodiment (part 2).
FIG. 7 is an enlarged view of a main part showing an example of gas supply means in the embodiment (part 3).
[Explanation of symbols]
11: Processing chamber, 13: Substrate holder, 13a: Substrate mounting surface, 21: Source gas supply pipe, 31: Gas supply pipe for stirring, W: Substrate, G1: Source gas, G2: Gas for stirring

Claims (7)

A processing chamber;
A substrate holder provided in the processing chamber;
A source gas supply pipe for supplying a source gas composed of a film forming component into the processing chamber;
A thin-film forming apparatus comprising: a stirring gas supply pipe configured to supply a stirring gas into the processing chamber toward the source gas supplied from the source gas supply pipe. 2. The thin film forming apparatus according to claim 1, wherein the source gas supply pipe is arranged so that the source gas is supplied toward a substrate mounting surface of the substrate holder. 2. The thin film forming apparatus according to claim 1, wherein a cooling mechanism is provided in the stirring gas supply pipe. 2. The thin film forming apparatus according to claim 1, wherein the substrate holder is provided with a cooling mechanism for cooling a substrate mounting surface. After storing the substrate in the processing chamber,
By supplying a source gas composed of a film forming component into the processing chamber and supplying a stirring gas toward the source gas supplied into the processing chamber, the source gas was stirred and stirred. A method of forming a thin film, comprising: supplying the source gas to a surface of the substrate to form a thin film. 6. The thin film forming method according to claim 5, wherein the stirring gas is supplied into the processing chamber at a lower temperature than the source gas. 6. The method according to claim 5, wherein the thin film is an organic thin film.

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