JP2004039900A5 - - Google Patents

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Publication number
JP2004039900A5
JP2004039900A5 JP2002195708A JP2002195708A JP2004039900A5 JP 2004039900 A5 JP2004039900 A5 JP 2004039900A5 JP 2002195708 A JP2002195708 A JP 2002195708A JP 2002195708 A JP2002195708 A JP 2002195708A JP 2004039900 A5 JP2004039900 A5 JP 2004039900A5
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JP
Japan
Prior art keywords
upper electrode
electrode cover
hole
plasma
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002195708A
Other languages
English (en)
Japanese (ja)
Other versions
JP3821065B2 (ja
JP2004039900A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002195708A priority Critical patent/JP3821065B2/ja
Priority claimed from JP2002195708A external-priority patent/JP3821065B2/ja
Priority to US10/611,866 priority patent/US20040084146A1/en
Publication of JP2004039900A publication Critical patent/JP2004039900A/ja
Publication of JP2004039900A5 publication Critical patent/JP2004039900A5/ja
Application granted granted Critical
Publication of JP3821065B2 publication Critical patent/JP3821065B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002195708A 2002-07-04 2002-07-04 プラズマ処理装置、上部電極カバー、及び上部電極カバー用窓部 Expired - Fee Related JP3821065B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002195708A JP3821065B2 (ja) 2002-07-04 2002-07-04 プラズマ処理装置、上部電極カバー、及び上部電極カバー用窓部
US10/611,866 US20040084146A1 (en) 2002-07-04 2003-07-03 Plasma treatment apparatus, upper electrode cover, and upper electrode cover window member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002195708A JP3821065B2 (ja) 2002-07-04 2002-07-04 プラズマ処理装置、上部電極カバー、及び上部電極カバー用窓部

Publications (3)

Publication Number Publication Date
JP2004039900A JP2004039900A (ja) 2004-02-05
JP2004039900A5 true JP2004039900A5 (https=) 2005-09-15
JP3821065B2 JP3821065B2 (ja) 2006-09-13

Family

ID=31704005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002195708A Expired - Fee Related JP3821065B2 (ja) 2002-07-04 2002-07-04 プラズマ処理装置、上部電極カバー、及び上部電極カバー用窓部

Country Status (2)

Country Link
US (1) US20040084146A1 (https=)
JP (1) JP3821065B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
DE102010027224A1 (de) * 2010-07-15 2012-01-19 Forschungszentrum Jülich GmbH Elektrode zur Erzeugung eines Plasmas, Plasmakammer mit dieser Elektrode und Verfahren zur in situ-Analyse oder -in situ-Bearbeitung einer Schicht oder des Plasmas
CA3203469A1 (en) * 2015-09-07 2017-03-16 Plasmatica Ltd. Preventing fog on a medical device viewport
US11246480B2 (en) 2015-09-07 2022-02-15 Plasmatica Ltd. Preventing fog on a medical device viewport
US11896204B2 (en) 2015-09-07 2024-02-13 Plasmatica Ltd. Methods and systems for providing plasma treatments to optical surfaces
IL307894A (en) 2021-04-22 2023-12-01 Plasmatica Ltd Methods and systems for providing plasma treatments to optical surfaces
US12125887B2 (en) * 2021-07-16 2024-10-22 Changxin Memory Technologies, Inc. Mounting apparatus and mounting method
CN118541588A (zh) * 2022-10-31 2024-08-23 真实仪器公司 用于半导体工艺的光谱监测的改进光接入

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223617A (ja) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp 半導体基板ウェハの溝形成方法
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
TW323387B (https=) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US6074516A (en) * 1998-06-23 2000-06-13 Lam Research Corporation High sputter, etch resistant window for plasma processing chambers
JP3923212B2 (ja) * 1999-04-15 2007-05-30 東京エレクトロン株式会社 真空処理装置
JP4055880B2 (ja) * 1999-06-02 2008-03-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理監視用窓部材及びプラズマ処理装置用の電極板
KR100545034B1 (ko) * 2000-02-21 2006-01-24 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 시료의 처리방법

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