JP2004031872A - Semiconductor integrated circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of transmitting / receiving a signal to / from the outside of the device at a high speed with the forming area integrated. <P>SOLUTION: An (LSI) chip 4 whose plane is rectangular is placed on the middle bottom of a package main body, a plurality of bonding pads 1, a plurality of light receiving units 5, and a plurality of light emitting units 6 are respectively provided in the peripheral regions of four sides of the chip 4. Each light receiving unit 5 provided in the chip 4 receives light obtained through an optical fiber or the like, photoelectrically converts the light into an electric signal with an electric quantity on the basis of the luminous intensity of light and supplies the electric signal to an internal circuit. On the other hand, each light emitting unit 6 provided in the chip 4 emits light with the luminous intensity determined on the basis of the electric quantity of the electric signal obtained from the internal circuit. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor integrated circuit device capable of transmitting and receiving signals without contact.
[0002]
[Prior art]
2. Description of the Related Art In recent years, LSIs have become multifunctional and highly functional, and have been miniaturized as semiconductor integrated circuit devices capable of performing better performance. When an LSI chip is housed in a package, a wire line connection by wire bonding using a wire bonding technique has been mainly used as a signal transmission means between a pad on the LSI chip side and an electrode on the package side. At this time, a pad area was required to enable bonding.
[0003]
FIG. 20 is a sectional view showing a sectional structure of a semiconductor integrated circuit device realized by a conventional wire bonding connection. FIG. 21 is a plan view showing the plane structure of FIG. A section taken along line AA of FIG. 21 corresponds to FIG.
[0004]
As shown in these figures, a (LSI) chip 54 having a rectangular planar shape is arranged at the lower center of the package body 57a, and a plurality of bonding pads 51 are provided in the peripheral area of four sides of the chip 54.
[0005]
On the other hand, the package body 57a has a middle region 57c on the outer periphery of the arranged chip 54 at a height higher than the arrangement height of the chip 54. A plurality of package-side electrodes 53 are arranged on the middle region 57c. Then, the corresponding bonding pad 51 and the package-side electrode 53 are electrically connected by the wire 52. The wire 52 is provided by an existing wire bonding technique.
[0006]
FIG. 22 is a sectional view showing a sectional structure of a semiconductor integrated circuit device realized by the flip chip method.
[0007]
As shown in the figure, in the flip-chip type semiconductor integrated circuit device, the electrical connection between the bonding pad 51 provided on the back surface of the chip 54 and the package-side electrode 53 provided on the surface of the package body 59a is made by wire wires. It is realized by directly connecting with solder 58 without using 52.
[0008]
In any of the above-described wire integrated system and flip-chip system (hereinafter sometimes abbreviated simply as “bonding (system)”), the bonding pad 51 and the package-side electrode 53 are used. Are electrically connected via electrical connection means such as the wire 52 and the solder 58. However, flip-chip type semiconductor integrated circuit devices are generally considered to have higher reliability than wire-bonded type semiconductor integrated circuit devices.
[0009]
[Problems to be solved by the invention]
However, as the number of signal pins increases due to the multifunctionality and high functionality of the LSI, and the bonding interval is shortened due to miniaturization, the bonding process may become complicated and the reliability of bonding connection may be reduced. In order to perform bonding, it is necessary to provide a pad area on the chip side, and it is technically difficult to reduce the pad area in accordance with the integration of the integrated circuit itself in the LSI chip.
[0010]
In other words, the area of the entire LSI chip is limited by the area occupied by the pad region for bonding, and there is a problem that the formation area of the entire LSI chip is reduced.
[0011]
Also, as the number of signal pins for transmitting and receiving signals to and from the outside increases and the signal pin spacing decreases, signal interference between different signals tends to increase. There have been problems such as susceptibility to interference and reduction in signal propagation speed due to contact wiring resistance.
[0012]
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor integrated circuit device capable of integrating a forming area and transmitting and receiving a high-speed signal to and from the outside of the device.
[0013]
[Means for Solving the Problems]
2. The semiconductor integrated circuit device according to claim 1, wherein an internal circuit formed on the semiconductor substrate, and an optical signal formed in the semiconductor substrate and received from outside the semiconductor substrate is converted into an electric signal and converted into an electric signal. A light-receiving device that transmits light to a circuit; and a light-emitting device that is formed in the semiconductor substrate and generates an optical signal outside the semiconductor substrate based on an electric signal received from the internal circuit.
[0014]
The invention according to claim 2 is the semiconductor integrated circuit device according to claim 1, further comprising a package for housing the semiconductor substrate, wherein the package has a light receiving window through which an optical signal can enter the light receiver. A light emitting window through which an optical signal from the light emitting device can be radiated to the outside.
[0015]
According to a third aspect of the present invention, in the semiconductor integrated circuit device according to the second aspect, the light receiving window includes a window that is arranged only at a specific location where an optical signal can be transmitted to the light receiver.
[0016]
According to a fourth aspect of the present invention, there is provided the semiconductor integrated circuit device according to the second aspect, wherein the light receiving window is provided so as to collect an optical signal from outside the package and irradiate the light receiver with the light signal. The light emitting window includes a light emitting lens provided to collect an optical signal emitted from the light emitting device and irradiate the light to the outside of the package.
[0017]
According to a fifth aspect of the present invention, in the semiconductor integrated circuit device according to any one of the first to fourth aspects, the light receiver receives only the optical signal belonging to a predetermined color range. The optical sensor includes a light sensing unit to be validated, and a photoelectric conversion element that photoelectrically converts the optical signal validated by the light sensing unit.
[0018]
According to a sixth aspect of the present invention, there is provided the semiconductor integrated circuit device according to any one of the first to fourth aspects, wherein the semiconductor substrate has a first and a second layer having a laminated structure. Including, the light receiver includes a light receiving side photoelectric conversion unit that converts an external optical signal into an electric signal, and the light emitting device includes a light emitting side photoelectric conversion unit that converts an electric signal from the internal circuit into an optical signal, The light-receiving side photoelectric conversion unit and the light-emitting side photoelectric conversion unit are formed in the first layer, and the internal circuit is formed in the second layer.
[0019]
The invention according to claim 7 is the semiconductor integrated circuit device according to claim 6, wherein the light-receiving-side photoelectric conversion unit and the light-emitting-side photoelectric conversion unit are formed in the vicinity of the internal circuit and a plan view.
[0020]
Further, the invention according to claim 8 is the semiconductor integrated circuit device according to any one of claims 1 to 4, wherein the internal circuit includes a plurality of internal blocks each operating with a common signal. Including, the photodetector includes a plurality of internal block photodetectors provided corresponding to each of the plurality of internal blocks, the plurality of internal block photodetectors receive the optical signal for the common signal, The optical signal is converted into an electric signal and transmitted to the corresponding internal block as the common signal, and the plurality of photodetectors for the internal block are formed in the vicinity of the internal block and in plan view.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
<Embodiment 1>
FIG. 1 is a perspective view showing a three-dimensional shape of a semiconductor integrated circuit device according to a first embodiment of the present invention. FIG. 2 is a plan view showing a planar structure of the semiconductor integrated circuit device according to the first embodiment. FIG. 3 is a sectional view showing the sectional structure of FIG. FIG. 1 shows a three-dimensional shape before the package lid 7b is provided. 2 corresponds to FIG. 3.
[0022]
As shown in these figures, a (LSI) chip 4 having a rectangular planar shape is arranged at the center bottom of the package body 7a, and a plurality of bonding pads 1, a plurality of light receivers 5, And a plurality of light emitters 6 are provided.
[0023]
On the other hand, the package body 7a has a middle region 7c at a position higher than the arrangement height of the chip 4 on the outer peripheral portion of the arranged chip 4. Then, a plurality of package-side electrodes 3 are arranged on the middle region 7c. Then, the corresponding bonding pad 1 and the package-side electrode 3 are electrically connected by the wire 2. The wire 2 is provided by a wire bonding technique as in the related art.
[0024]
However, as shown in FIG. 2, the electrical connection between the corresponding bonding pad 1 and the package-side electrode 3 is limited to the propagation of limited signals in the power supply system for setting the power supply potential VDD and the ground potential GND. Is going. 1 to 3 show the light receiver 5 and the light emitter 6 protruding from the chip 4 for convenience of explanation, but usually, as described later in detail, the light receiver 5 and the light emitter 6 are What is formed in the chip 4 and can be visually recognized from the surface of the chip 4 is the light receiving surface of the light receiving device 5, the light emitting device 6, and the light emitting surface.
[0025]
FIG. 4 is a perspective view showing a three-dimensional shape of the conductor integrated circuit device according to the first embodiment. However, unlike FIG. 1, FIG. 4 shows a three-dimensional shape after the package lid 7b is provided.
[0026]
As shown in FIGS. 3 and 4, a package lid 7b is provided to cover the entire upper part of the package body 7a, so that the chip 4 is completely housed in the package. A light-receiving / light-emitting window 9 having good light transmittance is provided at the center of the package lid 7b. In addition, as a material having good light transmittance, for example, an acrylic plate, a glass plate, and the like are given.
[0027]
The light receiver 5 provided in the chip 4 receives the light 20 obtained from the optical fiber 8, which is a transmission medium of the optical signal, disposed on the light receiving / emitting window 9, and generates an electric signal based on the light intensity of the light 20. The electric signal is photoelectrically converted into an electric signal and supplied to an internal circuit (not shown) provided on the chip 4. On the other hand, the light emitter 6 provided in the chip 4 can emit light 30 having a light intensity determined based on the amount of electricity of an electric signal obtained from an internal circuit.
[0028]
As described above, the semiconductor integrated circuit according to the first embodiment realizes that the signal propagation of the power supply system is realized by the bonding technique as in the related art, and the signal propagation of the information signal system to the outside of the package body 7a is performed by the optical signal. Device.
[0029]
FIG. 5 is a block diagram illustrating the internal configuration of the light receiver 5. As shown in the figure, light 20 (optical signal) obtained from a light receiving surface 10 provided on the surface of the chip 4 is given to an optical sensor 21.
[0030]
The optical sensor 21 has a color measuring unit 25, a comparing unit 26, and a reference light color setting unit 27. The color measuring section 25 measures the color information of the input optical signal and outputs the measured color information S25 to the comparing section 26. The comparing unit 26 compares the measured color information S25 with the reference light color information S27 defined by the reference light color setting unit 27, and outputs an optical signal only when it is determined that the two coincide with each other. Give to 22. The determination of the match / mismatch by the comparing unit 26 is made based on whether or not the measured color information S25 falls within a predetermined color range based on the reference light color information S27.
[0031]
The optical signal that has passed through the optical sensor 21 is photoelectrically converted by a photoelectric conversion element 22, voltage-amplified by a voltage amplifier circuit 23, and transmitted as an electric signal to an internal circuit of the chip 4. It should be noted that the reference power supply 24 supplies a reference power serving as an operation power of the optical sensor 21, the photoelectric conversion element 22, and the voltage amplifier 23. The voltage amplification circuit 23 is configured using an operational amplifier, a transistor, and the like.
[0032]
FIG. 6 is a block diagram showing the internal configuration of the light emitting device 6. As shown in the figure, a light emitting diode 31 receives an electric signal such as a current from the inside of a chip, emits light with a light intensity based on the electric signal, and emits light 30 via a light emitting surface 11.
[0033]
Note that the constant current source circuit 33 supplies a constant current so that the light emitting diode 31 emits light stably, and the reference power supply source 34 supplies a reference power that is an operation power supply of the light emitting diode 31 and the constant current source circuit 33. .
[0034]
FIG. 7 is a sectional view showing a device structure of the semiconductor integrated circuit device according to the first embodiment. As shown in the figure, the semiconductor substrate 50 of the chip 4 on which the semiconductor integrated circuit device of the first embodiment is formed has a lower layer portion 40 including a lower layer first layer 41 to a lower layer fourth layer 44 and a lower layer portion 40. It has a multilayer structure including an upper layer portion 45 formed thereon. The semiconductor substrate 50 has a light receiving / light emitting device layout area A1 and a logic section layout area A2.
[0035]
In the upper layer portion 45 of the light receiving / light emitting device layout area A1, the light receiving surface 10, the light receiving side photoelectric conversion portion 17 including the optical sensor 21 and the photoelectric conversion element 22 shown in FIG. 5, and the light emitting surface 11 shown in FIG. The light emitting side photoelectric conversion unit 18 including the light emitting diode 31 is formed.
[0036]
In the lower layer portion 40 of the light receiving / light emitting device layout area A1, other components (not shown in FIG. 7) other than the light receiving side photoelectric conversion portion 17 of the light receiving device 5 including the voltage amplifier circuit 23 and the reference power supply source 24 are included. Then, other components (not shown in FIG. 7) other than the light emitting side photoelectric conversion unit 18 of the light emitting device 6 including the constant current source circuit 33 and the reference power supply source 34 are formed.
[0037]
On the other hand, a logic section (not shown in FIG. 7) serving as an internal circuit is formed in the logic section layout area A2. The light receiver and the light emitting device formed in the light receiving / light emitting device layout area A1 are electrically connected to the logic part formed in the logic part layout area A2 via the layout wiring 12 formed in the lower layer part 40. You.
[0038]
FIG. 8 is a cross-sectional view illustrating a configuration example of the light-receiving-side photoelectric conversion unit 17. As shown in the figure, the light-receiving-side photoelectric conversion unit 17 is formed by stacking the photodiode 36, the color filter 35, and the light-receiving surface 10 in this order, and an insulating layer 37 is formed to cover them. In this configuration example, the color filter 35 has a predetermined spectral transmission characteristic, and has a function equivalent to that of the optical sensor 21 by transmitting only a predetermined color. The photodiode 36 functions as the photoelectric conversion unit 22.
[0039]
FIG. 9 is a cross-sectional view illustrating a configuration example of the light-emitting side photoelectric conversion unit 18. As shown in the figure, the light-emitting side photoelectric conversion unit 18 is formed by stacking the light-emitting diode 31 and the light-emitting surface 11 in this order, and an insulating layer 38 is formed to cover them.
[0040]
In the semiconductor integrated circuit device according to the first embodiment configured as described above, the light receiver 5 and the light emitter 6 are formed in the surface of the semiconductor substrate 50 so as to be capable of transmitting and receiving optical signals. Signals can be transmitted and received by signals.
[0041]
Since the transmission and reception of the optical signal is a non-contact signal propagation without using an electrical connection means such as a wire, a high-speed signal propagation with a minimum signal propagation delay with the outside can be realized. In addition, since it is non-contact, there is no wiring resistance, and it is not affected by noise due to signal interference or external electromagnetic waves.
[0042]
Furthermore, the pad area which requires a relatively large formation area for bonding is not required, so that the area of the entire chip can be reduced and the degree of integration can be improved. In addition, since the bonding step can be omitted, an improvement in the yield of the device can be expected.
[0043]
In addition, in the semiconductor integrated circuit device according to the first embodiment, by providing the optical sensor 21 having a color identification function, by irradiating optical signals of different colors as different types of signals by the adjacent optical fibers 8, the optical signal It is possible to transmit and receive an optical signal while reliably avoiding the incident collision. That is, by unifying the combination of the incident light and the color of the detection range on the light receiving side, it is possible to efficiently and accurately receive an optical signal without signal loss.
[0044]
In general, the light intensity is changed by changing the light intensity of the optical signal supplied from the optical fiber 8. However, the light intensity of the optical signal supplied from the optical fiber 8 is kept constant, and the light receiving / emitting window of the optical fiber 8 is changed. It is also conceivable to change the height above the ninth. Further, instead of the light intensity, information may be transmitted as a wavelength of an optical signal, a light blinking interval, or the like.
[0045]
<Embodiment 2>
FIG. 10 is a sectional view showing a sectional structure of a semiconductor integrated circuit device according to a second embodiment of the present invention. FIG. 11 is a perspective view showing a three-dimensional shape of the semiconductor integrated circuit device according to the second embodiment. FIG. 11 shows a three-dimensional shape after the package lid 7b is provided.
[0046]
As shown in these figures, a plurality of light receiving / light emitting windows 19 are provided at specific locations on the package lid 7b. Then, the light receiver 5 or the light emitter 6 is arranged so as to be located immediately below each light receiving / light emitting window 19.
[0047]
Therefore, by arranging the optical fiber 8 for light transmission on each light receiving window 19, it is possible to effectively suppress the influence of the incidence of light irrelevant to the original optical signal such as natural light.
[0048]
The light-receiving / light-emitting window 19 is made of a material having high transparency. Other configurations are the same as those of the first embodiment. In FIG. 10, for convenience of explanation, the light receiver 5 and the light emitter 6 are shown projecting from the chip 4. However, the light receiver 5 and the light emitter 6 are usually formed in the chip 4 as described above. The light receiving surface 10, light emitting device 6, and light emitting surface 11 of the light receiving device 5 can be visually recognized from the surface of the chip 4.
[0049]
As described above, the semiconductor integrated circuit device according to the second embodiment has the effect of the first embodiment and the stable light signal transmission by arranging the light-receiving / light-emitting window 19, which is the optical signal supply location, only at a specific location. This has the effect of enabling reception.
[0050]
In the second embodiment, the signal output may be performed by a bonding wire without providing the light emitting device 6.
[0051]
<Embodiment 3>
FIG. 12 is a sectional view showing a sectional structure of a semiconductor integrated circuit device according to a third embodiment of the present invention. FIG. 13 is a perspective view showing a three-dimensional shape of the semiconductor integrated circuit device according to the third embodiment. FIG. 13 shows a three-dimensional shape after the package lid 7b is provided.
[0052]
As shown in these drawings, a plurality of light-receiving lenses 13 and light-emitting lenses 14 are provided at specific locations on the package lid 7b. The light receiver 5 is arranged so as to be located directly below each light receiving lens 13, and the light emitter 6 is arranged so as to be located immediately below each light emitting lens 14. Other configurations are the same as those in the first embodiment. In FIG. 12, for convenience of explanation, the light receiver 5 and the light emitter 6 are shown protruding from the chip 4, but the light receiver 5 and the light emitter 6 are usually formed in the chip 4 as described above. What can be visually recognized from the surface of the chip 4 is the light receiving surface 10, light emitting device 6, and light emitting surface 11 of the light receiving device 5.
[0053]
FIG. 14 is an explanatory diagram showing details of the light receiving lens 13. As shown in the figure, the light 20 is condensed by the light receiving lens 13 and is incident on the light receiving surface 10, whereby the light sensitivity of the light receiving surface 10 can be improved.
[0054]
FIG. 15 is an explanatory diagram showing details of the light emitting lens 14. As shown in the figure, the light 32 obtained through the light emitting surface 11 by the light emitting lens 14 is emitted to the outside as the light 30 condensed by the light emitting lens 14, thereby reducing the light sensitivity of the external light receiving unit. Improvement can be achieved.
[0055]
As described above, in the semiconductor integrated circuit device according to the third embodiment, by providing the light receiving lens 13 and the light emitting lens 14 at the optical signal supply location, in addition to the effects of the first and second embodiments, There is an effect that transmission and reception can be performed with higher stability.
[0056]
In the third embodiment, signal output may be performed by a bonding wire without providing the light emitting device 6.
[0057]
Further, a polarizing plate may be used instead of the light receiving lens 13 and the light emitting lens 14. The polarizing plate has a property of transmitting only light that vibrates in a certain direction, and the transmitted light vibrates only in one specific direction, so that transmission and reception of an optical signal can be stabilized. In addition, it has a characteristic superior to a lens in that the brightness does not change even if the light incident position is slightly shifted.
[0058]
<Embodiment 4>
FIG. 16 is a block diagram showing an internal configuration of a light receiver of the semiconductor integrated circuit device according to the fourth embodiment of the present invention. As shown in the figure, the fourth embodiment is characterized in that a phototransistor 28 is provided in place of the optical sensor 21 and the photoelectric conversion unit 22. The other configuration of the light receiver is the same as the configuration shown in FIG.
[0059]
The phototransistor 28 performs photoelectric conversion based on the brightness (light intensity) of the light 20, and the electric signal is amplified by the voltage amplifier circuit 23. Therefore, the light receiving side photoelectric conversion portion 17 formed in the upper layer portion 45 of FIG. 7 corresponds to the light receiving surface 10 and the phototransistor 28.
[0060]
In the fourth embodiment, an optical signal supply location is specified by using the light receiving / light emitting window 19 of the second embodiment or the light receiving lens 13 and the light emitting lens 14 of the third embodiment. desirable.
[0061]
<Embodiment 5>
FIG. 17 is a perspective view showing a three-dimensional shape of the semiconductor integrated circuit device according to the fifth embodiment of the present invention. FIG. 18 is a plan view showing a planar structure of the semiconductor integrated circuit device according to the fifth embodiment. FIG. 17 shows a three-dimensional shape before the package lid 7b is provided.
[0062]
As shown in these drawings, the light receiving device 5 (including the light receiving side photoelectric conversion unit 17) and the light emitting device 6 (including the light emitting side photoelectric conversion unit 18) are dispersedly arranged in the center of the chip 4, and Reference numeral 5 is used as a signal input unit of an internal block 15 constituting an internal logic circuit. That is, the light receiving side photoelectric conversion portion 17 of the light receiver 5 is formed in the upper layer portion 45 of the logic portion layout area A2 in FIG. 7, and other components and the internal block 15 of the light receiver 5 are formed in the lower layer portion 40 therebelow. Will be done.
[0063]
As described above, although the light receiving side photoelectric conversion unit 17 and the light emitting side photoelectric conversion unit 18 and the internal block 15 are different in the formation layer, the positional relationship in a plan view (see FIG. 18) is close. That is, the light-receiving-side photoelectric conversion unit 17 and the light-emitting-side photoelectric conversion unit 18 are formed in the inner block 15 and in the vicinity region in plan view.
[0064]
As described above, the light receiving device 5 and the light emitting device 6 are formed in the chip 4, and the light receiving surface 10, the light emitting device 6, and the light emitting surface 11 of the light receiving device 5 can be visually recognized from the surface of the chip 4.
[0065]
As described above, in the fifth embodiment, by arranging the photodetector 5 near the internal block 15 formed in the center of the chip 4, electrical connection with the internal block 15 can be performed by the relatively short layout wiring 12. High-speed signal transmission from the outside of the device to the internal block 15 becomes possible.
[0066]
As described above, in the semiconductor integrated circuit device of the fifth embodiment, by providing the photodetector 5 in the internal logic formation region, the wiring length of the layout wiring 12 between the photodetector 5 and the internal block 15 can be reduced. High-speed signal transmission is realized.
[0067]
At this time, the provision of the light receiver 5 capable of color selection by the optical sensor 21 shown in FIG. 5 enables the reception of the optical signal in which the incident collision of the optical signal is reliably avoided.
[0068]
<Embodiment 6>
FIG. 19 is a plan view showing a planar structure of the semiconductor integrated circuit device according to the sixth embodiment. In this embodiment, the light receiver 5 is used for clock input.
[0069]
As shown in the figure, in the sixth embodiment, as in the fifth embodiment, the light receiver 5 is formed in the center of the chip 4 and is arranged near the internal blocks 15 (15A to 15D) provided in block units. Is done. The internal block 15 has one or two clock meshes 16 (16a, 16b) inside, and the photodetector 5 provided near and corresponding to one clock mesh 16 is electrically connected. That is, the light receiving side photoelectric conversion portion of the light receiver 5 is formed in the upper layer portion 45 of the logic portion layout area A2 in FIG. 7, and the other components of the light receiver 5 and the clock mesh 16 in the lower layer portion 40 therebelow. Block 15 will be formed. Therefore, the photodetector 5 for the internal block (the clock mesh therein) is formed in the vicinity of the corresponding internal block 15 in plan view.
[0070]
The clock mesh means a wiring for transmitting a clock signal. Further, as described above, the light receiver 5 is formed in the chip 4, and the light receiving surface 10 of the light receiver 5 can be visually recognized from the surface of the chip 4. Further, for convenience of explanation, the clock supply method is the mesh method, but other supply methods (tree method or the like) can be equally used.
[0071]
Each light receiver 5 receives a clock as an optical signal, and supplies an electric signal obtained by photoelectric conversion to a corresponding clock mesh 16. There are two types of clocks, a first clock for the clock mesh 16a and a second clock for the clock mesh 16b. For example, the internal block 15A has two types of clock meshes 16a and 16b. In this configuration, the clock mesh 16a receives the first clock supplied from the two photodetectors 5, and the clock mesh 16b receives 1 clock. The second clock is supplied from the two light receivers 5.
[0072]
As described above, in the sixth embodiment, by arranging the photodetector 5 in the vicinity of the corresponding clock mesh 16, the electrical connection with the clock mesh 16 can be made by the layout wiring 12 which is relatively short. , A high-speed clock supply becomes possible.
[0073]
As described above, in the semiconductor integrated circuit device according to the sixth embodiment, by providing the photodetector 5 in the vicinity of each clock mesh 16, the wiring by the clock trunk line required for the existing clock supply using the wiring is provided. Is unnecessary, so that high-speed clock supply is possible. In addition, since wiring is not required, wiring delay is suppressed, and clock skew can be reduced. Here, the clock skew means how much the clock timing is shifted due to a difference in a place where a clock is transmitted or a route.
[0074]
In the sixth embodiment, an example in which the transmission of a clock as a common signal between the internal blocks 15 is performed by an optical signal has been described, but in addition to the clock, a signal to be supplied to the entire circuit in the chip, such as a reset signal and a standby signal, is also provided. The common signal may be given as an optical signal.
[0075]
【The invention's effect】
As described above, in the semiconductor integrated circuit device according to the first aspect of the present invention, since the light receiving device and the light emitting device are formed in the semiconductor substrate, transmission and reception with the outside can be performed by the optical signal. A semiconductor integrated circuit device having a one-chip configuration capable of transmitting and receiving a high-speed signal to and from the outside without being affected by noise due to interference or an external electromagnetic wave can be obtained.
[0076]
In addition, since a pad region used for bonding connection with an external electrode is not required, the degree of integration can be improved.
[0077]
According to the semiconductor integrated circuit device of the second aspect, it is possible to obtain a packaged device capable of performing transmission and reception with the outside by an optical signal.
[0078]
4. The semiconductor integrated circuit device according to claim 3, wherein the light receiving window is disposed only at a specific location where the optical signal can be transmitted to the light receiving device, so that light having no relation to the original optical signal such as natural light can be prevented. Can be suppressed.
[0079]
In the semiconductor integrated circuit device according to the fourth aspect, by using the light receiving and light emitting lenses, the reception sensitivity of the optical signal can be improved.
[0080]
In the semiconductor integrated circuit device according to the fifth aspect, the plurality of types of signals can be classified by color by specifying the color range of the optical signal by the optical sensing unit, and the incident collision of the plurality of types of optical signals can be reliably performed. It is possible to receive the avoided optical signal.
[0081]
In the semiconductor integrated circuit device according to claim 6, by forming the light receiving side and light emitting side photoelectric conversion units and the internal circuit in a laminated structure, the formation of the light receiving side and light emitting side photoelectric conversion units does not impair the degree of integration. Absent.
[0082]
In the semiconductor integrated circuit device according to the seventh aspect, since the light-receiving-side photoelectric conversion unit and the light-emitting-side photoelectric conversion unit are formed in the vicinity of the internal circuit in plan view, the wiring for electrically connecting the two can be reduced. Thus, higher speed signal transmission / reception becomes possible.
[0083]
9. The semiconductor integrated circuit device according to claim 8, wherein the plurality of internal blocks can receive a common signal independently from the corresponding internal block photodetector formed in the vicinity area in plan view. Efficient signal transmission to a plurality of internal blocks of the signal becomes possible.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a three-dimensional shape of a semiconductor integrated circuit device according to a first embodiment of the present invention;
FIG. 2 is a plan view showing a planar structure of the semiconductor integrated circuit device according to the first embodiment;
FIG. 3 is a sectional view showing a sectional structure of FIG. 2;
FIG. 4 is a perspective view showing a three-dimensional shape of the semiconductor integrated circuit device according to the first embodiment of the present invention;
FIG. 5 is a block diagram illustrating an internal configuration of a light receiver.
FIG. 6 is a block diagram showing an internal configuration of the light emitting device.
FIG. 7 is a sectional view showing a multilayer structure of the semiconductor integrated circuit device according to the first embodiment;
FIG. 8 is a cross-sectional view illustrating a configuration example of a light-receiving-side photoelectric conversion unit.
FIG. 9 is a cross-sectional view illustrating a configuration example of a light-emitting side photoelectric conversion unit.
FIG. 10 is a sectional view showing a sectional structure of a semiconductor integrated circuit device according to a second embodiment;
FIG. 11 is a perspective view showing a three-dimensional shape of the semiconductor integrated circuit device according to the second embodiment;
FIG. 12 is a sectional view showing a sectional structure of a semiconductor integrated circuit device according to a third embodiment;
FIG. 13 is a perspective view showing a three-dimensional shape of the semiconductor integrated circuit device according to the third embodiment;
FIG. 14 is an explanatory diagram showing details of a light receiving lens.
FIG. 15 is an explanatory diagram showing details of a light-emitting lens.
FIG. 16 is a block diagram showing an internal configuration of a light receiver of a semiconductor integrated circuit device according to a fourth embodiment.
FIG. 17 is a perspective view showing a three-dimensional shape of a semiconductor integrated circuit device according to a fifth embodiment;
FIG. 18 is a plan view showing a planar structure of a semiconductor integrated circuit device according to a fifth embodiment.
FIG. 19 is a plan view showing a planar structure of a semiconductor integrated circuit device according to a sixth embodiment.
FIG. 20 is a cross-sectional view showing a cross-sectional structure of a semiconductor integrated circuit device realized by a conventional wire bonding connection.
21A and 21B are a sectional view and a plan view showing the planar structure of FIG.
FIG. 22 is a cross-sectional view showing a cross-sectional structure of a semiconductor integrated circuit device realized by a flip chip method.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Bonding pad, 2 wires, 3 package side electrodes, 4 chips, 5 light receivers, 6 light emitters, 7a package body, 7b package lid, 8 optical fibers, 9, 19 light receiving / light emitting windows, 13 light receiving lenses, 14 light emitting Lens, 15, 15A to 15D internal block, 16a, 16b clock mesh, 17 light-receiving-side photoelectric conversion unit, 18 light-emitting-side photoelectric conversion unit, 21 optical sensor, 22 photoelectric conversion unit, 23 voltage amplifier circuit, 28 phototransistor.

Claims (8)

An internal circuit formed on the semiconductor substrate,
A light receiver formed in the semiconductor substrate and converting an optical signal received from outside the semiconductor substrate into an electric signal and transmitting the electric signal to the internal circuit,
A light emitter that is formed in the semiconductor substrate and generates an optical signal outside the semiconductor substrate based on an electric signal received from the internal circuit,
A semiconductor integrated circuit device comprising: The semiconductor integrated circuit device according to claim 1,
A package for accommodating the semiconductor substrate;
The package has a light-receiving window through which an optical signal can be incident on the light-receiving device, and a light-emitting window through which an optical signal from the light-emitting device can be emitted to the outside.
Semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 2, wherein
The light-receiving window includes a window that is arranged only at a specific location capable of transmitting an optical signal to the light-receiving device,
Semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 2, wherein
The light-receiving window includes a light-receiving lens provided so as to collect an optical signal from the outside of the package and irradiate the light-receiving device,
The light-emitting window includes a light-emitting lens provided so as to collect an optical signal emitted from the light-emitting device and irradiate the light to the outside of the package.
Semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 1, wherein:
The light receiver,
An optical sensing unit that enables only the optical signal belonging to a predetermined color range;
Including a photoelectric conversion element that performs photoelectric conversion of the optical signal that is enabled by the light sensing unit,
Semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 1, wherein:
The semiconductor substrate includes first and second layers having a stacked structure,
The light receiver includes a light receiving side photoelectric conversion unit that converts an optical signal from the outside into an electric signal,
The light emitting device includes a light emitting side photoelectric conversion unit that converts an electric signal from the internal circuit into an optical signal,
The light-receiving side photoelectric conversion unit and the light-emitting side photoelectric conversion unit are formed in the first layer,
The internal circuit is formed in the second layer;
Semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 6, wherein
The light-receiving-side photoelectric conversion unit and the light-emitting-side photoelectric conversion unit are formed in the internal circuit and the vicinity region in plan view,
Semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 1, wherein:
The internal circuit includes a plurality of internal blocks each operating on a common signal,
The photodetector includes a plurality of internal block photodetectors provided corresponding to each of the plurality of internal blocks,
The plurality of internal block photodetectors receive the optical signal for the common signal, convert the optical signal into an electrical signal, and transmit the electrical signal to the corresponding internal block as the common signal,
The plurality of internal block photodetectors are formed in the internal block and the vicinity area in plan view,
Semiconductor integrated circuit device.

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