JP2004006886A5 - - Google Patents

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Publication number
JP2004006886A5
JP2004006886A5 JP2003148359A JP2003148359A JP2004006886A5 JP 2004006886 A5 JP2004006886 A5 JP 2004006886A5 JP 2003148359 A JP2003148359 A JP 2003148359A JP 2003148359 A JP2003148359 A JP 2003148359A JP 2004006886 A5 JP2004006886 A5 JP 2004006886A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003148359A
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Japanese (ja)
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JP4314887B2 (ja
JP2004006886A (ja
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Priority to JP2003148359A priority Critical patent/JP4314887B2/ja
Priority claimed from JP2003148359A external-priority patent/JP4314887B2/ja
Publication of JP2004006886A publication Critical patent/JP2004006886A/ja
Publication of JP2004006886A5 publication Critical patent/JP2004006886A5/ja
Application granted granted Critical
Publication of JP4314887B2 publication Critical patent/JP4314887B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003148359A 1997-11-26 2003-05-26 窒化物半導体素子 Expired - Lifetime JP4314887B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003148359A JP4314887B2 (ja) 1997-11-26 2003-05-26 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32499797 1997-11-26
JP2003148359A JP4314887B2 (ja) 1997-11-26 2003-05-26 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13283198A Division JP3456413B2 (ja) 1997-11-26 1998-05-15 窒化物半導体の成長方法及び窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2004006886A JP2004006886A (ja) 2004-01-08
JP2004006886A5 true JP2004006886A5 (enrdf_load_stackoverflow) 2005-09-22
JP4314887B2 JP4314887B2 (ja) 2009-08-19

Family

ID=30445545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003148359A Expired - Lifetime JP4314887B2 (ja) 1997-11-26 2003-05-26 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4314887B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100533794C (zh) * 2003-02-07 2009-08-26 三洋电机株式会社 半导体元件
CN117401997B (zh) * 2023-11-01 2024-09-20 郑州宏拓精密工具有限公司 一种光伏籽晶掏刀及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3974667B2 (ja) * 1994-08-22 2007-09-12 ローム株式会社 半導体発光素子の製法
JP2828002B2 (ja) * 1995-01-19 1998-11-25 松下電器産業株式会社 半導体発光素子およびその製造方法
EP0852416B1 (en) * 1995-09-18 2002-07-10 Hitachi, Ltd. Semiconductor material, method of producing the semiconductor material, and semiconductor device
JP3350855B2 (ja) * 1995-10-16 2002-11-25 日本電信電話株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JPH1143398A (ja) * 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
JP3925753B2 (ja) * 1997-10-24 2007-06-06 ソニー株式会社 半導体素子およびその製造方法ならびに半導体発光素子
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子

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