JP2004006356A - Vacuum processing device and vacuum treatment method - Google Patents

Vacuum processing device and vacuum treatment method Download PDF

Info

Publication number
JP2004006356A
JP2004006356A JP2003138847A JP2003138847A JP2004006356A JP 2004006356 A JP2004006356 A JP 2004006356A JP 2003138847 A JP2003138847 A JP 2003138847A JP 2003138847 A JP2003138847 A JP 2003138847A JP 2004006356 A JP2004006356 A JP 2004006356A
Authority
JP
Japan
Prior art keywords
closed chamber
base member
inner lid
electrode
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003138847A
Other languages
Japanese (ja)
Inventor
Hiroshi Haji
土師 宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2003138847A priority Critical patent/JP2004006356A/en
Publication of JP2004006356A publication Critical patent/JP2004006356A/en
Pending legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum treatment device and a vacuum treatment method in which the time for a pressure reduction and an atmospheric air introduction can be shortened, and treatment efficiency and quality can be improved. <P>SOLUTION: In the upper direction of a first electrode 4 installed on a base member 3 and mounting a substrate 7 on the upper face, an external lid 10 having a recessed part 10a opened at the first electrode 4 side is installed in free lifting, and an inner lid 11 which is a second electrode vertically moving in the recessed part 10 is provided. Under a state in which the external lid 10 is airtightly abutted on the base member 3, a first closed chamber surrounded by the recessed part 10a and the first electrode 4 is made a plasma treatment space, and a vacuum pump 33 and an atmospheric vent device 34 are connected to a second closed chamber formed between the internal lid 11 closing the recessed part 10 and the first electrode 4 under the state in which the external lid 10 is abutted on the base member 3. By this, only the second closed chamber having a small volume is made the object at the reduced pressure and the atmospheric air introduction, and the time for the pressure reduction and the atmospheric air introduction can be shortened. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、基板などのワークを真空処理する真空処理装置に関するものである。
【0002】
【従来の技術】
プラズマ処理など、減圧下で行われる処理のための装置である真空処理装置では、ベース部材と蓋部材を組み合わせて密閉空間が形成される。処理対象物であるワークはこの密閉空間内に載置され、密閉空間は真空ポンプなどの減圧手段によって減圧される。そして真空処理の終了後には密閉空間内に再び大気を導入し常圧に戻す真空破壊が行われる。
【0003】
【発明が解決しようとする課題】
上記減圧過程では、密閉空間を所定の真空度まで減圧するために所定の減圧時間を要する。この減圧時間は一般に数十秒のオーダーであり、この時間は電子部品の製造工程や実装工程のタクトタイムと比較すると相当長いものである。このため、生産性向上のため、この減圧時間や前述の大気導入に要する時間を短縮することが従来より求められていた。
【0004】
しかしながら従来の真空処理装置では、減圧時間を短縮しようとすれば大容量の真空ポンプを使用する必要があり、これにより装置の大型化や設備費用のアップを招き、更には大容量の真空ポンプからは大量のオイルミストが排出されるため、装置周囲の空気を汚染するという問題点があった。
【0005】
また、真空処理としてプラズマ処理を行う場合にはワークの品種によって最適の電極間距離が存在する。しかしながら従来の真空処理装置では電極間距離が固定されていたため、個々のワークについては必ずしも最適条件下での処理を行うことができず、処理効率や品質の向上を妨げるという問題点もあった。
【0006】
そこで本発明は、減圧時および大気導入時に要する時間を短縮することができ、処理効率や品質を向上させることができる真空処理装置を提供することを目的とする。
【0007】
【課題を解決するための手段】
請求項1記載の真空処理装置は、ベース部材と、このベース部材に装着され、ワークを載置する載置部を備えた第1の電極と、前記第1の電極側に開口した凹部を有し、前記ベース部材に密着することにより前記凹部と前記載置部とに囲まれる第1の密閉室を形成する外蓋と、前記外蓋を前記ベース部材に接離させる第1の駆動手段と、前記凹部内に上下動自在に配置された第2の電極であって前記凹部を密閉して第3の密閉室を形成する中蓋と、前記外蓋を前記ベース部材に気密に当接させた状態で前記凹部を密閉した中蓋と前記載置部との間に形成される第2の密閉室に接続され、この第2の密閉室内の空気を排気して減圧する減圧手段と、前記第2の密閉室を大気圧に戻す大気ベント装置と、前記中蓋を上昇させることにより前記第2の気密室と前記第3の気密室を連結して前記第1の密閉室とすると共に前記中蓋を前記プラズマ処理に適した電極間距離となる高さまで上昇させる第2の駆動手段と、前記第1の密閉室にプラズマ発生用ガスを供給するガス供給装置と、前記第1の電極に高周波電圧を印加する高周波電源部を備えた。
【0008】
請求項2記載の真空処理装置は、請求項1記載の真空処理装置であって、前記中蓋が前記凹部を密閉した状態で前記外蓋を前記ベース部材より離反させ、この状態で載置部上のワークの搬入・搬出を行なう。
【0009】
請求項3記載の真空処理装置は、請求項1記載の真空処理装置であって、前記凹部の内側に張り出した当接部に前記中蓋を当接させて前記第3の密閉室を形成する。
【0010】
請求項4記載の真空処理装置は、請求項3記載の真空処理装置であって、前記中蓋が前記当接部から離れないようにするストッパを備えた。
【0011】
請求項5記載の真空処理方法は、ベース部材と、このベース部材に装着され、ワークを載置する載置部を備えた第1の電極と、前記第1の電極側に開口した凹部を有し、前記ベース部材に密着することにより前記凹部と前記載置部とに囲まれる第1の密閉室を形成する外蓋と、前記凹部内に上下動自在に配置された第2の電極であって前記凹部を密閉して第3の密閉室を形成する中蓋を備えた真空処理装置における真空処理方法であって、前記載置部にワークを載置する第1工程と、前記外蓋を前記ベース部材に気密に当接させて前記ワークを収容する第1の密閉室を形成する第2工程と、前記第1の密閉室の空気を排気して減圧を行う第3工程と、前記減圧された密閉空間内にプラズマ発生用ガスを供給してプラズマを発生させる第4工程と、前記中蓋を下降させて前記凹部を密閉することにより前記第1の密閉室を、前記第1の電極と中蓋の間の空間であってワークを収容した第2の密閉室と前記中蓋と前記凹部に囲まれた第3の密閉室とに分割する第5工程と、前記第2の密閉室を大気圧に戻す第6工程と、前記中蓋で前記凹部を密閉した状態で前記外蓋を前記ベース部材から離す第7工程と、前記載置部からワークを取り出し次のワークをこの載置部に載置する第8工程と、前記外蓋を前記ベース部材に当接させて次のワークを収容した第2の密閉室を形成する第9工程と、前記第2の密閉室の空気を排気して減圧を行う第10工程と、前記中蓋による前記凹部の密閉状態を解除して前記第2の密閉室と第3の密閉室を連結して第1の密閉室とすると共に前記中蓋をプラズマ放電に適した電極間距離となる高さまで上昇させる第11工程とを含む。
【0012】
請求項6記載の真空処理方法は、ベース部材と、このベース部材に装着され、ワークを載置する載置部を備えた第1の電極と、前記第1の電極側に開口した凹部を有し、前記ベース部材に密着することにより前記凹部と前記載置部とに囲まれる第1の密閉室を形成する外蓋と、前記凹部内に上下動自在に配置された第2の電極であって前記凹部を密閉して第3の密閉室を形成する中蓋を備えた真空処理装置における真空処理方法であって、ワークを前記載置部に載置する工程と、前記中蓋によって前記凹部を密閉して形成された第3の密閉室を真空状態に保った状態で前記外蓋を前記ベース部材に当接させてこの中蓋の下方に次にワークを収容した第2の密閉室を形成する工程と、前記第2の密閉室の空気を排気して減圧を行う工程と、前記中蓋による前記凹部の密閉状態を解除して前記第2の密閉室と第3の密閉室を連結して第1の密閉室とすると共に前記中蓋をプラズマ放電に適した電極間距離となる高さまで上昇させる工程と、減圧された前記第1の密閉室にプラズマ発生用ガスを供給してプラズマを発生させる工程とを含む。
【0013】
【発明の実施の形態】
次に本発明の実施の形態を図面を参照して説明する。図1は本発明の一実施の形態における真空処理装置の断面図、図2、図3、図4、図5、図6、図7、図8は本発明の一実施の形態における真空処理装置の部分断面図である。
【0014】
まず図1を参照して真空処理装置の構造を説明する。図1において基台1上にはフレーム2が立設されている。フレーム2の上端部にはベース部材3が水平に固着されており、ベース部材3の下面には絶縁部材5を介して電極4がボルト6によって装着されている。ボルト6と電極4の間には絶縁体から成る座金6aが装着されている。絶縁部材5とベース部材3および絶縁部材5と第1の電極4とのそれぞれの当接面は、シール部材18(図2)によって気密が確保されている。第1の電極4の上部はベース部材3に設けられた開口部3a(図2参照)内に嵌入している。第1の電極4の上面はワークである基板7を載置する載置部となっており、第1の電極4は高周波電源部16に接続されている。高周波電源部16を駆動することにより、第1の電極4には高周波電圧が印加される。
【0015】
ベース部材3の上面には外蓋10が当接している。外蓋10はブラケット13に固着されており、ブラケット13は第1の駆動手段であるシリンダ14のロッド15と結合されている。シリンダ14を上下駆動することにより外蓋10は上下動し、ベース部材3に対して接離する。外蓋10の内部には電極4側に開口した凹部10aが設けられており、凹部10a内には水平な中蓋11がロッド12によって上下動自在に配設されている。外蓋10の上面には第2の駆動手段である中蓋11の上下駆動機構部20が設けられており、モータ21を回転駆動することにより、ロッド12を介して中蓋11は凹部10a内で上下方向に移動する。
【0016】
次に図2および図4を参照して外蓋10、中蓋11によって構成される真空処理用の密閉室および中蓋11の上下駆動機構20について説明する。図4において、外蓋10に設けられた凹部10aは第1の電極4側に開口しており、この凹部10aと第1の電極4の上面とで囲まれる空間は第1の密閉室8となっている。一方、図2において凹部10aの下部には内側に向って張り出した当接部10cが設けられており、中蓋11を凹部10a内で下降させて当接部10cの上面のシール部材29に気密に当接させることにより、凹部10aは気密に仕切られて密閉される。外蓋10をベース部材3に気密に当接させた状態で、中蓋11と第1の電極4の上面の間の空間は第2の密閉室9を構成し、第2の密閉室9内には第1の電極4上に載置された基板7が収容される。
【0017】
外蓋10には、第2の密閉室9に連通する気孔10bが設けられている。また、中蓋11と凹部10aとで中蓋11上に形成される空間は、第3の密閉室80となる。すなわち、中蓋11で凹部10aを密閉することにより、第1の密閉室8は第2の密閉室9と第3の密閉室80に分割される。気孔10bはベース部材3の配管孔3bに接続された配管部材17を介して、図1に示すようにプロセスガス制御部31を構成する真空計32、真空ポンプ33、大気ベント装置34およびガス供給装置35のそれぞれに接続されている。真空計32は第1の密閉室8または第2の密閉室9内の真空度を検出する。真空ポンプ33は減圧手段であり、第2の密閉室9の内部の空気を排気する。大気ベント装置34は、外蓋10の開放に先立って内部に大気を導入して真空破壊を行う。ガス供給装置35は、減圧された第1の密閉室8または第2の密閉室9内に、アルゴンガスなどのプラズマ発生用ガスを供給する。前記各部で構成されるプロセスガス制御部31は、制御部30によって制御される。
【0018】
再び図2において、外蓋10の上面には支持台22が設けられ、支持台22の上面にはモータ21が配設されている。モータ21の出力軸(図示せず)には直動機構23が連結されており、モータ21を回転駆動することにより、直動機構23に連結されたロッド12は上下動する。ロッド12は外蓋10に設けられた開口部10dを通して凹部10a内に挿通しており、したがってモータ21を駆動することにより、中蓋11は凹部10a内で上下方向に移動する。このとき、ロッド12の挿通部は保持部材27に保持されたシール部材28によって気密が保たれているため、中蓋11の上下動作において第3の気密室80は、外蓋10の外部に対して密閉状態を保っている。
【0019】
上下駆動機構20はストッパ駆動モータ24を備えており、ストッパ駆動モータ24はストッパ25を回転させる。これによりストッパ25は、ロッド12に設けられたストッパ溝26に嵌合する。この中蓋11の上下動は制御部30によって制御され、凹部10a内の任意位置に中蓋11を保持することが可能となっている。中蓋11は電気的に接地されており、第1の電極4と対向する第2の電極となっているため、中蓋11の上下位置を調整することにより、プラズマ放電時の放電電極間距離を調整することができる。またシリンダ14およびストッパ駆動モータ24の動作も制御部30によって制御される。
【0020】
この真空処理装置は上記のように構成され、以下動作について図3〜図8を参照して説明する。図3は真空処理としてのプラズマ処理を開始する前の状態を示しており、外蓋10が上昇した状態で電極4上に処理対象の基板7が載置される(第1工程)。このとき、中蓋11は上昇した位置にあり、凹部10aは開放状態となっている。次いで図4に示すように外蓋10を下降させてベース部材3に当接させ第1の密閉室8を形成する(第2の工程)。そして第1の密閉室8内を真空ポンプ33によって排気して減圧し(第3の工程)、ガス供給装置35によってプラズマ発生用ガスを供給する。次いで電極4と中蓋11の間に高周波電圧を印加することにより、第1の密閉室8内にはプラズマが発生し(第4の工程)、基板7のプラズマ処理が行われる。このとき、中蓋11の高さ位置は任意に調整できるため、処理対象の基板7に応じた適正な電極間距離Lを設定して良好なプラズマ処理を行うことができる。
【0021】
この後、図5に示すようにモータ21を駆動してロッド12を下降させ、中蓋11を凹部10a内の当接部10cの上面に当接させる。これにより、凹部10aは中蓋11により密閉されて第3の密閉室80が形成される。一方、中蓋11と電極4の間の空間は第2の密閉室9となる。すなわち、第1の密閉室8はワークを収容する第2の密閉室9と中蓋11と凹部で囲まれた第3の密閉室80とに分割される(第5工程)。ここでストッパ駆動モータ24を駆動することにより、ストッパ25をストッパ溝26に嵌合させ中蓋11が当接部10cから離れないようにする。そしてこの状態で大気ベント装置34によって第2の密閉室9内には大気が導入され、大気圧に戻る(第6工程)。
【0022】
このとき、第2の密閉室9の内容積は、凹部10a全体の容積(第1の密閉室8)に比べて小さいため、大気導入時の時間が短縮される。大気導入後には、中蓋11には第2の密閉室9内に導入された大気により上向きの力が作用するが、この力はストッパ25によって支持されるため、直動機構23やモータ21に過大な力が伝達されることがない。
【0023】
この後、図6に示すように外蓋10を上昇させてベース部材3から離反させる(第7工程)。そしてこの状態で、処理後の基板の電極4上からの搬出および新たな基板7の電極4上への搬入が行われ(第8工程)、この後に外蓋10を下降させてベース部材に当接させて次のワークを収容する第2の密閉室9を形成する(第9工程)。このとき中蓋11より上部の第3の密閉室80内は、図4において行ったプラズマ処理時のガスの状態(真空状態)がそのまま保たれている。すなわち、中蓋11によって凹部10aを密閉した状態で電極4上の基板7の搬入搬出が可能となっており、新たに供給される基板7は第2の密閉室9内に収容される。そしてこの状態で真空ポンプ33を駆動して第2の密閉室9内の真空排気を行う(第10工程)。このとき、前述のように第2の密閉室9内の内容積は小さいため真空排気に要する時間を大幅に短縮することができる。
【0024】
この後、第2の密閉室9が真空状態となったらストッパ駆動モータ24によってストッパ25の嵌合を解除し、図8に示すようにモータ21を駆動して中蓋11をプラズマ処理に適した電極間距離Lとなる高さまで上昇させる。これにより、第2の密閉室9と第3の密閉室80は連結されて第1の密閉室8となり(第11工程)、基板7はこの第1の密閉室8、すなわちプラズマ処理空間内にある。この後第1の密閉室8内のプラズマ発生用ガスを所定圧力に調整し、図4と同様に中蓋11と電極4の間に高周波電圧を印加して基板7のプラズマ処理を行う。そして処理終了後には再び中蓋11を下降させる。これにより前述の図5に示す状態なり、これ以降第4工程から第11工程までの各工程の動作が繰り返される。
【0025】
【発明の効果】
本発明の真空処理装置および真空処理方法によれば、減圧、大気導入に要する時間を短縮して生産性を向上させることができる。
【図面の簡単な説明】
【図1】本発明の一実施の形態における真空処理装置の断面図
【図2】本発明の一実施の形態における真空処理装置の部分断面図
【図3】本発明の一実施の形態における真空処理装置の部分断面図
【図4】本発明の一実施の形態における真空処理装置の部分断面図
【図5】本発明の一実施の形態における真空処理装置の部分断面図
【図6】本発明の一実施の形態における真空処理装置の部分断面図
【図7】本発明の一実施の形態における真空処理装置の部分断面図
【図8】本発明の一実施の形態における真空処理装置の部分断面図
【符号の説明】
3 ベース部材
4 第1の電極
7 基板(ワーク)
10 外蓋
10a 凹部
11 中蓋(第2の電極)
16 高周波電源部
30 制御部
33 真空ポンプ
34 大気ベント装置
35 ガス供給装置
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a vacuum processing apparatus for performing vacuum processing on a work such as a substrate.
[0002]
[Prior art]
In a vacuum processing apparatus that is an apparatus for processing performed under reduced pressure such as plasma processing, a closed space is formed by combining a base member and a lid member. The work to be processed is placed in this closed space, and the closed space is depressurized by a decompression means such as a vacuum pump. After the completion of the vacuum treatment, the atmosphere is again introduced into the closed space, and the vacuum is restored to the normal pressure.
[0003]
[Problems to be solved by the invention]
In the decompression process, a predetermined decompression time is required to depressurize the closed space to a predetermined degree of vacuum. This decompression time is generally on the order of several tens of seconds, and this time is considerably longer than the tact time of the electronic component manufacturing process and the mounting process. For this reason, in order to improve the productivity, it has been conventionally required to reduce the decompression time and the time required for the introduction into the atmosphere.
[0004]
However, in the conventional vacuum processing apparatus, it is necessary to use a large-capacity vacuum pump in order to reduce the decompression time, which leads to an increase in the size of the apparatus and an increase in equipment cost. However, since a large amount of oil mist is discharged, there is a problem that air around the apparatus is polluted.
[0005]
Further, when performing plasma processing as vacuum processing, there is an optimum distance between electrodes depending on the type of work. However, in the conventional vacuum processing apparatus, since the distance between the electrodes is fixed, individual workpieces cannot always be processed under optimum conditions, which hinders improvement in processing efficiency and quality.
[0006]
Therefore, an object of the present invention is to provide a vacuum processing apparatus capable of reducing the time required for depressurization and introduction to the atmosphere, and improving processing efficiency and quality.
[0007]
[Means for Solving the Problems]
The vacuum processing apparatus according to claim 1, comprising a base member, a first electrode mounted on the base member and having a mounting portion for mounting a workpiece, and a concave portion opened on the first electrode side. An outer lid forming a first closed chamber surrounded by the concave portion and the mounting portion by being in close contact with the base member; and a first driving unit for bringing the outer lid into and out of contact with the base member. A second electrode movably arranged vertically in the concave portion, the inner lid sealing the concave portion to form a third sealed chamber, and the outer lid air-tightly contacting the base member. A pressure reducing means connected to a second closed chamber formed between the inner lid sealing the concave portion and the mounting portion in the state described above, and exhausting air in the second closed chamber to reduce the pressure; An atmosphere vent device for returning the second closed chamber to the atmospheric pressure, and A second drive unit that connects the airtight chamber and the third airtight chamber to form the first closed chamber and raises the inner lid to a height that is a distance between electrodes suitable for the plasma processing; A gas supply device for supplying a gas for plasma generation to one closed chamber and a high-frequency power supply for applying a high-frequency voltage to the first electrode were provided.
[0008]
The vacuum processing apparatus according to claim 2 is the vacuum processing apparatus according to claim 1, wherein the outer lid is separated from the base member in a state where the inner lid seals the recess, and the mounting portion is placed in this state. Carry in and out of the upper work.
[0009]
The vacuum processing apparatus according to claim 3 is the vacuum processing apparatus according to claim 1, wherein the third lid is formed by bringing the inner lid into contact with a contact portion protruding inside the recess. .
[0010]
A vacuum processing apparatus according to a fourth aspect is the vacuum processing apparatus according to the third aspect, further comprising a stopper for preventing the inner lid from being separated from the contact portion.
[0011]
The vacuum processing method according to claim 5, further comprising a base member, a first electrode mounted on the base member and provided with a mounting portion for mounting a workpiece, and a concave portion opened on the first electrode side. An outer lid forming a first closed chamber surrounded by the concave portion and the mounting portion by being in close contact with the base member; and a second electrode disposed vertically movable in the concave portion. A vacuum processing method in a vacuum processing apparatus provided with an inner lid that seals the concave portion to form a third sealed chamber, wherein the first step of mounting a work on the mounting portion; A second step of forming a first closed chamber for accommodating the work by airtightly contacting the base member, a third step of exhausting air in the first closed chamber to reduce the pressure, and Fourth step of generating plasma by supplying a plasma generation gas into the closed space defined By lowering the inner lid and sealing the recess, the first sealed chamber is separated from the second sealed chamber, which is a space between the first electrode and the inner lid and accommodates a work, by the inner lid. A fifth step of dividing the lid into a third sealed chamber surrounded by the recess, a sixth step of returning the second sealed chamber to atmospheric pressure, and the step of closing the recess with the middle lid. A seventh step of separating the outer lid from the base member, an eighth step of taking out the work from the mounting portion and mounting the next work on the mounting portion, and contacting the outer lid with the base member. A ninth step of forming a second closed chamber accommodating the next work, a tenth step of exhausting air in the second closed chamber to reduce the pressure, and releasing the closed state of the recess by the inner lid Then, the second closed chamber and the third closed chamber are connected to form a first closed chamber, and the inner lid is plugged. To a height which is a distance between electrodes suitable for discharge and a 11th step of raising.
[0012]
7. The vacuum processing method according to claim 6, further comprising a base member, a first electrode mounted on the base member and having a mounting portion for mounting a work, and a concave portion opened on the first electrode side. An outer lid forming a first closed chamber surrounded by the concave portion and the mounting portion by being in close contact with the base member; and a second electrode disposed vertically movable in the concave portion. A vacuum processing method in a vacuum processing apparatus provided with an inner lid for sealing the recess to form a third sealed chamber, wherein a step of mounting a work on the mounting portion; The outer lid is brought into contact with the base member in a state in which the third closed chamber formed by sealing is kept in a vacuum state, and the second closed chamber containing the next work is placed below the inner lid. Forming, and evacuation of the air in the second closed chamber to reduce the pressure; The closed state of the concave portion by the lid is released, the second closed chamber and the third closed chamber are connected to form the first closed chamber, and the middle lid is set to a distance between electrodes suitable for plasma discharge. And generating a plasma by supplying a plasma generating gas to the reduced pressure of the first closed chamber.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a vacuum processing apparatus according to an embodiment of the present invention, and FIGS. 2, 3, 4, 5, 6, 7, and 8 are vacuum processing apparatuses according to an embodiment of the present invention. FIG.
[0014]
First, the structure of the vacuum processing apparatus will be described with reference to FIG. In FIG. 1, a frame 2 is erected on a base 1. A base member 3 is horizontally fixed to an upper end portion of the frame 2, and an electrode 4 is mounted on a lower surface of the base member 3 with a bolt 6 via an insulating member 5. A washer 6a made of an insulator is mounted between the bolt 6 and the electrode 4. The contact surfaces between the insulating member 5 and the base member 3 and between the insulating member 5 and the first electrode 4 are hermetically sealed by a seal member 18 (FIG. 2). The upper part of the first electrode 4 is fitted into an opening 3 a (see FIG. 2) provided in the base member 3. The upper surface of the first electrode 4 is a mounting portion on which the substrate 7 as a work is mounted, and the first electrode 4 is connected to a high-frequency power supply unit 16. By driving the high-frequency power supply 16, a high-frequency voltage is applied to the first electrode 4.
[0015]
The outer lid 10 is in contact with the upper surface of the base member 3. The outer lid 10 is fixed to a bracket 13, and the bracket 13 is connected to a rod 15 of a cylinder 14, which is a first driving means. By moving the cylinder 14 up and down, the outer lid 10 moves up and down, and comes into contact with and separates from the base member 3. A concave portion 10a opened toward the electrode 4 is provided inside the outer lid 10, and a horizontal inner lid 11 is disposed in the concave portion 10a by a rod 12 so as to be vertically movable. On the upper surface of the outer lid 10, a vertical drive mechanism 20 of the inner lid 11, which is a second driving means, is provided. By rotating the motor 21, the inner lid 11 is placed in the recess 10a via the rod 12. To move up and down.
[0016]
Next, with reference to FIGS. 2 and 4, the closed chamber for vacuum processing constituted by the outer lid 10 and the inner lid 11 and the vertical drive mechanism 20 of the inner lid 11 will be described. In FIG. 4, a concave portion 10 a provided in the outer lid 10 is open to the first electrode 4 side, and a space surrounded by the concave portion 10 a and the upper surface of the first electrode 4 is the first closed chamber 8. Has become. On the other hand, in FIG. 2, a contact portion 10c projecting inward is provided below the concave portion 10a, and the inner lid 11 is lowered in the concave portion 10a to hermetically seal the seal member 29 on the upper surface of the contact portion 10c. , The recess 10a is airtightly partitioned and hermetically sealed. In a state where the outer lid 10 is in airtight contact with the base member 3, the space between the inner lid 11 and the upper surface of the first electrode 4 forms a second closed chamber 9. Accommodates a substrate 7 placed on the first electrode 4.
[0017]
The outer lid 10 is provided with a pore 10b communicating with the second closed chamber 9. Further, a space formed on the inner lid 11 by the inner lid 11 and the concave portion 10a becomes a third closed chamber 80. That is, by sealing the recess 10 a with the inner lid 11, the first sealed chamber 8 is divided into the second sealed chamber 9 and the third sealed chamber 80. As shown in FIG. 1, a gas gauge 10, a vacuum pump 33, an atmospheric venting device 34, and a gas supply which constitute a process gas control unit 31 are provided through a piping member 17 connected to the piping hole 3 b of the base member 3. It is connected to each of the devices 35. The vacuum gauge 32 detects the degree of vacuum in the first closed chamber 8 or the second closed chamber 9. The vacuum pump 33 is a decompression unit, and exhausts the air inside the second closed chamber 9. The air venting device 34 introduces air into the inside before opening the outer lid 10 to perform vacuum breaking. The gas supply device 35 supplies a plasma generating gas such as an argon gas into the first closed chamber 8 or the second closed chamber 9 in which the pressure is reduced. The process gas controller 31 composed of the above components is controlled by the controller 30.
[0018]
Referring again to FIG. 2, a support table 22 is provided on the upper surface of the outer lid 10, and a motor 21 is provided on the upper surface of the support table 22. A linear motion mechanism 23 is connected to an output shaft (not shown) of the motor 21. When the motor 21 is driven to rotate, the rod 12 connected to the linear motion mechanism 23 moves up and down. The rod 12 is inserted into the recess 10a through the opening 10d provided in the outer cover 10. Therefore, when the motor 21 is driven, the inner cover 11 moves up and down in the recess 10a. At this time, since the insertion portion of the rod 12 is kept airtight by the seal member 28 held by the holding member 27, the third airtight chamber 80 moves upward and downward with respect to the outside of the outer lid 10 when the inner lid 11 moves up and down. To maintain a sealed state.
[0019]
The vertical drive mechanism 20 includes a stopper drive motor 24, and the stopper drive motor 24 rotates the stopper 25. Thereby, the stopper 25 is fitted into the stopper groove 26 provided in the rod 12. The vertical movement of the inner lid 11 is controlled by the control unit 30, and the inner lid 11 can be held at an arbitrary position in the concave portion 10a. Since the inner lid 11 is electrically grounded and serves as a second electrode facing the first electrode 4, by adjusting the vertical position of the inner lid 11, the distance between the discharge electrodes during plasma discharge is adjusted. Can be adjusted. The operations of the cylinder 14 and the stopper drive motor 24 are also controlled by the control unit 30.
[0020]
This vacuum processing apparatus is configured as described above, and its operation will be described below with reference to FIGS. FIG. 3 shows a state before the plasma processing as a vacuum processing is started, and the substrate 7 to be processed is placed on the electrode 4 with the outer lid 10 raised (first step). At this time, the inner lid 11 is at the raised position, and the recess 10a is open. Next, as shown in FIG. 4, the outer lid 10 is lowered to come into contact with the base member 3 to form the first closed chamber 8 (second step). Then, the inside of the first closed chamber 8 is evacuated by the vacuum pump 33 to reduce the pressure (third step), and the gas for plasma generation is supplied by the gas supply device 35. Next, by applying a high-frequency voltage between the electrode 4 and the inner lid 11, plasma is generated in the first closed chamber 8 (fourth step), and the plasma processing of the substrate 7 is performed. At this time, since the height position of the inner lid 11 can be arbitrarily adjusted, it is possible to set an appropriate inter-electrode distance L according to the substrate 7 to be processed, and perform favorable plasma processing.
[0021]
Thereafter, as shown in FIG. 5, the motor 21 is driven to lower the rod 12, and the inner lid 11 is brought into contact with the upper surface of the contact portion 10c in the recess 10a. Thereby, the concave portion 10a is closed by the inner lid 11, and the third closed chamber 80 is formed. On the other hand, the space between the inner lid 11 and the electrode 4 becomes the second closed chamber 9. That is, the first closed chamber 8 is divided into a second closed chamber 9 for accommodating the work, a third closed chamber 80 surrounded by the inner lid 11 and the recess (fifth step). Here, by driving the stopper drive motor 24, the stopper 25 is fitted into the stopper groove 26 so that the inner lid 11 does not separate from the contact portion 10c. Then, in this state, the atmosphere is introduced into the second closed chamber 9 by the atmosphere vent device 34, and the atmosphere returns to the atmospheric pressure (sixth step).
[0022]
At this time, the internal volume of the second closed chamber 9 is smaller than the entire volume of the concave portion 10a (the first closed chamber 8), so that the time for introducing into the atmosphere is reduced. After the introduction into the atmosphere, an upward force acts on the inner lid 11 due to the atmosphere introduced into the second closed chamber 9, but since this force is supported by the stopper 25, the upward force acts on the linear motion mechanism 23 and the motor 21. No excessive force is transmitted.
[0023]
Thereafter, as shown in FIG. 6, the outer lid 10 is raised and separated from the base member 3 (seventh step). In this state, the processed substrate is unloaded from the electrode 4 and a new substrate 7 is loaded onto the electrode 4 (eighth step). Thereafter, the outer lid 10 is lowered to contact the base member. The second closed chamber 9 for accommodating the next work is formed by being brought into contact (ninth step). At this time, the gas state (vacuum state) at the time of the plasma processing performed in FIG. 4 is maintained in the third sealed chamber 80 above the inner lid 11. That is, the substrate 7 on the electrode 4 can be loaded and unloaded while the recess 10 a is sealed by the inner lid 11, and the newly supplied substrate 7 is accommodated in the second sealed chamber 9. In this state, the vacuum pump 33 is driven to evacuate the second closed chamber 9 (tenth step). At this time, as described above, since the internal volume of the second closed chamber 9 is small, the time required for evacuation can be greatly reduced.
[0024]
Thereafter, when the second closed chamber 9 is in a vacuum state, the stopper 25 is disengaged by the stopper drive motor 24, and the motor 21 is driven as shown in FIG. It is raised to a height that is the distance L between the electrodes. As a result, the second closed chamber 9 and the third closed chamber 80 are connected to form the first closed chamber 8 (eleventh step), and the substrate 7 is placed in the first closed chamber 8, that is, in the plasma processing space. is there. Thereafter, the gas for plasma generation in the first closed chamber 8 is adjusted to a predetermined pressure, and a high-frequency voltage is applied between the inner lid 11 and the electrode 4 as in FIG. Then, after the processing is completed, the inner lid 11 is lowered again. As a result, the state shown in FIG. 5 is obtained, and thereafter, the operations of the respective steps from the fourth step to the eleventh step are repeated.
[0025]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to the vacuum processing apparatus and the vacuum processing method of this invention, the time required for pressure reduction and air introduction can be shortened, and productivity can be improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a vacuum processing apparatus according to an embodiment of the present invention. FIG. 2 is a partial cross-sectional view of a vacuum processing apparatus according to an embodiment of the present invention. FIG. FIG. 4 is a partial cross-sectional view of a vacuum processing apparatus according to an embodiment of the present invention. FIG. 5 is a partial cross-sectional view of a vacuum processing apparatus according to an embodiment of the present invention. FIG. 7 is a partial cross-sectional view of a vacuum processing apparatus according to one embodiment of the present invention. FIG. 7 is a partial cross-sectional view of a vacuum processing apparatus according to one embodiment of the present invention. Figure [Explanation of symbols]
3 Base member 4 First electrode 7 Substrate (work)
10 outer lid 10a recess 11 inner lid (second electrode)
16 High frequency power supply unit 30 Control unit 33 Vacuum pump 34 Atmospheric vent device 35 Gas supply device

Claims (6)

ベース部材と、このベース部材に装着され、ワークを載置する載置部を備えた第1の電極と、前記第1の電極側に開口した凹部を有し、前記ベース部材に密着することにより前記凹部と前記載置部とに囲まれる第1の密閉室を形成する外蓋と、前記外蓋を前記ベース部材に接離させる第1の駆動手段と、前記凹部内に上下動自在に配置された第2の電極であって前記凹部を密閉して第3の密閉室を形成する中蓋と、前記外蓋を前記ベース部材に気密に当接させた状態で前記凹部を密閉した中蓋と前記載置部との間に形成される第2の密閉室に接続され、この第2の密閉室内の空気を排気して減圧する減圧手段と、前記第2の密閉室を大気圧に戻す大気ベント装置と、前記中蓋を上昇させることにより前記第2の気密室と前記第3の気密室を連結して前記第1の密閉室とすると共に前記中蓋を前記プラズマ処理に適した電極間距離となる高さまで上昇させる第2の駆動手段と、前記第1の密閉室にプラズマ発生用ガスを供給するガス供給装置と、前記第1の電極に高周波電圧を印加する高周波電源部を備えたことを特徴とする真空処理装置。A base member, a first electrode mounted on the base member and provided with a mounting portion for mounting a work, and a concave portion opened on the first electrode side, and closely attached to the base member. An outer lid forming a first closed chamber surrounded by the concave portion and the mounting portion; first driving means for bringing the outer lid into and out of contact with the base member; and vertically movable in the concave portion. An inner lid that seals the recess to form a third sealed chamber, and an inner lid that seals the recess in a state where the outer lid is in airtight contact with the base member. And a decompression means connected to a second closed chamber formed between the second closed chamber and the second closed chamber, for exhausting air in the second closed chamber to reduce the pressure, and returning the second closed chamber to atmospheric pressure. An air venting device and the second hermetic chamber and the third hermetic chamber are connected by raising the inner lid. A second drive unit for raising the inner lid to a height that is a distance between electrodes suitable for the plasma processing, and supplying a plasma generating gas to the first closed chamber. And a high-frequency power supply unit for applying a high-frequency voltage to the first electrode. 前記中蓋が前記凹部を密閉した状態で前記外蓋を前記ベース部材より離反させ、この状態で載置部上のワークの搬入・搬出を行なうことを特徴とする請求項1記載の真空処理装置。2. The vacuum processing apparatus according to claim 1, wherein the outer lid is separated from the base member in a state where the inner lid seals the recess, and in this state, a work on the mounting portion is loaded and unloaded. 3. . 前記凹部の内側に張り出した当接部に前記中蓋を当接させて前記第3の密閉室を形成することを特徴とする請求項1記載の真空処理装置。2. The vacuum processing apparatus according to claim 1, wherein the third lid is formed by bringing the inner lid into contact with a contact portion protruding inside the concave portion. 3. 前記中蓋が前記当接部から離れないようにするストッパを備えたことを特徴とする請求項3記載の真空処理装置。4. The vacuum processing apparatus according to claim 3, further comprising a stopper that keeps the inner lid from separating from the contact portion. ベース部材と、このベース部材に装着され、ワークを載置する載置部を備えた第1の電極と、前記第1の電極側に開口した凹部を有し、前記ベース部材に密着することにより前記凹部と前記載置部とに囲まれる第1の密閉室を形成する外蓋と、前記凹部内に上下動自在に配置された第2の電極であって前記凹部を密閉して第3の密閉室を形成する中蓋を備えた真空処理装置における真空処理方法であって、
前記載置部にワークを載置する第1工程と、前記外蓋を前記ベース部材に気密に当接させて前記ワークを収容する第1の密閉室を形成する第2工程と、前記第1の密閉室の空気を排気して減圧を行う第3工程と、前記減圧された密閉空間内にプラズマ発生用ガスを供給してプラズマを発生させる第4工程と、前記中蓋を下降させて前記凹部を密閉することにより前記第1の密閉室を、前記第1の電極と中蓋の間の空間であってワークを収容した第2の密閉室と前記中蓋と前記凹部に囲まれた第3の密閉室とに分割する第5工程と、前記第2の密閉室を大気圧に戻す第6工程と、前記中蓋で前記凹部を密閉した状態で前記外蓋を前記ベース部材から離す第7工程と、前記載置部からワークを取り出し次のワークをこの載置部に載置する第8工程と、前記外蓋を前記ベース部材に当接させて次のワークを収容した第2の密閉室を形成する第9工程と、前記第2の密閉室の空気を排気して減圧を行う第10工程と、前記中蓋による前記凹部の密閉状態を解除して前記第2の密閉室と第3の密閉室を連結して第1の密閉室とすると共に前記中蓋をプラズマ放電に適した電極間距離となる高さまで上昇させる第11工程とを含むことを特徴とする真空処理方法。
A base member, a first electrode mounted on the base member and provided with a mounting portion for mounting a work, and a concave portion opened on the first electrode side, and closely attached to the base member. An outer lid forming a first closed chamber surrounded by the concave portion and the mounting portion, and a second electrode disposed vertically movably in the concave portion to seal the concave portion to form a third electrode. A vacuum processing method in a vacuum processing apparatus having an inner lid forming a closed chamber,
A first step of placing a work on the placement section; a second step of forming the first closed chamber for accommodating the work by airtightly contacting the outer lid with the base member; A third step of exhausting air in the closed chamber to reduce the pressure, a fourth step of supplying plasma generating gas into the reduced pressure of the closed space to generate plasma, and lowering the inner lid to reduce the pressure. By sealing the recess, the first sealed chamber is a space between the first electrode and the inner lid, the second sealed chamber containing the work, and the second enclosed chamber surrounded by the inner lid and the recess. A fifth step of dividing the second closed chamber into a closed chamber, a sixth step of returning the second closed chamber to atmospheric pressure, and a step of separating the outer lid from the base member with the inner lid closing the recess. Seventh step and an eighth step of taking out the work from the placement section and placing the next work on the placement section A ninth step in which the outer lid is brought into contact with the base member to form a second closed chamber accommodating the next work, and a tenth step in which air in the second closed chamber is exhausted to reduce the pressure. Releasing the closed state of the recess by the inner lid, connecting the second sealed chamber and the third sealed chamber to form a first sealed chamber, and setting the inner lid between electrodes suitable for plasma discharge. An eleventh step of raising the distance to a height that is a distance.
ベース部材と、このベース部材に装着され、ワークを載置する載置部を備えた第1の電極と、前記第1の電極側に開口した凹部を有し、前記ベース部材に密着することにより前記凹部と前記載置部とに囲まれる第1の密閉室を形成する外蓋と、前記凹部内に上下動自在に配置された第2の電極であって前記凹部を密閉して第3の密閉室を形成する中蓋を備えた真空処理装置における真空処理方法であって、
ワークを前記載置部に載置する工程と、前記中蓋によって前記凹部を密閉して形成された第3の密閉室を真空状態に保った状態で前記外蓋を前記ベース部材に当接させてこの中蓋の下方に次にワークを収容した第2の密閉室を形成する工程と、前記第2の密閉室の空気を排気して減圧を行う工程と、前記中蓋による前記凹部の密閉状態を解除して前記第2の密閉室と第3の密閉室を連結して第1の密閉室とすると共に前記中蓋をプラズマ放電に適した電極間距離となる高さまで上昇させる工程と、減圧された前記第1の密閉室にプラズマ発生用ガスを供給してプラズマを発生させる工程とを含むことを特徴とする真空処理方法。
A base member, a first electrode mounted on the base member and provided with a mounting portion for mounting a work, and a concave portion opened on the first electrode side, and closely attached to the base member. An outer lid forming a first closed chamber surrounded by the concave portion and the mounting portion, and a second electrode disposed vertically movably in the concave portion to seal the concave portion to form a third electrode. A vacuum processing method in a vacuum processing apparatus having an inner lid forming a closed chamber,
Placing the work on the mounting portion, and contacting the outer lid with the base member in a state where the third sealed chamber formed by sealing the recess by the inner lid is kept in a vacuum state. A step of forming a second closed chamber for accommodating the next work below the inner lid, a step of exhausting air in the second closed chamber to reduce the pressure, and sealing the recess by the inner lid. Releasing the state, connecting the second closed chamber and the third closed chamber to a first closed chamber, and raising the inner lid to a height that is a distance between electrodes suitable for plasma discharge; Supplying a plasma-generating gas to the reduced-pressure first closed chamber to generate plasma.
JP2003138847A 2003-05-16 2003-05-16 Vacuum processing device and vacuum treatment method Pending JP2004006356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003138847A JP2004006356A (en) 2003-05-16 2003-05-16 Vacuum processing device and vacuum treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003138847A JP2004006356A (en) 2003-05-16 2003-05-16 Vacuum processing device and vacuum treatment method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP01558899A Division JP3449275B2 (en) 1999-01-25 1999-01-25 Vacuum processing device and vacuum processing method

Publications (1)

Publication Number Publication Date
JP2004006356A true JP2004006356A (en) 2004-01-08

Family

ID=30438103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003138847A Pending JP2004006356A (en) 2003-05-16 2003-05-16 Vacuum processing device and vacuum treatment method

Country Status (1)

Country Link
JP (1) JP2004006356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009131048A1 (en) * 2008-04-24 2009-10-29 シャープ株式会社 Plasma processing apparatus and plasma processing method using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009131048A1 (en) * 2008-04-24 2009-10-29 シャープ株式会社 Plasma processing apparatus and plasma processing method using the same
JP2009267048A (en) * 2008-04-24 2009-11-12 Sharp Corp Plasma processing apparatus and plasma processing method using same
JP4547443B2 (en) * 2008-04-24 2010-09-22 シャープ株式会社 Plasma processing apparatus and plasma processing method using the same

Similar Documents

Publication Publication Date Title
KR102304151B1 (en) Reduced-pressure processing apparatus
JPS63204726A (en) Vacuum treatment device
JP3695184B2 (en) Plasma etching apparatus and plasma etching method
CN101258579B (en) Portable die cleaning apparatus and method thereof
CN103972134A (en) Vacuum processing apparatus
JP3449275B2 (en) Vacuum processing device and vacuum processing method
JP2004047695A5 (en)
JP3536585B2 (en) Workpiece plasma processing apparatus and plasma processing method
JP6202098B2 (en) Film forming apparatus and film forming method
JP2004006356A (en) Vacuum processing device and vacuum treatment method
JP4239990B2 (en) Plasma processing equipment
JP3276382B2 (en) Vacuum processing device and vacuum processing method
JP2001144076A (en) Device and method for wafer dry etching
JP2006351678A (en) Plasma processing apparatus
JP2010272780A (en) Sealing apparatus for electronic component
JP3814431B2 (en) Manufacturing method of semiconductor device
JP4274168B2 (en) Plasma processing apparatus and plasma processing method
JP2002141291A (en) Pressure-reducing method for vacuum chamber
JP3624905B2 (en) Plasma etching apparatus and plasma etching method
JP2001068452A (en) Apparatus and method for etching silicon substrate having formed circuit pattern
JP2001230235A (en) Plasma etching device for crystal plate and method for manufacturing crystal plate as well as crystal plate
JP3849444B2 (en) Crystal plate plasma etching apparatus and plasma etching method
JPS5846639A (en) Cleaning method for plasma processor and its plasma processor
JP2004193632A (en) Plasma etching device for quartz plate
JP3829639B2 (en) Quartz plate manufacturing method

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050125

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050708

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050927

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060614