JP2004006283A5 - - Google Patents

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Publication number
JP2004006283A5
JP2004006283A5 JP2003087725A JP2003087725A JP2004006283A5 JP 2004006283 A5 JP2004006283 A5 JP 2004006283A5 JP 2003087725 A JP2003087725 A JP 2003087725A JP 2003087725 A JP2003087725 A JP 2003087725A JP 2004006283 A5 JP2004006283 A5 JP 2004006283A5
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JP
Japan
Prior art keywords
carbon nanotubes
plasma
cathode electrode
protecting
anode electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003087725A
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English (en)
Japanese (ja)
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JP2004006283A (ja
JP4076890B2 (ja
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Publication date
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Priority to JP2003087725A priority Critical patent/JP4076890B2/ja
Priority claimed from JP2003087725A external-priority patent/JP4076890B2/ja
Publication of JP2004006283A publication Critical patent/JP2004006283A/ja
Publication of JP2004006283A5 publication Critical patent/JP2004006283A5/ja
Application granted granted Critical
Publication of JP4076890B2 publication Critical patent/JP4076890B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003087725A 2003-03-27 2003-03-27 プラズマ生成装置、エッチング装置、スパッタ装置及び成膜装置。 Expired - Fee Related JP4076890B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003087725A JP4076890B2 (ja) 2003-03-27 2003-03-27 プラズマ生成装置、エッチング装置、スパッタ装置及び成膜装置。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003087725A JP4076890B2 (ja) 2003-03-27 2003-03-27 プラズマ生成装置、エッチング装置、スパッタ装置及び成膜装置。

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002087233A Division JP3842159B2 (ja) 2002-03-26 2002-03-26 ドーピング装置

Publications (3)

Publication Number Publication Date
JP2004006283A JP2004006283A (ja) 2004-01-08
JP2004006283A5 true JP2004006283A5 (enExample) 2005-09-15
JP4076890B2 JP4076890B2 (ja) 2008-04-16

Family

ID=30437921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003087725A Expired - Fee Related JP4076890B2 (ja) 2003-03-27 2003-03-27 プラズマ生成装置、エッチング装置、スパッタ装置及び成膜装置。

Country Status (1)

Country Link
JP (1) JP4076890B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4784977B2 (ja) * 2005-09-29 2011-10-05 国立大学法人名古屋大学 ラジカル発生装置
KR100760991B1 (ko) 2006-01-05 2007-09-21 세메스 주식회사 기판 이송 장치 및 이를 구비하는 탄소 나노 튜브 생산 장치
KR100833879B1 (ko) 2006-12-27 2008-06-02 세메스 주식회사 기판의 이송 방법 및 장치 그리고 이를 포함하는탄소나노튜브의 합성 장치
CN107845559A (zh) * 2017-12-07 2018-03-27 上海睿筑环境科技有限公司 等离子体发生器电极及其制造方法

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