JP2004002512A - Method for producing silicate phosphor - Google Patents

Method for producing silicate phosphor Download PDF

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Publication number
JP2004002512A
JP2004002512A JP2002158909A JP2002158909A JP2004002512A JP 2004002512 A JP2004002512 A JP 2004002512A JP 2002158909 A JP2002158909 A JP 2002158909A JP 2002158909 A JP2002158909 A JP 2002158909A JP 2004002512 A JP2004002512 A JP 2004002512A
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Japan
Prior art keywords
silicate phosphor
silicon oxide
less
phosphor
group
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JP2002158909A
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Japanese (ja)
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JP4023222B2 (en
Inventor
Keiji Ono
大野 慶司
Susumu Miyazaki
宮崎 進
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Priority to JP2002158909A priority Critical patent/JP4023222B2/en
Priority to US10/318,146 priority patent/US6884367B2/en
Priority to TW091136169A priority patent/TWI285672B/en
Priority to KR1020020080343A priority patent/KR100947192B1/en
Priority to EP02028107A priority patent/EP1321500B1/en
Priority to DE60231282T priority patent/DE60231282D1/en
Priority to CNB021578982A priority patent/CN1315982C/en
Publication of JP2004002512A publication Critical patent/JP2004002512A/en
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Publication of JP4023222B2 publication Critical patent/JP4023222B2/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicate phosphor having high luminance and to provide the phosphor produced by the method for production. <P>SOLUTION: The method for producing the silicate phosphor comprises firing a mixture of metal compounds. In the method, a spherical silicon oxide is used as one of the metal compounds. The silicate phosphor comprises a compound represented by general formula mM<SP>1</SP>O-nM<SP>2</SP>O-2SiO<SB>2</SB>(wherein, M<SP>1</SP>is one or more selected from the group consisting of Ca, Sr and Ba; M<SP>2</SP>is one or more selected from the group consisting of Mg and Zn; m is ≥0.5 and ≤3.5; and n is ≥0.5 and ≤2.5) and one or more selected from the group consisting of Eu and Mn as an activator. The silicate phosphor is obtained by the method for production described in any thereof and contains ≥80 wt.% of particles having ≤5 μm primary particle diameter. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、ケイ酸塩蛍光体の製造方法に関し、特にプラズマディスプレイパネル(PDP)、希ガスランプなどの真空紫外線励起発光素子用に適したケイ酸塩蛍光体の製造方法に関する。
【0002】
【従来の技術】
ケイ酸塩蛍光体は、蛍光灯、ブラウン管、蓄光体、真空紫外線励起発光素子等に用いられている。特にPDPなどの真空紫外線励起発光素子においては、素子の輝度向上が強く望まれており、それらに用いられるケイ酸塩蛍光体の輝度向上が求められている。
【0003】
ケイ酸塩蛍光体は、従来から金属化合物の混合物を焼成することにより製造されている。ケイ素源となる金属化合物としては酸化ケイ素が用いられており、従来の製造方法においては、粒子形状が不定形のものが、工業的に入手容易で安価であるため用いられていた。
【0004】
【発明が解決しようとする課題】
本発明の目的は、輝度が高いケイ酸塩蛍光体の製造方法およびその製造方法により製造された蛍光体を提供することにある。
【0005】
【課題を解決するための手段】
本発明者らは、かかる状況下、鋭意研究を重ねた結果、金属化合物の混合物を焼成することによるケイ酸塩蛍光体の製造方法において、原料となる酸化ケイ素として球状の酸化ケイ素を金属化合物の一つとして用いると、発光の輝度が高いケイ酸塩蛍光体が製造できることを見出し、本発明を完成するに至った。
【0006】
すなわち本発明は、金属化合物の混合物を焼成することによるケイ酸塩蛍光体の製造方法において、球状の酸化ケイ素を金属化合物の一つとして用いるケイ酸塩蛍光体の製造方法を提供する。また本発明は、球状の酸化ケイ素の長径/短径比が1以上1.5以下である前記製造方法を提供する。また本発明は、球状の酸化ケイ素の平均粒径が0.1μm以上3μm以下である前記いずれかに記載の製造方法を提供する。また本発明は、球状の酸化ケイ素のBET比表面積が1m/g以上30m/g以下である前記いずれかに記載の製造方法を提供する。また本発明は、金属化合物の混合物が、Ca、Sr、Ba、Mg、Eu、MnおよびZnからなる群より選ばれる一種以上の金属元素の化合物とSiの化合物の混合物である前記いずれかに記載の製造方法を提供する。また本発明は、焼成における最高到達温度が1000℃以上1400℃以下の温度範囲である前記いずれかに記載の製造方法を提供する。また本発明は、ケイ酸塩蛍光体が、一般式mMO・nMO・2SiO(式中のMはCa、SrおよびBaからなる群より選ばれる1種以上、MはMgおよびZnからなる群より選ばれる1種以上、mは0.5以上3.5以下、nは0.5以上2.5以下である。)により表される化合物と、付活剤としてEu、Mnからなる群より選ばれる1種以上とを含んでなるケイ酸塩蛍光体である前記いずれかに記載の製造方法を提供する。また本発明は、前記いずれかに記載の製造方法によって得られるケイ酸塩蛍光体を提供する。さらに本発明は、一次粒子径が5μm以下の粒子が80重量%以上含まれる前記記載のケイ酸塩蛍光体を提供する。
【0007】
【発明の実施の形態】
以下に本発明について詳しく説明する。
本発明のケイ酸塩蛍光体の製造方法は、金属化合物の混合物であって焼成によりケイ酸塩蛍光体を構成しうる混合物を焼成するケイ酸塩蛍光体の製造方法において、金属化合物の一つとして、球状の酸化ケイ素を用いる。前記金属化合物には、付活剤である金属元素の化合物も含まれる。本発明の製造方法においては、酸化ケイ素は球状の粒子からなる粉末である。球状の酸化ケイ素を用いることにより、理由は明らかではないが、輝度が高い蛍光体が得られるのである。
【0008】
ここで、酸化ケイ素の粒子としては、電子顕微鏡写真を用いて計測した場合において1個の一次粒子の直径のうちで最も大きなものを長径、最も小さなものを短径とした場合、長径/短径比は1.5以下が好ましく、1.3以下がさらに好ましい。なお、酸化ケイ素の粒子が完全な球であれば、長径/短径比は1となる。酸化ケイ素の平均粒径は0.1μm以上3μm以下が好ましく、より好ましくは0.2μm以上2μm以下であり、さらに好ましくは0.2μm以上1.7μm以下である。球状の酸化ケイ素のBET比表面積は1m/g以上30m/g以下が好ましく、さらに好ましくは2m/g以上20m/g以下である。球状の酸化ケイ素の長径/短径比が1.5を超える場合、平均粒径が0.1μm未満または3μmを超える場合、BET比表面積が1m/g未満または30m/gを超える場合は、高い輝度が得られないおそれがある。
【0009】
本発明の製造方法において、金属化合物の混合物で焼成によりケイ酸塩蛍光体を構成しうる混合物に含まれる金属化合物で、酸化ケイ素以外の化合物としては、金属元素の水酸化物、炭酸塩、硝酸塩、ハロゲン化物、シュウ酸塩など高温で酸化物となる化合物または酸化物を用いることができ、これらの金属化合物は従来技術による化合物を用いることができる。
【0010】
次に、本発明の製造方法における金属化合物の混合物は、工業的に通常用いられている混合方法により各金属化合物を混合して得ることができる。混合する方法は、乾式と湿式のいずれの方法を用いても良い。乾式混合を行う場合に混合に用いる装置は、ボールミル、V型混合機、攪拌装置等の装置を用いることができる。水や有機溶剤を加えて湿式混合をボールミルや攪拌装置を用いて行うこともできる。
【0011】
湿式混合を行った場合には、直接乾燥するかまたは濾過や遠心分離等の方法により固体を液体から分離した後に乾燥する。乾燥温度は20〜300℃の範囲が好ましく、さらに好ましくは90〜200℃である。直接乾燥させる方法としては、エバポレーションや顆粒化しながら乾燥させるスプレードライを挙げることができる。
【0012】
次に、金属化合物の混合物の焼成においては、最高到達温度は1000℃から1400℃の温度範囲が好ましい。焼成において、1000℃から1400℃の温度範囲に保持する時間は0.5〜50時間が好ましい。焼成においては例えば、原料をアルミナボートに充填し、所定のガス雰囲気中で所定の温度で焼成することができる。また必要に応じて、原料に酸化ホウ素、フッ化アルミニウム等の反応促進剤(フラックス)を混合することにより、さらに結晶性が良好で輝度が高いケイ酸塩蛍光体が得られることがある。
【0013】
金属化合物の混合物の中に、金属元素の水酸化物、炭酸塩、硝酸塩、ハロゲン化物、シュウ酸塩など高温で分解し酸化物になりうるものが含まれている場合、前記焼成の前に、400℃から900℃の温度範囲において仮焼することも可能である。
【0014】
上記方法により得られる蛍光体を、ボールミルやジェットミル等を使用して粉砕したり、水等で洗浄することができ、また必要に応じ分級することもできる。得られる蛍光体の結晶性を高めるために、必要に応じて再焼成を行うこともできる。本発明によって得られるケイ酸塩蛍光体の一次粒子の凝集状態は、球状の酸化ケイ素ではない従来のケイ素化合物のみを用いる場合に比べて弱くなり、粉砕等の後の工程が簡略化できる。
【0015】
本発明の製造方法は、金属化合物が、Ca、Sr、Ba、Mg、Eu、Mn、およびZnからなる群から選ばれる一種以上の金属元素の化合物とSiの化合物である場合に好ましく適用でき、本発明の製造方法におけるケイ酸塩蛍光体としては、一般式mMO・nMO・2SiO(式中のMはCa、SrおよびBaからなる群より選ばれる1種以上、MはMgおよびZnからなる群より選ばれる1種以上、mは0.5以上3.5以下、nは0.5以上2.5以下である。)で表される化合物と、付活剤としてEu、Mnからなる群より選ばれる1種以上を含んでなるケイ酸塩蛍光体が好ましい。mが0.5未満の場合、mが3.5を超える場合、nが0.5未満の場合、nが2.5を超える場合のいずれかの場合においては、輝度が高いケイ酸塩蛍光体とはならないおそれがある。
【0016】
例えば、青色蛍光体であるCaMgSi:Euを製造するときは、焼成することによりCaMgSi:Euを構成しうるCa、Mg、Euの化合物と球状の酸化ケイ素とを原料とすることができ、さらに酸化ケイ素以外のSiの化合物を加えてもよい。
【0017】
次いで、それらの金属化合物を組成式CaMgSi:Euで表される化合物からなる蛍光体となるよう、秤量して混合し焼成する。焼成は還元性雰囲気中で、1000℃〜1400℃の温度範囲、0.5〜40時間の範囲で1回以上焼成することができる。還元性雰囲気を得る方法として、窒素と水素あるいは希ガスと水素の混合雰囲気中で焼成する方法等が挙げられる。また、これらの雰囲気に水蒸気が含まれていても良い。また、大気中で1000℃以上1400℃以下の温度範囲で焼成した後、還元性雰囲気中で1000℃以上1400℃以下の温度範囲で再度焼成することもできる。
【0018】
上記したような本発明の製造方法により得られるケイ酸塩蛍光体は、真空紫外線励起下で高い輝度を有するので、PDPや希ガスランプなどの真空紫外線励起発光素子用に好適である。また、本発明の製造方法により得られるケイ酸塩蛍光体は、真空紫外線のみならず、紫外線、陰極線あるいはX線による励起においても高い輝度を示す。
【0019】
【実施例】
次に、本発明を実施例によりさらに詳しく説明するが、本発明はこれらの実施例に限定されるものではない。
【0020】
実施例1
平均粒径が0.3μm、BET比表面積が15.5m/g、長径/短径比が1.0の球状の酸化ケイ素(SiO、株式会社アドマテックス製)を用いて、炭酸カルシウム(和光純薬工業株式会社製)CaCO、炭酸ストロンチウム(和光純薬工業株式会社製)SrCO、酸化ユーロピウム(信越化学工業株式会社製)Eu、塩基性炭酸マグネシウム(MgCOMg(OH)・5HO(和光純薬工業株式会社製)の各原料をCaCO:SrCO:Eu:(MgCOMg(OH)・5HO:SiOのモル比が0.855:0.095:0.025:0.2:2になるように配合、混合した後、2体積%H含有Ar雰囲気中で1200℃の温度で2時間保持して焼成した。このようにして、組成式Ca0.855Sr0.095Eu0.05MgSiで表される化合物からなる蛍光体が得られた。得られた蛍光体の一次粒子径を走査型電子顕微鏡による蛍光体粒子の写真を用いて計測した結果、すべて5μm以下であった。この蛍光体に、6.7Pa(5×10−2Torr)以下の真空槽内で、エキシマ146nmランプ(ウシオ電機社製、H0012型)を用いて紫外線を照射したところ、比較例1の輝度を100とすると、輝度は140であった。
【0021】
実施例2
平均粒径が0.6μm、BET比表面積が5.2m/g、長径/短径比が1.0の球状の酸化ケイ素(SiO、株式会社アドマテックス製)を用いた以外は実施例1と同様にして蛍光体を作製した。この蛍光体に、6.7Pa(5×10−2Torr)以下の真空槽内で、エキシマ146nmランプ(ウシオ電機社製、H0012型)を用いて紫外線を照射したところ、比較例1の輝度を100とすると、輝度は145であった。
【0022】
実施例3
平均粒径が0.9μm、BET比表面積が3.3m/g、長径/短径比が1.0の球状の酸化ケイ素(SiO、株式会社アドマテックス製)を用いた以外は実施例1と同様にして蛍光体を作製した。この蛍光体に、6.7Pa(5×10−2Torr)以下の真空槽内で、エキシマ146nmランプ(ウシオ電機社製、H0012型)を用いて紫外線を照射したところ、比較例1の輝度を100とすると、輝度は135であった。
【0023】
実施例4
平均粒径が1.5μm、BET比表面積が3.8m/g、長径/短径比が1.0の球状の酸化ケイ素(SiO、株式会社アドマテックス製)を用いた以外は実施例1と同様にして蛍光体を作製した。この蛍光体に、6.7Pa(5×10−2Torr)以下の真空槽内で、エキシマ146nmランプ(ウシオ電機社製、H0012型)を用いて紫外線を照射したところ、比較例1の輝度を100とすると、輝度は125であった。
【0024】
比較例1
破砕面を有する不定形の酸化ケイ素(SiO、和光純薬工業株式会社製、カタログ番号199−00625)を用いた以外は実施例1と同様にして蛍光体を作製した。実施例1と同様にして輝度を測定した結果、輝度は100であった。
【0025】
【発明の効果】
本発明によれば、輝度が高いケイ酸塩蛍光体を提供することができる。このケイ酸塩蛍光体は真空紫外線励起における輝度が高いので、PDPや希ガスランプなどの真空紫外線励起発光素子に好適な蛍光体であり、本発明の製造方法は工業的に極めて有用である。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing a silicate phosphor, and more particularly to a method for producing a silicate phosphor suitable for a vacuum ultraviolet ray excited light emitting device such as a plasma display panel (PDP) and a rare gas lamp.
[0002]
[Prior art]
Silicate phosphors are used in fluorescent lamps, cathode ray tubes, luminous bodies, VUV-excited light emitting devices, and the like. Particularly, in a vacuum ultraviolet ray excited light emitting device such as a PDP, it is strongly desired to improve the brightness of the device, and the brightness of a silicate phosphor used for them is required.
[0003]
Silicate phosphors have been conventionally produced by firing a mixture of metal compounds. Silicon oxide is used as a metal compound serving as a silicon source. In a conventional production method, an amorphous material having an irregular particle shape has been used because it is industrially easily available and inexpensive.
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide a method for producing a silicate phosphor having high luminance and a phosphor produced by the method.
[0005]
[Means for Solving the Problems]
The present inventors have conducted intensive studies under such circumstances, and as a result, in a method for producing a silicate phosphor by firing a mixture of metal compounds, a spherical silicon oxide was used as a raw material silicon oxide as a metal oxide. When used as one, they found that a silicate phosphor with high light emission luminance could be manufactured, and completed the present invention.
[0006]
That is, the present invention provides a method for producing a silicate phosphor by firing a mixture of metal compounds, wherein spherical silicon oxide is used as one of the metal compounds. The present invention also provides the above-mentioned production method, wherein the ratio of the major axis / minor axis of the spherical silicon oxide is 1 or more and 1.5 or less. Further, the present invention provides the production method according to any one of the above, wherein the spherical silicon oxide has an average particle diameter of 0.1 μm or more and 3 μm or less. Further, the present invention provides the method according to any one of the above, wherein the spherical silicon oxide has a BET specific surface area of 1 m 2 / g or more and 30 m 2 / g or less. Further, in the present invention, the mixture of metal compounds is a mixture of a compound of one or more metal elements selected from the group consisting of Ca, Sr, Ba, Mg, Eu, Mn and Zn and a compound of Si. And a method for producing the same. Further, the present invention provides the production method according to any one of the above, wherein the highest attained temperature in the firing is in a temperature range of 1000 ° C. or more and 1400 ° C. or less. In the present invention, the silicate phosphor preferably has a general formula of mM 1 O · nM 2 O · 2SiO 2 (wherein M 1 is at least one member selected from the group consisting of Ca, Sr and Ba, and M 2 is Mg And m is at least 0.5 and at most 3.5, and n is at least 0.5 and at most 2.5, and Eu as an activator. The method according to any one of the above, which is a silicate phosphor containing at least one member selected from the group consisting of Mn. The present invention also provides a silicate phosphor obtained by any one of the production methods described above. Further, the present invention provides the silicate phosphor described above, wherein the particles having a primary particle diameter of 5 μm or less are contained in an amount of 80% by weight or more.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described in detail.
The method for producing a silicate phosphor according to the present invention is a method for producing a silicate phosphor, wherein the mixture is a mixture of metal compounds and is capable of forming a silicate phosphor by firing. , A spherical silicon oxide is used. The metal compound also includes a compound of a metal element which is an activator. In the production method of the present invention, silicon oxide is a powder composed of spherical particles. By using spherical silicon oxide, a phosphor with high brightness can be obtained, although the reason is not clear.
[0008]
Here, as the particles of silicon oxide, when measured using an electron micrograph, the largest one of the diameters of one primary particle is the longer diameter, and the smallest one is the shorter diameter. The ratio is preferably 1.5 or less, more preferably 1.3 or less. If the silicon oxide particles are perfect spheres, the ratio of the major axis to the minor axis is 1. The average particle size of the silicon oxide is preferably from 0.1 μm to 3 μm, more preferably from 0.2 μm to 2 μm, even more preferably from 0.2 μm to 1.7 μm. The BET specific surface area of the spherical silicon oxide is preferably from 1 m 2 / g to 30 m 2 / g, more preferably from 2 m 2 / g to 20 m 2 / g. When the ratio of the major axis / minor axis of the spherical silicon oxide exceeds 1.5, when the average particle diameter is less than 0.1 μm or more than 3 μm, and when the BET specific surface area is less than 1 m 2 / g or more than 30 m 2 / g, High brightness may not be obtained.
[0009]
In the production method of the present invention, the metal compound contained in the mixture capable of constituting the silicate phosphor by firing with the mixture of the metal compounds, and the compound other than silicon oxide includes hydroxide, carbonate, and nitrate of the metal element. , Halides, oxalates, etc., compounds or oxides that become oxides at high temperatures can be used, and these metal compounds can be conventional compounds.
[0010]
Next, the mixture of metal compounds in the production method of the present invention can be obtained by mixing the respective metal compounds by a mixing method generally used industrially. As a method of mixing, either a dry method or a wet method may be used. When dry mixing is performed, an apparatus such as a ball mill, a V-type mixer, or a stirrer can be used as an apparatus used for mixing. Water and an organic solvent can be added and wet mixing can be performed using a ball mill or a stirrer.
[0011]
When wet mixing is performed, the mixture is dried directly, or dried after separating a solid from a liquid by a method such as filtration or centrifugation. The drying temperature is preferably in the range of 20 to 300 ° C, more preferably 90 to 200 ° C. Examples of the method for directly drying include evaporation and spray drying for drying while granulating.
[0012]
Next, in firing the mixture of metal compounds, the highest temperature is preferably in a temperature range of 1000 ° C. to 1400 ° C. In the firing, the time for maintaining the temperature in the range of 1000 ° C. to 1400 ° C. is preferably 0.5 to 50 hours. In firing, for example, the raw material can be filled in an alumina boat and fired at a predetermined temperature in a predetermined gas atmosphere. If necessary, a silicate phosphor having better crystallinity and higher luminance may be obtained by mixing a reaction accelerator (flux) such as boron oxide or aluminum fluoride with the raw material.
[0013]
In the mixture of the metal compounds, hydroxides, carbonates, nitrates, halides, oxalates, and the like of the metal elements, when those that can be decomposed at high temperatures to become oxides are contained, before the calcination, It is also possible to perform calcination in a temperature range of 400 ° C. to 900 ° C.
[0014]
The phosphor obtained by the above method can be pulverized using a ball mill, a jet mill, or the like, washed with water or the like, and classified if necessary. In order to increase the crystallinity of the obtained phosphor, re-firing can be performed as necessary. The agglomerated state of the primary particles of the silicate phosphor obtained by the present invention is weaker than the case where only a conventional silicon compound which is not spherical silicon oxide is used, and the subsequent steps such as pulverization can be simplified.
[0015]
The production method of the present invention can be preferably applied when the metal compound is a compound of one or more metal elements selected from the group consisting of Ca, Sr, Ba, Mg, Eu, Mn, and Zn and a compound of Si, As the silicate phosphor in the production method of the present invention, as the silicate phosphor, a compound represented by the general formula: mM 1 O · nM 2 O · 2SiO 2 (where M 1 is at least one member selected from the group consisting of Ca, Sr and Ba, M 2 Is one or more selected from the group consisting of Mg and Zn, m is 0.5 or more and 3.5 or less, and n is 0.5 or more and 2.5 or less.) And an activator A silicate phosphor containing at least one selected from the group consisting of Eu and Mn is preferable. In any of the cases where m is less than 0.5, m is greater than 3.5, n is less than 0.5, and n is greater than 2.5, a high-luminance silicate fluorescence is used. It may not be a body.
[0016]
For example, when producing CaMgSi 2 O 6 : Eu which is a blue phosphor, a compound of Ca, Mg, and Eu, which can constitute CaMgSi 2 O 6 : Eu by firing, and spherical silicon oxide are used as raw materials. And a compound of Si other than silicon oxide may be added.
[0017]
Next, these metal compounds are weighed, mixed and fired so as to become a phosphor composed of the compound represented by the composition formula CaMgSi 2 O 6 : Eu. The firing can be performed one or more times in a reducing atmosphere at a temperature in the range of 1000 ° C. to 1400 ° C. for 0.5 to 40 hours. As a method for obtaining a reducing atmosphere, there is a method of firing in a mixed atmosphere of nitrogen and hydrogen or a rare gas and hydrogen. Further, water vapor may be contained in these atmospheres. In addition, after firing in the temperature range of 1000 ° C. or higher and 1400 ° C. or lower, firing can be performed again in a reducing atmosphere at a temperature range of 1000 ° C. or higher and 1400 ° C. or lower.
[0018]
The silicate phosphor obtained by the production method of the present invention as described above has high luminance under vacuum ultraviolet excitation, and thus is suitable for vacuum ultraviolet excitation light emitting devices such as PDPs and rare gas lamps. Further, the silicate phosphor obtained by the production method of the present invention exhibits high luminance not only in vacuum ultraviolet rays but also in excitation by ultraviolet rays, cathode rays or X-rays.
[0019]
【Example】
Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
[0020]
Example 1
Using spherical silicon oxide (SiO 2 , manufactured by Admatechs Co., Ltd.) having an average particle diameter of 0.3 μm, a BET specific surface area of 15.5 m 2 / g, and a major axis / minor axis ratio of 1.0, calcium carbonate ( CaCO 3 , strontium carbonate (manufactured by Wako Pure Chemical Industries, Ltd.) SrCO 3 , europium oxide (manufactured by Shin-Etsu Chemical Co., Ltd.) Eu 2 O 3 , basic magnesium carbonate (MgCO 3 ) 4 Mg (OH) 2 · 5H 2 O each raw materials CaCO of (manufactured by Wako Pure Chemical Industries, Ltd.) 3: SrCO 3: Eu 2 O 3: (MgCO 3) 4 Mg (OH) 2 · 5H 2 O: of SiO 2 After blending and mixing so that the molar ratio becomes 0.855: 0.095: 0.025: 0.2: 2, the mixture is kept at a temperature of 1200 ° C. for 2 hours in an Ar atmosphere containing 2% by volume of H 2. Firing . Thus, a phosphor composed of the compound represented by the composition formula Ca 0.855 Sr 0.095 Eu 0.05 MgSi 2 O 6 was obtained. The primary particle size of the obtained phosphor was measured using a photograph of the phosphor particles with a scanning electron microscope, and as a result, all were 5 μm or less. When this phosphor was irradiated with ultraviolet rays in a vacuum chamber of 6.7 Pa (5 × 10 −2 Torr) or less using an excimer 146 nm lamp (Hushio Electric Co., Ltd., H0012 type), the luminance of Comparative Example 1 was reduced. Assuming 100, the luminance was 140.
[0021]
Example 2
Example 1 except that spherical silicon oxide (SiO 2 , manufactured by Admatechs Co., Ltd.) having an average particle diameter of 0.6 μm, a BET specific surface area of 5.2 m 2 / g, and a major axis / minor axis ratio of 1.0 was used. A phosphor was produced in the same manner as in Example 1. When this phosphor was irradiated with ultraviolet rays in a vacuum chamber of 6.7 Pa (5 × 10 −2 Torr) or less using an excimer 146 nm lamp (Hushio Electric Co., Ltd., type H0012), the luminance of Comparative Example 1 was reduced. Assuming 100, the luminance was 145.
[0022]
Example 3
Example 1 except that spherical silicon oxide (SiO 2 , manufactured by Admatechs Co., Ltd.) having an average particle diameter of 0.9 μm, a BET specific surface area of 3.3 m 2 / g, and a major axis / minor axis ratio of 1.0 was used. A phosphor was produced in the same manner as in Example 1. When this phosphor was irradiated with ultraviolet rays in a vacuum chamber of 6.7 Pa (5 × 10 −2 Torr) or less using an excimer 146 nm lamp (Hushio Electric Co., Ltd., type H0012), the luminance of Comparative Example 1 was reduced. Assuming 100, the luminance was 135.
[0023]
Example 4
Example 1 except that spherical silicon oxide (SiO 2 , manufactured by Admatechs Co., Ltd.) having an average particle size of 1.5 μm, a BET specific surface area of 3.8 m 2 / g, and a major axis / minor axis ratio of 1.0 was used. A phosphor was produced in the same manner as in Example 1. When this phosphor was irradiated with ultraviolet rays in a vacuum chamber of 6.7 Pa (5 × 10 −2 Torr) or less using an excimer 146 nm lamp (Hushio Electric Co., Ltd., type H0012), the luminance of Comparative Example 1 was reduced. Assuming 100, the luminance was 125.
[0024]
Comparative Example 1
A phosphor was prepared in the same manner as in Example 1 except that amorphous silicon oxide having a crushed surface (SiO 2 , manufactured by Wako Pure Chemical Industries, Ltd., catalog number 199-06125) was used. As a result of measuring the luminance in the same manner as in Example 1, the luminance was 100.
[0025]
【The invention's effect】
According to the present invention, a silicate phosphor having high luminance can be provided. Since the silicate phosphor has high luminance when excited by vacuum ultraviolet light, it is a suitable phosphor for vacuum ultraviolet light-emitting devices such as PDPs and rare gas lamps, and the production method of the present invention is industrially extremely useful.

Claims (9)

金属化合物の混合物を焼成することによるケイ酸塩蛍光体の製造方法において、球状の酸化ケイ素を金属化合物の一つとして用いることを特徴とするケイ酸塩蛍光体の製造方法。A method for producing a silicate phosphor by firing a mixture of metal compounds, wherein spherical silicon oxide is used as one of the metal compounds. 球状の酸化ケイ素の長径/短径比が1以上1.5以下である請求項1記載の製造方法。The production method according to claim 1, wherein the ratio of the major axis / minor axis of the spherical silicon oxide is 1 or more and 1.5 or less. 球状の酸化ケイ素の平均粒径が0.1μm以上3μm以下である請求項1または2に記載の製造方法。3. The production method according to claim 1, wherein the spherical silicon oxide has an average particle size of 0.1 μm or more and 3 μm or less. 球状の酸化ケイ素のBET比表面積が1m/g以上30m/g以下である請求項1〜3のいずれかに記載の製造方法。The process according to any one of claims 1 to 3 BET specific surface area of the silicon oxide spherical is not more than 1 m 2 / g or more 30 m 2 / g. 金属化合物の混合物が、Ca、Sr、Ba、Mg、Eu、MnおよびZnからなる群より選ばれる一種以上の金属元素の化合物とSiの化合物の混合物である請求項1〜4のいずれかに記載の製造方法。The mixture of metal compounds is a mixture of a compound of one or more metal elements selected from the group consisting of Ca, Sr, Ba, Mg, Eu, Mn and Zn and a compound of Si. Manufacturing method. 焼成における最高到達温度が1000℃以上1400℃以下の温度範囲である請求項1〜5のいずれかに記載の製造方法。The production method according to any one of claims 1 to 5, wherein a maximum attained temperature in the firing is in a temperature range of 1000C to 1400C. ケイ酸塩蛍光体が、一般式mMO・nMO・2SiO(式中のMはCa、SrおよびBaからなる群より選ばれる1種以上、MはMgおよびZnからなる群より選ばれる1種以上、mは0.5以上3.5以下、nは0.5以上2.5以下である。)により表される化合物と、付活剤としてEu、Mnからなる群より選ばれる1種以上とを含んでなるケイ酸塩蛍光体である請求項1〜6のいずれかに記載の製造方法。The silicate phosphor has a general formula of mM 1 O · nM 2 O · 2SiO 2 (wherein M 1 is at least one member selected from the group consisting of Ca, Sr and Ba, and M 2 is a group consisting of Mg and Zn) M is 0.5 or more and 3.5 or less, and n is 0.5 or more and 2.5 or less), and Eu and Mn as activators. The production method according to any one of claims 1 to 6, which is a silicate phosphor containing at least one selected from the group consisting of: 請求項1〜7のいずれかに記載の製造方法によって得られることを特徴とするケイ酸塩蛍光体。A silicate phosphor obtained by the production method according to claim 1. 一次粒子径が5μm以下の粒子が80重量%以上含まれる請求項8記載のケイ酸塩蛍光体。The silicate phosphor according to claim 8, wherein particles having a primary particle diameter of 5 µm or less are contained in an amount of 80% by weight or more.
JP2002158909A 2001-12-19 2002-05-31 Method for producing silicate phosphor Expired - Fee Related JP4023222B2 (en)

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TW091136169A TWI285672B (en) 2001-12-19 2002-12-13 Method for producing silicate phosphor
KR1020020080343A KR100947192B1 (en) 2001-12-19 2002-12-16 Method for producing silicate phosphor
EP02028107A EP1321500B1 (en) 2001-12-19 2002-12-17 Method for producing silicate phosphor
DE60231282T DE60231282D1 (en) 2001-12-19 2002-12-17 Process for the preparation of a silicate phosphor
CNB021578982A CN1315982C (en) 2001-12-19 2002-12-17 Method for preparing silicate inorganic luminescent material

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