JP2003533676A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003533676A5 JP2003533676A5 JP2001578932A JP2001578932A JP2003533676A5 JP 2003533676 A5 JP2003533676 A5 JP 2003533676A5 JP 2001578932 A JP2001578932 A JP 2001578932A JP 2001578932 A JP2001578932 A JP 2001578932A JP 2003533676 A5 JP2003533676 A5 JP 2003533676A5
- Authority
- JP
- Japan
- Prior art keywords
- opening
- charge
- polymer
- component
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 description 39
- 229920000642 polymer Polymers 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 19
- 239000002184 metal Substances 0.000 description 6
- 239000002159 nanocrystal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001965 increased Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000007523 nucleic acids Chemical class 0.000 description 2
- 108020004707 nucleic acids Proteins 0.000 description 2
- 230000002708 enhancing Effects 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
少なくとも１つのポリマーを検出するためのシステムであって、
前記ポリマーが通過可能な開口部を有する少なくとも１つの検出領域を有する少なくとも１つの半導体装置を含み、前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分であり、
前記検出領域が前記開口部における前記構成要素の前記電荷を検出するようになるように、前記検出領域は、前記ポリマーが前記開口部に入ることを可能にするのに十分な断面を有する、前記半導体装置における開口部を定義する絶縁層を有する前記半導体装置の領域を含む、システム。
【請求項２】
前記絶縁層が酸化物層を含む、請求項１に記載のシステム。
【請求項３】
前記検出領域の前記領域が、ドーピングされていない半導体層を含む、請求項１に記載のシステム。
【請求項４】
前記検出領域の前記領域が、前記開口部が形成された酸化物層を含み、前記酸化物層が少なくとも１つのシリコンナノ結晶を含んでいる、請求項１に記載のシステム。
【請求項５】
前記開口部が非円形である、請求項１に記載のシステム。
【請求項６】
ポリマーを検出するための装置を製造するための方法であって、
少なくとも１つの半導体層を含む半導体構造を提供するステップと、
前記半導体構造に前記ポリマーが通過可能な開口部を有する検出領域を作成するステップと、
前記開口部の前記断面を小さくするために前記開口部を形成する前記半導体層の壁面にドーピングされていない半導体層を形成するステップと、を含み、
前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分である、方法。
【請求項７】
前記検出領域作成ステップが、前記開口部の前記断面を小さくするために前記開口部を形成する前記半導体層の壁面に酸化物層を形成し、前記酸化物層が少なくとも１つのシリコンナノ結晶を含んでいるステップを含む、請求項６に記載の方法。
【請求項８】
前記検出領域作成ステップが、酸化物を含む前記絶縁層を形成するステップをさらに含む、請求項６に記載の方法。
【請求項９】
少なくとも１つのポリマーを検出するためのシステムであって、
絶縁層および少なくとも１つの金属層を含む少なくとも１つの構造を含み、前記ポリマーが通過可能な開口部を有する少なくとも１つの検出領域を形成するよう配置され、前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分である、システム。
【請求項１０】
前記絶縁層が前記金属層に接触する、請求項９に記載のシステム。
【請求項１１】
前記構造が２つの金属層を含み、前記絶縁層が前記２つの金属層の間に配置されている、請求項９に記載のシステム。
【請求項１２】
前記検出領域が前記開口部における前記構成要素の前記電荷を検出するようになるように、前記検出領域が、前記ポリマーが前記開口部に入ることを可能にするのに十分な断面を有する前記開口部が形成された前記構造の領域を含む、請求項９に記載のシステム。
【請求項１３】
前記開口部を通る前記ポリマーの動きを容易にするために前記構造において動きを生成するようになっている励起装置をさらに含む、請求項１２に記載のシステム。
【請求項１４】
前記開口部が非円形である、請求項１２に記載のシステム。
【請求項１５】
前記検出領域が凹部における前記構成要素の電荷を検出するようになるように、前記検出領域が前記構造において前記凹部が形成された前記構造の領域を含む、請求項９に記載のシステム。
【請求項１６】
前記少なくとも１つの構造が、前記構成要素と結合または前記構成要素と化学反応を起こす前記半導体装置の部分（portion）がなくとも、前記構成要素の前記電荷を受動的に（passively）検出する、請求項９に記載のシステム。
【請求項１７】
前記少なくとも１つの構造が、前記構成要素の単一の（single）前記電荷を受動的に（passively）に検出する、請求項９に記載のシステム。
【請求項１８】
ポリマーを検出するための装置を製造するための方法であって、
絶縁層および少なくとも１つの金属層を含む構造を提供するステップと、
前記構造に検出領域を作成するステップと、を含み、
前記検出領域は、前記ポリマーが通過可能な開口部を有し、前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分である、方法。
【請求項１９】
前記構成要素が核酸鎖の塩基を含み、
前記作成ステップが前記核酸鎖の前記塩基を表す前記電荷を検出するようになっている前記検出領域を作成する、請求項１８に記載の方法。
【請求項２０】
前記構造に開口部を作成し、前記開口部が前記ポリマーの一部がそれを通過することを可能にするのに十分な断面を有し、前記検出領域が前記開口部における前記構成要素を表す前記電荷を検出するようになるように前記検出領域に対して位置決めされているステップをさらに含む、請求項１８に記載の方法。
【請求項２１】
前記開口部が非円形である、請求項２０に記載の方法。
【請求項２２】
前記検出領域が凹部における前記構成要素を表す前記電荷を検出するようになるように前記検出領域に対して位置決めされた前記凹部を前記構造に作成するステップをさらに含む、請求項１８に記載の方法。
【請求項２３】
前記検出領域が、前記構成要素と結合または前記構成要素と化学反応を起こす前記半導体装置の部分（portion）がなくとも、前記構成要素の電荷を受動的に（passively）検出する、請求項１８に記載の方法。
【請求項２４】
前記検出領域が、前記構成要素の単一の前記電荷を受動的に（passively）に検出する、請求項１８に記載のシステム。
【請求項２５】
少なくとも１つのポリマーを検出するためのシステムであって、
複数の検出装置と、
読取り器と、を含み、
前記検出装置のそれぞれは、前記ポリマーが通過可能な開口部を有する少なくとも１つの検出領域を有し、前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分あり、
前記読み取り器は、前記検出装置のそれぞれからの読取りを選択的に得るようになっており、それぞれの前記読取りが前記検出装置によって検出された電荷のそれぞれを表す、システム。
【請求項２６】
前記検出装置の少なくとも１つが、前記検出領域に近接する前記ポリマーの構成要素の電荷を検出するようになっている、前記検出領域を少なくとも１つ有する少なくとも１つの半導体装置を含む、請求項２５に記載のシステム。
【請求項２７】
前記検出装置の少なくとも１つが、少なくとも１つの前記検出領域を形成するよう配置された絶縁層および少なくとも１つの金属層を含んだ構造を含み、前記検出領域に近接する前記ポリマーの構成要素を表す電荷を検出するようになっている、請求項２５に記載のシステム。
【請求項２８】
前記検出装置それぞれが、前記構成要素と結合または前記構成要素と化学反応を起こす前記半導体装置の部分（portion）がなくとも、前記構成要素の前記電荷を受動的に（passively）検出する、請求項２５に記載のシステム。
【請求項２９】
前記検出装置それぞれが、前記構成要素の単一の前記電荷を受動的に（passively）に検出する、請求項２５に記載のシステム。
【請求項３０】
少なくとも１つのポリマーを検出するためのシステムであって、
前記ポリマーが通過可能な開口部を有する少なくとも１つの検出領域を有する少なくとも１つの半導体装置を含み、前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分あり、前記検出領域が開口部における前記構成要素の前記電荷を検出するようになるようになっており、前記検出領域の前記領域が、前記開口部が形成された酸化物層を含み、前記酸化物層が少なくとも１つのシリコンナノ結晶を含んでいる、システム。
【請求項３１】
ポリマーを検出するための装置を製造するための方法であって、
少なくとも１つの半導体層を含む半導体構造を提供するステップと、
前記半導体構造に検出領域を作成するステップを含み、前記検出領域は、前記ポリマーが通過可能な開口部を有し、前記開口部は、約１００ｎｍ以下の断面積を有し、前記少なくとも１つのポリマーが前記開口部を通過する間に少なくとも前記ポリマーの構成要素の電荷が前記領域に鏡像電荷を作成するよう構成されており、前記鏡像電荷は、前記構成要素の電荷に関連する量により、前記領域の導電性を高めるのに十分あり、
前記開口部作成ステップが、前記開口部の前記断面を小さくするために前記開口部を形成する前記半導体層の壁面に酸化物層を形成し、前記酸化物層が少なくとも１つのシリコンナノ結晶を含んでいる、酸化物層形成ステップを含む、方法。
[Claims]
(1)
A system for detecting at least one polymer, comprising:
The device includes at least one semiconductor device having at least one detection region having an opening through which the polymer can pass , wherein the opening has a cross-sectional area of about 100 nm or less, and the at least one polymer defines the opening. At least the charge of the polymer component is configured to create a mirror image charge in the region during passage, the mirror image charge increasing the conductivity of the region by an amount associated with the charge of the component. Is enough to
The detection region has a sufficient cross-section to allow the polymer to enter the opening, such that the detection region is to detect the charge of the component in the opening. A system comprising a region of the semiconductor device having an insulating layer defining an opening in the semiconductor device .
(2)
The system of claim 1, wherein the insulating layer comprises an oxide layer.
(3)
The system of claim 1, wherein the region of the detection region includes an undoped semiconductor layer.
(4)
The system of claim 1, wherein the region of the detection region includes an oxide layer in which the opening is formed, wherein the oxide layer includes at least one silicon nanocrystal.
(5)
The system of claim 1, wherein the opening is non-circular.
6.
A method for manufacturing a device for detecting a polymer, comprising:
Providing a semiconductor structure including at least one semiconductor layer;
Creating a detection region in the semiconductor structure having an opening through which the polymer can pass;
Forming an undoped semiconductor layer on a wall surface of the semiconductor layer forming the opening to reduce the cross section of the opening,
The opening has a cross-sectional area of about 100 nm or less, and is configured such that at least a charge of a component of the polymer creates a mirror image charge in the region while the at least one polymer passes through the opening. And wherein the mirror image charge is sufficient to increase the conductivity of the region by an amount related to the charge of the component.
7.
The detecting region forming step forms an oxide layer on a wall surface of the semiconductor layer forming the opening to reduce the cross section of the opening, and the oxide layer includes at least one silicon nanocrystal. 7. The method of claim 6, comprising the step of:
Claim 8.
7. The method of claim 6, wherein the step of creating a detection region further comprises forming the insulating layer including an oxide.
9.
A system for detecting at least one polymer, comprising:
At least one structure comprising an insulating layer and at least one metal layer, wherein the at least one structure is arranged to form at least one detection region having an opening through which the polymer can pass, the opening having a cross-sectional area of about 100 nm or less. Wherein the charge of at least a component of the polymer creates a mirror image charge in the region while the at least one polymer passes through the opening, the mirror image charge of the component The system wherein the quantity associated with the charge is sufficient to increase the conductivity of the region.
10.
The system of claim 9, wherein the insulating layer contacts the metal layer.
11.
The system of claim 9, wherein the structure comprises two metal layers, and wherein the insulating layer is disposed between the two metal layers.
12.
Wherein the detection region has a cross section sufficient to allow the polymer to enter the opening, such that the detection region is to detect the charge of the component at the opening. The system of claim 9, wherein the system includes an area of the structure where a portion is formed.
Claim 13
13. The system of claim 12, further comprising an exciter adapted to generate motion in the structure to facilitate movement of the polymer through the opening.
14.
13. The system of claim 12, wherein the opening is non-circular.
15.
The system of claim 9, wherein the detection region comprises a region of the structure where the depression is formed in the structure, such that the detection region is adapted to detect a charge of the component in the depression.
16.
The at least one structure passively detects the charge on the component without a portion of the semiconductor device that couples to or chemically reacts with the component. Item 10. The system according to Item 9.
17.
The system of claim 9, wherein the at least one structure passively detects a single charge of the component.
18.
A method for manufacturing a device for detecting a polymer, comprising:
Providing a structure comprising an insulating layer and at least one metal layer;
Creating a detection region in the structure,
The detection region has an opening through which the polymer can pass, the opening has a cross-sectional area of about 100 nm or less, and at least one of the polymers passes while the at least one polymer passes through the opening. The method wherein the component charge is configured to create a mirror image charge in the region, wherein the mirror image charge is sufficient to increase the conductivity of the region by an amount associated with the component charge.
(19)
The component comprises a nucleic acid strand base,
19. The method of claim 18, wherein said creating step creates said detection region adapted to detect said charge representing said base of said nucleic acid strand.
20.
Creating an opening in the structure, the opening having a sufficient cross-section to allow a portion of the polymer to pass therethrough, and the detection area representing the component at the opening 19. The method of claim 18, further comprising the step of being positioned with respect to the detection region to detect the charge.
21.
21. The method of claim 20, wherein said openings are non-circular.
22.
19. The method of claim 18, further comprising creating the recess in the structure positioned relative to the detection region such that the detection region is to detect the charge representing the component in the recess. .
23.
19. The method of claim 18, wherein the detection region passively detects a charge on the component without the portion of the semiconductor device that couples to or chemically reacts with the component. The described method.
24.
20. The system of claim 18, wherein the detection region passively detects a single charge of the component.
25.
A system for detecting at least one polymer, comprising:
A plurality of detection devices;
A reader;
Each of the detection devices has at least one detection region having an opening through which the polymer can pass, wherein the opening has a cross-sectional area of about 100 nm or less, and wherein the at least one polymer has the opening. At least the charge of the component of the polymer is configured to create a mirror image charge in the region while passing through the mirror image, wherein the image charge, by an amount related to the charge of the component, reduces the conductivity of the region. Enough to enhance,
The system wherein the reader is adapted to selectively obtain readings from each of the detection devices, wherein each of the readings represents a respective one of the charges detected by the detection device.
26.
26. The method of claim 25, wherein at least one of the detection devices includes at least one semiconductor device having at least one of the detection regions, adapted to detect a charge of a component of the polymer proximate to the detection region. The described system.
27.
At least one of the detection devices includes a structure that includes an insulating layer and at least one metal layer arranged to form at least one of the detection regions, and a charge representing a component of the polymer proximate to the detection region. 26. The system of claim 25, wherein the system is adapted to detect
28.
The method of claim 1, wherein each of the detection devices passively detects the charge on the component without the portion of the semiconductor device that couples to or chemically reacts with the component. The system according to claim 25.
29.
26. The system of claim 25, wherein each of said detection devices passively detects a single said charge of said component.
30.
A system for detecting at least one polymer, comprising:
The device includes at least one semiconductor device having at least one detection region having an opening through which the polymer can pass, wherein the opening has a cross-sectional area of about 100 nm or less, and the at least one polymer defines the opening. At least the charge of the polymer component is configured to create a mirror image charge in the region during passage, the mirror image charge increasing the conductivity of the region by an amount associated with the charge of the component. The detection region is adapted to detect the charge of the component in an opening, the region of the detection region including an oxide layer in which the opening is formed. The system wherein the oxide layer comprises at least one silicon nanocrystal.
31.
A method for manufacturing a device for detecting a polymer, comprising:
Providing a semiconductor structure including at least one semiconductor layer;
Creating a detection region in the semiconductor structure, wherein the detection region has an opening through which the polymer can pass, the opening has a cross-sectional area of about 100 nm or less, and the at least one polymer Is configured such that at least a charge of the polymer component creates a mirror image charge in the region while passing through the opening, wherein the mirror image charge is increased by an amount related to the charge of the component. Enough to increase the conductivity of the
The opening forming step includes forming an oxide layer on a wall surface of the semiconductor layer forming the opening to reduce the cross section of the opening, wherein the oxide layer includes at least one silicon nanocrystal. A method comprising forming an oxide layer.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19913000P | 2000-04-24 | 2000-04-24 | |
| US60/199,130 | 2000-04-24 | ||
| US21768100P | 2000-07-12 | 2000-07-12 | |
| US60/217,681 | 2000-07-12 | ||
| US09/653,543 | 2000-08-31 | ||
| US09/653,543 US6413792B1 (en) | 2000-04-24 | 2000-08-31 | Ultra-fast nucleic acid sequencing device and a method for making and using the same |
| US25958401P | 2001-01-04 | 2001-01-04 | |
| US60/259,584 | 2001-01-04 | ||
| PCT/US2001/013101 WO2001081896A1 (en) | 2000-04-24 | 2001-04-24 | An ultra-fast nucleic acid sequencing device and a method for making and using the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003533676A JP2003533676A (en) | 2003-11-11 |
| JP2003533676A5 true JP2003533676A5 (en) | 2008-06-19 |
| JP4719906B2 JP4719906B2 (en) | 2011-07-06 |
Family
ID=27498237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001578932A Expired - Lifetime JP4719906B2 (en) | 2000-04-24 | 2001-04-24 | Field effect transistor device for ultrafast nucleic acid sequencing |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1285252A1 (en) |
| JP (1) | JP4719906B2 (en) |
| AU (1) | AU2001259128A1 (en) |
| WO (1) | WO2001081896A1 (en) |
Families Citing this family (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413792B1 (en) * | 2000-04-24 | 2002-07-02 | Eagle Research Development, Llc | Ultra-fast nucleic acid sequencing device and a method for making and using the same |
| US7250115B2 (en) | 2003-06-12 | 2007-07-31 | Agilent Technologies, Inc | Nanopore with resonant tunneling electrodes |
| US7347921B2 (en) | 2003-07-17 | 2008-03-25 | Agilent Technologies, Inc. | Apparatus and method for threading a biopolymer through a nanopore |
| US7138672B2 (en) | 2003-09-25 | 2006-11-21 | Agilent Technologies, Inc. | Apparatus and method for making a tensile diaphragm with an insert |
| US6846702B1 (en) | 2003-10-24 | 2005-01-25 | Agilent Technologies, Inc. | Nanopore chip with N-type semiconductor |
| US7279337B2 (en) | 2004-03-10 | 2007-10-09 | Agilent Technologies, Inc. | Method and apparatus for sequencing polymers through tunneling conductance variation detection |
| US8536661B1 (en) | 2004-06-25 | 2013-09-17 | University Of Hawaii | Biosensor chip sensor protection methods |
| CN101103357B (en) | 2004-08-13 | 2012-10-03 | 哈佛学院院长等 | An ultra high-throughput opti-nanopore DNA readout platform |
| US7888013B2 (en) | 2004-08-27 | 2011-02-15 | National Institute For Materials Science | Method of analyzing DNA sequence using field-effect device, and base sequence analyzer |
| US8563237B2 (en) * | 2004-09-30 | 2013-10-22 | Agilent Technologies, Inc. | Biopolymer resonant tunneling with a gate voltage source |
| US7785785B2 (en) | 2004-11-12 | 2010-08-31 | The Board Of Trustees Of The Leland Stanford Junior University | Charge perturbation detection system for DNA and other molecules |
| EP2348300A3 (en) * | 2005-04-06 | 2011-10-12 | The President and Fellows of Harvard College | Molecular characterization with carbon nanotube control |
| US20100291548A1 (en) | 2006-03-12 | 2010-11-18 | Applera Corporation | Methods of Detecting Target Nucleic Acids |
| CA2672315A1 (en) | 2006-12-14 | 2008-06-26 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes using large scale fet arrays |
| US11339430B2 (en) | 2007-07-10 | 2022-05-24 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
| US8262900B2 (en) | 2006-12-14 | 2012-09-11 | Life Technologies Corporation | Methods and apparatus for measuring analytes using large scale FET arrays |
| US8349167B2 (en) | 2006-12-14 | 2013-01-08 | Life Technologies Corporation | Methods and apparatus for detecting molecular interactions using FET arrays |
| GB0625070D0 (en) * | 2006-12-15 | 2007-01-24 | Imp Innovations Ltd | Characterization of molecules |
| US8003319B2 (en) | 2007-02-02 | 2011-08-23 | International Business Machines Corporation | Systems and methods for controlling position of charged polymer inside nanopore |
| US9034637B2 (en) * | 2007-04-25 | 2015-05-19 | Nxp, B.V. | Apparatus and method for molecule detection using nanopores |
| US8192600B2 (en) * | 2007-09-27 | 2012-06-05 | The Board Of Trustees Of The University Of Illinois | Solid state device |
| WO2010008480A2 (en) | 2008-06-25 | 2010-01-21 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes using large scale fet arrays |
| US20100301398A1 (en) | 2009-05-29 | 2010-12-02 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes |
| US20100137143A1 (en) | 2008-10-22 | 2010-06-03 | Ion Torrent Systems Incorporated | Methods and apparatus for measuring analytes |
| US20120261274A1 (en) | 2009-05-29 | 2012-10-18 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
| US8776573B2 (en) | 2009-05-29 | 2014-07-15 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
| JP5586001B2 (en) * | 2009-08-26 | 2014-09-10 | 独立行政法人物質・材料研究機構 | Nanoribbon and manufacturing method thereof, FET using nanoribbon and manufacturing method thereof, base sequence determination method using nanoribbon and apparatus thereof |
| WO2011108540A1 (en) | 2010-03-03 | 2011-09-09 | 国立大学法人大阪大学 | Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide |
| US8940148B2 (en) | 2010-06-22 | 2015-01-27 | International Business Machines Corporation | Nano-fluidic field effective device to control DNA transport through the same |
| US8598018B2 (en) | 2010-06-22 | 2013-12-03 | International Business Machines Corporation | Forming an electrode having reduced corrosion and water decomposition on surface using a custom oxide layer |
| US8354336B2 (en) | 2010-06-22 | 2013-01-15 | International Business Machines Corporation | Forming an electrode having reduced corrosion and water decomposition on surface using an organic protective layer |
| JP2013533482A (en) | 2010-06-30 | 2013-08-22 | ライフ テクノロジーズ コーポレーション | Ion-sensitive charge storage circuit and method |
| CN106449632B (en) | 2010-06-30 | 2019-09-20 | 生命科技公司 | Array column integrator |
| US11307166B2 (en) | 2010-07-01 | 2022-04-19 | Life Technologies Corporation | Column ADC |
| JP5876044B2 (en) | 2010-07-03 | 2016-03-02 | ライフ テクノロジーズ コーポレーション | Chemically sensitive sensor with lightly doped drain |
| EP2617061B1 (en) | 2010-09-15 | 2021-06-30 | Life Technologies Corporation | Methods and apparatus for measuring analytes |
| WO2012039812A1 (en) | 2010-09-24 | 2012-03-29 | Life Technologies Corporation | Matched pair transistor circuits |
| GB201113309D0 (en) * | 2011-08-02 | 2011-09-14 | Izon Science Ltd | Characterisation of particles |
| EP2574923A1 (en) * | 2011-09-28 | 2013-04-03 | Koninklijke Philips Electronics N.V. | Apparatus for the processing of single molecules |
| US9970984B2 (en) | 2011-12-01 | 2018-05-15 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
| US9758821B2 (en) | 2012-04-17 | 2017-09-12 | International Business Machines Corporation | Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencing |
| CN103424457B (en) * | 2012-05-18 | 2016-02-10 | 中国科学院微电子研究所 | Biosensor and DNA sequencing method thereof |
| US8786331B2 (en) | 2012-05-29 | 2014-07-22 | Life Technologies Corporation | System for reducing noise in a chemical sensor array |
| JP6033602B2 (en) * | 2012-08-08 | 2016-11-30 | 株式会社日立ハイテクノロジーズ | Biomolecule detection method, biomolecule detection apparatus, and analytical device |
| US9535033B2 (en) | 2012-08-17 | 2017-01-03 | Quantum Biosystems Inc. | Sample analysis method |
| JP6282036B2 (en) | 2012-12-27 | 2018-02-21 | クオンタムバイオシステムズ株式会社 | Method and control apparatus for controlling movement speed of substance |
| US9080968B2 (en) | 2013-01-04 | 2015-07-14 | Life Technologies Corporation | Methods and systems for point of use removal of sacrificial material |
| US9841398B2 (en) | 2013-01-08 | 2017-12-12 | Life Technologies Corporation | Methods for manufacturing well structures for low-noise chemical sensors |
| US8962366B2 (en) | 2013-01-28 | 2015-02-24 | Life Technologies Corporation | Self-aligned well structures for low-noise chemical sensors |
| CN103193189B (en) * | 2013-02-21 | 2015-08-26 | 东南大学 | A kind of multi-electrode nanopore device for DNA detection and manufacture method thereof |
| US8963216B2 (en) | 2013-03-13 | 2015-02-24 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
| US8841217B1 (en) | 2013-03-13 | 2014-09-23 | Life Technologies Corporation | Chemical sensor with protruded sensor surface |
| US9835585B2 (en) | 2013-03-15 | 2017-12-05 | Life Technologies Corporation | Chemical sensor with protruded sensor surface |
| EP2972281B1 (en) | 2013-03-15 | 2023-07-26 | Life Technologies Corporation | Chemical device with thin conductive element |
| EP2972280B1 (en) | 2013-03-15 | 2021-09-29 | Life Technologies Corporation | Chemical sensor with consistent sensor surface areas |
| US9116117B2 (en) | 2013-03-15 | 2015-08-25 | Life Technologies Corporation | Chemical sensor with sidewall sensor surface |
| JP6581074B2 (en) | 2013-03-15 | 2019-09-25 | ライフ テクノロジーズ コーポレーション | Chemical sensor with consistent sensor surface area |
| US20140336063A1 (en) | 2013-05-09 | 2014-11-13 | Life Technologies Corporation | Windowed Sequencing |
| US10458942B2 (en) | 2013-06-10 | 2019-10-29 | Life Technologies Corporation | Chemical sensor array having multiple sensors per well |
| US9377431B2 (en) | 2013-07-24 | 2016-06-28 | Globalfoundries Inc. | Heterojunction nanopore for sequencing |
| EP3578987A1 (en) | 2013-09-18 | 2019-12-11 | Quantum Biosystems Inc. | Biomolecule sequencing devices, systems and methods |
| JP2015077652A (en) | 2013-10-16 | 2015-04-23 | クオンタムバイオシステムズ株式会社 | Nano-gap electrode and method for manufacturing same |
| JP6208253B2 (en) * | 2013-11-08 | 2017-10-04 | 株式会社日立ハイテクノロジーズ | DNA transport control device, manufacturing method thereof, and DNA sequencing apparatus |
| JP2015154750A (en) * | 2014-02-20 | 2015-08-27 | 国立大学法人大阪大学 | Electrode for biomolecule sequencing apparatus, and biomolecule sequencing apparatus, method, and program |
| US10438811B1 (en) | 2014-04-15 | 2019-10-08 | Quantum Biosystems Inc. | Methods for forming nano-gap electrodes for use in nanosensors |
| WO2015170782A1 (en) | 2014-05-08 | 2015-11-12 | Osaka University | Devices, systems and methods for linearization of polymers |
| JP6434744B2 (en) * | 2014-08-07 | 2018-12-05 | ローラス株式会社 | Semiconductor biosensor |
| JP6285040B2 (en) * | 2014-09-11 | 2018-02-28 | 株式会社日立製作所 | Biomolecular structure analysis device and method of forming biomolecule structure analysis device |
| JP6259929B2 (en) * | 2014-11-12 | 2018-01-10 | 株式会社日立製作所 | Biological polymer analyzer and biological polymer analyzing method |
| CN111505087A (en) | 2014-12-18 | 2020-08-07 | 生命科技公司 | Method and apparatus for measuring analytes using large scale FET arrays |
| US10077472B2 (en) | 2014-12-18 | 2018-09-18 | Life Technologies Corporation | High data rate integrated circuit with power management |
| EP3234576B1 (en) | 2014-12-18 | 2023-11-22 | Life Technologies Corporation | High data rate integrated circuit with transmitter configuration |
| US11124827B2 (en) * | 2016-06-23 | 2021-09-21 | Roche Sequencing Solutions, Inc. | Period-to-period analysis of AC signals from nanopore sequencing |
| KR101737946B1 (en) * | 2016-08-16 | 2017-05-19 | 서울대학교산학협력단 | Method of manufacturing sample for film property measurement and analysis, and sample manuvactured by the method |
| EP3519097A4 (en) * | 2016-10-03 | 2020-04-29 | Genvida Technology Company Limited | Method and apparatus for the analysis and identification of molecules |
| US20180334697A1 (en) * | 2017-05-16 | 2018-11-22 | Sensor Kinesis Corporation | Method for isothermal dna detection using a modified crispr/cas system and the apparatus for detection by surface acoustic waves for gene editing |
| WO2019160925A1 (en) * | 2018-02-16 | 2019-08-22 | Illumina, Inc. | Device for sequencing |
| CN110191760B (en) * | 2019-04-16 | 2022-09-27 | 京东方科技集团股份有限公司 | Micro-channel device, manufacturing method thereof and micro-fluidic system |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8522785D0 (en) * | 1985-09-14 | 1985-10-16 | Emi Plc Thorn | Chemical-sensitive semiconductor device |
| US5846708A (en) * | 1991-11-19 | 1998-12-08 | Massachusetts Institiute Of Technology | Optical and electrical methods and apparatus for molecule detection |
| US5871918A (en) * | 1996-06-20 | 1999-02-16 | The University Of North Carolina At Chapel Hill | Electrochemical detection of nucleic acid hybridization |
| JPH08278281A (en) * | 1995-04-07 | 1996-10-22 | Hitachi Ltd | Field effect type chemical substance detection device and dna sequanator using it |
| CA2238003C (en) * | 1995-12-01 | 2005-02-22 | Innogenetics N.V. | Impedimetric detection system and method of production thereof |
| US6060327A (en) * | 1997-05-14 | 2000-05-09 | Keensense, Inc. | Molecular wire injection sensors |
| WO1999036573A1 (en) * | 1998-01-20 | 1999-07-22 | Schichman Steven A | Detection of genetic information |
| JP3245124B2 (en) * | 1998-02-19 | 2002-01-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Field effect transistor having vertical gate sidewalls and method of manufacturing the same |
| JP3233207B2 (en) * | 1998-03-20 | 2001-11-26 | 日本電気株式会社 | Method for manufacturing field effect transistor |
| US6002131A (en) * | 1998-03-25 | 1999-12-14 | The Board Of Trustees Of The Leland Stanford Junior University | Scanning probe potentiometer |
| US6627067B1 (en) * | 1999-06-22 | 2003-09-30 | President And Fellows Of Harvard College | Molecular and atomic scale evaluation of biopolymers |
-
2001
- 2001-04-24 AU AU2001259128A patent/AU2001259128A1/en not_active Abandoned
- 2001-04-24 JP JP2001578932A patent/JP4719906B2/en not_active Expired - Lifetime
- 2001-04-24 WO PCT/US2001/013101 patent/WO2001081896A1/en not_active Application Discontinuation
- 2001-04-24 EP EP01932615A patent/EP1285252A1/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003533676A5 (en) | ||
| JP2003531592A5 (en) | ||
| US8080456B2 (en) | Robust top-down silicon nanowire structure using a conformal nitride | |
| JP2005221450A (en) | Physical quantity sensor | |
| EP1341079A2 (en) | Random number generating device | |
| US5503017A (en) | Semiconductor acceleration sensor | |
| EP0940652A3 (en) | Surface shape recognition sensor and method of fabricating the same | |
| JP4455831B2 (en) | Method for manufacturing acceleration sensor | |
| WO2003007384A3 (en) | Single-electron transistors and fabrication methods | |
| WO2007038974A8 (en) | Method for determining a particle and sensor device therefor | |
| EP1226090A4 (en) | Gas sensor and fabrication method thereof | |
| JP2010203818A (en) | Semiconductor sensor and method of manufacturing the same | |
| US20150177273A1 (en) | Motion Sensor Device and Methods for Forming the Same | |
| EP0905765A3 (en) | Endpoint detection method and apparatus | |
| JPH07307478A (en) | Semiconductor accelerometer and its manufacture | |
| EP1385010A3 (en) | Semiconductor acceleration sensor using doped semiconductor layer as wiring | |
| EP2675748B1 (en) | Strengthened micro-electromechanical system devices and methods of making thereof | |
| JPH09321318A (en) | Semiconductor device with movable gate | |
| EP1267405A3 (en) | Semiconductor device and method for fabricating the same | |
| JP2008224254A (en) | Sensor device and manufacturing method for sensor device | |
| US7004029B2 (en) | Semiconductor dynamic quantity sensor | |
| US20030190817A1 (en) | Electrode structure, and method for manufacturing thin-film structure | |
| US20080179698A1 (en) | Piezoresistive sensing structure | |
| US20040020897A1 (en) | Method for manufacturing thin-film structure | |
| CN105084300B (en) | A kind of semiconductor devices and preparation method thereof, electronic installation |