JP2003510755A5 - - Google Patents
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- Publication number
- JP2003510755A5 JP2003510755A5 JP2001527290A JP2001527290A JP2003510755A5 JP 2003510755 A5 JP2003510755 A5 JP 2003510755A5 JP 2001527290 A JP2001527290 A JP 2001527290A JP 2001527290 A JP2001527290 A JP 2001527290A JP 2003510755 A5 JP2003510755 A5 JP 2003510755A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19946490.1 | 1999-09-28 | ||
| DE19946490A DE19946490A1 (de) | 1999-09-28 | 1999-09-28 | Magnetoresistiver Schreib/Lese-Speicher sowie Verfahren zum Beschreiben und Auslesen eines solchen Speichers |
| PCT/DE2000/003293 WO2001024190A1 (de) | 1999-09-28 | 2000-09-21 | Mehrwertiger magnetoresistiver schreib/lese-speicher sowie verfahren zum beschreiben und auslesen eines solchen speichers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003510755A JP2003510755A (ja) | 2003-03-18 |
| JP2003510755A5 true JP2003510755A5 (ja) | 2008-11-20 |
| JP4338926B2 JP4338926B2 (ja) | 2009-10-07 |
Family
ID=7923600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001527290A Expired - Fee Related JP4338926B2 (ja) | 1999-09-28 | 2000-09-21 | 多値の磁気抵抗読取り／書込みメモリー、ならびに、このメモリーからの読取り方法およびこのメモリーへの書込み方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6717843B1 (ja) |
| EP (1) | EP1222662B1 (ja) |
| JP (1) | JP4338926B2 (ja) |
| KR (1) | KR100538972B1 (ja) |
| CN (1) | CN1183548C (ja) |
| DE (2) | DE19946490A1 (ja) |
| TW (1) | TW480489B (ja) |
| WO (1) | WO2001024190A1 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002334971A (ja) * | 2001-05-09 | 2002-11-22 | Nec Corp | 磁性メモリ及びその動作方法 |
| US6795336B2 (en) * | 2001-12-07 | 2004-09-21 | Hynix Semiconductor Inc. | Magnetic random access memory |
| TWI222763B (en) * | 2002-03-29 | 2004-10-21 | Toshiba Corp | Magnetic logic element and magnetic logic element array |
| US7502248B2 (en) * | 2004-05-21 | 2009-03-10 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device |
| EP1890296B1 (en) * | 2004-05-21 | 2010-11-17 | Samsung Electronics Co., Ltd. | Multi-bit magnetic random access memory device and methods of operating and sensing the same |
| JP4599259B2 (ja) | 2005-09-20 | 2010-12-15 | 株式会社東芝 | 磁気素子及びこれを用いた磁気信号処理装置 |
| TWI449040B (zh) * | 2006-10-06 | 2014-08-11 | Crocus Technology Sa | 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法 |
| US7388776B1 (en) * | 2006-12-22 | 2008-06-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Three-dimensional magnetic memory |
| JP2009080904A (ja) * | 2007-09-26 | 2009-04-16 | Toshiba Corp | 磁気記録装置 |
| KR100982455B1 (ko) | 2008-04-30 | 2010-09-16 | 노던 라이트 세미컨덕터 코포레이션 | 전기 에너지 저장 장치 |
| CN101635841B (zh) * | 2009-09-04 | 2012-02-08 | 杭州华三通信技术有限公司 | 视频业务信息读写性能的调整方法和设备 |
| TWI393894B (zh) * | 2009-11-20 | 2013-04-21 | Inst Information Industry | 識別迴路上電器用電行為的方法、系統與電腦程式產品 |
| KR101598833B1 (ko) * | 2009-12-21 | 2016-03-03 | 삼성전자주식회사 | 자기 메모리 소자 및 그 동작방법 |
| KR20130015927A (ko) * | 2011-08-05 | 2013-02-14 | 에스케이하이닉스 주식회사 | 멀티 레벨을 갖는 자기 저항 메모리 장치 및 그 구동방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5585986A (en) | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
| US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
| US5768181A (en) * | 1997-04-07 | 1998-06-16 | Motorola, Inc. | Magnetic device having multi-layer with insulating and conductive layers |
| US5864498A (en) * | 1997-10-01 | 1999-01-26 | High Density Circuits | Ferromagnetic memory using soft magnetic material and hard magnetic material |
| US5930164A (en) * | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
| US5953248A (en) * | 1998-07-20 | 1999-09-14 | Motorola, Inc. | Low switching field magnetic tunneling junction for high density arrays |
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1999
- 1999-09-28 DE DE19946490A patent/DE19946490A1/de not_active Withdrawn
-
2000
- 2000-09-21 JP JP2001527290A patent/JP4338926B2/ja not_active Expired - Fee Related
- 2000-09-21 US US10/089,531 patent/US6717843B1/en not_active Expired - Fee Related
- 2000-09-21 EP EP00974329A patent/EP1222662B1/de not_active Expired - Lifetime
- 2000-09-21 CN CNB008134669A patent/CN1183548C/zh not_active Expired - Fee Related
- 2000-09-21 DE DE50002394T patent/DE50002394D1/de not_active Expired - Fee Related
- 2000-09-21 WO PCT/DE2000/003293 patent/WO2001024190A1/de active IP Right Grant
- 2000-09-21 KR KR10-2002-7003993A patent/KR100538972B1/ko not_active IP Right Cessation
- 2000-09-27 TW TW089119935A patent/TW480489B/zh not_active IP Right Cessation