JP2003510235A5 - - Google Patents
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- Publication number
- JP2003510235A5 JP2003510235A5 JP2001525015A JP2001525015A JP2003510235A5 JP 2003510235 A5 JP2003510235 A5 JP 2003510235A5 JP 2001525015 A JP2001525015 A JP 2001525015A JP 2001525015 A JP2001525015 A JP 2001525015A JP 2003510235 A5 JP2003510235 A5 JP 2003510235A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15572599P | 1999-09-23 | 1999-09-23 | |
| US60/155,725 | 1999-09-23 | ||
| PCT/US2000/025525 WO2001021861A1 (en) | 1999-09-23 | 2000-09-18 | Czochralski process for growing single crystal silicon by controlling the cooling rate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003510235A JP2003510235A (ja) | 2003-03-18 |
| JP2003510235A5 true JP2003510235A5 (https=) | 2005-12-22 |
Family
ID=22556551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001525015A Pending JP2003510235A (ja) | 1999-09-23 | 2000-09-18 | 冷却速度を制御することにより単結晶シリコンを成長させるチョクラルスキー法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20030196587A1 (https=) |
| EP (1) | EP1222324B1 (https=) |
| JP (1) | JP2003510235A (https=) |
| KR (1) | KR100745311B1 (https=) |
| DE (1) | DE60010496T2 (https=) |
| TW (1) | TW571006B (https=) |
| WO (1) | WO2001021861A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US20110263126A1 (en) | 2000-11-22 | 2011-10-27 | Sumco Corporation | Method for manufacturing a silicon wafer |
| DE10066124B4 (de) * | 2000-11-24 | 2007-12-13 | Mitsubishi Materials Silicon Corp. | Silicium-Wafer |
| CN100348782C (zh) | 2001-01-26 | 2007-11-14 | Memc电子材料有限公司 | 具有基本上没有氧化诱生堆垛层错的空位为主的芯的低缺陷密度硅 |
| US8147613B2 (en) | 2002-11-12 | 2012-04-03 | Memc Electronic Materials, Inc. | Crystal puller and method for growing a monocrystalline ingot |
| WO2005029547A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
| US8673248B2 (en) * | 2006-05-19 | 2014-03-18 | Memc Electronic Materials, Inc. | Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface |
| ITTO20110335A1 (it) * | 2011-04-14 | 2012-10-15 | Consiglio Nazionale Ricerche | Procedimento di formazione di cristalli massivi, in particolare monocristalli di fluoruri drogati con ioni di terre rare |
| JP6716344B2 (ja) * | 2016-06-01 | 2020-07-01 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
| CN113825862B (zh) | 2019-04-11 | 2024-12-10 | 环球晶圆股份有限公司 | 后段主体长度具有减小变形的锭的制备工艺 |
| SG11202111451WA (en) | 2019-04-18 | 2021-11-29 | Globalwafers Co Ltd | Methods for growing a single crystal silicon ingot using continuous czochralski method |
| EP4245895A3 (en) | 2019-09-13 | 2023-11-15 | GlobalWafers Co., Ltd. | Method for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method and a single crystal silicon ingot grown by this method |
| CN114182355B (zh) * | 2021-11-30 | 2023-03-28 | 徐州鑫晶半导体科技有限公司 | 消除间隙型缺陷B-swirl的方法、硅片及电子器件 |
| US20250293073A1 (en) | 2024-03-18 | 2025-09-18 | Globalwafers Co., Ltd. | Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232995A (ja) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | 引上単結晶の冷却方法 |
| US5264189A (en) * | 1988-02-23 | 1993-11-23 | Mitsubishi Materials Corporation | Apparatus for growing silicon crystals |
| US4981549A (en) * | 1988-02-23 | 1991-01-01 | Mitsubishi Kinzoku Kabushiki Kaisha | Method and apparatus for growing silicon crystals |
| IT1280041B1 (it) * | 1993-12-16 | 1997-12-29 | Wacker Chemitronic | Procedimento per il tiraggio di un monocristallo di silicio |
| JP3285111B2 (ja) * | 1994-12-05 | 2002-05-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
| JP3085146B2 (ja) * | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
| JPH08337490A (ja) * | 1995-06-09 | 1996-12-24 | Shin Etsu Handotai Co Ltd | 結晶欠陥の少ないシリコン単結晶及びその製造方法 |
| JP3006669B2 (ja) * | 1995-06-20 | 2000-02-07 | 信越半導体株式会社 | 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置 |
| US5840120A (en) * | 1996-01-22 | 1998-11-24 | Memc Electronic Materials, Inc. | Apparatus for controlling nucleation of oxygen precipitates in silicon crystals |
| US5676751A (en) * | 1996-01-22 | 1997-10-14 | Memc Electronic Materials, Inc. | Rapid cooling of CZ silicon crystal growth system |
| DE19637182A1 (de) * | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
| JPH10152395A (ja) * | 1996-11-21 | 1998-06-09 | Komatsu Electron Metals Co Ltd | シリコン単結晶の製造方法 |
| US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
| US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| DE19711922A1 (de) * | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
| US6190631B1 (en) * | 1997-04-09 | 2001-02-20 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| EP0973963B1 (en) * | 1997-04-09 | 2002-06-19 | MEMC Electronic Materials, Inc. | Low defect density silicon |
| JPH1179889A (ja) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ |
| KR100541882B1 (ko) * | 1998-05-01 | 2006-01-16 | 왁커 엔에스씨이 코포레이션 | 실리콘 반도체 기판 및 그의 제조 방법 |
| JPH11349393A (ja) * | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
| US6077343A (en) * | 1998-06-04 | 2000-06-20 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it |
| US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| JP4405082B2 (ja) * | 1998-09-02 | 2010-01-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 内部ゲッタリング性の改良された熱アニーリングされたウエハ |
| EP1114454A2 (en) * | 1998-09-02 | 2001-07-11 | MEMC Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| US6197111B1 (en) * | 1999-02-26 | 2001-03-06 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
| US6376395B2 (en) * | 2000-01-11 | 2002-04-23 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
-
2000
- 2000-09-18 WO PCT/US2000/025525 patent/WO2001021861A1/en not_active Ceased
- 2000-09-18 EP EP00963572A patent/EP1222324B1/en not_active Expired - Lifetime
- 2000-09-18 KR KR1020027003802A patent/KR100745311B1/ko not_active Expired - Fee Related
- 2000-09-18 DE DE60010496T patent/DE60010496T2/de not_active Expired - Lifetime
- 2000-09-18 JP JP2001525015A patent/JP2003510235A/ja active Pending
- 2000-09-22 TW TW089119609A patent/TW571006B/zh not_active IP Right Cessation
-
2003
- 2003-05-06 US US10/430,483 patent/US20030196587A1/en not_active Abandoned