JP2003347366A - Tape carrier for semiconductor device, semiconductor device and method for manufacturing the semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape carrier for a semiconductor device which can improve a transfer property in the case of flip chip connection in a carrier tape for a semiconductor device, eliminate thermal deformation in the case of heating in a manufacturing process, and improve the yield and productivity of a product (semiconductor device). <P>SOLUTION: A reinforcing copper layer 31 is left in a prescribed region on one surface of an optically opaque polyimide film 30 wherein an Sn plating lead 35 in formed on the other surface, and a TAB tape 40 is formed, thereby improving the strength of the TAB tape 40 with the reinforcing copper layer 31. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a T-shaped insulating tape having leads formed on an insulating tape having light transmitting or non-transmitting properties.
The present invention relates to a tape carrier for a semiconductor device, a semiconductor device, and a method of manufacturing the semiconductor device, which enable good flip-chip connection of an AB (Tape Automated Bonding) tape to an LSI chip.

[0002]

2. Description of the Related Art Generally, a TAB tape is formed as follows. First, 35m with a thickness of 50 to 125 μm
Device holes are formed by punching on an insulating film with a water absorption of 1.4% or less, such as an organic polyimide tape or a glass epoxy tape having a width of m, 48 mm, 70 mm, etc., and the TAB tape body is mounted when mounting an LSI chip. A perforation hole (feed hole) for feeding is formed. Next, 8 ~
After bonding a copper foil such as a rolled copper foil or an electrolytic copper foil of 18 to 35 μm with an adhesive having a thickness of 24 μm, a predetermined copper wiring pattern is formed by a photoresist etching process, and further, electroless plating of Sn And TA
Form a B tape.

After connecting the LSI chip to the lead of the TAB tape by flip chip bonding, potting sealing is performed,
For example, it is mounted on a liquid crystal panel.

In the case of flip-chip connection, as shown in FIG. 5A, an L value (color material, Vol. 57, No. 10, "Color Measurement") which is an index of light transmittance (an index indicating lightness) is used. "See Kiyoshi Chaki, pages 558-568, October 1984)
Of the Sn plating lead 12 on the insulating film 10
Using an TAB tape 14 on which an Au bump 16 is formed, the LSI chip 18 on which an Au bump 16 is formed is connected to the Sn-plated lead 12 of the TAB tape 14.

[0005] That is, as shown in FIG. 5 (b), an LSI chip 18 is mounted on a stage 20, and over the LSI chip 18, a Sn plating lead 12 is mounted on an Au bump 16.
The TAB tape 14 is arranged so that the Sn plating leads 12 are opposed to each other, and the position of the Sn plating leads 12 and the Au bumps 16 is adjusted while transmitting through the insulating film 10 by the CCD camera 24 combined with the heating tool 22 from above the insulating film 10. I do.

Next, as shown in FIG. 5 (c), a heating tool 22 is brought into contact with the insulating film 10 for a predetermined time and is heated so that the Sn plating lead 12 and the Au bump 16 are heated.
And flip-chip connection.

[0007]

However, in a conventional semiconductor device using a tape carrier (TAB tape) for a semiconductor device, alignment at the time of flip chip connection is performed by the CCD camera 24 while passing through the insulating film 10. Therefore, when the L value is 35 or more and 38 μm or less, 12.5
The insulating film 10 having a thickness of not less than μm must be used. When such a thin insulating film 10 is used,
Since the stiffness of the insulating film 10 is weak, there is a problem that the transportability is deteriorated.

Further, in order to improve transportability, TAB
A protective film having a thickness of 50 μm may be bonded to the insulating film 10 of the tape to reinforce the tape.
The heat resistance of the protective film having a thickness of m is as low as 120 ° C. or less, and there is a problem that thermal deformation occurs depending on the heating temperature at the time of flip chip connection.

Further, there is a problem that the yield and the productivity of the product (semiconductor device) are deteriorated due to the deterioration of the transportability and the thermal deformation.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is possible to improve the transportability of a tape carrier for a semiconductor device at the time of flip chip connection and to eliminate thermal deformation during heating in a manufacturing process. It is an object of the present invention to provide a semiconductor device tape carrier, a semiconductor device, and a method for manufacturing the semiconductor device, which can improve the yield and productivity of products (semiconductor devices).

[0011]

According to another aspect of the present invention, there is provided a tape carrier for a semiconductor device having a predetermined pattern of leads on an insulating tape. It is characterized in that a reinforcing copper layer for suppressing a decrease in transportability is formed on a predetermined portion opposite to the surface on which the leads are formed.

Further, the insulating tape is light-impermeable.

In the tape carrier for a semiconductor device having leads of a predetermined pattern on a light-transmitting insulating tape according to the present invention, the transparency of the insulating tape is not impaired on a surface opposite to a surface on which the leads are formed. Is characterized in that a copper foil is formed as described above.

Further, the semiconductor device of the present invention has leads of a predetermined pattern on the first surface of the insulating tape,
And a semiconductor chip that is flip-chip connected via the bumps and the leads of the tape carrier.

Further, the semiconductor device of the present invention has a predetermined pattern of leads on a first surface of a light-transmitting insulating tape, and a copper foil on a second surface of the insulating tape so that the transmittance is not impaired. And a semiconductor chip which is flip-chip connected via the leads and bumps of the tape carrier.

Further, a method of manufacturing a semiconductor device according to the present invention
A lead of a tape carrier having a predetermined pattern of leads on a first surface of a light-impermeable insulating tape and a reinforcing copper layer for suppressing a decrease in transportability on a second surface thereof; And an alignment step of performing alignment for connecting both the leads and the bumps that have been set in the opposite state in the arrangement step while imaging both with the imaging unit. It is characterized by including.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a configuration diagram of a TAB tape and a semiconductor device using the same according to a first embodiment of the present invention.

The TAB tape @COF (ChiF shown in FIG.
When forming a TAB tape for p On Film or Chip on Frexible Cuircut), first, as shown in (a), a reinforcing copper layer 31 is attached to one surface of a light-impermeable polyimide film (insulating film) 30. The light-impermeable casting tape 32 is formed. As the tape 32, for example, Espanex tape manufactured by Nippon Steel Chemical is used. ESPANEX tape has a width of 35 mm, a copper layer of 9 μm,
The polyimide film is a tape having a thickness of 25 μm.

Next, as shown in FIG. 2B, an adhesive 33 having a water absorption of 1.2% is applied to the light-impermeable polyimide film 30 by 8%.
The adhesive 33 is coated with a copper foil 34 such as a rolled copper foil or an electrolytic copper foil as shown in (c), and then, as shown in FIG. A copper foil 34 is formed in a predetermined wiring pattern by an etching process, and further, electroless plating of Sn is performed to form a Sn plating lead 35, and a TAB tape 40 is formed leaving the reinforcing copper layer 31 in a predetermined portion.

The TAB tape 40 has the same shape (d).
LSI chip 37 formed with Au bump 36 shown in FIG.
As shown in (e), the Sn plating lead 35 and Au
The alignment with the bump 36 is performed to perform flip-chip connection, and the sealing resin 38 is potted so as not to hinder the underfill.

When the flip-chip connection is performed, FIG.
As shown in (a) of FIG.
Contact so that the Sn-plated lead 35 faces upward.
The B tape 40 is placed, and the LSI chip 37 is fixed to a heating tool 44 disposed above the TAB tape 40 via two CCD cameras (not shown). On this occasion,
The Au bump 36 of the LSI chip 37 is fixed so as to face the Sn plating lead 35.

While the upper CCD camera captures an image of the Au bump 36 and the lower CCD camera captures an image of the Sn plating lead 35, the stage 41 moves in the X and Y directions to move the Sn plating lead 35 and the Au plating.
The alignment with the bump 36 is performed. After this alignment,
As shown in FIG. 2B, after the CCD camera 43 is shifted in the horizontal direction, the heating tool 44 is lowered to a position where the Sn plating lead 35 and the Au bump 36 contact with a predetermined pressure, and the heating is performed for a predetermined time. Thus, flip-chip connection between the Sn plating lead 35 and the Au bump 36 is performed.

As described above, according to the TAB tape and the semiconductor device using the same according to the first embodiment, the surface opposite to the light-impermeable polyimide film 30 having the Sn plating leads 35 formed on one surface. The TAB tape 40 was formed while leaving the reinforcing copper layer 31 at a predetermined position.
1, the strength of the TAB tape 40 is increased, and the transportability at the time of flip chip connection can be improved.
Thermal deformation due to heating in the flip chip connection step can be eliminated. As a result, the yield and productivity of products (semiconductor devices) can be improved.

FIG. 3 is a configuration diagram of a TAB tape and a semiconductor device using the same according to a second embodiment of the present invention.

When forming the TAB tape (TAF tape for COF) shown in FIG. 3, first, as shown in FIG.
Reinforced copper layer 51 on one side so that the light transmittance is not impaired.
Are bonded to form a light-transmissive casting tape 52. This tape 52 has a thickness of 25 μm and a width of 35 m, for example, having an L value of 54 plated with copper at a thickness of 8 μm on one side.
m, and a Kapton EN (registered trademark) tape having a water absorption of 1.7% is used.

Next, as shown in (b), an adhesive 53 having a water absorption of 1.2% was applied to the light-transmitting polyimide film 50 for 8 μm.
m, a perforation hole 54 is punched out as shown in FIG.
Then, an electrolytic copper foil 55 having a maximum roughness of 1.5 μm and a thickness of 9 μm is bonded and cured.

Next, as shown in (d), a copper foil 55 is formed in a predetermined wiring pattern (two types having a lead pitch of 34 μm and 50 μm) by a photoresist etching process, and further, electroless plating of Sn is performed. Then, the Sn-plated lead 56 is formed, and the TAB tape 60 is formed while the reinforcing copper layer 51 is left in a predetermined portion.

Then, the same (d) is attached to the TAB tape 60.
LSI chip 58 on which Au bump 57 shown in FIG.
As shown in (e), the Sn plating lead 56 and Au
The alignment with the bump 57 is performed to perform flip-chip connection, and the sealing resin 59 is potted so that underfill is not hindered.

The flip-chip connection is performed in the same manner as described with reference to FIG. That is, the LSI chip 58 is mounted on the stage, and the Au plating 57 is provided on the Au bump 57 with the Sn plating lead 5 above the LSI chip 58.
6 with the TAB tape 60 arranged so that they face each other, and a CCD combined with a heating tool from above the reinforcing copper layer 51.
The positions of the Sn plating leads 56 and the Au bumps 57 are adjusted by the camera while transmitting the light transmitting casting tape 52. Next, the heating tool is connected to the reinforcing copper layer 5.
By applying pressure to 1 and heating at about 100 ° C. for about 3 seconds, flip-chip connection between the Sn plating lead 56 and the Au bump 57 is performed.

As described above, according to the TAB tape of the second embodiment and the semiconductor device using the same, the surface opposite to the light-transmitting polyimide film 50 in which the Sn plating lead 56 is formed on one surface is formed. The reinforcing copper layer 51 is formed so that the light transmittance is not impaired, and the TAB tape 60 in which the perforation holes 54 are formed is formed. The transportability at the time of connection can be improved, and thermal deformation due to heating in the flip chip connection step can be eliminated. As a result, the yield and productivity of products (semiconductor devices) can be improved.

In order to compare the peel strength of the wiring,
A TAB tape for COF was produced in the same manner using a Kapton EN having a thickness of 38 μm, which was sputtered and then copper-plated at 8 μm on both sides. In this combination, after forming the pattern wiring (two types of lead pitches of 34 μm and 50 μm), S
When n plating is applied, penetration of Sn (separation due to lifting of lead wiring) is observed, and particularly, the lead pitch is 34 μm.
In the case of m, the entire surface was peeled off and did not satisfy the quality of the TAB tape. However, the TAB tape 60 of the second embodiment did not show Sn penetration, and the one with a lead pitch of 34 μm was particularly good.

Further, it has been found that this TAB tape 60 is suitable for a TAB tape for COF of fine wiring (pitch: 50 μm or less) having high insulation resistance and excellent migration resistance.

Also, in the above embodiment, the solder resist is not applied to the upper surface of the wiring with a flip chip type TAB tape having no device hole, but as shown in FIG. 4, the solder resist 62 or the photo solder resist is used. It is also applicable when applying.

Further, the TAB for COF of the above embodiment is used.
The structure of the tape is a single-sided potting or transfer mold type, which has high insulation resistance and excellent migration resistance.
μm) CSP (Chip Scale Package) and tape BGA
(Ball Grid Array) flip chip type and wire bonding type CSP.

[0036]

As described above, according to the present invention,
A lead of a predetermined pattern is formed on a light-impermeable insulating tape, and a copper foil is formed on a predetermined portion of a surface opposite to a surface on which the lead is formed, thereby forming a tape carrier for a semiconductor device. Further, the leads of the semiconductor device tape carrier and the bumps of the semiconductor chip are set to face each other, and both the leads and bumps in the facing state are imaged by the image pickup means, and alignment is performed to connect them. I made it. As a result, it is possible to improve the transportability of the present semiconductor device tape carrier at the time of flip-chip connection and to eliminate thermal deformation during heating in the manufacturing process, thereby increasing the yield and production of products (semiconductor devices). Performance can be improved.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a TAB tape and a semiconductor device using the same according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of a method of manufacturing a semiconductor device using the semiconductor device tape carrier of the present invention.

FIG. 3 is a configuration diagram of a TAB tape and a semiconductor device using the same according to a second embodiment of the present invention.

FIG. 4 is a configuration diagram of a TAB tape and a semiconductor device using the same according to another embodiment.

FIG. 5 is an explanatory diagram of a method for manufacturing a semiconductor device using a conventional semiconductor device tape carrier.

[Explanation of symbols]

10 Insulating film 12,35,56 Sn plating lead 14,40,60 TAB tape 16,36,57 Au bump 18, 37, 58 LSI chips 20, 41 stages 22,44 Heating tools 24, 42, 43 CCD camera 30 Light-impermeable polyimide film 31, 51 Reinforced copper layer 32 Light-impermeable casting tape 33,53 adhesive 34 Copper foil 38,59 underfill 50 Light transmitting polyimide film 52 Light transmitting casting tape 54 perforation hole 55 Electrolytic copper foil 62 Photoresist

Claims (6)

[Claims] 1. A tape carrier for a semiconductor device having leads of a predetermined pattern on an insulating tape, wherein a reinforcing copper layer for suppressing a decrease in transportability is provided on a predetermined portion of the insulating tape opposite to a surface on which the leads are formed. A tape carrier for a semiconductor device, wherein the tape carrier is formed. 2. The tape carrier for a semiconductor device according to claim 1, wherein the insulating tape is light-impermeable. 3. A tape carrier for a semiconductor device having leads of a predetermined pattern on a light-transmitting insulating tape, wherein copper is provided on a surface of the insulating tape opposite to a surface on which the leads are formed so as not to lose transparency. A tape carrier for a semiconductor device, wherein a foil is formed. 4. A tape carrier having a predetermined pattern of leads on a first surface of an insulating tape and a reinforcing copper layer for suppressing a decrease in transportability on a second surface thereof; A semiconductor device comprising: a semiconductor chip which is flip-chip connected via a bump. 5. A tape carrier having a predetermined pattern of leads on a first surface of a light-transmissive insulating tape and a copper foil on a second surface of the tape so as not to impair the transparency. A semiconductor device comprising: a semiconductor chip which is flip-chip connected via the lead of a carrier and a bump. 6. A tape carrier having a light-impermeable insulating tape having a lead of a predetermined pattern on a first surface and a reinforcing copper layer for suppressing a decrease in transportability on a second surface of the insulating tape. An arrangement step of arranging the bumps of the semiconductor chip in a facing state; and performing an alignment for connecting both the leads and the bumps in the facing state in the arranging step while imaging both of the leads and the bumps with imaging means A method for manufacturing a semiconductor device, comprising: a positioning step.