JP2003347302A5 - - Google Patents
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- Publication number
- JP2003347302A5 JP2003347302A5 JP2003120807A JP2003120807A JP2003347302A5 JP 2003347302 A5 JP2003347302 A5 JP 2003347302A5 JP 2003120807 A JP2003120807 A JP 2003120807A JP 2003120807 A JP2003120807 A JP 2003120807A JP 2003347302 A5 JP2003347302 A5 JP 2003347302A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13378202A | 2002-04-26 | 2002-04-26 | |
| US10/133782 | 2002-04-26 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010137862A Division JP2010232676A (en) | 2002-04-26 | 2010-06-17 | Copper silicide passivation for improved reliability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003347302A JP2003347302A (en) | 2003-12-05 |
| JP2003347302A5 true JP2003347302A5 (en) | 2006-06-01 |
Family
ID=22460275
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003120807A Pending JP2003347302A (en) | 2002-04-26 | 2003-04-25 | Copper silicide passivation for improving reliability |
| JP2010137862A Withdrawn JP2010232676A (en) | 2002-04-26 | 2010-06-17 | Copper silicide passivation for improved reliability |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010137862A Withdrawn JP2010232676A (en) | 2002-04-26 | 2010-06-17 | Copper silicide passivation for improved reliability |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP2003347302A (en) |
| KR (1) | KR101005434B1 (en) |
| GB (1) | GB2390742B (en) |
| TW (1) | TWI278963B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101028811B1 (en) * | 2003-12-29 | 2011-04-12 | 매그나칩 반도체 유한회사 | Method of forming a dual damascene pattern in a semiconductor device |
| US20050233555A1 (en) * | 2004-04-19 | 2005-10-20 | Nagarajan Rajagopalan | Adhesion improvement for low k dielectrics to conductive materials |
| US7229911B2 (en) * | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| JP2007109736A (en) * | 2005-10-11 | 2007-04-26 | Nec Electronics Corp | Semiconductor device and method of manufacturing same |
| JP5582727B2 (en) | 2009-01-19 | 2014-09-03 | 株式会社東芝 | Semiconductor device manufacturing method and semiconductor device |
| US8884441B2 (en) * | 2013-02-18 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process of ultra thick trench etch with multi-slope profile |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103840A (en) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | Dry etching |
| JPH04192527A (en) * | 1990-11-27 | 1992-07-10 | Toshiba Corp | Semiconductor device |
| US5447887A (en) * | 1994-04-01 | 1995-09-05 | Motorola, Inc. | Method for capping copper in semiconductor devices |
| JP3661366B2 (en) * | 1997-09-04 | 2005-06-15 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
| JPH11191556A (en) * | 1997-12-26 | 1999-07-13 | Sony Corp | Manufacture of semiconductor device and forming method of copper or copper alloy pattern |
| US6303505B1 (en) * | 1998-07-09 | 2001-10-16 | Advanced Micro Devices, Inc. | Copper interconnect with improved electromigration resistance |
| JP2000058544A (en) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | Semiconductor device and manufacture of the same |
| JP2000195820A (en) * | 1998-12-25 | 2000-07-14 | Sony Corp | Forming method of metal nitride film and electronic device using the same |
| JP2001185549A (en) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | Method for manufacturing semiconductor device |
| JP3643540B2 (en) * | 2000-02-21 | 2005-04-27 | 株式会社日立製作所 | Plasma processing equipment |
| US6406996B1 (en) * | 2000-09-30 | 2002-06-18 | Advanced Micro Devices, Inc. | Sub-cap and method of manufacture therefor in integrated circuit capping layers |
| JP4535629B2 (en) * | 2001-02-21 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| JP2003045960A (en) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor device and method of manufacturing same |
-
2003
- 2003-04-25 GB GB0309476A patent/GB2390742B/en not_active Expired - Fee Related
- 2003-04-25 KR KR1020030026307A patent/KR101005434B1/en active IP Right Grant
- 2003-04-25 JP JP2003120807A patent/JP2003347302A/en active Pending
- 2003-04-25 TW TW092109732A patent/TWI278963B/en not_active IP Right Cessation
-
2010
- 2010-06-17 JP JP2010137862A patent/JP2010232676A/en not_active Withdrawn