JP2003347230A - Method of manufacturing compound semiconductor and semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method by which a III-V compound semiconductor having a large nitrogen composition can be manufactured easily, and to provide a semiconductor device manufactured by the method. <P>SOLUTION: In the method of manufacturing the III-V compound semiconductor containing at least nitrogen atoms as group V atoms by the vapor growth method by using one or more kinds of gases containing nitrogen atoms as raw materials, the sum of flow ratios of the nitrogen atom-containing gases other than a nitrogen gas to the total flow rate of all gases supplied into a reaction chamber is made larger than the flow ratios of all other gases to the total flow rate. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a III-V compound semiconductor containing at least a nitrogen atom as a group V atom, and a semiconductor device. The present invention relates to a method for producing a compound semiconductor and a semiconductor element, which are devised to increase the nitrogen composition.

[0002]

2. Description of the Related Art As a laser for optical communication, a 1.3 μm band is used.
Alternatively, the 1.55 μm band is used. Especially 1.3
The μm band laser is used for short-distance optical communication, but at present, InGa which is a group III-V compound semiconductor is used.
AsP / InP-based materials are mainly used. However, this material system requires the use of an InP substrate, which increases the substrate cost. In addition, the conduction band discontinuity (band offset amount) at the hetero barrier in the active layer is small, and electrons are not activated. Since it is easy to leak out of the layer, deterioration of characteristics during high-temperature operation is a problem. Normally, a method such as cooling with a Peltier element is used to stably operate even at high temperatures, but this causes a problem that device cost is increased and power consumption is increased.

On the other hand, Jpn. J. Appl. Phys.
Vol. 35 (1996) Pt. 1, No. 11, p.
5711 has II other than InGaAsP / InP-based materials.
As a group IV compound semiconductor, GaInNAs obtained by adding nitrogen to GaInAs has been proposed as a material that can be epitaxially grown on GaAs and covers a wavelength region of 1.3 μm to 1.55 μm.

When In is added to GaAs, the lattice constant of GaInAs becomes larger than that of GaAs because In has a larger atomic radius than that of Ga. The same lattice constant can be used.

Further, GaInNAs is made of GaInAs.
Unlike many III-V compound semiconductors such as P, G
Even if N having a smaller atomic radius than As is added to aAs, the band gap wavelength can be shortened. Therefore, by properly designing the composition of In and N, GaAs
A group III-V compound semiconductor having a band gap wavelength of 1.3 μm or 1.55 μm lattice-matched to the above is obtained.

As a crystal growth method of GaInNAs, there are a molecular beam epitaxy (MBE) method, a metal organic vapor phase epitaxy (MOVPE) method, and the like. To manufacture a low-cost device, a large number of substrates are simultaneously crystallized. An MOVPE method that can grow is advantageous. In the MOVPE method, a gas such as hydrogen or nitrogen is passed through an organometallic compound maintained at a constant temperature, and the raw material is supplied in a gaseous state together with a large amount of a carrier gas composed of hydrogen or nitrogen into a reaction vessel.
The crystal is grown by thermal decomposition.

[0007] Since GaInNAs is a material having large immiscibility, it is difficult to increase the nitrogen composition.

Therefore, as a conventional method of manufacturing a compound semiconductor, in order to increase the nitrogen composition, a non-equilibrium is grown at a low temperature to grow, and the compound is easily decomposed even at a low temperature.
A method using an organic nitrogen compound such as dimethylhydrazine (S. Sato et. Al. Jpn. J. App.
l. Phys. Vol. 36 (1997) Pt. 1, N
o. 5A, p. 2671) and a method using a nitrogen carrier gas (A. Ougazzaden et. Al. J.
pn. J. Appl. Phys. Vol. 38 (199
9) Pt. 1, No. 2B, p. 1019).

Here, the carrier gas is a gas in which the flow rate ratio of the target gas to the total flow rate of the gas supplied into the reaction vessel is larger than the flow rate ratio to the total flow rate of all other supply gases. Hereinafter, the word carrier gas is used in the same definition.

[0010]

However, in the conventional method of manufacturing a compound semiconductor, GaIn has good crystallinity.
To obtain NAs, the nitrogen composition is limited to about 1 to 2%, and there is a problem that the nitrogen composition is small.

This is because, even when an organic nitrogen compound is used, the crystal growth temperature is low, so that the decomposition efficiency of the nitrogen raw material is still low, and the number of reactive species formed by decomposition of the nitrogen raw material gas in the reaction vessel is sufficiently large. This is because the absorption of nitrogen atoms into the crystal is poor, and the nitrogen atoms once incorporated into the crystal are re-evaporated.

For this reason, GaInNA having a large nitrogen composition is used.
In order to obtain an s crystal, a crystal growth method that increases the number of reactive species for decomposition of the nitrogen source gas in the reaction vessel is required.

Further, in a semiconductor element (semiconductor light emitting device) using GaInNAs manufactured by a conventional manufacturing method, if an emission wavelength of 1.3 μm is to be obtained, the nitrogen composition cannot be increased. It is necessary to increase the composition, and in that case, there is a problem that the distortion amount becomes too large and the characteristics are deteriorated. In this sense, a crystal growth method for increasing the nitrogen composition of GaInNAs is required.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a compound semiconductor manufacturing method capable of easily manufacturing a group III-V compound semiconductor having a large nitrogen composition, and a semiconductor device manufactured by using the manufacturing method.

[0015]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above object, and the invention of claim 1 is as follows.
In a method of producing a group III-V compound semiconductor containing at least a nitrogen atom as a group V atom by gas phase growth using one or more types of gas containing a nitrogen atom as a raw material, a total flow rate of a gas supplied into a reaction vessel This is a method for producing a compound semiconductor in which the sum of the flow ratios of gases containing nitrogen atoms other than nitrogen gas is larger than the total flow ratio of all other gases.

According to a second aspect of the present invention, the III-V compound semiconductor contains at least a gallium atom as a group III atom, contains at least both a nitrogen atom and an arsenic atom as a group V atom, and has a composition of a nitrogen atom. 2. The method according to claim 1, wherein the composition of the compound semiconductor is smaller than that of arsenic atoms.

According to a third aspect of the present invention, the gas containing a nitrogen atom other than the nitrogen gas contains at least one kind of gas selected from a compound consisting of both a nitrogen atom and a hydrogen atom. Or a method for producing a compound semiconductor according to item 2.

According to a fourth aspect of the present invention, there is provided the method of manufacturing a compound semiconductor according to the third aspect, wherein the compound composed of only the nitrogen atom and the hydrogen atom is ammonia or hydrazine.

According to a fifth aspect of the present invention, there is provided the method of manufacturing a compound semiconductor according to the first or second aspect, wherein the gas containing a nitrogen atom other than the nitrogen gas contains at least one kind of gas selected from organic nitrogen compounds. is there.

According to a sixth aspect of the present invention, the gas containing a nitrogen atom other than the nitrogen gas includes one or more kinds of gases selected from compounds composed only of both a nitrogen atom and a hydrogen atom, and an organic nitrogen compound. 3. The method for producing a compound semiconductor according to claim 1, wherein the method includes both of at least one gas selected from the group consisting of:

According to a seventh aspect of the present invention, there is provided a semiconductor device provided with a group III-V compound semiconductor containing a nitrogen atom, which is produced by using the method for producing a compound semiconductor according to any one of the first to sixth aspects. It is.

[0022]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a sectional view showing a structure of a semiconductor device manufactured by using a compound semiconductor manufacturing method according to a preferred embodiment of the present invention.

As shown in FIG. 1, a semiconductor device 1 according to the present invention is mainly used for a light emitting device and a light receiving device. An undoped GaAs buffer layer 3 is provided on a Si-doped n-type GaAs substrate 2. And an undoped GaInNA having a large nitrogen composition is formed on the GaAs buffer layer 3.
An s layer 4 is formed, and an undoped GaAs cap layer 5 is formed on the GaInNAs layer 4.

In this semiconductor device 1, a GaAs substrate 2 is placed in a reaction vessel of a conventional MOVPE apparatus by, for example, a metalorganic vapor phase epitaxy (MOVPE) method as a vapor phase growth method, and gas is supplied into the reaction vessel. The GaAs substrate 2 is supplied and crystals are sequentially grown on the GaAs substrate 2.

In order to produce the GaInNAs layer 4 having a large nitrogen composition, as described above, a crystal growth method is required to increase the number of reactive species of the nitrogen source gas in the reaction vessel. In order to increase the number of reactive species for decomposition of the nitrogen source gas in the reaction vessel, there are a method using a nitrogen source gas having a higher decomposition efficiency and a method of increasing the supply amount of the nitrogen source gas itself. If the supply amount of the nitrogen source gas itself is increased, even if the decomposition efficiency of the nitrogen source gas is not so good, the number of reactive species of the nitrogen source gas in the reaction vessel can be increased as a result.

The method for producing a compound semiconductor according to the present invention is directed to a method for manufacturing a compound semiconductor comprising at least a nitrogen atom as a group V atom.
The GaInNAs layer 4 as a group V compound semiconductor is
This is a method in which one or more types of gas containing a nitrogen atom are used as a raw material by the VPE method. In this method, the sum of the flow ratios of the gases containing nitrogen atoms is made larger than the flow ratio of all the other gases to the total flow.

Here, as the gas containing a nitrogen atom other than the nitrogen gas, a compound consisting of both a nitrogen atom and a hydrogen atom can be selected. These compounds are difficult to decompose, but by maximizing the flow rate ratio to the total flow rate of the gas supplied into the reaction vessel, it is possible to generate many decomposition reaction species of the nitrogen source gas as a result.

As a compound consisting only of both a nitrogen atom and a hydrogen atom, for example, ammonia or hydrazine is used.

The gas containing a nitrogen atom other than the nitrogen gas may be an organic nitrogen compound. These organic nitrogen compounds generally have lower decomposition temperatures than compounds composed of only nitrogen atoms and hydrogen atoms, so that more nitrogen-containing gaseous decomposition reactants can be generated.

As the organic nitrogen compound, for example, monomethylhydrazine, 1,1-dimethylhydrazine, tertiary butyl hydrazine or tertiary butylamine is used.

Further, the gas containing nitrogen atoms other than the nitrogen gas includes at least one gas selected from compounds consisting of both nitrogen atoms and hydrogen atoms, and at least one gas selected from organic nitrogen compounds. Two or more types of gases including both of these gases may be used.

As described above, the method for manufacturing a compound semiconductor according to the present invention uses a gas containing nitrogen atoms other than nitrogen gas as a carrier gas, instead of using a carrier gas consisting of hydrogen or nitrogen as in the prior art. Since the carrier gas is used as the nitrogen raw material itself and the carrier gas is supplied in a large amount into the reaction vessel, it is possible to effectively increase the number of decomposed reactive species of the nitrogen raw material gas in the reaction vessel.

Therefore, a group III-V compound semiconductor having a large nitrogen composition can be easily manufactured, and as a result,
A semiconductor element having an active layer or the like made of a III-V compound semiconductor having a large nitrogen composition can be easily manufactured.

This semiconductor device has a large nitrogen composition III.
Since the semiconductor device includes the -V group compound semiconductor, the strain amount does not need to be so large, and the performance becomes higher. For example, when a light emitting element or a light receiving element is manufactured as a semiconductor element, it can be used not only for 1.3 μm band optical communication but also for 1.55 μm band optical communication.

Further, the present invention provides a method for producing a compound semiconductor capable of easily increasing the nitrogen composition. Therefore, as described later in Example 3, it is usually difficult to increase the nitrogen composition. Among the III-V compound semiconductors containing at least gallium atoms as atoms and containing at least both nitrogen atoms and arsenic atoms as group V atoms, the nitrogen composition is smaller than the arsenic composition, that is, the arsenic atoms contained in the unit volume. The effect of the present invention can be further obtained in a method for manufacturing a compound semiconductor in which the ratio of the number of nitrogen atoms to the number is greater than 0 and smaller than 1.

[0037]

(Embodiment 1) An example of a method of manufacturing the semiconductor device 1 described with reference to FIG. 1 will be described in more detail.

As shown in FIG. 1, the semiconductor element 1 is made of Si
On the doped n-type GaAs substrate 2 by MOVPE method,
An undoped GaAs buffer layer 3 having a thickness of 500 nm;
An undoped GaInNAs layer 4 having a thickness of 500 nm and an undoped GaAs cap layer 5 having a thickness of 100 nm are grown in this order.

To manufacture layers other than the GaInNAs layer 4,
The total flow rate was 4 slm using a hydrogen carrier gas. The pressure in the reaction vessel was 66.7 hPa (50 torr).
In r), the temperature was maintained at 650 ° C. to grow crystals.
The raw materials of Ga and As are trimethylgallium (T
MGa) and arsine (AsH ₃ ), and were fed into the reaction vessel by hydrogen gas.

Ammonia was used as a carrier gas for producing the GaInNAs 4 layer. The pressure inside the reaction vessel is 6
Growth was performed at 6.7 hPa (50 torr) and at a temperature of 550 ° C. Ga, In, each raw material of As ethyltrimethoxysilane gallium (TEGa), trimethyl indium (TMIn), using AsH _3, was fed with nitrogen gas until the reaction vessel. The actual supply amounts of TEGa, TMIn, and AsH ₃ are each set to 0.37 sccm (1.7 × 10 ^−5).
mol / min), 0.019 sccm (8.5 × 10
^-7 mol / min), 10 sccm (4.5 × 10 ^-4 m)
ol / min). Further, the total flow rate of the ammonia carrier gas was 3.59 slm, and the total flow rate of the gas including the other raw material gas and the nitrogen gas for feeding the raw material gas into the reaction vessel was 4 slm.

At this time, the ratio of the sum of the partial pressures of the group V source gas to the sum of the partial pressures of the group III source gas in the reaction vessel (V / II
I ratio) is about 9250, and the ratio of the partial pressure of the nitrogen source gas to the sum of the partial pressures of the group V source gas is 0.997.

The ratio of the flow rate of the gas containing nitrogen atoms other than the nitrogen gas to the total flow rate of the gas supplied into the reaction vessel is about 0.9, which is larger than the flow rate ratio to the total flow rate of the other component gases. .

When the sample after growth was analyzed by a secondary ion mass spectrometer (SIMS), the GaInNAs layer 4 was analyzed.
Had an N concentration of 8.3 × 10 ²⁰ cm ⁻³ . This corresponds to about 4% as a nitrogen composition. From this result and the result of the X-ray diffraction measurement, the In composition was found to be about 10%.

Further, at room temperature, photoluminescence (P
L) Upon measurement, a spectrum as shown in FIG. 2 was obtained. FIG. 2 shows a spectrum diagram of photoluminescence measurement of the semiconductor device 1 with the horizontal axis representing wavelength (μm) and the vertical axis representing PL intensity (arbitrary unit). This peak wavelength was 1.27 μm.

In the PL measurement, light such as a laser having a photon energy larger than the band gap energy of the sample is excited on the sample, and a two-dimensional image of light emission accompanying an inter-band transition in the active layer is obtained. This is to judge whether the luminous efficiency is good or not.

As described above, by using ammonia as a carrier gas, GaInNAs having a high nitrogen composition of about 4% can be obtained.
It was confirmed that the layer 4 was easily obtained, and that it was a good crystal.

Embodiment 2 Next, another example of the method of manufacturing the semiconductor device 1 described with reference to FIG. 1 will be described in more detail.

In Example 2, an ammonia carrier gas and 1,1-dimethylhydrazine (UDMHy) as an organic nitrogen compound were used as a nitrogen source.

For the production of layers other than the GaInNAs layer 4,
The total flow rate was 4 slm using a hydrogen carrier gas. Ma
The pressure in the reaction vessel was 66.7 hPa (50 torr).
In r), growth was performed while maintaining the temperature at 650 ° C. Ga,
The raw material of As is TMGa, AsH _Three With hydrogen gas
Into the reaction vessel.

In manufacturing the GaInNAs layer 4, ammonia was used as a carrier gas. The pressure inside the reaction vessel is 6
The crystal was grown at 6.7 hPa (50 torr) and at a temperature of 550 ° C. Ga, using In, each raw material of As TEGa, TMIn, the AsH _3, was fed with nitrogen gas until the reaction vessel. TEGa, TMIn, A
The actual supply of sH ₃ was 0.37 sccm (1.
7 × 10 ⁻⁵ mol / min), 0.029 sccm
(1.3 × 10 ⁻⁶ mol / min), 10 sccm
(4.5 × 10 ⁻⁴ mol / min). In addition, UDMHy is used as a nitrogen source at 49 sccm (2.2
× 10 ^-3 mol / min) was supplied into the reaction vessel together with the nitrogen gas. In addition, the ammonia carrier gas was 3.0
9slm, and the total flow rate of the gas including the other source gas and the nitrogen gas for feeding the source gas into the reaction vessel is 4s.
lm.

At this time, the ratio of the sum of the partial pressures of the group V source gas to the sum of the partial pressures of the group III source gas in the reaction vessel (V / II
I ratio) is about 7900, and the ratio of the partial pressure of the nitrogen source gas to the sum of the partial pressures of the group V source gas is 0.997.

The ratio of the total flow rate of the gas containing nitrogen atoms other than the nitrogen gas to the total flow rate of the gas supplied into the reaction vessel is about 0.78, which is smaller than the flow rate ratio of the other component gases to the total flow rate. large.

When the grown sample was analyzed by SIMS, the N concentration of the GaInNAs layer 4 was 1.0 × 10 ²¹ c.
m ^-3 . This corresponds to about 5% as a nitrogen composition. From this result and the result of the X-ray diffraction measurement, the In composition was found to be about 15%. Furthermore, when the PL was measured at room temperature, the peak wavelength was 1.30 μm.

As described above, by using ammonia as a carrier gas and further adding an organic nitrogen compound such as UDMHy to the inside of the reaction vessel, the nitrogen composition can be further increased as compared with the case where only the ammonia carrier is used. GaInN, which is possible and has a high nitrogen composition of about 5%
It was confirmed that the As layer 4 could be easily obtained, and that it was a good crystal.

Third Embodiment In a third embodiment, the GaInNAs layer 4 described in the second embodiment is applied to an active layer of a semiconductor laser.

FIG. 3 is a sectional view showing the structure of a semiconductor laser as a semiconductor device according to the present invention.

As shown in FIG. 3, a semiconductor laser 31 according to the present invention comprises a Si-doped n-type GaAs buffer layer 33 having a thickness of 500 nm and a thickness of 1500 nm formed on a Si-doped n-type GaAs substrate 32 by MOVPE. Si
Doped n-type Al _0.75 Ga _0.25 As lower cladding layer 34,
50 nm thick undoped GaAs lower optical guide layer 35
d, undoped Ga _0.85 In _0.15 N _{0.05 with} a thickness of 30 nm
As _0.95 active layer 36, undoped GaAs 50 nm thick
Upper light guide layer 35u, 1500 nm thick Mg-doped p-type Al _0.75 Ga _0.25 As upper cladding layer 37, thickness 2
A 0 nm Mg-doped p-type GaAs contact layer 38 is grown in this order, and the upper cladding layer 3 is formed by etching.
7, a contact layer 38 is formed in a stripe shape, and an AuGeNi lower electrode 39 is formed on the lower surface of the GaAs substrate 32.
The AuZn upper electrode 40 is formed on the upper surface of the aAs contact layer 38.
Is formed.

At this time, Ga _0.85 In _0.15 N _0.05 As
_For the fabrication other than the _0.95 active layer 36, use TMG as a Ga material.
a using trimethyl aluminum (T
MAl), AsH ₃ was used as an As material, and each material was fed into the reaction vessel by hydrogen. The carrier gas supplied into the reaction vessel was hydrogen gas, and the total flow rate was 4 slm. The pressure in the reaction vessel was 66.
The crystal was grown while keeping the temperature at 7 hPa (50 torr) and the temperature at 650 ° C.

Ga _0.85 In _0.15 N _0.05 As _0.95 Active layer 3
The fabrication of 6 is the same as that of the GaInNAs layer 4 described in the second embodiment. That is, TEGa and In as Ga raw materials
Using TMIn as a raw material and AsH ₃ as an As raw material,
The supply flow rate was set to 0.37 sccm (1.7 × 10 ^−5).
mol / min), 0.029 sccm (1.3 × 10
^-6 mol / min), 10 sccm (4.5 × 10 ^-4 m)
ol / min). Ammonia gas is used as a carrier gas in an amount of 3.09 slm, which is used as a nitrogen material. In addition, UDMHy is 49 sccm (2.2 × 10 ⁻³ m
ol / min) was also supplied into the reaction vessel. The total flow rate of the gas supplied into the reaction vessel was 4 slm, the pressure inside the reaction vessel was 66.7 hPa (50 torr), and the temperature was 550.
° C.

At this time, the ratio of the sum of the partial pressures of the group V source gas to the sum of the partial pressures of the group III source gas in the reaction vessel (V / II
I ratio) is about 7900, and the ratio of the partial pressure of the nitrogen source gas to the sum of the partial pressures of the group V source gas is 0.997.

The ratio of the total flow rate of the gas containing nitrogen atoms other than the nitrogen gas to the total flow rate of the gas supplied into the reaction vessel is about 0.78, which is smaller than the flow rate ratio of the other component gases to the total flow rate. large.

The epitaxial wafer thus grown was processed into a ridge-type Fabry-Perot laser having a stripe width of 2 μm and a cavity length of 300 μm to produce a semiconductor laser 31, and its laser characteristics were evaluated. The semiconductor laser 31
Oscillation could be confirmed at room temperature, and the oscillation wavelength was about 1.30 μm.

Thus, the G produced by the present invention
a _0.85 In _0.15 N _0.05 As _0.95 It was confirmed that the active layer 36 was a good crystal. Further, the semiconductor laser 31
Since the active layer 36 has a Ga _0.85 In _0.15 N _0.05 As _0.95 active layer 36 having a large nitrogen composition, it was also confirmed that the strain amount was small and the performance was higher than that of the related art. Further, a semiconductor laser having an oscillation wavelength of 1.55 μm can be manufactured in the same manner as in the third embodiment.

In the above embodiment, an example was described in which ammonia was used as the carrier gas. However, the present invention is characterized in that a gas containing nitrogen atoms other than nitrogen is used as the carrier gas. It is not limited to. Hydrazine consisting of only nitrogen and hydrogen atoms can be used as a carrier gas, an organic nitrogen compound such as UDMHy can be used as a carrier gas, or a plurality of nitrogen compounds can be used as a carrier gas. In any case, an effect is obtained that a III-V compound semiconductor having a large nitrogen composition can be easily manufactured.

The GaInNAs layer 4 and Ga _0.85 In
_0.15 N _0.05 As _0.95 Ga, I when forming the active layer 36
The materials of n and As are also TEGa and TMI, respectively.
n and AsH ₃ , respectively,
Other materials such as Ga, triethylindium (TEIn), and tertiary butyl arsine (TBAs) may be used.

In Example 3, a GaInNAs crystal produced by the method for producing a compound semiconductor according to the present invention
Although the description has been given of the example applied to the edge-emitting Fabry-Perot semiconductor laser, the application examples are not limited to the edge-emitting Fabry-Perot semiconductor laser, but the edge-emitting distributed feedback semiconductor laser, the surface-emitting semiconductor laser, and the light-emitting diode Even when applied to light-emitting elements such as light-receiving elements such as photodiodes, other solar cells and electronic devices,
The effect of higher performance than before can be obtained without making the distortion amount too large.

[0067]

As is apparent from the above description,
According to the present invention, the following excellent effects are exhibited.

(1) By using a gas containing a nitrogen atom other than nitrogen as a carrier gas, a III-V compound semiconductor having a large nitrogen composition can be easily obtained. As a result, 1.3 μm can be obtained without increasing the distortion amount so much.
A crystal having a band gap wavelength of m can be obtained.

(2) A crystal having a bandgap wavelength of 1.55 μm can be easily produced.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of a semiconductor device according to the present invention.

FIG. 2 is a spectrum diagram of the semiconductor device shown in FIG. 1 obtained by photoluminescence measurement.

FIG. 3 is a sectional view showing a structure of a semiconductor laser according to the present invention.

[Explanation of symbols]

Reference Signs List 1 semiconductor element 2 Si-doped n-type GaAs substrate 3 undoped GaAs buffer layer 4 undoped GaInNAs layer (III containing nitrogen atom
-V group compound semiconductor layer) 5 Undoped GaAs cap layer

Continuation of front page    (72) Inventor Katsuya Akimoto             1-6-1 Otemachi, Chiyoda-ku, Tokyo Sun             Standing wire company F term (reference) 4K030 AA09 AA13 AA17 BA08 BA11                       BA38 CA04 CA12 FA10 JA05                       JA06 LA13                 5F045 AA04 AB14 AB18 AC01 AC08                       AC09 AC12 AD10 AE23 BB12                       CA12 DA53 DA63                 5F073 AA13 AA45 CA17 DA05

Claims (7)

[Claims] 1. A method for producing a group III-V compound semiconductor containing at least a nitrogen atom as a group V atom by a vapor phase growth method using at least one kind of gas containing a nitrogen atom as a raw material. Wherein the sum of the flow ratios of the gas containing nitrogen atoms other than the nitrogen gas to the total flow rate of the gas to be processed is made larger than the flow ratio of the total flow rate of all other gases. 2. The group III-V compound semiconductor contains at least a gallium atom as a group III atom, at least a nitrogen atom and an arsenic atom as a group V atom, and the composition of the nitrogen atom is smaller than that of the arsenic atom. Claim 1
The method for producing a compound semiconductor according to the above. 3. The gas containing a nitrogen atom other than the nitrogen gas contains at least one kind of gas selected from a compound consisting of both a nitrogen atom and a hydrogen atom.
Or the method for producing a compound semiconductor according to 2. 4. The method for producing a compound semiconductor according to claim 3, wherein the compound composed of only both nitrogen atoms and hydrogen atoms is ammonia or hydrazine. 5. The method according to claim 1, wherein the gas containing a nitrogen atom other than the nitrogen gas includes at least one gas selected from organic nitrogen compounds. 6. The gas containing a nitrogen atom other than the nitrogen gas is selected from one or more gases selected from compounds composed only of both nitrogen atoms and hydrogen atoms, and organic nitrogen compounds. The method for producing a compound semiconductor according to claim 1, wherein the method includes both of at least one kind of gas. 7. A semiconductor device comprising a group III-V compound semiconductor containing a nitrogen atom, which is manufactured by using the method for manufacturing a compound semiconductor according to claim 1. .