JP2003345012A - Photosensitive composition and electronic parts using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a pattern with high resolution, high sensitivity and good dimensional accuracy. <P>SOLUTION: A photosensitive composition is provided which comprises (A) a compound having an addition-polymerizable group or a polymer having an addition-polymerizable group and (B) a photo-radical polymerization initiator represented by formula (1). <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a photosensitive composition, a pattern manufacturing method using the same, and an electronic component.

[0002]

2. Description of the Related Art In recent years, in the semiconductor industry, an organic material excellent in heat resistance such as polyimide resin is used as an interlayer insulating material which has been conventionally used by using an inorganic material by utilizing its characteristics. Has been done. However, forming a circuit pattern on a semiconductor integrated circuit or a printed circuit board is complicated by a complicated process such as forming a resist material on the surface of a base material, exposing a predetermined portion, removing unnecessary portions by etching, and cleaning the substrate surface. Since the pattern formation is carried out through all the steps, it is desired to develop a heat-resistant photosensitive material which can be used as an insulating material while leaving the resist of a necessary portion as it is after the pattern formation by exposure and development.

As these materials, for example, heat-resistant photosensitive materials based on photosensitive polyimide, photosensitive polybenzoxazole, cyclized polybutadiene, etc. have been proposed. Particularly, photosensitive polyimide is excellent in heat resistance. In particular, it has attracted attention because it is easy to remove impurities. In recent years, as the integration of semiconductors has become higher, processing rules have become smaller and smaller, and higher resolution has been required. More recently, from the viewpoint of shortening the process, a one-mask process has been introduced in which the obtained polyimide pattern is used as a mask as it is and the underlying passivation film is etched. In this case, it is desired that the polyimide pattern has small dimensional accuracy and small dimensional variation as a mask. Further, it is desired that the sensitivity of the photosensitive composition is high in order to increase the throughput at the time of exposure.

[0004]

DISCLOSURE OF THE INVENTION The present invention has a small dimensional variation and a high resolution in the processing of polyimide such as an interlayer insulating film for a multi-layer wiring board, an α-ray shielding film for a semiconductor memory device, and a buffer coat film. , A highly sensitive photosensitive composition is provided.

The present invention also provides a manufacturing method capable of manufacturing a relief pattern having a high dimensional accuracy, a high resolution and a good shape. Further, the present invention provides an electronic component having a relief pattern layer having high dimensional accuracy, high resolution, and good shape.

[0006]

The present invention provides the following 1) to 5).
Regarding 1) (A) a compound having an addition polymerizable group, or a polymer having an addition polymerizable group, and (B) a general formula (1)

[Chemical 1] [In Formula (1), R¹ Is a phenyl group (however, carbon number
1 to 6 alkyl group, phenyl group, halogen atom, -O
R⁸ , -SR⁹ Or -N (R^Ten) (R¹¹) 1 or more
May be replaced with. ), An alkyl group having 1 to 20 carbon atoms
(However, when the alkyl group has 2 to 20 carbon atoms, the main chain carbon is
Having one or more oxygen atoms between elementary atoms and / or
Alternatively, it may be substituted with one or more hydroxyl groups. ), Carbon number
5-8 cycloalkyl group, 2-20 carbon alkano
Yl group, benzoyl group (provided that the alkyl group has 1 to 6 carbon atoms)
Group, phenyl group, -OR⁸ , -SR⁹ Or -N (R
^Ten) (R¹¹) May be substituted with one or more of ), Carbon number
2 to 12 alkoxycarbonyl groups (however, alkoxy
When the number of carbon atoms in the alkoxy group is 2 to 11, the alkoxy group is mainly
Has one or more oxygen atoms between chain carbon atoms, and
/ Or may be substituted with one or more hydroxyl groups. ), F
Enoxycarbonyl group (provided that the alkyl group has 1 to 6 carbon atoms)
Group, phenyl group, halogen atom, -OR⁸ Or-N
(R^Ten) (R¹¹) May be substituted with one or more of ),
Ano group, nitro group, -CON (R^Ten) (R ¹¹), Carbon number 1
~ 4 haloalkyl group, -S (O) m-R¹²(However, R¹²
Represents an alkyl group having 1 to 6 carbon atoms, m is 1 or 2
is there. ), -S (O) m-R¹³(However, R¹³Has 6 to 6 carbon atoms
12 represents an aryl group, an alkyl group having 1 to 12 carbon atoms
And m is 1 or 2. ),carbon
C1-C6 alkoxysulfonyl group, C6-C10
Aryloxysulfonyl group or diphenylphosphine
Represents a noyl group; R² Is alkanoyl having 2 to 12 carbon atoms
Group (provided that at least one halogen atom or cyano group
It may be replaced. ), The double bond is a carbonyl group
Unconjugated alkenoyl group having 4 to 6 carbon atoms, benzo
Yl group (provided that the alkyl group having 1 to 6 carbon atoms, halogen atom)
Child, cyano group, -OR⁸ , -SR⁹ Or-N
(R^Ten) (R¹¹) May be substituted with one or more of
Yes. ), An alkoxycarbonyl group having 2 to 6 carbon atoms,
Is a phenoxycarbonyl group (provided that it has 1 to 6 carbon atoms.
Even if it is substituted with one or more of a kill group or halogen atom
Good. ) Is shown; R³ , R^Four , R^Five , R⁶ And R⁷ Is
Hydrogen atom, halogen atom, carbon number 1 to 12 independently of each other
Alkyl group, cyclopentyl group, cyclohexyl group,
Or a phenyl group (however, -OR⁸ , -SR⁹ Or
-N (R^Ten) (R¹¹) May be substituted with one or more of
Yes. ), Benzyl group, benzoyl group, having 2 to 12 carbon atoms
Alkanoyl group, C2-C12 alkoxycarbonyl
Group (provided that the alkoxy group has 2 to 11 carbon atoms)
In this case, the alkoxyl group has at least one acid between main chain carbon atoms.
With elementary atoms and / or with one or more hydroxyl groups
It may be replaced. ), A phenoxycarbonyl group, -O
R⁸(However, R⁸ Is in or to the phenyl ring
5-membered ring or 6 with one of the carbon atoms in the substituent
-A member ring may be formed. ), -SR⁹(However, R⁹ Is
Carbon atoms in the phenyl ring or in substituents on the phenyl ring
Forming a 5-membered or 6-membered ring with one of the children
Good. ), -S (O) R⁹(However, R⁹ Is in the phenyl ring
And one of the carbon atoms in the substituent on the phenyl ring
Together, they may form a 5-membered ring or a 6-membered ring.
Yes. ), -SO₂ R⁹(However, R⁹ Is in the phenyl ring
Together with one of the carbon atoms in the substituent to the phenyl ring,
A 5-membered ring or a 6-membered ring may be formed. ),Also
Is -N (R^Ten) (R¹¹) (However, R^TenAnd / or R¹¹
Is the carbon in the phenyl ring or in the substituent to the phenyl ring
Form a 5- or 6-membered ring with one of the elementary atoms
You may. ) And R³ , R^Four , R^Five , R⁶ Oh
And R⁷ At least one of -OR⁸ , -SR⁹ Or
-N (R^Ten) (R¹¹) Is; R⁸ Is hydrogen atom, carbon number 1
~ 12 alkyl group, substituted C2-6 alkyl
Group (provided that the substituent is a hydroxyl group, a mercapto group, a cyano group)
Group, an alkoxyl group having 1 to 4 carbon atoms, an alkoxy group having 3 to 6 carbon atoms
Lucenyloxy group, 2-cyanoethoxy group, carbon number 4 to
2- (alkoxycarbonyl) ethoxy group of 7, carbon number
2-5 alkylcarbonyloxy groups, phenylcarbo
Nyloxy group, carboxyl group or C2-C5
Consists of one or more alkoxycarbonyl groups. }, The main chain
2 to 6 carbon atoms having one or more oxygen atoms between carbon atoms
Alkyl group, alkanoyl group having 2 to 8 carbon atoms,-(C
H₂ CH₂ O) nH (where n is an integer of 1 to 20)
It ), An alkenyl group having 3 to 12 carbon atoms, and 3 to 6 carbon atoms
Alkenoyl group, cyclohexyl group, phenyl group of
However, it may be a halogen atom or an alkyl group having 1 to 12 carbon atoms.
May be substituted with an alkoxyl group having 1 to 4 carbon atoms
Yes. ), A phenylalkyl group having 7 to 9 carbon atoms, -Si
(R¹⁴) R (R¹⁵)₃-r (however, R¹⁴Is a carbon number of 1 to 8
R is a group, R¹⁵Represents a phenyl group, and r is 1 to 3
Is an integer. ) Is shown; R⁹ Is hydrogen atom, carbon number 1 to
12 alkyl groups, C 3-12 alkenyl groups,
Chlohexyl group, substituted alkyl group having 2 to 6 carbon atoms
{However, the substituent is a hydroxyl group, a mercapto group, a cyano group,
Alkoxyl group having 1 to 4 carbon atoms, alkene having 3 to 6 carbon atoms
Nyloxy group, 2-cyanoethoxy group, having 4 to 7 carbon atoms
2- (alkoxycarbonyl) ethoxy group, carbon number 2
5 alkylcarbonyloxy group, phenylcarbonyl
An oxy group, a carboxyl group or an alkane having 2 to 5 carbon atoms
Consists of one or more coxycarbonyl groups. }, Main chain carbon
Having one or more oxygen or sulfur atoms between atoms
C2-C12 alkyl group, phenyl group (however, halo
Gen atom, alkyl group having 1 to 12 carbon atoms or carbon number
It may be substituted with 1 to 4 alkoxyl groups. ),carbon
Represents a phenylalkyl group of the numbers 7 to 9; R^TenAnd R¹¹
Are each independently a hydrogen atom or an alkyl group having 1 to 12 carbon atoms.
Group, a C2-C4 hydroxyalkyl group, a C2-C2
10 alkoxyalkyl groups, alkene having 3 to 5 carbon atoms
Group, C5-12 cycloalkyl group, C7-
9 phenylalkyl group, phenyl group (however, carbon number 1
~ 12 alkyl group or C1-4 alkoxy
It may be substituted with one or more of the radicals. ), Carbon number 2-3
Alkanoyl group, alkenoyl group having 3 to 6 carbon atoms,
A benzoyl group or R^TenAnd R¹¹Together
And an alkylene group having 2 to 6 carbon atoms (however, between main chain carbon atoms
More than one oxygen atom or -NR⁸ Have-or
And / or hydroxyl group, alkoxyl having 1 to 4 carbon atoms
Group, alkanoyloxy group having 2 to 4 carbon atoms or benzene
It may be substituted with one or more of the zoyloxy groups. )
You ] A feeling of having a photoradical polymerization initiator represented by
Photogenic composition. 2) In the present invention, the above (B) photoradical polymerization initiator is
Expression (2)

[Chemical 2] With respect to the photosensitive composition represented by. 3) The present invention also relates to a photosensitive composition, wherein the component (A) is a polyimide precursor having an addition polymerizable group. 4) The present invention also relates to a method for producing a pattern, which comprises irradiating the coating film of the photosensitive composition with an actinic ray and developing and removing an unirradiated portion. 5) The present invention also relates to an electronic component having a pattern layer obtained by the method for producing a pattern.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION As the component (A) in the present invention, various compounds can be mentioned. The compound having an addition-polymerizable group is a compound having an addition-polymerizable group such as a vinyl group, an acryloyl group and a methacryloyl group, and is 10 at normal pressure.
Those having a boiling point of 0 ° C. or higher are preferable. When the boiling point at atmospheric pressure is lower than 100 ° C., when removing the solvent contained in the system by drying or irradiating with actinic rays,
This is because the addition-polymerizable compound volatilizes and is not preferable in terms of characteristics. Further, the addition-polymerizable compound is preferably soluble in a commonly used organic solvent in order to form a uniform composition with the photoinitiator and the like.

The addition-polymerizable compound is a compound obtained by condensing a polyhydric alcohol and an α, β-unsaturated carboxylic acid, for example, ethylene glycol di (meth) acrylate (meaning diacrylate or dimethacrylate, the same applies hereinafter. ), Triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, trimethylolpropane di (meth) acrylate,
Trimethylolpropane tri (meth) acrylate, 1,
2-Propylene glycol di (meth) acrylate, di (1,2-propylene glycol) di (meth) acrylate, tri (1,2-propylene glycol) di (meth) acrylate, tetra (1,2-propylene glycol) di (Meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, dimethylaminopropyl (meth) acrylate, diethylaminopropyl (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6 -Hexanediol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, styrene, divinylbenzene,
4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl (meth) acrylate, 1,3-
(Meth) acryloyloxy-2-hydroxypropane,
Examples thereof include methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, and the like, and two or more kinds of them may be combined.

A polymer having an addition-polymerizable group is
It is a polymer having an addition-polymerizable carbon-carbon double bond such as a vinyl group, an acryloyl group, and a methacryloyl group, and various types thereof can be mentioned. Examples thereof include polyimide precursors such as polyamic acid ester, polyamic acid amide, and polyamic acid having an addition polymerizable group, polyesters, vinyl polymers, acrylic polymers, and the like. It is preferable that the polymer has a weight average molecular weight of 10,000 to 700,000. The weight average molecular weight can be measured by gel permeation chromatography and a standard polystyrene calibration curve.

In addition to the compound or polymer having an unsaturated polymerizable group, a high molecular weight organic polymer having no unsaturated polymerizable group may be contained. This makes it possible to improve properties such as adhesion to a substrate, chemical resistance, and film property. This high molecular weight organic polymer, from the viewpoint of photocurability, the total amount of the high molecular weight organic polymer and the addition polymerizable compound or polymer 100 parts by weight, preferably 0.1 to 80 parts by weight, 20 It is more preferable that the amount is ˜80 parts by mass. The weight average molecular weight of the polymer is 10,000 to 7
Those having 00,000 are preferred.

As such an organic polymer, polyester (polyhydric alcohol (for example, diethylene glycol,
Triethylene glycol, tetraethylene glycol,
(Trimethylolpropane, neopentyl glycol, etc.)
And polycarboxylic acids (eg copolyesters made from terephthalic acid, isophthalic acid, sebacic acid, adipic acid, etc.), vinyl polymers (methacrylic acid, acrylic acid, methacrylic acid or alkyl esters of acrylic acid, eg methyl (meth)) Acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate, 2-
Homopolymers or copolymers of vinyl monomers such as dimethylaminoethyl (meth) acrylate and 2-ethylhexyl (meth) acrylate), polyformaldehyde, polyurethane, polycarbonate, polyamide, cellulose ester (methylcellulose, ethylcellulose, etc.), polyamic acid, polyamide Examples thereof include acid esters and polyamic acid amides.

The polyimide precursor in the component (A) is
Tetracarboxylic acid or a derivative thereof and a diami compound,
It can be synthesized by reacting in an organic solvent used as necessary. Examples of the tetracarboxylic acid include pyromellitic acid, oxydiphthalic acid, 3,
3 ', 4,4'-benzophenone tetracarboxylic acid,
3,3 ', 4,4'-biphenyltetracarboxylic acid,
1,2,5,6-naphthalene tetracarboxylic acid, 2,
3,6,7-naphthalene tetracarboxylic acid, 1,4
5,8-naphthalenetetracarboxylic acid, 2,3,5,6
-Pyridine tetracarboxylic acid, 3,4,9,10-perylene tetracarboxylic acid, sulfonyldiphthalic acid, m-terphenyl-3,3 ', 4,4'-tetracarboxylic acid,
p-terphenyl-3,3 ', 4,4'-tetracarboxylic acid, 1,1,1,3,3,3-hexafluoro-2,
2-bis (2,3- or 3,4-dicarboxyphenyl) propane, 2,2-bis (2,3- or 3,4-dicarboxyphenyl) propane, 2,2-bis {4'-
(2,3- or 3,4-dicarboxyphenoxy) phenyl} propane, 1,1,1,3,3,3-hexafluoro-2,2-bis {4 '-(2,3- or 3, 4-dicarboxyphenoxy) phenyl} propane, the following general formula (3)

[Chemical 3] Examples of the aromatic tetracarboxylic acid such as tetracarboxylic acid represented by are used singly or in combination of two or more kinds.

Examples of the derivative of tetracarboxylic acid include tetracarboxylic acid, tetracarboxylic dianhydride, tetracarboxylic acid chloride and the like. From the viewpoint of reactivity, the reaction partner of the diamine is preferably tetracarboxylic dianhydride when synthesizing the polyamic acid and tetracarboxylic acid chloride when synthesizing the polyamic acid ester.

The diamine compound is not particularly limited and is, for example, 4,4'- (or 3,4'-, 3,3 ').
-, 2,4'-, 2,2'-) diaminodiphenyl ether, 4,4'- (or 3,4'-, 3,3'-, 2,
4'-, 2,2 '-) diaminodiphenylmethane, 4,
4'- (or 3,4'-, 3,3'-, 2,4'-,
2,2 '-) diaminodiphenyl sulfone, 4,4'-
(Or 3,4'-, 3,3'-, 2,4'-, 2,2 '
-) Diaminodiphenyl sulfide, paraphenylenediamine, metaphenylenediamine, p-xylylenediamine, m-xylylenediamine, o-tolidine, o-tolidine sulfone, 4,4'-methylene-bis- (2,6)
-Diethylaniline), 4,4'-methylene-bis-
(2,6-diisopropylaniline), 2,4-diaminomesitylene, 1,5-diaminonaphthalene, 4,4 ′
-Benzophenone diamine, bis- {4- (4'-aminophenoxy) phenyl} sulfone, 1,1,1,3
3,3-hexafluoro-2,2-bis (4-aminophenyl) propane, 2,2-bis {4- (4'-aminophenoxy) phenyl} propane, 3,3'-dimethyl-4,4 ' -Diaminodiphenylmethane, 3,3 ',
5,5'-tetramethyl-4,4'-diaminodiphenylmethane, bis {4- (3'-aminophenoxy) phenyl} sulfone, 2,2-bis (4-aminophenyl)
Examples thereof include propane and aliphatic diamines such as diaminopolysiloxane, which may be used alone or in combination of two or more kinds.

The organic solvent used in the above reaction is preferably a polar solvent which completely dissolves the produced polyimide precursor, and examples thereof include N-methyl-2-pyrrolidone, N, N.
-Dimethylacetamide, N, N-dimethylformamide, dimethylsulfoxide, tetramethylurea, hexamethylphosphoric triamide, γ-butyrolactone and the like can be mentioned.

Besides the polar solvent, ketones, esters, lactones, ethers, halogenated hydrocarbons, hydrocarbons and the like can be used. For example, acetone, diethyl ketone, methyl ethyl ketone, methyl isobutyl. Ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane,
Examples thereof include chlorobenzene, o-dichlorobenzene, hexane, heptane, octane, benzene, toluene and xylene. These organic solvents are used alone or in combination of two or more.

The molecular weight of the polyimide precursor of the present invention is not particularly limited, but the weight average molecular weight is 10,000 to 1,000.
A value of 00 is preferable in terms of heat resistance and solubility.

The method for producing the polyimide precursor of the present invention is not particularly limited, and various known methods can be used. In the component (A) of the present invention, the polymer having an addition polymerizable group is preferably a polyimide precursor having an addition polymerizable group, specifically, the addition polymerizable group and an amino group or a quaternized salt thereof. A compound having a group of, a polyimide precursor in the form of an ionic bond between a carboxyl group of a polyamic acid and an amino group or a group portion of a quaternized salt thereof, a side chain through a covalent bond such as an ester bond or an amide bond. Examples thereof include a polyimide precursor having an addition polymerizable double bond. An alcohol compound is used to introduce an addition-polymerizable group into a polyimide precursor through an ester bond. The alcohol compound is preferably an unsaturated alcohol compound such as hydroxymethyl acrylate, hydroxymethyl methacrylate, hydroxyethyl acrylate, hydroxyethyl methacrylate, hydroxypropyl acrylate, hydroxypropyl methacrylate, hydroxybutyl acrylate, and hydroxybutyl methacrylate, among which an alkyl chain A hydroxyalkyl acrylate or hydroxyalkyl methacrylate having 1 to 10 carbon atoms is preferably used. These may be used alone or in combination of two or more.

The reaction of each component can be carried out by a known method. That is, the thionyl chloride method, DCC method, isoimide method and the like are known.

The polyimide of the present invention can be synthesized by ring-closing the polyimide precursor. The ring closure can be usually performed by heating. The heating conditions are not particularly limited, but the heating temperature is 80 to 450.
The temperature is preferably set to ° C. If this heating temperature is lower than 80 ° C., the ring-closing reaction tends to be slow, and if it exceeds 450 ° C., the polymer produced tends to deteriorate. The heating time is preferably 10 to 100 minutes. If this heating time is less than 10 minutes, the ring-closing reaction tends to be slow, and if it exceeds 100 minutes, the polymer produced tends to deteriorate and workability tends to decrease.

The photosensitive resin composition of the present invention generally contains a photopolymerization initiator. As the photopolymerization initiator, the oxime compound represented by the component (B) has sensitivity,
It is preferable in terms of resolution and dimensional accuracy. The amount of these oxime compounds used is not particularly limited, but the solid content excluding the oxime compounds in the photosensitive composition of the present invention is 10
It is preferably 0.1 to 10.0 parts by mass with respect to 0 parts by mass,
More preferably, it is 0.1 to 5.0 parts by mass. If it is less than 0.1 parts by mass, the photosensitive property tends to be deteriorated, and if it exceeds 10.0 parts by mass, the storage stability tends to be deteriorated. Further, other photopolymerization initiators may be used together with the oxime compound. For example, Michler's ketone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, 2-t-butylanthraquinone, 2-
Ethylanthraquinone, 4,4-bis (diethylamino |) benzophenone, acetophenone, benzophenone, thioxanthone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenyl ketone, 2-methyl- [4- (methylthio) phenyl] -2-morpholino-1-propanone, benzyl,
Diphenyl disulfide, phenanthrenequinone, 2-
Isopropylthioxanthone, riboflavin tetrabutyrate, 2,6-bis (p-diethylaminobenzal)
-4-Methyl-4-azacyclohexanone, N-ethyl-N- (p-chlorophenyl) glycine, N-phenyldiethanolamine, 2- (o-ethoxycarbonyl)
Oxyimino-1,3-diphenylpropanedione, 1
-Phenyl-2- (o-ethoxycarbonyl) oxyiminopropan-1-one, 3,3,4,4-tetra (t
-Butylperoxycarbonyl) benzophenone, 3,
3'-carbonylbis (7-diethylaminocoumarin), bis (cyclopentadienyl) -bis [2,6-
Difluoro-3- (pyridin-1-yl) phenyl] titanium and the like can be mentioned, and these can be used alone or in combination of two or more kinds.

The amount of the photopolymerization initiator used is preferably 0.01 to 30 parts by weight, and more preferably 0.05 to 10 parts by weight, based on 100 parts by weight of the total amount of the polyimide precursor. . If this amount is less than 0.01 parts by weight, the photosensitivity tends to be poor, and if it exceeds 30 parts by weight, the mechanical properties of the film tend to be poor.

Further, the photosensitive resin composition may contain a radical polymerization inhibitor or a radical polymerization inhibitor in order to enhance the stability during storage. Examples of the radical polymerization inhibitor or the radical polymerization inhibitor include p-
Methoxyphenol, diphenyl-p-benzoquinone,
Benzoquinone, hydroquinone, pyrogallol, phenothiazine, resorcinol, orthodinitrobenzene,
Paradinitrobenzene, metadinitrobenzene, phenanthraquinone, N-phenyl-1-naphthylamine, N
-Phenyl-2-naphthylamine, cuperone, phenothiazine, 2,5-toluquinone, tannic acid, parabenzylaminophenol, nitrosamines and the like. These are used alone or in combination of two or more.

The radical polymerization inhibitor or radical polymerization inhibitor is preferably used in an amount of 0.01 to 30 parts by weight, based on 100 parts by weight of the total amount of the polyimide precursor.
More preferably, the amount is 0.05 to 10 parts by weight. If this amount is less than 0.01 part by weight, the stability during storage tends to be poor, and if it exceeds 30 parts by weight, the photosensitivity and the mechanical properties of the film tend to be poor.

The photosensitive resin composition of the present invention can be obtained in a solution state by dissolving the polyimide precursor and other components in a solvent. Examples of the solvent include N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphoramide, tetramethylsulfone, γ-butyrolactone, cyclohexanone, cyclopenta. An aprotic polar solvent such as non-proton is used alone or in combination of two or more kinds.

The photosensitive resin composition of the present invention may further contain an organic silane compound, an aluminum chelate compound, a silicon-containing polyamic acid, etc. in order to enhance the adhesion of the cured film to the substrate. Examples of the organic silane compound include γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-methacryloxypropyltrimethoxysilane and the like. Examples of the aluminum chelate compound include tris (acetyl acetate) aluminum, acetyl acetate aluminum diisopropylate, and the like.

The photosensitive resin composition of the present invention is applied onto a substrate such as a silicon wafer, a metal substrate or a ceramic substrate by a dipping method, a spray method, a screen printing method, a spin coating method or the like, and most of the solvent is used. A coating film having no tackiness can be obtained by heating and drying. The thickness of this coating film is not particularly limited, but from the viewpoint of circuit characteristics and the like, it is 4 to 50 μm.
Is more preferable, 6 to 40 μm is more preferable, and 10 to 40 μm is particularly preferable,
It is extremely preferable that the thickness is 20 to 35 μm. After exposing this coating film in a pattern by irradiating it with actinic rays or actinic rays through a mask on which a desired pattern is drawn, develop and dissolve the unexposed area with an appropriate developing solution to remove it. Thereby, a desired relief pattern can be obtained.

This coating film is exposed to a pattern by irradiating it with actinic rays or actinic rays through a mask on which a desired pattern is drawn, and then the unexposed area or the exposed area is developed with an appropriate developing solution and dissolved. , The desired pattern can be obtained.

The photosensitive resin composition of the present invention is suitable for exposure to i-line monochromatic light using an i-line stepper or the like, but the actinic ray or actinic ray to be irradiated is not limited to i-ray. For example, a contact / proximity exposure machine using an ultra-high pressure mercury lamp, a mirror projection exposure machine, a g-ray stepper, other ultraviolet rays, visible light sources, X-rays, electron beams, etc. can also be used.

As the developing solution, for example, as an organic solvent developing solution, a good solvent (N, N-dimethylformamide, N,
N-dimethylacetamide, N-methyl-2-pyrrolidone, etc.), a mixed solvent of the good solvent and a poor solvent (lower alcohol, ketone, water, aromatic hydrocarbon, etc.), and an alkaline aqueous solution. As the alkaline aqueous solution,
For example, a tetramethylammonium hydroxide aqueous solution, a triethanolamine aqueous solution, etc. may be mentioned. After development, it is preferable to rinse with water or a poor solvent as needed to make the pattern stable. Further, by heating this relief pattern, a patterned high heat resistant polyimide can be formed.

The heating temperature at this time is preferably 150 to 500.degree. C., more preferably 200 to 400.degree. When the heating temperature is less than 150 ° C,
The mechanical properties and thermal properties of the polyimide film tend to deteriorate, and when the temperature exceeds 500 ° C., the mechanical properties and thermal properties of the polyimide film tend to deteriorate.

The heating time at this time is 0.1 to 10
It is preferable to set the time. If the heating time is less than 0.1 hours, the mechanical properties and thermal properties of the polyimide film tend to deteriorate, and if it exceeds 10 hours, the mechanical properties and thermal properties of the polyimide film tend to deteriorate.

The photosensitive resin composition of the present invention can be used for electronic parts such as semiconductor devices and multilayer wiring boards. Specifically, the surface protection film, interlayer insulating film and multilayer wiring board of semiconductor devices can be used. It can be used for forming an interlayer insulating film and the like. The electronic component of the present invention is not particularly limited except that it has a surface protective film and an interlayer insulating film formed by using the composition, and can have various structures.

An example of a manufacturing process of a semiconductor device will be described below as an example of the electronic component of the present invention. FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure. In the figure, a semiconductor substrate such as a Si substrate having a circuit element is covered with a protective film 2 such as a silicon oxide film except a predetermined portion of the circuit element, and a first conductor layer is formed on the exposed circuit element. . A film 4 of resin or the like as an interlayer insulating film is formed on the semiconductor substrate by a spin coating method or the like (step (a)).

Next, a photosensitive resin layer 5 of chlorinated rubber type, phenol novolac type or the like is formed on the interlayer insulating film 4 by a spin coating method, and a predetermined portion of the interlayer insulating film 4 is exposed by a known photo-etching technique. The window 6A is provided so as to do so (step (b)). The interlayer insulating film 4 in the window 6A is selectively etched by a dry etching means using a gas such as oxygen or carbon tetrafluoride to open the window 6B. Then, the photosensitive resin layer 5 is completely removed using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the window 6B (step (c)).

Further, by using a known photo-etching technique, the second
The conductor layer 7 is formed, and the electrical connection with the first conductor layer 3 is completed (step (d)). When forming a multi-layer wiring structure having three or more layers, each layer can be formed by repeating the above steps.

Next, the surface protective film 8 is formed. In the example of this figure, the surface protective film is applied with the photosensitive resin composition by a spin coating method, dried, and irradiated with light from above a mask on which a pattern for forming a window 6C is drawn on a predetermined portion, and then an alkaline aqueous solution. To develop a pattern and heat to form a relief pattern resin film. This resin film protects the conductor layer from external stress, α rays, etc.,
The obtained semiconductor device has excellent reliability. In the above example, it is also possible to form the interlayer insulating film using the photosensitive resin composition of the present invention.

The photosensitive resin composition of the present invention can be used for electronic parts such as semiconductor devices and multilayer wiring boards. Specifically, the surface protective film, interlayer insulating film, and multilayer wiring board of semiconductor devices can be used. It can be used for forming an interlayer insulating film and the like. The electronic component of the present invention is not particularly limited except that it has a surface protective film and an interlayer insulating film formed by using the composition, and can have various structures.

An example of a manufacturing process of a semiconductor device will be described below as an example of the electronic component of the present invention. FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure. In the figure, a semiconductor substrate such as a Si substrate having a circuit element is covered with a protective film 2 such as a silicon oxide film except a predetermined portion of the circuit element, and a first conductor layer is formed on the exposed circuit element. . A film 4 of resin or the like as an interlayer insulating film is formed on the semiconductor substrate by a spin coating method or the like (step (a)).

Next, a photosensitive resin layer 5 of chlorinated rubber type, phenol novolac type or the like is formed on the interlayer insulating film 4 by a spin coating method, and the interlayer insulating film 4 at a predetermined portion is exposed by a known photo-etching technique. The window 6A is provided so as to do so (step (b)). The interlayer insulating film 4 in the window 6A is selectively etched by a dry etching means using a gas such as oxygen or carbon tetrafluoride to open the window 6B. Then, the photosensitive resin layer 5 is completely removed using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the window 6B (step (c)).

Further, by using a known photo-etching technique, the second
The conductor layer 7 is formed, and the electrical connection with the first conductor layer 3 is completed (step (d)). When forming a multi-layer wiring structure having three or more layers, each layer can be formed by repeating the above steps.

Next, the surface protective film 8 is formed. In the example of this figure, the surface protective film is applied with the photosensitive resin composition by a spin coating method, dried, and irradiated with light from above a mask on which a pattern for forming a window 6C is drawn on a predetermined portion, and then an alkaline aqueous solution. To develop a pattern and heat to form a relief pattern resin film. This resin film protects the conductor layer from external stress, α rays, etc.,
The obtained semiconductor device has excellent reliability. In the above example, it is also possible to form the interlayer insulating film using the photosensitive resin composition of the present invention.

[0043]

EXAMPLES The present invention will be described below with reference to examples. Example 1 Oxydiphthalic acid dianhydride ODPA was placed in a four-neck separable flask equipped with a stirrer, a nitrogen inlet tube, a condenser tube and a thermometer.
(25 mmol), twice the molar amount of hydroxyethyl methacrylate with respect to the acid component, and a catalytic amount (1 mmol) of 1,8-diazabicyclo [5,4,0] undec-7-ene.
25 mmol of hydroquinone was added and dissolved in N, N-dimethylacetamide (DMAc). After heating at 60 to 70 ° C for 1 hour, the mixture was stirred at room temperature overnight. While cooling in an ice bath, thionyl chloride in a 2.4-fold molar amount with respect to the acid component was added dropwise, and then the mixture was stirred for 1 hour. While cooling, 4,4'-diamino-2,2'-dimethylbiphenyl DMAP (25 mmol), 2.5 molar amount of pyridine, 0.25 mmol of hydroquinone DMAc
The solution was added dropwise and then stirred at room temperature for 30 minutes. The solid content was reprecipitated in distilled water and washed with a mix rotor. After suction filtration, it was dried under reduced pressure at 40 ° C. to obtain a powdery polyimide precursor. This ODPA-HEMA / DMAP
N-methylpyrrolidone (NMP) (solid content 3% by weight)
0-40%) to obtain a polyimide precursor solution. Next, the total amount of the polyimide precursor is set to 1, and tetraethylene glycol diacrylate (TE
GDA) 0.2, Michler's ketone (MK) 0.0
04,1,2-octanedione-1- [4- (phenylthio) phenyl] -2- (O-benzoyl) oxime 0.0
2 (OPSO), 2-mercaptobenzoxazole 0.0
After 1 was added and dissolved, a uniform photosensitive resin composition solution was obtained. The resulting photosensitive resin composition solution is filtered through a filter,
A silicon wafer was dropped and spin-coated. A hot plate was used to heat at 85 ° C. for 100 seconds and at 95 ° C. for 100 seconds to form a 10 μm coating film. This coating film was used as a pattern mask, exposed by an i-line stepper, and then paddle-developed using an organic solvent containing γ-butyrolactone as a main component, and a good pattern was obtained. Furthermore, this was heated at 350 ° C. for 60 minutes in a nitrogen atmosphere to obtain a polyimide relief pattern. The relief pattern has a resolution of 4 microns, a sensitivity of 150 mJ / cm ² , and a dimensional accuracy of 3σ =
Filled to 0.6 μm. The resolution was evaluated as the minimum size of a developable through hole using a through hole test pattern. Further, the sensitivity was defined as the exposure amount with which the above resolution was accurately obtained. The dimensional accuracy 3σ was obtained from the standard deviation σ ^{1/2 of the} average value by measuring the 10 μm hole pattern at 9 points on the wafer surface.

Example 2 4,4'-Diamino-2,2'-dimethylbiphenyl DMAP (25 mmol) was added to a four-necked separable flask equipped with a stirrer, a nitrogen inlet tube, a condenser tube and a thermometer to add NMP. (Solid content 20% by weight). Oxydiphthalic dianhydride ODPA in an equimolar amount to the diamine was added and stirred at room temperature to obtain a polyimide precursor solution. Next, N, N-dimethylaminopropyl methacrylate is 0.65 and Michler's ketone (MK) is 0.004 in a weight ratio with respect to the whole polymer.
1,2-octanedione-1- [4- (phenylthio) phenyl] -2- (O-benzoyl) oxime (OPSO) 0.
After adding and dissolving 02,2-mercaptobenzoxazole 0.01, a uniform photosensitive resin composition solution was obtained. Thereafter, a coating film was formed by the same method as in Example 1, and the relief pattern obtained by exposure, heating after exposure at 110 ° C. for 60 seconds, development, and heating had a resolution of 4 microns, sensitivity of 200 mJ / cm ² , dimensional accuracy of 3σ = 0.8 μm is filled.

Example 3 The acid anhydride component of the polyimide precursor obtained in Example 1 was changed to 9,
A polyimide precursor solution was obtained by using the same method except that 9′-dimethyl-2,3,6,7-xanthenetetracarboxylic dianhydride MMXDA was used. A photosensitive resin solution was prepared in the same manner as in Example 1 to prepare a coating film. Exposure, development,
The relief pattern obtained by heating at 400 ° C under nitrogen has a resolution of 4 microns, a sensitivity of 120 mJ / cm ² , and a dimensional accuracy of 3σ.
= 0.5 μm was satisfied.

Example 4 The acid anhydride component of the polyimide precursor obtained in Example 2 was changed to 9,
A polyimide precursor solution was obtained by using the same method except that 9′-dimethyl-2,3,6,7-xanthenetetracarboxylic dianhydride MMXDA was used. A photosensitive resin solution was prepared in the same manner as in Example 2 to prepare a coating film. The relief pattern obtained by exposure, post-exposure heating, development, and heating at 400 ° C. under nitrogen satisfied a resolution of 4 μm, a sensitivity of 150 mJ / cm ² , and a dimensional accuracy of 3σ = 0.6 μm.

Example 5 The diamine component of the polyimide precursor obtained in Example 3 was changed to 3,
A polyimide precursor solution was obtained in the same manner except that 5-diaminobenzoic acid was used. A photosensitive resin solution was prepared in the same manner as in Example 1 to prepare a coating film. 2.38 after exposure
The relief pattern obtained by developing with% tetramethylammonium hydroxide TMAH and heating at 350 ° C. under nitrogen satisfied a resolution of 6 microns, a sensitivity of 200 mJ / cm ² , and a dimensional accuracy of 3σ = 1.2 μm.

Comparative Example 1 1,2-octanedione-1- [4- in Example 1
In addition to using (phenylthio) phenyl] -2- (O-benzoyl) oxime (OPSO) 0.06, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime (PDO) was used. In the same manner as above, a photosensitive resin solution was prepared and a coating film was prepared. This coating film was pattern-masked, exposed with an i-line stepper, and then paddle-developed using an organic solvent containing N-methylpyrrolidone as a main component. Furthermore, this was heated at 350 ° C. for 60 minutes in a nitrogen atmosphere to obtain a polyimide relief pattern. The relief pattern has a resolution of 6 microns and a sensitivity of 400 mJ /
cm ² , dimensional accuracy 3σ = 0.8 μm, and the sensitivity was lowered.

Comparative Example 2 1,2-octanedione-1- [4- in Example 2
Instead of (phenylthio) phenyl] -2- (O-benzoyl) oxy (OPSO), 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime (P
A photosensitive resin solution was prepared and a coating film was prepared by the same method except that 0.06 of DO) was used. This coating film was pattern-masked, exposed with an i-line stepper, and then paddle-developed using an organic solvent containing N-methylpyrrolidone as a main component. Furthermore, this was heated at 350 ° C. for 60 minutes in a nitrogen atmosphere to obtain a polyimide relief pattern. The relief pattern has a resolution of 6 microns and a sensitivity of 450 mJ / cm.
² , the dimensional accuracy was 3σ = 1.0 μm, and the sensitivity was lowered.

[0050]

[Table 1]

[0051]

The oxime compound of the present invention is a photopolymerization initiator having a higher sensitivity than conventional ones. The photosensitive resin composition of the present invention can form a pattern with high resolution, high sensitivity and dimensional accuracy. Further, according to the method for producing a pattern of the present invention, a pattern having high sensitivity, high resolution and good shape can be produced by i-line exposure, and good development can be realized with an alkaline aqueous solution, and chemical resistance and heat resistance can be partially achieved. A polyimide film having excellent properties can be formed. Further, the electronic component of the present invention is excellent in reliability because it has the above pattern.

[Brief description of drawings]

FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Protective film, 3 ... 1st conductor layer, 4 ... Interlayer insulating film layer, 5 ... Photosensitive resin layer,
6A, 6B, 6C ... Window, 7 ... Second conductor layer, 8 ... Surface protective film layer.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) // C07C 323/47 H01L 21/30 502R F term (reference) 2H025 AA01 AA02 AB17 AC01 AD01 BC42 BC69 CA01 CA07 FA03 FA15 FA29 4H006 AA03 AB40 TA04 TB14 4J011 QA03 QA06 QA09 QA13 QA17 QA19 QB18 QC09 SA61 SA65 UA01 UA03 UA04 UA06 VA01 WA01 4J027 AD04 BA05 BA08 BA13 BA14 BA19 BA20 BA28 CB10 CC03 CC08 CC05 CC06 CC06 CC10 CC05 CC06

Claims (6)

[Claims] 1. A compound (A) having an addition-polymerizable group, or
A polymer having a polymerizable group, and (B) the general formula (1) [Chemical 1] [In Formula (1), R¹ Is a phenyl group (however, carbon number
1 to 6 alkyl group, phenyl group, halogen atom, -O
R⁸ , -SR⁹ Or -N (R^Ten) (R¹¹) 1 or more
May be replaced with. ), An alkyl group having 1 to 20 carbon atoms
(However, when the alkyl group has 2 to 20 carbon atoms, the main chain carbon is
Having one or more oxygen atoms between elementary atoms and / or
Alternatively, it may be substituted with one or more hydroxyl groups. ), Carbon number
5-8 cycloalkyl group, 2-20 carbon alkano
Yl group, benzoyl group (provided that the alkyl group has 1 to 6 carbon atoms)
Group, phenyl group, -OR⁸ , -SR⁹ Or -N (R
^Ten) (R¹¹) May be substituted with one or more of ), Carbon number
2 to 12 alkoxycarbonyl groups (however, alkoxy
When the number of carbon atoms in the alkoxy group is 2 to 11, the alkoxy group is mainly
Has one or more oxygen atoms between chain carbon atoms, and
/ Or may be substituted with one or more hydroxyl groups. ), F
Enoxycarbonyl group (provided that the alkyl group has 1 to 6 carbon atoms)
Group, phenyl group, halogen atom, -OR⁸ Or-N
(R^Ten) (R¹¹) May be substituted with one or more of ),
Ano group, nitro group, -CON (R^Ten) (R ¹¹), Carbon number 1
~ 4 haloalkyl group, -S (O) m-R¹²(However, R¹²
Represents an alkyl group having 1 to 6 carbon atoms, m is 1 or 2
is there. ), -S (O) m-R¹³(However, R¹³Has 6 to 6 carbon atoms
12 represents an aryl group, an alkyl group having 1 to 12 carbon atoms
And m is 1 or 2. ),carbon
C1-C6 alkoxysulfonyl group, C6-C10
Aryloxysulfonyl group or diphenylphosphine
Represents a noyl group; R² Is alkanoyl having 2 to 12 carbon atoms
Group (provided that at least one halogen atom or cyano group
It may be replaced. ), The double bond is a carbonyl group
Unconjugated alkenoyl group having 4 to 6 carbon atoms, benzo
Yl group (provided that the alkyl group having 1 to 6 carbon atoms, halogen atom)
Child, cyano group, -OR⁸ , -SR⁹ Or-N
(R^Ten) (R¹¹) May be substituted with one or more of
Yes. ), An alkoxycarbonyl group having 2 to 6 carbon atoms,
Is a phenoxycarbonyl group (provided that it has 1 to 6 carbon atoms.
Even if it is substituted with one or more of a kill group or halogen atom
Good. ) Is shown; R³ , R^Four , R^Five , R⁶ And R⁷ Is
Hydrogen atom, halogen atom, carbon number 1 to 12 independently of each other
Alkyl group, cyclopentyl group, cyclohexyl group,
Or a phenyl group (however, -OR⁸ , -SR⁹ Or
-N (R^Ten) (R¹¹) May be substituted with one or more of
Yes. ), Benzyl group, benzoyl group, having 2 to 12 carbon atoms
Alkanoyl group, C2-C12 alkoxycarbonyl
Group (provided that the alkoxy group has 2 to 11 carbon atoms)
In this case, the alkoxyl group has at least one acid between main chain carbon atoms.
With elementary atoms and / or with one or more hydroxyl groups
It may be replaced. ), A phenoxycarbonyl group, -O
R⁸(However, R⁸ Is in or to the phenyl ring
5-membered ring or 6 with one of the carbon atoms in the substituent
-A member ring may be formed. ), -SR⁹(However, R⁹ Is
Carbon atoms in the phenyl ring or in substituents on the phenyl ring
Forming a 5-membered or 6-membered ring with one of the children
Good. ), -S (O) R⁹(However, R⁹ Is in the phenyl ring
And one of the carbon atoms in the substituent on the phenyl ring
Together, they may form a 5-membered ring or a 6-membered ring.
Yes. ), -SO₂ R⁹(However, R⁹ Is in the phenyl ring
Together with one of the carbon atoms in the substituent to the phenyl ring,
A 5-membered ring or a 6-membered ring may be formed. ),Also
Is -N (R^Ten) (R¹¹) (However, R^TenAnd / or R¹¹
Is the carbon in the phenyl ring or in the substituent to the phenyl ring
Form a 5- or 6-membered ring with one of the elementary atoms
You may. ) And R³ , R^Four , R^Five , R⁶ Oh
And R⁷ At least one of -OR⁸ , -SR⁹ Or
-N (R^Ten) (R¹¹) Is; R⁸ Is hydrogen atom, carbon number 1
~ 12 alkyl group, substituted C2-6 alkyl
Group (provided that the substituent is a hydroxyl group, a mercapto group, a cyano group)
Group, an alkoxyl group having 1 to 4 carbon atoms, an alkoxy group having 3 to 6 carbon atoms
Lucenyloxy group, 2-cyanoethoxy group, carbon number 4 to
2- (alkoxycarbonyl) ethoxy group of 7, carbon number
2-5 alkylcarbonyloxy groups, phenylcarbo
Nyloxy group, carboxyl group or C2-C5
Consists of one or more alkoxycarbonyl groups. }, The main chain
2 to 6 carbon atoms having one or more oxygen atoms between carbon atoms
Alkyl group, alkanoyl group having 2 to 8 carbon atoms,-(C
H₂ CH₂ O) nH (where n is an integer of 1 to 20)
It ), An alkenyl group having 3 to 12 carbon atoms, and 3 to 6 carbon atoms
Alkenoyl group, cyclohexyl group, phenyl group of
However, it may be a halogen atom or an alkyl group having 1 to 12 carbon atoms.
May be substituted with an alkoxyl group having 1 to 4 carbon atoms
Yes. ), A phenylalkyl group having 7 to 9 carbon atoms, -Si
(R¹⁴) R (R¹⁵)₃-r (however, R¹⁴Is a carbon number of 1 to 8
R is a group, R¹⁵Represents a phenyl group, and r is 1 to 3
Is an integer. ) Is shown; R⁹ Is hydrogen atom, carbon number 1 to
12 alkyl groups, C 3-12 alkenyl groups,
Chlohexyl group, substituted alkyl group having 2 to 6 carbon atoms
{However, the substituent is a hydroxyl group, a mercapto group, a cyano group,
Alkoxyl group having 1 to 4 carbon atoms, alkene having 3 to 6 carbon atoms
Nyloxy group, 2-cyanoethoxy group, having 4 to 7 carbon atoms
2- (alkoxycarbonyl) ethoxy group, carbon number 2
5 alkylcarbonyloxy group, phenylcarbonyl
An oxy group, a carboxyl group or an alkane having 2 to 5 carbon atoms
Consists of one or more coxycarbonyl groups. }, Main chain carbon
Having one or more oxygen or sulfur atoms between atoms
C2-C12 alkyl group, phenyl group (however, halo
Gen atom, alkyl group having 1 to 12 carbon atoms or carbon number
It may be substituted with 1 to 4 alkoxyl groups. ),carbon
Represents a phenylalkyl group of the numbers 7 to 9; R^TenAnd R¹¹
Are each independently a hydrogen atom or an alkyl group having 1 to 12 carbon atoms.
Group, a C2-C4 hydroxyalkyl group, a C2-C2
10 alkoxyalkyl groups, alkene having 3 to 5 carbon atoms
Group, C5-12 cycloalkyl group, C7-
9 phenylalkyl group, phenyl group (however, carbon number 1
~ 12 alkyl group or C1-4 alkoxy
It may be substituted with one or more of the radicals. ), Carbon number 2-3
Alkanoyl group, alkenoyl group having 3 to 6 carbon atoms,
A benzoyl group or R^TenAnd R¹¹Together
And an alkylene group having 2 to 6 carbon atoms (however, between main chain carbon atoms
More than one oxygen atom or -NR⁸ Have-or
And / or hydroxyl group, alkoxyl having 1 to 4 carbon atoms
Group, alkanoyloxy group having 2 to 4 carbon atoms or benzene
It may be substituted with one or more of the zoyloxy groups. )
You ] A feeling of having a photoradical polymerization initiator represented by
Photogenic composition. 2. The radical photopolymerization initiator (B) is represented by the following formula (2): The photosensitive composition according to claim 1, which is represented by: 3. A photosensitive composition in which the component (A) is a polyimide precursor having an addition polymerizable group. 4. A method for producing a pattern, which comprises irradiating an active ray on the coating film of the photosensitive composition according to any one of claims 1, 2 and 3 and developing and removing an unirradiated portion. . 5. An electronic component having a layer of a pattern obtained by the method for producing a pattern according to claim 4. 6. The electronic component according to claim 5, wherein the electronic component is a semiconductor device and the pattern layer is a surface protective film or an interlayer insulating film.