JP2003342015A - Apparatus for producing deposition plate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a deposition plate with high productivity by enabling a deposition substrate surface to be always kept clean without taking a substrate out of the apparatus. <P>SOLUTION: The apparatus produces a deposition plate by melting a melting object in a sealed treating chamber, solidifying and growing the melting object on the substrate surface 14a of the substrate 14, and peeling the resultant deposition plate from the substrate surface 14a. A polishing machine main body 90 to polish the substrate surface 14a of the deposition substrate 14 is placed in the treating chamber. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sheet-shaped precipitation plate by using a melted object as a melt in a processing environment different from the external environment and solidifying and growing the melted object on the substrate surface of a precipitation substrate. The present invention relates to a deposition plate manufacturing apparatus for manufacturing.

[0002]

2. Description of the Related Art As a device for producing a sheet-like deposition plate by crystallizing a molten material, there is a semiconductor substrate manufacturing device for crystallizing a semiconductor material on a substrate surface of a carbon substrate. For example, Japanese Patent Laid-Open No. 6-191820 discloses a vacuum tank that forms a processing chamber, a melting furnace device that heats a semiconductor material while heating it into a molten metal, and a substrate surface of a carbon substrate can be immersed in the molten metal. A semiconductor substrate manufacturing apparatus including a deposition mechanism for moving up and down is disclosed.

When a semiconductor substrate is manufactured using the above apparatus, the inside of the vacuum tank is depressurized to an inert gas atmosphere, and then the semiconductor material is heated and melted. Then, when the entire semiconductor material becomes a molten melt, the carbon substrate is lowered by the deposition mechanism and immersed in the molten metal to deposit a sheet-shaped deposition plate made of the semiconductor material on the substrate surface. After that, the carbon substrate is lifted and pulled out of the molten metal, and when a predetermined height position is reached, the deposition plate is removed from the carbon substrate and then carried out to the outside of the vacuum tank to perform a series of deposition processes. Then, by repeating such a deposition process using a carbon substrate, it is possible to manufacture a large number of deposition plates on a single carbon substrate in single-wafer units.

[0004]

However, when the deposition process is repeated on the same substrate for deposition as in the conventional case, the initial shape (generally a smooth plate) is generated due to the erosion of the substrate surface and the adhesion of the solidified matter. It may deviate. And
When this deviation becomes large due to the repetition of the deposition treatment, a part of the deposition plate may remain as an adhered substance on the substrate surface of the deposition substrate. Then, when the deposit grows by repeating the precipitation treatment, the uniformity of the thickness distribution of the deposit plate deteriorates to a degree that cannot be ignored. As a result, conventionally, for example, when a predetermined number of wafers are manufactured, the processing chamber in the vacuum tank is returned from the inert gas atmosphere to the atmosphere of the external environment, the deposition substrate is taken out of the apparatus, and the substrate surface is cleaned. As a result, it is necessary to perform the work of exchanging with a new substrate for deposition, and as a result, there is a problem that productivity is lowered due to time loss required for cleaning, exchange, change of atmosphere and the like.

Therefore, the present invention has been made in view of the above problems, and it is possible to always maintain the substrate surface of the deposition substrate in a clean state without taking out the deposition substrate from the outside of the apparatus and to achieve high production. It is an object of the present invention to provide a deposition plate manufacturing apparatus capable of obtaining good properties.

[0006]

According to a first aspect of the present invention, there is provided a deposition plate manufacturing apparatus, wherein a melted object is a melted object in a closed processing chamber, and the melted object is a melted object. Is a deposition plate manufacturing apparatus for producing a sheet-shaped deposition plate by solidifying and growing on the substrate surface of the deposition substrate, and a polishing device for polishing the substrate surface of the deposition substrate. It is characterized by being equipped in the processing chamber.

According to the above structure, since the substrate surface of the deposition substrate can be polished by the polishing device provided in the processing chamber, the deposition substrate can be removed without taking it out of the processing chamber. Can be reused. As a result, since the processing chamber can be always maintained in a constant atmosphere, it becomes possible to continuously operate the deposition plate manufacturing apparatus for a long period of time, so that extremely high productivity can be obtained. .

According to a second aspect of the present invention, there is provided the deposition plate manufacturing apparatus according to the first aspect, wherein the polishing apparatus stretches the polishing belt with which the substrate surface of the deposition substrate is in planar contact. The driving roller and the driven roller, and a roller driving motor that is connected to one end of the driving roller and drives the polishing belt to rotate.

According to the above construction, the polishing apparatus can be constructed easily and with a small number of parts.

According to a third aspect of the present invention, in the apparatus for producing a deposition plate according to the first aspect, the polishing apparatus includes a polishing machine main body having a polishing disk with which the substrate surface of the deposition substrate is in planar contact. It is characterized by comprising a polisher main body elevator for raising and lowering the polisher main body with respect to the substrate surface of the deposition substrate, and an installation stand for supporting the polisher main body elevator.

According to the above structure, if the deposition substrate is held at a predetermined height position, the polishing disk can be raised to this height position for polishing, so that the deposition substrate is moved. It is possible to prevent the mechanism for making it complicated.

[0012]

DETAILED DESCRIPTION OF THE INVENTION An embodiment of the present invention will be described below with reference to FIGS. The semiconductor substrate manufacturing apparatus 1 according to the present embodiment, as shown in FIG. 2, manufactures a sheet-shaped semiconductor substrate 2 containing Si as a main component. The semiconductor substrate manufacturing apparatus 1 is a kind of deposition plate manufacturing apparatus,
The deposition plate manufacturing apparatus heats and melts an object to be melted, such as a semiconductor material or a metal material, into a molten metal in a closed processing chamber,
This means an apparatus for producing the object to be melted into a sheet-shaped deposition plate. Examples of the object to be melted include semiconductor materials such as Si and metal materials such as iron and titanium.

The above-mentioned semiconductor substrate manufacturing apparatus 1 is equipped with a double-walled vacuum container 3 capable of isolating the inside from the outside environment in a hermetically sealed state. The vacuum container 3 is provided with a cylindrical upper tank part 4 that forms an upper storage chamber 6, and a lower tank part that is provided below the upper tank part 4 and that forms a lower storage chamber 7 that communicates with the upper storage chamber 6. 5 and 5. Upper tank part 4
First to fourth peep window portions 8a to 8d are formed in the width direction in the central portion of the upper surface of the peep window portions 8a to 8d.
The upper storage chamber 6 and the lower storage chamber 7 to the upper tank portion 4
It is visible over the entire width direction. Also, FIG.
As shown in FIG. 5, a fifth viewing window 8e is formed at one end of the upper tank portion 4. The fifth peep window portion 8e allows the upper accommodation chamber 6 and the lower accommodation chamber 7 to be visible over the entire longitudinal direction of the upper tank portion 4.

As shown in FIG. 2, a carrying-in / carrying-out section 5a is opened in one side wall of the lower tank section 5. The loading / unloading part 5a can be opened / closed by an opening / closing door 9 which moves back and forth in the longitudinal direction of the upper tank part 4 (direction perpendicular to the paper surface). A gas supply device (not shown) that supplies an inert gas such as Ar gas and a vacuum exhaust device (not shown) that exhausts the air in both storage chambers 6 and 7 are connected to the vacuum container 3 configured as described above. There is. These devices supply an inert gas while depressurizing both storage chambers 6 and 7 of the vacuum container 3 to a predetermined pressure so that a processing environment different from the external environment appears in both storage chambers 6 and 7. It has become.

A deposition mechanism 10 for immersing the deposition substrate 14 in the molten metal 15 and pulling it up is provided at approximately the center of both the storage chambers 6 and 7. The deposition mechanism 10 includes a horizontal movement mechanism 13, a vertical movement mechanism 11 horizontally movable by the horizontal movement mechanism 13, and a swivel mechanism 12 vertically movable by the vertical movement mechanism 11. The horizontal movement mechanism 13 has a horizontal transport unit 16 that is arranged in the horizontal direction and has a movable range set to both ends of the upper storage chamber 6, and a horizontal drive unit 17 provided at one end of the horizontal transport unit 16. is doing.

As shown in FIG. 3, the horizontal transfer section 16 includes a screw shaft member 18 having a thread groove formed on the entire peripheral surface thereof, a block member 19 screwed into the screw shaft member 18, and a block member 19. Rail member 20 that supports the lower surface to move back and forth
And a connecting member 21 provided on the upper surface of the block member 19 and connected to the vertical movement mechanism 11. Also,
The horizontal transport unit 16 includes a cover member 22 provided so as to cover the upper surfaces of these members 18 to 19.
The cover member 22 prevents dust that is scattered from the molten metal 15 or the like and floats from being stacked on the members 18 to 19.

At one end of the horizontal transfer section 16 is shown in FIG.
As shown in, the horizontal drive unit 17 is connected. The horizontal drive unit 17 includes a horizontal drive device 23 such as a servo motor capable of rotating in the normal and reverse directions at an arbitrary rotational speed and capable of stopping with a predetermined holding force, and a first cooling device 24 for cooling the horizontal drive device 23. Have The horizontal drive device 23 is connected to one end of the screw shaft member 18, and by rotating the screw shaft member 18 in the forward and reverse directions, the vertical movement mechanism 11 is moved to an arbitrary position in the horizontal direction via the block member 19 and the like. It is movable.

On the other hand, the vertical moving mechanism 11 has a vertical transport unit 30 arranged in the vertical direction, and a vertical drive unit 31 provided at the upper end of the vertical transport unit 30. As shown in FIG. 3, the vertical transport unit 30 is composed of substantially the same structural members as the horizontal movement mechanism 13 described above, and has a screw shaft member 32 having a thread groove formed on the entire peripheral surface, and a screw shaft member 32. It has a block member 33 which is screwed to the upper surface (right surface in the drawing) and the turning mechanism 12 is connected to the block member 33, and a rail member 34 which supports the lower surface (right surface in the drawing) of the block member 33 so as to be able to move up and down.

A vertical drive unit 31 is connected to the upper end of the vertical transport unit 30. The vertical drive unit 31 includes a vertical drive device 35, such as a servo motor, which can rotate forward and backward at an arbitrary rotation speed and can be stopped by a predetermined holding force, and a second cooling device 36 which cools the vertical drive device 35. Have The vertical drive device 35 is connected to the upper end portion of the screw shaft member 32, and by rotating the screw shaft member 32 in the forward and reverse directions, the swivel mechanism 12 is vertically moved to an arbitrary height position via the block member 33 and the like. You can move to.

The swivel mechanism 12 which is moved up and down by the vertical movement mechanism 11 has a connecting support 38 whose one end face is connected to the block member 33, and a rotary drive unit 39 which is connected to the other end face of the connecting support 38. And have. The rotation drive unit 39 is capable of rotating in the normal and reverse directions at an arbitrary rotation speed and can be stopped by a predetermined holding force, such as a rotation drive device 40 such as a servo motor, and a third cooling device for cooling the rotation drive device 40. 41 and 41.

Rotational drive device 40 in the third cooling device 41
Has a tip end portion of the rotating shaft 40a arranged in the connection support body 38. An upper end portion of a first vertical member 42a vertically arranged is fixed to a tip end portion of the rotating shaft 40a.
The first vertical member 42a is connected to the upper end of the second vertical member 42c via the horizontal member 42b. Further, the lower ends of the first and second vertical members 42a and 42b are connected to both ends of the deposition substrate 14 in the turning direction. The first and second vertical members 42a and 42c and the horizontal member 42b constitute a swivel support mechanism 42, and the swivel support mechanism 42 swivels the deposition substrate 14 around the rotary shaft 40a. It is designed to let you.

The above-mentioned first and second vertical members 42a.4.
2c is formed of a metal material such as stainless steel having excellent mechanical strength in the range from the rotating shaft 40a side to the middle part, while the range from the middle part to the lower end connected to the deposition substrate 14 is heat resistant. It is made of carbon with excellent properties. As a result, the swivel support mechanism 42 causes the deposition substrate 14 to
When swirling and immersing in molten metal 15 at high temperature,
Even if the lower part receives a large amount of radiant heat from No. 5, it is possible to maintain the initial mechanical strength for a long period of time.

The depositing mechanism 10 composed of the respective mechanisms 11 to 13 as described above moves the vertical moving mechanism 11 and the swiveling mechanism 12 forward and backward by the horizontal moving mechanism 13 so as to move together with these mechanisms 11 and 12. The deposition substrate 14 can be positioned at a preheating position A, a deposition position B, a peeling position C and a polishing position D. At the deposition position B, the mechanisms 11 to 13 are operated while interlocking with each other, so that the deposition substrate 14 advances along a deposition locus having a radius of the swirl center O closer to the molten metal 15 side than the rotating shaft 40a. Has become. The precipitation locus is obtained by descending the deposition substrate 14 obliquely from the upstream side in the swirling direction (advancing direction) and immersing it in the molten metal 15, and then raising it obliquely to the downstream side in the advancing direction from the molten metal 15. It is set so that the semiconductor substrate 2, which is a precipitate obtained by solidification growth of the molten metal 15, is generated in the immersed portion by pulling up.

The polishing mechanism 86 is arranged diagonally below the polishing position D described above. The polishing mechanism 86 includes a storage box 89 whose upper edge portion is partially opened to allow the deposition substrate 14 to enter, and a polishing machine main body 90 provided in the storage box 89. The polishing machine body 90 is shown in FIG.
As shown in FIG. 3, the polishing belt 91 with which the substrate surface 14 a of the deposition substrate 14 is in planar contact, the driving roller 92 and the driven roller 93 on which the polishing belt 91 is stretched, and one end of the driving roller 92 are connected. The roller drive motor 94 that rotationally drives the polishing belt 91, the fourth cooling device 95 that cools the roller drive motor 94, and the polishing support base 96 that supports these members are provided. Then, the polishing machine main body 90 configured in this manner removes the adhered substances adhering to the substrate surface 14a by rotating the polishing belt 91 while planarly contacting the substrate surface 14a of the deposition substrate 14. It is like this.

The deposition substrate 14 is made of carbon as shown in FIGS. 4 and 5.
The deposition substrate 14 has a substrate surface 14a composed of a lower surface on which the semiconductor substrate 2 is deposited, inclined portions 14b formed on each of the upstream and downstream side surfaces in the traveling direction, and the upper surface (anti-deposition) of the deposition substrate 14. And a grip portion 14c formed on the surface). The inclined portion 14b is inclined from the substrate surface 14a to the upper surface side such that both end portions of the substrate surface 14a are located inside both end portions of the upper surface. Specifically, in FIG.
The inclined portion 14b is set so that the inclination angle θ ₂ with respect to the substrate surface 14a is larger than the dipping angle θ _{1 with} respect to the molten metal 15, and the end portion of the semiconductor substrate 2 is arranged in the traveling direction more than the both end portions of the upper surface. It is designed to be located inside.

The gripping portion 14c formed on the upper surface of the deposition substrate 14 has an inverted trapezoidal cross section,
It constitutes a part of the carbon substrate gripping device 43. The carbon substrate gripping device 43 includes a chuck mechanism 44 that detachably holds the gripping portion 14c. Chuck mechanism 4
4 includes chuck members 45, 45 symmetrically. Each of the chuck members 45, 45 has an engaging portion 45a formed on the lower surface so as to engage with the grip portion 14c, and an annular groove portion 45b formed along the four sides of the upper surface so as to receive a fallen object such as dust. , A suspension portion 45c surrounded by the annular groove portion 45b.

Two projecting portions 45d, 45d are arranged opposite to each other on the upper surface of the suspension portion 45c. Both protruding parts 4
Pin insertion holes 45e and 45e are provided in the central portions of 5d and 45d.
Are formed. As shown in FIG. 5, the vertical members 42a and 42b of the swivel support mechanism 42 are fitted between the protruding portions 45d and 45d.
A carbon pin member 46 is detachably inserted into the pin insertion holes 45e and 45e, and the pin member 46 attaches the vertical members 42a and 42b to the chuck mechanism 44. It is designed to be connected.

The pin member 46 is formed to be shorter than the projected area of the chuck member 45 on the deposition side so as to avoid direct radiation of radiant heat from the molten metal 15. Further, as shown in FIG. S6, the hardened layer 100 is formed on the surface of the pin member 46, and the hardened layer 100 increases the mechanical strength of the surface of the pin member 46, so that the chuck member 45 has Wear at the time of attaching / detaching to / from the pin insertion hole 45e is reduced. On the other hand, the chuck member 4
5, the pin insertion hole 45 that contacts the pin member 46
The hardened layer 100 is formed on e, the engaging portion 45a that contacts the deposition substrate 14, and the lower surface. The chuck member 45 has a hardened layer 100 having an increased mechanical strength on the contact surface, so that abrasion when the pin member 46 is attached and detached and the deposition substrate 14 is gripped is reduced.

As a method of forming the hardened layer 100, a hardening treatment of coating the SiC film by a surface treatment method such as plasma CVD or ion plating can be mentioned. The hardened layer 100 may be formed on the entire surface of the chuck member 45. In this case, since the mechanical strength of the entire chuck member 45 can be increased, the operator carries the chuck member 45. It is possible to make it hard to be damaged even if a shock is given.

On the other hand, in the first cooling device 24, as shown in FIG. 8, the horizontal drive device 23 is housed so as to be isolated from the processing environment of the lower housing chamber 7, and the vacuum container 3 is housed. A gas supply pipe 26 for supplying a cooling gas from the outside to one end side of the storage container 25 and a gas discharge pipe 27 for discharging the cooling gas from the other end side of the storage container 25 to the outside of the vacuum container 3 are provided. There is. A gas supplier 28 is connected to the gas supply pipe 26, and the gas supplier 28 forcibly supplies the cooling gas into the storage container 25 so that the ambient temperature of the horizontal drive device 23 is equal to or lower than a predetermined temperature. To maintain.
The cooling gas may be an inert gas such as Ar gas or nitrogen gas, or may be air. Further, instead of the gas supplier 28, a gas cylinder containing a high-pressure cooling gas may be used. In addition, the second cooling device 3 described above
6, the third cooling device 41 and the fourth cooling device 95 are configured to exhibit the same cooling function by the same members as the above-described first cooling device 24 having the storage container 25 and the like in FIG. .

The molten metal 15 into which the deposition substrate 14 held by the carbon substrate gripping device 43 is dipped is contained in a crucible device 51 as shown in FIG. The crucible device 51 supports a crucible 52 having a storage portion 52 a for storing the molten metal 15, an induction heating coil 53 arranged around a side wall 52 b of the crucible 52, and the crucible 52 and the induction heating coil 53. It has a crucible support 54. A power cable 55 having a heat-resistant structure shown in FIG. 2 is detachably connected to the induction heating coil 53, and high-frequency AC power is supplied from a high-frequency power source (not shown). As a result, the induction heating coil 53 is
It is possible to generate an alternating magnetic field around the crucible 52 and mainly inductively heat the surface side of the crucible 52.

On the other hand, the crucible 52 is formed in a rectangular shape in plan view so that the advancing direction of the deposition substrate 14 becomes long, and the side wall 52b is formed while suppressing the contained amount of the molten metal 15 to the minimum. It is arranged so as not to obstruct the turning of the deposition substrate 14. The crucible 52 may have any shape as long as the advancing direction of the deposition substrate 14 is elongated, and may be, for example, an elliptical shape in plan view. Further, in the crucible 52, as shown in FIG. 10, the thickness of the bottom wall 52c is substantially equal to the average crucible radius so that a large amount of heat is transferred from the side surface side and the bottom surface side of the housing portion 52a. Moreover, it is set to be equal to or more than the thickness of the side wall 52b.

Here, the average crucible radius is the crucible 52.
Is the average of the radii in all directions. Further, it is desirable that the side wall 52b of the crucible 52 be set to a thickness less than the penetration depth of electromagnetic induction. In this case, since the molten metal 15 can be convected, falling objects such as dust are cores. Therefore, it becomes possible to prevent the phenomenon that the center of the surface of the molten metal 15 is solidified.

In the accommodating portion 52a of the crucible 52,
As shown in FIG. 9, a carbon melt level detector 61 used for monitoring the melt level of the melt 15 is formed. The molten metal height detection unit 61 has a plurality of stepped portions 61a in a stepwise manner from the bottom surface to the upper surface of the storage portion 52a. The molten metal height detection unit 61 is arranged at the corner of the storage unit 52a so as not to become an obstacle to the deposition substrate 14. The molten metal height detection unit 61 may be formed integrally with the crucible 52, or may be formed separately from the crucible 52.

Further, in the accommodating portion 52a of the crucible 52, the longitudinal direction of the crucible 52 (the traveling direction of the semiconductor substrate 2).
A partition wall 62 is provided along the partition wall. Partition wall 62
Are arranged so as not to obstruct the deposition substrate 14. Further, the partition wall 62 is formed so that the upper end portion is located on the upper surface of the crucible 52 and the lower end portion is located above the bottom surface of the accommodating portion 52a. As a result, the partition wall 62
Is a first melting tank 63 in which the deposition substrate 14 is immersed,
The second melting tank 64 communicating with the melting tank 63 and the housing portion 52a.
Are divided, and the propagation of disorder of the molten metal surface between the second melting tank 64 and the first melting tank 63 is prevented.

The crucible 52 configured as described above is supported by the crucible support base 54. Crucible support 5
As shown in FIG. 2, reference numeral 4 denotes an adiabatic support 54a that independently supports the crucible 52 and the induction heating coil 53.
And a cooling board 54b joined to the lower surface of the heat insulating support 54a and having a cooling pipe embedded therein, and a carrier table 54c for supporting the cooling board 54b. The crucible support base 54 is mounted on the crucible loading / unloading mechanism 57. Crucible loading / unloading mechanism 5
7 is laid inside and outside the vacuum container 3 with the loading / unloading part 5a of the vacuum container 3 interposed therebetween, and is provided with a plurality of transport rollers 56 rotatably. The crucible loading / unloading mechanism 57
By rotating the transport roller 56 in the forward and reverse directions, the crucible device 51 including the crucible support 54 and the crucible 52 can be carried in and out of the vacuum container 3.

Above the crucible device 51, as shown in FIG. 3, there is provided a supply mechanism 71 for supplying the dissolution object 101 to the second dissolution tank 64. The supply mechanism 71 is
Injecting part is formed at the tip, and powdery or lumpy melt target 1
The storage box 72 stores 01, a storage box moving mechanism 73 that moves the storage box 72 forward and backward in the horizontal direction, and an extrusion mechanism 74 that pushes out the melting target object 101 in the storage box 72 from the tip.

Further, as shown in FIG. 2, the molten metal height detecting unit 61 and the molten metal 15 are imaged on the first observation window 8a of the vacuum container 3 above the crucible device 51, and an image pickup signal is output. An image pickup device 75 is provided. Imaging device 75
Is a camera body 76 such as a CCD camera, and a camera body 7.
6 and a slit plate 77 arranged in front of the slit 6.
The slit plate 77 is formed with a slit that limits the imaging area of the camera body 76 to the periphery of the molten metal height detection unit 61.

The image pickup device 75 and the supply mechanism 71 described above.
Is connected to a control device (not shown). The control device includes an arithmetic unit, a storage unit, an input / output unit, and the like, and has various functions for controlling each mechanism of the semiconductor substrate manufacturing apparatus 1 individually and in conjunction with each other. Specifically, the function of detecting the molten metal level of the molten metal 15 based on the brightness of the imaging signal in each step 61a of the molten metal level detection unit 61, and the detected molten metal height is a predetermined reference height. Supply mechanism 7
1 supply timing of the dissolution object 101 and /
Alternatively, it has a function of controlling the supply amount.

A first heat shield 78 is provided between the crucible device 51 and the deposition mechanism 10 to block radiant heat from the molten metal 15 toward the deposition mechanism 10. First heat shield 7
Reference numeral 8 denotes a heat shield plate 78a made of copper, and a cooling pipe 78b joined to the upper surface of the heat shield plate 78a for cooling the heat shield plate 78a.
It has and. The heat shield plate 78a includes a swing support mechanism 4
An opening portion through which 2 is inserted and a window portion that enables the imaging device 75 to capture an image of the molten metal surface height detection unit 61 are formed. As a result, the first heat shield 78 reduces direct radiation of radiant heat to the deposition mechanism 10 as much as possible, thereby preventing overheating of the deposition mechanism 10. further,
A second heat shield 79 is provided between the crucible device 51 and the first heat shield 78 so as to prevent direct radiation of radiant heat to the swivel support mechanism 42.

A preheating mechanism 81 is provided on the upstream side in the traveling direction of the deposition substrate 14 when viewed from the crucible device 51. The preheating mechanism 81 is arranged below the preheating position A, a power cable 83 that is detachably connected to the preheating heater 82, and is disposed outside the vacuum container 3, and preheats via the power cable 83. And a preheating power supply device (not shown) for supplying electric power for use. Then, the preheating mechanism 81 causes the preheating heater 82 to dispose of the deposition substrate 1.
4 are opposed to each other, the deposition substrate 14 is heated to a predetermined temperature, so that the molten metal 15 and the deposition substrate 14 are heated.
The temperature difference between and is constant.

On the other hand, as seen from the crucible device 51, a peeling mechanism 85 is provided on the downstream side in the traveling direction of the deposition substrate 14.
The polishing mechanism 86 described above is arranged in this order. The peeling mechanism 85 is disposed below the peeling position C, and has a peeling member 87 that enters between the deposition substrate 14 and the semiconductor substrate 2, and the semiconductor substrate 2 that has been peeled off by the peeling member 87 and dropped. And a substrate mounting table 88 for receiving the substrate.

The operation of the semiconductor substrate manufacturing apparatus 1 having the above structure will be described.

(Preparation / Maintenance Step) The preparation / maintenance step is performed when the semiconductor substrate manufacturing apparatus 1 is brought into a state suitable for production before and after the production of the semiconductor substrate 2 is started. That is, as shown in FIG. 2, when the crucible device 51 is inspected, the crucible 52 is replaced, and each mechanism in the vacuum container 3 is inspected, first, the opening / closing door 9 is moved to carry in the vacuum container 3. The projecting portion 5a is opened. Then, after the power cable 55 is separated from the crucible device 51, the transport rollers 56 of the crucible loading / unloading mechanism 57 are rotated, so that the crucible device 51 is unloaded through the loading / unloading part 5a. After this, at an inspection workshop (not shown),
If the crucible device 51 is inspected and there is a problem,
The relevant part is repaired or replaced.

Further, during the inspection of the crucible device 51, as shown in FIG. 3, the remaining amount of the melting object 101 accommodated in the accommodation box 72 of the supply mechanism 71 is confirmed and replenished so as to be an appropriate amount. To be done. Further, the operator visually inspects the inside of the vacuum container 3 and repairs or replaces parts as necessary.

For example, when the deposition substrate 14 attached to the carbon substrate gripping device 43 has a problem, the pin member 46 has a pin insertion hole 45 as shown in FIGS. 5 and 6.
By being removed from e, the first and second vertical members 42a and 42c of the swivel support mechanism 42 are protruded from the protruding portions 45d and 45d.
It is separated from 45d. Thereby, the vertical member 42a
By 42c, the chuck members 45, 45 fixed to the upper surface of the deposition substrate 14 in the left-right direction become free. Then, the chucking members 45 are moved so as to be separated in the left-right direction, so that the deposition substrate 14 is removed from the carbon substrate gripping device 43.

Next, a new deposition substrate 14 is prepared,
The chuck members 45, 45 are set so as to sandwich the gripping portion 14c of the deposition substrate 14. Thereafter, the first and second vertical members 42a and 42c of the swivel support mechanism 42 are inserted between the protruding portions 45d and 45d, and the pin member 46 is inserted into the pin insertion hole 45e. As a result, the chuck members 45, 45 are fixed in the left-right direction, and the engaging portions 45a, 4
The deposition substrate 14 is attached to the carbon substrate gripping device 43 by gripping the gripping portion 14c by 5a.

Here, when the deposition substrate 14 is attached to or detached from the carbon substrate gripping device 43, the pin insertion holes 45e of the chuck member 45 and the pin member 46 are rubbed with each other or the chuck member 45 is engaged. Part 45a and deposition substrate 14
As a result of rubbing against each other, it becomes easy to wear. However, the hardened layer 100 enhances the mechanical strength of the rubbing portions of the pin member 46 and the carbon substrate gripping device 43. Therefore, even when the deposition substrate 14 is repeatedly attached and detached, the pin member 46 and the carbon substrate gripping device 43 maintain the initial shape, so that the pin member 46 is maintained.
Also, the carbon substrate gripping device 43 can be used for a long period of time. Further, even when a part of the pin member 46 or the like is damaged and missing when the deposition substrate 14 is attached or detached, since the fallen object is received by the annular groove 45b, the molten metal 15 in FIG. As never fall.

Next, when the inspection and replacement of each device are completed as described above, as shown in FIG. 2, the loading / unloading part 5a is closed by the opening / closing door 9, and the upper storage chamber 6 in the vacuum container 3 is closed. And the lower accommodation chamber 7 is sealed from the inside. Then, a vacuum exhaust device (not shown) is operated to exhaust air, and then an inert gas such as Ar gas is supplied, so that a processing environment different from the external environment is formed in the accommodation chambers 6 and 7.

Thereafter, the induction heating coil 53 is supplied with high-frequency AC power, and a high-frequency magnetic field is generated around the crucible 52. As a result, as shown in FIG.
By applying a strong magnetic field to the surface side of the side wall of No. 2, mainly the surface side of the side wall is heated by induction heating,
This amount of heat on the surface side is conducted inward. At this time, in the crucible 52, the thickness of the bottom wall 52c is set to be substantially equal to the average crucible radius and equal to or more than the thickness of the side wall 52b. As a result, the housing portion 5
A large amount of heat is transferred from the two sides of the side surface and the bottom surface of 2a, and the melting object 101 is uniformly heated by this amount of heat, and as a result, the whole melts into the molten metal 15 at an early stage. Further, after the molten metal 15 is formed, the side surface and the lower surface of the molten metal 15 are continuously heated with a large amount of heat, so that the entire molten metal 15 is maintained at a uniform temperature.

When the molten metal 15 is formed, the temperature of the storage chambers 6 and 7 in the vacuum container 3 becomes high and the molten metal 15 emits high-temperature radiant heat. And part of the radiant heat is
Deposition mechanism 1 will proceed in the direction of deposition mechanism 10.
Since the progress is blocked by the first heat shield 78 and the second heat shield 79 arranged before 0, the deposition mechanism 10 is hardly reached. Thereby, the deposition mechanism 10
Is prevented from thermal deterioration due to direct radiation of radiant heat.

Further, the accommodating chamber 6 in the vacuum container 3 which has been heated to a high temperature.
In FIG. 7, the drive devices 23, 35, 40 of the deposition mechanism 10 and the roller drive motors 94 of the polishing mechanism 86 are respectively accommodated in the cooling devices 24, 36, 41, 95 to be cooled. At this time, as shown in FIG. 8, the cooling medium used in the cooling devices 24, 36, 41, and 95 includes:
Cooling gas is used. Therefore, the gas supply pipe 26
Even when the cooling gas leaks to the storage chambers 6 and 7 due to damage to the gas discharge pipe 27, the storage container 25, or the like,
There is no possibility that the cooling water comes into contact with the molten metal 15 and causes a serious failure.

(Preheating Step) When the molten metal 15 is formed in the desired processing environment as described above and the preparation for production is completed, as shown in FIG. It is horizontally moved to the preheating position A by the horizontal movement mechanism 13. Then, the turning mechanism 12 is used for the deposition substrate 1
The deposition substrate 14 is opposed to the preheating heater 82 by being lowered by the vertical movement mechanism 11 while maintaining the posture in which 4 is suspended. After that, preheating power is supplied to the preheating heater 82, and the deposition substrate 14 is heated by the preheating heater 82 to a predetermined preheating temperature.

(Deposition Step) When the deposition substrate 14 reaches a predetermined preheating temperature, the vertical moving mechanism 11 is moved to the deposition position B. Then, the vertical moving mechanism 11, the turning mechanism 12, and the horizontal moving mechanism 13 are operated in association with each other, so that the precipitation substrate has a precipitation locus whose radius is the turning center O closer to the molten metal 15 side than the turning shaft 40a. 14 is turned. As a result, as shown in FIG. 7, the deposition substrate 14 is immersed in the molten metal 15, the molten metal 15 is deposited on the substrate surface 14a of the deposition substrate 14 to become the semiconductor substrate 2, and after a certain time has elapsed, the semiconductor substrate 2 Is pulled up from the molten metal 15,
The semiconductor substrate 2 having a predetermined thickness is formed.

(Peeling Step) When the semiconductor substrate 2 having a predetermined thickness is formed on the substrate surface 14a of the deposition substrate 14, the vertical moving mechanism 11 is moved to the peeling position C. Then, the swirling mechanism 12 swivels the deposition substrate 14 in the hanging member direction toward the peeling member 87, so that the peeling member 87 enters between the deposition substrate 14 and the semiconductor substrate 2. As a result, the semiconductor substrate 2 is forcibly peeled off from the deposition substrate 14 by the peeling member 87 and placed on the substrate platform 88, and after a predetermined number of semiconductor substrates 2 are obtained, they are collectively ejected from an outlet (not shown). Then, it is carried out of the machine.

(Mold Level Control Step) When a large number of semiconductor substrates 2 are produced by repeating the above-described deposition step, the molten metal 15 is reduced by the consumption amount according to the number of semiconductor substrates 2 produced. If the amount of the molten metal 15 is left as it is, the height of the molten metal is lowered, and as a result, the immersion depth of the deposition substrate 14 becomes shallow, and finally the deposition substrate 14 cannot be immersed in the molten metal 15. . Therefore, during the production of the semiconductor substrate 2, the image pickup device 75 takes an image of the molten metal height detection unit 61 in the crucible 52, and the melting target object 101 is supplied so that the molten metal surface becomes constant based on the image pickup signal. It

That is, the image pickup signal of each step 61a obtained by picking up the image of the molten metal surface level detector 61 is taken in by a control device (not shown), and the luminance signal component in the image pickup signal is extracted by this control device. It Then, the molten metal 15 and the molten metal surface height detection unit 61
The luminance signal component is binarized with a predetermined threshold value so as to be discriminated from each step portion 61a. Thereafter, the step 61a exposed from the molten metal 15 is obtained based on the binarized data, and when the predetermined step 61a is exposed, it is determined that the level of the molten metal 15 has fallen below the allowable range. To be done. Then, in this case, as shown in FIG. 3, a predetermined amount of the object 101 to be melted is extruded from the supply mechanism 71 and put into the crucible 52, and the melt level is restored to a predetermined level.

When the object 101 to be melted is put into the crucible 52 as described above, the molten metal surface oscillates, but with respect to the second melting tank 64 whose upper surface is divided by the partition wall 62. Since the object 101 to be dissolved is dropped, the swing does not propagate to the first dissolution tank 63 in which the deposition substrate 14 is immersed. Thereby, the production of the semiconductor substrate 2 can be continued even while the melted object 101 is being charged.

(Polishing Step) When the production of the semiconductor substrate 2 is repeated, deposits may remain on the substrate surface 14a of the deposition substrate 14. Therefore, in this case, the vertical moving mechanism 11 is moved to the polishing position D, and the deposition substrate 14 is positioned above the polishing mechanism 86. Then, the deposition substrate 14
Is lowered and the substrate surface 14a of the deposition substrate 14 is brought into contact with the polishing belt 91, whereby the polishing belt 91 is rotated. As a result, the deposits on the substrate surface 14a are forcibly scraped off, and the substrate surface 14a is restored to the initial state of production.

As described above, in the semiconductor substrate manufacturing apparatus (deposition plate manufacturing apparatus) 1 of this embodiment, the melting target object 101 is the molten metal 15 in the closed processing chamber 6.7, and the melting target object 101 is melted. Is a semiconductor substrate manufacturing apparatus 1 for manufacturing a sheet-shaped semiconductor substrate (deposition plate) 2 by solidifying and growing the substrate surface 14a of the deposition substrate 14 and then peeling it off from the substrate surface 14a. The processing chambers 6 and 7 are equipped with a polishing mechanism (polishing device) 86 for polishing the substrate surface 14a. As a result, the polishing mechanism 8 provided in the processing chambers 6 and 7
Since the substrate surface 14a of the deposition substrate 14 can be polished by 6, the deposition substrate 14 can be reused without taking the deposition substrate 14 out of the processing chambers 6 and 7. As a result, the processing chambers 6 and 7 can always be maintained in a constant atmosphere, so that the semiconductor substrate manufacturing apparatus 1 can be continuously operated for a long period of time.
It is possible to obtain extremely high productivity.

In this embodiment, the case where the polishing surface for polishing the substrate surface 14a of the polishing mechanism is fixed and the deposition substrate 14 is moved up and down and swung toward this polishing surface has been described. It is not limited to. That is, in the polishing apparatus, the polishing surface may be movable up and down.

Specifically, as shown in FIG. 11, a polishing machine main body 198 provided with a polishing disk 191 with which the substrate surface 14a of the deposition substrate 14 is in planar contact, and the polishing machine main body 1
Polishing machine main body elevator 199 that elevates and lowers 98 with respect to the substrate surface 14a of the deposition substrate 14, and the polishing machine main body elevator 19
The installation table 196 supporting 9 may be provided. The installation base 196 has a support base 196a that supports the polishing machine main body 198 so that it can be moved up and down, and a base 196b that projects from the lower end of the support base 196a to the front side.

On the other hand, the polishing machine main body 198 is equipped with a motor 192 connected to a power supply device (not shown). The motor 192 is set such that the axis of the rotary shaft 192a is in the vertical direction, and the tip of the rotary shaft 192a is connected to the center of the polishing disk 191. The polishing disk 191 is formed in a disk shape, and the polishing surface (upper surface) that contacts the deposition substrate 14 is formed of at least a material that can be polished.

Further, the polishing machine main body elevator 199 for raising and lowering the polishing machine main body 198 includes an elevator base 193 having an arm 193a, an elevator shaft 194 having a screw thread on the outer surface, a rod-shaped guide 195, and the above-mentioned installation base. 196 support base 1
It has bearing members 197a and 197b fixed to 96a. The above-mentioned motor 192 is fixed to the tip of the arm 193a so as to support the polishing machine body 198. On the other hand, the lifting table 193 located at the base of the arm 193a is formed with a screw hole having a thread groove through which the lifting shaft 194 penetrates and is screwed, and a through hole through which the guide 195 slidably penetrates. There is.

The lifting shaft 194 and the guide 195 described above.
Are arranged in parallel so that their axes are in the vertical direction.
The upper and lower ends of the elevating shaft 194 have bearing members 19
It is rotatably supported by 7a and 197b. On the other hand, the upper and lower ends of the guide 195 are fixed by bearing members 197a and 197b. Further, a rotation driving device (not shown) is connected to the lower end of the elevating shaft 194. This rotation driving device is provided with a motor such as a stepping motor capable of rotating in a normal direction and a reverse direction at an arbitrary rotation angle, and by rotating the elevating shaft 194 by a predetermined angle, the polishing machine main body via the elevating table 193. 198
Can be positioned at a predetermined height position. The driving device may detect the height position by a limit sensor instead of positioning the height position of the polishing machine main body 198 by the rotation angle. In this case, a general inexpensive motor can be used.

Polishing mechanism 190 configured as described above
Is attached such that the installation table 196 is joined to the wall surface of the lower tank 5. At that time, between the polishing mechanism 190 and the crucible apparatus 51, the molten metal 15 is separated from the deposition polishing mechanism 190.
It is preferable to provide a heat shield that shields the radiant heat directed toward. The heat shield can prevent the polishing mechanism 190 from overheating by reducing direct radiation of radiant heat to the polishing mechanism 190 as much as possible.

According to the above structure, when the deposition substrate 14 reaches the polishing position D, it is temporarily stopped, and the lifting shaft 194 is rotated by a predetermined angle to raise the polishing disk 191 together with the lifting platform 193, and the polishing disk 191. The upper surface (polishing surface) of can be brought into contact with the substrate surface 14a.
Then, electric power can be supplied to the motor 192 to rotate the polishing disk 191 to polish the substrate surface 14a. As a result, the deposits on the substrate surface 14a are forcibly scraped off, and the substrate surface 14a is restored to the initial state of production. Thus, if the deposition substrate 14 is held at a predetermined height position, the polishing disk 1 will reach this height position.
Since 91 can be raised to perform polishing, it is possible to prevent the mechanism for moving the deposition substrate 14 from becoming complicated.

Further, in this embodiment, the polishing device 9
0 is connected to the polishing belt 91 with which the substrate surface 14a of the deposition substrate 14 is in planar contact, the driving roller 92 and the driven roller 93 on which the polishing belt 91 is stretched, and one end of the driving roller 92. And a roller drive motor 94 for rotating the polishing belt 91. As a result, the polishing apparatus can be configured easily and with a small number of parts.

In this embodiment, the deposition substrate 1 is used.
The case where the substrate surface 14a of No. 4 is abraded by being brought into planar contact with the rotating polishing belt 91 has been described, but the present invention is not limited to this. That is, the deposition plate 14
Any material capable of removing the deposits from the substrate surface 14a may be used, and the deposits may be removed by injecting a liquid or gas onto the substrate surface 14a of the deposition plate 14. As a result, the deposition substrate 14 does not deform due to wear or the like, and can maintain the original shape even when it is repeatedly used.

[0070]

According to the first aspect of the invention, since the substrate surface of the deposition substrate can be polished by the polishing apparatus provided in the processing chamber, the deposition substrate does not have to be taken out of the processing chamber. The deposition substrate can be reused. As a result, the processing chamber can always be maintained in a constant atmosphere,
Since it becomes possible to continuously operate the deposition plate manufacturing apparatus for a long period of time, extremely high productivity can be obtained.

According to the second aspect of the invention, the polishing apparatus can be constructed easily and with a small number of parts.

According to the third aspect of the present invention, if the deposition substrate is held at a predetermined height position, the polishing disk can be raised to this height position for polishing. It is possible to prevent the moving mechanism from becoming complicated.

[Brief description of drawings]

FIG. 1 is a perspective view of a polishing machine body.

FIG. 2 is a schematic configuration diagram when the semiconductor substrate manufacturing apparatus is viewed from the front.

FIG. 3 is a schematic configuration diagram when a semiconductor substrate manufacturing apparatus is viewed from the side.

FIG. 4 is a perspective view of a carbon substrate gripping device.

FIG. 5 is a perspective view of a carbon substrate gripping device.

FIG. 6 is an exploded perspective view of a carbon substrate gripping device.

FIG. 7 is an explanatory diagram showing a state in which the deposition substrate is immersed in the molten metal.

FIG. 8 is an explanatory diagram showing a schematic configuration of a first cooling device.

FIG. 9 is a perspective view showing a stored state of molten metal.

FIG. 10 is an explanatory diagram showing a state of heat conduction of the crucible.

FIG. 11 is a perspective view of another polishing machine main body.

[Explanation of symbols]

14 Deposition substrate 14a substrate surface 90 Polishing machine body 91 polishing belt 92 Drive roller 93 Driven roller 94 roller drive motor 95 First cooling device 96 polishing support

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Atsushi Okuno             100, Takegahana Town, Ise City, Mie Prefecture             In Ise office (72) Inventor Masanori Tsuda             100, Takegahana Town, Ise City, Mie Prefecture             In Ise office (72) Inventor Kento Nakajima             100, Takegahana Town, Ise City, Mie Prefecture             In Ise office F-term (reference) 4G072 AA01 BB02 BB12 GG04 HH01                       NN01 NN05 UU01

Claims (3)

[Claims] 1. A sheet-shaped deposition plate in which a melted object is melted in a hermetically sealed processing chamber, the melted object is solidified and grown on the substrate surface of a deposition substrate, and then peeled off from the substrate surface. A deposition plate manufacturing apparatus for manufacturing a deposition plate manufacturing apparatus, comprising a polishing apparatus for polishing a substrate surface of the deposition substrate in a processing chamber. 2. The polishing apparatus is connected to a polishing belt on which the substrate surface of the deposition substrate is in planar contact, a driving roller and a driven roller on which the polishing belt is stretched, and one end of the driving roller. And a roller drive motor that rotationally drives the polishing belt, the deposition plate manufacturing apparatus according to claim 1. 3. The polishing apparatus includes a polishing machine main body having a polishing disk with which the substrate surface of the deposition substrate is in planar contact, and the polishing machine main body with respect to the substrate surface of the deposition substrate. The polishing machine main body lift for raising and lowering, and the installation stand which supports this polishing machine main body lift are provided.
The deposition plate manufacturing apparatus described in 1.