JP2003336062A - Phosphor and light-emitting device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a phosphor which is efficiently excited by ultraviolet rays or visible light to emit light; and a light-emitting device using the same. <P>SOLUTION: This phosphor is represented by the formula: M<SP>1</SP>O aM<SP>2</SP><SB>2</SB>O<SB>3</SB>bM<SP>3</SP><SB>2</SB>O<SB>5</SB>:cM<SP>4</SP>(wherein M<SP>1</SP>is at least one element selected from Ca, Sr, and Ba; M<SP>2</SP>is at least either Y or Gd; M<SP>3</SP>is at least either Nb or Ta; M<SP>4</SP>is at least one element selected from Mn, Eu, Tb, and Tm; 0.15≤a≤0.35; 0.15≤b≤0.35; and 0<c≤0.1). The light-emitting device is obtained by using the phosphor. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phosphor that is efficiently excited by ultraviolet rays or visible light to emit light, and a light emitting device using the same.

[0002]

2. Description of the Related Art A light-emitting element such as a nitride-based compound semiconductor capable of efficiently emitting ultraviolet light or visible light and a phosphor that is efficiently excited by ultraviolet light or visible light to emit light are combined to emit light of various emission wavelengths. Light emitting diode (hereinafter,
(Also referred to as LED) has been developed, but at present, various emission wavelengths are required to have high luminance in a wider field, and it is not sufficient, and further improvement is required.

Further, a phosphor which is excited by long-wavelength ultraviolet light having a wavelength range of 300 to 380 nm and emits light is used in a light emitting screen, for example, a decorative plate or the like mixed with concrete or glass. Has
Furthermore, a phosphor having high emission brightness is required.

On the other hand, the high-pressure mercury lamp uses 365 nm ultraviolet rays as a main excitation source, and as a phosphor for the high-pressure mercury lamp,
Conventional (Sr, Mg) ₃ PO ₄ : Sn phosphor, 3.5M
Instead of the gO.0.5MgF ₂ .GeO ₂ : Mn phosphor, a Y (P, V) O ₄ : Eu phosphor is mainly used. This Y (P, V) O ₄ : Eu phosphor is a red light emitting phosphor having a peak at 620 nm when excited with 365 nm ultraviolet light, but its emission characteristics were not sufficient and it was not satisfactory as a phosphor for a high pressure mercury lamp. . Therefore, there has been a strong demand for the development of a red-emitting phosphor for high-pressure mercury lamps having improved emission characteristics.

[0005]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a phosphor that is efficiently excited by ultraviolet rays or visible light to emit light, and a light emitting device using the same. Has an aim.

[0006]

DISCLOSURE OF THE INVENTION As a result of intensive studies made by the present inventors in order to solve the above-mentioned problems, the general formula is M ¹ O
_{^{· AM 2 2 O 3 · bM}} 3 2 O 5: cM 4 ( provided that at least one element ^{M 1} is selected Ca, Sr, and Ba,
M ² is at least one element selected from Y and Gd, M
³ is at least one element selected from Nb and Ta, M
⁴ is at least 1 selected from Mn, Eu, Tb and Tm
Indicates the element of the species. a is 0.15 ≦ a ≦ 0.35, b is 0.15 ≦ b ≦ 0.35, and c is 0 <c ≦ 0.1. The phosphor represented by) has a high emission intensity by excitation of ultraviolet rays or visible light in the wavelength range of 220 to 550 nm, and it is newly confirmed that a light emitting device such as a light emitting diode or a high pressure mercury lamp using this phosphor has excellent emission characteristics. The present invention has been completed and the present invention has been completed.

That is, the phosphor of the present invention has a general formula of M
¹ O · aM ² ₂ O ₃ · bM ³ ₂ O ₅ : cM ⁴ (however, M
¹ is at least one element selected from Ca, Sr and Ba, M ² is at least one element selected from Y and Gd, M ³ is at least one element selected from Nb and Ta, M ⁴ represents at least one element selected from Mn, Eu, Tb, and Tm. a is 0.15 ≦ a ≦ 0.35,
b is 0.15 ≦ b ≦ 0.35, and c is 0 <c ≦ 0.1. ) Is represented by.

The range of a is 0.2≤a≤0.3, b
The range of 0.2 ≦ b ≦ 0.3, the range of c is 0.0001
≦ c ≦ 0.02 is more preferable, a is 0.25, and b is particularly preferably 0.25.

The light emitting device and the light emitting screen of the present invention are
A light emitting device and a light emitting screen using the above-mentioned phosphor, and as the light emitting device, a light emitting device such as a light emitting diode or a high pressure mercury lamp is preferable, and at least a light emitting element in which a light emitting layer is a nitride semiconductor and the light emitting element emits light. A light emitting device having a phosphor that absorbs at least a part of emitted light and converts the wavelength to emit fluorescence, wherein an emission spectrum from the light emitting element is within 220 nm to 550 nm, and
Further preferred is a light emitting device characterized in that the phosphor is a phosphor represented by the above general formula.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION (Phosphor) The phosphor of the present invention is obtained as follows. For example, as phosphor materials, barium compounds, gadolinium compounds, when using a tantalum compound and manganese compound, _AGD general formula _BaO · for each compound _{2 O 3 · bTa 2 O 5} : cMn ( however,
a is 0.15 ≦ a ≦ 0.35 b is 0.15 ≦ b ≦ 0.3
5 and c are weighed so that 0 <c ≦ 0.1),
A mixture is obtained or a flux is added to these phosphor raw materials and mixed to obtain a raw material mixture. After filling the crucible with this raw material mixture, it is baked in the air at 1200 to 1600 ° C., cooled, and subjected to a dispersion treatment to obtain the phosphor of the present invention represented by the above general formula.

As the phosphor raw material, the following oxides or compounds which become oxides by thermal decomposition are preferably used. For example, calcium carbonate as the calcium compound,
Calcium oxide, calcium hydroxide, etc., strontium carbonate as strontium compound, strontium oxide, strontium hydroxide, etc., barium carbonate as barium compound, barium oxide, barium hydroxide, etc., yttrium compound as yttrium carbonate, yttrium oxide, yttrium hydroxide, etc., Gadolinium compounds such as gadolinium carbonate, gadolinium oxide and gadolinium hydroxide, niobium compounds such as niobium oxide, tantalum compounds such as tantalum oxide, europium compounds such as europium carbonate, europium oxide and europium hydroxide, manganese compounds such as manganese carbonate and manganese oxide. Compounds such as Also, as a phosphor material,
It is also possible to use a coprecipitate containing all or part of each metal element constituting the phosphor. For example, a coprecipitate can be obtained by adding an aqueous solution of alkali, carbonate or the like to an aqueous solution containing these elements, which can be dried or thermally decomposed before use. Further, a halide such as lithium chloride is preferable as the flux, and is added in the range of 0.01 to 1.0 parts by weight with respect to 100 parts by weight of the phosphor raw material.

A raw material mixture obtained by mixing the above-mentioned phosphor raw materials or a raw material mixture obtained by adding the above-mentioned flux to the above-mentioned phosphor raw materials and mixing them is filled in an alumina crucible or the like, and the mixture is heated to 120
Bake for several hours at 0 to 1600 ° C. After cooling, wet dispersion treatment is performed with a ball mill or the like, solid-liquid separation is performed, and drying is performed to obtain the phosphor of the present invention.

In FIG. 1, the general formula is BaO.0.25Gd ₂
O ₃ · 0.25Ta ₂ O _5: shows an X-ray diffraction diagram of the phosphor of Example 1 represented by 0.0025Mn. From this X-ray diffraction pattern, it is found that this phosphor matrix is Ba (Gd _0.5 T
a _0.5 ) O ₃ . Also, FIG.
And this phosphor and Y (P, V) O ₄ : Eu phosphor 36
The emission spectrum when excited by a 5-nm ultraviolet ray is shown.
From the figure, it can be seen that the main emission peak of this phosphor is at 690 nm and it emits deep red light, and the emission intensity is much higher than that of the conventional Y (P, V) O ₄ : Eu phosphor. Figure 3
2 shows the excitation spectrum of the phosphor of Example 1 for 690 nm emission. From the figure, it is understood that the excitation spectrum of this phosphor extends to a long wavelength region of 260 nm to 550 nm, and that the phosphor of the present invention is efficiently excited by ultraviolet rays or visible light in this wavelength region to emit light. Further, since it is efficiently excited by the 365 nm ultraviolet ray, it can be effectively used for a high pressure mercury lamp. Also, conventional Y
The high-pressure mercury lamp manufactured using the deep red light-emitting phosphor of the present invention in addition to the red light-emitting phosphor such as the (P, V) O ₄ : Eu phosphor is manufactured using only the conventional red light-emitting phosphor. Color rendering can be improved as compared with a high pressure mercury lamp.

In FIG. 4, the general formula is BaO.0.25Gd _2
3 shows emission spectra of the phosphor of Example 2 represented by O ₃ .0.25Ta ₂ O ₅ : 0.0025Eu and the Y (P, V) O ₄ : Eu phosphor excited by 365 nm ultraviolet light. From the figure, it can be seen that the main emission peak of this phosphor is at 625 nm and emits red light, and the emission intensity is higher than that of the conventional Y (P, V) O ₄ : Eu phosphor. FIG. 5 shows the excitation spectrum for the emission of 595 nm of the phosphor of Example 2. From the figure, the excitation spectrum of this phosphor is 2
It is in the range of 20 nm to 550 nm, and it can be seen that the phosphor of the present invention is efficiently excited by ultraviolet rays or visible light in this wavelength range to emit light. Further, since it is efficiently excited not only by the 365 nm ultraviolet ray but also by the 254 nm ultraviolet ray, it can be effectively used also for an ordinary fluorescent lamp.

The phosphor of the present invention contains 254 nm ultraviolet light and 36
Since it is efficiently excited by 5 nm ultraviolet light, it is not only effective for fluorescent lamps and high-pressure mercury lamps, but also has an emission spectrum of 220 nm to 550 n with the phosphor of the present invention.
By combining with a light emitting diode in the wavelength range of m, it can be applied to LEDs of various emission colors. For example,
As described above, when the red light emitting phosphor of the present invention containing at least one of Mn and Eu as an activator is combined with a light emitting diode that emits ultraviolet light having an emission spectrum of 220 to 400 nm, the emission color is red. An LED is obtained, and when an activator is combined with a blue light emitting phosphor of Tm, a blue LED is obtained, and when an activator is combined with a green light emitting phosphor of Tb, a green LED is obtained. Further, when the phosphor of the present invention and a light emitting diode that emits visible light having an emission spectrum of 400 to 550 nm are combined, the light emission excited by the visible light and emitted by the phosphor and the visible light of the light emitting diode are mixed. LEDs of various emission colors can be obtained. Further, by combining a plurality of types of phosphors including the phosphor of the present invention with the above light emitting diode, L of various emission colors can be obtained.
An ED can be made. In particular, in a white LED, the color rendering property can be improved by using the red light emitting phosphor of the present invention containing at least one of Mn and Eu as an activator.

Further, since the phosphor of the present invention is excited by long-wavelength ultraviolet light (wavelength range 300 to 380 nm) to emit light, it can be mixed with a light emitting screen such as concrete or glass and used as a decorative plate. This decorative plate exerts a decorative effect by the display effect under sunlight or a normal fluorescent lamp and the display effect under irradiation with long-wavelength ultraviolet rays emitted by a UV lamp.

The distribution of the phosphor is such that the phosphor-containing member,
Various adjustments can be made by adjusting the forming temperature, viscosity, shape of phosphor, particle size, particle size distribution and the like.
Therefore, the distribution concentration of the phosphor can be
Various selections can be made. In order to control such distribution with good dispersibility, the average particle diameter of the phosphor is 0.1 μm to 3 μm.
The thickness is preferably 0 μm, more preferably 0.1 to 20 μm. Here, the average particle size is the Fisher sub-sieve sizer (FSS.
It can be measured using S).

In FIG. 6, the general formula is BaO.aGd ₂ O ₃
The relationship between the emission intensity and the Gd ₂ O ₃ amount (a value) when excited with 365 nm ultraviolet light is shown for various phosphors represented by 0.25 Ta ₂ O ₅ : 0.0025Mn. As is clear from this figure, the emission intensity has an a value of 0.15 ≦ a
It can be seen that it is high in the range of ≦ 0.35, and is extremely high particularly in the range of 0.2 ≦ a ≦ 0.3. Also, FIG.
, The general formula _{BaO · 0.25Gd 2 O 3 · bTa} 2 O
₅ : 0.0025 Mn of various phosphors, the emission intensity and Ta when excited by 365 nm ultraviolet light
The relationship of the amount of ₂ O ₅ (b value) is shown. As is clear from this figure, the emission intensity is high when the b value is in the range of 0.15 ≦ b ≦ 0.35, and is particularly high in the range of 0.2 ≦ b ≦ 0.3. . In FIG. 8, the general formula is BaO.0.
The relationship between the emission intensity and the Mn amount (c value) when excited with 365 nm ultraviolet light is shown for various phosphors represented by 25Gd ₂ O ₃ .0.25Ta ₂ O ₅ : cMn. As is clear from this figure, the emission intensity has a c value of 0 <c ≦ 0.1.
It is understood that the value is high in the range of 0, and is extremely high particularly in the range of 0.0001 ≦ c ≦ 0.02. Such a tendency of the light emitting characteristics is the same in the phosphor of the present invention having an activator other than Mn.

(Light Emitting Device) The light emitting device of the present invention is a light emitting device such as an LED or a high pressure mercury lamp.
The D light emitting device will be described. This light emitting device is a light emitting device which is a combination of the phosphor of the present invention and a semiconductor light emitting element that emits light in the wavelength range of 220 nm to 550 nm. Examples of the semiconductor light emitting element include various semiconductors such as ZnSe and GaN. A gallium nitride based semiconductor is preferably used. FIG. 9 shows a chip type LED as an example of the light emitting device of the present invention. An LED chip 102 made of gallium nitride based semiconductor is flip-chip bonded and fixed with solder 105 in a housing 103 of a chip type LED. Each electrode of the LED chip 102 and each electrode 104 provided on the housing are fixed and electrically connected to each other. What mixed and dispersed the phosphor of the present invention with SiO ₂ is applied to the glass 106 forming a part of the housing. A chip-type LED can be configured by disposing sealing glass on the housing. By supplying power to such a light emitting diode, the LED chip 102 can emit light. LED chip 1
It is possible to use a light emitting device that emits light from a fluorescent substance that is excited by ultraviolet rays or visible light emitted from 02. next,
The light emitting element of this light emitting device will be described.

(Light Emitting Element) The light emitting element used in the present invention is
A nitride-based compound semiconductor, which has an emission spectrum of 220 nm to 550 nm and can efficiently excite the phosphor, is preferably used. The light emitting element is MO
It is obtained by forming a nitride-based compound semiconductor on a substrate by a CVD method, an HVPE method, or the like, and is preferably In _α Al _β G
a _{1-α- β} N (where 0 ≦ α, 0 ≦ β, α + β ≦ 1)
As a light emitting layer. The semiconductor structure is M
A homo structure, a hetero structure, or a double hetero structure having an IS junction, a PIN junction, a pn junction, or the like can be given. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Further, the semiconductor active layer may be formed as a thin film in which a quantum effect is generated, and may have a single quantum well structure or a multiple quantum well structure.

The embodiments of the present invention will be described below, but it goes without saying that the present invention is not limited to the specific embodiments.

[0022]

EXAMPLES Example 1 were weighed as follows as phosphor _{materials, BaCO 3 ················· 98.65g Gd 2 O} 3 ····・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 45.31g Ta ₂ O ₅・ ・ ・ 55.23g MnCO ₃・ ・ ・・ ・ ・ ・ ・ ・ ・ ・ 0.144g Put these in a mixer and mix. The raw material mixture was filled in an alumina crucible and heated in an air atmosphere using an electric furnace.
Bake for 6 hours at 5 ° C. After cooling, ball milling is performed by a wet method, solid-liquid separation is performed, and then dehydration drying is performed. In this way
Composition formula _{BaO · 0.25Gd 2 O 3 · 0.25Ta} 2
O ₅ : 0.0025 Mn, having an average particle size of 6.0
A μm phosphor of the invention is obtained. This phosphor is 365nm
It emits deep red light when excited by ultraviolet rays, and the chromaticity coordinate values are (x, y)
= (0.706, 0.272).

[Example 2] MnCO as a phosphor raw material_Three
Eu instead of 0.144g_TwoO_ThreeUse 0.220g
The composition formula is BaO.
0.25Gd_TwoO _Three・ 0.25 Ta_TwoO₅: 0.002
The firefly of the present invention represented by 5Eu and having an average particle size of 6.5 μm.
Get the light body. This phosphor is red when excited by 365 nm UV light.
The chromaticity coordinate value is (x, y) = (0.515,
0.328).

[Example 3] MnCO as a phosphor raw material_Three
Tb instead of 0.144g_FourO₇Use 0.234g
The composition formula is BaO.
0.25Gd_TwoO _Three・ 0.25 Ta_TwoO₅: 0.002
The firefly of the present invention represented by 5 Tb and having an average particle size of 6.3 μm.
Get the light body. This phosphor is green when excited with 365 nm UV light.
Emits light.

[Example 4] MnCO as a phosphor raw material_Three
Tm instead of 0.144g_TwoO_ThreeUse 0.241g
The composition formula is BaO.
0.25Gd_TwoO _Three・ 0.25 Ta_TwoO₅: 0.002
The firefly of the present invention represented by 5 Tm and having an average particle size of 6.4 μm.
Get the light body. This phosphor is blue when excited with 365 nm UV light.
Emits light.

Example 5 MnCO ₃ as a phosphor raw material
Eu ₂ O ₃ 0.440 g and Mn instead of 0.144 g
CO ₃ except using 0.287g, the same procedure as in Example 1, composition formula BaO · 0.25Gd ₂ O ₃ · 0.2
A phosphor of the present invention having an average particle size of 6.1 μm, represented by 5Ta ₂ O ₅ : 0.005Eu, 0.005Mn, is obtained.
This phosphor emits deep red light when excited with 365 nm ultraviolet light.

Example 6 BaCO as a phosphor raw material_Three
SrCO instead of 98.65g_ThreeUse 73.80g
The composition formula is SrO.
0.25Gd_TwoO _Three・ 0.25 Ta_TwoO₅: 0.002
The firefly of the present invention represented by 5Mn and having an average particle size of 5.9 μm.
Get the light body. This phosphor is deep red when excited with 365 nm UV light.
It emits color.

[Example 7] BaCO as a phosphor raw material_Three
CaCO instead of 98.65g_ThreeUses 50.00g
The composition formula is CaO.
0.25Gd_TwoO _Three・ 0.25 Ta_TwoO₅: 0.002
The firefly of the present invention represented by 5Mn and having an average particle size of 5.8 μm.
Get the light body. This phosphor is deep red when excited with 365 nm UV light.
It emits color.

[Example 8] Ta as a phosphor material_TwoO₅
Nb instead of 55.23g_TwoO₅Use 33.23g
The composition formula is BaO.
0.25Gd_TwoO _Three・ 0.25 Nb_TwoO₅: 0.002
The firefly of the present invention represented by 5Mn and having an average particle size of 5.6 μm.
Get the light body. This phosphor is deep red when excited with 365 nm UV light.
It emits color.

[Comparative Example 1] MnCO ₃ as a phosphor raw material
A phosphor having an average particle size of 6.0 μm and having a composition formula represented by BaO.0.25Gd ₂ O ₃ 0.25Ta ₂ O ₅ is obtained in the same manner as in Example 1 except that is not used. This phosphor emits no light when excited with 365 nm ultraviolet light.

[Embodiment 9] The LED chip has a small number of light emitting layers.
The active layer of the at least gallium nitride-based compound semiconductor is In
_0.01Ga_0.99N, with a main emission peak of 368
nm LED chip is used. LED chips are cleaned
TMG (trimethylgallium) on the sapphire substrate
Gas, TMI (trimethyl indium) gas, nitrogen gas
Gas and dopant gas together with carrier gas
A gallium nitride compound semiconductor is formed by the CVD method.
It is formed by and. SiH as dopant gas_FourWhen
Cp _TwoIt is formed by switching between Mg and
It Gallium nitride formed at low temperature on sapphire substrate
A semiconductor buffer layer and gallium nitride having n conductivity
Contact layer made of um semiconductor, nitrogen having n-type conductivity
A gallium aluminum nitride semiconductor cladding layer, p
Gallium aluminum nitride semiconductor with type conductivity
Between the clad layer and the contact layer having p-type conductivity
Then, an InGaN active layer is formed and a pn junction is formed.
(Note that the p-type contact layer has impurities on the active layer side.
The low impedance on the p-type clad layer prevents the diffusion of Mg.
Highly pure gallium nitride layer and high impurities in contact with the electrode
And a concentrated gallium nitride layer. In addition, the active layer
It is grown to a film thickness of 400 Å. P type conductivity
A semiconductor with properties is annealed at 400 ° C or higher after film formation.
I have it. ) After exposing the semiconductor surface of each pn by etching,
Each electrode is formed by the putting method. This
The scribe line of the completed semiconductor wafer
LED as a light emitting element after pulling
Form chips.

An LED chip is die-bonded with an epoxy resin to a mount lead having a cup at the tip of a silver-plated copper lead frame. Each electrode of the LED chip and each of the mount lead and the inner lead are wire-bonded with a gold wire to establish electrical continuity.

50 parts by weight of the phosphor obtained in Example 1 is placed in the cup on the mount lead. The phosphor is enclosed in the TiO ₂ layer using the sol-gel method. Thus the LED
A coating portion containing a phosphor is formed on the chip. Then, a can type light emitting diode is formed in which a glass lens is fitted with a metal frame and purged with N ₂ while insulating the leads from each other for the purpose of further protecting the LED chip and the phosphor from external stress, moisture, dust and the like.
In this way, an LED whose emission color is deep red is obtained.

Further, as a weather resistance test, the temperature is 25 ° C. and 60 mA.
Energization, temperature 25 ° C 20mA energization, temperature 60 ° C 90% RH
In each test under a current of 20 mA, no change due to the phosphor is observed even after 500 hours have passed.

[Example 10] An LED emitting red light is obtained in the same manner as in Example 9 except that the phosphor obtained in Example 2 is used instead of the phosphor obtained in Example 1.

[Example 11] An LED emitting green light is obtained in the same manner as in Example 9 except that the phosphor obtained in Example 3 is used in place of the phosphor obtained in Example 1.

[Example 12] An LED emitting blue light is obtained in the same manner as in Example 9 except that the phosphor obtained in Example 4 is used in place of the phosphor obtained in Example 1.

Comparative Example 2 Instead of the phosphor obtained in Example 1, BaMg ₂ Al ₁₆ O ₂₇ : Eu blue light emitting phosphor, BaMg ₂ Al ₁₆ O ₂₇ : Eu: Mn green light emitting phosphor and Y ₂ O. An LED emitting white light is obtained in the same manner as in Example 9 except that the ₂ S: Eu red light emitting phosphor is used. The average color rendering index Ra of this white LED is 80.

Example 13 In addition to the phosphor obtained in Example 1, BaMg ₂ Al ₁₆ O ₂₇ : Eu blue light emitting phosphor, BaMg ₂ Al ₁₆ O ₂₇ : Eu: Mn green light emitting phosphor and Y ₂ O. A warm white LED with a slightly reddish emission color is obtained in the same manner as in Example 9 except that the ₂ S: Eu red light emitting phosphor is used. The average color rendering index Ra of this white LED is 87, which is about 9% higher than that of the white LED of Comparative Example 2.

[0040]

As described above, since the phosphor of the present invention is efficiently excited by ultraviolet rays or visible light in the wavelength range of 220 nm to 550 nm to emit light, it emits light from a light emitting screen, a light emitting diode, a high pressure mercury lamp or the like. It can be effectively used for devices. Furthermore, by using the phosphor of the present invention or a plurality of types of phosphors containing the phosphor of the present invention, LEDs of various emission colors can be produced, and in the case of a white LED, color rendering can be improved. it can.

[Brief description of drawings]

FIG. 1 is an X-ray diffraction diagram of the phosphor of Example 1.

FIG. 2 Emission spectrum of the phosphor of Example 1

FIG. 3 Excitation spectrum of the phosphor of Example 1

FIG. 4 Emission spectrum of the phosphor of Example 2

FIG. 5: Excitation spectrum of the phosphor of Example 2

FIG. 6 is a graph showing the relationship between emission intensity and Gd ₂ O ₃ amount (a value).

FIG. 7 is a graph showing the relationship between emission intensity and Ta ₂ O ₅ amount (b value).

FIG. 8 is a graph showing the relationship between emission intensity and Mn amount (c value).

FIG. 9 is a schematic cross-sectional view of a light emitting device of the present invention.

FIG. 10 is a schematic cross-sectional view of another light emitting device of the present invention.

[Explanation of symbols]

101, 201 ... Coating section 102, 202 ... Phosphor-containing light emitting element 103 ... Housing 104 ... Electrode 105 provided on housing ... Solder 106 ... Glass 203・ ・ ・ Conductive wire 204 ・ ・ ・ Low melting point glass 205 serving as a translucent inorganic member ・ ・ ・ Mount lead 206 ・ ・ ・ Inner lead 207 ・ ・ ・ Package 208 ・ ・ ・ Low as an insulating sealant Melting point glass

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4H001 CA04 CA05 XA07 XA08 XA20                       XA31 XA38 XA39 XA41 XA49                       XA56 XA64 XA73 YA25 YA63                       YA65 YA69                 5F041 CA40 DA02 DA04 DA07 DA09                       DA12 DA36 DA64 DA77 DB03                       DB09 EE25 FF01 FF11

Claims (5)

[Claims] 1. The general formula is M ¹ O.aM ² ₂ O ₃ .bM ^3.
₂ O ₅ : cM ⁴ (provided that M ¹ is at least one element selected from Ca, Sr, and Ba, M ² is at least one element selected from Y and Gd, and M ³ is Nb and Ta. At least one element selected, M ⁴ is Mn, Eu, Tb,
At least one element selected from Tm is shown. a is 0.15 ≦ a ≦ 0.35, b is 0.15 ≦ b ≦ 0.3
5 and c are 0 <c ≦ 0.1. ) A phosphor represented by: 2. A in the general formula is 0.2 ≦ a ≦ 0.3,
b is 0.2 ≦ b ≦ 0.3, c is 0.0001 ≦ c ≦ 0.
The phosphor according to claim 1, wherein the phosphor has a range of 02. 3. A light emitting device using the phosphor according to claim 1. 4. A light-emitting device comprising a light-emitting element having at least a light-emitting layer made of a nitride semiconductor, and a phosphor that absorbs at least a part of light emitted from the light-emitting element and converts the wavelength to emit fluorescence. The emission spectrum of the light emitting device is within 220 nm to 550 nm, and the phosphor has a general formula of M ¹ O.aM ² ₂ O ₃ .bM ³ ₂ O ₅ : c.
M ⁴ (provided that M ¹ is at least one element selected from Ca, Sr, and Ba, M ² is at least one element selected from Y and Gd, and M ³ is at least one selected from Nb and Ta) One element, M ⁴ is at least one element selected from Mn, Eu, Tb, and Tm, and a is 0.15 ≦ a.
≤ 0.35, b is 0.15 ≤ b ≤ 0.35, c is 0
<C ≦ 0.1. ) A light-emitting device characterized by being a phosphor represented by 5. A light-emitting screen using the phosphor according to claim 1.