JP2003332687A5 - - Google Patents
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- JP2003332687A5 JP2003332687A5 JP2003127648A JP2003127648A JP2003332687A5 JP 2003332687 A5 JP2003332687 A5 JP 2003332687A5 JP 2003127648 A JP2003127648 A JP 2003127648A JP 2003127648 A JP2003127648 A JP 2003127648A JP 2003332687 A5 JP2003332687 A5 JP 2003332687A5
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- JP
- Japan
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/151,631 | 2002-05-16 | ||
| US10/151,631 US6953702B2 (en) | 2002-05-16 | 2002-05-16 | Fixed wavelength vertical cavity optical devices and method of manufacture therefor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003332687A JP2003332687A (ja) | 2003-11-21 |
| JP2003332687A5 true JP2003332687A5 (ja) | 2006-06-15 |
| JP4624651B2 JP4624651B2 (ja) | 2011-02-02 |
Family
ID=29269813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003127648A Expired - Fee Related JP4624651B2 (ja) | 2002-05-16 | 2003-05-06 | 垂直空洞光デバイスの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6953702B2 (ja) |
| EP (1) | EP1363370B1 (ja) |
| JP (1) | JP4624651B2 (ja) |
| DE (1) | DE60328557D1 (ja) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7550794B2 (en) | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
| US7297471B1 (en) | 2003-04-15 | 2007-11-20 | Idc, Llc | Method for manufacturing an array of interferometric modulators |
| TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
| JP2005259885A (ja) * | 2004-03-10 | 2005-09-22 | Seiko Epson Corp | 光素子ウェハおよびその製造方法、光素子ウェハのバーンイン装置、ならびに光素子ウェハのバーンイン方法 |
| EP2246726B1 (en) | 2004-07-29 | 2013-04-03 | QUALCOMM MEMS Technologies, Inc. | System and method for micro-electromechanical operating of an interferometric modulator |
| TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
| EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
| JP2009503565A (ja) | 2005-07-22 | 2009-01-29 | クアルコム，インコーポレイテッド | Ｍｅｍｓデバイスのための支持構造、およびその方法 |
| US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
| US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
| US7450295B2 (en) | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
| US7321457B2 (en) | 2006-06-01 | 2008-01-22 | Qualcomm Incorporated | Process and structure for fabrication of MEMS device having isolated edge posts |
| US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
| US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
| US7851239B2 (en) | 2008-06-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices |
| US7864403B2 (en) | 2009-03-27 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Post-release adjustment of interferometric modulator reflectivity |
| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| CN109906518B (zh) * | 2016-12-05 | 2022-07-01 | 歌尔股份有限公司 | 微激光二极管转移方法和微激光二极管显示装置制造方法 |
| US20200006924A1 (en) * | 2016-12-05 | 2020-01-02 | Goertek, Inc. | Micro Laser Diode Display Device and Electronics Apparatus |
| US10305254B2 (en) * | 2017-09-18 | 2019-05-28 | Finisar Corporation | VCSEL with elliptical aperture having reduced rin |
| US11264527B2 (en) | 2018-10-01 | 2022-03-01 | Medtronic, Inc. | Integrated circuit package and system using same |
| US10950511B2 (en) | 2018-10-30 | 2021-03-16 | Medtronic, Inc. | Die carrier package and method of forming same |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5142414A (en) * | 1991-04-22 | 1992-08-25 | Koehler Dale R | Electrically actuatable temporal tristimulus-color device |
| US5291502A (en) | 1992-09-04 | 1994-03-01 | The Board Of Trustees Of The Leland Stanford, Jr. University | Electrostatically tunable optical device and optical interconnect for processors |
| US5301201A (en) * | 1993-03-01 | 1994-04-05 | At&T Bell Laboratories | Article comprising a tunable semiconductor laser |
| US5771253A (en) * | 1995-10-13 | 1998-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | High performance micromechanical tunable verticle cavity surface emitting laser |
| US6438149B1 (en) * | 1998-06-26 | 2002-08-20 | Coretek, Inc. | Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter |
| EP1053574A4 (en) * | 1997-12-29 | 2002-11-06 | Coretek Inc | FABRY-PEROT FILTER AND LASER WITH SURFACE EMISSION AND VERTICAL, CONFOCAL CAVITY, TUNABLE BY MICROELECTROMECHANICS |
| US5991326A (en) * | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
| US6584126B2 (en) * | 1998-06-26 | 2003-06-24 | Coretek, Inc. | Tunable Fabry-Perot filter and tunable vertical cavity surface emitting laser |
| JP2000028931A (ja) * | 1998-07-09 | 2000-01-28 | Tdk Corp | 多波長フィルタアレイ |
| JP2000058958A (ja) * | 1998-08-06 | 2000-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 多波長面発光半導体レーザアレイ |
| US6154471A (en) * | 1999-02-22 | 2000-11-28 | Lucent Technologies Inc. | Magnetically tunable and latchable broad-range semiconductor laser |
| US6424669B1 (en) * | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
| AU2470301A (en) * | 1999-10-29 | 2001-05-08 | E20 Communications, Inc. | Modulated integrated optically pumped vertical cavity surface emitting lasers |
| US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
| US6581465B1 (en) * | 2001-03-14 | 2003-06-24 | The United States Of America As Represented By The Secretary Of The Navy | Micro-electro-mechanical systems ultra-sensitive accelerometer |
| US6546029B2 (en) * | 2001-03-15 | 2003-04-08 | Ecole Polytechnique Federale De Lausanne | Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof |
| US6542531B2 (en) * | 2001-03-15 | 2003-04-01 | Ecole Polytechnique Federale De Lausanne | Vertical cavity surface emitting laser and a method of fabrication thereof |
| US6556610B1 (en) * | 2001-04-12 | 2003-04-29 | E20 Communications, Inc. | Semiconductor lasers |
| US20020176473A1 (en) * | 2001-05-23 | 2002-11-28 | Aram Mooradian | Wavelength selectable, controlled chirp, semiconductor laser |
| US6611539B2 (en) * | 2001-05-29 | 2003-08-26 | Nsc Nanosemiconductor Gmbh | Wavelength-tunable vertical cavity surface emitting laser and method of making same |
| US6717964B2 (en) * | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
| US20030058902A1 (en) * | 2001-09-27 | 2003-03-27 | Wupen Yuen | Method for improving thermal efficiency of a semiconductor laser |
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2002
- 2002-05-16 US US10/151,631 patent/US6953702B2/en not_active Expired - Fee Related
-
2003
- 2003-02-03 DE DE60328557T patent/DE60328557D1/de not_active Expired - Fee Related
- 2003-02-03 EP EP03002344A patent/EP1363370B1/en not_active Expired - Fee Related
- 2003-05-06 JP JP2003127648A patent/JP4624651B2/ja not_active Expired - Fee Related