JP2003321767A - Vapor deposition method for thin film, organic electroluminescence device, method for manufacturing organic electroluminescence device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition method for thin films capable of increasing the rate of vapor deposition while making film thicknesses more uniform in depositing the thin films on a substrate by evaporation, an organic electroluminescence device, a method for manufacturing the organic electroluminescence device, and electronic apparatus. <P>SOLUTION: The vapor deposition method for the thin films of forming the thin films by depositing a material 2 to be deposited by evaporation on the substrate 1 comprises arranging the substrate 1 and a plurality of vapor deposition boats V1, V2, V3, and V4 in which vapor deposition sources are put, into a vapor deposition vessel and performing vapor deposition. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition method, an organic electroluminescence device, and an organic electroluminescence device, which are suitable for uniforming the film thickness and increasing the deposition rate when depositing a thin film on a substrate. The present invention relates to a method for manufacturing a device and electronic equipment.

[0002]

2. Description of the Related Art Hitherto, as a method for forming a thin film on a semiconductor substrate or the like, there has been a vapor deposition method. In this method, a vapor deposition source and a substrate are arranged in a vapor deposition tank of a vapor deposition apparatus, a vapor deposition material is evaporated by heating the vapor deposition source, and the vapor deposition material is deposited on the substrate. Here, the vapor deposition source is contained in a single container-shaped vapor deposition port placed at the bottom of the vapor deposition layer. Then, the substrate was attached to the rotating shaft, and the vapor deposition was deposited while rotating.

[0003]

However, in the above-mentioned conventional vapor deposition method, the thickness of the thin film deposited on the substrate is uniform except that the substrate is simply rotated and the distance between the substrate and the vapor deposition source is changed. There was no technology to secure sex.

Therefore, in the above-mentioned conventional vapor deposition method, when the film thickness to be formed is relatively thin, the number of rotations n of the substrate during the vapor deposition period is small, so that the vapor deposition surface of the substrate is n times over the vapor deposition source. There is a problem that it is difficult to secure the uniformity of the film thickness because the difference in film thickness between the part that has passed and the part that has passed n-1 times becomes large. The difference in film thickness here is the film thickness group.

Further, in the above conventional vapor deposition method, if the distance between the substrate and the vapor deposition source is increased, the vapor deposition tank must be enlarged, and the size of the substrate is restricted. there were.

Further, in the above conventional vapor deposition method, when the film thickness to be formed is relatively thick, the heating temperature of the vapor deposition source must be raised to increase the vapor deposition rate, and the vapor deposition source is used as the vapor deposition source. There is also a problem in that an unfavorable phenomenon such as jumping of the material is generated.

The present invention has been made in view of the above-mentioned circumstances, and when a thin film is vapor-deposited on a substrate, it is possible to increase the vapor deposition rate while making the film thickness uniform. An object of the present invention is to provide a luminescence device, a method for manufacturing an organic electroluminescence device, and an electronic device.

[0008]

In order to achieve the above-mentioned object, the thin film deposition method of the present invention is a thin film deposition method of depositing a deposition material on a substrate to form a thin film. It is characterized in that a plurality of vapor deposition boats in which vapor deposition sources are placed are arranged in a vapor deposition tank to perform vapor deposition. According to such a method, it is possible to form a film at a high speed under mild conditions without raising the temperature of the vapor deposition source as compared with the conventional case, when performing vapor deposition using one vapor deposition boat.

Further, in the thin film deposition method of the present invention, it is preferable that the plurality of deposition boats are arranged so that the difference between the maximum value and the minimum value of the thickness of the thin film deposited on the substrate is minimized. . According to such a method, it is possible to form a film at high speed under mild conditions, and to make the film thickness uniform without rotating the substrate while keeping the deposition tank compact. .

Further, in the thin film vapor deposition method of the present invention, at the time of vapor deposition, each of the plurality of vapor deposition boats is filled with the vapor deposition source made of the same material, and the vapor deposition is simultaneously started by the plurality of vapor deposition boats. It is preferable to end the vapor deposition at the same time with the vapor deposition boat. According to this method,
It is possible to form a film at high speed under mild conditions, and to further homogenize the film thickness.

Further, in the thin film vapor deposition method of the present invention, it is preferable that the vapor deposition strength, which is the amount of the vapor deposition material emitted from the vapor deposition source per unit time during vapor deposition, be substantially the same in each vapor deposition boat. According to such a method, the film thickness can be easily made uniform.

Further, in the thin film vapor deposition method of the present invention, it is preferable that the number of the vapor deposition boats is at least four when the substrate has a quadrangular shape. According to such a method, when forming a thin film on a quadrangular substrate, it is possible to form a film at a high speed particularly under mild conditions and to make the film thickness uniform.

In the thin film vapor deposition method of the present invention, the plurality of vapor deposition boats are arranged on a plane, and
It is preferable that the substrates are arranged at least at respective vertices of a quadrangle smaller than the quadrangle of the substrate.

Further, in the thin film vapor deposition method of the present invention, the vapor deposition surface of the substrate and the plane on which the plurality of vapor deposition boats are arranged face each other in parallel and are lines orthogonal to each other. It is preferable to arrange the substrate and the plurality of vapor deposition boats so that a line that passes through a center point of a quadrangular shape on the plane where the vapor deposition boat is arranged at the apex also passes through the center point of the vapor deposition surface. According to such a method, by disposing a plurality of vapor deposition boats as described above, it becomes easy to make the film thickness uniform.

Further, in the thin film vapor deposition method of the present invention, the quadrangular shape on which the vapor deposition boat is arranged at the apex is either a rectangle or a square, and the length of each side of the quadrangular shape. Is the shape of the substrate, the vapor deposition strength which is the amount of vapor deposition per unit time released from the vapor deposition source of each vapor deposition boat during vapor deposition, the distance between the substrate and the plane on which the vapor deposition boat is arranged, It is preferable to calculate based on at least one of them. According to such a method, when a thin film is formed on a rectangular substrate, the film is formed at a high speed under mild conditions, and the deposition tank is kept compact, and the film is not rotated. It is possible to easily calculate the position of each vapor deposition boat that can achieve uniform thickness.

Further, in the thin film vapor deposition method of the present invention, the substrate is rotated so that the vapor deposition position on the substrate at the start of vapor deposition and the vapor deposition position on the substrate at the end of vapor deposition are substantially the same position. Preferably. According to such a method, all the portions on the vapor deposition surface of the substrate pass over the vapor deposition source the same number of times, so that the difference in vapor deposition film thickness (group of vapor deposition film thickness) can be minimized.

Further, in the thin film deposition method of the present invention, a value obtained by dividing the difference between the maximum value and the minimum value in the thickness of the thin film deposited on the substrate by the minimum value is defined as the film thickness value. It is preferable that the target film thickness unevenness value is defined as a target film thickness unevenness value, and the rotation speed is set such that the target film thickness unevenness value is larger than the reciprocal of the rotation speed of the substrate. According to such a method, by setting the number of rotations of the substrate under the above conditions, the film thickness deviation value can be made equal to or less than the target film thickness deviation value, and the film thickness can be made uniform.

Further, in the thin film vapor deposition method of the present invention, when the rotation speed cannot be made larger than the reciprocal of the target film thickness area value, the thin film is formed by the vapor deposition per unit time. It is preferable to adjust the film formation rate. According to such a method, the thickness of the thin film formed on the substrate is very thin, and the above condition (the number of revolutions is made larger than the reciprocal of the target film thickness value) unless the rotational speed of the device is set to the upper limit or more. Even if the film thickness cannot be satisfied, the condition can be satisfied by adjusting the film formation rate, so that the film thickness variation value can be made equal to or less than the target film thickness variation value, and the film thickness can be made uniform. be able to.

Further, in the thin film vapor deposition method of the present invention, the rotation speed of the substrate is defined as N [rpm], and the film formation speed is α.
[Angstrom / sec] and the desired film thickness is d
[Angstrom], and the difference between the maximum value and the minimum value in the thickness of the thin film deposited on the substrate is divided by the minimum value to define the value as the film thickness group, and the target film thickness group is defined. When the value is defined as the target film thickness group value a, the target film thickness group value a> {(60 * α) / (N * d)} is set within the rotation speed N and the film forming rate α. It is preferable to adjust at least one of the above. According to such a method, by setting the rotation speed N or the film formation rate α in accordance with the target film thickness variation value a and the desired film thickness d, the film thickness variation value is set as a target at an arbitrary desired film thickness d. The film thickness can be set to be equal to or less than the threshold value, and the film thickness can be made uniform.

The organic electroluminescence device of the present invention is characterized by being manufactured by using the above-mentioned thin film vapor deposition method. According to such an organic electroluminescence device, when forming a thin film on a substrate in the manufacturing process of the organic electroluminescence device, it is possible to form a film at high speed under mild conditions and to make the film thickness uniform. Therefore, a high-quality organic electroluminescent device can be manufactured in a short period of time. In addition, since the film thickness of the organic layer or the metal layer, which is a constituent element of the organic electroluminescence device, can be made uniform, it is possible to make the light emission characteristics of each part uniform, and to provide a high-quality display. It is also possible to extend the life of the product.

Further, the organic electroluminescence device of the present invention is characterized in that at least one of an organic layer and a metal layer is formed by using the above-mentioned thin film vapor deposition method.

The organic electroluminescence device of the present invention preferably comprises a polymer material.
According to such a method, by using a polymer material,
It is possible to further simplify and speed up the manufacturing process, make it possible to make the emission characteristics of each part uniform, and display a high-quality display, thus extending the product life. Become.

Further, in the organic electroluminescence device of the present invention, it is preferable that the polymer material is a conductive polymer.

The method for manufacturing an organic electroluminescence device of the present invention is characterized in that the organic electroluminescence device is produced by using the above-described thin film deposition method.

The electrical equipment of the present invention is characterized by being produced by using the above-mentioned thin film vapor deposition method. According to the present invention, a thin film of a substrate, which is a component of an electric device, can be formed at a high speed under mild conditions, and the thickness of the thin film can be made uniform. It is possible to improve various performances and prolong the product life.

Further, the electric equipment of the present invention is characterized by including the organic electroluminescence device.
According to the present invention, an electric device including an organic EL device (display section) manufactured by using the above-described thin film vapor deposition method is provided, so that it is possible to make the light emission characteristics of each part of the display section uniform. The difference in light emission characteristics (display group) caused by the difference in film thickness (film thickness group) can be made much smaller than in the past, and further, it becomes possible to manufacture easily and quickly.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION A thin film deposition method according to the present invention will be described below with reference to the drawings. This evaporation method is
A plurality of vapor deposition boats are arranged in the vapor deposition tank in order to make the thickness of the film uniform and to form the film at high speed.

(First Embodiment) A thin film deposition method according to a first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic conceptual view showing a thin film deposition method according to the present embodiment.

This figure shows a substrate 1 placed in a vapor deposition tank,
Similarly, four vapor deposition boats V1 and V arranged in the vapor deposition tank
2, V3 and V4 are shown. The substrate 1 has a thin film formed on its surface by vapor deposition. Then, as the substrate 1, for example, a substrate used in the manufacturing process of the organic EL device is applied. Further, a rotating shaft (not shown) is connected to the substantial center of the substrate 1, and the substrate 1 also rotates with the rotation of the rotating shaft.

Each vapor deposition boat V1, V2, V3, V4 is filled with a vapor deposition source (not shown). At the time of vapor deposition, the vapor deposition source is heated to evaporate, and the vapor deposition product 2 is emitted from the vapor deposition boats V1, V2, V3, and V4. The deposit 2 is deposited on the surface of the substrate 1 to form a thin film.

As a vapor deposition source for filling the vapor deposition boats V1, V2, V3 and V4, for example, a substance forming an organic layer or a metal layer of an organic EL device can be applied. Specifically, when the substrate 1 is used to manufacture an organic EL device and the electrode layer of the organic EL device is formed on the substrate 1, aluminum (Al) or magnesium (M) is used as a vapor deposition source.
A metal composed of g), gold (Au), silver (Ag), or the like is used. When the hole injection layer of the organic EL device is formed on the substrate 1, copper phthalocyanine (CuPc) is used as a vapor deposition source.
Or polyphenylene vinylene, which is polytetrahydrothiophenylphenylene, 1,1-bis- (4-N, N-
Ditolylaminophenyl) cyclohexane, tris (8
-Hydroxyquinolinol) aluminum, etc., but copper phthalocyanine (CuPc) is particularly preferably used.

For example, when forming an electrode layer of an organic EL device on the substrate 1, a thin film of aluminum (Al) having a film thickness of about 2000 Å to 5000 Å is vapor-deposited on the substrate 1. At this time, if the deposition rate, which is the amount of thin film formed per unit time, is 0.6 [nm / sec] per deposition boat, one deposition boat is used to form the electrode layer. From 93 hours to 2
It will take 31 hours. However, in this embodiment,
Since four vapor deposition boats V1, V2, V3, and V4 are used, the vapor deposition rate is 2.4 [nm / sec] in total, and in the above case, the electrode layer can be formed in 23 hours to 58 hours. It will be possible.

Therefore, according to the thin film vapor deposition method of the present embodiment, the vapor deposition time can be reduced to 1/4 of that of the conventional method. Further, according to the thin film vapor deposition method of the present embodiment, it is possible to form a film at a high speed without raising the temperature of the vapor deposition source as compared with the conventional method, that is, under moderate conditions. It is possible to improve the throughput in manufacturing various substrates.

In this embodiment, four vapor deposition boats V1, V2, V3 and V4 are arranged in the vapor deposition tank.
A plurality of vapor deposition boats other than four may be arranged in the vapor deposition tank. Although the substrate 1 has a quadrangular shape, it may have another polygonal shape or a circular shape.

(Second Embodiment) Next, a thin film deposition method according to a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a schematic conceptual view showing the thin film deposition method according to the present embodiment. The present embodiment relates to a method of arranging a plurality of vapor deposition boats in a vapor deposition tank.

First, in the vapor deposition tank, as in the first embodiment, the rectangular substrate 1 and the four vapor deposition boats V1,
V2, V3 and V4 are arranged. Here, the four vapor deposition boats V1, V2, V3, V4 are arranged so that the difference between the maximum value and the minimum value in the thickness of the thin film deposited on the substrate 1 is minimized. A specific method for the arrangement will be described next.

The vapor deposition boats V1, V2, V3 and V4 are arranged on the plane 10. The plane 10 may be a virtual plane or an actual plane (for example, the bottom surface of the vapor deposition tank). Further, the vapor deposition boats V1, V2, V3, V4 are arranged one by one at each vertex of a quadrilateral shape that is virtually drawn on the plane 10. The rectangular shape of the plane 10 is smaller than the rectangular shape of the substrate 1 in the vertical and horizontal directions.

The plane 10 and the vapor deposition surface of the substrate 1 face each other in parallel. Then, the substrate 1 and the vapor deposition boats V1, V2, V3 are arranged so that a line that is orthogonal to the plane 10 and that passes through the center point of the square shape of the plane 10 also passes through the center point of the vapor deposition surface of the substrate 1. Place V4 and.

Next, the evaporation boats V1, V2, V3 and V4
The position where is placed is represented by coordinates. First, the coordinates (0,0,0) are set with the center point of the square shape of the plane 10 as the origin P1.
And The position of the vapor deposition boat V1 is coordinate (e, f, 0),
The position of the vapor deposition boat V2 is the coordinate (e, -f, 0), the position of the vapor deposition boat V3 is the coordinate (-e, f, 0), the vapor deposition boat V.
The position of 4 is a coordinate (-e, -f, 0). Then, with the center point of the vapor deposition surface of the substrate 1 as the substrate origin P2, coordinates (0,
0, d). Therefore, the origin P1 which is the central point of the quadrangular shape of the plane 10 and the substrate origin P2 are separated by the distance d. Further, an arbitrary position on the vapor deposition surface of the substrate 1 is referred to as an arbitrary point Pn and coordinates (x, y, d).

Then, the vapor deposition boats V1, V2, V3, V
4 to the arbitrary point Pn on the substrate 1 dV1, dV2
dV3 and dV4 are expressed by the following mathematical expression 1. (Equation 1) dV1 = √ {d ² + (x−e) ² + (y−f) ² } dV2 = √ {d ² + (x−e) ² + (y + f) ² } dV3 = √ {d ^{2 + (x + e) 2 +} (y-f) 2} dV4 = √ {d 2 + (x + e) 2 + (y + f) 2}

The vapor deposition rate IVn by the vapor deposition source of one vapor deposition boat Vn is set from the vapor deposition source (Vn) to the object to be vapor-deposited (arbitrary point P
Since it is inversely proportional to the square of the distance dVn to n), it is expressed by the following equation 2. (Equation 2) IVn = I ₀ / dVn ² Here, I ₀ is the vapor deposition intensity [g / cm ² ] at a position 1 cm away from each vapor deposition boat Vn. Further, it is assumed that the vapor deposition strengths of the vapor deposition boats Vn are substantially the same.

Therefore, the vapor deposition intensity Itotal at the arbitrary point Pn (x, y, d) is expressed by the following expression 3. (Equation 3) Itotal = ΣIVn = I ₀ Σ (1 / dVn ² ) = I ₀ {1 / (d ² + (xe) ² + (yf) ² ) + 1 / (d ² + (xe) ² + ( y + f) ² ) + 1 /
(d ² + (x + e) ² + (yf) ² ) + 1 / (d ² + (x + e) ² + (y + f) ² )} Here, the size of the substrate 1 is 2a in the vertical direction, If the width is 2b, x and y at an arbitrary point Pn (x, y, d) are -a <x <
a, -b <y <b.

Substrate origin P2 of substrate 1 (x = 0, y = 0)
The vapor deposition intensity Itotal (0,0) is expressed by Equation 4 below. (Equation 4) Itotal (0,0) = 4I ₀ / (d ² + e ² + f ² ) Further, the vapor deposition intensity Itotal (± a at four corners of the substrate 1 (x = ± a, y = ± b) , ± b) is expressed by the following equation 5. (Equation 5) Itotal (± a, ± b) = I ₀ {1 / (d ² + (ae) ² + (bf) ² ) + 1 / (d ² +
(ae) ² + (b + f) ² ) + 1 / (d ² + (a + e) ² + (bf) ² ) + 1 / (d ² + (a + e) ² +
(b + f) ² )}

Further, the vapor deposition intensity Ito on the vapor deposition surface of the substrate 1 immediately above each vapor deposition boat Vn (x = ± e, y = ± f).
tal (± e, ± f) is expressed by the following equation 6. (Equation 6) Itotal (± e, ± f) = I ₀ {1 / d ² + 1 / (d ² + e ² + f ² ) + 1 / (d ² + 2e ²
+ 2f ² )} Here, since Itotal (± e, ± f) ≧ Itotal (0,0), the maximum vapor deposition intensity Itotalm on the vapor deposition surface of the substrate 1
ax is expressed by the following expression 7. (Equation 7) Itotalmax = I ₀ {1 / d ² + 2 / (d ² + e ² + f ² ) + 1 / (d ² + 2e ² + 2f ² )} Also, the minimum vapor deposition on the vapor deposition surface of the substrate 1 Strength Itotalmin
Is expressed by the following equation 8. (Equation 8) Itotalmin = Itotal (0,0) or Itotalmin = I
total (± e, ± f)

From these calculation formulas, the substrate 1
And when the vapor deposition boats V1, V2, V3 and V4 are arranged,
The maximum film thickness of the thin film deposited on the substrate 1 is directly above each evaporation boat V1, V2, V3, V4, and the minimum film thickness of the thin film deposited on the substrate 1 is: It can be seen that it is the four corners or the center of the substrate 1.

Then, a value obtained by dividing the difference between the maximum value and the minimum value in the thickness of the thin film deposited on the substrate 1 by the minimum value is defined as the film thickness group value, and the target film thickness group value is set as the target. Thickness value α
Specify as [%]. Then, for the above equation, (Itotalmax-Itotalmin) / Itotal <α / 10
E and f at the coordinates of the vapor deposition boats V1, V2, V3, and V4 are set so as to be 0.

As a result, it is possible to make the film thickness of the thin film to be vapor-deposited on the substrate 1 equal to or less than the desired target film thickness value α [%]. Further, if necessary, the distance d between the substrate 1 and the plane 10 on which the vapor deposition boats V1, V2, V3 and V4 are placed is also optimized. Further, depending on the shape of the substrate 1 (circular shape, extremely elongated rectangular shape, etc.), the vapor deposition boat V1,
The positions of V2, V3 and V4 and the number of vapor deposition boats are optimized.

In the above embodiment, at the time of vapor deposition, the vapor deposition boats V1, V2, V3 and V4 are filled with vapor deposition sources made of the same material, and the vapor deposition boats V1, V2, V3 and V4 simultaneously start vapor deposition. Evaporation boats V1, V2, V3
It is preferable to finish the vapor deposition at the same time with V4 in order to make the film thickness uniform.

(Third Embodiment) Next, a thin film deposition method according to a third embodiment of the present invention will be described. In this embodiment, the rotation speed of the substrate 1 is adjusted to make the film thickness of the thin film deposited on the substrate 1 uniform.

First, the substrate 1 is rotated so that the vapor deposition position on the substrate 1 at the start of vapor deposition and the vapor deposition position on the substrate 1 at the end of vapor deposition are substantially the same position. As a result, all the portions on the vapor deposition surface of the substrate 1 pass through the vapor deposition source (vapor deposition boat Vn) the same number of times, and further, the difference in vapor deposition film thickness (group of vapor deposition film thickness) can be minimized. it can.

A value obtained by dividing the difference between the maximum value and the minimum value in the thickness of the thin film deposited on the substrate 1 by the minimum value is defined as the film thickness group value, and the target film thickness group value is set as the target. It is defined as the film thickness group value α. Then, the rotation speed is set so that the target film thickness value α is larger than the reciprocal of the rotation speed of the substrate 1. Here, when the rotation speed cannot be made larger than the reciprocal of the target film thickness value α, the film formation speed (the evaporation strength of each evaporation boat Vn), which is the thickness of the thin film formed per unit time by evaporation. Adjust. The film deposition rate can be adjusted by
It may be performed by changing the number of vapor deposition boats Vn.

Further, the rotation speed of the substrate 1 is set to N [rpm].
And the deposition rate is β [angstrom / sec]
, The desired film thickness is defined as m [angstrom], and the target film thickness value α is defined. Then, at least one of the rotation speed N and the film formation speed β is adjusted so that the target film thickness value a> {(60 * α) / (N * d)}. By setting the rotation speed N or the film formation speed β in this way, the film thickness variation value can be made equal to or less than the target film thickness variation value α.

(Organic EL Device) An organic EL device according to an application example of this embodiment will be described below with reference to FIG. FIG. 3 is a cross-sectional view showing an example of an organic EL device manufactured by using the thin film vapor deposition method of the present embodiment. In FIG. 3, the organic EL device 50 is sandwiched between a substrate (light transmitting layer) 52 that can transmit light and a pair of cathodes (electrodes) 57 and anodes (electrodes) 58 provided on one surface side of the substrate 52. Emitting layer 55 made of organic electroluminescent material
EL element (light-emitting element) including a hole transport layer 56 and
59 and a sealing substrate 320. In addition, a low refractive index layer and a sealing layer, which are laminated between the substrate 52 and the organic EL element 59, are provided as needed. The low refractive index layer is provided closer to the substrate 52 than the sealing layer.

Here, the cathode (electrode) of the organic EL device 50
57, anode (electrode) 58, light emitting layer 55 and hole transport layer 5
6 and the like are formed by using the thin film vapor deposition method of the first to third embodiments.

The organic EL device 50 shown in FIG.
The light emitted from the substrate 5 is taken out from the substrate 52 side to the outside of the device. As a material for forming the substrate 52, a transparent or translucent material capable of transmitting light, for example, transparent glass, quartz, sapphire, polyester, or poly Examples include transparent synthetic resins such as acrylate, polycarbonate, and polyetherketone. In particular, inexpensive soda glass is preferably used as the material for forming the substrate 52. On the other hand, in the case of a mode in which light is emitted from the side opposite to the substrate, the substrate may be opaque, in which case ceramics such as alumina, metal sheets such as stainless steel that have been subjected to insulation treatment such as surface oxidation, A thermosetting resin, a thermoplastic resin or the like can be used.

The anode 58 is made of indium tin oxide (IT
O: Indium Tin Oxide) is a transparent electrode that can transmit light. The hole transport layer 56 is made of, for example, a triphenylamine derivative (TPD), a pyrazoline derivative, an arylamine derivative, a stilbene derivative, a triphenyldiamine derivative, or the like. Specifically, JP-A-63-
70257, 63-175860, and Japanese Patent Application Laid-Open No. Hei 2
-135359, 2-135361, 2-20
No. 9988, No. 3-37992, No. 3-152184.
Examples thereof include triphenyldiamine derivatives, among which 4,4′-bis (N (3-methylphenyl) -N-phenylamino) is preferred.
Biphenyl is preferred.

The hole injection layer may be formed instead of the hole transport layer, or both the hole injection layer and the hole transport layer may be formed. In that case, as the material for forming the hole injection layer, for example, copper phthalocyanine (C
uPc), polytetrahydrothiophenylphenylene, polyphenylene vinylene, 1,1-bis- (4-
Examples thereof include N, N-ditolylaminophenyl) cyclohexane and tris (8-hydroxyquinolinol) aluminum, but it is particularly preferable to use copper phthalocyanine (CuPc).

As a material for forming the light emitting layer 55, a low molecular weight organic light emitting dye or a polymer light emitting material, that is, a light emitting material such as various fluorescent materials or phosphorescent materials, or an organic electroluminescent material such as Alq ₃ (aluminum chelate complex). Can be used. Among the conjugated polymers as the light emitting substance, those containing an arylene vinylene or polyfluorene structure are particularly preferable. Examples of the low molecular weight luminescent material include dyes such as naphthalene derivative, anthracene derivative, perylene derivative, polymethine type, xanthene type, coumarin type, cyanine type, metal complex of 8-hydroquinoline and its derivative, aromatic amine, tetraphenylcyclo Pentadiene derivatives and the like, or JP-A-57-51781 and 59-
Known materials described in Japanese Patent Publication No. 194393 and the like can be used. The cathode 57 is a metal electrode made of aluminum (Al), magnesium (Mg), gold (Au), silver (Ag), or the like.

An electron transport layer and an electron injection layer can be provided between the cathode 57 and the light emitting layer 55. The material for forming the electron transport layer is not particularly limited, and includes oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives,
Tetracyanoanthraquinodimethane and its derivatives,
Examples thereof include fluorenone derivatives, diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, 8-hydroxyquinoline and its derivative metal complexes.
Specifically, similar to the above-mentioned material for forming the hole transport layer, JP-A-63-70257 and JP-A-63-175860,
JP-A-2-135359, 2-135361, 2-209988, 3-37992, 3-15
Examples thereof include those described in Japanese Patent No. 2184, particularly 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris ( 8-quinolinol) aluminium is preferred.

Although not shown, the organic EL device 50 of this embodiment is an active matrix type, and in practice, a plurality of data lines and a plurality of scanning lines are arranged on the substrate 52 in a grid pattern. Then, for each pixel arranged in a matrix shape divided into data lines and scanning lines, conventionally, a driving TF such as a switching transistor or a driving transistor is used.
The organic EL element 59 is connected via T.
Then, when a drive signal is supplied through the data line or the scanning line, a current flows between the electrodes, and the light emitting layer 5 of the organic EL element 59.
5 emits light to emit light to the outer surface side of the substrate 52, and the pixel is lit.

In the organic EL device 50, the cathode (electrode) 5
7, anode (electrode) 58, light emitting layer 55 and hole transport layer 56
And the like are formed by using the thin film vapor deposition method of the above embodiment, the cathode (electrode) 57, the anode (electrode) 58, the light emitting layer 5
5 and the hole transport layer 56 and the like can be formed at high speed under mild conditions (conditions that do not cause overheating), and the throughput in manufacturing the organic EL device 50 can be improved. Further, in the organic EL device 50, since the film is formed by using the thin film vapor deposition method of the above-described embodiment, the film thickness can be made uniform, and the emission characteristics of each part of the organic EL device 50 can be improved. Uniformity can be achieved, high-quality display can be performed, and product life can be extended.

(Electronic Equipment) Examples of electronic equipment equipped with the electro-optical device (organic EL device) of the above-described embodiment will be described. FIG. 4 is a perspective view showing an example of a mobile phone. In FIG. 4, reference numeral 1000 indicates a mobile phone main body, and reference numeral 1001 indicates a display unit using the above organic EL device.

FIG. 5 is a perspective view showing an example of a wrist watch type electronic device. In FIG. 5, reference numeral 1100 indicates a watch body, and reference numeral 1101 indicates a display unit using the above electro-optical device.

FIG. 6 is a perspective view showing an example of a portable information processing device such as a word processor and a personal computer. In FIG. 6, reference numeral 1200 is an information processing apparatus, reference numeral 1202 is an input unit such as a keyboard, reference numeral 1204 is the information processing apparatus main body, and reference numeral 1206 is a display unit using the electro-optical device.

Since the electronic devices shown in FIGS. 4 to 6 are equipped with the organic EL device manufactured in the above-described embodiment, it is possible to make the light emission characteristics of each part in the display unit uniform and to reduce the film thickness. The difference in the light emission characteristics (display group) caused by the difference (film thickness group) can be made much smaller than before.
The product life can be extended.

The technical scope of the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. The materials, layer configurations, etc. are merely examples, and can be appropriately changed. For example, in the organic EL device of the above embodiment, the conductive portion may be formed by using the thin film deposition method according to the present invention and using a conjugated polymer (conductive polymer or the like).

[0067]

As is apparent from the above description, according to the present invention, a plurality of vapor deposition boats are used to deposit a thin film, so that the vapor deposition rate can be increased and the film formation can be performed rapidly under mild conditions. can do.

[Brief description of drawings]

FIG. 1 is a schematic conceptual view showing a thin film deposition method according to a first embodiment of the present invention.

FIG. 2 is a schematic conceptual diagram showing a thin film deposition method according to a second embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view of an organic EL device of this embodiment.

FIG. 4 is a diagram showing an example of an electronic apparatus including the electro-optical device according to the present embodiment.

FIG. 5 is a diagram showing an example of an electronic apparatus including the electro-optical device according to the present embodiment.

FIG. 6 is a diagram showing an example of an electronic apparatus including the electro-optical device according to the present embodiment.

[Explanation of symbols]

1 substrate 2 vapor deposition 10 plane d Distance between origin and substrate origin P1 origin P2 board origin Pn arbitrary point dV1 Distance between V1 and arbitrary point dV2 Distance between V2 and arbitrary point dV3 Distance between V3 and arbitrary point dV4 Distance between V4 and arbitrary point V1, V2, V3, V4 evaporation boat 50 Organic EL device 52 substrate 55 Light-emitting layer 56 Hole Transport Layer 57 cathode 58 Anode 59 Organic EL element (light emitting element) 320 sealing substrate

Claims (19)

[Claims] 1. A method of depositing a thin film, comprising depositing a deposit on a substrate to form a thin film, comprising: depositing the substrate and a plurality of deposition boats, each of which has a deposition source, in a deposition tank. A method for depositing a thin film, which is characterized in that it is performed. 2. The thin film deposition apparatus according to claim 1, wherein the plurality of deposition boats are arranged such that a difference between a maximum value and a minimum value in a thickness of the thin film deposited on the substrate is minimized. Vapor deposition method. 3. At the time of vapor deposition, the vapor deposition sources made of the same material are filled in the vapor deposition boats, the vapor deposition boats simultaneously start vapor deposition, and the vapor deposition boats simultaneously terminate vapor deposition. The method for depositing a thin film according to claim 1 or 2, wherein. 4. The vapor deposition strength, which is the amount of the vapor deposition material emitted from the vapor deposition source per unit time during vapor deposition, is substantially the same for each vapor deposition boat. A method for depositing a thin film according to the item 1. 5. The method for depositing a thin film according to claim 1, wherein the number of the vapor deposition boats is at least four when the substrate has a rectangular shape. 6. The plurality of vapor deposition boats are arranged on a plane, and are arranged at least at respective apexes of a rectangular shape smaller than the rectangular shape of the substrate. Item 6. A method for depositing a thin film according to item 5. 7. The vapor deposition surface of the substrate and a plane on which the plurality of vapor deposition boats are arranged face each other in parallel, and are lines orthogonal to each other, and the vapor deposition boat on the plane is at the apex. 7. The vapor deposition of a thin film according to claim 6, wherein the substrate and the plurality of vapor deposition boats are arranged such that a line passing through a central point of the arranged rectangular shape also passes through a central point of the vapor deposition surface. Method. 8. The quadrangular shape in which the vapor deposition boat is arranged at the apex has either a rectangular shape or a square shape, and the length of each side of the quadrangular shape is the shape of the substrate or during vapor deposition. In accordance with at least one of the vapor deposition intensity, which is the amount of vapor deposition of the vapor deposition source released from the vapor deposition source of each vapor deposition boat, and the distance between the substrate and the plane on which the vapor deposition boat is arranged. 7. The method according to claim 7, wherein
A method for depositing a thin film as described above. 9. The substrate is rotated so that the vapor deposition position on the substrate at the start of vapor deposition and the vapor deposition position on the substrate at the end of vapor deposition are substantially the same position. 9. The thin film deposition method according to any one of claims 8 to 8. 10. A value obtained by dividing a difference between the maximum value and the minimum value in the thickness of the thin film deposited on the substrate by the minimum value is defined as a film thickness group value, and the target film thickness group value is defined as 9. The target film thickness group value is defined, and the rotational speed is set so that the target film thickness group value is larger than the reciprocal of the rotational speed of the substrate. A method for depositing a thin film according to the item. 11. When the rotation speed cannot be made higher than the reciprocal of the target film thickness value, the film formation speed, which is the thickness of the thin film formed per unit time by the vapor deposition, can be adjusted. The method for depositing a thin film according to claim 10, which is characterized in that. 12. The substrate is set to have a rotation speed of N [rpm], a film formation rate of α [angstrom / sec], and a desired film thickness of d [angstrom]. When the difference between the maximum value and the minimum value in the thickness of the thin film is divided by the minimum value to define the film thickness group value, and the target film thickness group value is defined as the target film thickness group value a. In addition, at least one of the rotation speed N and the film formation speed α is adjusted so that the target film thickness value a> {(60 * α) / (N * d)}. Item 9. A thin film deposition method according to any one of items 1 to 8. 13. An organic electroluminescent device, which is produced by using the thin film vapor deposition method according to claim 1. Description: 14. An organic electroluminescent device, wherein at least one of an organic layer and a metal layer is formed by using the thin film vapor deposition method according to claim 1. Description: 15. The organic electroluminescent device according to claim 13, wherein the organic electroluminescent device comprises a polymer material. 16. The organic electroluminescence device according to claim 15, wherein the polymer material is a conductive polymer. Kure 17 17. A method for manufacturing an organic electroluminescence device, which comprises manufacturing the organic electroluminescence device by using the thin film deposition method according to claim 1. Description: 18. An electronic device produced by using the thin film vapor deposition method according to claim 1. Description: 19. An electronic device comprising the organic electroluminescence device according to claim 13. Description: