JP2003321417A5 - - Google Patents

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Publication number
JP2003321417A5
JP2003321417A5 JP2002163569A JP2002163569A JP2003321417A5 JP 2003321417 A5 JP2003321417 A5 JP 2003321417A5 JP 2002163569 A JP2002163569 A JP 2002163569A JP 2002163569 A JP2002163569 A JP 2002163569A JP 2003321417 A5 JP2003321417 A5 JP 2003321417A5
Authority
JP
Japan
Prior art keywords
tris
diisobutyryl methanate
lanthanoids
lanthanide
neodymium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002163569A
Other languages
English (en)
Japanese (ja)
Other versions
JP4042959B2 (ja
JP2003321417A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002163569A priority Critical patent/JP4042959B2/ja
Priority claimed from JP2002163569A external-priority patent/JP4042959B2/ja
Publication of JP2003321417A publication Critical patent/JP2003321417A/ja
Publication of JP2003321417A5 publication Critical patent/JP2003321417A5/ja
Application granted granted Critical
Publication of JP4042959B2 publication Critical patent/JP4042959B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002163569A 2002-04-26 2002-04-26 トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法 Expired - Fee Related JP4042959B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002163569A JP4042959B2 (ja) 2002-04-26 2002-04-26 トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002163569A JP4042959B2 (ja) 2002-04-26 2002-04-26 トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法

Publications (3)

Publication Number Publication Date
JP2003321417A JP2003321417A (ja) 2003-11-11
JP2003321417A5 true JP2003321417A5 (https=) 2007-07-05
JP4042959B2 JP4042959B2 (ja) 2008-02-06

Family

ID=29545708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002163569A Expired - Fee Related JP4042959B2 (ja) 2002-04-26 2002-04-26 トリス（ジイソブチリルメタナート）ネオジムおよびそれを用いた化学気相成長法によるネオジム置換チタン酸ビスマス強誘電体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JP4042959B2 (https=)

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