JP2003318494A5 - - Google Patents

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Publication number
JP2003318494A5
JP2003318494A5 JP2003108767A JP2003108767A JP2003318494A5 JP 2003318494 A5 JP2003318494 A5 JP 2003318494A5 JP 2003108767 A JP2003108767 A JP 2003108767A JP 2003108767 A JP2003108767 A JP 2003108767A JP 2003318494 A5 JP2003318494 A5 JP 2003318494A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003108767A
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Japanese (ja)
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JP2003318494A (ja
JP4524997B2 (ja
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Priority to JP2003108767A priority Critical patent/JP4524997B2/ja
Priority claimed from JP2003108767A external-priority patent/JP4524997B2/ja
Publication of JP2003318494A publication Critical patent/JP2003318494A/ja
Publication of JP2003318494A5 publication Critical patent/JP2003318494A5/ja
Application granted granted Critical
Publication of JP4524997B2 publication Critical patent/JP4524997B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003108767A 1997-11-26 2003-04-14 窒化物半導体素子 Expired - Fee Related JP4524997B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003108767A JP4524997B2 (ja) 1997-11-26 2003-04-14 窒化物半導体素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-324998 1997-11-26
JP32499897 1997-11-26
JP2003108767A JP4524997B2 (ja) 1997-11-26 2003-04-14 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13161898A Division JP3847000B2 (ja) 1997-11-26 1998-05-14 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法

Publications (3)

Publication Number Publication Date
JP2003318494A JP2003318494A (ja) 2003-11-07
JP2003318494A5 true JP2003318494A5 (enrdf_load_stackoverflow) 2005-09-15
JP4524997B2 JP4524997B2 (ja) 2010-08-18

Family

ID=29551582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003108767A Expired - Fee Related JP4524997B2 (ja) 1997-11-26 2003-04-14 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4524997B2 (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
JP3847000B2 (ja) * 1997-11-26 2006-11-15 日亜化学工業株式会社 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法

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