JP2003298142A - Magnetoresistive effect element, magnetic head and magnetic reproducing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a current perpendicular to plane-magnetoresistive effect element in which a large amount of varying resistance is allowed by implementing a fundamental review of material attribute of a pin layer, free layer and a spacer layer of a spin valve structure, and to provide a magnetic head and a magnetic reproducing device using such a magnetoresistive effect element as above. <P>SOLUTION: By combining a magnetic material having negative spin- dependent bulk scattering parameter β and the spacer layer in which negative spin-dependent interface scattering parameter γ is acquired, large rate of magnetoresistance variation is acquired while utilizing negative magnetoresistive effect, in the magnetoresistive effect element. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, a method of manufacturing the same, a magnetic head and a magnetic reproducing device, and more specifically, a sense current is passed in a direction perpendicular to a film surface of a magnetoresistive effect film. The present invention relates to a magnetoresistive effect element having a structure, a method for manufacturing the same, a magnetic head and a magnetic reproducing apparatus using the same.

[0002]

2. Description of the Related Art Conventionally, for reading information recorded on a magnetic recording medium, a reproducing magnetic head having a coil is moved relative to the recording medium, and an electromagnetic induction effect generated at that time causes the coil to move to the coil. This has been done by a method of detecting the induced voltage. After that, a magnetoresistive effect device (hereinafter, also referred to as "MR element") was developed and used as a magnetic field sensor and also as a magnetic head (MR head) mounted in a magnetic recording / reproducing apparatus such as a hard disk drive. It is being used.

In recent years, with the progress of miniaturization and large capacity of magnetic recording media, the relative speed between the reproducing magnetic head and the magnetic recording medium at the time of reading information has become smaller. Therefore, a highly sensitive MR head capable of obtaining a large output even at a small relative speed is being required.

In response to such a demand, a ferromagnetic metal film and a non-magnetic metal film such as iron (Fe) / chromium (Cr) or iron (Fe) / copper (Cu) are alternated under certain conditions. It has been reported that a so-called "artificial lattice film", which is a multilayer film in which ferromagnetic metal films adjacent to each other are antiferromagnetically coupled, has a huge magnetoresistance effect (Phys. Rev. Lett. 61 2474).
(1988), Phys. Rev. Lett. 64 2304 (1990), etc.).
However, the artificial lattice film requires a high magnetic field to saturate the magnetization, and thus is not suitable as a magnetic detection unit for an MR head.

On the other hand, it has been reported that a multi-layer film having a sandwich structure of ferromagnetic layer / non-magnetic layer / ferromagnetic layer realizes a large magnetoresistive effect even when the ferromagnetic layers are not antiferromagnetically coupled. ing. That is, an exchange bias magnetic field is applied to one of two ferromagnetic layers sandwiching a non-magnetic layer to fix the magnetization (referred to as a “magnetization pinned layer” or “pin layer”), and the other The magnetization of the ferromagnetic layer is reversed by an external magnetic field (such as a signal magnetic field) (referred to as a “magnetization free layer” or a “free layer”). In this way, a large magnetoresistive effect can be obtained by changing the relative angles of the magnetization directions of the two ferromagnetic layers arranged with the nonmagnetic layer sandwiched therebetween. This type of multilayer film is called a "spin-valve" (Phys. Re
v., B45, 806 (1992), J. Appl. Phys., 69, 4774 (198
See 1) etc.).

The spin valve is suitable for an MR head because it can saturate the magnetization with a low magnetic field strength.
Although it has already been put to practical use, the rate of change in magnetoresistance is up to about 20% at present, and an MR element showing a higher rate of change in magnetoresistance has been required.

By the way, the conventional MR element is used by passing a sense current in a direction parallel to the surface of the element film (Current-in-plane: CIP). On the other hand, when a sense current is applied in the direction perpendicular to the element film surface (Current-perpendicular-to-plane: CPP), CI
It has been reported that a magnetoresistance change rate about 10 times that of P can be obtained (J. Phys. Condens. Matter., 11, 5717 (1999).
Etc.), a magnetic resistance change rate of 100% is not impossible.

However, in the spin valve structure, the total film thickness of the spin-dependent layer is very thin and the number of interfaces is small. Therefore, the resistance itself when perpendicularly energized is small and the absolute output value is small. There was a problem that it became smaller. That is, when a spin valve having a laminated structure conventionally used for CIP is vertically energized, the absolute output value AΔR (energized area × resistance change amount) per 1 μm ² is obtained when the thickness of the pinned layer and the free layer is 5 nm. , About 0.5 mΩ
It is as small as μm ² . Therefore, in the CPP type magnetoresistive effect element, it is important to devise the film material and film structure of the spin valve film to increase the amount of resistance change.

The present invention has been made on the basis of the recognition of such a problem, and the purpose thereof is to fundamentally reconsider the material properties of the pin layer, the free layer and the spacer layer of the spin-valve structure, thereby making a large resistance change. It is an object of the present invention to provide a perpendicular conduction type magnetoresistive effect element capable of increasing the amount, a magnetic head and a magnetic reproducing apparatus using such a magnetoresistive effect element.

In order to achieve the above object, the first magnetoresistive effect element of the present invention has a magnetization including a first ferromagnetic film whose magnetization direction is substantially fixed in one direction. A pinned layer and a second magnetic field whose magnetization direction changes in response to an external magnetic field
Magnetoresistance effect film including a magnetization free layer including a ferromagnetic film, and a nonmagnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer, and a film surface of the magnetoresistance effect film. A pair of electrodes electrically connected to the magnetoresistive film for passing a sense current in a direction substantially perpendicular to the at least one of the first and second ferromagnetic films. Is scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), arsenic (As), niobium (Nb), molybdenum (Mo), technetium (T).
c), ruthenium (Ru), rhodium (Rh), tantalum (Ta), tungsten (W), rhenium (Re),
Osmium (Os), iridium (Ir) and platinum (P
t) M1 containing at least one selected from the group consisting of, iron (Fe), cobalt (Co), and nickel (Ni), and has a composition formula: (Fe _a Co _b Ni _c ) _100-d. M1 _d (however, 0
≦ a <100 atomic%, 0 ≦ b <100 atomic%, 0 ≦ c <
100 atom%, a + b + c = 100, 0.5 atom% ≦ d
<50 atomic%), and the non-magnetic intermediate layer contains at least either chromium (Cr) or ruthenium (Ru).

In the second magnetoresistive effect element of the present invention, the magnetization pinned layer including the first ferromagnetic film in which the magnetization direction is pinned substantially in one direction, and the magnetization direction corresponds to the external magnetic field. A magnetoresistive effect film including a magnetization free layer including a second ferromagnetic film that changes in accordance with the above, and a non-magnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; A pair of electrodes electrically connected to the magnetoresistive film in order to pass a sense current in a direction substantially perpendicular to the film surface of the resistance film, and the first and second ferromagnetic layers. At least one of the body films is scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), arsenic (As), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium. (Ru), rhodium (Rh), tantalum ( a), tungsten (W), rhenium (Re), osmium (Os), iridium (I
r) and at least one element M1 selected from the group consisting of platinum (Pt), iron (Fe), and cobalt (C).
o) and nickel (Ni), the composition formula: (Fe _a Co _b Ni _c ) _100-d M1 _d (however, 0
≦ a <100 atomic%, 0 ≦ b <100 atomic%, 0 ≦ c <
100 atom%, a + b + c = 100, 0.5 atom% ≦ d
<50 atomic%), the non-magnetic intermediate layer is a layer containing at least either chromium (Cr) or ruthenium (Ru), copper (Cu), silver (Ag), Gold (Au)
And a layer containing at least one selected from the group consisting of aluminum and aluminum (Al) as a main component.

In the third magnetoresistive effect element of the present invention, the magnetization pinned layer including the first ferromagnetic film in which the magnetization direction is pinned substantially in one direction, and the magnetization direction corresponds to the external magnetic field. A magnetoresistive effect film including a magnetization free layer including a second ferromagnetic film that changes in accordance with the above, and a non-magnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; A pair of electrodes electrically connected to the magnetoresistive film for passing a sense current in a direction substantially perpendicular to the film surface of the resistance film, and the nonmagnetic intermediate layer is made of copper ( C
u), silver (Ag), gold (Au), chromium (Cr), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), technetium ( Tc), rhenium (Re),
Molybdenum (Mo), tungsten (W), niobium (N
b), tantalum (Ta), zirconium (Zr), and at least one element M2 selected from the group consisting of hafnium (Hf), iron (Fe), and cobalt (C).
o), nickel (Ni) and at least one element M3 selected from the group consisting of manganese (Mn).

Here, by adding a magnetic element used for the pinned layer or the free layer to the intermediate layer, the band structure of the intermediate layer is brought closer to the band structure of the pinned layer or the free layer, and unnecessary electron scattering is suppressed. be able to. That is, by making the density of states of the intermediate layer close to the density of states of the magnetic layer, it is possible to suppress unnecessary scattering of up-spin electrons.

Here, the composition _e of the alloy represented by the composition formula M2 _100-e M3 _e may be within the range of 0 <e ≦ 30 atomic%.

In the fourth magnetoresistive element of the present invention, the magnetization pinned layer including the first ferromagnetic film in which the magnetization direction is pinned substantially in one direction, and the magnetization direction corresponds to the external magnetic field. A magnetoresistive effect film including a magnetization free layer including a second ferromagnetic film that changes in accordance with the above, and a non-magnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; A pair of electrodes electrically connected to the magnetoresistive film for passing a sense current in a direction substantially perpendicular to the film surface of the resistance film, and the nonmagnetic intermediate layer is made of copper ( C
u), silver (Ag), gold (Au), chromium (Cr), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), technetium ( Tc), rhenium (Re),
Molybdenum (Mo), tungsten (W), niobium (N
b), tantalum (Ta), zirconium (Zr) and hafnium (Hf) in the first layer of at least one selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni). ) And manganese (Mn), at least one selected from the group consisting of a second layer is inserted.

Also in this case, by inserting a layer made of a magnetic element used for the pinned layer or the free layer in the intermediate layer, the band structure of the intermediate layer is brought close to the band structure of the pinned layer or the free layer, and unnecessary electron scattering is caused. Can be suppressed. That is, by making the density of states of the intermediate layer close to the density of states of the magnetic layer, it is possible to suppress unnecessary scattering of up-spin electrons.

Here, the layer thickness of the second layer is 0.03.
It can be not less than nanometer and not more than 0.5 nanometer.

At least one of the first and second ferromagnetic films is scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), arsenic (As), niobium ( Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (R
h), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir)
And at least one element M1 selected from the group consisting of platinum (Pt), iron (Fe), and cobalt (Co)
And nickel (Ni), the composition formula: (Fe _a Co _b Ni _c ) _100-d M1 _d (however, 0
≦ a <100 atomic%, 0 ≦ b <100 atomic%, 0 ≦ c <
100 atom%, a + b + c = 100, 0.5 atom% ≦ d
<50 atomic%).

On the other hand, the magnetic head of the present invention is characterized by including any one of the magnetoresistive effect elements described above.

Further, the magnetic reproducing apparatus of the present invention is characterized in that it is provided with this magnetic head to enable reading of information magnetically recorded on a magnetic recording medium.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic view showing the cross-sectional structure of the essential part of the magnetoresistive effect element of the present invention.

That is, the magnetoresistive element of the present invention is
Pin layer (magnetization pinned layer) P and free layer (magnetization free layer) F
And a spacer layer (nonmagnetic intermediate layer) provided between them. Here, the pinned layer P is a layer including a ferromagnetic film whose magnetization is substantially fixed in one direction. The free layer F is a layer including a ferromagnetic film whose magnetization can change according to an external magnetic field. In addition, the spacer layer S
Is a layer that blocks magnetic coupling between the pinned layer P and the free layer F.

In the present invention, a material having a negative spin-dependent bulk scattering parameter β is used in at least one of the pinned layer P and the free layer F, and the spin-dependent interface scattering parameter γ is negative in the spacer layer S. A material that becomes

That is, the amount of change in magnetoresistance of the magnetoresistance effect element is determined by the spin-dependent bulk scattering parameter β in the ferromagnetic film and the spin-dependence at the interface between the ferromagnetic layer and the nonmagnetic layer. The interface scattering parameter γ. In the specification of the present application, the “spin-dependent bulk scattering parameter β” represents the ratio of the resistances of up-spin electrons and down-spin electrons flowing in a ferromagnet, and the electrical resistance ρ in the bulk by the up-spin electrons. It is expressed by the following equation using ↑ [μΩ · cm] and electric resistance ρ ↓ [μΩ · cm] due to down-spin electrons. ρ ↓ / ρ ↑ = (1 + β) / (1-β) When this equation is expressed with respect to β, it is as follows. β = (ρ ↓ −ρ ↑) / (ρ ↓ + ρ ↑) On the other hand, in the present specification, the “spin-dependent interface scattering parameter γ” means the interface between the pinned layer P and the spacer layer S, or the free layer F. Using the resistance AR ↑ [mΩ · μm ² ] per unit area of up-spin electrons and up-spin electrons and the resistance AR ↓ [mΩ · μm ² ] per unit area of down-spin electrons at the interface with the spacer layer S. It is expressed by the following equation. AR ↓ / AR ↑ = (1 + γ) / (1-γ) When this equation is expressed in terms of γ, it is as follows. γ = (AR ↓ −AR ↑) / (AR ↓ + AR ↑) As can be seen from these equations, the larger the absolute value of β or γ, the larger the magnetoresistance change amount of the magnetoresistance effect element.

By the way, in the case of the conventional spin valve structure, the spin-dependent bulk scattering parameter β is in the case of iron (Fe), cobalt (Co), nickel (Ni), etc., which are usually used as the ferromagnetic material. Is positive.

On the other hand, for example, when chromium (Cr) or the like is added to iron (Fe), β decreases and finally becomes negative. That is, the resistance due to the down spin electrons is smaller than the resistance due to the up spin electrons. Regarding this phenomenon, for example, J. Duran
d and F. Gautier: J. Phys. Chem. Solids., 31, 277
3 (1970), JWF Dorleijn and AR Miedema:
J. Phys. F: Met. Phys., 5, 487 (1975), A. Fert a
nd IA Campbell: J. Phys. F: Met. Phys., 6, 84
9 (1976), I. Mertig: Rep. Prog. Phys. 62, 237 (19
99) and other documents, iron (Fe), cobalt (C
It has been reported that the resistance of up-spin electrons can be increased by adding a specific element to o) and nickel (Ni). As described above, when the resistance of the down spin electrons is smaller than the resistance of the up spin electrons, the so-called "negative magnetoresistive effect (negative magnetoresistive effect)
sistance effect) "occurs. Even in this case, if the absolute value of the bulk scattering parameter β is large, a large magnetoresistance change rate can be obtained.

The first feature of the present invention is that
As the ferromagnetic material of the pinned layer P or the free layer F, such a ferromagnetic material in which β is negative is used. As the material, specifically, iron (Fe), cobalt (C
o) and nickel (Ni), or a ferromagnetic alloy containing either of these, as scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), and Arsenic (As), niobium (Nb), molybdenum (Mo), technetium (T
c), ruthenium (Ru), rhodium (Rh), tantalum (Ta), tungsten (W), rhenium (Re),
Osmium (Os), iridium (Ir) and platinum (P
A ferromagnetic material to which at least one of t) is added can be given.

However, if the interface in which the spin-dependent interface scattering parameter γ is positive is combined with the ferromagnetic layer in which β is negative in this way, the mutual effects on AΔR are offset. become. Hereinafter, the reason for this will be described with reference to FIG.

FIG. 2 is a conceptual diagram for explaining the effect of the combination of β and γ on electrons.

First, in the specific example shown in FIG. 9A, the bulk scattering parameter β and the interface scattering parameter γ are both positive. At this time, the up-spin electrons (e ↑) have a small resistance ρ in the pinned layer P and the free layer F, and also have small scattering at the interface between these and the spacer layer S. That is, the up-spin electrons have low resistance in the bulk (ferromagnetic material) and are less likely to be scattered even at the interface. As a result, the amount of change in magnetic resistance Δ
R becomes large, and the absolute output value AΔR becomes large.

On the other hand, the down-spin electron (e
↓) has large bulk resistance and large scattering at the interface. That is, it is not easy to pass through the spin valve structure.

On the other hand, in the case of the specific example shown in FIG. 2B, the bulk scattering parameter β is negative and the interface scattering parameter γ is positive. In this case, looking at the resistance ρ in the bulk (ferromagnet), the resistance ρ of the up-spin electrons (e ↑) is the down-spin electron (e ↑).
↓) is higher than the resistance ρ. Therefore, a higher magnetoresistance change rate should be obtained by using down-spin electrons. However, since the interface scattering parameter γ is positive, down-spin electrons have a high probability of being scattered at the interface. When the electrons are scattered, the spin information is lost, so that the conduction as down-spin electrons is lost.

That is, as shown in FIG. 2B, even if the bulk scattering parameter β is negative, the down-spin electrons are scattered at the interface if the interface scattering parameter γ is positive. The contribution to the magnetoresistance change rate is canceled out.

On the other hand, according to the present invention, FIG.
As shown in (c), the spin valve structure is formed such that the bulk scattering parameter β and the interface scattering parameter γ are both negative.

According to this structure, the down-spin electrons conducted in the bulk (ferromagnetic material) with low resistance contribute to the magnetoresistance change in a state where spin information loss due to scattering is small even at the interface. As a result, a high magnetoresistance change rate can be obtained in the "negative magnetoresistance effect" using down-spin electrons.

In the present invention, the interface scattering parameter γ
Therefore, as the material of the spacer layer (non-magnetic intermediate) S, either chromium (Cr) or ruthenium (Ru) or an alloy thereof can be used.

Alternatively, the spacer layer S is made of chromium (Cr).
And a layer made of ruthenium (Ru) or an alloy thereof, and a layer made of any one of copper (Cu), silver (Ag), gold (Au) and aluminum (Al) or an alloy containing these. It may be a laminated body.

Alternatively, as the material of the spacer layer S, copper (Cu), silver (Ag), gold (Au), chromium (Cr),
Palladium (Pd), platinum (Pt), rhodium (R
h), iridium (Ir), ruthenium (Ru), osmium (Os), technetium (Tc), rhenium (R
e), molybdenum (Mo), tungsten (W), niobium (Nb), tantalum (Ta), zirconium (Zr)
And an alloy of at least one of hafnium (Hf) and at least one of iron (Fe), cobalt (Co), nickel (Ni), and manganese (Mn) can be used.

Alternatively, as the spacer layer S, copper (C
u), silver (Ag), gold (Au), chromium (Cr), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), technetium ( Tc), rhenium (Re),
Molybdenum (Mo), tungsten (W), niobium (N
b), tantalum (Ta), zirconium (Zr) and / or hafnium (Hf) in a layer containing at least one of iron (Fe), cobalt (Co) and nickel (Ni).
And a structure in which a thin film layer having a thickness of 0.03 nanometers to 0.5 nanometers containing at least one of manganese and manganese (Mn) as a main component is inserted.

As described above, in the present invention, by combining the magnetic material having negative β and the spacer layer capable of obtaining negative γ, a large magnetic resistance can be obtained while utilizing the negative magnetoresistive effect. Since the rate of change becomes possible, the practical application as a vertical conduction type spin valve element is significant.

The embodiments of the present invention will be described in more detail below with reference to examples.

First, the first to first aspects of the present invention described in detail later
The entire structure of the magnetoresistive effect element which was specifically manufactured in Example 0 will be described. That is, in these examples, two types of elements described below were actually manufactured and their characteristics were evaluated.

FIG. 3 is a schematic diagram showing a cross-sectional structure of a main part of the first magnetoresistive effect element.

That is, the magnetoresistive film 14 is formed on the lower electrode 12, and hard films 16 and 16 for applying a bias magnetic field for controlling the magnetic domains of the free layer are formed on both ends of the magnetoresistive film 14.
Further, the upper electrode 20 was connected to the magnetoresistive film 14 via the contact of the passivation film 18.

The manufacturing process of this element is as follows.

First, a silicon (Si) substrate (not shown)
A film of about 500 nm (nanometer) AlOx is formed on top of this, and a resist is applied on it to form a PEP (Photo Engrav
ing process) to remove the resist in the portion to be the lower electrode 12.

Next, AlOx in a portion without a resist is removed by RIE (Reactive Ion Etching) to obtain a film thickness of 5 n.
m tantalum (Ta) / 400 nm thick copper (Cu) /
A lower electrode 12 is formed by forming a stacked film of tantalum (Ta) having a film thickness of 20 nm.

Next, CMP (Chemical Mechanical Polis)
The lower electrode 12 is exposed from AlOx by performing hing) and smoothing. About 3μ on the lower electrode 12
The magnetoresistive effect film 14 having a size of m × 3 μm to 5 μm × 5 μm is formed. Then, a hard film 16 of cobalt platinum (CoPt) having a thickness of about 30 nm is formed on the side surface of the magnetoresistive film 14.

Thereafter, a SiOx film having a thickness of about 200 nm is formed as a passivation film on the entire surface. After applying the resist, the resist is removed from the contact hole formation region in the central portion of the magnetoresistive effect film 14. And RIE
And milling to form a contact hole of about 0.3 μmφ to 3 μmφ. After removing the resist, the film thickness is 5
nm tantalum (Ta) / 400 nm thick copper (Cu)
/ Upper electrode 20 made of tantalum (Ta) having a film thickness of 5 nm
And a gold (Au) electrode pad (not shown) of about 200 nm is formed.

The first magnetoresistive effect element was manufactured by the above process.

FIG. 4 is a schematic view showing the cross-sectional structure of the main part of the second magnetoresistive effect element according to the embodiment of the present invention. In this figure, elements similar to those in FIG. 3 are assigned the same reference numerals and detailed explanations thereof are omitted.

The main part of the manufacturing process of the second magnetoresistive effect element is as described below.

That is, as in the case of the first magnetoresistive effect element shown in FIG. 1, A is formed on the silicon (Si) substrate.
The lower electrode 12 is formed by forming a film of lOx and removing a part of AlOx.
After forming a film, by performing CMP and smoothing,
The lower electrode 12 is exposed from AlOx. Then, a magnetoresistive film 14 is formed on the lower electrode 12 and has a width of about 2 μm.
It is processed into a stripe shape of m to 5 μm. After that, as a passivation film 18 on the entire surface, Si of about 200 nm is formed.
A film of Ox is formed. After applying the resist, the element size is defined on the magnetoresistive effect film 14 by removing the resist in the range of about 1.5 μm to 5 μm orthogonal to the longitudinal direction of the magnetoresistive effect film 14. After removing the resist,
A gold (Au) film having a thickness of about 100 nm is formed immediately above the magnetoresistive film 14 so that the sense current flows uniformly throughout the magnetoresistive film 14. After that, the upper electrode 20 and the pad are formed similarly to the element of FIG.

As a result of measuring the electric resistance characteristics of these elements using the 4-terminal method, it was confirmed that there was no difference in the output between the two elements.

(First Embodiment) First, a first embodiment of the present invention will be described.

FIG. 5 is a conceptual diagram showing the laminated structure of the magnetoresistive effect element of this example and each comparative example. The basic film structure is as follows. Lower electrode 12 / base layer BF
(5 nm Ta) / base layer BF (5 nm NiFeCr) /
Antiferromagnetic layer AF (15 nm PtMn) / magnetization pinned layer P
(4 nm) / nonmagnetic intermediate layer S (3 nm) / magnetization free layer F
(4 nm) / spin filter layer SF (1 nm) / protective layer CA (10 nm Ta) / upper electrode 20 Here, the film thickness and the material are appropriately represented in the parentheses of each layer. That is, in the present example and the comparative example, the magnetization pinned layer P and the magnetization free layer F
The thickness of each of the nonmagnetic intermediate layers S was 3 nm, and the thickness of the spin filter layer SF was 1 nm.

FIG. 6 is a list showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of this example and comparative example. Note that AΔR is the magnetization fixed layer P and the magnetization free layer F.
Is the difference between the resistance AR ^AP when the magnetization is antiparallel and the resistance AR ^P when the magnetization is parallel, that is, AR ^AP -AR ^P.

From FIG. 6, iron (Fe) having a positive bulk scattering parameter β is added to scandium (Sc) and titanium (T).
i), vanadium (V), chromium (Cr), manganese (Mn) and the like to make β negative, the non-magnetic intermediate layer S and the spin filter layer SF are made of copper (Cu) (Sample 1-
3, 5, 7, 9, and 11), it is more preferable that the interface scattering parameter γ is made negative by changing to chromium (Cr) (Samples 1-4, 6, 8, 10, and 12). It can be seen that a large output absolute value | AΔR | can be obtained.

Even when the non-magnetic intermediate layer S and the spin filter layer SF are made of ruthenium (Ru), chromium (C
Similar to r), it was possible to obtain | AΔR | larger than that of copper (Cu). Moreover, here, Sc, Ti, V, Cr,
Although the addition amount of Mn was set to 5 at% (atomic percent),
The effect of combining with Cr was confirmed in the range of 0.5 at% to 50 at%. However, the range of the addition amount was desirably 0.5 at% to 30 at%.

Further, as the additive element to the magnetization fixed layer P and the magnetization free layer F, arsenic (As), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh) and tantalum are used. (Ta), tungsten (W), rhenium (Re), osmium (O
s), iridium (Ir), or platinum (Pt), the nonmagnetic intermediate layer S and the spin filter layer SF
From copper (Cu) to chromium (Cr) and ruthenium (R
In the case of u), a large | AΔR | could be obtained.

(Second Embodiment) Next, a second embodiment of the present invention will be described.

Also in this example, the magnetoresistive effect film having the laminated structure shown in FIG. 5 was prepared. The basic laminated structure is as follows. Lower electrode 12 / base layer B
F (5 nm Ta) / base layer BF (5 nm NiFeCr)
/ Anti-ferromagnetic layer AF (15 nm PtMn) / Magnetic pinned layer P
(4 nm) / nonmagnetic intermediate layer S (3 nm) / magnetization free layer F
(4 nm) / spin filter layer SF (1 nm) / protective layer CA (10 nm Ta) / upper electrode 20 Here again, the film thickness and the material are appropriately represented in the parentheses of each layer. That is, in this example, the thickness of the magnetization fixed layer P and the magnetization free layer F were each set to 4 nm, the nonmagnetic intermediate layer S was set to 3 nm, and the spin filter layer SF was set to 1 nm.

FIG. 7 is a table showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each of the samples of this example and the comparative example.

From FIG. 7, chromium (Cr), niobium (Nb), cobalt (Co), whose bulk scattering parameter β is positive,
When β is made negative by adding ruthenium (Ru) or the like, the nonmagnetic intermediate layer S and the spin filter layer SF are made of copper (C).
u) (Samples 2-4, 7 and 10) to chromium (Cr),
It can be seen that a larger output absolute value | AΔR | can be obtained by changing the ruthenium (Ru) and making the interface scattering parameter γ negative (Samples 2-5, 6, 8, 9, 11, and 12). .

The elements added to the magnetization pinned layer P and the magnetization free layer F are vanadium (V) and manganese (M
n), molybdenum (Mo), technetium (Tc), rhodium (Rh), tungsten (W), rhenium (R
e), osmium (Os) or iridium (Ir)
In such a case as well, | AΔR | was larger when the nonmagnetic intermediate layer and the spin filter layer were made of chromium (Cr) or ruthenium (Ru) than when they were made of copper (Cu).

Although the amount of addition of the above elements to the magnetization fixed layer P and the magnetization free layer F is set to 5 at% here, the effect of combining with Cr is within the range of 0.5 at% to 50 at%. It could be confirmed. However, the effect is desirably large at 0.5 at% to 30 at%.

(Third Embodiment) Next, a third embodiment of the present invention will be described.

Also in this example, the magnetoresistive effect film having the laminated structure shown in FIG. 5 was prepared. The basic laminated structure is as follows. Lower electrode 12 / base layer B
F (5 nm Ta) / base layer BF (5 nm NiFeCr)
/ Anti-ferromagnetic layer AF (15 nm PtMn) / Magnetic pinned layer P
(4 nm) / nonmagnetic intermediate layer S (3 nm) / magnetization free layer F
(4 nm) / spin filter layer SF (1 nm) / protective layer CA (10 nm Ta) / upper electrode 20 Here again, the film thickness and the material are appropriately represented in the parentheses of each layer. That is, in this example, the thickness of the magnetization fixed layer P and the magnetization free layer F were each set to 4 nm, the nonmagnetic intermediate layer S was set to 3 nm, and the spin filter layer SF was set to 1 nm.

FIG. 8 is a list showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of this example and comparative example.

From FIG. 8, vanadium (V) and chromium (C) are added to nickel (Ni) having a positive bulk scattering parameter β.
r), ruthenium (Ru), rhodium (Rh), iridium (Ir) and the like to make β negative, the non-magnetic intermediate layer S and the spin filter layer SF are made of copper (Cu) (Sample 3- 3, 5, 7, 9 and 11) was changed to chromium (Cr), and the interface scattering parameter γ was also made negative (Samples 2-4,
6, 8, 10 and 12) have larger output absolute values |
It is understood that AΔR | can be obtained.

The elements added to the magnetization pinned layer P and the magnetization free layer F are scandium (Sc), titanium (T
i), arsenic (As), niobium (Nb), molybdenum (M
o), technetium (Tc), tantalum (Ta), tungsten (W), rhenium (Re), osmium (O)
s) or platinum (Pt), the nonmagnetic intermediate layer and the spin filter layer may be made of chromium (Cr) or ruthenium (Ru) as compared with copper (Cu).
ΔR | was large.

Although the amount of the above elements added to the magnetization fixed layer P and the magnetization free layer F is set to 5 at% here, the effect of combining with Cr in the range of 0.5 at% to 50 at% is effective. It could be confirmed. However, the effect is desirably large at 0.5 at% to 30 at%.

(Fourth Embodiment) In the first to third embodiments, the materials of the magnetization pinned layer P and the magnetization free layer F are iron (Fe), cobalt (Co), nickel (N).
The element was added using i) as a base. On the other hand, the fourth
In the embodiment of the above, iron-cobalt-nickel (Fe-
The case where the element was added to the Co—Ni) alloy and the case where the materials of the magnetization fixed layer P and the magnetization free layer F were different were examined.

Also in this example, a magnetoresistive effect element having a laminated structure similar to that shown in FIG. 3 was manufactured.

The basic film structure is as follows. Lower electrode 12 / base layer BF (5 nm Ta) / base layer BF
(5 nm NiFeCr) / antiferromagnetic layer AF (15 nmP
tMn) / magnetization pinned layer P (4 nm) / nonmagnetic intermediate layer S
(3 nm) / Magnetization free layer F (4 nm) / Spin filter layer SF (1 nm) / Protective layer CA (10 nm Ta) / Upper electrode 20 FIG. 9 shows the material of each layer in each sample of this example and comparative example. 3 is a table showing the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area.

From FIG. 9, even when the materials of the magnetization pinned layer P and the magnetization free layer F are different, the effect of using ruthenium (Ru) or chromium (Cr) for the nonmagnetic intermediate layer S can be seen.

(Fifth Embodiment) Next, as a fifth embodiment of the present invention, the samples 4-2 and 4- of the fourth embodiment described above are used.
In 6 and 4-8, magnetoresistive effect elements in which the materials of the non-magnetic intermediate layer S and the spin filter layer SF were changed were manufactured.

FIG. 10 is a list showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of this example.

It can be seen from FIG. 10 that the effect of increasing the magnetic resistance change can be obtained even if the materials of the non-magnetic intermediate layer S and the spin filter layer SF are not the same.
Further, it is effective to use a material in which the absolute value of γ becomes particularly large at the interface with the material of the magnetization free layer F.

As described above, the constitution in which the materials of the non-magnetic intermediate layer S and the spin filter layer SF are different can be applied to other embodiments.

(Sixth Embodiment) Next, as a sixth embodiment of the present invention, the samples 4-7 to 4- of the above-mentioned fourth embodiment will be described.
9, the non-magnetic intermediate layer S was a laminated body as shown in FIG.

That is, the basic laminated structure is as follows.
Is like. Lower electrode 12 / base layer BF (5 nm Ta) / base layer BF
(5 nm NiFeCr) / antiferromagnetic layer AF (15 nmP
tMn) / magnetization pinned layer P (4 nmCo₉₀Fe ₁₀) /
Non-magnetic intermediate layer S (3 nm) / magnetization free layer F (4 nm Ni
₆₆Fe₁₈Co₁₆) / Spin filter layer SF (1n
m) / protective layer CA (10 nm Ta) / upper electrode 20 FIG. 12 shows each of these layers in each sample of this example.
And the amount of change in magnetic resistance A per unit area obtained
ΔR [mΩμm^Two] Is a list showing ".

If the thickness of the non-magnetic intermediate layer S is increased in order to block the magnetic coupling between the magnetization pinned layer P and the magnetization free layer F, electrons having a spin with a longer spin diffusion length may be scattered. Therefore, as in Sample 6-1, a layer of copper (Cu) having a very long spin diffusion length is used as the nonmagnetic intermediate layer S.
By providing it in the middle of, the scattering was suppressed. Even if the intermediate copper (Cu) is slightly thickened as in Sample 6-2,
AΔR did not change.

Further, as the material of the layer inserted in the non-magnetic intermediate layer S, gold (Au), silver (A) is used instead of copper (Cu).
Similar effects were obtained when g) or aluminum (Al) was used.

When the materials of the magnetization pinned layer P and the magnetization free layer F are different, the nonmagnetic intermediate layer S is constructed so that the absolute value of the interface scattering parameter γ becomes large for each material. You should make a decision. That is, sample 6-4
Is a sample 6-1 in which ruthenium (Ru) is provided on the magnetization pinned layer P side, and chromium (Cr) is provided on the magnetization free layer F side so that both are aligned with ruthenium (Ru) or chromium (Cr). Larger than 6-3 | AΔR |
I was able to get

The structure in which the non-magnetic intermediate layer S is a laminated body can be similarly applied to the other embodiments to obtain the same effect.

(Seventh Embodiment) Next, as a seventh embodiment of the present invention, a magnetoresistive effect element in which the magnetization fixed layer P has a so-called "synthetic structure" will be described.

FIG. 13 is a schematic view showing the laminated structure of the magnetoresistive effect element of this embodiment. Also in this figure, elements similar to those described above with reference to FIGS. 1 to 12 are marked with the same reference numerals and not described in detail.

The element of this embodiment has a "synthetic structure" in which the first magnetization pinned layer P1, the antiparallel coupling layer AC and the second magnetization pinned layer P2 are laminated as the magnetization pinned layer. In the synthetic structure, generally, a ruthenium (Ru) layer having a large coupling magnetic field is used for antiparallel coupling of the magnetizations of the two magnetization pinned layers P1 and P2. From this,
When the spin-dependent scattering parameters (β, γ) are negative, it is equivalent to providing an interface for spin-dependent scattering also inside the magnetization pinned layer P, and has the single-layer magnetization pinned layer P illustrated in FIG. It is possible to further increase the absolute value of the amount of change in magnetoresistance as compared with the structure.

In this example, the magnetoresistive effect elements shown in FIGS. 5 and 13 were prepared, and the magnetoresistive change amounts were compared.

The basic laminated structure is as follows. Structure of FIG. 5: Lower electrode 12 / underlayer BF (5 nm Ta) / underlayer BF
(5 nm NiFeCr) / antiferromagnetic layer AF (15 nmP
tMn) / magnetization pinned layer P (4 nm) / nonmagnetic intermediate layer S
(3 nm) / Magnetization free layer F (4 nm) / Spin filter layer SF (1 nm) / Protective layer CA (10 nmTa) / Upper electrode 20 Structure of FIG. 13: Lower electrode 12 / Underlayer BF (5 nmTa) / Underlayer BF
(5 nm NiFeCr) / antiferromagnetic layer AF (15 nmP
tMn) / magnetization pinned layer P1 (4 nm) / antiparallel coupling layer A
C (1 nmRu) / magnetization pinned layer P2 (4 nm) / nonmagnetic intermediate layer S (3 nm) / magnetization free layer F (4 nm) / spin filter layer SF (1 nm) / protective layer CA (10 nmT)
a) / Upper electrode 20 That is, the magnetization pinned layers P1 and P2 and the magnetization free layer F have a thickness of 4 nm, the nonmagnetic intermediate layer S has a thickness of 3 nm, and the spin filter layer SF has a thickness of 1 nm.

FIG. 14 is a list showing the materials of these layers and the obtained magnetoresistive change amount AΔR [mΩμm ² ] per unit area in each sample of this example and comparative example. The material of the magnetization pinned layer P1 is always Co.
₉₀ Fe ₁₀ .

Regardless of which material was used, there was a tendency that AΔR was reduced by changing the film structure of FIG. 5 from the film structure of FIG. Comparing the samples 7-7 and 7-8 in which the spin-dependent bulk scattering parameter β in the magnetization pinned layer P2 and the spin-dependent parameter γ at the interface are both negative, the structure of FIG. It can be seen that | AΔR | is increased by adopting the structure of.

The increase / decrease in the amount of change in magnetoresistance due to the synthetic structure is similarly applied to the other embodiments, and the same effect can be obtained.

(Eighth Embodiment) The effect described above is as shown in FIG.
As illustrated in FIG. 5, the magnetization pinned layer P can be similarly obtained even if it is a top type.

FIG. 15 is a schematic view showing the laminated structure of the magnetoresistive effect element of this embodiment. Also in this figure, elements similar to those described above with reference to FIGS. 1 to 12 are marked with the same reference numerals and not described in detail.

In the case of this structure, a large magnetoresistance change amount can be obtained by appropriately selecting the adjacent underlayer AB located below the magnetization free layer F. The basic laminated structure was as follows, the material of the adjacent underlayer AB was changed, and AΔR of the device was measured. Lower electrode 12 / base layer BF (5 nm Ta) / base layer BF
(5 nm NiFeCr) / adjacent underlayer AB (2 nm) /
Magnetization free layer F (4 nm) / non-magnetic intermediate layer S (3 nm) /
Magnetization pinned layer P (4 nm) / antiferromagnetic layer AF (15 nmP
tMn) / protective layer CA (10 nm Ta) / upper electrode 20 FIG. 16 is a graph for each sample of this example and comparative example.
It is a list showing the material of each of these layers, and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area.

It can be seen from FIG. 16 that the same results as the results of the samples 5-1 to 5-1 described above regarding the fifth embodiment are obtained. That is, it was confirmed that the same effect can be obtained by applying the present invention similarly even in the case of a so-called top type element structure.

(Ninth Example) Next, as a ninth example of the present invention, a magnetoresistive effect element in which a non-magnetic intermediate layer S was alloyed was manufactured.

In this example, a magnetoresistive film having the following basic film structure was prepared. Lower electrode 12 / base layer BF (5 nm Ta) / base layer BF
(5 nm NiFeCr) / antiferromagnetic layer AF (15 nmP
tMn) / magnetization pinned layer P (4 nm (Co ₉₀ Fe ₁₀ ).
₉₅ Cr ₅ ) / non-magnetic intermediate layer S (3 nm) / magnetization free layer F (4 nm (Ni ₆₆ Fe ₁₈ Co ₁₆ ) ₉₀ V ₁₀ ).
/ Spin filter layer SF (1 nm) / protective layer CA (10
nmTa) / upper electrode 20 FIG. 17 shows each of the samples of this example and the comparative example.
It is a list showing the material of each of these layers, and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area.

As can be seen from FIG. 17, pure copper (C
When a material containing a smaller amount of cobalt (Co) than u) is used for the non-magnetic intermediate layer S and the spin filter layer SF, the amount of change in magnetoresistance increases.

This tendency shows that copper (Cu), silver (Ag), gold (Au), chromium (Cr), palladium (Pd), platinum (Pt) are used as materials for the non-magnetic intermediate layer S and spin filter layer SF. , Rhodium (Rh), Iridium (Ir), Ruthenium (Ru), Osmium (Os), Technetium (Tc), Rhenium (Re), Molybdenum (Mo), Tungsten (W), Niobium (Nb), Tantalum (T).
a), at least one of zirconium (Zr) and hafnium (Hf), and iron (Fe), cobalt (C)
The same can be obtained when an alloy of o), nickel (Ni), and / or manganese (Mn) is used.

In this case, the concentration of the additional element is 30
If it becomes at% or more, the spin will be diffused, so 3
It is preferably 0 at% or less, more preferably 5 at% or less.

(Tenth Embodiment) Next, the tenth embodiment of the present invention will be described.
As an example, a magnetoresistive effect element having a laminated structure of the non-magnetic intermediate layer S was manufactured.

In this example, a magnetoresistive film having the following basic film structure was prepared. Lower electrode 12 / base layer BF (5 nm Ta) / base layer BF
(5 nm NiFeCr) / antiferromagnetic layer AF (15 nmP
tMn) / magnetization pinned layer P (4 nm (Co ₉₀ Fe ₁₀ ).
₉₅ Cr ₅ ) / non-magnetic intermediate layer S (3 nm) / magnetization free layer F (4 nm (Ni ₆₆ Fe ₁₈ Co ₁₆ ) ₉₀ V ₁₀ ).
/ Spin filter layer SF (1 nm) / protective layer CA (10
nmTa) / upper electrode 20 FIG. 18 is a graph for each sample of this example and comparative example.
It is a list showing the material of each of these layers, and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area.

As shown in FIG. 18, when a laminated structure in which a cobalt (Co) layer which is much thinner than a copper (Cu) single layer is inserted is used for the non-magnetic intermediate layer S and the spin filter layer SF, the magnetoresistance change amount is increased. Was found to increase.

The effect is that the non-magnetic intermediate layer S and the spin filter layer SF are made of copper (Cu), silver (Ag), gold (Au),
Chromium (Cr), palladium (Pd), platinum (Pt),
Rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), technetium (T
c), rhenium (Re), molybdenum (Mo), tungsten (W), niobium (Nb), tantalum (Ta), zirconium (Zr), and hafnium (Hf). ), Cobalt (C
o), nickel (Ni), and manganese (Mn) are also obtained in the case of a structure in which a thin film layer containing at least one of the main components is inserted.

The thickness of the thin film layer to be inserted is preferably 0.5 nm or less so that spins are not diffused.
nm or less is desirable. In addition, 0.03 nm is necessary to develop the effect of insertion.

(Eleventh Embodiment) Next, the eleventh embodiment of the present invention will be described.
As an example of the above, a specific example of a CPP type magnetoresistive effect element will be described.

FIG. 19 and FIG. 20 are conceptual views schematically showing the main part structure of the magnetoresistive effect element according to the embodiment of the present invention. That is, these figures show a state in which a magnetoresistive effect element is incorporated in a magnetic head, and FIG. 19 shows a magnetic resistance in a direction substantially parallel to a medium facing surface P facing a magnetic recording medium (not shown). It is sectional drawing which cut | disconnected the effect element. FIG. 20 is a sectional view of the magnetoresistive effect element cut in a direction perpendicular to the medium facing surface P.

The magnetoresistive effect element illustrated in FIGS. 19 and 20 is an element having a hard abutted structure, and the lower electrode 12 and the upper electrode are provided above and below the magnetoresistive effect film 14. 19, and a bias magnetic field applying film 16 and an insulating film 18 are laminated and provided on both side surfaces of the magnetoresistive effect film 14 in FIG. Further, as illustrated in FIG. 20, the protective layer 30 is formed on the medium facing surface of the magnetoresistive effect film 4.
Is provided.

The magnetoresistive film 4 has the structure according to the embodiment of the present invention, as described above with reference to FIGS. That is, by combining the material systems in which the scattering parameters β and γ are both negative, it has a laminated structure that can obtain a large negative magnetoresistive effect.

The sense current for the magnetoresistive film 4 is
As indicated by an arrow A, the electrodes 12 and 20 arranged above and below the electrode 12 energize the film in a direction substantially perpendicular to the film surface.
In addition, a pair of bias magnetic field applying films 1 provided on the left and right
A bias magnetic field is applied to the magnetoresistive film 14 by the elements 6 and 16. This bias magnetic field controls the magnetic anisotropy of the free layer of the magnetoresistive effect film 14 to form a single magnetic domain, thereby stabilizing the magnetic domain structure and suppressing Barkhausen noise accompanying the movement of the domain wall. be able to.

According to the present invention, the MR change rate is improved by adopting, as the magnetoresistive effect film 14, a structure in which the negative magnetoresistive effect is significantly exhibited. As a result,
It is possible to remarkably improve the sensitivity of the magnetoresistive effect element, and for example, when it is applied to a magnetic head, highly sensitive magnetic reproduction is possible.

(Twelfth Embodiment) Next, the twelfth embodiment of the present invention.
As an example, a magnetic reproducing apparatus equipped with the magnetoresistive effect element of the present invention will be described. That is, the magnetoresistive effect element or the magnetic head of the present invention described with reference to FIGS. 1 to 20 can be incorporated in, for example, a recording / reproducing integrated magnetic head assembly and mounted in a magnetic recording / reproducing apparatus.

FIG. 21 is a main part perspective view illustrating a schematic structure of such a magnetic recording / reproducing apparatus. That is, the magnetic recording / reproducing apparatus 150 of the present invention is an apparatus of the type using a rotary actuator. In the figure, a recording medium disc 200 is mounted on a spindle 152,
The motor is rotated in the direction of arrow A by a motor (not shown) in response to a control signal from a drive device controller (not shown). The magnetic recording / reproducing apparatus 150 of the present invention is provided with a plurality of medium disks 20.
It may have 0.

A head slider 153 for recording / reproducing information stored in the medium disk 200 is attached to the tip of a thin film suspension 154. Here, the head slider 153 has, for example, the magnetoresistive effect element or the magnetic head according to any of the above-described embodiments mounted near the tip thereof.

When the medium disk 200 rotates, the medium facing surface (ABS) of the head slider 153 is held with a predetermined flying height above the surface of the medium disk 200. Alternatively, the slider may be a so-called “contact traveling type” in which the slider contacts the medium disk 200.

The suspension 154 is connected to one end of an actuator arm 155 having a bobbin portion for holding a drive coil (not shown). A voice coil motor 156, which is a kind of linear motor, is provided at the other end of the actuator arm 155. The voice coil motor 156 includes a drive coil (not shown) wound around the bobbin of the actuator arm 155, and a magnetic circuit including a permanent magnet and a facing yoke that are arranged to face each other so as to sandwich the coil.

The actuator arm 155 is held by ball bearings (not shown) provided at the upper and lower portions of the spindle 157, and the voice coil motor 156.
With this, it is possible to freely rotate and slide.

FIG. 22 is an enlarged perspective view of the magnetic head assembly ahead of the actuator arm 155 as seen from the disk side. That is, the magnetic head assembly 1
The reference numeral 60 has an actuator arm 155 having, for example, a bobbin portion that holds a drive coil, and a suspension 154 is connected to one end of the actuator arm 155. A head slider 153 equipped with any of the magnetoresistive effect elements or magnetic heads described above with reference to FIGS. 1 to 20 is attached to the tip of the suspension 154. The suspension 154 has a lead wire 164 for writing and reading signals, and the lead wire 164 and each electrode of the magnetic head incorporated in the head slider 153 are electrically connected. In the figure, 165 is an electrode pad of the magnetic head assembly 160.

According to the present invention, by providing the magnetoresistive effect element or magnetic head of the present invention as described above with reference to FIGS. 1 to 20, magnetic recording is performed on the medium disk 200 at a higher recording density than before. It is possible to reliably read the information provided.

(Thirteenth Embodiment) Next, the thirteenth embodiment of the present invention will be described.
As an example, a magnetic memory equipped with the magnetoresistive effect element of the present invention will be described. That is, FIGS.
0 is used to, for example, a random access magnetic memory (magnetic random access m) in which memory cells are arranged in a matrix.
emory) and other magnetic memory can be realized.

FIG. 23 is a conceptual diagram illustrating the matrix configuration of the magnetic memory of this embodiment.

That is, the figure shows the circuit configuration of the embodiment when the memory cells are arranged in an array. A column decoder 350 and a row decoder 351 are provided to select one bit in the array, and the switching transistor 330 is turned on by the bit line 334 and the word line 332 to be uniquely selected and detected by the sense amplifier 352. As a result, the bit information recorded in the magnetic recording layer of the magnetoresistive effect element 321 can be read.

Bit information is written by a magnetic field generated by passing a write current through a specific write word line 323 and bit line 322.

FIG. 24 is a conceptual diagram showing another specific example of the matrix configuration of the magnetic memory of this embodiment. That is, in this specific example, the bit lines 322 and the word lines 334 arranged in a matrix are selected by the decoders 360 and 361, respectively, and a specific memory cell in the array is selected. Each memory cell has a structure in which a magnetoresistive effect element 321 and a diode D are connected in series. Here, the diode D has a role of preventing the sense current from bypassing in the memory cells other than the selected magnetoresistive effect element 321.

Writing is performed by a magnetic field generated by applying a write current to each of the specific bit line 322 and write word line 323.

FIG. 25 is a conceptual diagram showing a cross-sectional structure of a main part of the magnetic memory according to the embodiment of the present invention. 26 is a cross-sectional view taken along the line AA 'of FIG.

That is, the structure shown in these figures corresponds to one memory cell included in the magnetic memory illustrated in FIG. That is, it is a memory cell of a 1-bit portion of a magnetic memory that operates as a random access memory. This memory cell has a storage element portion 311 and an address selection transistor portion 312.

The storage element portion 311 includes a magnetoresistive effect element 321 and a pair of wirings 322 and 324 connected to the magnetoresistive effect element 321.
Have and. The magnetoresistive effect element 321 is shown in FIGS.
The magnetoresistive effect element of the present invention as described above with respect to the present invention, which has the GMR effect, the TMR effect, and the like, and exhibits a large negative magnetoresistive effect.

In the case of having the GMR effect, a sense current may be passed through the magnetoresistive effect element 321 at the time of reading bit information to detect the resistance change.

In particular, magnetic layer / nonmagnetic tunnel layer /
When a ferromagnetic double tunnel junction having a structure of magnetic layer / non-magnetic tunnel layer / magnetic layer is included, a magnetoresistive effect can be obtained by a resistance change due to the tunnel magnetoresistive (TMR) effect.

In these structures, one of the magnetic layers can act as a magnetic pinned layer and any of the other magnetic layers can act as a magnetic recording layer.

On the other hand, the selection transistor portion 312 is provided with a transistor 330 connected via a via 326 and a buried wiring 328. The transistor 330 performs a switching operation according to the voltage applied to the gate 332, and controls the opening / closing of the current path between the magnetoresistive effect element 321 and the wiring 334. In addition, below the magnetoresistive effect element 321, write wiring 323 is provided.
Are provided in a direction substantially orthogonal to the wiring 322. The write wirings 322 and 323 can be formed of, for example, aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), or an alloy containing any of these.

In the memory cell having such a structure, when the bit information is written in the magnetoresistive effect element 321,
A write pulse current is passed through the wirings 322 and 323, and a synthetic magnetic field induced by those currents is applied to appropriately reverse the magnetization of the recording layer of the magnetoresistive effect element.

When reading the bit information, the magnetoresistive effect element 321 including the wiring 322 and the magnetic recording layer.
And a lower electrode 324, and a sense current is caused to flow therethrough, and the resistance value of the magnetoresistive effect element 321 or a change in the resistance value is measured.

In the magnetic memory of this example, a large negative magnetoresistive effect can be obtained by using the magnetoresistive effect element as described above with reference to FIGS. It is possible to reliably control the magnetic domain of the layer, ensure reliable writing, and also reliably perform reading.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific structure of the magnetoresistive film, and other shapes and materials such as electrodes, bias applying films, and insulating films, the present invention can be similarly carried out by appropriately selecting from a range known to those skilled in the art. , A similar effect can be obtained.

For example, when the magnetoresistive effect element is applied to a reproducing magnetic head, the magnetic shields may be provided above and below the element to define the detection resolution of the magnetic head.

Further, the present invention can be similarly applied to a magnetic head or a magnetic reproducing apparatus of not only the longitudinal magnetic recording system but also the perpendicular magnetic recording system to obtain the same effect.

Further, the magnetic reproducing apparatus of the present invention may be a so-called fixed type in which a specific recording medium is constantly provided, or a so-called “removable” type in which the recording medium is replaceable.

In addition, based on the magnetic head and the magnetic storage / reproducing apparatus described above as the embodiments of the present invention, all magnetoresistive effect elements, magnetic heads, and magnetic storage / reproduction that can be appropriately modified and implemented by those skilled in the art. Devices and magnetic memories are likewise within the scope of the invention.

[0142]

As described in detail above, according to the present invention, a magnetic material having a negative spin-dependent bulk scattering parameter β and a spacer layer capable of obtaining a negative spin-dependent interface scattering parameter γ are combined. As a result, a large magnetoresistance change rate can be obtained while utilizing the negative magnetoresistance effect.

As a result, a highly sensitive magnetic detection can be stably obtained, a magnetic head having a high output and a high S / N even at a high recording density, a magnetic reproducing apparatus equipped with the magnetic head, and a highly integrated magnetic memory. It is possible to provide such as, and industrial merit is enormous.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a cross-sectional structure of a main part of a magnetoresistive effect element of the present invention.

FIG. 2 is a conceptual diagram illustrating the effect of combination of β and γ on electrons.

FIG. 3 is a schematic diagram showing a cross-sectional structure of a main part of a first magnetoresistive effect element according to an example of the present invention.

FIG. 4 is a schematic diagram showing a cross-sectional structure of a main part of a second magnetoresistive effect element according to an example of the present invention.

FIG. 5 is a conceptual diagram showing a laminated structure of the magnetoresistive effect element according to the first embodiment of the present invention and each comparative example.

FIG. 6 is a table showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of the first example and the comparative example of the present invention.

FIG. 7 is a table showing the materials of each of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of the second example and the comparative example of the present invention.

FIG. 8 is a table showing the materials of each of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of the third example and the comparative example of the present invention.

FIG. 9 is a table showing the materials of each of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample as the fourth example and comparative example of the present invention.

FIG. 10 shows each sample of the fifth embodiment of the present invention,
It is a list showing the material of each of these layers, and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area.

FIG. 11 is a schematic view showing a laminated body manufactured as a sixth embodiment of the present invention.

FIG. 12 is a graph of each sample of the sixth embodiment of the present invention,
It is a list showing the material of each of these layers, and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area.

FIG. 13 is a schematic view showing a laminated structure of a magnetoresistive effect element according to a seventh embodiment of the present invention.

FIG. 14 is a list showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each of the samples of the seventh example and the comparative example of the present invention.

FIG. 15 is a schematic view showing a laminated structure of a magnetoresistive effect element according to an eighth embodiment of the present invention.

FIG. 16 is a list showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of the eighth example and comparative example of the present invention.

FIG. 17 is a list showing the materials of each of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of the ninth example and the comparative example of the present invention.

FIG. 18 is a table showing the materials of these layers and the obtained magnetoresistance change amount AΔR [mΩμm ² ] per unit area in each sample of the tenth example of the present invention and the comparative example.

FIG. 19 is a conceptual diagram schematically showing a main part configuration of a magnetoresistive effect element according to an embodiment of the present invention.

FIG. 20 is a conceptual diagram schematically showing a main part configuration of a magnetoresistive effect element according to an embodiment of the present invention.

FIG. 21 is a perspective view of a main part illustrating a schematic configuration of a magnetic recording / reproducing apparatus of the present invention.

FIG. 22 is an enlarged perspective view of the magnetic head assembly from the actuator arm 155 as viewed from the disk side.

FIG. 23 is a conceptual diagram illustrating the matrix configuration of the magnetic memory of the present invention.

FIG. 24 is a conceptual diagram showing another specific example of the matrix configuration of the magnetic memory of the present invention.

FIG. 25 is a conceptual diagram showing a cross-sectional structure of a main part of a magnetic memory according to an embodiment of the present invention.

FIG. 26 is a cross-sectional view taken along the line A-A ′ of FIG. 24.

[Explanation of symbols]

12 Lower electrode 14 Magnetoresistive film 16 hard film 18 Passivation film 20 upper electrode 150 Magnetic recording / reproducing device 152 spindle 153 head slider 154 suspension 155 actuator arm 156 voice coil motor 157 spindle 160 Magnetic head assembly 164 Lead wire 165 in the figure 200 media discs 200 recording media disc About 200 nm 311 Memory element part 312 Transistor for address selection 312 Transistor part for selection 321 Magnetoresistive effect element 322 bit line 322 wiring 323 word line 323 wiring 324 Lower electrode 326 via 328 wiring 330 switching transistor 330 transistor 332 gate 332 word line 334 bit line 334 word lines 334 wiring 350 column decoder 351 row decoder 352 sense amplifier 360 decoder AB Adjacent underlayer AC anti-parallel coupling layer AF antiferromagnetic layer BF Underlayer CA protective layer D diode F free layer (magnetization free layer) P pin layer (magnetization pinned layer) S spacer layer (non-magnetic intermediate layer) SF spin filter layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01F 10/32 H01F 10/32 (72) Inventor Hiromi Fukuya 1 Komukai-Toshiba-cho, Kawasaki-shi, Kanagawa Incorporated company Toshiba Research and Development Center (72) Inventor Hitoshi Iwasaki 1 Komukai-cho, Komukai-shi, Kawasaki-shi, Kanagawa Prefecture Incorporated Toshiba Research and Development Center (72) Inventor Masaji Sahashi Komukai, Sachi-ku, Kawasaki-shi, Kanagawa Toshiba Town No. 1 F-term in the research and development center of Toshiba Corporation (reference) 5D034 BA02 BA03 BA04 BA05 BA09 CA08 5E049 AC05 BA12 DB12

Claims (9)

[Claims] 1. A magnetization pinned layer including a first ferromagnetic film whose magnetization direction is pinned substantially in one direction, and a second ferromagnetic film whose magnetization direction changes in response to an external magnetic field. A magnetoresistive effect film having a magnetization free layer including a nonmagnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; and a magnetoresistive effect film substantially perpendicular to a film surface of the magnetoresistive effect film. A pair of electrodes electrically connected to the magnetoresistive film for passing a sense current in a direction, at least one of the first and second ferromagnetic films is scandium (Sc). , Titanium (Ti), vanadium (V), chromium (Cr), arsenic (As), niobium (N
b), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), tantalum (T
M1 containing at least one selected from the group consisting of a), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir) and platinum (Pt).
, Iron (Fe), cobalt (Co), nickel (N
i) and the composition formula: (Fe _a Co _b Ni _c ) _100-d M1 _d (however, 0
≦ a <100 atomic%, 0 ≦ b <100 atomic%, 0 ≦ c <
100 atom%, a + b + c = 100, 0.5 atom% ≦ d
<50 atomic%), and the non-magnetic intermediate layer contains at least either chromium (Cr) or ruthenium (Ru). 2. A magnetization pinned layer including a first ferromagnetic film whose magnetization direction is pinned substantially in one direction, and a second ferromagnetic film whose magnetization direction changes in response to an external magnetic field. A magnetoresistive effect film having a magnetization free layer including a nonmagnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; and a magnetoresistive effect film substantially perpendicular to a film surface of the magnetoresistive effect film. A pair of electrodes electrically connected to the magnetoresistive film for passing a sense current in a direction, at least one of the first and second ferromagnetic films is made of scandium (Sc). ), Titanium (Ti), vanadium (V), chromium (Cr), arsenic (As), niobium (Nb), molybdenum (Mo), technetium (T)
c), ruthenium (Ru), rhodium (Rh), tantalum (Ta), tungsten (W), rhenium (Re),
Osmium (Os), iridium (Ir) and platinum (P
t) at least one element M1 selected from the group consisting of, iron (Fe), cobalt (Co), and nickel (Ni), the composition formula: (Fe _a Co _b Ni _c ) _100-d M1 _d (However, 0
≦ a <100 atomic%, 0 ≦ b <100 atomic%, 0 ≦ c <
100 atom%, a + b + c = 100, 0.5 atom% ≦ d
<50 atomic%), and the nonmagnetic intermediate layer includes a layer containing at least either chromium (Cr) or ruthenium (Ru) and copper (C).
u), silver (Ag), gold (Au) and aluminum (A
A magnetoresistive effect element comprising: a laminate of a layer containing at least one selected from the group consisting of l) as a main component. 3. A magnetization pinned layer including a first ferromagnetic film whose magnetization direction is pinned substantially in one direction, and a second ferromagnetic film whose magnetization direction changes in response to an external magnetic field. A magnetoresistive effect film having a magnetization free layer including a nonmagnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; and a magnetoresistive effect film substantially perpendicular to a film surface of the magnetoresistive effect film. A pair of electrodes electrically connected to the magnetoresistive effect film in order to pass a sense current in a direction, and the nonmagnetic intermediate layer comprises copper (Cu), silver (Ag), gold (A).
u), chromium (Cr), palladium (Pd), platinum (P
t), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), technetium (T
c), at least one element M2 selected from the group consisting of rhenium (Re), molybdenum (Mo), tungsten (W), niobium (Nb), tantalum (Ta), zirconium (Zr) and hafnium (Hf). A magnetoresistive effect element comprising an alloy of: and an element M3 selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), and manganese (Mn). 4. The magnetoresistive effect according to claim 3, wherein the composition e of the alloy represented by the composition formula M2 _100-e M3 _e is in the range of 0 <e ≦ 30 atomic%. element. 5. A magnetization pinned layer including a first ferromagnetic film whose magnetization direction is pinned substantially in one direction, and a second ferromagnetic film whose magnetization direction changes in response to an external magnetic field. A magnetoresistive effect film having a magnetization free layer including a nonmagnetic intermediate layer provided between the magnetization pinned layer and the magnetization free layer; and a magnetoresistive effect film substantially perpendicular to a film surface of the magnetoresistive effect film. A pair of electrodes electrically connected to the magnetoresistive effect film in order to pass a sense current in a direction, and the nonmagnetic intermediate layer comprises copper (Cu), silver (Ag), gold (A).
u), chromium (Cr), palladium (Pd), platinum (P
t), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os), technetium (T
c), at least one selected from the group consisting of rhenium (Re), molybdenum (Mo), tungsten (W), niobium (Nb), tantalum (Ta), zirconium (Zr), and hafnium (Hf). In one layer, iron (Fe), cobalt (Co), nickel (N
A magnetoresistive effect element in which a second layer made of at least one selected from the group consisting of i) and manganese (Mn) is inserted. 6. The magnetoresistive effect element according to claim 5, wherein the layer thickness of the second layer is 0.03 nanometers or more and 0.5 nanometers or less. 7. At least one of the first and second ferromagnetic films is made of scandium (Sc), titanium (T).
i), vanadium (V), chromium (Cr), arsenic (A
s), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (R)
h), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir)
And at least one element M1 selected from the group consisting of platinum (Pt), iron (Fe), and cobalt (Co)
And nickel (Ni), the composition formula: (Fe _a Co _b Ni _c ) _100-d M1 _d (however, 0
≦ a <100 atomic%, 0 ≦ b <100 atomic%, 0 ≦ c <
100 atom%, a + b + c = 100, 0.5 atom% ≦ d
<50 at.%) It consists of an alloy represented by the following.
2. The magnetoresistive effect element according to any one of 1. 8. A magnetic head comprising the magnetoresistive effect element according to claim 1. Description: 9. A magnetic reproducing apparatus comprising the magnetic head according to claim 8 and capable of reading information magnetically recorded on a magnetic recording medium.