JP2003133614A - Magnetoresistive effect element, magnetoresistive effect head and magnetic recorder and reproducing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase the resistance of a part related to spin dependent conduction and, as a result, to increase the resistance change in a vertical conductive magnetoresistive effect element. SOLUTION: The magnetoresistive effect element is provided with a magnetized layer, a magnetizing layer and a nonmagnetic intermediate layer formed between the magnetized layer and the magnetizing layer and an electrode for conducting a sense current substantially vertically with respect to the film surfaces of the layers. At least one layer of the magnetized layer and the magnetizing layer is constituted of a binary alloy, a ternary alloy or an alloy having the crystal structure of body-centered cubic crystal, shown substantially by T1a T2b or Fec Cod Nie (T1 and T2 are the elements selected from a group consisting of Fe, Co and Ni while shown by 25 at.%<=a<=75 at.%, 25 at.%<=b<=75 at.%, a+b=100, 0<e<=63 at.%, c+d+e=100).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, a magnetic head, and a magnetic recording / reproducing apparatus for flowing a sense current for detecting an external magnetic field in a direction perpendicular to an element film surface.

[0002]

2. Description of the Related Art Conventionally, in reading information recorded on a magnetic recording medium, a reproducing magnetic head having a coil is moved relatively to the recording medium, and electromagnetic induction generated at that time induces the coil. Has been done by the method of detecting the voltage. After that, a magnetoresistive effect element (hereinafter referred to as MR
The element) has been developed and used as a magnetic field sensor, and has also been used as a magnetic head (hereinafter referred to as an MR head) mounted in a magnetic recording / reproducing apparatus such as a hard disk drive.

In recent years, as the magnetic recording medium has been made smaller and has a larger capacity, the relative speed between the reproducing magnetic head and the magnetic recording medium at the time of reading information has become smaller, so that even a small relative speed is large. Expectations are increasing for MR heads that can output output.

In response to such expectations, Fe / Cr and F
A ferromagnetic metal film and a non-magnetic metal film such as e / Cu are alternately laminated under certain conditions, and a multilayer film in which adjacent ferromagnetic metal films are antiferromagnetically coupled, a so-called artificial lattice film is enormous. It has been reported to exhibit a magnetoresistive effect (Phys. Rev. Le.
tt. 61 2474 (1988), Phys. Rev. Lett. 64 2304 (199
(See 0) etc.). However, the artificial lattice film requires a high magnetic field to saturate the magnetization, and is not suitable as a film material for an MR head.

On the other hand, it has been reported that in a multilayer film having a sandwich structure of ferromagnetic layer / nonmagnetic layer / ferromagnetic layer, a large magnetoresistive effect is realized even when the ferromagnetic layers are not antiferromagnetically coupled. There is. That is, the exchange bias magnetic field is applied to one of the two ferromagnetic layers sandwiching the non-magnetic layer to fix the magnetization, and the other ferromagnetic layer is applied to the external magnetic field (signal magnetic field, etc.).
To reverse the magnetization. As a result, a large magnetoresistive effect can be obtained by changing the relative angle between the magnetization directions of the two ferromagnetic layers arranged with the nonmagnetic layer sandwiched therebetween. This type of multilayer film is called a spin valve (Phys. Rev., B45, 806 (1992), J. Appl. Phy.
s., 69, 4774 (1981), etc.). Since the spin valve can saturate the magnetization in a low magnetic field, it is suitable for an MR head and has already been put into practical use. However, the magnetoresistance change rate is up to about 20%, and the magnetoresistance change rate is higher. The MR element showing is required.

By the way, conventional MR elements are used by passing a sense current through the element film surface (Current
in plane: CIP). On the other hand, the sense current is applied perpendicularly to the element film surface (Current perpendicular to plan
(e: CPP), and there is also a report that a magnetoresistance change rate about 10 times that of CIP can be obtained (J. Phys. Condens. Matte
r., 11, 5717 (1999)), and a rate of change of 100% is not impossible. However, in the spin valve structure, the total film thickness of the spin-dependent layer is very thin and the number of interfaces is small, so that the resistance itself in the case of vertical energization becomes small and the absolute output value also becomes small. When the spin valve having the film structure conventionally used for CIP is vertically energized, the absolute output value AΔ per 1 μm ² when the thickness of the pinned layer and the free layer is 5 nm is obtained.
R is as small as about 0.5 mΩμm ² . Therefore, it is necessary to further increase the output.

In order to obtain a large output with the spin valve structure, the resistance value of the part related to spin-dependent conduction is increased,
It is important to increase the amount of resistance change.

[0008]

An object of the present invention is to provide a perpendicular current-carrying magnetoresistive effect element having a spin valve structure by disposing an appropriate material in at least one of a pin layer and a free layer. Is to increase.

[0009]

In a magnetoresistive effect element according to one aspect of the present invention, a magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, and the magnetization direction changes according to an external magnetic field. A magnetic free layer, a non-magnetic intermediate layer formed between the magnetic pinned layer and the magnetic free layer, and the magnetic pinned layer,
An electrode for passing a sense current substantially perpendicular to the film surfaces of the non-magnetic intermediate layer and the magnetization free layer, wherein at least one layer of the magnetization pinned layer and the magnetization free layer has a substantially general formula. (1) or (2) T1 _a T2 _b (1) Fe _c Co _d Ni _e (2) (where T1 and T2 are different elements selected from the group consisting of Fe, Co and Ni, and 25
at% ≦ a ≦ 75 at%, 25 at% ≦ b ≦ 75 at
%, A + b = 100, 0 <c ≦ 75 at%, 0 <d ≦ 7
5at%, 0 <e ≦ 63at%, c + d + e = 100)
Is formed from a binary alloy or a ternary alloy.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially the following general structure. Formula (3) or (4) (T1 _{a / 100} T2 _{b / 100} ) _100-x M1 _{x (3)} (T1 _{c / 100} T2 _{d / 100} T3 _{e / 100} ) _100-x M1 _x (4) (here Where T1, T2 and T3 are different elements selected from the group consisting of Fe, Co and Ni, and M1 is Cr, V, Ta, Nb, Sc, Ti, Mn,
Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, R
e, Ru, Rh, Ir, Pd, Pt, Ag, Au, B,
Al, In, C, Si, Sn, Ca, Sr, Ba, O,
At least one element selected from the group consisting of N and F, and 25 at% ≦ a ≦ 75 at%, 25 at%
≦ b ≦ 75 at%, a + b = 100, 5 at% ≦ c ≦ 9
0 at%, 5 at% ≤ d ≤ 90 at%, 5 at% ≤ e ≤
90 at%, c + d + e = 100, 0.1 at% ≦ x ≦
30 at%).

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is of a general formula. (5) Fe _100-a T1 _a (5) (where T1 is Co, Cr, V, Ni, Rh, Ti,
At least one element selected from the group consisting of Mo, W, Nb, Ta, Pd, Pt, Zr and Hf,
0at% ≦ a <70at%), and its crystal structure is body-centered cubic.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is of a general formula. (6) Fe _100-a T1 _a (6) (where T1 is Co, 0 at% ≤ a ≤ 80 at
%, When T1 is Cr, 0 at% ≦ a ≦ 80 at%, T1
When V is 0 at% ≤ a ≤ 70 at%, when T1 is Ni 0 at% ≤ a ≤ 20 at%, when T1 is Rh 0 at%
% ≤ a ≤ 55 at%, when T1 is Ti 0 at% ≤ a ≤
51 at%), and its crystal structure is body-centered cubic.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization fixed layer and the magnetization free layer is:
Fe-Co-Ni alloy, Co-Mn-Fe alloy and F
It is formed of a ternary alloy selected from the group consisting of e-Cr-Co alloys, and its crystal structure is body-centered cubic.
The composition region of the Fe-Co-Ni alloy forming a body-centered cubic crystal is shown in the phase diagram of FIG. With thin films, body-centered cubic crystals can be formed up to the shaded area even if they are not in equilibrium depending on the quality of the film. Figure 2
The phase diagram of No. 1 shows the composition region of a Co-Mn-Fe alloy forming a body-centered cubic crystal. Here again, body-centered cubic crystals can be taken up to the shaded portion as well. Further, the Fe-Cr-Co alloy can form a body-centered cubic crystal in almost the entire composition range.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (7) to (10) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (7) (Fe-Co-Ni) _100-x M _{x (8)} (Co-Mn-Fe) ) _100-x M _{x (9)} (Fe-Cr-Co) _100-x M _{x (10)} (where T1 is Co, Cr, V, Ni, Rh, Ti,
At least one element selected from the group consisting of Mo, W, Nb, Ta, Pd, Pt, Zr and Hf,
0 at% ≤ a <70 at%, Fe-Co-Ni is a body-centered cubic composition range, Co-Mn-Fe is a body-centered cubic composition range, Fe-Cr-Co is a body-centered cubic composition range, M is M
When at least one element selected from the group consisting of n, Cu, Re, Ru, Pd, Pt, Ag, Au, and Al is 0.1 at% ≦ x ≦ 20 at%, M is Sc, Z
n, Ga, Ge, Zr, Hf, Y, Tc, B, In,
When it is at least one element selected from the group consisting of C, Si, Sn, Ca, Sr, Ba, O, F and N, 0.1 at% ≤ x ≤ 10 at%). , And its crystal structure is body-centered cubic.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (11) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (11) (where T1 is Co, 0 at% ≤ a ≤ 80 at
%, When T1 is Cr, 0 at% ≦ a ≦ 80 at%, T
When 1 is V, 0 at% ≦ a ≦ 70 at% and T1 is Ni
0 at% ≦ a ≦ 10 at%, T1 is Rh, 0 at% ≦ a ≦ 55 at%, and T1 is Ti, 0
at% ≦ a ≦ 51 at%, M is Mn, Cu, Re, R
0.1a when at least one element selected from the group consisting of u, Pd, Pt, Ag, Au and Al
t% ≦ x ≦ 20 at%, M is Sc, Zn, Ga, Ge,
Zr, Hf, Y, Tc, B, In, C, Si, Sn, C
When it is at least one element selected from the group consisting of a, Sr, Ba, O, F and N, 0.1 at% ≦
x ≦ 10 at%), and its crystal structure is body-centered cubic.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (12) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (12) (where T1 is at least one element of Co and Ni, and 0 at% ≤ a ≤ 50 at %, M is Sc, T
i, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y,
Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
at least one element selected from the group consisting of a, O, N and F, and 0.1 at% ≦ x ≦ 30 at%)
It is formed from an alloy represented by.

Further, a magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (13) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (13) (where T1 is at least one element of Co and Ni, 0 at% ≤ a ≤ 50 at%, M is at least one element selected from the group consisting of Cu, Zn and Ga, and is formed from an alloy represented by 0.1 at% ≦ x ≦ 30 at%).

Further, a magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (14) Fe _100-x M _x (14) (where M is at least one element selected from the group consisting of Ni and Co, and 0.1 at% ≦ x ≦ 5 at
%) Is formed from the alloy.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is of a general formula. (15) (Co _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (15) (where T1 is at least one element of Fe and Ni, and 0 at% ≤ a ≤ 50 at %, M is Cr, V,
Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, G
e, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir,
Pd, Pt, Ag, Au, B, Al, In, C, Si,
At least one element selected from the group consisting of Sn, Ca, Sr, Ba, O, N and F, and 0.1 at
% ≦ x ≦ 30 at%).

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (16) (Co _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (16) (where T1 is at least one element of Fe and Ni, and 0 at% ≤ a ≤ 50 at %, M is Sc, T
At least one element selected from the group consisting of i, Mn, Cu, and Hf, and 0.1 at% ≦ x ≦ 30a
t%).

Further, a magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (17) Co _100-x M _x (17) (where M is at least one element selected from the group consisting of Fe and Ni, and 0.1 at% ≦ x ≦ 5 at
%) Is formed from the alloy.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (18) (Ni _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (18) (where T1 is at least one element of Co and Fe, and 0 at% ≤ a ≤ 50 at %, M is Cr, V,
Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, G
e, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir,
Pd, Pt, Ag, Au, B, Al, In, C, Si,
At least one element selected from the group consisting of Sn, Ca, Sr, Ba, O, N and F, and 0.1 at
% ≦ x ≦ 30 at%).

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one layer of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (19) (Ni _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (19) (where T1 is at least one element of Fe and Co, and 0 at% ≤ a ≤ 50 at %, M is Sc, T
at least one element selected from the group consisting of i, Mn, Zn, Ga, Ge, Zr and Hf, and 0.1
at% ≦ x ≦ 30 at%).

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (20) Ni _100-x M _x (20) (where M is at least one element selected from the group consisting of Fe and Co, and 0.1 at% ≦ x ≦ 5
at%).

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially of the general formula. (21-a) or _{(21-b) (T1 a} T2 b) 100-x M x (21-a) (Fe c Co d Ni d) 100-x M x (21-b) ( wherein, T1 , T2 and T3 are elements different from each other selected from the group consisting of Fe, Co and Ni, and are 25 at% ≦ a ≦ 75 at% and 25 at% ≦ b ≦ 7.
5 at%, a + b = 100, 0 <c ≦ 75 at%, 0 <
d ≦ 75 at%, 0 <e ≦ 63 at%, c + d + e = 1
00, and M is Cr, V, Ta, Nb, Sc, Ti, M
n, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc,
Re, Ru, Rh, Ir, Pd, Pt, Ag, Au,
B, Al, In, C, Si, Sn, Ca, Sr, Ba,
At least one selected from the group consisting of O, N and F
It is a seed element and is formed from a binary alloy or a ternary alloy represented by 0.1 atomic% ≤ x ≤ 20 atomic%.

A magnetoresistive effect element according to another aspect of the present invention is of the same vertical conduction type as described above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially ( i) the general formula (22-a) or _{(22-b) T1 a T2} b (22-a) Fe c Co d Ni c (22-b) ( wherein, T1, T2 and T3, Fe, Co and 25 at% ≦ a ≦ 75 at% and 25 at% ≦ b ≦ 7 which are different elements selected from the group consisting of Ni.
5 at%, a + b = 100, 0 <c ≦ 75 at%, 0 <
d ≦ 75 at%, 0 <e ≦ 63 at%, c + d + e = 1
00) and one or more layers formed of a binary or ternary alloy, and (ii) Cr, V, Ta, Nb, Sc, T
i, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y,
Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of a, O, N and F
One or more layers are alternately laminated.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and at least one of the magnetization pinned layer and the magnetization free layer is of a general formula. (23) or _{(24) (Ni a Fe b} Co c) 100-x M x (23) (Ni d Fe 100-d) 100-x M x (24) ( where, <a ≦ 75 atomic%, 0 <b ≦ 75 atomic%, 0
<C ≦ 75 atomic%, a + b + c = 100 atomic%, 75 atomic% ≦ d ≦ 85 atomic%, and M is Cr, V, Ta, N
b, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Z
r, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd,
Pt, Ag, Au, B, Al, In, C, Si, Sn,
At least one element selected from the group consisting of Ca, Sr, Ba, O, N and F, and 0.1 atomic% ≤ x
≦ 20 atomic%).

A magnetoresistive effect element according to another aspect of the present invention is of the same vertical conduction type as described above, and at least one of the magnetization pinned layer and the magnetization free layer is substantially ( i) General formula (25) or (26) Ni _a Fe _b Co _c (25) Ni _d Fe _100-d (26) (where 0 <a ≦ 75 atomic%, 0 <b ≦ 75 atomic%,
0 <c ≦ 75 atom%, a + b + c = 100 atom%, 75
(Ii) Cr, V, Ta, Nb, S, and (ii) one or more layers formed of an alloy represented by (atomic% ≤ d ≤ 85 atomic%).
c, Ti, Mn, Cu, Zn, Ga, Ge, Zr, H
f, Y, Tc, Re, Ru, Rh, Ir, Pd, Pt,
Ag, Au, B, Al, In, C, Si, Sn, Ca,
It has a structure in which one or more layers having a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of Sr, Ba, O, N and F are alternately laminated.

Further, a magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and the magnetization pinned layer is substantially of the general formula (27) or (28) (Fe _{a Co b Ni c) x M 100} -x (27) (Fe d Co 100-d) x M 100-x (28) ( where, 0 <a ≦ 75 atomic%, 0 <b ≦ 75 atomic%,
0 <c ≦ 75 atomic%, a + b + c = 100 atomic%, 45
Atomic% ≤ d ≤ 55 atomic%, and M is Cr, V, Ta, N
b, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Z
r, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd,
Pt, Ag, Au, B, Al, In, C, Si, Sn,
At least one element selected from the group consisting of Ca, Sr, Ba, O, N and F, and 0.1 atomic% ≤ x
≦ formed of an alloy represented by 20 atomic%), the magnetization free layer is substantially formula (29) or _{(30) (Ni e Fe f} Co g) x M 100-x (29) (Ni h Fe _100-h ) _x M _100-x (30) (wherein 60 atomic% ≤ e ≤ 75 atomic%, 12.5 atomic% ≤ f ≤ 20 atomic%, 12.5 atomic% ≤ g ≤ 20 atomic% , E + f + g = 100 atom%, 75 atom% ≦ h ≦ 85
Atomic% and M is Cr, V, Ta, Nb, Sc, Ti,
Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, T
c, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
It is at least one element selected from the group consisting of a, O, N and F, and is formed from an alloy represented by 0.1 atomic% ≤ x ≤ 20 atomic%.

A magnetoresistive effect element according to another aspect of the present invention is a vertical conduction type similar to the above, and the magnetization pinned layer is substantially (i) the general formula (31) or (3).
2) Fe _a Co _b Ni _c (31) Fe _d Co _100-d (32) (where 0 <a ≦ 75 atomic%, 0 <b ≦ 75 atomic%,
0 <c ≦ 75 atomic%, a + b + c = 100 atomic%, 45
One or more layers formed from an alloy represented by: atomic% ≤ d ≤ 55 atomic%, (ii)
Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Z
n, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru,
Rh, Ir, Pd, Pt, Ag, Au, B, Al, I
one or more layers having a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of n, C, Si, Sn, Ca, Sr, Ba, O, N and F. has a laminate structure alternately, the magnetization free layer ferromagnetic layer are substantially, (i) the general formula (33) or _{(34) Ni e Fe f Co} g (33) Ni h Fe 100-h (34 ) (Where, 60 atomic% ≤ e ≤ 75 atomic%, 12.5 atomic% ≤ f ≤ 20 atomic%, 12.5 atomic% ≤ g ≤ 20 atomic%, e + f + g = 100 atomic%, 75 atomic% ≤ h ≦ 85
One or more layers formed from an alloy represented by (atomic%), (ii)
Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Z
n, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru,
Rh, Ir, Pd, Pt, Ag, Au, B, Al, I
one or more layers having a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of n, C, Si, Sn, Ca, Sr, Ba, O, N and F. It has a structure in which layers are alternately stacked.

A magnetic head according to an aspect of the present invention includes any one of the magnetoresistive effect elements described above.

A magnetic recording / reproducing apparatus according to an aspect of the present invention is characterized by including a magnetic recording medium and any one of the magnetoresistive effect elements described above.

[0033]

1 is a sectional view showing a magnetoresistive effect element according to an embodiment of the present invention. The magnetoresistive element shown in FIG. 1 has a lower electrode 11, an underlayer 12, an antiferromagnetic layer 13, a magnetization fixed layer 14, a nonmagnetic intermediate layer 15, a magnetization free layer 16, a protective layer 17, and an upper electrode 18. The magnetoresistive film is sandwiched between the upper electrode 11 and the lower electrode 18, and the sense current flows perpendicularly to the film surface.

As shown in FIG. 2, the stacking order of the magnetoresistive film may be replaced with that of FIG. The structure in which the antiferromagnetic layer is arranged at the bottom as shown in FIG. 1 is called a bottom spin valve, and the structure in which the antiferromagnetic layer is arranged at the top as shown in FIG. 2 is called a top spin valve.

The area of the lower electrode 11 and the upper electrode 18 may be larger than that of the magnetoresistive film as shown in FIG. 3, or the area of the lower electrode 11 and the upper electrode 18 may be smaller than that of the magnetoresistive film as shown in FIG. May be. In addition, the upper electrode 11
The areas of the lower electrode 18 and the lower electrode 18 may be different from each other. The magnetoresistive effect element may have various configurations other than those shown in FIGS.

In the magnetoresistive effect element having the above film structure, it is the interface between the magnetization fixed layer and the magnetization free layer, and each ferromagnetic layer and the nonmagnetic intermediate layer that is involved in the magnetoresistance effect. To increase the output, that is, the absolute value of the amount of change in magnetoresistance, to produce a magnetoresistance effect element that can withstand practical use,
It is effective to optimize the material selection of these parts.

This will be briefly described with reference to FIG.
It FIG. 5 shows the electric resistance of the magnetoresistive effect element of vertical conduction.
It is shown broken down into parts. For vertically energized elements
In addition, the electrical resistance of the electrodes, underlayer, antiferromagnetic layer, etc.
Connected in series. With Ta that is generally used for the underlayer
Has a specific resistance of about 120 μΩcm and is used for the antiferromagnetic layer
The specific resistance of IrMn or PtMn is about 300 μΩcm.
On the other hand, it is often used for the pinned layer and the free layer.
Co₉₀Fe_TenThen about 14μΩcm, Ni₈₀Fe ₂₀Then about
The resistivity is 19 μΩcm, which is as low as one digit. Furthermore, the electrode
Parasitic resistance such as resistance and contact resistance of
If you do, the impact will increase. Therefore, the amount of change is based
Spin-dependent part so that it is not buried in resistance
It is necessary to increase the amount of change in magnetic resistance at.

In the magnetoresistive effect element of the present invention, a high output can be obtained by appropriately selecting the materials of the magnetization fixed layer and the magnetization free layer having the spin dependent resistance.

As concrete magnetoresistive effect elements according to the respective embodiments of the present invention, two kinds of elements described below were actually manufactured and the effects were evaluated.

FIG. 17 shows the first magnetoresistive effect element.
The manufacturing process of this element is as follows. First S
A film of AlO _x 52 of about 500 nm is formed on the i substrate 51,
A resist is applied thereon, and the resist in the portion to be the lower electrode is removed by PEP. Next, RIE (Reactive Ion
Etching) is performed to remove AlO _x in a portion without a resist, and 5 nm Ta / 400 nm Cu / 20 nm Ta is deposited to form the lower electrode 53. Next, CMP (Chemical Me
chanical Polishing) and smoothing
The lower electrode 53 is exposed from the AlO _x 52. A spin valve film 54 having a size of about 3 × 3 μm to 5 × 5 μm is formed on the lower electrode 53. A CoPt hard film 55 of about 30 nm is formed on the side surface of the spin valve film 54. A SiO _x 56 film of about 200 nm is formed on the entire surface as a passivation film. After applying the resist, the resist is removed from the contact hole formation region in the central portion of the spin valve film 54. By RIE and milling, about 0.3μmφ ～ 3μ
A contact hole of mφ is formed. After removing the resist, an upper electrode 57 made of 5 nm Ta / 400 nm Cu / 5 nm Ta and an Au pad (not shown) of about 200 nm are formed.

FIG. 18 shows a second magnetoresistive effect element.
As in the case of FIG. 17, AlO _x 52 is formed on the Si substrate 51.
Is formed, a part of AlO _x 52 is removed, and the lower electrode 53
After forming a film, by performing CMP and smoothing,
The lower electrode 53 is exposed from the AlO _x 52. A spin valve film 54 is formed on the lower electrode 53 and processed into a stripe shape having a width of about 2 μm to 5 μm. A SiO _x 56 film of about 200 nm is formed on the entire surface as a passivation film. After applying the resist, on the spin valve film 54,
About 1.5 μm perpendicular to the longitudinal direction of the spin valve film 54
To 5 μm are removed to define the device size. After removing the resist, an Au film 58 having a thickness of about 100 nm is formed directly on the spin valve film 54 so that the sense current flows uniformly throughout the spin valve film 54. After that, the upper electrode 57 and the pad are formed similarly to the element of FIG.

As a result of measuring the electric resistance characteristics of these elements using the 4-terminal method, it was confirmed that there was no difference in the output between the two elements. In addition, crystal structure analysis was performed using Cu-Kα rays, and morphology was a cross-sectional TEM.
It was confirmed by observation, and the composition distribution was examined by n-EDX. Further, the electronic state of a specific element in the alloy was examined by EXAFS.

[1] The results of examining the proper composition of the ferromagnetic layers forming the magnetization pinned layer and the magnetization free layer will be described.

[0044] was prepared (first embodiment) magnetic by using the magnetization pinned layer and the Co _100-x Fe _x alloy with varying Fe concentration in the magnetization free layer resistive film. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn (antiferromagnetic layer) / 7nmCo
_100-x Fe x (magnetization pinned layer) / 7nmCu (nonmagnetic intermediate _{layer) / 7nmCo 100-x Fe x} ( magnetization free layer) / 10 nm
Ta / upper electrode (numerical value is film thickness).

The film thickness of the magnetization free layer and the magnetization pinned layer is fixed at 7 nm, and the Fe concentration x is 0, 10 at%, 20 at%, 2
7at%, 30at%, 40at%, 50at%, 60
at%, 70 at%, 80 at%, 90 at%, 100
It was changed to at%.

FIG. 6 shows the Fe concentration dependence of the resistance change amount. The vertical axis represents the resistance change amount AΔ per element area 1 μm ^2.
A value R is standardized by the resistance change amount AΔR (0.5 mΩμm ² ) of the element in which the magnetization free layer and the magnetization fixed layer are made of pure Co.

From FIG. 6, the composition effective for increasing the resistance change amount AΔR is that the Fe concentration is 25 at% to 75 at.
%, And more desirably, the composition range is 40 at% to 60 at%.

[0049] was prepared (second embodiment) magnetic by using the magnetization pinned layer and the Ni _100-x Fe _x alloy with varying Fe concentration in the magnetization free layer resistive film. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn / 7nmNi _100-xFe_x/ 7 nm
Cu / 7nm Ni_100-xFe_x/ 10nmTa / upper electrode
(Numbers are film thickness).

The magnetization free layer and the magnetization pinned layer have a fixed film thickness of 7 nm and an Fe concentration of 0, 10 at%, 20 at%, 30.
at%, 40at%, 50at%, 60at%, 70a
It was changed to t%, 80 at%, 90 at%, and 100 at%.

FIG. 7 shows the Fe concentration dependence of the resistance change amount. The vertical axis represents the resistance change amount AΔ per element area 1 μm ^2.
A value R is standardized by the resistance change amount AΔR (0.5 mΩμm ² ) of the element in which the magnetization free layer and the magnetization fixed layer are made of pure Co.

From FIG. 7, the composition effective for increasing the resistance change amount AΔR is that the Fe concentration is 25 at% to 75 at.
%, And more desirably, the composition range is 40 at% to 60 at%.

(Third Embodiment) A magnetoresistive effect film was produced by using a Ni _100-x Co _x alloy with a variable Co concentration for the magnetization pinned layer and the magnetization free layer. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn / 7nmNi _100-xCo_x/ 7 nm
Cu / 7nm Ni_100-xCo_x/ 10nmTa / upper electrode
(Numbers are film thickness).

The magnetization free layer and the magnetization fixed layer have a fixed film thickness of 7 nm and a Co concentration of 0, 10 at%, 20 at%, 30.
at%, 40at%, 50at%, 60at%, 70a
It was changed to t%, 80 at%, 90 at%, and 100 at%.

FIG. 8 shows the dependency of the resistance change amount on the Co concentration. The vertical axis represents the resistance change amount AΔ per element area 1 μm ^2.
A value R is standardized by the resistance change amount AΔR (0.5 mΩμm ² ) of the element in which the magnetization free layer and the magnetization fixed layer are made of pure Co.

From FIG. 8, the composition effective for increasing the resistance change amount AΔR is from Co concentration of 25 at% to 75 at.
%, And more desirably, the composition range is 40 at% to 60 at%.

(Fourth Embodiment) A ternary alloy of Fe, Co and Ni was used for the magnetization pinned layer and the magnetization free layer, and the composition was changed in the same manner as above to produce a magnetoresistive film. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn / 7nmFe _xCo_yNi_z/ 7n
mCu / 7nmFe_xCo_yNi_z/ 10nmTa / upper
Electrode (numerical value is film thickness).

The film thickness of the magnetization free layer and the magnetization pinned layer was fixed to 7 nm, and the composition of the ternary alloy was changed in 10 ways shown by a to j in FIG. FIG. 9 also shows the alloy composition studied in the first to third embodiments. Table 1 shows the composition of the ternary alloy used for the magnetization pinned layer and the magnetization free layer, and the normalized resistance change amount,
That is, the relationship with the value of AΔR (ternary alloy) / AΔR (pure Co) is shown.

[0062]

[Table 1]

In FIG. 10, among Fe, Co and Ni,
The composition of the two types is matched and varied from 0% to 50%, and the rest
Magnetism when changing one composition from 100% to 0%
Indicates the amount of change in air resistance. FIG. 10A shows pure Co- in FIG.
g-fa-e-Ni₅₀Fe ₅₀Alloy composition along the line
10 (b) is pure Fe-dc-c-
a-b-Ni₅₀Co₅₀In alloy composition along the line
Resistance change amount, FIG. 10C shows pure Ni-j-i-a-h-
Fe₅₀Co₅₀Change in alloy composition along the line
Is the amount.

From these figures, the highest
It can be seen that the amount of change in magnetic resistance is shown. Away from the equiatomic composition
As the magnetic resistance changes, the amount of change in magnetic resistance decreases.
When Ni is increased in (c), the rate of decrease is large. these
From the results of Fe_aCo_bNi _cTernary alloy with particularly large magnetism
In order to obtain the air resistance change amount, a ≦ 75 at%, b ≦ 7
A composition satisfying 5 atomic% and b ≦ 63 atomic% is effective.
I understand. Also, Fe_aCo_bNi_cFor ternary alloys, a ≧
25 atomic%, b ≧ 25 atomic%, c ≧ 25 atomic%
It is preferably a composition.

[2] An embodiment in which the ferromagnetic layers forming the magnetization pinned layer and the magnetization free layer are made of Fe, Co, Ni, and alloys of these materials and additive elements will be described.

(Fifth Embodiment) A magnetoresistive effect film was produced using an alloy in which Cu was added to Co ₅₀ Fe ₅₀ for the magnetization pinned layer and the magnetization free layer. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15 nm PtMn / 7 nm (Co _0.5 Fe _0.5 ).
_100-y Cu _y / 7 nm Cu / 7 nm (Co _0.5 Fe _0.5 ).
_100-y Cu _y / 10 nm Ta / upper electrode (numbers are film thickness).

The magnetization free layer and the magnetization fixed layer are fixed at 7 nm, and the Cu addition amount y is 0 at%, 0.5 at%, and 2 at.
%, 5 at%, 10 at%, 15 at%, 20 at%,
It was changed to 30 at% and 40 at%.

FIG. 11 shows the dependency of the resistance change amount on the Cu addition amount. The vertical axis represents the amount of resistance change A per element area of 1 μm ^2.
A value obtained by normalizing ΔR by the resistance change amount AΔR (0.5 mΩμm ² ) of the element in which the magnetization free layer and the magnetization fixed layer are made of pure Co is shown.

From FIG. 11, it was found that the effective Cu addition amount for increasing the resistance change amount AΔR is 20 at% or less, more preferably 5 at% or less.

Similarly, when the additive element and the amount of addition to Co ₅₀ Fe ₅₀ used for the magnetization pinned layer and the magnetization free layer are changed, the resistance change amount of the element in which the magnetization free layer and the magnetization pinned layer are made of pure Co The standardized resistance change is Cr1at%
At 2 times, V1 at% at 2 times, Zn5 at% at 3 times, Ga
It was found that 2 at% tripled, Sc2 at% tripled, Ti2 at% tripled, Mn2 at% doubled, and Hf2 at% tripled, and these additive elements were effective in increasing the resistance change amount. With any additive element, the addition amount is 0.1
At% to 30 at%, more preferably 10 at% or less is effective. Further, it has been confirmed that AΔR is increased 5.5 times when Ni is added at 5 at% or less.

Similarly, Ta, Nb, and G are added elements.
e, Zr, Y, Tc, Re, Ru, Rh, Ir, Pd,
Pt, Ag, Au, B, Al, In, C, Si, Sn,
Even when using Ca, Sr, or Ba, 0.1 at% to 3
An increase in the amount of change in magnetic resistance was observed with the addition of 0 at%.

The effect of increasing the amount of change in magnetoresistance due to the above-mentioned additive element is not limited to the Co ₅₀ Fe ₅₀ alloy, but Co--Fe 2
Binary alloy, Ni-Fe binary alloy, Ni-Co binary alloy, F
In any composition range of the e-Co-Ni ternary alloy,
It was also recognized.

(Sixth Embodiment) A magnetoresistive effect film was manufactured using an alloy in which an additive element was added to Fe for the magnetization pinned layer and the magnetization free layer. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn / 7nmFe _100-xM_x/ 7nmC
u / 7nmFe_100-xM_x/ 10 nm Ta / upper electrode (number
The value is the film thickness).

The film thickness of the magnetization free layer and the magnetization pinned layer is fixed to 7 nm, and the addition amount x of the additional element M is 0, 5 at% and 10 a.
t%, 15at%, 20at%, 30at%, 40at
% And changed.

When Cu is used as the additive element, the effective additive amount for increasing the resistance change amount AΔR is 0.5a.
It was found that the content was t% to 30 at%, more preferably 20 at% or less.

The normalized resistance change amount with various addition elements and addition amounts was 1.5 times Zn3at% and Ga2at%.
Was 1.5 times, and it was found that these additive elements are effective in increasing the resistance change amount. Any additive element,
0.1 at% to 30 at%, more preferably 10 at%
The following are effective. For Ni, 0.1 at%
It has been confirmed that the addition of ~ 5 at% increases AΔR by 1.3 times.

Similarly, as additive elements, Cr, V, Ta,
Nb, Sc, Ti, Mn, Ge, Zr, Hf, Y, T
c, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
Also when "a" was used, an increase in the amount of change in magnetoresistance was observed with the addition of about 30 at% or less.

The effect of increasing the amount of resistance change due to the above-mentioned additive element is not limited to pure Fe, but Fe-based alloy, that is, Fe
The same was found in the alloy occupying 0 at% or more.

(Seventh Embodiment) A magnetoresistive film was produced using an alloy in which an additive element was added to Co for the magnetization pinned layer and the magnetization free layer. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn / 7nmCo _100-xM_x/ 7nmC
u / 7nmCo_100-xM_x/ 10 nm Ta / upper electrode (number
The value is the film thickness).

The magnetization free layer and the magnetization pinned layer are fixed to a film thickness of 7 nm, and the addition amount x of the additional element M is 0, 5 at% and 10 at.
%, 15 at%, 20 at%, 30 at%, 40 at%
I changed it.

The normalized resistance change amount with various addition elements and addition amounts was 1.3 times Sc5at% and Ti2at%.
Was 1.8 times, Mn2 at% was 1.4 times, Cu2 at% was 1.6 times, and Hf2 at% was twice, and it was found that these additive elements are effective in increasing the resistance change amount. Any additive element is effective at 0.5 at% to 30 at%, more preferably 10 at% or less.

For Fe and Ni, 5 at%
It has been confirmed that the following additions increase AΔR by 1.5 times and 1.3 times, respectively.

Similarly, as additive elements, Cr, V, Ta,
Nb, Zn, Ga, Ge, Zr, Y, Tc, Re, R
u, Rh, Ir, Pd, Pt, Ag, Au, B, Al,
Even when In, C, Si, Sn, Ca, Sr, or Ba was used, an increase in the amount of change in magnetoresistance was observed with the addition of 0.1 at% to 30 at% or less.

The effect of increasing the amount of change in magnetoresistance due to the above-mentioned additive element is not limited to pure Co, but Co-based alloy, that is, Co.
Was similarly observed in the alloy occupying 50 at% or more.

(Eighth Embodiment) A magnetoresistive film was produced using an alloy in which an additive element was added to Ni for the magnetization pinned layer and the magnetization free layer. The film structure is as follows.

Lower electrode / 5 nm Ta / 5 nm NiFeC
r / 15nmPtMn / 7nmNi _100-xM_x/ 7nmC
u / 7nmNi_100-xM_x/ 10 nm Ta / upper electrode (number
The value is the film thickness).

The film thickness of the magnetization free layer and the magnetization pinned layer is fixed to 7 nm, and the addition amount x of the additional element M is 0, 5 at% and 10 a.
t%, 15at%, 20at%, 30at%, 40at
% And changed.

The normalized resistance change amount with various addition elements and addition amounts was 1.3 times for Ti 5 at%, 1.5 times for Mn 2 at%, 1.2 times for Mn 2 at%, and 1.2 times for Zn 2 at%. , Ga2 at% was 1.5 times, Zr2 at% was 1.4 times, and Hf2 at% was 1.5 times, and it was found that these additive elements are effective in increasing the resistance change amount.
With any of the additive elements, the additive amount is 0.1 at% to 30 a
The effect is obtained at t% or less, and more preferably at 10 at% or less.

For Fe and Co, 5 at%
It has been confirmed that the following additions increase AΔR by 1.2 times and 1.1 times, respectively.

Similarly, as additive elements, Cr, V, Ta,
Nb, Sc, Cu, Y, Tc, Re, Ru, Rh, I
r, Pd, Pt, Ag, Au, B, Al, In, C, S
When i, Sn, Ca, Sr, and Ba are used, 0.5
An increase in the amount of change in magnetoresistance was observed with addition of at% to 30 at% or less.

(Ninth Embodiment) The effect of increasing the amount of change in magnetoresistance by the above-described additive element is not limited to pure Ni, but Ni
The same was found in the base alloy, that is, the alloy in which Ni accounts for 50 at% or more.

Ni ₈₀ Fe _{20 is used for the} magnetization pinned layer and the magnetization free layer.
Alternatively, a magnetoresistive film was produced using an alloy in which an additive element was added to Ni ₆₆ Fe ₁₆ Co ₁₈ . The film structure is as follows.

(I) Lower electrode / 5 nm Ta / 5 nm Ni
FeCr / 15nm PtMn / 7nm (Ni ₈₀ Fe ₂₀ )
_100-x M _x / 7nm Cu / 7nm (Ni ₈₀ Fe ₂₀ ) _100-x
M _x / 10 nm Ta / upper electrode (numerical value is film thickness).

(Ii) Lower electrode / 5 nm Ta / 5 nm Ni
FeCr / 15 nm PtMn / 7 nm (Ni ₆₆ Fe ₁₆ C
o ₁₈ ) _100-x M _x / 7 nm Cu / 7 nm (Ni ₆₆ Fe ₁₆ C
o ₁₈ ) _100-x M _x / 10 nm Ta / upper electrode (numbers are film thickness).

The film thicknesses of the magnetization free layer and the magnetization pinned layer are fixed to 7 nm, and the addition amount x of the additional element M is 0, 5 at%, 10 a.
t%, 15at%, 20at%, 30at%, 40at
% And changed.

In the case of the element having the film structure of (i), the normalized resistance change amount with various addition elements and addition amounts is 2.5 times without addition element, 3 times with Zn 5 at%, and Ti 2 at
%, 2.8 times, Mn2at%, 2.9 times, Cu2at%
4 times, Hf2 at% 4 times, Ga2 at% 4 times, G
e2at% tripled, and Zr2at% quadrupled.

In the case of the element having the film structure of (ii), the normalized resistance change amount with various addition elements and addition amounts is 3.5 times without the addition element, 4 times with Zn 5 at% and Ti 2 a
4 times t%, 4 times Mn2at%, 4 times Cu2at%
Double, Hf2at% 4.5 times, Ga2at% 4.5
Double, Ge 2 at% 3.9 times, Zr 2 at% 4 times.

Obviously, these additional elements were found to be effective in increasing the resistance change amount. 0.5 at% to 30 at%, more preferably 10 a
Effective at t% or less.

Similarly, as additive elements, Cr, V, Ta,
Nb, Sc, Y, Tc, Re, Ru, Rh, Ir, P
d, Pt, Ag, Au, B, Al, In, C, Si, S
Even when using n, Ca, Sr, or Ba, 0.1 at%
An increase in the amount of change in magnetoresistance was recognized with the addition of -30 at% or less.

In addition, in the fifth to ninth embodiments, as a method of adding the additive element, a minute amount of the additive element may be formed in the mother metal and then diffused, but it may be added to the target in advance. The better the controllability, the better the film quality such as crystallinity. Further, as the existence form of the additive element, the effect is large because the band structure of the alloy changes when it is solid-dissolved in the mother metal, but even if the additive element is precipitated from the mother phase, the mother phase and the precipitated phase are adjacent It is effective because the state changes in the part where you do. Further, it is effective if the concentration of the additive element is modulated.

[3] The results of examining the effect of increasing the resistance change amount based on the crystal structures of the magnetization fixed layer and the magnetization free layer will be described.

(Tenth Embodiment) An increase in the amount of change in magnetoresistance can be obtained even when the magnetization pinned layer and the magnetization free layer have a body-centered cubic structure (bcc structure).

The effect of increasing the amount of change in magnetoresistance due to the bcc structure was confirmed even when a magnetic substance other than the Fe--Co--Ni alloy was applied to the magnetization fixed layer and the magnetization free layer.

[4] A modified example of the above-mentioned embodiments [1], [2], and [3] will be described.

(Eleventh Embodiment) As shown in FIG.
Even in a top-type spin valve with an antiferromagnetic material arranged above, an effect of increasing the amount of change in magnetoresistance was recognized by appropriately adjusting the composition and crystal structure of the magnetization fixed layer and the magnetization free layer.

(Twelfth Embodiment) FIG. 12 shows a magnetoresistive effect element having a laminated ferri structure. The magnetoresistive effect element shown in FIG. 12 includes a lower electrode 11, an underlayer 12, and an antiferromagnetic layer 1.
3, magnetization pinned layer 21, antiparallel coupling layer 22, and magnetization pinned layer 2
The magnetization fixed layer 14, the non-magnetic intermediate layer 15, the magnetization free layer 24, the antiparallel coupling layer 25, and the magnetization free layer 26 of the three-layer structure of No. 1, the protection layer 17, and the upper electrode 18, Have. Even in the magnetoresistive effect element having such a laminated ferri structure, the effect of increasing the amount of change in magnetoresistance was recognized by appropriately adjusting the composition and crystal structure of the magnetization fixed layer and the magnetization free layer.

Further, only one of the magnetization pinned layer and the magnetization free layer may have a laminated ferri structure. In the following, a case where only the magnetization fixed layer has the laminated ferri structure will be considered. This magnetoresistive element is
The lower electrode 11, the underlayer 12, the antiferromagnetic layer 13, the magnetization pinned layer 21, the antiparallel coupling layer 22, the magnetization pinned layer 23, the nonmagnetic intermediate layer 15, the magnetization free layer 24, the protective layer 17, and the upper electrode 18.
Have. Specifically, the following magnetoresistive film was produced.

Sample A: Lower electrode / 5 nm Ta / 5 nm N
iFeCr / 15 nm PtMn / 7 nm (Fe _0.5 Co
_0.5 ) ₉₉ Cu ₁ / Ru ₁ nm / (Fe _0.5 Co _0.5 ) ₉₉ Cu
_{1 / 7nmCu / 7nm (Fe 0.5} Co 0.5) 99 Cu 1/1
0 nm Ta / upper electrode.

Sample B: Lower electrode / 5 nm Ta / 5 nm N
iFeCr / 15 nm PtMn / 7 nm Ni ₈₀ Fe ₂₀ /
_{Ru1nm / (Fe 0.5 Co 0.5)} 99 Cu 1 / 7nmCu
_{/ 7nm (Fe 0.5 Co 0.5)} 99 Cu 1 / 10nmTa /
Upper electrode.

Sample C: Lower electrode / 5 nm Ta / 5 nm N
iFeCr / 15 nm PtMn / 7 nm (Fe _0.5 Co
_0.5 ) ₉₉ Cu ₁ / Ru ₁ nm / (Fe _0.5 Co _0.5 ) ₉₉ Cu
_{1 / 7nmCu / 7nmCo 50 Fe 50} / 10nmTa /
Upper electrode.

Sample D: Lower electrode / 5 nm Ta / 5 nm N
iFeCr / 15 nm PtMn / 7 nm (Fe _0.5 Co
_0.5 ) ₉₉ Cu ₁ / Ru ₁ nm / (Fe _0.5 Co _0.5 ) ₉₉ Cu
_{1 / 7nmCu / 7nmCo 90 Fe 10} / 10nmTa /
Upper electrode.

Compared with the sample A, the sample B increased AΔR by about 1.4 times. Below, the cause is briefly considered. Among the laminated films forming the magnetoresistive effect element, the active portion that contributes to the magnetoresistive change is the magnetization free layer 24, the nonmagnetic intermediate layer 15, and the magnetization fixed layer 23 that is in contact with the nonmagnetic intermediate layer. Magnetization pinned layer 21 which is not in contact with the non-magnetic intermediate layer
Does not directly contribute to the amount of change in magnetoresistance when the magnetization free layer is inverted, and functions as a base for the active portion. Here, most of the magnetoresistive film has a face-centered cubic (111) orientation as a crystal structure. If a body-centered cubic crystal layer is added here, the crystallinity as a whole deteriorates, so it is desirable to minimize the body-centered cubic crystal portion. In Sample A, the magnetization pinned layer 21 as the underlayer was formed of a body-centered cubic (Fe _0.5 C
o _0.5 ) ₉₉ Cu ₁ and the crystallinity of the magnetoresistive film was poor, whereas in Sample B, the magnetization pinned layer 21 was replaced with face-centered cubic Ni ₈₀ Fe ₂₀ , so that the film quality was improved.
It is considered that AΔR increased.

Further, in the samples C and D, attention was paid to the coercive force of the magnetization free layer, and the materials of the magnetization free layer were changed and compared.
The magnetization free layer is required to have a small coercive force Hc in order to increase the sensitivity to the signal magnetic field from the magnetic recording medium. Here, it is known that the coercive force of face-centered cubic Co ₉₀ Fe ₁₀ is small and the coercive force of body-centered cubic Co ₅₀ Fe ₅₀ is large. In fact, the sample C using Co ₅₀ Fe ₅₀ for the magnetization free layer had a large value of Hc16Oe. Therefore, accepting the decrease in the amount of change in magnetoresistance in Sample D, Hc could be reduced to 7 Oe by using Co ₉₀ Fe ₁₀ in the magnetization free layer.

(Thirteenth Embodiment) FIG. 13 shows a dual structure magnetoresistive effect element. The magnetoresistive effect element shown in FIG. 13 has a lower electrode 11, an underlayer 12, and an antiferromagnetic layer 1.
3, magnetization pinned layer 14, nonmagnetic intermediate layer 15, magnetization free layer 1
6, second non-magnetic intermediate layer 15 ', second magnetization pinned layer 1
4 ′, a second antiferromagnetic layer 13 ′, a protective layer 17, and an upper electrode 18.

As described below, the standard magnetoresistive effect element shown in FIG. 1 and the dual structure magnetoresistive effect element shown in FIG. 13 were prepared and compared.

Standard: Lower electrode / 5 nm Ta / 5 nm Ni
_{FeCr / 15nmPtMn / 7nmCo 100-x} Fe x /
_{7nmCu / 7nmCo 100-x Fe x} / 10nmTa / upper electrode.

Dual: Lower electrode / 5 nm Ta / 5 nm
NiFeCr / 15nmPtMn / 7nmCo _100-x F
_{e x / 7nmCu / 7nmCo 100-} x Fe x / 7nmCu
_{/ 7nmCo 100-x Fe x /} 15nmPtMn / 10nm
Ta / upper electrode.

Even in the magnetoresistive effect element having such a laminated ferri structure, the effect of increasing the magnetoresistive change amount was recognized by appropriately adjusting the composition and crystal structure of the magnetization fixed layer and the magnetization free layer. Further, the magnetoresistive effect element having the laminated ferri structure showed a magnetoresistive change amount about three times that of the standard magnetoresistive effect element.

(Fourteenth Embodiment) FIG. 14 shows a magnetoresistive film in which the magnetization pinned layer and the magnetization free layer have a laminated structure of a ferromagnetic layer and a nonmagnetic layer (insertion layer). The magnetoresistive element shown in FIG. 14 has a magnetization fixed layer 14, a nonmagnetic intermediate layer 15, a strong magnetic layer 15, a strong magnetic layer 31, a nonmagnetic intermediate layer 15, a lower electrode 11, a base layer 12, an antiferromagnetic layer 13, a ferromagnetic layer 31, and a nonmagnetic layer 32. It is composed of a magnetization free layer 16, which is a laminated body of a magnetic layer 31 and a nonmagnetic layer 32, a protective layer 17, and an upper electrode 18. In the magnetization pinned layer and the magnetization free layer of this element, the ferromagnetic layer 31 is ferromagnetically coupled via the nonmagnetic layer 32.

Specifically, a magnetoresistive effect element having the following laminated structure was produced. Lower electrode / 5nmTa / 5n
mNiFeCr / 15nmPtMn / [1nmCo ₅₀ F
e ₅₀ / tnmCu] × 7 / 7nmCu / [1nmCo ₅₀
Fe ₅₀ / tnmCu] × 7/10 nmTa / upper electrode.

[1 nmCo ₅₀ Fe ₅₀ / tnmC]
u] × 7 is 1 nm Co ₅₀ Fe ₅₀ / tnm Cu / 1 nm
_{Co 50 Fe 50 / tnmCu / 1nmCo} 50 Fe 50 / tn
mCu / 1nmCo ₅₀ Fe ₅₀ / tnmCu / 1nmCo
₅₀ Fe ₅₀ / tnmCu / 1 nm Co ₅₀ Fe ₅₀ .

FIG. 19 shows the output when the thickness of the Cu layer is changed. From FIG. 19, the thickness of the Cu layer is 0.03 nm.
It can be seen that the effect is large at ˜1 nm.

According to the analysis result by EXAFS, Cu
When the layer thickness is in the above range, Cu is the surrounding Co _50.
It was found that the crystal structure was body-centered cubic rather than face-centered cubic because it was greatly affected by Fe ₅₀ . The magnetoresistive effect film in such a state can achieve higher AΔR than the uniform addition of Cu in the fifth embodiment. This is considered to be because the periodic modulation of the Cu concentration affects the band structure of the Co ₅₀ Fe ₅₀ alloy itself, and the difference in conduction between the majority spin and the minority spin is widened. However, in the analysis by n-EDX, in terms of measurement accuracy,
The composition appeared to be uniform.

When the thickness of the Cu layer is 1 nm,
Lower electrode / 5nmTa / 5nmNiFeCr / 15nm
_{PtMn / 7nmCo 50 Fe 50 / 7nmCu} / 7nmC
o ₅₀ Fe ₅₀ / 10nmTa / that the upper electrode showed magnetoresistance change of about 1.4 to 3 times as compared to the magnetoresistive element shown in FIG.

The above-mentioned effects are not limited to Co ₅₀ Fe ₅₀ , but Co-Fe binary alloy, Ni-Fe binary alloy, Ni-
It was similarly observed in any composition range of the Co binary alloy and the Fe-Co-Ni ternary alloy. In addition, Cr, V, Ta, Nb, Sc, Ti, Zn, Ga and G are added to the non-magnetic layer.
e, Zr, Hf, Y, Tc, Re, Rh, Ir, Pd,
Pt, Ag, Au, B, Al, In, C, Si, Sn,
The effect of increasing AΔR was obtained also when Ca, Sr, or Ba was used.

For example, in the magnetization pinned layer and the magnetization free layer,
(I) a sample using 7 nm of Ni ₆₆ Fe ₁₈ Co ₁₆ ;
(Ii) [1nmNi66Fe18Co16 / 0.2nmZr]
A sample using x7 was prepared.

Specifically, the former film structure is such that the lower electrode /
5 nm Ta / 5 nm NiFeCr / 15 nm PtMn /
7nm Ni66Fe18Co16 / 7nmCu / 7nmNi66
Fe18Co16 / 10 nmTa / upper electrode.

The latter film structure has a lower electrode of 5 nmTa /
5nmNiFeCr / 15nmPtMn / [1nmNi
66Fe18Co16 / 0.2nmZr] × 7 / 7nmCu /
[1nmNi66Fe18Co16 / 0.2nmZr] × 7 /
10 nm Ta / upper electrode.

Comparing the magnetoresistance change amount of these elements with the magnetoresistance effect element having the magnetization free layer and the magnetization pinned layer each formed of pure Co, the former is about 3.5 times and the latter is 6 times. there were.

Further, the magnetic resistance changes by changing the stacking period.
The amounts were compared. The film structure of the manufactured magnetoresistive film is as follows.
Part electrode / 5nmTa / 5nmNiFeCr / 15nmP
tMn / [tnmFe₅₀Co₅₀/0.1nmCu]×n
/ 7nmCu / [tnmFe ₅₀Co₅₀/0.1 nmC
u] × n / 10 nm Ta / upper electrode. And t
× n = 7nm fixed, n changed to 3, 5, 7, 10
Let

FIG. 22 shows the relationship between the number of laminations and the magnetoresistance change amount. From this, it was found that the smaller the number of laminations, the larger the amount of change in magnetoresistance. This tendency was confirmed not only in the case where the ferromagnetic material was Fe ₅₀ Co _50, but also in other binary or ternary alloy compositions having Fe, Co, and Ni as a matrix. Regarding the insertion layer, not only Cu but also Sc, T
i, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y,
Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
The effect was confirmed also in a.

Further, a magnetoresistive effect element having the following laminated structure was produced. (I) Lower electrode / 5 nm Ta / 5 nm NiFeCr / 1
5nmPtMn / [1nmNi ₈₀ Fe ₂₀ /0.1nm
M] × 7/7 nm Cu / [1 nm Ni ₈₀ Fe ₂₀ /0.1
nmM] × 7/10 nmTa / upper electrode.

(Ii) Lower electrode / 5 nm Ta / 5 nm Ni
FeCr / 15 nm PtMn / [1 nm Ni ₆₆ Fe ₁₆ C
o _{18 /} 0.1 nm M] × 7/7 nm Cu / [1 nm Ni
₆₆ Fe ₁₆ Co ₁₈ /0.1 nmM] × 7/10 nm Ta /
Upper electrode.

Here, for example, [1 nmNi₈₀Fe₂₀/
0.1 nm M] × 7 is 1 nm Ni ₈₀Fe₂₀/0.1n
mM / 1nm Ni₈₀Fe₂₀/0.1nmM/1nmNi
₈₀Fe₂₀/0.1nmM/1nmNi₈₀Fe₂₀/0.1
nmM / 1nmNi₈₀Fe₂₀/0.1 nmM / 1 nmN
i₈₀Fe₂₀Refers to.

In the case of the device having the film structure of (i), the normalized resistance change amount is 2.5 times without the insertion layer, 3.2 times with the Zn insertion layer, 3 times with the Ti insertion layer, and Mn insertion. 3.2 in layers
Double, Cu insertion layer 4.2 times, Hf insertion layer 4.5 times, G
It was 4.5 for the a insertion layer, 3.2 times for the Ge insertion layer, and 4.2 times for the Zr insertion layer.

In the case of the element having the film structure of (ii), the normalized resistance change amount is 3.5 times without the insertion layer, 4.1 times with the Zn insertion layer, 4.2 times with the Ti insertion layer, 3. With Mn insertion layer
2 times, Cu insertion layer 4.2 times, Hf insertion layer 5 times, Ga
The insertion layer was 5 times, the Ge insertion layer was 4 times, and the Zr insertion layer was 5 times.

Obviously, these insertion layers were effective in increasing the resistance change amount. The insertion layer made of any element is effective when the thickness is 0.03 nm to 1 nm, more preferably 0.5 nm or less.

Similarly, as the element M of the insertion layer, Cr, V,
Ta, Nb, Sc, Y, Tc, Re, Ru, Rh, I
r, Pd, Pt, Ag, Au, B, Al, In, C, S
Even when i, Sn, Ca, Sr, or Ba was used, an increase in the amount of change in magnetoresistance was observed at a thickness of 0.03 nm to 1 nm.

(Fifteenth Embodiment) FIG. 15 shows another magnetoresistive effect element. The magnetoresistive effect element shown in FIG.
The magnetic pinned layer 14, which is a laminated body of the lower electrode 11, the underlayer 12, the antiferromagnetic layer 13, the first ferromagnetic layer 33, and the second ferromagnetic layer 34, the nonmagnetic intermediate layer 15, and the first ferromagnetic layer. Layer 3
It is composed of a magnetization free layer 16, a protective layer 17, and an upper electrode 18, which are formed of a laminated body of the third ferromagnetic layer 34 and the second ferromagnetic layer 34.

Even in the magnetoresistive effect element having such a laminated structure, the effect of increasing the magnetoresistive change amount was recognized by appropriately adjusting the compositions and crystal structures of the ferromagnetic layers of the magnetization fixed layer and the magnetization free layer. .

(Sixteenth Embodiment) The compositions of the magnetization free layer and the magnetization pinned layer do not necessarily have to be the same. As described below, a magnetoresistive effect element in which the composition of the magnetization free layer and the magnetization fixed layer was changed was prepared and compared with the standard magnetoresistive effect element shown in FIG.

(A) Standard: Lower electrode / 5 nm Ta / 5 n
mNiFeCr / 15nmPtMn / 7nmCo _{100-x
Fe x / 7nmCu / 7nmCo 100-} x Fe x / 10nm
Ta / upper electrode.

(B) Change only in magnetization pinned layer: lower electrode / 5
nmTa / 5nm NiFeCr / 15nmPtMn / 7
_{nmFe 50 Co 50 / 7nmCu / 7nmCo} 100-x Fe x
/ 10 nm Ta / upper electrode.

(C) Change of both the magnetization free layer and the magnetization pinned layer
: Lower electrode / 5 nm Ta / 5 nm NiFeCr / 15
nmPtMn / 7nmFe₅₀Co₅₀/ 7nmCu / 7n
mFe ₅₀Co₅₀/ 10 nm Ta / upper electrode.

Regarding the amount of change in magnetic resistance, (B) is 1.
8 times, and (C) is 2.2 times that of (A). Although (B) is inferior to (C) in terms of the amount of change in magnetic resistance, since the soft magnetic characteristics are improved, Barkhausen noise of the magnetic head is suppressed and it is practically valuable. From this point of view, it is effective to individually optimize the film configurations of the magnetization fixed layer and the magnetization free layer.

Further, a magnetoresistive effect element having the following film structure was produced. Lower electrode / 5nmTa / 5nmNiFe
Cr / 15 nm PtMn / magnetization pinned layer / 7 nm Cu / magnetization free layer / 10 nm Ta / upper electrode. In these elements, the magnetization free layer and the magnetization pinned layer were changed as follows.

(D) Magnetization pinned layer: [1 nm Fe ₅₀ Co ₅₀
/0.1 nmCu] × 7, magnetization free layer: [1 nm Fe ₅₀ Co ₅₀ /0.1 nmCu]
× 7 (E) Magnetization pinned layer: [1 nm Fe ₅₀ Co ₅₀ /0.1 nm
Cu] × 7, magnetization free layer: [1 nm Ni ₆₆ Fe ₁₆ Co ₁₈ /0.1 nm
Zr] × 7 (F) Magnetization pinned layer: [1 nm Fe ₅₀ Co ₅₀ /0.1 nm
Cu] × 7, magnetization free layer: 1 nm Co ₉₀ Fe ₁₀ / [1 nm Ni ₆₆ Fe
₁₆ Co ₁₈ /0.1 nm Zr] × 6 (G) Magnetization pinned layer: [1 nm Fe ₅₀ Co ₅₀ /0.1 nm
Cu] × 7, magnetization free layer: [1 nm Ni ₈₀ Fe ₂₀ /0.1 nm Zr]
× 7 (H) Magnetization pinned layer: [1 nm Fe ₅₀ Co ₅₀ /0.1 nm
Cu] × 7, magnetization free layer: 1 nm Co ₉₀ Fe ₁₀ / [1 nm Ni ₈₀ Fe
_{20 /0.1nmZr]×6} (I) pinned _{layer: [1nmFe 33 Co 33 Ni 34} /0.
1 nm Cu] × 7, magnetization free layer: [1 nm Fe ₃₃ Co ₃₃ Ni ₃₄ /0.1 nm
Cu] × 7 (J) pinned _{layer: [1nmFe 33 Co 33 Ni 34} /0.
1 nm Cu] × 7, magnetization free layer: [1 nm Ni ₆₆ Fe ₁₆ Co ₁₈ /0.1 nm
Zr] × 7 (K) magnetization _{layer: [1nmFe 33 Co 33 Ni 34} /0.
1 nm Cu] × 7, magnetization free layer: 1 nm Co ₉₀ Fe ₁₀ / [1 nm Ni ₆₆ Fe
₁₆ Co _{18 /0.1nmZr]×6} (L) magnetization _{layer: [1nmFe 33 Co 33 Ni 34} /0.
1 nm Cu] × 7, magnetization free layer: [1 nm Ni ₈₀ Fe ₂₀ /0.1 nm Zr]
× 7 (M) magnetization _{layer: [1nmFe 33 Co 33 Ni 34} /0.
1 nm Cu] × 7, magnetization free layer: 1 nm Co ₉₀ Fe ₁₀ / [1 nm Ni ₈₀ Fe
_{20 /} 0.1 nm Zr] × 6.

The standardized magnetoresistance change amount is (D) 8 times,
(E) 6 times, (F) 7 times, (G) 7 times, (H) 7.6 times, (I) 6 times, (J) 5.5 times, (K) It was 5.8 times, (L) was 5 times, and (M) was 5.5 times.

From the above results, it is understood that the magnetoresistive change amount can be increased by the laminated structure even if the configurations of the magnetization fixed layer and the magnetization free layer are different. In the above device, 0.1 nm of Cu or Z is used as the insertion layer.
Although r is used, Cr, Nb, Ta, V, Sc, T
i, Mn, Zn, Ga, Ge, Zr, Hf, Y, Tc,
Re, Ru, Rh, Ir, Pd, Pt, Cu, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
It is also effective to use an insertion layer formed of an element selected from the group consisting of a, O, N and F. The thickness of the insertion layer is also 0.03 nm to 1 nm, preferably 0.5 nm.
The following are effective. Further, although the thickness of the magnetic layer is set to 1 nm in the above-mentioned element, changing the thickness of the magnetic layer from 0.5 nm to 3.5 nm was also effective. 3.5 nm
This indicates a structure in which one insertion layer is inserted in the 7 nm magnetic layer.

Further, a magnetoresistive effect element having the following film structure was produced. Lower electrode / 5nmTa / 5nmNiF
eCr / 15 nm PtMn / magnetization pinned layer / 7 nm Cu /
Magnetization free layer / 10 nm Ta / upper electrode. In these elements, the compositions of the magnetization free layer and the magnetization pinned layer were changed as follows.

(N) Magnetization pinned layer: 7 nm (Fe₅₀C
o₅₀)₉₈Cu₂, Magnetization free layer: 7 nm (Fe₅₀Co₅₀)₉₈Cu₂ (O) Magnetization pinned layer: 7 nm (Fe₅₀Co₅₀)₉₈Cu₂, Magnetization free layer: 7 nm (Ni₆₆Fe₁₆Co₁₈)₉₇Zr₃ (P) Magnetization pinned layer: 7 nm (Fe₅₀Co₅₀)₉₈Cu₂, Magnetization free layer: 1 nmCo₉₀Fe_Ten/ 6nm (Ni₆₆Fe
₁₆Co₁₈)₉₇Zr ₃ (Q) Magnetization pinned layer: 7 nm (Fe₅₀Co₅₀)₉₈Cu₂, Magnetization free layer: [1 nm Ni₈₀Fe₂₀/0.1nmCu]
× 7 (R) Magnetization pinned layer: 7 nm (Fe₅₀Co₅₀)₉₈Cu₂, Magnetization free layer: 1 nmCo₉₀Fe_Ten/ [1nmNi₈₀Fe
₂₀/0.1nmCu]×6 (S) Magnetization pinned layer: 7 nm (Fe₃₃Co₃₃Ni₃₄)₉₇C
u₃, Magnetization free layer: 7 nm (Fe₃₃Co₃₃Ni₃₄)₉₇Cu₃ (T) Magnetization pinned layer: 7 nm (Fe₃₃Co₃₃Ni₃₄)₉₇C
u₃, Magnetization free layer: 7 nm (Ni₆₆Fe₁₆Co₁₈)₉₇Zr₃ (U) Magnetization pinned layer: 7 nm (Fe₃₃Co₃₃Ni₃₄)₉₇C
u₃, Magnetization free layer: 1 nmCo₉₀Fe_Ten/ 6nm (Ni₆₆Fe
₁₆Co₁₈)₉₇Zr ₃ (V) Magnetization pinned layer: 7 nm (Fe₃₃Co₃₃Ni₃₄)₉₇C
u₃, Magnetization free layer: 7 nm (Ni₈₀Fe₂₀)₉₇Zr₃ (W) Magnetization pinned layer: 7 nm (Fe₃₃Co₃₃Ni₃₄)₉₇C
u₃, Magnetization free layer: 1 nmCo₉₀Fe_Ten/ 6nm (Ni₈₀Fe
₂₀)₉₇Zr₃.

The normalized magnetoresistive change amount is (N) 7 times,
(O) 6 times, (P) 6.5 times, (Q) 5.5 times,
(R) 6.3 times, (S) 6.5 times, (T) 5.8
It was 6 times for (U), 5 times for (V), and 5.5 times for (W).

From the above results, it is understood that even if the configurations of the magnetization fixed layer and the magnetization free layer are different, the amount of change in magnetoresistance can be increased by the composition or the laminated structure. In the above element, Cu or Z is added as an additive element.
Although r is used, Cr, Nb, Ta, V, Sc, T
i, Mn, Zn, Ga, Ge, Zr, Hf, Y, Tc,
Re, Ru, Rh, Ir, Pd, Pt, Cu, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
It is also effective to use an additive element selected from the group consisting of a, O, N and F. Further, the concentration of the additional element is 0.
1 atom% to 20 atom%, preferably 10 atom% or less is effective.

Next, a magnetic head assembly equipped with the magnetic head according to the present invention and a magnetic disk device equipped with this magnetic head assembly will be described.

FIG. 16A is a perspective view of a magnetic head assembly equipped with a CPP-MR head. The actuator arm 201 is provided with a hole for fixing to a fixed shaft in the magnetic disk device, and has a bobbin portion and the like for holding a drive coil (not shown). Actuator arm 2
The suspension 202 is fixed to one end of 01. A head slider 203 equipped with a CPP-MR head is attached to the tip of the suspension 202. Further, a lead wire 204 for writing and reading signals is laid on the suspension 202, and one end of the lead wire 204 is connected to each electrode of the CPP-MR head incorporated in the head slider 203, and the lead wire 2 is provided.
The other end of 04 is connected to the electrode pad 205.

FIG. 16B is a perspective view showing the internal structure of a magnetic disk device equipped with the magnetic head assembly shown in FIG. 16A. The magnetic disk 211 is mounted on the spindle 212 and rotated by a motor (not shown) in response to a control signal from a drive device controller (not shown). The actuator arm 201 is fixed to the fixed shaft 213,
The suspension 202 and the head slider 203 at its tip are supported. When the magnetic disk 211 rotates, the medium facing surface of the head slider 203 is held in a state of being floated above the surface of the magnetic disk 211 by a predetermined amount, and information is recorded / reproduced. At the base end of the actuator arm 201, there is a voice coil motor 21 which is a kind of linear motor.
4 are provided. The voice coil motor 214 is composed of a drive coil (not shown) wound around the bobbin of the actuator arm 201, and a magnetic circuit including a permanent magnet and an opposing yoke that are arranged so as to face each other so as to sandwich the coil. The actuator arm 201 is held by ball bearings (not shown) provided above and below the fixed shaft 213.
A rotary slide 14 is provided.

Furthermore, the magnetoresistive effect element according to the present invention can be applied to a magnetoresistive effect memory (MRAM).

[0161]

As described above in detail, according to the present invention, in the perpendicularly-energized magnetoresistive element having the spin valve structure, the resistance value of the portion involved in spin-dependent conduction can be increased, and the resistance change amount can be increased. it can.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a perpendicularly flowing magnetoresistive effect element according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a perpendicular current-carrying magnetoresistive effect element according to another embodiment of the present invention.

FIG. 3 is a cross-sectional view of a perpendicular current-carrying magnetoresistive effect element according to another embodiment of the present invention.

FIG. 4 is a cross-sectional view of a perpendicularly flowing magnetoresistive effect element according to another embodiment of the present invention.

FIG. 5 is a diagram showing the electrical resistance of each part of the perpendicularly-energized magnetoresistive effect element.

FIG. 6 is a diagram showing the Fe concentration dependence of the amount of change in magnetoresistance when a Co—Fe alloy is used in the perpendicularly flowing magnetoresistive effect element according to the sixth embodiment of the present invention.

FIG. 7 is a diagram showing the Ni concentration dependence of the amount of change in magnetoresistance when a Ni—Fe alloy is used in the perpendicularly flowing magnetoresistive effect element according to the second embodiment of the present invention.

FIG. 8 is a diagram showing the Co concentration dependence of the magnetoresistance change amount when a Ni—Co alloy is used in the perpendicularly flowing magnetoresistive effect element according to the third embodiment of the present invention.

FIG. 9 is a diagram showing the measurement points of the amount of change in magnetoresistance when a Fe—Co—Ni ternary alloy is used in the perpendicularly flowing magnetoresistive effect element according to the fourth embodiment of the present invention.

10 is a diagram showing the relationship between the alloy composition shown in FIG. 9 and the amount of change in magnetoresistance.

FIG. 11 is a diagram showing the Cu concentration dependence of the magnetoresistance change amount when an alloy in which Cu is added to Co ₅₀ Fe ₅₀ is used for the perpendicularly flowing magnetoresistive effect element according to the fifth embodiment of the present invention.

FIG. 12 is a cross-sectional view of a perpendicularly flowing magnetoresistive effect element according to a twelfth embodiment of the present invention.

FIG. 13 is a cross-sectional view of a perpendicularly flowing magnetoresistive effect element according to a thirteenth embodiment of the present invention.

FIG. 14 is a cross-sectional view of a perpendicularly flowing magnetoresistive effect element according to a fourteenth embodiment of the present invention.

FIG. 15 is a cross-sectional view of a perpendicularly flowing magnetoresistive effect element according to a fifteenth embodiment of the present invention.

FIG. 16 is a perspective view of a magnetic head assembly according to an embodiment of the present invention and a perspective view showing an internal structure of a magnetic disk device.

FIG. 17 is a cross-sectional view showing a specific structure of a perpendicular current-carrying magnetoresistive effect element according to an embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a specific structure of a perpendicular current-carrying magnetoresistive effect element according to another embodiment of the present invention.

[19] The magnetization pinned layer and the magnetization free layer of the perpendicular through the electromagnetic-resistive element according to a fourteenth embodiment of the present invention Co ₅₀
Shows the Cu film thickness dependency of magnetoresistance change in the case of a laminated structure of the Fe ₅₀ layer and Cu layer.

FIG. 20 is a phase diagram showing a composition region of a Fe—Co—Ni alloy forming a body-centered cubic crystal.

FIG. 21 is a phase diagram showing a composition region of a Co—Mn—Fe alloy forming a body-centered cubic crystal.

FIG. 22 is a diagram showing the relationship between the number of times of lamination of a ferromagnetic layer and a nonmagnetic layer forming the magnetization fixed layer and the magnetization free layer of the perpendicularly flowing magnetoresistive effect element according to the fourteenth embodiment of the present invention, and the amount of change in magnetoresistance. FIG.

[Explanation of symbols]

11 ... Lower electrode 12 ... Underlayer 13 ... Antiferromagnetic layer 14 ... Magnetization pinned layer 15 ... Nonmagnetic intermediate layer 16 ... Magnetization free layer 17 ... Protective layer 18 ... Upper electrode 21 ... Magnetization pinned layer 22 ... Nonmagnetic layer 23 ... Magnetization pinned layer 24 ... Magnetization free layer 25 ... Nonmagnetic layer 26 ... Magnetization free layer 31 ... Ferromagnetic layer 32 ... Nonmagnetic layer 33 ... First ferromagnetic layer 34 ... Second ferromagnetic layer 51 ... Si substrate 52 ... AlO _x 53 ... lower electrode 54 ... spin valve film 55 ... hard film 56 ... SiO _x 57 ... upper electrode 58 ... Au film 201 ... actuator arm 202 ... suspension 203 ... head slider 204 ... lead 205 ... electrode pad 211 ... magnetic disk 212 ... Spindle 213 ... Fixed shaft 214 ... Voice coil motor

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 43/10 G01R 33/06 R (72) Inventor Hitoshi Iwasaki 1 Komukai Toshiba-cho, Kawasaki City, Kanagawa Address Stock Company Toshiba Research & Development Center (72) Inventor Yuzo Kamiguchi 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki City, Kanagawa Prefecture Stock Company Toshiba Research & Development Center (72) Inventor Masaji Sahashi Kawasaki, Kanagawa Prefecture Komukai Toshiba Town No. 1 F-term in Toshiba Research and Development Center, a stock company (reference) 2G017 AA10 AD55 5D034 BA03 BA05 BA08 CA04 5E049 AA01 AA04 AA07 AC00 AC05 BA06 BA12 CB02 DB12

Claims (24)

[Claims] 1. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes according to an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially represented by the general formula (1) or (2) T1 _a T2 _b (1) Fe _c Co _d Ni _e (2) (where T1 and T2 are Fe, 25, which are different elements selected from the group consisting of Co and Ni,
at% ≦ a ≦ 75 at%, 25 at% ≦ b ≦ 75 at
%, A + b = 100, 0 <c ≦ 75 at%, 0 <d ≦ 7
5 at%, 0 <e ≦ 63 at%, c + d + e = 100) A magnetoresistive effect element formed of a binary alloy or a ternary alloy. 2. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially the following general formula (3) or (4) (T1 _{a / 100} T2 _{b / 100} ) _100-x M1 _{x (3)} (T1 _{c / 100} T2 _{d / 100} T3 _{e / 100} ) _100-x M1 _x (4) (where T1, T2 and T3 are different elements selected from the group consisting of Fe, Co and Ni, and M1 is Cr, V or Ta. , Nb, Sc, Ti, Mn,
Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc, R
e, Ru, Rh, Ir, Pd, Pt, Ag, Au, B,
Al, In, C, Si, Sn, Ca, Sr, Ba, O,
At least one element selected from the group consisting of N and F, and 25 at% ≦ a ≦ 75 at%, 25 at%
≦ b ≦ 75 at%, a + b = 100, 5 at% ≦ c ≦ 9
0 at%, 5 at% ≤ d ≤ 90 at%, 5 at% ≤ e ≤
90 at%, c + d + e = 100, 0.1 at% ≦ x ≦
30 at%) formed of an alloy. 3. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes in accordance with an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially represented by the general formula (5) Fe _100-a T1 _a (5) (where T1 is Co, Cr, V, Ni, Rh, Ti,
At least one element selected from the group consisting of Mo, W, Nb, Ta, Pd, Pt, Zr and Hf,
A magnetoresistive effect element formed of an alloy represented by 0 at% ≦ a <70 at%) and having a crystal structure of body-centered cubic. 4. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes according to an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially represented by the general formula (6) Fe _100-a T1 _a (6) (where T1 is Co, 0 at% ≤ a ≤ 80 at
%, When T1 is Cr, 0 at% ≦ a ≦ 80 at%, T1
When V is 0 at% ≤ a ≤ 70 at%, when T1 is Ni 0 at% ≤ a ≤ 20 at%, when T1 is Rh 0 at%
% ≤ a ≤ 55 at%, when T1 is Ti 0 at% ≤ a ≤
51 at%), and the crystal structure thereof is a body-centered cubic crystal. 5. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes according to an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is Fe-
Co-Ni alloy, Co-Mn-Fe alloy and Fe-C
A magnetoresistive effect element formed of a ternary alloy selected from the group consisting of r-Co alloys, and having a crystal structure of body-centered cubic. 6. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes according to an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially represented by the general formulas (7) to (10) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (7) (Fe-Co- Ni) _{100-x Mx (8)} (Co-Mn-Fe) _{100-x Mx (9)} (Fe-Cr-Co) _{100-x Mx (10)} (where T1 is Co, Cr, V, Ni, Rh, Ti,
At least one element selected from the group consisting of Mo, W, Nb, Ta, Pd, Pt, Zr and Hf,
0 at% ≤ a <70 at%, Fe-Co-Ni is a body-centered cubic composition range, Co-Mn-Fe is a body-centered cubic composition range, Fe-Cr-Co is a body-centered cubic composition range, M is M
When at least one element selected from the group consisting of n, Cu, Re, Ru, Pd, Pt, Ag, Au, and Al is 0.1 at% ≦ x ≦ 20 at%, M is Sc, Z
n, Ga, Ge, Zr, Hf, Y, Tc, B, In,
When it is at least one element selected from the group consisting of C, Si, Sn, Ca, Sr, Ba, O, F and N, 0.1 at% ≤ x ≤ 10 at%). And a magnetoresistive effect element having a crystal structure of body-centered cubic. 7. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially represented by the general formula (11) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (11) (where T1 is Co. , 0 at% ≤ a ≤ 80 at
%, When T1 is Cr, 0 at% ≦ a ≦ 80 at%, T
When 1 is V, 0 at% ≦ a ≦ 70 at% and T1 is Ni
0 at% ≦ a ≦ 10 at%, T1 is Rh, 0 at% ≦ a ≦ 55 at%, and T1 is Ti, 0
at% ≦ a ≦ 51 at%, M is Mn, Cu, Re, R
0.1a when at least one element selected from the group consisting of u, Pd, Pt, Ag, Au and Al
t% ≦ x ≦ 20 at%, M is Sc, Zn, Ga, Ge,
Zr, Hf, Y, Tc, B, In, C, Si, Sn, C
When it is at least one element selected from the group consisting of a, Sr, Ba, O, F and N, 0.1 at% ≦
x ≦ 10 at%), and a magnetoresistive effect element having a crystal structure of body-centered cubic. 8. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes according to an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (12) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (12) (where T1 is Co, Ni Of at least one element, 0 at% ≦ a ≦ 50 at%, M is Sc, T
i, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y,
Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
a, O, N and F, which is at least one element selected from the group consisting of 0.1 at% ≤ x ≤ 30 at%) and is formed from an alloy represented by element. 9. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes in accordance with an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially represented by the general formula (13) (Fe _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (13) (where T1 is Co, Ni 0 at% ≤ a ≤ 50 at% of at least one element, M is at least one element selected from the group consisting of Cu, Zn and Ga, and is represented by 0.1 at% ≤ x ≤ 30 at%). A magnetoresistive effect element characterized by being formed from an alloy. 10. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes in accordance with an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially represented by the general formula (14) Fe _100-x M _x (14) (where M is at least one element selected from the group consisting of Ni and Co). Yes, 0.1 at% ≤ x ≤ 5 at
%) A magnetoresistive effect element characterized by being formed from an alloy represented by. 11. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (15) (Co _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (15) (where T1 is Fe, Ni Of at least one element, 0 at% ≦ a ≦ 50 at%, M is Cr, V,
Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, G
e, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir,
Pd, Pt, Ag, Au, B, Al, In, C, Si,
At least one element selected from the group consisting of Sn, Ca, Sr, Ba, O, N and F, and 0.1 at
% ≦ x ≦ 30 at%), which is formed of an alloy. 12. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (16) (Co _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (16) (where T1 is Fe, Ni Of at least one element, 0 at% ≦ a ≦ 50 at%, M is Sc, T
At least one element selected from the group consisting of i, Mn, Cu, and Hf, and 0.1 at% ≦ x ≦ 30a
A magnetoresistive effect element formed of an alloy represented by: 13. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially represented by the general formula (17) Co _100-x M _x (17) (wherein M is at least one element selected from the group consisting of Fe and Ni). Yes, 0.1 at% ≤ x ≤ 5 at
%) A magnetoresistive effect element characterized by being formed from an alloy represented by. 14. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (18) (Ni _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (18) (where T1 is Co, Fe Of at least one element, 0 at% ≦ a ≦ 50 at%, M is Cr, V,
Ta, Nb, Sc, Ti, Mn, Cu, Zn, Ga, G
e, Zr, Hf, Y, Tc, Re, Ru, Rh, Ir,
Pd, Pt, Ag, Au, B, Al, In, C, Si,
At least one element selected from the group consisting of Sn, Ca, Sr, Ba, O, N and F, and 0.1 at
% ≦ x ≦ 30 at%) formed from an alloy. 15. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (19) (Ni _{(100-a) / 100} T1 _{a / 100} ) _100-x M _x (19) (where T1 is Fe, Co Of at least one element, 0 at% ≦ a ≦ 50 at%, M is Sc, T
at least one element selected from the group consisting of i, Mn, Zn, Ga, Ge, Zr and Hf, and 0.1
At% ≦ x ≦ 30 at%), a magnetoresistive effect element formed of an alloy represented by the following formula. 16. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially represented by the general formula (20) Ni _100-x M _x (20) (where M is at least one element selected from the group consisting of Fe and Co). Yes, 0.1 at% ≦ x ≦ 5
At%) is formed of an alloy. 17. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (21-a) or (21-b) (T1 _a T2 _b ) _100-x M _x (21-a) (Fe _c Co _d Ni _d. ) _100-x M _x (21-b) (wherein T1, T2 and T3 are different elements selected from the group consisting of Fe, Co and Ni, and 25 at% ≤ a ≤ 75 at%, 25 at% ≤b≤7
5 at%, a + b = 100, 0 <c ≦ 75 at%, 0 <
d ≦ 75 at%, 0 <e ≦ 63 at%, c + d + e = 1
00, and M is Cr, V, Ta, Nb, Sc, Ti, M
n, Cu, Zn, Ga, Ge, Zr, Hf, Y, Tc,
Re, Ru, Rh, Ir, Pd, Pt, Ag, Au,
B, Al, In, C, Si, Sn, Ca, Sr, Ba,
At least one selected from the group consisting of O, N and F
A magnetoresistive effect element, which is a binary element or a ternary alloy represented by 0.1 atomic% ≤ x ≤ 20 atomic%. 18. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially (i) a general formula (22-a) or (22-b) T1 _a T2 _b (22-a) Fe _c Co _d Ni _c (22-b). (Here, T1, T2, and T3 are different elements selected from the group consisting of Fe, Co, and Ni, and are 25 at% ≤ a ≤ 75 at% and 25 at% ≤ b ≤ 7).
5 at%, a + b = 100, 0 <c ≦ 75 at%, 0 <
d ≦ 75 at%, 0 <e ≦ 63 at%, c + d + e = 1
00) and one or more layers formed of a binary or ternary alloy, and (ii) Cr, V, Ta, Nb, Sc, T
i, Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y,
Tc, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of a, O, N and F
2. A magnetoresistive effect element having a structure in which one or more layers of the above are alternately laminated. 19. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes according to an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one of the magnetization free layers is substantially of the general formula (23) or (24) (Ni _a Fe _b Co _c ) _100-x M _x (23) (Ni _d Fe _100-d ) _100-x M _x (24) (where, <a ≦ 75 atomic%, 0 <b ≦ 75 atomic%, 0
<C ≦ 75 atomic%, a + b + c = 100 atomic%, 75 atomic% ≦ d ≦ 85 atomic%, and M is Cr, V, Ta, N
b, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Z
r, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd,
Pt, Ag, Au, B, Al, In, C, Si, Sn,
At least one element selected from the group consisting of Ca, Sr, Ba, O, N and F, and 0.1 atomic% ≤ x
A magnetoresistive effect element formed of an alloy represented by ≦ 20 atomic%). 20. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer And at least one layer of the magnetization free layer is substantially (i) a general formula (25) or (26) Ni _a Fe _b Co _c (25) Ni _d Fe _100-d (26) (where 0 <A ≦ 75 atomic%, 0 <b ≦ 75 atomic%,
0 <c ≦ 75 atom%, a + b + c = 100 atom%, 75
One or more layers formed of an alloy represented by: atomic% ≤ d ≤ 85 atomic%, (ii)
Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Z
n, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru,
Rh, Ir, Pd, Pt, Ag, Au, B, Al, I
one or more layers having a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of n, C, Si, Sn, Ca, Sr, Ba, O, N and F. A magnetoresistive effect element having a structure in which layers are alternately laminated. 21. A magnetization pinned layer whose magnetization direction is pinned substantially in one direction, a magnetization free layer whose magnetization direction changes in accordance with an external magnetic field, and said magnetization pinned layer and said magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer Is substantially represented by the general formula (27) or (28) (Fe _a Co _b Ni _c ) _x M _100-x (27) (Fe _d Co _100-d ) _x M _100-x (28) (where 0 <A ≦ 75 atomic%, 0 <b ≦ 75 atomic%,
0 <c ≦ 75 atomic%, a + b + c = 100 atomic%, 45
Atomic% ≤ d ≤ 55 atomic%, and M is Cr, V, Ta, N
b, Sc, Ti, Mn, Cu, Zn, Ga, Ge, Z
r, Hf, Y, Tc, Re, Ru, Rh, Ir, Pd,
Pt, Ag, Au, B, Al, In, C, Si, Sn,
It is at least one element selected from the group consisting of Ca, Sr, Ba, O, N and F, and is formed from an alloy represented by 0.1 atomic% ≤ x ≤ 20 atomic%), and the magnetization free layer substantially formula (29) or _{(30) (Ni e Fe f} Co g) x M 100-x (29) (Ni h Fe 100-h) x M 100-x (30) ( wherein, 60 atom% ≦ e ≦ 75 atom%, 12.5 atom% ≦ f ≦ 20 atom%, 12.5 atom% ≦ g ≦ 20 atom%, e + f + g = 100 atom%, 75 atom% ≦ h ≦ 85
Atomic% and M is Cr, V, Ta, Nb, Sc, Ti,
Mn, Cu, Zn, Ga, Ge, Zr, Hf, Y, T
c, Re, Ru, Rh, Ir, Pd, Pt, Ag, A
u, B, Al, In, C, Si, Sn, Ca, Sr, B
a, O, N, and F, which is at least one element selected from the group consisting of a, O, N, and F, and is formed from an alloy represented by 0.1 atomic% ≤ x ≤ 20 atomic%) Resistance effect element. 22. A magnetization pinned layer in which the magnetization direction is pinned substantially in one direction, a magnetization free layer in which the magnetization direction changes according to an external magnetic field, and the magnetization pinned layer and the magnetization free layer. A non-magnetic intermediate layer formed therebetween; and an electrode for passing a sense current substantially perpendicular to the film surfaces of the magnetization pinned layer, the non-magnetic intermediate layer and the magnetization free layer, the magnetization pinned layer There essentially, (i) the general formula (31) or _{(32) Fe a Co b Ni} c (31) Fe d Co 100-d (32) ( where, 0 <a ≦ 75 atomic%, 0 <b ≤75 atom%,
0 <c ≦ 75 atomic%, a + b + c = 100 atomic%, 45
One or more layers formed from an alloy represented by: atomic% ≤ d ≤ 55 atomic%, (ii)
Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Z
n, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru,
Rh, Ir, Pd, Pt, Ag, Au, B, Al, I
one or more layers having a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of n, C, Si, Sn, Ca, Sr, Ba, O, N and F. has a laminate structure alternately, the magnetization free layer ferromagnetic layer are substantially, (i) the general formula (33) or _{(34) Ni e Fe f Co} g (33) Ni h Fe 100-h (34 ) (Where, 60 atomic% ≤ e ≤ 75 atomic%, 12.5 atomic% ≤ f ≤ 20 atomic%, 12.5 atomic% ≤ g ≤ 20 atomic%, e + f + g = 100 atomic%, 75 atomic% ≤ h ≦ 85
One or more layers formed from an alloy represented by (atomic%), (ii)
Cr, V, Ta, Nb, Sc, Ti, Mn, Cu, Z
n, Ga, Ge, Zr, Hf, Y, Tc, Re, Ru,
Rh, Ir, Pd, Pt, Ag, Au, B, Al, I
one or more layers having a thickness of 0.03 nm to 1 nm formed of at least one element selected from the group consisting of n, C, Si, Sn, Ca, Sr, Ba, O, N and F. A magnetoresistive effect element having a structure in which layers are alternately laminated. 23. A magnetic head comprising the magnetoresistive effect element according to claim 1. Description: 24. A magnetic recording / reproducing apparatus comprising a magnetic recording medium and the magnetoresistive effect element according to claim 1. Description: