JP2003280551A - Image display device - Google Patents

Image display device

Info

Publication number
JP2003280551A
JP2003280551A JP2002080540A JP2002080540A JP2003280551A JP 2003280551 A JP2003280551 A JP 2003280551A JP 2002080540 A JP2002080540 A JP 2002080540A JP 2002080540 A JP2002080540 A JP 2002080540A JP 2003280551 A JP2003280551 A JP 2003280551A
Authority
JP
Japan
Prior art keywords
light emitting
power supply
display device
emitting element
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002080540A
Other languages
Japanese (ja)
Inventor
Hisao Tanabe
尚雄 田辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2002080540A priority Critical patent/JP2003280551A/en
Priority to DE10392143T priority patent/DE10392143T5/en
Priority to US10/476,340 priority patent/US7106282B2/en
Priority to CNA038007789A priority patent/CN1543635A/en
Priority to PCT/JP2003/003351 priority patent/WO2003081564A1/en
Priority to AU2003221436A priority patent/AU2003221436A1/en
Priority to TW92106195A priority patent/TW573439B/en
Publication of JP2003280551A publication Critical patent/JP2003280551A/en
Priority to US11/353,902 priority patent/US20060132009A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals

Abstract

<P>PROBLEM TO BE SOLVED: To supply current to an electric field light emitting element without lowering an opening ratio of a pixel. <P>SOLUTION: In an image display device in which light emitting elements 5 and transistors for driving the light emitting elements 8 are formed on the same substrate 1 and which has a plurality of display cells each of which has structure in which the light emitting element 5 and the driving transistor 8 are connected between a power source supplying line and a ground line and which displays the image by selectively driving the driving transistors 8, power source supplying pillars 21 for supplying currents to respective display cells are formed on a common electrode for power source 20 which is formed on the surface of the counter substrate 13 parallel to the substrate 1. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は有機電界発光素子等
の電流駆動型の発光素子を用いた画像表示装置に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device using a current driving type light emitting element such as an organic electroluminescent element.

【0002】[0002]

【従来の技術】図2は有機電界発光素子を用いた画像表
示装置の例を示す図で、図2(a)は断面図、図2
(b)は上面図である。ガラス基板1に層間絶縁層2、
3が積層され、その上に各発光エリアを規定する透明導
電膜からなる陽極4、全面に有機発光層5、陰極6が形
成されている。また、ガラス基板1には、電源供給線7
を通して電流供給される電流駆動用薄膜トランジスタ
8、トランジスタ8をON/OFF制御するためのトラ
ンジスタ9、発光させる表示セルを選択する縦電極1
0、横電極11が形成されている。縦電極10、横電極
11は層間絶縁層2で絶縁され、各トランジスタは層間
絶縁層3で保護されると共に、トランジスタ上の面が平
滑化され、電流駆動用薄膜トランジスタ8と陽極4とは
層間絶縁層3のスルーホールを通して接続されている。
また、陰極6全体を覆うように対向封止板12が画像装
置の密封用として設けられている。
2. Description of the Related Art FIG. 2 is a diagram showing an example of an image display device using an organic electroluminescent device, FIG. 2 (a) is a sectional view, and FIG.
(B) is a top view. Interlayer insulation layer 2 on glass substrate 1,
3 are laminated, and an anode 4 made of a transparent conductive film that defines each light emitting area, an organic light emitting layer 5, and a cathode 6 are formed on the entire surface. In addition, a power supply line 7 is provided on the glass substrate 1.
A current driving thin film transistor 8 supplied with current through the transistor 8, a transistor 9 for controlling ON / OFF of the transistor 8, and a vertical electrode 1 for selecting a display cell to emit light.
0, lateral electrodes 11 are formed. The vertical electrode 10 and the horizontal electrode 11 are insulated by the interlayer insulating layer 2, each transistor is protected by the interlayer insulating layer 3, and the surface on the transistor is smoothed so that the current driving thin film transistor 8 and the anode 4 are insulated from each other. Connected through layer 3 through holes.
Further, a counter sealing plate 12 is provided for sealing the image device so as to cover the entire cathode 6.

【0003】このような構造の画像表示装置において
は、縦電極10、横電極11で選択された表示セルのト
ランジスタ9がONすると、電流駆動用薄膜トランジス
タ8が導通し、電源供給線7を通して陽極4、有機発光
層5、陰極6を通して電流が流れ、選択されたセルが発
光する。この発光状態はトランジスタ9に対してOFF
用の信号が加えられるまで継続する。こうしてマトリッ
クス状に配置された各発光セルをトランジスタで選択駆
動することにより画像表示が行われる。
In the image display device having such a structure, when the transistor 9 of the display cell selected by the vertical electrode 10 and the horizontal electrode 11 is turned on, the current driving thin film transistor 8 becomes conductive and the anode 4 is supplied through the power supply line 7. A current flows through the organic light emitting layer 5 and the cathode 6, and the selected cell emits light. This light emission state is OFF for the transistor 9.
Until the signal for is added. An image is displayed by selectively driving each light emitting cell arranged in a matrix in this way with a transistor.

【0004】[0004]

【発明が解決しようとする課題】ところで、有機電界発
光素子等の電流駆動型発光素子は電流を流すことにより
発光するため、発光状態を保持するためには電流を流し
続ける必要がある。このため、電流駆動型発光素子をア
クティブマトリックス駆動するためには、電流を流し続
けるための素子と、この素子を制御するための素子の少
なくとも合計2つのアクティブ素子が必要となる。ま
た、電流を流し続けるためには専用の電流供給線が必要
である。
By the way, a current-driven light-emitting element such as an organic electroluminescence element emits light when a current is passed through it. Therefore, it is necessary to keep the current flowing in order to maintain the light-emitting state. Therefore, in order to perform active matrix driving of the current-driven light emitting device, at least two active devices in total, that is, a device for keeping current flowing and a device for controlling this device, are required. In addition, a dedicated current supply line is required to keep the current flowing.

【0005】図2に示したように、発光素子は電流駆動
用トランジスタ8に接続され、共通の電源供給線7と共
通の接地線(陰極)間に接続されることになる。そして
1つの発光素子にはトランジスタが少なくとも2つ必要
で、配線は発光素子を選択するためのデータ線と走査線
(桁電極と横電極)、電源供給線、接地線の4電極が必
要となるため、複雑な構造となる。特に、電源供給線は
表示画素数が増えると、電流供給能力を高める必要があ
るため、低抵抗とする必要があり、低抵抗化するため線
幅を大きくすると画素の開口率が低下してしまうという
問題がある。
As shown in FIG. 2, the light emitting element is connected to the current driving transistor 8 and is connected between the common power supply line 7 and the common ground line (cathode). One light emitting element requires at least two transistors, and the wiring requires four electrodes of a data line and a scanning line (digit electrode and horizontal electrode) for selecting the light emitting element, a power supply line, and a ground line. Therefore, it has a complicated structure. In particular, when the number of display pixels increases, the power supply line needs to have a low resistance because the current supply capability needs to be increased, and if the line width is increased to reduce the resistance, the aperture ratio of the pixel decreases. There is a problem.

【0006】[0006]

【課題を解決するための手段】本発明は上記課題を解決
しようとするもので、画素の開口率を下げることなく、
電界発光素子の電流を供給可能にすることを目的として
いる。そのために請求項1の発明は、発光素子と、該発
光素子駆動用トランジスタとを同一基板上に形成し、発
光素子と駆動用トランジスタとを電源供給線と接地線間
に接続した構造の複数の表示セルを有し、駆動用トラン
ジスタを選択的に駆動して表示する画像表示装置におい
て、前記基板と平行な対向基板面に形成された電源用共
通電極に、各表示セルへ電流を供給するための電源供給
電極柱を形成したことを特徴とする。請求項2の発明
は、電源供給電極柱が発光素子上に形成された陰極の一
部に形成した切り欠き部に設けられた電源供給パッドに
接続され、該パッドを通して動用トランジスタに接続さ
れることを特徴とする。
DISCLOSURE OF THE INVENTION The present invention is intended to solve the above-mentioned problems, and it is possible to reduce the aperture ratio of pixels without lowering the aperture ratio.
The purpose is to make it possible to supply a current to the electroluminescent device. Therefore, the invention according to claim 1 has a plurality of light emitting elements and a transistor for driving the light emitting element formed on the same substrate, and the light emitting element and the driving transistor are connected between a power supply line and a ground line. In an image display device having a display cell and selectively driving a driving transistor to display, in order to supply a current to each display cell to a common electrode for power supply formed on a counter substrate surface parallel to the substrate. The power supply electrode column of is formed. According to a second aspect of the present invention, the power supply electrode column is connected to a power supply pad provided in a notch formed in a part of the cathode formed on the light emitting element, and is connected to the driving transistor through the pad. Is characterized by.

【0007】[0007]

【発明の実施の形態】以下、本発明の実施の形態を図面
を参照しつつ説明する。図1は本発明の画像表示装置の
例を説明する図で、図1(a)は断面図、図1(b)は
上面図である。なお、図2と同一番号は同一内容を示し
ているので、その詳細な説明は省略する。ガラス基板1
に層間絶縁層2、3、透明導電膜からなる陽極4、有機
発光層5、陰極6を形成し、さらにガラス基板1に形成
した電流駆動用薄膜トランジスタ8を通して陽極4に電
流を供給する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1A and 1B are diagrams illustrating an example of an image display device of the present invention, FIG. 1A is a cross-sectional view, and FIG. 1B is a top view. Note that the same numbers as those in FIG. 2 indicate the same contents, and thus detailed description thereof will be omitted. Glass substrate 1
An interlayer insulating layers 2 and 3, an anode 4 made of a transparent conductive film, an organic light emitting layer 5 and a cathode 6 are formed on the substrate, and a current is supplied to the anode 4 through a current driving thin film transistor 8 formed on the glass substrate 1.

【0008】本実施形態においては、ガラス基板1に対
向して配置される対向基板13(図2の対向封止板12
に相当)の陰極6との対向面全面に、電源用共通電極2
0を形成し、この共通電極20に各表示セルの電流駆動
用薄膜トランジスタ8に電流を供給するための電源供給
電極柱21を形成する。電源供給電極柱は金属または導
電性樹脂からなり、基板間のスペーサとしての機能も有
する。そして、ガラス基板1側の全面に形成された陰極
6と有機発光層5の一部に、表示セルの各発光エリアを
規定する陽極毎に切り欠きを形成し、この部分に電源供
給パッド22を形成し、これと各電源供給電極柱21を
接続する。
In the present embodiment, the counter substrate 13 (the counter sealing plate 12 shown in FIG. 2) arranged so as to face the glass substrate 1 is arranged.
(Corresponding to the above) on the entire surface facing the cathode 6
0 is formed, and a power supply electrode column 21 for supplying a current to the current driving thin film transistor 8 of each display cell is formed on the common electrode 20. The power supply electrode column is made of metal or conductive resin and also has a function as a spacer between the substrates. Then, a notch is formed in each of the cathode 6 and the organic light emitting layer 5 formed on the entire surface of the glass substrate 1 side for each anode that defines each light emitting area of the display cell, and a power supply pad 22 is provided in this notch. It is formed, and this is connected to each power supply electrode column 21.

【0009】かかる構成においては、対向基板の電源用
共通電極20から電源供給電極柱21、電源供給パッド
22を通して電流駆動用薄膜トランジスタ8に常時電圧
が印加されているので、縦電極10、横電極11で選択
された表示セルのトランジスタ9がONすると、該当す
る電流駆動用薄膜トランジスタ8が導通し、陽極4、有
機発光層5、陰極6を通して電流が流れ、選択されたセ
ルが発光する。
In such a configuration, since the voltage is constantly applied to the current driving thin film transistor 8 from the power source common electrode 20 of the counter substrate through the power source electrode column 21 and the power source pad 22, the vertical electrode 10 and the horizontal electrode 11 are provided. When the transistor 9 of the display cell selected in step 1 is turned on, the corresponding current driving thin film transistor 8 becomes conductive, and a current flows through the anode 4, the organic light emitting layer 5 and the cathode 6, and the selected cell emits light.

【0010】このように、ガラス基板1には従来のよう
に電源供給線が形成されず、対向基板から垂直に延びる
電源供給電極柱21から電流が供給されるため、電源供
給線によって発光エリアが制限されることがなく、高い
開口率を確保できる。また、対向基板12は従来のもの
においても封止板として設けられており、これを電源供
給用共通電極形成に兼用しているため、従来の構造を保
持したまま開口率が上げられることになる。
As described above, since no power supply line is formed on the glass substrate 1 as in the prior art, and current is supplied from the power supply electrode column 21 extending vertically from the counter substrate, a light emitting area is formed by the power supply line. There is no limitation, and a high aperture ratio can be secured. Further, the counter substrate 12 is provided as a sealing plate even in the conventional one, and is also used for forming the common electrode for power supply, so that the aperture ratio can be increased while maintaining the conventional structure. .

【0011】[0011]

【発明の効果】有機電界発光素子等の電流駆動型の発光
素子をアクティブマトリックス駆動する場合に、従来で
は発光素子と同一面に各画素に電源供給する共通の線が
形成され、これが画素の開口率を下げる要因となってい
たが、本発明においては対向する封止用の基板に電源用
共通電極を形成し、ここから電極柱を通して各画素へ電
流供給するようにしたので、発光素子側の基板上に電源
供給線が不要になり、高い開口率を実現することが可能
となる。
When a current-driven light emitting device such as an organic light emitting device is driven by active matrix, a common line for supplying power to each pixel is conventionally formed on the same surface as the light emitting device, and this is the aperture of the pixel. However, in the present invention, the common electrode for power supply is formed on the opposing sealing substrate and the electric current is supplied to each pixel through the electrode column from here, so that the light emitting element side No power supply line is required on the substrate, and a high aperture ratio can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の画像表示装置の例を説明する図であ
る。
FIG. 1 is a diagram illustrating an example of an image display device of the present invention.

【図2】 有機電界発光素子を用いた画像表示装置の従
来例を示す図である。
FIG. 2 is a diagram showing a conventional example of an image display device using an organic electroluminescent element.

【符号の説明】[Explanation of symbols]

1…ガラス基板、2、3…層間絶縁層、4…陽極、5…
有機発光層、6…陰極、7…電源供給線、8…電流駆動
用薄膜トランジスタ、9…トランジスタ、10…縦電
極、11…横電極、12…対向封止板、13…対向基
板、20…電源用共通電極、21…電源供給電極柱、2
2…電源供給パッド。
1 ... Glass substrate, 2,3 ... Interlayer insulating layer, 4 ... Anode, 5 ...
Organic light emitting layer, 6 ... Cathode, 7 ... Power supply line, 8 ... Current driving thin film transistor, 9 ... Transistor, 10 ... Vertical electrode, 11 ... Horizontal electrode, 12 ... Opposing sealing plate, 13 ... Opposing substrate, 20 ... Power supply Common electrode, 21 ... Power supply electrode column, 2
2 ... Power supply pad.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 発光素子と、該発光素子駆動用トランジ
スタとを同一基板上に形成し、発光素子と駆動用トラン
ジスタとを電源供給線と接地線間に接続した構造の複数
の表示セルを有し、駆動用トランジスタを選択的に駆動
して表示する画像表示装置において、前記基板と平行な
対向基板面に形成された電源用共通電極に、各表示セル
へ電流を供給するための電源供給電極柱を形成したこと
を特徴とする画像表示装置。
1. A plurality of display cells having a structure in which a light emitting element and a transistor for driving the light emitting element are formed on the same substrate, and the light emitting element and the driving transistor are connected between a power supply line and a ground line. In the image display device that selectively drives and displays the driving transistor, a power supply electrode for supplying a current to each display cell to a common electrode for power supply formed on a counter substrate surface parallel to the substrate. An image display device characterized in that a pillar is formed.
【請求項2】 電源供給電極柱は、発光素子上に形成さ
れた陰極の一部に形成した切り欠き部に設けられた電源
供給パッドに接続され、該パッドを通して動用トランジ
スタに接続されることを特徴とする請求項1記載の画像
表示装置。
2. The power supply electrode column is connected to a power supply pad provided in a cutout part formed in a part of a cathode formed on the light emitting element, and is connected to a driving transistor through the pad. The image display device according to claim 1, wherein the image display device is a display device.
JP2002080540A 2002-03-22 2002-03-22 Image display device Pending JP2003280551A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002080540A JP2003280551A (en) 2002-03-22 2002-03-22 Image display device
DE10392143T DE10392143T5 (en) 2002-03-22 2003-03-19 Image display device
US10/476,340 US7106282B2 (en) 2002-03-22 2003-03-19 Image display
CNA038007789A CN1543635A (en) 2002-03-22 2003-03-19 Image display device
PCT/JP2003/003351 WO2003081564A1 (en) 2002-03-22 2003-03-19 Image display
AU2003221436A AU2003221436A1 (en) 2002-03-22 2003-03-19 Image display
TW92106195A TW573439B (en) 2002-03-22 2003-03-20 Image display device
US11/353,902 US20060132009A1 (en) 2002-03-22 2006-02-14 Image displaying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002080540A JP2003280551A (en) 2002-03-22 2002-03-22 Image display device

Publications (1)

Publication Number Publication Date
JP2003280551A true JP2003280551A (en) 2003-10-02

Family

ID=29229531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002080540A Pending JP2003280551A (en) 2002-03-22 2002-03-22 Image display device

Country Status (1)

Country Link
JP (1) JP2003280551A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005173579A (en) * 2003-11-21 2005-06-30 Semiconductor Energy Lab Co Ltd Display device
JP2006215550A (en) * 2005-02-03 2006-08-17 Samsung Sdi Co Ltd Organic electroluminescence display device
KR100757821B1 (en) 2005-11-30 2007-09-11 세이코 엡슨 가부시키가이샤 Light-emitting device and electronic apparatus
WO2009125696A1 (en) * 2008-04-11 2009-10-15 ローム株式会社 Organic el element
JP2009259414A (en) * 2008-04-11 2009-11-05 Rohm Co Ltd Organic el element
KR100978010B1 (en) 2002-09-05 2010-08-25 코닌클리케 필립스 일렉트로닉스 엔.브이. Electroluminescent display devices
JP2012053475A (en) * 2003-11-21 2012-03-15 Semiconductor Energy Lab Co Ltd Display device
KR101223725B1 (en) 2011-01-10 2013-01-17 삼성디스플레이 주식회사 Organic light emitting display device and manufacturing method thereof
JP2013231986A (en) * 2005-03-18 2013-11-14 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100978010B1 (en) 2002-09-05 2010-08-25 코닌클리케 필립스 일렉트로닉스 엔.브이. Electroluminescent display devices
JP2012053475A (en) * 2003-11-21 2012-03-15 Semiconductor Energy Lab Co Ltd Display device
JP2005173579A (en) * 2003-11-21 2005-06-30 Semiconductor Energy Lab Co Ltd Display device
JP2006215550A (en) * 2005-02-03 2006-08-17 Samsung Sdi Co Ltd Organic electroluminescence display device
US7511295B2 (en) 2005-02-03 2009-03-31 Samsung Mobile Display Co., Ltd. Organic light emitting display device having an encapsulation substrate and a portion of an interconnection line thereon
JP2013231986A (en) * 2005-03-18 2013-11-14 Semiconductor Energy Lab Co Ltd Semiconductor device
KR100757821B1 (en) 2005-11-30 2007-09-11 세이코 엡슨 가부시키가이샤 Light-emitting device and electronic apparatus
US8227980B2 (en) 2008-04-11 2012-07-24 Rohm Co., Ltd. Organic EL device
JP2009259414A (en) * 2008-04-11 2009-11-05 Rohm Co Ltd Organic el element
CN101990785B (en) * 2008-04-11 2013-02-27 罗姆股份有限公司 Organic el element
WO2009125696A1 (en) * 2008-04-11 2009-10-15 ローム株式会社 Organic el element
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