JP2003279592A - Piezo-resistive triaxial acceleration sensor - Google Patents
Piezo-resistive triaxial acceleration sensorInfo
- Publication number
- JP2003279592A JP2003279592A JP2002083161A JP2002083161A JP2003279592A JP 2003279592 A JP2003279592 A JP 2003279592A JP 2002083161 A JP2002083161 A JP 2002083161A JP 2002083161 A JP2002083161 A JP 2002083161A JP 2003279592 A JP2003279592 A JP 2003279592A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- piezoresistor
- acceleration sensor
- triaxial acceleration
- difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、玩具、自動車、航
空機、携帯端末機器等に用いられる加速度検出用の半導
体加速度センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration sensor for acceleration detection used in toys, automobiles, aircrafts, mobile terminal devices and the like.
【０００２】[0002]
【従来の技術】従来のピエゾ抵抗型３軸加速度センサの
構造について詳細に説明する。加速度センサの平面図を
図７に、図７のＡ−Ａ’線に沿った断面図を図８に示
す。シリコン単結晶基板（以下、Ｓｉ単結晶基板と言
う）の厚肉部から成る質量部１とそれを取り囲むように
配された外枠部３と、該質量部１および外枠部３とを接
続するＳｉ単結晶基板の薄肉部より成る２対の互いに直
交する梁状の可撓部２１、２１’、２２、２２’と該可
撓部上の２つの直交する方向（ＸとＹ）及び該可撓部２
１、２１’、２２、２２’に垂直な方向（Ｚ）に対応す
るように設けられた各軸複数のピエゾ抵抗体群５１と５
１’、５２と５２’、６１と６１’、６２と６２’、７
１と７１’、７２と７２’とから構成される。また、可
撓部２１、２１’、２２、２２’は図７に符号４で示し
たように薄肉部に貫通穴を設けることによって梁形状と
されており、変形しやすく、高感度化に向いた構造とな
っている。2. Description of the Related Art The structure of a conventional piezoresistive triaxial acceleration sensor will be described in detail. FIG. 7 shows a plan view of the acceleration sensor, and FIG. 8 shows a sectional view taken along the line AA ′ of FIG. 7. A mass part 1 made of a thick part of a silicon single crystal substrate (hereinafter referred to as a Si single crystal substrate), an outer frame part 3 arranged so as to surround the mass part 1, and the mass part 1 and the outer frame part 3 are connected. Two pairs of beam-shaped flexible portions 21, 21 ′, 22, 22 ′ which are made of thin portions of the Si single crystal substrate and are orthogonal to each other, two orthogonal directions (X and Y) on the flexible portion, and Flexible part 2
Piezoresistor groups 51 and 5 for each axis provided so as to correspond to the direction (Z) perpendicular to 1, 21 ', 22, 22'
1 ', 52 and 52', 61 and 61 ', 62 and 62', 7
1 and 71 ', 72 and 72'. Further, the flexible portions 21, 21 ', 22, 22' are made into a beam shape by providing through holes in the thin portion as shown by reference numeral 4 in FIG. It has the same structure as before.
【０００３】加速度の検出原理は、中央の質量部１が加
速度に比例した力を受けて変位したときの可撓部２１、
２１’、２２、２２’の撓みを、可撓部に形成されたピ
エゾ抵抗体群５１と５１’、５２と５２’、６１と６
１’、６２と６２’、７１と７１’、７２と７２’の抵
抗値変化として検出することで３軸方向の加速度を検出
するものである。ここで、可撓部２１、２１’上の４つ
のピエゾ抵抗素子５１、５１’、５２、５２’はＸ軸方
向の加速度を、また、他の４つのピエゾ抵抗素子７１、
７１’、７２、７２’は素子面に垂直なＺ軸方向の加速
度を検出し、また可撓部２２、２２’上の４つのピエゾ
抵抗素子６１、６１’、６２、６２’はＸ軸方向と直交
するＹ軸方向の加速度を検出するように、それぞれ各軸
４つのピエゾ抵抗素子は独立してブリッジ回路を構成す
るように結線されており、Ｘ軸においては５１と５１’
および５２と５２’をそれぞれピエゾ抵抗体対と呼び、
同様にＹ軸においては６１と６１’および６２と６
２’、Ｚ軸においては７１と７１’および７２と７２’
がピエゾ抵抗体対をなす。また、Ｘ，Ｙ軸は出力検出原
理、結線方法およびピエゾ抵抗体の配置が同じであり、
それぞれ他方の軸と入れ替えることができるため、以
降、ＸおよびＹ軸を、特に断りの無い限りＸ軸と表記す
ることとする。The principle of acceleration detection is that the central mass portion 1 is displaced when it receives a force proportional to the acceleration and is displaced,
The bending of 21 ', 22, 22' is controlled by the piezoresistor groups 51 and 51 ', 52 and 52', 61 and 6 formed in the flexible portion.
The accelerations in the three-axis directions are detected by detecting changes in the resistance values of 1 ', 62 and 62', 71 and 71 ', 72 and 72'. Here, the four piezoresistive elements 51, 51 ′, 52, 52 ′ on the flexible portions 21, 21 ′ accelerate the acceleration in the X-axis direction, and the other four piezoresistive elements 71,
71 ', 72, 72' detect acceleration in the Z-axis direction perpendicular to the element surface, and the four piezoresistive elements 61, 61 ', 62, 62' on the flexible portions 22, 22 'are in the X-axis direction. The four piezoresistive elements for each axis are individually connected so as to form a bridge circuit so as to detect the acceleration in the Y-axis direction that is orthogonal to, and 51 and 51 ′ for the X-axis.
And 52 and 52 'are called piezoresistor pairs,
Similarly, on the Y axis, 61 and 61 'and 62 and 6
2 ', 71 and 71' and 72 and 72 'in the Z-axis
Form a piezoresistor pair. The X and Y axes have the same output detection principle, wiring method, and piezoresistor layout,
Since each of them can be replaced with the other axis, hereinafter, the X and Y axes will be referred to as the X axis unless otherwise specified.
【０００４】従来の３軸加速度センサにおけるピエゾ抵
抗体の配置について説明する。図９に示すように、Ｘ軸
用ピエゾ抵抗体対とＺ軸用ピエゾ抵抗体対の片端が可撓
部と外枠部の境界および可撓部と質量部の境界と一致す
る構造となっていた。これは可撓部が加速度を受けて撓
んだとき、可撓部における外枠部および質量部近傍の部
位に応力集中するため、最大のセンサ出力が得られるた
めである。The arrangement of the piezoresistors in the conventional triaxial acceleration sensor will be described. As shown in FIG. 9, one end of each of the X-axis piezoresistor pair and the Z-axis piezoresistor pair is aligned with the boundary between the flexible portion and the outer frame portion and the boundary between the flexible portion and the mass portion. It was This is because when the flexible portion bends due to acceleration, stress concentrates on a portion of the flexible portion near the outer frame portion and the mass portion, so that the maximum sensor output is obtained.
【０００５】ピエゾ抵抗体が図９のように配置されてい
る場合にはＸ軸とＺ軸の感度（加速度１Ｇ、駆動電圧１
Ｖに対する出力）には、図１０に示すような関係がある
ことが一般に知られている。Ｘ軸方向に１Ｇの加速度が
加えられた場合には、可撓部に加わる曲げモーメント
は、可撓部２１、２１’、２２、２２’を通る平面から
質量部１の重心までの距離（ｓ１とする）と質量部の質
量（ｍとする）の積で表される。従って質量部の厚さが
変化した場合、曲げモーメントはｓ１およびｍに比例す
るため、Ｘ軸の感度は２次関数的に変化する。これに対
しＺ軸方向に１Ｇの加速度が加えられた場合には、可撓
部に加わる曲げモーメントは、可撓部の長さ（ｓ２とす
る）と質量部の質量ｍの積で表される。従って質量部の
厚さが変化した場合、曲げモーメントはｍにのみ比例す
るため、Ｚ軸の感度は１次関数的に変化する。When the piezoresistors are arranged as shown in FIG. 9, the X-axis and Z-axis sensitivities (acceleration 1 G, drive voltage 1
It is generally known that (output with respect to V) has a relationship as shown in FIG. When an acceleration of 1 G is applied in the X-axis direction, the bending moment applied to the flexible portion is the distance (s1 from the plane passing through the flexible portions 21, 21 ', 22, 22' to the center of gravity of the mass portion 1). And the mass of the mass part (assumed to be m). Therefore, when the thickness of the mass portion changes, the bending moment is proportional to s1 and m, so that the X-axis sensitivity changes in a quadratic function. On the other hand, when an acceleration of 1 G is applied in the Z-axis direction, the bending moment applied to the flexible portion is represented by the product of the length of the flexible portion (denoted as s2) and the mass m of the mass portion. . Therefore, when the thickness of the mass portion changes, the bending moment is proportional only to m, so that the Z-axis sensitivity changes in a linear function.
【０００６】図１０から判るように、Ｘ軸とＺ軸の出力
差をなくすためには質量部の厚さを８００μｍ程度にす
れば良い。しかし、半導体等で使用されるＳｉ単結晶基
板の厚みは、６２５μｍと５２５μｍが主流となってい
るため、約８００μｍのＳｉ単結晶基板は特注となり、
高コストとなるだけでなく、納期が不安定となる問題が
あるため、質量部の厚さによって出力調整を行うのは好
ましい方法ではない。As can be seen from FIG. 10, in order to eliminate the output difference between the X axis and the Z axis, the thickness of the mass portion may be set to about 800 μm. However, since the thicknesses of Si single crystal substrates used in semiconductors and the like are 625 μm and 525 μm, the Si single crystal substrates of about 800 μm are custom-made.
It is not a preferable method to adjust the output by adjusting the thickness of the mass part, because not only the cost becomes high but also the delivery time becomes unstable.
【０００７】[0007]
【発明の解決しようとする課題】従来の加速度センサの
ピエゾ抵抗体の配置では、Ｘ軸の出力と比較してＺ軸の
出力が大きくなってしまう。軸間の出力差が大きい場
合、出力増幅率が異なる増幅器を各軸毎に準備する必要
があり、コスト高になる欠点がある。In the arrangement of the piezoresistor of the conventional acceleration sensor, the output of the Z axis becomes larger than the output of the X axis. When the output difference between the axes is large, it is necessary to prepare an amplifier having a different output amplification factor for each axis, which is disadvantageous in that the cost becomes high.
【０００８】Ｚ軸のピエゾ抵抗体群と他群の不純物濃度
を変え、ピエゾ特性を変化させＺ軸の出力を下げてＸ軸
とＹ軸の出力を同等にすることは可能である。しかしピ
エゾ抵抗体を形成するときに不純物の打ち込みを、Ｚ軸
だけ別に行う必要があり、工程増によるコスト高とな
る。またＸ軸用ピエゾ抵抗体とＺ軸用ピエゾ抵抗体の温
度特性が異なってしまうという問題がある。It is possible to change the impurity concentrations of the Z-axis piezoresistor group and other groups, change the piezo characteristics, and lower the Z-axis output to make the X-axis and Y-axis outputs equal. However, when the piezoresistor is formed, it is necessary to implant the impurities separately for the Z axis, which increases the cost due to the increased number of steps. There is also a problem that the temperature characteristics of the X-axis piezoresistor and the Z-axis piezoresistor differ.
【０００９】Ｚ軸用ピエゾ抵抗体対間隔を変えずにピエ
ゾ抵抗体対を可撓部長さ方向に対して平行移動させるこ
とによってもＺ軸の出力は下げることはできるが、オフ
セット電圧（各軸に加速度が加わっていない状態のＺ軸
の出力）および他軸感度（他の軸に加速度が加わった場
合のＺ軸の出力）が悪化する問題がある。The output of the Z-axis can be reduced by moving the piezoresistor pair in parallel with the length direction of the flexible portion without changing the Z-axis piezoresistor pair interval, but the offset voltage (each axis There is a problem that the Z-axis output in the state where no acceleration is applied) and the sensitivity to other axes (Z-axis output when acceleration is applied to another axis) are deteriorated.
【００１０】Ｚ軸のピエゾ抵抗体の形状を変えて、Ｚ軸
の出力を下げることも可能だが、ピエゾ抵抗体の抵抗値
が変わり、ブリッジバランスをとることが難しくなるた
め、ピエゾ抵抗体はすべて同形状であることが好まし
い。It is possible to reduce the output of the Z-axis by changing the shape of the Z-axis piezoresistor, but since the resistance value of the piezoresistor changes and bridge balancing becomes difficult, all piezoresistors are used. It is preferable that they have the same shape.
【００１１】そこで、本発明ではＸ，Ｙ，Ｚの３軸の出
力差が小さく、３軸のピエゾ抵抗体の抵抗値や温度特性
が同じで、小型薄型で製造コストが安い３軸加速度セン
サを提供することを目的とする。Therefore, according to the present invention, a triaxial acceleration sensor having a small output difference between the three axes of X, Y, and Z, a triaxial piezoresistor having the same resistance value and temperature characteristics, and being small in size and low in manufacturing cost is provided. The purpose is to provide.
【００１２】[0012]
【課題を解決するための手段】本発明のピエゾ抵抗型３
軸加速度センサは、平面方向および垂直方向の加速度を
ピエゾ抵抗体で検出する３軸加速度センサであって、そ
のピエゾ抵抗体の大部分は両端を外枠部と質量部に接続
された可撓部上に配されており、Ｘ軸およびＹ軸用のピ
エゾ抵抗体対間隔とＺ軸用のピエゾ抵抗体対間隔が異な
っていることを特徴とする。Piezoresistive type 3 of the present invention
The axial acceleration sensor is a three-axis acceleration sensor that detects accelerations in a planar direction and a vertical direction with a piezoresistor, and most of the piezoresistor is a flexible part whose both ends are connected to an outer frame part and a mass part. The piezoresistor pair interval for the X-axis and the Y-axis and the piezoresistor pair interval for the Z-axis are different from each other.
【００１３】本発明のピエゾ抵抗型３軸加速度センサと
は、平面方向の加速度と垂直方向の加速度を検出するセ
ンサのことをいい、Ｘ軸とＺ軸、ありはＹ軸とＺ軸のみ
の検出機構を有するセンサ、またＸ，Ｙ，Ｚ３軸の検出
機構を有しているが、Ｘ軸とＺ軸、あるいはＹ軸とＺ軸
のみを用いるセンサも含まれるものである。The piezoresistive three-axis acceleration sensor of the present invention is a sensor for detecting acceleration in the plane direction and acceleration in the vertical direction, and detects only the X-axis and Z-axis or the Y-axis and Z-axis. A sensor having a mechanism and a detection mechanism for the X, Y, and Z axes are included, but a sensor using only the X axis and the Z axis or the Y axis and the Z axis is also included.
【００１４】ピエゾ抵抗体対の配置は、出力を最大限に
得るために３軸とも、可撓部上でピエゾ抵抗体の片端が
応力集中する可撓部の端部と一致させるように形成され
ていた。しかしこの構造ではＸ軸の出力と比較してＺ軸
の出力が大きくなってしまうため、Ｘ軸用ピエゾ抵抗体
対間隔に対してＺ軸用ピエゾ抵抗体対間隔が異なるよう
にピエゾ抵抗体を配し、Ｘ軸とＹ軸の出力レベルを保
ち、Ｚ軸の出力レベルを下げることでＸ軸とＺ軸の出力
差を小さくしたものである。ここで言う、ピエゾ抵抗体
対間隔とは可撓部上に形成されたそれぞれの軸における
一対のピエゾ抵抗体の可撓部長さ方向に対する中心間距
離のことである。The arrangement of the piezoresistor pair is formed such that one end of the piezoresistor is aligned with the end of the flexible portion on which stress is concentrated on all three axes in order to maximize the output. Was there. However, in this structure, the output of the Z-axis becomes larger than the output of the X-axis. The output levels of the X-axis and the Y-axis are maintained and the output level of the Z-axis is lowered to reduce the output difference between the X-axis and the Z-axis. The piezoresistor pair spacing referred to here is the center-to-center distance in the length direction of the flexible portion of the pair of piezoresistors on each axis formed on the flexible portion.
【００１５】本発明のピエゾ抵抗型３軸加速度センサ
は、Ｚ軸用ピエゾ抵抗体対間隔が、Ｘ軸用ピエゾ抵抗体
対間隔より大きく、Ｚ軸用ピエゾ抵抗体の少なくとも一
部が外枠部と質量部上に配されていることが望ましい。In the piezoresistive triaxial acceleration sensor of the present invention, the Z-axis piezoresistor pair interval is larger than the X-axis piezoresistor pair interval, and at least a part of the Z-axis piezoresistor is the outer frame portion. It is desirable to be placed on the mass part.
【００１６】Ｚ軸用ピエゾ抵抗体対間隔がＸ軸用ピエゾ
抵抗体対間隔より大きく、Ｚ軸用ピエゾ抵抗体の少なく
とも一部が外枠部と質量部上に配置されている。これは
ピエゾ抵抗体の一部を可撓部外に配することによりピエ
ゾ抵抗体に不感領域を発生させ、ピエゾ抵抗体の感度を
下げるものである。The Z-axis piezoresistor pair interval is larger than the X-axis piezoresistor pair interval, and at least a part of the Z-axis piezoresistor is arranged on the outer frame part and the mass part. This is to arrange a part of the piezoresistor outside the flexible portion to generate an insensitive area in the piezoresistor and reduce the sensitivity of the piezoresistor.
【００１７】本発明のピエゾ抵抗型３軸加速度センサ
は、Ｚ軸用ピエゾ抵抗体対間隔をＸ軸用ピエゾ抵抗体対
間隔より大きく、Ｚ軸用ピエゾ抵抗体対間隔とＸ軸用ピ
エゾ抵抗体対間隔の差が、ピエゾ抵抗体の長手方向の長
さＬに対し、０．４Ｌ以上１．２Ｌ以下であることが望
ましい。同間隔の差を０．６Ｌ以上１．０Ｌ以下とする
ことがより望ましい。In the piezoresistive triaxial acceleration sensor of the present invention, the Z-axis piezoresistor pair interval is larger than the X-axis piezoresistor pair interval, and the Z-axis piezoresistor pair interval and the X-axis piezoresistor pair interval. It is desirable that the difference between the pair distances is 0.4 L or more and 1.2 L or less with respect to the length L of the piezoresistor in the longitudinal direction. It is more desirable that the difference between the same intervals be 0.6 L or more and 1.0 L or less.
【００１８】本発明のピエゾ抵抗型３軸加速度センサは
Ｚ軸用ピエゾ抵抗体対間隔が、Ｘ軸用ピエゾ抵抗体対の
間隔より小さく、Ｚ軸用ピエゾ抵抗体が可撓部上に配さ
れていることが望ましい。In the piezoresistive triaxial acceleration sensor of the present invention, the Z-axis piezoresistor pair interval is smaller than the X-axis piezoresistor pair interval, and the Z-axis piezoresistor is arranged on the flexible portion. Is desirable.
【００１９】Ｚ軸用ピエゾ抵抗体対間隔がＸ軸用ピエゾ
抵抗体対間隔より小さく、Ｚ軸用ピエゾ抵抗体は可撓部
上に配され、Ｚ軸用ピエゾ抵抗体の片端が可撓部と外枠
部の境界もしくは可撓部と質量部の境界と距離を有す
る。Ｘ軸用ピエゾ抵抗体は出力を最大限に得るために応
力集中する外枠部および質量部との接続境界部にピエゾ
抵抗体の片端が配されているのに対し、Ｚ軸用ピエゾ抵
抗体は応力集中領域の寄与が少ない位置に配すること
で、Ｚ軸用ピエゾ抵抗体の感度を下げるものである。The Z-axis piezoresistor pair spacing is smaller than the X-axis piezoresistor pair spacing, the Z-axis piezoresistor is disposed on the flexible portion, and one end of the Z-axis piezoresistor is flexible. And a boundary between the outer frame portion and a boundary between the flexible portion and the mass portion. In the X-axis piezoresistor, one end of the piezoresistor is arranged at the boundary between the outer frame part and the mass part where stress is concentrated in order to maximize the output, whereas the Z-axis piezoresistor is arranged. Is to reduce the sensitivity of the Z-axis piezoresistor by arranging it in a position where the stress concentration region contributes little.
【００２０】本発明のピエゾ抵抗型３軸加速度センサ
は、Ｚ軸用ピエゾ抵抗体対間隔をＸ軸用ピエゾ抵抗体対
間隔より小さく、Ｚ軸用ピエゾ抵抗体対間隔とＸ軸用ピ
エゾ抵抗体対間隔の差が、ピエゾ抵抗体の長手方向の長
さＬに対し、１．０Ｌ以上１．８Ｌ以下であることが望
ましい。同間隔の差を１．２Ｌ以上１．６Ｌ以下とする
ことがより望ましい。In the piezoresistive triaxial acceleration sensor of the present invention, the Z-axis piezoresistor pair interval is smaller than the X-axis piezoresistor pair interval, and the Z-axis piezoresistor pair interval and the X-axis piezoresistor pair interval. It is desirable that the difference between the pair distances is 1.0 L or more and 1.8 L or less with respect to the length L of the piezoresistor in the longitudinal direction. It is more desirable that the difference between the same intervals is 1.2 L or more and 1.6 L or less.
【００２１】本発明のピエゾ抵抗型３軸加速度センサ
は、次の主な工程を経て作製される。Ｓｉ単結晶基板に
ピエゾ抵抗体群を形成する工程。ピエゾ抵抗体はＳｉ単
結晶基板にボロンを不純物としてイオン打込み法により
作製される。ピエゾ抵抗体群の位置を形状はパターニン
グに使用するフォトマスクのマスクパターンによって決
められ、可撓部上のＸ軸とＺ軸のピエゾ抵抗体対の間隔
が異なるようにしておく。ピエゾ抵抗体群を保護する保
護膜を形成し、ピエゾ抵抗体群とアルミ配線を導通させ
るためのコンタクトホールをウエットエッチング等によ
って形成する工程。可撓部上のピエゾ抵抗体群が３軸そ
れぞれブリッジ回路を構成するようにアルミ配線を形成
する工程。可撓部が薄い梁形状となるようにＳｉ単結晶
基板を表裏面からドライエッチングする工程。Ｓｉ単結
晶基板を切断して、ピエゾ抵抗型３軸加速度センサ素子
を得る工程。ピエゾ抵抗型３軸加速度センサ素子を、パ
ッケージに入れ配線等を行う組立て工程を経て、ピエゾ
抵抗型３軸加速度センサを得る。尚、本明細書では、ピ
エゾ抵抗型３軸加速度センサ素子をピエゾ抵抗型３軸加
速度センサと表記している。The piezoresistive triaxial acceleration sensor of the present invention is manufactured through the following main steps. A step of forming a piezoresistor group on a Si single crystal substrate. The piezoresistor is produced by ion implantation on a Si single crystal substrate with boron as an impurity. The shape of the position of the piezoresistor group is determined by the mask pattern of the photomask used for patterning, and the intervals between the X-axis and Z-axis piezoresistor pairs on the flexible portion are made different. A step of forming a protective film for protecting the piezoresistor group and forming a contact hole for conducting the piezoresistor group and the aluminum wiring by wet etching or the like. A step of forming aluminum wiring so that the piezoresistor group on the flexible portion constitutes a bridge circuit for each of the three axes. A step of dry etching the Si single crystal substrate from the front and back surfaces so that the flexible portion has a thin beam shape. A step of cutting the Si single crystal substrate to obtain a piezoresistive triaxial acceleration sensor element. A piezoresistive triaxial acceleration sensor is obtained through an assembly process in which a piezoresistive triaxial acceleration sensor element is put in a package and wiring is performed. In this specification, the piezoresistive triaxial acceleration sensor element is referred to as a piezoresistive triaxial acceleration sensor.
【００２２】[0022]
【発明の実施の形態】本発明のピエゾ抵抗型３軸加速度
センサの実施例について図１、２を用いて説明する。図
１は本発明のピエゾ抵抗型３軸加速度センサの平面図で
あり、図２は可撓部上に配されたＸ軸およびＺ軸のピエ
ゾ抵抗体の配置を表した部分拡大平面図である。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a piezoresistive type triaxial acceleration sensor of the present invention will be described with reference to FIGS. FIG. 1 is a plan view of a piezoresistive triaxial acceleration sensor of the present invention, and FIG. 2 is a partially enlarged plan view showing an arrangement of X-axis and Z-axis piezoresistors arranged on a flexible portion. .
【００２３】本実施例の加速度センサは、ピエゾ抵抗体
の長さを１１０μｍ、可撓部の長さを５００μｍ、幅を
１００μｍ、厚さを７μｍ、質量部および外枠部の厚さ
を５５０μｍとした。ピエゾ抵抗体は、Ｓｉ単結晶に不
純物であるボロンを、表面不純物濃度で２×１０１８ａ
ｔｏｍｓ／ｃｍ３となるように条件設定した。Ｘ軸用ピ
エゾ抵抗体の片端は可撓部端部と一致させて配置した。
Ｘ軸とＺ軸用ピエゾ抵抗体対間隔の差を、ピエゾ抵抗体
の長手方向の長さＬに対して０．２Ｌから２．４Ｌま
で、０．２Ｌピッチで変化させた。比較のために従来形
状の差なしも作製し、Ｘ軸とＺ軸の出力比を測定した。
Ｚ軸用ピエゾ抵抗体対は、可撓部の長さ方向に垂直な二
等分線に対して対称に配置されているので、Ｚ軸用ピエ
ゾ抵抗体７１′、７２の一部が外枠部に、７１’、７
２’の一部が質量部上に配される図２の構造となる。In the acceleration sensor of this embodiment, the length of the piezoresistor is 110 μm, the length of the flexible portion is 500 μm, the width is 100 μm, the thickness is 7 μm, and the thickness of the mass portion and the outer frame portion is 550 μm. did. The piezoresistor contains boron, which is an impurity, in Si single crystal at a surface impurity concentration of 2 × 10 18 a.
The conditions were set so as to be toms / cm 3 . One end of the piezoresistor for the X axis was arranged so as to match the end of the flexible portion.
The difference between the X-axis and Z-axis piezoresistor pair spacing was changed at 0.2L pitch from 0.2L to 2.4L with respect to the length L of the piezoresistor in the longitudinal direction. For comparison, a conventional type having no difference was also manufactured, and the output ratio of the X axis and the Z axis was measured.
Since the Z-axis piezoresistor pair is arranged symmetrically with respect to the bisector perpendicular to the length direction of the flexible portion, a part of the Z-axis piezoresistors 71 'and 72 is an outer frame. 71 ', 7
The structure of FIG. 2 has a part of 2'disposed on the mass part.
【００２４】Ｘ軸とＺ軸の出力比（Ｚ／Ｘ）を図３に示
す。比較に入れた従来構造の出力比はピエゾ抵抗体対間
隔とＺ軸用ピエゾ抵抗体対間隔の差は０であったため、
出力比は１．５である。Ｚ軸ピエゾ抵抗体対間隔とＸ軸
ピエゾ抵抗体対間隔の差が大きくなるに従ってＺ軸の出
力が下がり、その差が約０．８ＬでＸ軸とＺ軸の出力差
がなくなり、さらに差を大きくするとＺ軸の出力がＸ軸
より低くなってしまった。この事から、差を０．８Ｌ近
傍とすることでＸ軸とＺ軸の出力比をほぼ１とすること
ができる。The output ratio (Z / X) of the X-axis and the Z-axis is shown in FIG. The output ratio of the conventional structure included in the comparison is 0 because the difference between the piezoresistor pair interval and the Z-axis piezoresistor pair interval is 0.
The output ratio is 1.5. As the difference between the Z-axis piezoresistor pair spacing and the X-axis piezoresistor pair spacing increases, the Z-axis output decreases, and when the difference is about 0.8L, the X-axis and Z-axis output difference disappears. When it is increased, the output of Z axis is lower than that of X axis. From this fact, the output ratio of the X axis and the Z axis can be made approximately 1 by setting the difference to be near 0.8L.
【００２５】本発明の他の実施例について図４、５を用
いて説明する。図４はピエゾ抵抗型３軸加速度センサの
平面図で、図５は可撓部上に配されたＸ軸およびＺ軸の
ピエゾ抵抗体の配置を表した部分拡大平面図である。Another embodiment of the present invention will be described with reference to FIGS. FIG. 4 is a plan view of the piezoresistive triaxial acceleration sensor, and FIG. 5 is a partially enlarged plan view showing the arrangement of the X-axis and Z-axis piezoresistors arranged on the flexible portion.
【００２６】本実施例の加速度センサは、ピエゾ抵抗体
の長さを１１０μｍ、可撓部の長さを５００μｍ、幅を
１００μｍ、厚さを７μｍ、質量部および外枠部の厚さ
を５５０μｍとした。ピエゾ抵抗体は、Ｓｉ単結晶に不
純物であるボロンを、表面不純物濃度で２×１０１８ａ
ｔｏｍｓ／ｃｍ３となるように条件設定した。Ｘ軸用ピ
エゾ抵抗体の片端は可撓部端部と一致させて配置した。
Ｘ軸とＺ軸用ピエゾ抵抗体対間隔の差を、ピエゾ抵抗体
の長手方向の長さＬに対して０．２Ｌから２．４Ｌま
で、０．２Ｌピッチで変化させた。比較のために従来形
状の差なしも作製し、Ｘ軸とＺ軸の出力比を測定した。
Ｚ軸用ピエゾ抵抗体対は、可撓部の長さ方向に垂直な二
等分線に対して対称に配置されており、Ｚ軸用ピエゾ抵
抗体７１、７２は可撓部上に配された図５の構造とな
る。In the acceleration sensor of this embodiment, the length of the piezoresistor is 110 μm, the length of the flexible portion is 500 μm, the width is 100 μm, the thickness is 7 μm, and the thickness of the mass portion and the outer frame portion is 550 μm. did. The piezoresistor contains boron, which is an impurity, in Si single crystal at a surface impurity concentration of 2 × 10 18 a.
The conditions were set so as to be toms / cm 3 . One end of the piezoresistor for the X axis was arranged so as to match the end of the flexible portion.
The difference between the X-axis and Z-axis piezoresistor pair spacing was changed at 0.2L pitch from 0.2L to 2.4L with respect to the length L of the piezoresistor in the longitudinal direction. For comparison, a conventional type having no difference was also manufactured, and the output ratio of the X axis and the Z axis was measured.
The Z-axis piezoresistor pairs are arranged symmetrically with respect to the bisector perpendicular to the length direction of the flexible portion, and the Z-axis piezoresistors 71 and 72 are arranged on the flexible portion. The structure shown in FIG. 5 is obtained.
【００２７】Ｘ軸とＺ軸の出力比（Ｚ／Ｘ）を図６に示
す。比較に入れた従来構造の出力比は１．５である。Ｚ
軸用ピエゾ抵抗体対間隔とＸ軸用ピエゾ抵抗体対間隔の
差が大きくなるに従ってＺ軸の出力が下がり、その差が
約１．４ＬでＸ軸とＺ軸の出力差がなくなり、さらに差
を大きくするとＺ軸の出力がＸ軸より低くなってしまっ
た。この事から、差を１．４Ｌ近傍とすることでＸ軸と
Ｚ軸の出力比をほぼ１とすることができる。The output ratio (Z / X) of the X-axis and the Z-axis is shown in FIG. The output ratio of the conventional structure included in the comparison is 1.5. Z
The Z-axis output decreases as the difference between the axial piezoresistor pair spacing and the X-axis piezoresistor pair spacing increases, and when the difference is about 1.4L, the X-axis and Z-axis output difference disappears. When is increased, the output of Z axis is lower than that of X axis. From this fact, the output ratio of the X-axis and the Z-axis can be made approximately 1 by setting the difference in the vicinity of 1.4L.
【００２８】本発明のピエゾ抵抗型３軸加速度センサは
従来のピエゾ抵抗型３軸加速度センサと比較して、従来
Ｘ軸の出力に対して５０％あったＸ軸とＺ軸の出力差を
小さくすることができた。特にＸ軸とＺ軸用ピエゾ抵抗
体対間隔の差を、ピエゾ抵抗体の長手方向の長さＬに対
して、０．６Ｌ以上１．０Ｌ以下の範囲で、Ｚ軸用ピエ
ゾ抵抗体対間隔をＸ軸用ピエゾ抵抗体対間隔より大き
く、また、１．２Ｌ以上１．６Ｌ以下の範囲でＺ軸用ピ
エゾ抵抗体対間隔をＸ軸用ピエゾ抵抗体対間隔より小さ
くすることで、Ｘ軸とＺ軸の出力差を２０％以下に改善
することができた。The piezoresistive triaxial acceleration sensor of the present invention has a smaller output difference between the X-axis and Z-axis, which is 50% of the conventional X-axis output, as compared with the conventional piezoresistive triaxial acceleration sensor. We were able to. In particular, the difference between the X-axis and Z-axis piezoresistor pair spacing is set within the range of 0.6L or more and 1.0L or less with respect to the length L of the piezoresistor in the longitudinal direction. Is larger than the X-axis piezoresistor pair interval, and the Z-axis piezoresistor pair interval is smaller than the X-axis piezoresistor pair interval in the range of 1.2L or more and 1.6L or less, thereby And the output difference of the Z axis could be improved to 20% or less.
【００２９】[0029]
【発明の効果】以上説明したように、Ｘ軸用ピエゾ抵抗
体対間隔とＺ軸用ピエゾ抵抗体対間隔が異なるようにピ
エゾ抵抗体を配することで、Ｚ軸の出力を下げ３軸の出
力差を２０％以下にすることができた。ピエゾ抵抗体の
抵抗値や温度特性が同じとなるので、軸毎に増幅器を準
備する必要もないため小型で安価なピエゾ抵抗型３軸加
速度センサを提供できるようになった。As described above, the Z-axis output is reduced by arranging the piezoresistors so that the X-axis piezoresistor pair interval and the Z-axis piezoresistor pair interval are different. The output difference could be reduced to 20% or less. Since the resistance values and temperature characteristics of the piezoresistors are the same, it is not necessary to prepare an amplifier for each axis, so that a small and inexpensive piezoresistive triaxial acceleration sensor can be provided.
【図１】本発明のピエゾ抵抗型３軸加速度センサの平面
図FIG. 1 is a plan view of a piezoresistive triaxial acceleration sensor of the present invention.
【図２】本発明のピエゾ抵抗型３軸加速度センサの部分
拡大平面図FIG. 2 is a partially enlarged plan view of a piezoresistive triaxial acceleration sensor of the present invention.
【図３】本発明のピエゾ抵抗型３軸加速度センサのＸ軸
とＺ軸の出力比を示すグラフFIG. 3 is a graph showing the output ratio of the X-axis and the Z-axis of the piezoresistive triaxial acceleration sensor of the present invention.
【図４】本発明の他のピエゾ抵抗型３軸加速度センサの
平面図FIG. 4 is a plan view of another piezoresistive triaxial acceleration sensor of the present invention.
【図５】本発明の他のピエゾ抵抗型３軸加速度センサの
部分拡大平面図FIG. 5 is a partially enlarged plan view of another piezoresistive triaxial acceleration sensor of the present invention.
【図６】本発明のピエゾ抵抗型３軸加速度センサのＸ軸
とＺ軸の出力比を示すグラフFIG. 6 is a graph showing the output ratio of the X-axis and the Z-axis of the piezoresistive triaxial acceleration sensor of the present invention.
【図７】従来のピエゾ抵抗型３軸加速度センサの平面図FIG. 7 is a plan view of a conventional piezoresistive triaxial acceleration sensor.
【図８】従来のピエゾ抵抗型３軸加速度センサのＡ−
Ａ’断面図FIG. 8 A- of a conventional piezoresistive triaxial acceleration sensor
A'cross section
【図９】従来のピエゾ抵抗型３軸加速度センサの部分拡
大平面図FIG. 9 is a partially enlarged plan view of a conventional piezoresistive triaxial acceleration sensor.
【図１０】従来の加速度センサの質量部厚さとＸ軸およ
びＺ軸の感度の関係を示すグラフFIG. 10 is a graph showing the relationship between the mass portion thickness of a conventional acceleration sensor and the X-axis and Z-axis sensitivities.
１ 質量部、２１， ２１’ ２２ ２２’ 可撓部、
３ 外枠部、４ 貫通穴、５１ ５１’ ５２ ５２’
Ｘ軸のピエゾ抵抗体群、６１ ６１’ ６２ ６２’
Ｙ軸のピエゾ抵抗体群、７１ ７１’ ７２ ７２’
Ｚ軸のピエゾ抵抗体群。1 mass part, 21, 21 '22 22' flexible part,
3 outer frame part, 4 through holes, 51 51 '52 52'
X-axis piezoresistor group, 61 61 '62 62'
Y-axis piezoresistor group, 71 71 '72 72'
Z-axis piezoresistor group.
Claims (5)
速度センサであって、そのピエゾ抵抗体の大部分の領域
は両端を外枠部と質量部に接続された可撓部上に配され
ており、Ｘ軸およびＹ軸用のピエゾ抵抗体対間隔とＺ軸
用のピエゾ抵抗体対間隔が異なっていることを特徴とす
るピエゾ抵抗型３軸加速度センサ。1. A triaxial acceleration sensor for detecting acceleration with a piezoresistor, wherein most of the area of the piezoresistor is arranged on a flexible part whose both ends are connected to an outer frame part and a mass part. The piezoresistive triaxial acceleration sensor is characterized in that the X-axis and Y-axis piezoresistor pair intervals are different from the Z-axis piezoresistor pair intervals.
Ｙ軸用ピエゾ抵抗体対間隔より大きく、Ｚ軸用ピエゾ抵
抗体の少なくとも一部が、外枠部と質量部上に配されて
いることを特徴とする請求項１に記載のピエゾ抵抗型３
軸加速度センサ。2. A Z-axis piezoresistor pair interval is larger than an X- and Y-axis piezoresistor pair interval, and at least a part of the Z-axis piezoresistor is arranged on the outer frame part and the mass part. The piezoresistive type 3 according to claim 1, characterized in that
Axial acceleration sensor.
Ｙ軸用ピエゾ抵抗体対間隔の差がピエゾ抵抗体の長さＬ
に対し、０．４Ｌ以上１．２以下であることを特徴とす
る請求項１および２に記載のピエゾ抵抗型３軸加速度セ
ンサ。3. The difference between the Z-axis piezoresistor pair spacing and the X or Y-axis piezoresistor pair spacing is the length L of the piezoresistor.
On the other hand, it is 0.4 L or more and 1.2 or less, and the piezoresistance type triaxial acceleration sensor according to claim 1 or 2.
Ｙ軸用ピエゾ抵抗体対間隔より小さく、Ｚ軸用ピエゾ抵
抗体が可撓部上に配されていることを特徴とする請求項
１に記載のピエゾ抵抗型３軸加速度センサ。4. The Z-axis piezoresistor pair interval is smaller than the X- and Y-axis piezoresistor pair interval, and the Z-axis piezoresistor is arranged on the flexible portion. Item 3. A piezoresistive triaxial acceleration sensor according to Item 1.
Ｙ軸用ピエゾ抵抗体対間隔の差がピエゾ抵抗体の長さＬ
に対し、１．０Ｌ以上１．８Ｌ以下であることを特徴と
する請求項１および４に記載のピエゾ抵抗型３軸加速度
センサ。5. The difference between the Z-axis piezoresistor pair spacing and the X or Y-axis piezoresistor pair spacing is the length L of the piezoresistor.
On the other hand, it is 1.0 L or more and 1.8 L or less, and the piezoresistive triaxial acceleration sensor according to claim 1 or 4.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002083161A JP3642054B2 (en) | 2002-03-25 | 2002-03-25 | Piezoresistive 3-axis acceleration sensor |
| US10/384,645 US6763719B2 (en) | 2002-03-25 | 2003-03-11 | Acceleration sensor |
| EP03006231A EP1348967A3 (en) | 2002-03-25 | 2003-03-20 | Acceleration sensor |
| CNB2006100770261A CN100422697C (en) | 2002-03-25 | 2003-03-25 | Acceleration transducer |
| KR10-2003-0018405A KR100508198B1 (en) | 2002-03-25 | 2003-03-25 | Acceleration sensor |
| CNB031082149A CN100334453C (en) | 2002-03-25 | 2003-03-25 | Acceleration transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002083161A JP3642054B2 (en) | 2002-03-25 | 2002-03-25 | Piezoresistive 3-axis acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003279592A true JP2003279592A (en) | 2003-10-02 |
| JP3642054B2 JP3642054B2 (en) | 2005-04-27 |
Family
ID=29231058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002083161A Expired - Fee Related JP3642054B2 (en) | 2002-03-25 | 2002-03-25 | Piezoresistive 3-axis acceleration sensor |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3642054B2 (en) |
| CN (1) | CN100422697C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006177823A (en) * | 2004-12-22 | 2006-07-06 | Oki Electric Ind Co Ltd | Acceleration sensor |
| US7222536B2 (en) | 2004-09-30 | 2007-05-29 | Hitachi Metals, Ltd. | Semiconductor acceleration sensor |
| US7331230B2 (en) | 2003-12-24 | 2008-02-19 | Hitachi Metals, Ltd. | Semiconductor-type three-axis acceleration sensor |
| US7360426B2 (en) | 2004-11-09 | 2008-04-22 | Fujitsu Media Devices Limited | Acceleration sensor |
| US8474318B2 (en) | 2007-07-27 | 2013-07-02 | Hitachi Metals, Ltd. | Acceleration sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102408089A (en) * | 2010-09-20 | 2012-04-11 | 利顺精密科技股份有限公司 | Micro electronmechanical sensor capable of simultaneously measuring acceleration and pressure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69019343T2 (en) * | 1989-12-28 | 1996-02-15 | Wako Kk | Acceleration sensors. |
| JPH04339266A (en) * | 1991-02-08 | 1992-11-26 | Tokai Rika Co Ltd | Acceleration sensor and its manufacture |
| DE4340664C2 (en) * | 1993-11-30 | 1999-02-11 | Helmut Dipl Ing Dr Crazzolara | Piezoresistive accelerometer |
| JPH08285883A (en) * | 1995-04-14 | 1996-11-01 | Matsushita Electric Works Ltd | Acceleration sensor |
-
2002
- 2002-03-25 JP JP2002083161A patent/JP3642054B2/en not_active Expired - Fee Related
-
2003
- 2003-03-25 CN CNB2006100770261A patent/CN100422697C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7331230B2 (en) | 2003-12-24 | 2008-02-19 | Hitachi Metals, Ltd. | Semiconductor-type three-axis acceleration sensor |
| US7222536B2 (en) | 2004-09-30 | 2007-05-29 | Hitachi Metals, Ltd. | Semiconductor acceleration sensor |
| EP1643255A3 (en) * | 2004-09-30 | 2009-03-11 | Hitachi Metals, Ltd. | Semiconductor acceleration sensor |
| US7360426B2 (en) | 2004-11-09 | 2008-04-22 | Fujitsu Media Devices Limited | Acceleration sensor |
| JP2006177823A (en) * | 2004-12-22 | 2006-07-06 | Oki Electric Ind Co Ltd | Acceleration sensor |
| US7281427B2 (en) | 2004-12-22 | 2007-10-16 | Oki Electric Industry Co., Ltd. | Acceleration sensor |
| US7500395B2 (en) | 2004-12-22 | 2009-03-10 | Oki Semiconductor Co., Ltd. | Acceleration sensor |
| US8474318B2 (en) | 2007-07-27 | 2013-07-02 | Hitachi Metals, Ltd. | Acceleration sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100422697C (en) | 2008-10-01 |
| JP3642054B2 (en) | 2005-04-27 |
| CN1841072A (en) | 2006-10-04 |
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