JP2003279484A - Fine particle detection method, fine particle detection device, fine particle manufacturing device, fine particle manufacturing program, storage medium and solid-state component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fine particle detection method, a fine particle detection device, a fine particle manufacturing device and a fine particle manufacturing program capable of easily grasping a formation state of fine particles included in a substance at a low cost. <P>SOLUTION: A sample 104 is irradiated with light 102 of a certain wavelength emitted from a light source 101, and light intensity of reflected light 105 reflected by the sample 104 is measured by a light intensity meter 106. Since the fine particles in the sample 104 are detected based on the light intensity, the formation state of the fine particles in the sample 104 can be easily grasped at a low cost. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a method for detecting fine particles,
The present invention relates to a particle detection device, a particle production device, a particle production program, a recording medium, and a solid-state element.

[0002]

2. Description of the Related Art Conventionally, as a method of detecting ultrafine metal particles present in glass transparent to visible light, there is a method of measuring the transmittance of visible light in glass.

More specifically, as shown in FIG. 9, visible light 902 emitted from a light source 901 is applied to a glass 904 via a first optical system 903. Then, the transmitted light 905 transmitted through the glass 904 becomes the second light.
And enters the light intensity meter 906 via the optical system 913. The transmittance of the visible light 902 in the glass 904 is measured based on the output of the light intensity meter 906. At this time, if metal fine particles are present in the glass 904, the transmittance of light of a specific wavelength is reduced.

Therefore, it can be determined whether or not the metal fine particles are present in the glass 904 depending on whether or not the transmittance of the light having the specific wavelength is lowered. The specific wavelength varies depending on the metal species of the metal fine particles.

[0005]

In recent years, research has been conducted on forming fine particles of nano-order in an oxide film on a semiconductor substrate and accumulating charges in the fine particles to operate a memory. A means for easily grasping the condition is required. However, since the semiconductor substrate does not transmit visible light, it is not possible to grasp the formation state of fine particles in the oxide film by the conventional method of measuring the transmittance of visible light as shown in FIG. As a result, there is a problem that the formation state of the fine particles in the oxide film can be grasped only by an expensive and troublesome method such as TEM (transmission electron microscope) observation.

Therefore, an object of the present invention is to provide a fine particle detection method and a fine particle detection apparatus which can easily and inexpensively grasp the formation state of fine particles contained in a substance.

Another object of the present invention is to provide a particle production apparatus provided with the above particle detection apparatus and a particle production program.

Still another object of the present invention is to provide a recording medium in which the above-mentioned fine particle production program is stored, and a solid element provided with fine particles produced by using the fine particle production apparatus.

The light in this specification is not limited to visible light and includes electromagnetic waves unless otherwise specified.

[0010]

In order to achieve the above object, the method for detecting particles according to the present invention is formed on a substrate which is impermeable to light of a certain wavelength, and to the light of the above wavelength. A fine particle detection method for detecting fine particles present in a transparent substance, the step of irradiating the substance with light of the wavelength from a side opposite to the side facing the substrate, and light of the wavelength of the substance. Is measured from the incident side of the light in the direction opposite to the incident direction to detect the fine particles.

According to the method of detecting fine particles having the above structure, the substance is irradiated with light having a constant wavelength from the side opposite to the side facing the substrate. Then, the light intensity of the light emitted from the light incident side of the substance in the direction opposite to the light incident direction is measured. This light intensity changes according to the change in the formation state of the fine particles in the substance. Therefore, by measuring the light intensity, it is possible to easily and inexpensively grasp the formation state of the fine particles in the substance.

Further, since the detection of the fine particles is performed based on the light intensity of the light emitted from the substance toward the side opposite to the side facing the substrate, the substance does not have to be destroyed. Therefore, it is not necessary to perform special processing on the substance in order to detect the fine particles, and it is possible to quickly grasp the formation state of the fine particles.

In the fine particle detection method of one embodiment, the substance is an insulator, and the fine particles are conductive.

In the particle detecting device of the present invention, a substance containing particles is formed and holding means for holding a substrate that is impermeable to light of a fixed wavelength, and the fixed wavelength toward the substance. And a light intensity measuring means for measuring the light intensity of the light emitted in a direction opposite to the incident direction from the side on which the light of the constant wavelength of the substance is incident. There is.

According to the particulate matter detection device having the above structure, the light source emits light of a constant wavelength toward the substance. And
The light intensity measuring means measures the light intensity of the light emitted from the side on which the light of a constant wavelength of the substance is incident in the direction opposite to the incident direction. The light intensity changes according to the change in the formation state of fine particles in the substance. Therefore, by measuring the light intensity, it is possible to easily and inexpensively grasp the formation state of the fine particles in the substance.

Further, since the detection of the fine particles is carried out based on the light intensity of the light emitted from the substance toward the side opposite to the side facing the substrate, it is not necessary to destroy the substance. Therefore, it is not necessary to perform special processing on the substance in order to detect the fine particles, and it is possible to quickly grasp the formation state of the fine particles.

Further, if there is the above-mentioned particle detecting device, for example, it is possible to inspect whether or not the particles are formed in the substance anywhere, and to inspect all industrial products using the particles quickly and accurately. be able to.

The particulate matter detection device of one embodiment comprises a difference calculation means for calculating the difference between the light intensity of the light emitted from the light source and the light intensity of the light emitted from the substance.

According to the particle detection device of the above embodiment,
The reflectance of the substrate is obtained by calculating the difference between the light intensity of the light emitted from the light source and the light intensity of the light emitted from the substance by the difference calculating means. When the formation state of the fine particles is judged based on this reflectance, it is possible to suppress the occurrence of fine particle detection error even if the light intensity of the irradiation light to the substance fluctuates due to the fluctuation of the output of the light source.

The particulate matter detection device of one embodiment comprises a first light guide means for guiding the light emitted from the light source to the substance, and a second light guide means for guiding the light emitted from the substance to the light intensity measuring means. And a guide means.

According to the particulate matter detection device of the above embodiment,
Since the first light guiding means guides the light emitted from the light source to the substance, the degree of freedom in the arrangement of the light source can be improved.

Further, since the second light guiding means guides the light emitted from the substance to the light intensity measuring means, the degree of freedom of arrangement of the light intensity measuring means can be improved.

In the particulate matter detection apparatus of one embodiment, the light source emits light of a plurality of different wavelengths, and the light intensity measuring stage measures the light intensity of the light of the plurality of wavelengths for each wavelength.

According to the particle detection device of the above embodiment,
Since the light source emits light having a plurality of different wavelengths, it is possible to detect a plurality of fine particles having different materials even if the wavelength of light capable of detecting the fine particles differs depending on the material of the fine particles.

Further, since the light emitted from the substance toward the side opposite to the side facing the substrate is measured by the light intensity measuring means for each wavelength, even if a plurality of fine particles having different materials are mixed in the substance, The plurality of fine particles can be detected.

Further, since the light intensity measuring stage can measure the light intensity of light of a plurality of different wavelengths for each wavelength, even if the wavelength of the light emitted from the light source deviates to some extent, the wavelength of the light is You can immediately recognize the deviation.
Therefore, it is possible to minimize the detection error of the fine particles.

In order to achieve the above-mentioned other objects, the apparatus for producing fine particles of the present invention is characterized by comprising the fine particle detecting apparatus and a fine particle forming means for forming the fine particles in the substance. There is.

According to the apparatus for producing fine particles having the above structure, fine particles are formed in the substance while grasping the formation state of the fine particles. Therefore, the fine particles can be accurately formed in the substance.

In the fine particle manufacturing apparatus of one embodiment, the fine particle forming means performs at least one of ion implantation treatment and heat treatment.

According to the fine particle production apparatus of the above embodiment,
Since the fine particle forming means performs at least one of the ion implantation treatment and the heat treatment, it is possible to grasp the formation state of the fine particles of the substance while performing the fine particle formation by the ion implantation or the heat treatment.

In the fine particle manufacturing apparatus of one embodiment, the first storage means for storing the light intensity of the light emitted from the substance toward the side opposite to the side facing the substrate, and the first storage means. A process starting means for starting a fine particle forming process for forming the fine particles in the substance when it is determined that the fine particles need to be formed in the substance based on the light intensity stored in A second storage means for storing the light intensity of light emitted from the substance during the fine particle formation process toward a side opposite to the side facing the substrate; and the second storage means stored in the first storage means. Light intensity and the second
Comparing means for comparing the light intensity stored in the storage means of, and the determination means for determining whether or not the formation state of the fine particles is a desired formation state based on the comparison result of the comparison means. I have it.

According to the fine particle production apparatus of the above embodiment,
By repeating the determination means, the formation state of the fine particles can be repeatedly confirmed.

Further, if the above-mentioned judging means judges that the formation state of the fine particles is not the desired formation state, the fine particle formation process for forming the fine particles is continued while the formation state of the fine particles is the desired formation state. If yes,
The fine particle forming process for forming fine particles is completed.
As a result, the fine particles can be formed very accurately, and the fine particles can be produced with good yield.

In order to achieve the above-mentioned other objects, the fine particle manufacturing program of the present invention is such that the computer is formed on a substrate which is impermeable to light of a certain wavelength, and
First storage means for storing the light intensity of light emitted from a substance that is transparent to the light of the wavelength toward the side opposite to the side facing the substrate, and stored in the first storage means When it is determined that it is necessary to form fine particles in the substance based on the obtained light intensity, a treatment starting means for starting a fine particle forming treatment for forming the fine particles in the substance, and the fine particles. Second storage means for storing the light intensity of light emitted from the substance being processed toward the side opposite to the side facing the substrate; and the light intensity stored in the first storage means. , Comparing the light intensity stored in the second storage means with the comparison result of the comparison means and determining whether or not the formation state of the fine particles is a desired formation state. It is characterized by making it function as a judgment means. To have.

According to the fine particle manufacturing program having the above structure, the formation state of the fine particles can be repeatedly confirmed by repeating the determination means.

If the determination means determines that the formation state of the fine particles is not the desired formation state, the fine particle formation process for forming the fine particles is continued, while the formation state of the fine particles is the desired formation state. If yes,
The fine particle forming process for forming fine particles is completed.
As a result, the fine particles can be formed very accurately, and the fine particles can be produced with good yield.

Further, in order to achieve the above still another object, the recording medium of the present invention is characterized by storing the above-mentioned fine particle manufacturing program.

According to the recording medium having the above structure, since the above-mentioned fine particle manufacturing program is stored, the steps of the fine particle manufacturing program can be quickly reproduced.

Further, by providing the above-mentioned recording medium in, for example, an apparatus for producing fine particles, it is possible to automatically detect and form fine particles.

Further, in order to achieve the above still another object, the solid-state element of the present invention is characterized by comprising the fine particles produced by using the fine particle producing apparatus.

Since the solid-state element having the above-mentioned structure manufactures fine particles using the above-mentioned fine-particle manufacturing apparatus, it is possible to reduce variations in the state of formation of fine particles in the solid-state element.

Further, since the fine particles are produced by using the fine particle producing apparatus, it is possible to form the fine particles with high accuracy and suppress the generation of defective products due to the fine particles. As a result, it becomes possible to provide an inexpensive and high-quality solid-state element.

[0043]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the method for detecting fine particles of the present invention,
The particle detection device and the particle production device will be described in detail with reference to the illustrated embodiment.

(Embodiment 1) FIG. 1 is a block diagram showing the configuration of the main part of a particle detection device according to Embodiment 1 of the present invention.

The above-mentioned particle detecting device comprises a light source 101 for emitting a light 102 having a constant wavelength toward a sample 104, and a light intensity meter 106 as a light intensity measuring means for measuring the light intensity of a reflected light 105 from the sample 104. Is equipped with.
Although not shown, the sample 104 is held by a holder as a holding means. Further, the particulate matter detection device includes a calculator (not shown) as difference calculation means. This calculator calculates the difference between the light intensity of the light 102 emitted from the light source 101 and the light intensity of the reflected light 105 reflected by the sample 104.

The light source 101 is about 1.5 eV to about 4.0 eV.
It is possible to emit light in a wider range than the range of eV (about 820 nm to 310 nm in wavelength). That is, the light source 101 can emit light in the range of at least about 1.5 eV to about 4.0 eV. The light 102 emitted from the light source 101 is guided to the optical system 103 as the first and second light guiding means and is incident on the sample 104. Then, a part of the light 102 incident on the sample 104 is reflected to become reflected light 105. The reflected light 105 is guided to the optical system 103 and enters the light intensity meter 106. The optical system 103 is composed of a lens, a prism, a mirror, a filter, and the like.

The following samples (1) to (3) are used as the sample 104.

The sample (1) is a silicon substrate which is an example of a substrate that is impermeable to the light 102 having a constant wavelength, and the light 102 having a constant wavelength formed on the silicon substrate.
And a thermal oxide film, which is an example of a substance permeable to. This thermal oxide film is not subjected to ion implantation treatment or heat treatment for forming fine particles. That is, fine particles do not exist in the thermal oxide film.

Sample (2) was obtained by implanting a relatively small amount of silver ions into sample (1) into the thermal oxide film and then applying Ar.
It is heat-treated at 600 ° C. in an atmosphere.

Sample (3) is obtained by implanting a relatively large amount of silver ions in Sample (1) into the thermal oxide film and then heat-treating at 600 ° C. in an Ar atmosphere.

As described above, the sample (1) before the implantation of silver in, the sample (2) in which the implantation amount of silver ions was relatively small, and the sample (2) in which the implantation amount of silver ions was relatively large were sampled. Used as 104.

FIG. 2 shows the light reflection characteristics of the sample 104. The graph line 201 in FIG. 2 shows the difference between the light reflectance obtained from the sample (1) and the light reflectance obtained from the sample (2). Also, the graph line 202 of FIG.
Shows the difference between the light reflectance obtained from sample (1) and the light reflectance obtained from sample (3).

As shown in FIG. 2, the graph line 202 has a large decrease in light reflectance in the vicinity of about 2.8 eV (wavelength of about 440 nm) as compared with the graph line 201.

In FIG. 3A, the implantation amount of silver ions is relatively large.
A TEM image of a small number of samples is shown in Fig. 3 (b).
4 shows a TEM image of a sample having a relatively large ON injection amount.
That is, the TEM image of FIG. 3 (a) is that of sample (2).
And the TEM image of FIG. 3 (b) is that of sample (3).
Is. In addition, in FIGS. 3A and 3B, 301,
311 is a silicon substrate, and 302 and 312 are SiO 2.₂In layers
is there. The portions indicated by 303 and 313 are the sample surface.
And the portions indicated by 304 and 314 are SiO 2. ₂/ Si
Corresponds to the interface.

As shown in FIG. 3A, in the sample in which the amount of implanted silver ions is relatively small, only a small amount of fine silver particles 305 are formed in the SiO ₂ layer 302. On the other hand, as shown in FIG. 3B, in the sample in which the implantation amount of silver ions is relatively large, a large amount of silver fine particles 315 are formed in the SiO ₂ layer 312.

From FIGS. 2 and 3A and 3B, SiO ₂
If a large amount of fine silver particles 315 are formed in the layer 312, the light reflectance of about 2.8 eV is obtained in the SiO ₂ layer 302.
It can be seen that compared to the case where a small amount of silver fine particles 305 are formed in the inside, it is greatly reduced. As described above, data indicating the formation state of the silver fine particles 305 and 315 can be obtained from the light reflection characteristics of the sample 104. Therefore, by observing the light reflectance properties of the sample 104, the silver particles 305 in the SiO ₂ layer 302, 312,
It is possible to determine whether or not 315 exists, and it is possible to easily and inexpensively determine the formation state of the silver particles 305 and 315.

Since the detection of the silver fine particles 305 and 315 is obtained from the light reflection characteristics of the sample 104, it is not necessary to destroy the sample 104. Therefore, it is not necessary to perform special processing on the sample 104 to detect the silver fine particles 305 and 315.
The formation state of 05 and 315 can be grasped quickly.

In the first embodiment, the fine silver particles are detected. However, if the emission wavelength range of the light source 101 is sufficiently widened, the fine metal particles such as Au and Cu and the fine semiconductor particles such as Si can be detected. It can be performed by the same method as in the first embodiment. That is,
The fine particle detection method of the present invention may be used for detecting conductive fine particles, semiconductor fine particles, and insulating fine particles.

When it is desired to detect only specific fine particles, if the material of the fine particles is known, the light source 101 may emit only light of a specific wavelength suitable for detecting the fine particles of that material. For example, the light source 101 is about 2.5 eV to about 3.5 e for detecting fine silver particles.
V, about 1.5 eV to about 3.0 eV for detecting copper fine particles, and about 2.0 eV to about 3.0 for gold fine particles.
Only light with a specific wavelength within the range of eV should be emitted.

When the light source 101 emits only the light of the specific wavelength, the light intensity meter 106 may measure only the light intensity of the light of the specific wavelength. The light source 1
When 01 emits only the light of the specific wavelength and the light intensity meter 106 measures only the light intensity of the light of the specific wavelength, the light source 101 and the light intensity meter 106 are inexpensive, and the fine particles The cost for manufacturing the detection device can be kept low.

The light source 101 may emit light of different wavelengths. In this case, various fine particles can be detected by detecting the light intensity of the reflected light 105 for each wavelength with the light intensity meter 106.

The light source 101 may be one that continuously oscillates or one that pulse-oscillates.

From the viewpoint of detecting the peak of the decrease in light reflectance, the wavelength of the light emitted from the light source 101 is preferably a continuous wavelength.

Further, if the inspection system for producing fine particles carries out the method for detecting fine particles of the present invention, the fine particles can be easily detected and inspected nondestructively. Furthermore, since it is non-destructive, it is possible to perform all inspections and it is excellent in reliability. Therefore, compared to the conventional method of observing a cross section by a sampling inspection, it is more reliable and requires less labor,
Excellent throughput.

Further, in the first embodiment, the fine particles are detected by using the electromagnetic waves in the visible light region, but the fine particles may be detected by using the electromagnetic waves outside the visible light region.

(Embodiment 2) FIG. 4 is a schematic diagram showing a structure of a main part of a particle production apparatus according to Embodiment 2 of the present invention. In this fine particle manufacturing apparatus, the same fine particle detection apparatus as in the first embodiment is assembled in an ion implantation apparatus so that fine particles can be detected during ion implantation.

The fine particle manufacturing apparatus of the second embodiment will be described in detail below.

The above-mentioned fine particle production apparatus uses the light 41 having a constant wavelength.
Silicon substrate 4 which is an example of a substrate impermeable to 5
01 for accommodating 01, a beam transport pipe 411 connected to the upper portion of the ion implantation chamber 410, and a first and second light guide means arranged on the side of the beam transport pipe 411. First and second optical waveguides 412 and 41
3 and 3. A thermal oxide film 402, which is an example of a substance that is transparent to the light 415 having a constant wavelength, is formed on the silicon substrate 401. This thermal oxide film 40
2 is obtained by thermal oxidation.

The beam transport tube 411 transports the ions 414 from the ion source (not shown) to the ion implantation chamber 410. In addition, the beam transport ship 411 is made up of ions 414.
Are provided so as to be incident almost perpendicularly to the surface of the thermal oxide film 402.

The first optical waveguide 412 guides the light 415 emitted from a light source (not shown) to the thermal oxide film 402. The light 415 guided to the thermal oxide film 402 by the first optical waveguide 412 is obliquely incident on the surface of the thermal oxide film 402.

The second optical waveguide 413 guides the reflected light 416 reflected by the silicon substrate 401 to a light intensity meter (not shown). The reflected light 416 travels in the direction of the thermal oxide film 4.
02 is oblique to the surface.

Hereinafter, the processing performed by the above-mentioned fine particle manufacturing apparatus will be described.
This will be described with reference to the flowchart of FIG.

First, the silicon substrate 401 before the process for forming fine particles in the thermal oxide film 402, that is, before the fine particle forming process is housed in the ion implantation chamber 410 and used as a holding means in the ion implantation chamber 410. It is held in place by the substrate holder (not shown).

Thereafter, as shown in FIG. 8, step S5
1, the light 415 is applied to the silicon substrate 401 before the fine particle formation processing, and the reflected light 4 from the silicon substrate 401 is emitted.
Store 16 data. Specifically, the light intensity of the light emitted from the thermal oxide film 402 before the fine particle formation process toward the side opposite to the side facing the silicon substrate 401 is stored.

Next, in step S52, the fine particle forming process is started. Specifically, when it is determined that it is necessary to form fine particles in the thermal oxide film 402 based on the light intensity stored in step S51, the thermal oxide film 402 is formed.
A fine particle forming process for forming fine particles therein is started. Here, when it is determined that the number of fine particles formed in the thermal oxide film 402 is 0, the fine particle forming process is started.

Next, in step S53, the light 415 is applied to the silicon substrate 401 during the fine particle formation process, and the data of the reflected light 416 from the silicon substrate 401 is stored. Specifically, the thermal oxide film 40 during the fine particle forming process.
The light intensity of the light emitted from 2 toward the side opposite to the side facing the silicon substrate 401 is stored.

Next, in step 54, step S
The data stored in 51 is compared with the data stored in step S53. That is, the light intensity of the reflected light 416 stored in step S51 is compared with the light intensity of the reflected light 416 stored in step S53.

Next, in step 55, based on the comparison result of step S54, an increase / decrease in the light intensity of the wavelength component corresponding to the fine particles to be formed is detected, and from this increase / decrease in the light intensity the formation state of the fine particles is detected. judge. That is, the formation state of silver fine particles is determined by the same method as that of the first embodiment based on the light intensity of the reflected light 416 in the wavelength region that increases and decreases when the silver fine particles are formed in the thermal oxide film 402.

Next, when it is determined in step 56 that the formation of fine particles is sufficient, the process proceeds to step 58, and the fine particle forming process is ended. That is, when it is determined that the formation state of the fine particles is a desired formation state, the implantation of silver ions into the thermal oxide film 402 is completed.

On the other hand, if it is determined in step 56 that the fine particles are not sufficiently formed, that is, the fine particle formation state is not the desired formation state, the process proceeds to step S57. Then, after continuing the fine particle forming process in step S57, steps S53 to S56 are sequentially performed again.

Here, step S51 constitutes first storage means, step S52 constitutes processing start means, step S53 constitutes second storage means, step S54 constitutes comparison means, and steps S55 and S56 constitute judgment means.

In the conventional ion implantation apparatus, although the implantation time can be determined, the implantation conditions such as the ion implantation energy and the implantation current fluctuate and fine particles cannot be formed with good reproducibility. On the other hand, the fine particle manufacturing apparatus according to the second embodiment can grasp the time when the desired fine particles are formed even if the ion implantation conditions are slightly changed. Therefore, by stopping the ion implantation at that time, It is possible to accurately produce fine particles having a desired morphology.

Further, since the formation state of the fine particles is determined in step S56, the processing can be accurately finished when the fine particles are formed in a specific state, and the reproducibility is excellent.

In addition, just before taking out the silicon substrate 401 from the ion implantation chamber 410, if it is found that the formation state of the fine particles is different from the desired formation state, the additional treatment is immediately performed. Since it is possible to improve the yield and shorten the inspection process, it is possible to improve the throughput.

Further, in the second embodiment, the fine particle manufacturing apparatus in which the same fine particle detecting apparatus as in the first embodiment is assembled in the ion implantation apparatus is used, but as shown in FIG. A particle production apparatus in which the same particle detection apparatus as in No. 1 is assembled in a heat treatment apparatus may be used.

The apparatus for producing fine particles shown in FIG.
A heat treatment chamber 610 for accommodating a silicon substrate 601 which is an example of a substrate impermeable to 15 and a heat treatment chamber 61.
0, the first and second optical waveguides 61 provided on the upper side in the figure
2, 613. A thermal oxide film 602, which is an example of a substance that is transparent to the light 615 having a constant wavelength, is formed on the silicon substrate 601. The thermal oxide film 602 is obtained by thermal oxidation and contains fine silver particles.

The first optical waveguide 612 guides the light 615 emitted from a light source (not shown) to the silicon substrate 601. The light 615 emitted from the light source obliquely enters the surface of the thermal oxide film 602.

The second optical waveguide 613 guides the reflected light 616 reflected by the silicon substrate 601 to a light intensity meter (not shown). The traveling direction of the reflected light 616 is oblique to the surface of the thermal oxide film 602.

According to the apparatus for producing fine particles of FIG. 6, a silicon substrate 601 having a thermal oxide film 602 containing fine silver particles formed on its surface is housed in a heat treatment chamber 610, and a substrate holder (not shown) in the heat treatment chamber 610 is housed. ) Holds the silicon substrate 601. When the silicon substrate 601 is heat-treated, silver atoms are aggregated or diffused depending on the temperature of the heat treatment, and silver fine particles are formed or disappear.

Therefore, similarly to the second embodiment, the heat treatment is performed on the silicon substrate 601 while grasping the formation state of the silver fine particles, and at least one of the heat treatment temperature and the heat treatment time is changed to specify. When the silver fine particles are obtained, the heat treatment is terminated, and the silver fine particles are formed with good reproducibility. That is, it prevents the formation state of the silver fine particles from being different from the desired formation state by the heat treatment.

Further, the apparatus for producing fine particles of the present invention may be an apparatus for forming fine particles, other than the ion implantation apparatus and the heat treatment apparatus, to which the same fine particle detection apparatus as in the first embodiment is assembled. .

Further, the fine particle manufacturing apparatus of the present invention may be provided with a recording medium storing a fine particle manufacturing program which causes the computer to function as the means shown in steps S51 to S56.

In step S52 of the second embodiment, the fine particle forming process is started when it is determined that the number of fine particles formed in the thermal oxide film 402 is 0. The fine particle forming process may be started when it is determined that the number of fine particles formed in (1) is less than or equal to a predetermined number.

(Embodiment 3) FIG. 7 is a schematic view showing the structure of the main part of a fine particle production apparatus according to Embodiment 3 of the present invention. In this fine particle manufacturing apparatus, a particle detecting apparatus similar to that of the first embodiment is attached to an ion implantation apparatus so that fine particles can be detected even during ion implantation. Compared to the particle manufacturing apparatus of FIG. 4, the above-described particle manufacturing apparatus has an incident angle of ions 714 on the surface of the thermal oxide film 702, an incident angle of light 715 on the surface of the thermal oxide film 702, and a surface of the silicon substrate 701. The reflection angle of the reflected light 716 is different.

The fine particle producing apparatus of the third embodiment will be specifically described below.

The above-mentioned fine particle manufacturing apparatus uses light 71 having a constant wavelength.
Silicon substrate 7 which is an example of a substrate impermeable to 5
Ion implantation chamber 710 accommodating 01, a beam transport pipe 711 connected to the upper portion of the ion implantation chamber 710, and a first and second light guide means arranged on the side of the beam transport pipe 711. And an optical waveguide 712. On the silicon substrate 701, the light 715 with a certain wavelength is
A thermal oxide film 702 which is an example of a material permeable to is formed. This thermal oxide film 702 is obtained by thermal oxidation.

The beam transport tube 711 transports ions 714 from an ion source (not shown) to the ion implantation chamber 710. Further, the beam transport tube 711 is provided so that the ions 714 are obliquely incident on the surface of the thermal oxide film 702.

The optical waveguide 712 is a light source (not shown).
Guides the light 715 emitted to the thermal oxide film 702 and guides the reflected light 716 reflected by the silicon substrate 701 to a light intensity meter (not shown). Further, the optical waveguide 712 is provided so that the light 715 from the light source enters substantially perpendicularly to the surface of the thermal oxide film 702.

The fine particle producing apparatus having the above-described structure has the same effect as that of the fine particle producing apparatus of FIG. 4, and the light 715 from the light source is made incident on the surface of the thermal oxide film 702 substantially perpendicularly. The light intensity of the reflected light 716 becomes strong, and the formation state of the fine particles can be grasped more accurately.

Further, since the fine particles can be formed in the thermal oxide film 702 while grasping the formation state of the fine particles with higher precision, the fine particles can be reproduced with higher precision, and finer fine particles can be obtained. Can be formed.

FIG. 8 shows a modification of the fine particle manufacturing apparatus of the third embodiment. The fine particle manufacturing apparatus of this modification is one in which the same fine particle detecting apparatus as in Embodiment 1 is assembled in a heat treatment apparatus. Further, in the above-described fine particle manufacturing apparatus, the incident angle of the light 815 to the thermal oxide film 802 and the reflected light 8 to the thermal oxide film 802 are different from those of the fine particle manufacturing apparatus of FIG.
The reflection angle of 16 is different.

The fine particle manufacturing apparatus shown in FIG.
A heat treatment chamber 810 for accommodating a silicon substrate 801 which is an example of a substrate impermeable to 15 and the heat treatment chamber 81.
0, and an optical waveguide 812 provided on the upper side in the figure. On the silicon substrate 801, a thermal oxide film 80, which is an example of a substance that is transparent to the light 815 having a constant wavelength, is formed.
2 is formed. The thermal oxide film 802 is obtained by thermal oxidation and contains fine silver particles.

The optical waveguide 812 is a light source (not shown).
Guides the light 815 emitted by the device to the silicon substrate 801, and guides the reflected light 816 reflected by the silicon substrate 801 to the light intensity meter. Further, the optical waveguide 812 is provided so that the light 815 from the light source enters substantially perpendicularly to the surface of the thermal oxide film 802.

According to the apparatus for producing fine particles of FIG. 8, the same effect as that of the apparatus for producing fine particles of FIG. 6 is obtained, and the light 815 from the light source is made incident on the surface of the thermal oxide film 802 almost perpendicularly. As a result, the light intensity of the reflected light 816 is increased, and the formation state of the fine particles can be grasped more accurately.

Further, since the fine particles can be formed in the thermal oxide film 802 while grasping the formation state of the fine particles with higher precision, the fine particles can be reproduced with higher precision, and finer fine particles can be obtained. Can be formed.

In the above-described second and third embodiments, there are various relationships between the ion implantation chamber and the heat treatment chamber (hereinafter, the ion implantation chamber and the heat treatment chamber are simply referred to as “treatment chambers”) and the entrance and exit of light. However, for example, when it is desired to detect fine particles from various positions and directions with respect to a substrate being processed for forming fine particles, it is preferable to make the light inlet and outlet of the processing chamber movable without fixing. In this case, a region (window) made of a substance that transmits light used for particle detection is provided in at least two locations on the outer wall of the processing chamber, and light is incident through the region or through the region. Take out reflected light. By doing so, it becomes possible to detect fine particles from various directions while keeping the environment of the processing chamber constant, which is excellent in mobility and is preferable.

Further, as another example of the fine particle manufacturing apparatus,
Fix the light entrance and exit to the processing chamber to prevent the external environment from affecting the substrate to be processed, or
It is conceivable to extend the doorway inward and provide it near the substrate to be processed. In this way, a signal (light) from other than the substrate, for example, light diffusely reflected by the substrate or the inner wall of the processing chamber is not detected, and noise may be added to the signal for grasping the formation state of fine particles. Can be suppressed. That is, the S / N ratio can be improved, and the accuracy of grasping the shape state of the fine particles can be improved.

The solid element provided with the fine particles manufactured by such a fine particle manufacturing apparatus has very little variation in the state of formation of the fine particles and is excellent in reliability.

If, for example, fine particles are formed in the gate insulating film by using the above-mentioned fine particle manufacturing apparatus to form a solid-state element for performing a memory operation, the operation margin at the time of integration is reduced and reliability is improved. Excel.

Further, since there are few variations in the performance of the solid-state element, multi-valued memory can be easily realized.

The substrate used in the method of detecting particles according to the present invention may be any substrate that is non-transparent to light of a certain wavelength, such as a sapphire substrate, an SOI (silicon on insulator) substrate, a semiconductor. It may be a substrate or the like.

The substance to be inspected by the method for detecting fine particles of the present invention may be any substance that is transparent to light of a certain wavelength, and may be, for example, an insulator other than a thermal oxide film.

Further, the fine particle detection method of the present invention can detect micro-order fine particles as well as nano-order fine particles.

[0114]

As is clear from the above, the method for detecting fine particles of the present invention detects fine particles in a substance based on the intensity of light emitted from the substance to the side opposite to the side facing the substrate. The formation state of the fine particles inside can be easily grasped at low cost.

Further, since the detection of the fine particles is performed based on the light intensity of the light emitted from the substance toward the side opposite to the side facing the substrate, special processing is required to detect the fine particles. It is not necessary to apply it to the substance, and it is possible to quickly grasp the formation state of the fine particles.

In the fine particle detector of the present invention, the intensity of the light emitted from the substance to the side opposite to the side facing the substrate is measured by the light intensity measuring means. Therefore, the fine particles in the substance are detected based on the light intensity. Thus, the formation state of the fine particles in the substance can be easily grasped at low cost.

Further, since the detection of the fine particles is carried out based on the light intensity of the light emitted from the substance toward the side opposite to the side facing the substrate, special processing is required for detecting the fine particles. It is not necessary to apply it to the substance, and it is possible to quickly grasp the formation state of the fine particles.

In the fine particle detection device of one embodiment, the difference between the light intensity of the light emitted from the light source and the light intensity of the light emitted from the substance is calculated by the difference calculation means, so that the reflectance of the substrate can be obtained. You can

Further, when the formation state of the fine particles is judged based on the above reflectance, it is possible to suppress the occurrence of fine particle detection error.

In the particle detecting device of one embodiment, the light emitted from the light source is guided to the substance by the first light guiding means, so that the degree of freedom of the arrangement of the light source can be improved.

Since the light emitted from the substance is guided to the light intensity measuring means by the second light guiding means, the degree of freedom in arranging the light intensity measuring means can be improved.

In the particle detecting apparatus of one embodiment, since the light source emits light having a plurality of different wavelengths, a plurality of particles having different materials can be used even if the wavelength of light capable of detecting the particles is different for each material. Can be detected.

Further, since the light emitted from the substance toward the side opposite to the side facing the substrate is measured by the light intensity measuring means for each wavelength, even if a plurality of fine particles having different materials are mixed in the substance, The plurality of fine particles can be detected.

Further, since the light intensity measuring stage can measure the light intensity of light having a plurality of different wavelengths for each wavelength, even if the wavelength of the light emitted from the light source is slightly shifted for some reason, the wavelength of the light is Immediately recognizing the deviation, it is possible to minimize the detection error of the particles.

The fine particle producing apparatus of the present invention comprises the fine particle detecting apparatus and a fine particle forming means for forming fine particles in the substance. By forming the fine particles, the fine particles can be accurately formed in the substance.

In the fine particle manufacturing apparatus of one embodiment, since the fine particle forming means performs at least one of the ion implantation process and the heat treatment, the fine particle formation state of the substance is grasped while performing the fine particle formation by the ion implantation or the heat treatment. can do.

The fine particle production apparatus of one embodiment repeatedly performs the determination means for determining whether or not the formation state of the fine particles is the desired formation state based on the comparison result of the comparison means. Can be checked repeatedly.

Further, since it is judged by the judging means whether or not the formation state of the fine particles is a desired formation state, the fine particle forming process is continued or ended depending on the formation state of the fine particles, and the fine particles are very accurately formed. Fine particles can be formed with good yield.

The fine particle production program of the present invention determines the fine particle formation state by repeatedly performing the determination means for determining whether or not the fine particle formation state is the desired formation state based on the comparison result of the comparison means. You can check repeatedly.

Further, since it is judged by the judging means whether or not the formation state of the fine particles is a desired formation state, the fine particle forming process is continued or ended depending on the formation state of the fine particles, and the fine particles are very accurately formed. Fine particles can be formed with good yield.

Since the recording medium of the present invention stores the above-mentioned fine particle manufacturing program, the steps of the fine particle manufacturing program can be quickly reproduced.

Further, by providing the above recording medium in, for example, an apparatus for producing fine particles, fine particles can be detected automatically.

In the solid-state element of the present invention, since the fine particles are produced by using the above-mentioned fine-particle producing apparatus, it is possible to reduce the variation in the formation state of the fine particles of the solid element.

Further, since the fine particles are produced by using the fine particle producing apparatus, the fine particles are formed with high precision, the generation of defective products due to the fine particles is suppressed, and the product price can be reduced. The quality can be improved.

[Brief description of drawings]

FIG. 1 is a block diagram showing a configuration of a main part of a particle detection device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a graph of light reflection characteristics of a sample used in the method for detecting fine particles of the present invention.

FIG. 3 (a) is a diagram showing a TEM image with a relatively small amount of implanted silver ions, and FIG. 3 (b) is a diagram showing a TEM image of a sample with a relatively large amount of implanted silver ions. Is.

FIG. 4 is a schematic diagram showing a configuration of a main part of a fine particle production apparatus according to a second embodiment of the present invention.

FIG. 5 is a diagram showing a flow chart for explaining a process of the fine particle manufacturing apparatus of the second embodiment.

FIG. 6 is a diagram showing a configuration of a main part of a modified example of the fine particle manufacturing apparatus according to the second embodiment.

FIG. 7 is a schematic diagram showing a configuration of a main part of a fine particle production apparatus according to a third embodiment of the present invention.

FIG. 8 is a schematic diagram showing a configuration of a main part of a modified example of the fine particle manufacturing apparatus according to the third embodiment.

FIG. 9 is a diagram for explaining a conventional particle detection method.

[Explanation of symbols]

101 Light source 102, 415, 615, 715, 815 Light emitted from light source 104 Sample 105, 416, 616, 716, 816 Reflected light 106 Light intensity meter 401, 601, 701, 801 Silicon substrate 402, 602, 702, 802 Heat Oxide film

Continued front page    (72) Inventor Nobutoshi Arai             22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka             Inside the company (72) Inventor Hiroshi Tsuji             3-12-6 Ishiyama-dera, Otsu City, Shiga Prefecture (72) Inventor Junzo Ishikawa             2-chome, Ogano Nishikagamiyacho, Nishikyo-ku, Kyoto City, Kyoto Prefecture             No. 9, No. 10, Building No. 101 F-term (reference) 2G059 AA05 BB09 BB16 CC02 CC03                       EE02 GG08 HH01 HH02 HH03                       HH06 JJ02 JJ11 JJ12 JJ13                       JJ17 MM01 MM10                 4M106 AA01 CA41 DB01 DJ20

Claims (12)

[Claims] 1. A fine particle detection method for detecting fine particles present in a substance which is formed on a substrate impermeable to light of a certain wavelength and is transparent to light of the above wavelength. Irradiating the substance with light of the wavelength from the side opposite to the side facing the substrate, and the light intensity of light emitted in the direction opposite to the incident direction from the side of the substance on which the light of the wavelength is incident. And the step of detecting the above-mentioned fine particles. 2. The fine particle detection method according to claim 1, wherein the substance is an insulator, and the fine particles are conductive. 3. A holding means for holding a substrate formed of a substance containing fine particles and impermeable to light of a constant wavelength, and a light source for emitting the light of the constant wavelength to the substance. And a light intensity measuring means for measuring the light intensity of the light emitted from the side of the substance on which the light of the constant wavelength is incident in the direction opposite to the incident direction. 4. The particle detection device according to claim 3, further comprising a difference calculation means for calculating a difference between the light intensity of the light emitted from the light source and the light intensity of the light emitted from the substance. A particle detection device characterized by: 5. The particle detection device according to claim 3 or 4, wherein first light guiding means for guiding the light emitted from the light source to the substance, and light intensity measuring means for the light emitted from the substance. And a second light guiding unit for guiding the light to the particle detecting device. 6. The particle detection device according to claim 3, wherein the light source emits light of a plurality of different wavelengths, and the light intensity measuring stage is configured to detect the light of the plurality of wavelengths. A particle detection device characterized by measuring light intensity for each wavelength. 7. A fine particle production apparatus comprising the fine particle detection device according to claim 3 and a fine particle forming means for forming the fine particles in the substance. 8. The fine particle production apparatus according to claim 7, wherein the fine particle forming means performs at least one of ion implantation treatment and heat treatment. 9. The fine particle production apparatus according to claim 7, further comprising a first storage unit that stores the light intensity of light emitted from the substance toward the side opposite to the side facing the substrate. When it is determined that it is necessary to form the fine particles in the substance based on the light intensity stored in the first storage unit, a fine particle forming process for forming the fine particles in the substance is performed. Processing start means for starting, second storage means for storing the light intensity of light emitted from the substance during the fine particle formation processing toward the side opposite to the side facing the substrate, and the first storage Comparison means for comparing the light intensity stored in the means with the light intensity stored in the second storage means, and based on the comparison result of the comparison means, the formation state of the fine particles is desired. Determine if it is in a state Particle manufacturing apparatus characterized by comprising a that judging means. 10. A computer is formed on a substrate that is impermeable to light of a certain wavelength, and is on the side opposite to the side facing the substrate from a substance that is transparent to the light of the wavelength. Based on the first storage means for storing the light intensity of the light radiated toward it and the light intensity stored in the first storage means, it is determined that it is necessary to form fine particles in the substance. Sometimes, a process starting means for starting the fine particle forming process for forming the fine particles in the substance, and light emitted from the substance in the fine particle forming process toward a side opposite to the side facing the substrate. Second storage means for storing the light intensity of the above, and comparison means for comparing the light intensity stored in the first storage means with the light intensity stored in the second storage means, Based on the comparison result of the comparison means, Microparticles manufacturing program, characterized in that the formation state of the particles to function as determination means for determining whether or not the desired formation state. 11. A recording medium on which the fine particle manufacturing program according to claim 10 is stored. 12. A solid-state device comprising the fine particles manufactured by using the apparatus for manufacturing fine particles according to claim 6.