JP2003266398A - Method of manufacturing surface nanoscale structure by electronic excitation atom movement - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To develop a new nanoscale processing/manufacturing technology for the next-generation industry which has a spatial resolution from a nanoscale to an atomic level scale and provides large area processing in a short time and mass production technology. <P>SOLUTION: On a surface of a semiconductor, an oxide, an organic crystal, or an ionic crystal, for example, by means of local doping by a convergence ion implantation, electric field application by atomic level in-depth probing using a scanning type tunneling microscope, or by using the electric field effect by means of a gate, a hole dope area and an electronic dope area are created locally, and the areas are electronically excited with a laser light, an emitted light and an electron ray so that the electronic excitation atom movement is limited to the local area of the nanoscale and atom release is induced. On the surface of the substance, atom deletion of the nanoscale structure, ultrafine quantum thin line drawing, two-dimensional super-structure, a quantum thin line, or a quantum dot can be performed or formed to provide the surface nanoscale structure and a quantum device. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to semiconductors, oxides,
The present invention relates to a method for producing a surface nanoscale structure by electron-excited atomic transfer on the surface of an organic crystal or an ionic crystal.

[0002]

2. Description of the Related Art In the conventional CMOS semiconductor manufacturing technology, 25
Nano-scale microfabrication technology is the limit at the laboratory level in 2001, and 100 nanometers as a mass production technology is the goal in the near future. In order to carry out nanoscale processing as an industrial technology at high speed and at low cost, the development of a completely new nanoprocessing technology has been required.

Moreover, with regard to silicon and its compounds or silicon oxide in the most important CMOS semiconductor technology in industry, the development of nanoscale fine processing technology is indispensable for building an advanced information society. Since it exceeds the limit, the development of such a new processing technology of nanoscale size was expected. As one method, a nano-scale fine processing technique is known in which atoms are detached by using a probe of a scanning tunneling microscope (Japanese Patent Laid-Open No. 7-307312, Japanese Patent Laid-Open No. 11-340449, Japanese Patent Laid-Open No. Open 2001-7315).

[0004]

Nanoscale processing technology in which local atom movement is controlled by electronic excitation is industrially applied to next-generation production technology, advanced information and communication technology, high resolution spectroscopy, nanotechnology. It is expected to be applied to various industrial fields such as technology evaluation, processing technology, and quantum manipulation.

When electrons in a bound state are excited to an anti-bound state on the surface of a semiconductor, an oxide, an ionic crystal, an organic crystal or the like by electronic excitation such as laser light, synchrotron radiation, or electron beam excitation, atom dissociation occurs. The phenomenon that atoms can be deleted by using the conventional method has been known. However, since such atom detachment phenomenon occurs stochastically, uniform atom detachment on the surface is possible, but it could not be used for processing from ultrafine atomic level to nanoscale level. .

In order to apply it as a nanoscale size processing / manufacturing technology for next-generation electronics aiming at energy saving, ultrahigh speed, and ultrahigh density integration, it has a spatial resolution of nanoscale to atomic scale and is short. It is indispensable to develop nano-processing / manufacturing technology for next-generation industries that enables large-area processing in time and mass production technology.

[0007]

SUMMARY OF THE INVENTION The present inventors have proposed a semiconductor,
Atomic-level or nanoscale-sized atom removal on surfaces such as oxides, organic crystals, or ionic crystals,
As a manufacturing technology that enables nanoscale size processing by controlling atomic desorption, electron-excited atomic transfer is actively used, and in the real space region, it is controlled from the atomic level to several tens of nanometers in size. In addition, we have developed a surface nanostructure formation technology that enables ultra-high density integration.

[0008] The inventors of the present invention have studied the surface of semiconductors, oxides, ionic crystals, organic crystals, etc., and have electrons in a bonded state that contribute to bonding by electronic excitation by irradiation with laser light, synchrotron radiation, electron beams, or the like. Atomic elimination from the surface by electron-excited atomic transfer utilizing the weakening of the bond between these substances by exciting
It was found that the phenomenon of inducing atomic detachment and utilizing this can be used to locally control the phenomenon of detaching surface atoms at an arbitrary probability in the real space region and at the nanoscale from the atomic level.

The present inventors have found that the p-type surface of a semiconductor, an oxide, an ionic crystal, an organic crystal, or the like has a different degree of localization of holes localized in the valence band due to electronic excitation from the p-type surface. It was discovered that there is a large difference in atomic desorption due to electron excitation between the semiconductor surface and the n-type semiconductor surface, and these are due to the difference in electron chemical potential between the p-type semiconductor surface and the n-type semiconductor surface and the band structure deformation at the surface-vacuum interface. It was clarified that it is due to the Coulomb repulsion between the holes due to the difference in the localization of the holes.

The method of the present invention based on these discoveries forms p-type or n-type regions on the surface of semiconductors, oxides, ionic crystals, organic crystals, etc. with high spatial resolution, that is, in this region It can be used as a manufacturing technology for nanoscale ultrafine processing or nanoprocessing by inducing atom transfer by electronic excitation by irradiation with laser light, synchrotron radiation, or electron beam.

In order to enable an ultrahigh-speed nanofabrication technology having a spatial resolution on the nanometer scale to the atomic level, the method of the present invention has a focused ion implantation, a scanning tunneling microscope, and a local structure. P-type or n-type local doping is performed by using a local electric field applied by a gate, and the distance from the surface to the probe and the applied voltage are changed by applying an electric field by an atomic level probe of a scanning tunneling microscope. Thus, it is possible to specify the size of the p-type or n-type region on the surface.

In the method of the present invention, a hole-doped region or an electron-doped region is locally created by using the electric field effect of the gate, and electron excitation is performed in this region by laser light, synchrotron radiation, or an electron beam. As a result, electron-excited atomic transfer of surface atoms can be induced only in the nanoscale local region.

The method of the present invention is used for drawing ultrafine quantum wires with a nanoscale structure on the surface of semiconductors, oxides, ionic crystals, organic crystals, etc., for creating two-dimensional superstructures, quantum wires and quantum dots. We can create new surface nanoscale structures and new quantum devices.

Further, by utilizing the ultrafine quantum wire drawing of the nanoscale structure, the two-dimensional superstructure, the quantum wire and the quantum dot creation as described above, a heterogeneous metal or a heterogeneous semiconductor is subjected to molecular beam epitaxial growth in a region where an atom has been detached. Has enabled the development of new fabrication technologies for nanofabrication to create quantum devices that can be selectively grown and enable new quantum manipulations.

That is, each invention of the present invention comprises the following: (1) On the surface of a II-VI group compound semiconductor, a III-V group compound semiconductor, a IV group semiconductor, or an oxide thereof, p of nanoscale size is formed by local doping.
-Type or n-type region is created, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof, so that only atoms in the locally-doped region are deleted or released. A method for producing a surface nanoscale structure by electron-excited atomic transfer.

(2) II-VI compound semiconductor, III
-On the surface of a group V compound semiconductor, a group IV semiconductor, or an oxide thereof, by applying an electric field by an atomic level probe such as a scanning tunneling microscope, a nanoscale size region is p-type or A local region to be an n-type region is created, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof, so that only atoms in the locally doped region are deleted or released. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises:

(3) II-VI compound semiconductor, III
-By applying an electric field to the surface of a group V compound semiconductor, a group IV semiconductor, or an oxide thereof by an atomic level probe such as a scanning tunneling microscope, the distance from the surface and the applied voltage can be made to be nanoscale. By controlling the size of the region, a local region that is a p-type or n-type region of an arbitrary size is created, and this region is irradiated with laser light.
Surface nanoscale structure by electron-excited atom transfer characterized by forming a nanostructure of arbitrary size by electron-excited by synchrotron radiation, one of electron beam excitation, or a combination thereof to induce atom transfer Manufacturing method.

(4) Group II-VI compound semiconductor, III
By using the electric field effect of the gate on the surface of the group V compound semiconductor, the group IV semiconductor, or the oxide thereof, the size of the nanoscale region can be controlled by making the thickness of the insulating film and the gate voltage variable. A local region to be a p-type or n-type region of any size is created, and this region is electronically excited by laser light, synchrotron radiation, one of electron beam excitation, or a combination of these to generate a nano-sized region of any size. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a structure.

(5) A nanoscale p-type or n-type region is formed by local doping on the surface of an organic crystal or an ionic crystal, and this region is irradiated with laser light, synchrotron radiation,
A method for producing a surface nanoscale structure by electron-excited atom transfer, which is characterized in that only atoms in a locally-doped region are electronically excited by one of electron beam excitation or a combination thereof to remove and leave the atoms.

(6) On the surface of an organic crystal or an ionic crystal, a local region becomes a p-type or n-type region by the electric field by applying an electric field with an atomic level probe such as a scanning tunneling microscope. The electron-excited atoms are characterized in that this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof, and only the atoms in the locally-doped region are deleted or released. Method for producing surface nanoscale structures by transfer.

(7) On the organic crystal or ionic crystal surface, the size of the nanoscale region is increased by varying the distance from the surface and the applied voltage by applying an electric field with an atomic level probe such as a scanning tunneling microscope. Of the p-type or n-type region of any size by controlling the depth, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a nanostructure of arbitrary size by inducing transfer or atom desorption.

(8) The size of the nanoscale region is controlled by varying the thickness of the insulating film and the voltage applied to the gate by using the electric field effect of the gate on the surface of the organic crystal or the ionic crystal. A local region, which is a p-type or n-type region of arbitrary size, is created, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof to perform atom transfer, atom deletion, or atom removal. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises inducing atom detachment to form a nanostructure of an arbitrary size.

(9) ZnO, TiO ₂ , transition metal compounds and SrTiO
_{3 On the} surface of an oxide such as perovskite, a nanoscale p-type or n-type region is created by local doping, and this region is electronically excited by laser light, synchrotron radiation, electron beam excitation, or a combination thereof. A method for producing a surface nanoscale structure by electron-excited atom transfer, which is characterized by inducing atom deletion or atom release by atom transfer to delete only atoms in a locally doped region.

(10) ZnO, TiO ₂ , transition metal compounds and SrT
_On the oxide surface such as iO ₃ perovskite, by applying an electric field with an atomic level probe such as a scanning tunneling microscope, the nanoscale region is compared with other regions by the electric field.
Region is created as a n-type or n-type region, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof, and only atoms in the locally doped region are transferred by atom transfer. A method for producing a surface nanoscale structure by electron-excited atomic transfer, which is characterized by deleting and releasing.

(11) ZnO, TiO ₂ , transition metal compounds and SrT
_On the oxide surface such as iO ₃ perovskite, the size of the nanoscale region is controlled by varying the distance from the surface and the applied voltage by applying an electric field with an atomic level probe such as a scanning tunneling microscope. By creating a p-type or n-type local region of arbitrary size and inducing atomic transfer by electronically exciting this region with laser light, synchrotron radiation, electron beam excitation, or a combination thereof. , A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a nanostructure of any size.

(12) ZnO, TiO ₂ , transition metal compounds and SrT
_On the oxide surface such as iO ₃ perovskite, by using the electric field effect by the gate, the distance from the surface and the applied voltage can be made variable to control the size of the nanoscale region to control the p-type or n-type of any size. Create a local area to be a mold area, and use this area for laser light, synchrotron radiation,
A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a nanostructure of arbitrary size by inducing atom transfer by electron excitation by one of electron beam excitation or a combination thereof .

(13) On the surface of a semiconductor, an oxide, an organic crystal, or an ionic crystal, local doping, application of an electric field by an atomic level probe, or electric field effect by a gate is used to locally localize a hole-doped region or an electron. Create a doped region and use this region for laser light, synchrotron radiation,
By conducting electronic excitation with one of the electron beams or a combination thereof, the locally excited electron transfer of surface atoms is induced only in the local region of nanoscale size. 2. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a hyperfine quantum wire drawing, a two-dimensional superstructure, a quantum wire, or a quantum dot.

(14) On the surface of a semiconductor, an oxide, an organic crystal, or an ionic crystal, local doping, application of an electric field by an atomic level probe, or electric field effect by a gate is used to locally localize a hole-doped region or an electron. Create a doped region and use this region for laser light, synchrotron radiation,
Electron excitation by one or a combination of electron beams induces electron-excited atomic transfer of surface atoms only in the local region of nanoscale. Heterogeneous semiconductors such as different metal atoms and magnetic semiconductors by drawing a thin line, a two-dimensional superstructure, a quantum wire, or a quantum dot, and by removing the nanostructure region or the region where the atom is removed by molecular or atomic beam deposition or molecular beam epitaxy 2. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises selectively growing C to form a surface nanoscale structure or a quantum device.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION On a surface of a semiconductor, an oxide, an organic crystal, an ionic crystal, or the like, local doping by convergent ion implantation, electric field application by an atomic level probe of a scanning tunneling microscope, or local gate is performed. When a hole-doped region or an electron-doped region is locally created by using the electric field effect due to, the region is the surface, and the charge is redistributed on the surface, which causes the bending of the band structure. Therefore, on the n-type semiconductor surface, holes are likely to be accumulated in the vicinity of the surface, and when the host semiconductor is electronically excited, the holes are accelerated on the surface.

In the present invention, the II-VI group compound semiconductor is ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, etc., and the III-V group compound semiconductor is GaN, GaAs, GaP, G
aSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, etc.,
Group IV semiconductors are Si, Ge, C, etc. These oxides are meant.

FIG. 1 is a conceptual diagram showing an embodiment of the method of the present invention. As shown in FIG. 1A, p-type acceptor and n-type donor atoms are ion-implanted into the semiconductor substrate 1 by convergent ion implantation 2 to form a p-type or n-type region 3 on the surface. Next, as shown in FIG. 1B, this p-type or n-type region 3 is electronically excited by laser light irradiation 4 to remove only the atoms 5 of the p-type or n-type region and delete them. As a result, as shown in FIG. 1 (c),
The quantum holes 6 can be formed in the semiconductor substrate 1.

FIG. 2 is a conceptual diagram showing another embodiment of the method of the present invention. As shown in FIG. 2A, a gate 8 is formed behind the silicon substrate 1 with an oxide insulating film 7 interposed therebetween.
By forming a p-type or n-type region 3 on the surface by a gate voltage applied between the surface of the silicon substrate 1 and the gate 8 and detaching atoms by electronic excitation of the region 3 by laser light irradiation 4. As shown in 2 (b), nanoscale quantum holes 6 are prepared.

In such a system, when further electron excitation occurs, it is excited by light or electrons, and the introduced holes break the bond of atoms and promote the detachment of atoms.
This is a mechanism that generally occurs on the surface, but if such doping can be caused locally, even if uniform electron excitation by light is performed, atomic desorption occurs only from the locally doped region. .

To meet these conditions, local doping, electric field application by an atomic level probe, or electric field effect by a gate is locally used on the surface of a semiconductor, an oxide, an organic crystal, an ionic crystal, or the like. A hole-doped region or an electron-doped region is created, and electrons are excited to perform processing from the atomic level to the nanoscale level.

Electronic excitation of the locally doped region by laser light, synchrotron radiation, an electron beam, or a combination thereof can induce electron-excited atomic transfer of surface atoms only in the nanoscale local region. I can.

In particular, the present inventors have found that there is a large difference between the p-type semiconductor surface and the n-type semiconductor surface in the detachment of atoms by electronic excitation. Therefore, by locally doping, applying an electric field by an atomic level probe, or using a field effect by a gate, a hole-doped region or an electron-doped region is locally created, and when this region is electronically excited, a local hole-doped region is formed. And only in the electron-doped region,
Atomic detachment occurs.

Specific fields of application of the method of the present invention include the following fields. (1) Application to next-generation CMOS semiconductor manufacturing technology Although there is no established manufacturing technology of 50 nm or less in the current CMOS semiconductor manufacturing technology, the present invention can be applied to fine processing technology of nanometer-sized silicon-based semiconductors. Can be done. Since a wide range of applications to silicon and silicon oxides, transition metal oxides, silicon nitrides, etc. are possible in the present invention, they can be applied as actual semiconductor manufacturing processes.

(2) Application to ultra-fine processing technology for semiconductor nano-spin electronic devices Energy saving (nano-joule) is achieved by positively utilizing the degree of freedom of spin different from the electric charge of electrons based on a semiconductor. / Write / read cycle), ultra-high speed (nanosecond / write / read cycle), ultra-high-density integration can be applied as a manufacturing technology necessary for a revolutionary new layer of spin electronics industry.

In the current CMOS semiconductor manufacturing technology, energy is consumed in milli-joules / writing / reading, and rewriting / reading has a large energy consumption of milliseconds / cycle to microseconds / cycle, and slow writing / reading. Although it has reached the limit to the advanced information society due to time, since the semiconductor nano spin electronics can be realized by this manufacturing technology, these limits can be greatly improved. It can be applied to nanoscale-sized semiconductor spin electronics by using the nanoscale processing method by controlling the irradiation time of electronic excitation and the spatial resolution control.

(3) Application to the creation of qubits for quantum computers In order to produce qubits for quantum computation, nano-scale quantum dots and nano-fabrication of gates, sources, and drains for controlling them are indispensable. However, at least for practical calculation, it is indispensable to fabricate a quantum computer of 1000 qubits or more, but for nanoscale processing, the surface nanomachining technique by electronic excitation according to the present invention is indispensable, and the solid state according to the present invention. Industrial applications of semiconductor-based quantum computers can be opened.

(4) Application to Quantum Wiring Quantum wiring from the nanoscale to the atomic level requires quantum wiring that positively utilizes a low resistance ballistic scattering mechanism. Is possible,
It will become an indispensable technology for the wiring of devices that are based on the control of quantum devices with new functions, quantum interference effects, and quantum spin coherence, and open up great applications.

(5) Biochip processing technology and creation For a biochip in which heme proteins, DNA, etc. are arranged on a semiconductor substrate, nanoscale size microfabrication / combination of quantum wiring and biomolecule functions is indispensable. The surface nano-processing technology by electronic excitation according to the present invention is an indispensable technical element for industrial application to biochips.

(6) Local Scanning Atomic Absorption Spectroscopy By combining atomic desorption with a local atom deletion method and atomic spectroscopy on a semiconductor surface, an oxide surface, a metal surface, or an ionic crystal surface, it is possible to obtain local Scanning atomic spectroscopy is possible, and atomic desorption and atomic deletion are possible while having nanoscale spatial resolution. By combining these with atomic absorption analysis, it can be applied to atomic absorption spectroscopy with nanoscale resolution.

(7) Diagnosis of ultra-high-integrated nanostructured magnetic memory, combined use of spectroscopic mass spectrometry and atomic absorption spectrometry, and combined use of atomic spectroscopy also enable spectroscopic analysis and diagnosis of magnetic materials having nanostructures. , Industrial applications to spectroscopic techniques for direct observation of magnetic domain structures such as ultra-fine magnetic domain structures, ultra-high-density magnetic memory, and magnetic random access memory (MRAM) can be opened.

(8) Application to quantum communication by manipulating quantum states in superstructures such as quantum dots This is applied to quantum calculation using spin, which is another degree of freedom different from the charge possessed by electrons. Spin carries information because it can take only two states, upward and downward, in terms of quantum mechanics. In order to control these, atomic transfer by electron excitation is used to fabricate a quantum communication device in which quantum dots are arranged and the number and direction of individual spins contained in them are controlled.

[0046]

[Example] (Example 1) Nanostructure processing method by electric field application by STM (scanning tunneling microscope) probe and laser light excitation As shown in Fig. 3 (a), between the silicon semiconductor 1 and the STM probe 9 When an electric field is applied to the surface 1A of the silicon semiconductor 1 by applying a gate voltage (Vg) to the holes, holes gather on the surface. By changing the distance (h) from the surface 1A of the silicon semiconductor 1 to the tip 9A of the STM probe and the gate voltage, the region of the electric field applied to the surface 1A of the silicon semiconductor 1 can be changed. Applying a positive voltage between the silicon semiconductor 1 and the STM probe 9 makes the surface 1A of the silicon semiconductor 1 n-type, and applying a negative voltage makes the surface 1A of the silicon semiconductor 1 p-type. You can

Under such conditions, when the surface 1A of the silicon semiconductor 1 is electronically excited by the laser light irradiation 4, the atoms 5 are detached by the electronic excitation only in the local region to which the electric field 10 is applied. Atom deletion within the size occurs, and quantum holes 6 are created as shown in FIG. By keeping the power of the laser beam constant and increasing the gate voltage, the depth of the quantum holes 6 formed by the detached atoms becomes deep.

Further, when the distance (h) between the surface 1A of the silicon semiconductor 1 and the tip 9A of the STM probe 9 is shortened while keeping the power of the laser light and the gate voltage constant, the range of atoms to be detached is reduced, The quantum hole 6 becomes deep.

FIG. 8 is a graph showing the relationship between the number of atoms released by laser excitation and the laser power. The detached atoms have a non-linear dependence proportional to the square of the laser power or more. Both the n-type and the p-type show constant curves regardless of their electric resistance values. There is a large difference in the number of dissociated atoms between n-type silicon and p-type silicon, and the n-type has a large number of holes on the surface, and thus has a high atomic bond breaking speed. Since the p-type has few holes on the surface, the bond breaking speed of atoms is low. It can be seen from FIG. 8 that the relationship between the laser light power and the number of detached atoms is not linear but depends nonlinearly on the square of the optical power or more, and thus two photons are related to the atom detachment mechanism.

That is, a hole localized in a bonding orbital on the surface of the silicon semiconductor 1 is formed by the first excitation, and a repulsive force of the hole introduced by the next excitation or a hole localized in two or more bonds is bonded. It shows that it is torn.

Further, as shown in FIG. 4, by the electron excitation by the laser beam and the p-type or n-type local selectivity by the STM (scanning tunneling microscope) probe, the atomic desorption in the designated region is promoted. , As shown in FIG. 4 (a), the quantum narrow groove 11, as shown in FIG. 4 (b), the quantum circle 12, FIG.
As shown in, the quantum dot lattice 13 can be manufactured.

As shown in FIG. 2 and FIG. 4 (c), a scanning tunneling microscope that specifies a local region is scanned by local electron excitation, and an electric field is applied only at a place where a hole is to be formed. Electrons are excited to induce atomic transfer, and quantum holes of nanoscale size can be regularly arranged from the atomic level. The size and depth of the quantum holes can be controlled by changing the applied gate voltage and the distance (h) from the surface to the probe.

Example 2 Production of Quantum Dots Made of Magnetic Semiconductor and Magnetic Quantum Dots on Semiconductor Substrate First, as shown in FIG.
On the surface of MBE, and then as shown in FIG. 5 (b), MBE
Metal atoms 14 are vapor-deposited in the quantum holes 6 by (molecular beam epitaxial crystal growth apparatus) to produce a quantum dot lattice made of a metal magnetic material 15, as shown in FIG. 5 (c).

On the surface of the compound semiconductor substrate 1 made of GaAs, GaN, or the like, quantum holes 6 in which only Ga atoms 5 were released were prepared by the method of Example 1, and transition metal atoms Mn14 were vapor-deposited by the MBE apparatus. Since Mn can be deposited only in the quantum holes 6 whose surface is composed of As or N, the ferromagnetic quantum dots 1 composed of MnAs or MnN
5 could be produced on the semiconductor substrate 1.

As shown in FIG. 6, ferromagnetic quantum dots 1
5 is a ferromagnetic thin film 16, a quantum well 17, a back gate 18
A quantum device using the bistability of the magnetization direction of the magnetic substance can be manufactured by regularly arranging the semiconductor substrate 1 on which the magnetic layers are formed. The magnetization direction of the ferromagnetic quantum dots 15 is controlled by the current. These confinement potentials are controlled by the voltage applied to the electrode 19 having a rounded tip.
By controlling the potential in the quantum dots by the voltage, it is possible to control the spread of the wave function of electrons and spins, and thus it is possible to control the wave function of electrons and the phase of spins between the arranged quantum dots.

As a result, quantum computation becomes possible by forming a quantum entangled state due to a quantum interaction such as exchange interaction between different quantum dots. As a result of the quantum calculation, an electromagnetic wave is introduced from the needle-shaped electrode 20 having a sharp tip, and its spin state is read by electron spin resonance.

Example 3 Production of Metal Quantum Wires on Semiconductor Substrate Electron excitation by laser light and local selectivity by p-type or n-type by STM probe promote atomic desorption in a designated region. , Quantum linear groove, quantum circular groove, quantum square groove, MBE (Molecular Beam Epitaxial Crystal Growth Equipment)
Metal atoms are vapor-deposited by using a quantum wire 21 made of a magnetic metal as shown in FIG. 7A, a quantum metal ring 22 as shown in FIG. 7B, and a quantum metal ring 22 as shown in FIG. 7C. Then, the quantum metal square dots 23 are produced.

Quantum grooves are formed in the compound semiconductor substrate 1 such as GaAs or GaN by scanning with the probe 9 according to the method of the first embodiment. MBE for these quantum grooves
When Mn or Cu which is a transition metal atom is vapor-deposited by an apparatus, since the Mn or Cu atom can be vapor-deposited only in the quantum groove whose surface is composed of As or N, a quantum wire made of Mn or Cu, a quantum metal, Alternatively, the quantum metal square dots could be formed on the semiconductor substrate 1.

[0059]

[Effects of the Invention] Conventionally, mass production as semiconductor manufacturing technology,
Since nanotechnology processing technology that can be used for high-speed processing has not been obtained, nanoscale size CM
There was a limit to the OS semiconductor processing technology.

The method for creating a surface nanoscale structure by electron-excited atom transfer according to the present invention can be applied to the next-generation semiconductor manufacturing technology of nanoscale size, and further, the degree of freedom of spin of the semiconductor nanospin electronics and the like is positively applied. For future quantum electronics,
It is possible to create a new spin electronics device or a quantum device by a new quantum manipulation using a nanoscale structure ultrafine quantum wire drawing, a two-dimensional superstructure, a quantum wire or a quantum dot.

As fields used for industrial application of surface nanostructure processing technology by electronic excitation, application to next-generation semiconductor production technology using nanotechnology, quantum information processing device, quantum communication technology, spectroscopy, nanotechnology Various industrial applications such as quantum manipulation become possible.

The development of such nanoscale size quantum devices and nanostructure processing technology enables energy-saving, ultra-high-speed, and ultra-high-density integrated circuits, and in the development of new devices for realizing an advanced information society. We can provide available manufacturing technology.

[Brief description of drawings]

FIG. 1 is a conceptual diagram showing an embodiment of a method of the present invention.

FIG. 2 is a conceptual diagram showing another embodiment of the method of the present invention.

FIG. 3 is a conceptual diagram showing a method of Example 1.

FIG. 4 (a) Quantum microgrooves produced by the method of Example 1;
It is a conceptual diagram of (b) quantum circle and (c) quantum dot lattice.

FIG. 5 is a conceptual diagram showing a method of Example 2.

6 is a conceptual perspective view of a ferromagnetic quantum dot manufactured by the method of Example 2. FIG.

FIG. 7 (a) Quantum wire produced by the method of Example 3;
It is a conceptual diagram of (b) quantum metal ring, (c) quantum metal square dot.

FIG. 8 is a graph showing the relationship between the number of atoms released by laser excitation and the laser power.

[Explanation of symbols]

1 Semiconductor substrate 1A Surface of semiconductor substrate 2 ion implantation 3 n-type or p-type region 4 Laser light irradiation 5 atoms 6 quantum holes 7 Oxide insulation film 8 gates 9 STM probe 9A STM tip 10 electric field 11 Quantum narrow groove 12 quantum circles 13 Quantum dot lattice 14 metal atoms 15 Ferromagnetic quantum dots 16 Ferromagnetic thin film 17 quantum wells 18 back gate 19 Electrode with rounded tip 20 Needle-shaped electrode with a sharp tip 21 Quantum wire 22 Quantum metal ring 23 Quantum metal square dots

Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 29/20 H01L 29/20 29/22 29/22 29/26 29/26 29/66 29/66 Z

Claims (14)

[Claims] 1. A II-VI group compound semiconductor, III-V
A nanoscale p-type or n-type region is created by local doping on the surface of a group compound semiconductor, a group IV semiconductor, or an oxide thereof, and this region is one of laser light, synchrotron radiation, and electron beam excitation, Alternatively, a method for producing a surface nanoscale structure by electron-excited atomic transfer is characterized in that only atoms in a locally-doped region are deleted or released by electronically exciting them by a combination thereof. 2. A II-VI group compound semiconductor, III-V
On the surface of a group compound semiconductor, a group IV semiconductor, or an oxide thereof, a nanoscale size region is p-type or n-type compared to other regions by an electric field applied by an atomic level probe such as a scanning tunneling microscope. Create a local area to be an area, and use this area for laser light, synchrotron radiation,
A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises removing and leaving only atoms in a locally-doped region by electron-exciting by one of electron beam excitation or a combination thereof. 3. A II-VI group compound semiconductor, III-V
By applying an electric field to the surface of a group compound semiconductor, a group IV semiconductor, or an oxide of these by an atomic level probe such as a scanning tunneling microscope, the distance from the surface and the applied voltage can be varied so that the nanoscale region The size of the region is controlled to create a local region of p-type or n-type of any size, and this region is electronically excited by laser light, synchrotron radiation, electron beam excitation, or a combination of these. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a nanostructure of an arbitrary size by inducing atom transfer. 4. A II-VI group compound semiconductor, III-V
By using the electric field effect of the gate on the surface of the group compound semiconductor, the group IV semiconductor, or the oxide thereof, the size of the nanoscale region can be controlled by varying the thickness of the insulating film and the gate voltage. A local region that becomes a p-type or n-type region of a size is created, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof to form a nanostructure of any size. A method for producing a surface nanoscale structure by electron-excited atom transfer characterized by forming. 5. A nanoscale p-type or n-type is formed by local doping on the surface of an organic crystal or an ionic crystal.
An electron characterized by creating a type region and electronically exciting this region with one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof to delete or release only atoms in the locally doped region. Method for producing surface nanoscale structure by excited atom transfer. 6. A local region, which becomes a p-type or n-type region in the nanoscale region by an electric field by applying an electric field by an atomic level probe such as a scanning tunneling microscope, on the surface of an organic crystal or an ionic crystal. make,
This area is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination of these, and only the atoms in the locally doped area are deleted or released, so that the surface nanoparticle is formed by electron-excited atomic transfer. Manufacturing method of scale structure. 7. The size of a nanoscale region on the surface of an organic crystal or an ionic crystal is made variable by applying an electric field by an atomic level probe such as a scanning tunneling microscope to change the distance from the surface and the applied voltage. A local region to be a p-type or n-type region of any size is created by controlling the temperature, and this region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination of these to move atoms. And a method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises inducing atomic desorption and forming a nanostructure of an arbitrary size. 8. The size of the nanoscale region is controlled by varying the thickness of the insulating film and the voltage applied to the gate by using the electric field effect of the gate on the surface of the organic crystal or the ionic crystal, thereby controlling the size of the nanoscale region. Create a local region that is a p-type or n-type region of the same size, and electronically excite this region with one of laser light, synchrotron radiation, electron beam excitation, or a combination of these to cause atom transfer, atom deletion, or atom A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises inducing detachment to form a nanostructure of any size. 9. A nanoscale p-type or n-type region is formed by local doping on an oxide surface such as ZnO, TiO ₂ , a transition metal compound or SrTiO ₃ perovskite.
This region is electronically excited by one of laser light, synchrotron radiation, electron beam excitation, or a combination of these to induce atom deletion or atom desorption by atom transfer and delete only the atoms in the locally doped region. A method for producing a surface nanoscale structure by electron-excited atomic transfer. 10. ZnO, TiO ₂ , transition metal compounds and SrTiO ₃
On an oxide surface such as perovskite, by applying an electric field with an atomic level probe such as a scanning tunneling microscope, a nanoscale region is created by the electric field to form a local region that becomes a p-type or n-type region, and this region is created. Electron-excited by laser light, synchrotron radiation, electron beam excitation, or a combination of these, and only the atoms in the locally-doped region are deleted or released by atom transfer. Manufacturing method of nanoscale structure. 11. ZnO, TiO ₂ , transition metal compounds and SrTiO ₃
On the oxide surface such as perovskite, by applying an electric field with an atomic level probe such as a scanning tunneling microscope, the distance from the surface and the applied voltage can be varied to control the size of the nanoscale region. By creating a p-type or n-type local region having a size of 1 μm and inducing atomic transfer by electronically exciting this region with one of laser light, synchrotron radiation, electron beam excitation, or a combination thereof. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming nanostructures of different sizes. 12. ZnO, TiO ₂ , transition metal compounds and SrTiO ₃
On the surface of an oxide such as perovskite, by using the electric field effect by the gate, the distance from the surface and the applied voltage can be varied to control the size of the nanoscale region, thereby controlling the p-type or n-type region of an arbitrary size. A nanostructure of any size is formed by creating a local region to be an electron and exciting this region by laser excitation, synchrotron radiation, electron beam excitation, or a combination thereof to induce atomic transfer. A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises: 13. On a semiconductor, oxide, organic crystal, or ionic crystal surface, local doping, electric field application by an atomic level probe, or electric field effect by a gate is used to locally localize a hole-doped region or an electron-doped region. By creating a region and performing electronic excitation on this region by laser light, synchrotron radiation, one of electron beams, or a combination thereof, local electron-excited atomic transfer of surface atoms can be performed in a local region of nanoscale size. The surface nanoscale structure by electron-excited atomic transfer characterized by forming ultrafine quantum wire drawing of nanoscale structure, two-dimensional superstructure, quantum wire, or quantum dot on the surface of the substance by inducing only Production method. 14. A hole-doped region or electron-doped region locally on a semiconductor, oxide, organic crystal, or ionic crystal surface by using local doping, application of an electric field by an atomic level probe, or electric field effect by a gate. Create a region and electronically excite this region with one of laser light, synchrotron radiation, electron beam, or a combination of these to induce electron-excited atomic transfer of surface atoms only in the nanoscale local region. To form a nanoscale ultrafine quantum wire drawing on the surface of the above substance, to form a two-dimensional superstructure, a quantum wire, or a quantum dot, and to remove a molecule or an atom beam in the removed nanostructure area or the area where the atom is removed. By selectively growing dissimilar semiconductors such as dissimilar metal atoms and magnetic semiconductors by molecular beam epitaxy, A method for producing a surface nanoscale structure by electron-excited atom transfer, which comprises forming a scale structure or a quantum device.