JP2003265951A - Method for manufacturing compact chemical reaction apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a compact chemical reaction apparatus having a catalyst layer formed in a minute flow passage formed on one side of a silicon substrate, in which the photoresist used for forming the catalyst layer in the flow passage is removed excellently without damaging the catalyst layer remaining in the flow passage. <P>SOLUTION: An opening 32 is formed at the position corresponding to the flow passage 22 on the photoresist 31 which is stuck to one side of the silicon substrate 21 and consists of a dry film. Next, the catalyst layer 23 is formed on the surface of the photoresist 31 including the inside surfaces of the passage 22 and the opening 32. After that, the photoresist 31 is peeled off and removed together with the unnecessary portion of the layer 23 formed on the surface of the photoresist 31. As a result, the photoresist 31 can be removed excellently without damaging the layer 23 remaining in the passage 22. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small chemical reactor and a method for manufacturing the same.

[0002]

2. Description of the Related Art In the technical field of chemical reaction, there is known a chemical reaction apparatus for producing a desired fluid substance by a chemical reaction (catalytic reaction) of a fluidized mixed substance by a catalyst provided in a channel. There is. Some of such conventional chemical reaction devices have a flow path of micron order or millimeter order formed on a silicon substrate by using a fine processing technology accumulated in a semiconductor manufacturing technology such as a semiconductor integrated circuit.

FIG. 11 is a transmission plan view of an example of such a conventional small-sized chemical reaction apparatus, and FIG. 12 is a sectional view taken along line BB thereof. This small chemical reactor comprises a small silicon substrate 1. Silicon substrate 1
On one surface, a meandering minute flow path 2 is formed by using the fine processing technology accumulated in the semiconductor manufacturing technology. A catalyst layer 3 is formed on the inner wall surface of the flow path 2. A glass plate 4 serving as a lid is bonded to one surface of the silicon substrate 1. An inflow port 5 and an outflow port 6 are formed at two predetermined positions corresponding to both ends of the flow path 2 of the glass plate 4.

A meandering thin film heater 7 is formed on the other surface of the silicon substrate 1. The thin film heater 7 supplies a predetermined amount of heat energy to the catalyst layer 3 in the flow path 2 when the chemical reaction (catalytic reaction) in the small-sized chemical reaction device involves an endothermic reaction under a predetermined thermal condition. It is a thing. On the other surface of the silicon substrate 1, a glass plate 8 having a recess 9 formed by spot facing at the center of the surface facing the other surface.
The peripheral part of is joined. The glass plate 8 not only protects the thin film heater 7, but also prevents thermal diffusion of the thin film heater 7,
This is for improving thermal efficiency. Further, the inside of the recess 9 is evacuated in order to enhance the heat insulating performance.

Next, an example of a method of manufacturing the channel 2 portion of the silicon substrate 1 of this small chemical reaction apparatus will be described. First, as shown in FIG. 13, a small silicon substrate 1
The meandering minute flow path 2 is formed on one surface by using the fine processing technology accumulated in the semiconductor manufacturing technology. Next, by patterning the photoresist applied to one surface of the silicon substrate 1 including the inside of the flow channel 2, the photoresist 11 having the opening 12 in the portion corresponding to the flow channel 2 is formed.

Next, as shown in FIG. 14, a catalyst layer 3 is formed on the surface of the photoresist 11 including the inside of the flow path 2 and the inside of the opening 12. Next, when the photoresist 11 is removed together with an unnecessary portion of the catalyst layer 3 formed on the surface thereof,
As shown in FIG. 15, the catalyst layer 3 remains only on the inner wall surface of the flow path 2. In this case, the removal of the photoresist 11 is
There is a method using a stripping solution or a method using oxygen plasma ashing.

Next, an example of use of the small chemical reaction device having the above structure will be described. For example, in recent years, in a small fuel reforming type fuel cell (small power generation type power source), which has been remarkably researched and developed for practical use, it is possible to obtain by evaporating (vaporizing) an aqueous methanol solution using the small chemical reaction device having the above configuration. Hydrogen (fuel for power generation) may be generated from the mixed gas (CH ₃ OH + H ₂ O) thus obtained.

That is, in a state where the inside of the flow path 2 is heated to a predetermined temperature by the heat generated by the thin film heater 7,
When the mixed gas (CH ₃ OH + H ₂ O) is supplied into the flow path 2 through the inflow port 5, an endothermic reaction is caused by the catalyst layer 3 in the flow path 2 and hydrogen and dioxide as a by-product are generated. Carbon is produced. Then, if carbon dioxide is separated from hydrogen in the product and removed, only hydrogen can be supplied to the small fuel cell as a fuel for power generation.

[0009]

By the way, in the above-mentioned conventional manufacturing method, when the stripping solution is used to remove the photoresist 11 together with the unnecessary portion of the catalyst layer 3 formed on the surface thereof, The catalyst layer 3 remaining on the inner wall surface of 2 may come into contact with the stripping solution and be damaged, and the catalyst layer 3 formed on the surface of the photoresist 11 interferes with the removal of the stripping solution up to the photoresist 11. However, there is a problem in that the photoresist 11 may not be removed satisfactorily without reaching the point. Further, when the photoresist 11 is removed by oxygen plasma ashing together with unnecessary portions of the catalyst layer 3 formed on the surface of the photoresist 11, the catalyst layer 3 formed on the surface of the photoresist 11 serves as a mask and plasma species There is a problem that the photoresist 11 may not be sufficiently reached and the photoresist 11 may not be removed well. Moreover, when printing using a metal mask is attempted in order to solve such a problem, it is difficult to apply the catalyst solution to the flow path surface of a fine pitch line and space required for a small chemical reaction apparatus. Therefore, it has been an obstacle to miniaturization of the chemical reaction device. Therefore, according to the present invention, the photoresist for forming the catalyst layer in the flow path of high-definition pitch can be satisfactorily removed without damaging the catalyst layer remaining in the flow path. It is an advantage to provide a method of manufacturing a chemical reactor.

[0010]

According to a first aspect of the present invention, a minute flow path is formed on one surface of a small substrate, and a photoresist made of a dry film is attached to one surface of the substrate. An opening is formed in a portion corresponding to the flow path, a catalyst layer is formed on the surface of the photoresist including the inside of the flow path and the inside of the opening, and the photoresist is an unnecessary portion formed on the surface. It is characterized in that it is peeled off and removed together with the catalyst layer. The invention according to claim 2 is characterized in that, in the invention according to claim 1, the width of the opening is made slightly smaller than the width of the flow path. According to a third aspect of the present invention, a photoresist made of a dry film is attached to one surface of a small substrate, and an opening is formed in a portion of the photoresist corresponding to one surface of the substrate corresponding to a minute flow path forming region. A minute flow path is formed on one surface of the substrate using the photoresist having the opening as a mask, and a catalyst layer is formed on the surface of the photoresist including the inside of the flow path and the opening, and the photoresist is formed. It is characterized in that it is peeled off and removed together with an unnecessary portion of the catalyst layer formed on the surface thereof. A fourth aspect of the invention is characterized in that, in the invention according to any one of the first to third aspects, the discum treatment is performed after the photoresist is peeled off and removed. According to a fifth aspect of the invention, in the invention according to the fourth aspect, the discum treatment is oxygen plasma ashing. According to a sixth aspect of the invention, in the invention according to any one of the first to fourth aspects, the substrate is a silicon substrate. The invention according to claim 7 is the invention according to claim 6, characterized in that the flow path is formed by a sandblast method. Further, according to the present invention, since a photoresist made of a dry film is used and the photoresist is peeled off and removed together with an unnecessary portion of the catalyst layer formed on the surface of the photoresist, the photoresist made of a dry film is used. Can be satisfactorily removed without damaging the catalyst layer remaining in the flow path.

[0011]

1 is a transparent plan view of a small chemical reaction apparatus as an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA. This small chemical reactor comprises a small silicon substrate 21. The dimensions of the silicon substrate 21 are, for example, about 25 mm in length, about 17 mm in width, and about 0.6 to 1 mm in thickness.
A fine meandering channel 22 is formed on one surface of the silicon substrate 21 by using the fine processing technology accumulated in the semiconductor manufacturing technology. The dimensions of the channel 22 are, for example, about 0.2 to 0.8 mm in width and about 0.2 to 0.6 mm in depth, and the total length is about 30 to 1000 mm.

A catalyst layer 23 is formed on the inner wall surface of the flow path 22. A glass plate 24 having a thickness of about 0.7 mm is joined to one surface of the silicon substrate 21 as a lid. An inflow port 25 and an outflow port 26 are formed at two predetermined positions corresponding to both ends of the flow path 22 of the glass plate 24.

TaSiOx is formed on the other surface of the silicon substrate 21.
A meandering thin film heater 27 made of a resistor thin film such as TaSiOxN or TaSiOxN is formed. The thin film heater 27 is for supplying a predetermined thermal energy to the catalyst layer 23 in the flow path 22 during a chemical reaction when the chemical reaction (catalytic reaction) in the small-sized chemical reaction device is accompanied by an endothermic reaction under a predetermined thermal condition. It is a thing. In this case, the meandering thin film heater 27
Does not match the meandering flow path 22 in a plane, but it may match. Further, the thin film heater 27 may be solid so as to cover the entire surface of the flow path 22.

On the other surface of the silicon substrate 21, a recess 29 is formed in the central portion of the one surface by counter boring to a thickness of 0.7.
The peripheral portion of the glass plate 28 having a size of about mm is joined. The glass plate 28 not only protects the thin film heater 27, but also prevents thermal diffusion of the thin film heater 27 and improves thermal efficiency. In addition, the inside of the recess 29 is evacuated in order to enhance the heat insulating performance.

Next, a first example of the method for manufacturing the small chemical reaction device will be described. First, as shown in FIG.
On one surface of a small silicon substrate 21, a fine flow path 2 that meanders is formed by using the fine processing technology accumulated in the semiconductor manufacturing technology.
Form 2. In this case, the flow path 22 may be formed by wet etching or dry etching, but is preferably formed by sandblasting. That is, the sandblast method has a high processing rate and the apparatus is relatively inexpensive.

Next, a photoresist 31 made of a dry film is attached to one surface of the silicon substrate 21. In this state, since the photoresist 31 is a dry film, the inside of the flow path 22 is hollow. Next, as shown in FIG. 4, the photoresist 31 is patterned to form an opening 32 in a portion of the photoresist 31 corresponding to the flow path 22. In this case, in FIG.
2, but the width of the opening 32 is the same as that of the flow path 22.
It is preferable to make it slightly smaller than the width. The reason will be described later.

Next, as shown in FIG. 5, the photoresist 31 including the inner wall surface of the flow path 22 and the inner wall surface of the opening 32.
The catalyst layer 23 is formed by applying a catalyst solution in which catalyst particles are dispersed in a solvent, or by a physical film forming method such as a sputtering method to the surface of the. next,
When the photoresist 31 and the unnecessary portion of the catalyst layer 23 formed on the surface thereof are peeled off and removed by mechanical force, the catalyst layer 23 remains only on the inner wall surface of the flow path 22, as shown in FIG. .

As described above, the photoresist 31 made of a dry film is used.
Is removed by mechanically peeling it together with the unnecessary portion of the catalyst layer 23 formed on the surface thereof, so that the photoresist 31 made of a dry film damages the catalyst layer 23 remaining in the flow path 22. Can be satisfactorily removed without giving.

By the way, when the photoresist 31 is peeled off by a mechanical force and a slight resist residue (scum) remains on one surface of the silicon substrate 21,
The resist residue is removed by a descum treatment such as oxygen plasma ashing. This is the silicon substrate 21
This is to ensure the later-described joining of the glass plate 24 to one surface.

Here, as shown in FIG. 3, the flow path 2 is formed on one surface.
A photoresist 31 made of dry fill is attached to one surface of the silicon substrate 21 on which the photoresist 2 is formed, and then the photoresist 31 is patterned as shown in FIG.
Since the opening 32 is formed in the portion of the photoresist 31 corresponding to the flow path 22, the opening 32 for the flow path 22 is formed.
The position of may shift. Therefore, as described above, if the width of the opening 32 is set to be slightly smaller than the width of the flow path 22, even if the position of the opening 32 with respect to the flow path 22 is deviated, the silicon substrate 21 in the vicinity of the flow path 22 can be formed. It is possible to prevent the catalyst layer 23 from remaining on one surface at all. This is to ensure the later-described joining of the glass plate 24 to the one surface of the silicon substrate 21 in the same manner as above.

Next, as shown in FIGS. 1 and 2, a meandering thin film heater 27 made of a resistor thin film such as TaSiOx or TaSiOxN is formed on the other surface of the silicon substrate 21. Next, a glass plate 24 having an inflow port 25 and an outflow port 26 formed by the sandblast method is prepared. In addition, the recess 2 is formed in the glass plate 28 by counter boring.
Prepare what formed 9.

Next, the glass plate 24 is superposed on one surface of the silicon substrate 21 and subjected to anodic bonding to bond the glass plate 24 to one surface of the silicon substrate 21. Further, the glass plate 28 is superposed on the other surface of the silicon substrate 21 and subjected to anodic bonding treatment, so that the silicon substrate 21
The glass plate 28 is joined to the other surface of the.

Here, as a representative, the anodic bonding process for bonding the glass plate 24 to one surface of the silicon substrate 21 will be described. The glass plate 24 is superposed on one surface of the silicon substrate 21, and the silicon substrate 21 side is used as an anode.
The side is the cathode. Then, with the silicon substrate 21 and the glass plate 24 being heated to about 400 to 600 ° C., a DC voltage of about 1 kV is applied between both electrodes.

Then, the cations, which are impurities in the glass plate 24, move away from the silicon substrate 21, and a layer having a high oxygen ion concentration appears at the interface of the glass plate 24 on the silicon substrate 21 side. Then, the silicon atoms at the interface of the silicon substrate 21 on the glass plate 24 side are bonded with the oxygen ions at the interface of the glass plate 24 on the silicon substrate 21 side, and a strong bonding interface is obtained.

In this case, the silicon substrate 21 and the glass plate 24 are heated to about 400 to 600 ° C. and the distance between the electrodes is 1 k.
The DC voltage of about V is applied in order to increase the speed at which cations, which are impurities in the glass plate 24, move in a direction away from the silicon substrate 21.

Next, a second example of the method of manufacturing the small chemical reaction device shown in FIGS. 1 and 2 will be described. First, as shown in FIG. 7, a photoresist 31 made of a dry film is attached to one surface of a small silicon substrate 21.
Next, as shown in FIG. 8, the photoresist 31 is patterned to form an opening 32 in a portion of the photoresist 31 corresponding to the flow path forming region. Next, as shown in FIG. 4, a meandering minute flow path 22 is formed on one surface of the silicon substrate 21 by a sandblast method using the photoresist 31 as a mask. The following is the same as in the case of the above first example, and therefore will be omitted.

By the way, in the case of the first example, in order to allow the positional displacement of the opening 32 with respect to the flow path 22, the width of the opening 32 must be made slightly smaller than the width of the flow path 22. However, it is complicated, and a photoresist pattern for forming the flow path 22 must be formed separately from the photoresist 31, resulting in a large number of steps.

On the other hand, in the case of the second example, as shown in FIG. 8, the photoresist 31 is patterned to form the opening 32 in the portion corresponding to the flow passage forming region of the photoresist 31. Then, the flow path 22 is formed on one surface of the silicon substrate 21 by the sandblast method using the photoresist 31 as a mask as shown in FIG. The positions can be exactly the same. Moreover, since the flow path 22 is formed using the photoresist 31 as a mask, the number of steps can be reduced.

Next, the case where the small chemical reaction device according to the present invention is applied to a small power generation type power source will be described. Figure 9
[Fig. 3] is a block diagram of a main part of a small power generation type power source. This small power generation type power source includes a fuel unit 41 and a fuel evaporation unit 4.
2, hydrogenation section 43, carbon monoxide removal section 44, power generation section 4
5, the charging unit 46 and the like. The fuel unit 41 is composed of a fuel pack or the like in which a power generation fuel (for example, an aqueous methanol solution) is enclosed, and supplies the power generation fuel (hereinafter, simply referred to as fuel) to the fuel evaporation unit 42.

The fuel evaporation section 42 has a structure as shown in FIGS. However, in this case, the flow path 22
The catalyst layer 23 is not formed therein. Further, instead of the silicon substrate 21, a glass substrate, an aluminum substrate or the like may be used. When the aqueous methanol solution from the fuel section 41 is supplied into the flow path 22 through the inflow port 25, the fuel evaporation section 42 heats the thin film heater 27 (about 120 ° C.) in the flow path 22. The aqueous methanol solution is evaporated (vaporized), and this vaporized mixed gas (CH
₃ OH + H ₂ O) is discharged from the outlet 26.

The mixed gas (C
H ₃ OH + H ₂ O) is supplied to the hydrogenation section 43. In this case, the hydrogenation section 43 also has a structure as shown in FIGS. However, in this case, the catalyst layer 23 is Cu /
It is made of ZnO / Al ₂ O ₃ or the like. A glass substrate or the like may be used instead of the silicon substrate 21.
Then, in the hydrogenation section 43, the mixed gas (CH ₃ OH + H ₂ O) from the fuel evaporation section 42 is passed through the flow inlet 22 through the inflow port 25.
When supplied to the thin film heater 2,
By heating 7 (about 280 ° C.), an endothermic reaction as shown in the following formula (1) is caused to generate hydrogen and a by-product carbon dioxide. CH ₃ OH + H ₂ O → 3H ₂ + CO ₂ (1)

Water (H ₂ O) on the left side of the above formula (1)
May be contained in the fuel of the fuel section 41 at the initial stage of the reaction, but it is possible to collect water generated by power generation of the power generation section 45 described later and supply it to the hydrogenation section 43. is there. The water (H ₂ O) supply source on the left side of the above formula (1) during power generation by the power generation unit 45 may be only the power generation unit 45,
The power generation unit 45 and the fuel unit 41, or only the fuel unit 41 may be used. At this time, carbon monoxide may be generated in the hydrogenation section 43, though the amount is small.

The product and carbon monoxide on the right side of the above formula (1) are discharged from the outlet 26 of the hydrogenation section 43. Among the products flowing out from the outlet 26 of the hydrogenation section 43, vaporized hydrogen and carbon monoxide are supplied to the carbon monoxide removal section 44, and carbon dioxide is separated and released into the atmosphere.

Next, the carbon monoxide removing portion 44 also has a structure as shown in FIGS. However, in this case, the catalyst layer 23 is made of Pt / Al ₂ O ₃ or the like.
A glass substrate or the like may be used instead of the silicon substrate 21. Then, the carbon monoxide removing unit 44 heats the thin film heater 27 (about 180 ° C.) when vaporized hydrogen and carbon monoxide from the hydrogenation unit 43 are supplied into the flow path 22 through the inflow port 25. ), Among the hydrogen, carbon monoxide, and water supplied into the flow path 22, carbon monoxide reacts with water, and as shown in the following formula (2), hydrogen and carbon dioxide as a by-product are reacted. And are generated. CO + H ₂ O → H ₂ + CO ₂ (2)

Water (H ₂ O) on the left side of the above formula (2)
In the initial stage of the reaction, may be contained in the fuel of the fuel unit 41, but it is possible to recover the water generated by the power generation of the power generation unit 45 and supply it to the hydrogenation unit 43. The water supply source on the left side of the equation (2) during power generation by the power generation unit 45 may be only the power generation unit 45, the power generation unit 45 and the fuel unit 41, or only the fuel unit 41.

Most of the fluid finally reaching the outlet 26 of the carbon monoxide removing section 44 is hydrogen and carbon dioxide. The outlet 2 of the carbon monoxide removing unit 44
When the fluid reaching 6 contains a very small amount of carbon monoxide, the remaining carbon monoxide is brought into contact with oxygen taken in from the atmosphere through the check valve to obtain the following formula (3). As shown in, carbon dioxide is produced, which ensures removal of carbon monoxide. CO + (1/2) O ₂ → CO ₂ …… (3)

The product after the above series of reactions is composed of hydrogen and carbon dioxide (containing a trace amount of water in some cases). Of these products, carbon dioxide is separated from hydrogen and released into the atmosphere. To be done. Therefore, only hydrogen is supplied from the carbon monoxide removing unit 44 to the power generation unit 45. The carbon monoxide removing section 44 may be provided between the fuel evaporating section 42 and the hydrogenating section 43.

Next, as shown in FIG. 10, the power generation section 45 comprises a well-known polymer electrolyte fuel cell. That is, the power generation unit 45 includes a cathode 51 including a carbon electrode to which a catalyst such as Pt / C is attached and an anode 52 including a carbon electrode to which a catalyst such as Pt / Ru / C is attached.
And a film-like ionic conductive film 53 interposed between the cathode 51 and the anode 52, and is composed of a secondary battery or a capacitor provided between the cathode 51 and the anode 52. Electric power is supplied to the charging unit 46.

In this case, a space 54 is provided outside the cathode 51. Hydrogen is supplied from the carbon monoxide removing unit 44 into the space 54. A space 56 is provided outside the anode 52. Oxygen taken from the atmosphere through the Shu valve is supplied into the space 56.

Then, on the cathode 51 side,
As shown in (4), from hydrogen to electrons (e ^-) Separated
Hydrogen ion (proton; H⁺) Occurs, and the ionic conductive film
It passes through 53 to the anode 52 side and
The electronic signal (e^-) Is taken out and the charging unit 46
Is supplied to. 3H₂→ 6H⁺+ 6e^-…… (4)

On the other hand, on the anode 52 side, the following equation (5)
As shown in, the electron (e ⁻ ) supplied through the charging unit 46 reacts with the hydrogen ion (H ⁺ ) passing through the ion conductive film 63 and oxygen to generate water as a by-product. . 6H ⁺ + (3/2) O ₂ + 6e ⁻ → 3H ₂ O (5)

The above series of electrochemical reactions (formula (4) and formula (5)) proceed in a relatively low temperature environment of about room temperature to 80 ° C., and by-products other than electric power are basically It is only water. The electric power generated by the power generation unit 45 is supplied to the charging unit 46, which charges the charging unit 46.

Water as a by-product produced in the power generation section 45 is recovered. In this case, as described above, if at least a part of the water generated in the power generation unit 45 is supplied to the hydrogenation unit 43, the amount of water initially sealed in the fuel unit 41 can be reduced, and The amount of water recovered can be reduced.

By the way, as the fuel applied to the fuel reforming type fuel cell currently being researched and developed, the power generation section 45 can generate electric energy with relatively high energy conversion efficiency. A fuel, for example, an alcohol-based liquid fuel such as methanol, ethanol, butanol, a liquid fuel composed of hydrogen that is vaporized at room temperature and atmospheric pressure such as liquefied gas such as dimethyl ether, isobutane, and natural gas (CNG), or A fluid substance such as a gaseous fuel such as hydrogen gas can be well applied.

It should be noted that the invention is not limited to the above-mentioned evaporative reforming reaction of the aqueous methanol solution, and at least a chemical reaction (endothermic reaction) that occurs under a predetermined heat condition can be favorably applied. Moreover, the fuel cell is not limited to the above fuel cell as long as it can generate electric power by using a predetermined fluid substance generated by a chemical reaction as a fuel for power generation.

Therefore, the dynamics of rotating the generator to generate electric power by using the thermal energy (temperature difference power generation) associated with the combustion reaction of the fluid substance generated by the chemical reaction or the pressure energy associated with the combustion reaction. Energy conversion (such as gas combustion turbines, rotary engines, Stirling engines, and external combustion engine power generation), and the power of fuel for power generation, such as fluid energy and heat energy, using the principle of electromagnetic induction. It is possible to use power generators having various forms such as those converted to (hydrodynamic power generation, thermoacoustic power generation, etc.).

[0047]

As described above, according to the present invention, a photoresist made of a dry film is used, and the photoresist is peeled off and removed together with an unnecessary portion of the catalyst layer formed on the surface of the photoresist. Therefore, the photoresist made of a dry film can be removed well without damaging the catalyst layer remaining in the flow channel.

[Brief description of drawings]

FIG. 1 is a transparent plan view of a small chemical reaction device as an embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA of FIG.

FIG. 3 is a first of the small-sized chemical reaction apparatus shown in FIGS. 1 and 2.
FIG. 6 is a cross-sectional view of an initial step in manufacturing the example of FIG.

FIG. 4 is a sectional view of a step following FIG. 3;

5 is a sectional view of a step following FIG. 4; FIG.

FIG. 6 is a sectional view of a step following FIG. 5;

FIG. 7 is a second of the small chemical reaction device shown in FIGS. 1 and 2.
FIG. 6 is a cross-sectional view of an initial step in manufacturing the example of FIG.

8 is a sectional view of a step following FIG. 7. FIG.

FIG. 9 is a block diagram of a main part of an example of a small power generation type power source including a small chemical reaction device according to the present invention.

10 is a schematic configuration diagram of a power generation unit of the small power generation type power source shown in FIG.

FIG. 11 is a transparent plan view of an example of a conventional small chemical reaction device.

12 is a cross-sectional view taken along the line BB of FIG.

13 is a sectional view of an initial step in manufacturing the small chemical reaction device shown in FIGS. 11 and 12. FIG.

FIG. 14 is a sectional view of a step following FIG. 13;

FIG. 15 is a sectional view of a step following FIG. 14;

[Explanation of symbols]

21 Silicon substrate 22 flow path 23 Catalyst layer 24 glass plate 25 Inlet 26 Outlet 27 Thin film heater 28 glass plate 29 recess 31 Photoresist 32 openings

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Satoshi Igarashi             6-3-5-111 Valley in Saitama City, Saitama Prefecture F term (reference) 4G075 AA03 AA13 AA39 BA10 BB02                       BC10 BD07 CA02 CA54 DA02                       EA02 EA05 EB01 EC06 FA05                       FB01 FB04 FB06 FC07                 4G140 EA01 EA02 EA03 EA06 EB48                 5H027 AA02 BA01

Claims (7)

[Claims] 1. A small channel is formed on one surface of a small substrate, a photoresist made of a dry film is attached to one surface of the substrate, and an opening is formed at a portion of the photoresist corresponding to the channel. Then, a catalyst layer is formed on the surface of the photoresist including the inside of the flow path and the opening, and the photoresist is removed by peeling it off together with an unnecessary portion of the catalyst layer formed on the surface. And a method for manufacturing a small chemical reactor. 2. The method for manufacturing a small chemical reaction device according to claim 1, wherein the width of the opening is made slightly smaller than the width of the flow channel. 3. A photoresist made of a dry film is attached to one surface of a small substrate, and an opening is formed in a portion of the photoresist corresponding to one surface of the substrate corresponding to a minute flow path forming region. Using the photoresist as a mask to form a minute flow path on one surface of the substrate,
A catalyst layer is formed on the surface of the photoresist including the inside of the flow path and the opening, and the photoresist is peeled off and removed together with an unnecessary portion of the catalyst layer formed on the surface. Manufacturing method of small chemical reactor. 4. The method for manufacturing a small chemical reaction device according to claim 1, wherein a descum treatment is performed after the photoresist is peeled off and removed. 5. The method for manufacturing a small chemical reaction device according to claim 4, wherein the discum treatment is oxygen plasma ashing. 6. The method for manufacturing a small chemical reaction device according to any one of claims 1 to 5, wherein the substrate is a silicon substrate. 7. The method for manufacturing a small chemical reaction device according to claim 6, wherein the flow path is formed by a sandblast method.