JP2003263794A - Method for manufacturing master disk for optical information recording medium, apparatus for treating master disk, master disk, stamper, method for manufacturing stamper, and optical information recording medium - Google Patents

Method for manufacturing master disk for optical information recording medium, apparatus for treating master disk, master disk, stamper, method for manufacturing stamper, and optical information recording medium

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Publication number
JP2003263794A
JP2003263794A JP2002061434A JP2002061434A JP2003263794A JP 2003263794 A JP2003263794 A JP 2003263794A JP 2002061434 A JP2002061434 A JP 2002061434A JP 2002061434 A JP2002061434 A JP 2002061434A JP 2003263794 A JP2003263794 A JP 2003263794A
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JP
Japan
Prior art keywords
master
information recording
optical information
recording medium
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002061434A
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Japanese (ja)
Other versions
JP4122802B2 (en
Inventor
Hidekazu Ito
英一 伊藤
Morihisa Tomiyama
盛央 富山
Hideji Sato
秀二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2002061434A priority Critical patent/JP4122802B2/en
Publication of JP2003263794A publication Critical patent/JP2003263794A/en
Application granted granted Critical
Publication of JP4122802B2 publication Critical patent/JP4122802B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To prevent the production of photoresist residues on a master disk surface of photoresist patterns after development of the master disk and the deterioration in the characteristics of an optical information recording medium when an exposure capability, developability and photoresist resolution are insufficient with respect to desired pattern dimensions. <P>SOLUTION: The master disk is irradiated, after development, with at least one of irradiation treatment media 104, such as light, plasma, and ion having 1 or under in the etching selection ratio of the master disk substrate and below 40 nm/min in an etching treatment rate. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、露光、現像による
パターン形成を利用して原盤を処理する光情報記録媒体
の原盤製造方法、および原盤、原盤からスタンパを製造
する方法、およびスタンパ、光情報記録媒体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a master for an optical information recording medium, which processes a master using pattern formation by exposure and development, a master, a method of manufacturing a stamper from the master, and a stamper and optical information. Recording medium

【0002】[0002]

【従来の技術】近年、光情報記録媒体の普及はめざまし
く、非接触で記録・再生が行え、それを安価に実現でき
る方式として幅広い用途での応用が実現されている。ま
たこの光情報記録媒体は、高記録密度化による記録容量
の向上が可能であり、次世代の光情報記録媒体の開発研
究が進められている。以下に従来の光情報記録媒体の原
盤製造方法、原盤からスタンパを製造する方法について
図4を用いて説明する。
2. Description of the Related Art In recent years, optical information recording media have been remarkably widespread, and recording / reproducing can be performed in a non-contact manner, which has been widely applied as a method capable of being realized at low cost. Further, this optical information recording medium is capable of improving the recording capacity by increasing the recording density, and research and development of a next-generation optical information recording medium is underway. A conventional method of manufacturing a master for an optical information recording medium and a method of manufacturing a stamper from the master will be described below with reference to FIG.

【0003】表面研磨されたガラスやシリコンなどの基
板401に、フォトレジスト密着剤402、フォトレジ
スト403の順で塗布した後に、加熱処理を行う
(a)。この基板とフォトレジスト密着材とフォトレジ
ストとを合わせて原盤404と呼ぶ。次に、この原盤に
レーザー光、電子線などのエネルギー線405により露
光を行う(b)。次に、この露光済み原盤を現像する
と、フォトレジストがポジ型であれば露光部分が除去さ
れ、ネガ型であれば未露光部が除去されることにより、
溝やピットなどのパターンが形成される(c)。場合に
よっては、このパターン形成後原盤に加熱処理を行う。
ここまでが従来の光情報記録媒体の原盤製造方法であ
り、この原盤に導電膜406を形成し(d)、電鋳によ
り金属層407を形成し(e)、原盤から金属層407
を剥離して、それを裏面研磨、形状加工したものがスタ
ンパとなる。また、剥離した金属層407を導電体とし
て、その上に再度電鋳を行うことで剥離した金属層と凹
凸の反転した金属層からマザリングスタンパが製造され
る。射出成型により、スタンパ上の凹凸を転写すること
により光情報記録媒体が製造される。
A substrate 401 made of glass or silicon whose surface has been polished is coated with a photoresist adhesive 402 and a photoresist 403 in this order, and then heat treatment is carried out (a). The substrate, the photoresist contact material, and the photoresist are collectively referred to as a master 404. Next, this master is exposed with an energy beam 405 such as a laser beam or an electron beam (b). Next, when this exposed master is developed, the exposed portion is removed if the photoresist is a positive type, and the unexposed portion is removed if the photoresist is a negative type.
Patterns such as grooves and pits are formed (c). In some cases, the master is heat-treated after the pattern formation.
The process up to this point is the conventional method of manufacturing a master for an optical information recording medium. A conductive film 406 is formed on the master (d), a metal layer 407 is formed by electroforming (e), and the metal layer 407 is formed on the master.
The stamper is obtained by peeling off, polishing the back surface, and processing the shape. Further, the peeled metal layer 407 is used as a conductor, and electroforming is performed thereon again to manufacture a mother ring stamper from the peeled metal layer and the metal layer in which unevenness is reversed. An optical information recording medium is manufactured by transferring unevenness on the stamper by injection molding.

【0004】[0004]

【発明が解決しようとする課題】光情報記録媒体の高密
度化に伴いパターン寸法は小さくなり、コントラストの
高い露光、現像が難しく、現像時に除去されるべきフォ
トレジストが完全に除去されずに残渣が残り易い。この
フォトレジスト残渣による形状悪化は、光情報記録媒体
の記録特性、再生特性に悪影響を及ぼす。
As the density of optical information recording media becomes higher, the pattern size becomes smaller, and it is difficult to expose and develop with high contrast, and the photoresist to be removed at the time of development is not completely removed and remains as a residue. Is easy to remain. The deterioration of the shape due to the photoresist residue adversely affects the recording characteristics and reproducing characteristics of the optical information recording medium.

【0005】例えば、案内溝を有する光情報記録媒体に
おいては、案内溝の形状を悪化させ、再生ノイズを増大
させ、その程度はマザリングを用いたスタンパでより顕
著に見られる。また、光情報記録媒体の案内溝上やピッ
ト上に記録膜や反射膜を成膜する際にもフォトレジスト
残渣により膜成長が悪影響を受けて、再生ノイズが増大
や、記録再生可能回数の減少が起こる。
For example, in an optical information recording medium having a guide groove, the shape of the guide groove is deteriorated and reproduction noise is increased, the degree of which is more remarkable in a stamper using a mother ring. Further, even when a recording film or a reflective film is formed on the guide groove or pit of the optical information recording medium, the film growth is adversely affected by the photoresist residue, resulting in an increase in reproduction noise and a decrease in the number of recordable / reproducible times. Occur.

【0006】また、フォトレジストを変性または変質さ
せた場合、フォトレジストの接着力が過大となり、原盤
上に形成した金属層を剥離する際に剥離ムラが発生す
る。
In addition, when the photoresist is modified or modified, the adhesive force of the photoresist becomes excessive and uneven peeling occurs when the metal layer formed on the master is peeled off.

【0007】[0007]

【課題を解決するための手段】上記課題を解決する、本
発明の光情報記録媒体の原盤製造方法は、基板上に薄膜
として形成されたフォトレジスト層に光または電子線を
所望パターン状に照射する第1工程と、前記フォトレジ
スト層に現像を行う第2工程とを有する光情報記録媒体
の原盤製造方法において、前記第2工程の後に前記フォ
トレジストに対する前記基板のエッチング選択比が1未
満であって、かつ、エッチング処理速度が40nm/分
以下である光、プラズマ、イオンの少なくとも一つの照
射を行うことを特徴とする。上記本発明の光情報記録媒
体の原盤製造方法により、フォトレジスト表面を荒らす
ことなく、現像後に残ったフォトレジスト残渣を除去す
ることができる。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a method of manufacturing a master for an optical information recording medium according to the present invention irradiates a photoresist layer formed as a thin film on a substrate with light or an electron beam in a desired pattern. And a second step of developing the photoresist layer, wherein the etching selectivity of the substrate to the photoresist is less than 1 after the second step. It is characterized in that at least one of light, plasma and ions having an etching rate of 40 nm / min or less is irradiated. According to the method for producing a master for an optical information recording medium of the present invention, the photoresist residue remaining after development can be removed without roughening the photoresist surface.

【0008】ここで、本発明の光情報記録媒体の原盤製
造方法において、前記フォトレジストを深さ方向に、処
理平面内平均0.5nm以上10nm以下除去すること
により、本発明の光情報記録媒体の原盤製造方法のもつ
効果を高めることができる。
Here, in the method of manufacturing a master for an optical information recording medium of the present invention, the photoresist is removed in the depth direction on the average of 0.5 nm or more and 10 nm or less in the processing plane to obtain the optical information recording medium of the present invention. The effect of the master manufacturing method can be enhanced.

【0009】ここで、本発明の光情報記録媒体の原盤製
造方法において、前記光、プラズマ、イオンの少なくと
も一つの照射において、前記フォトレジストに対する前
記基板のエッチング選択比を0.2以下とすることによ
り、本発明の光情報記録媒体の原盤製造方法のもつ効果
を高めることができる。
In the method of manufacturing a master for an optical information recording medium of the present invention, the etching selectivity of the substrate with respect to the photoresist is 0.2 or less in the irradiation of at least one of light, plasma and ions. As a result, the effect of the method for producing a master for an optical information recording medium of the present invention can be enhanced.

【0010】ここで、本発明の光情報記録媒体の原盤製
造方法において、前記光、プラズマ、イオンの少なくと
も一つの照射において、前記フォトレジストに対するエ
ッチングエッチング速度が20nm/分以下とすること
により、本発明の光情報記録媒体の原盤製造方法のもつ
効果を高めることができる。
Here, in the method of manufacturing a master for an optical information recording medium of the present invention, the etching etching rate for the photoresist is set to 20 nm / min or less in the irradiation of at least one of the light, plasma, and ions. It is possible to enhance the effect of the method of manufacturing a master for an optical information recording medium of the invention.

【0011】所望のフォトレジストパターン深さが5n
m以上40nm以下である時に本発明の効果は特に大き
く発揮される。
The desired photoresist pattern depth is 5n
The effect of the present invention is particularly great when the thickness is m or more and 40 nm or less.

【0012】上記課題を解決する、本発明のスタンパ製
造方法は、原盤および原盤上に形成された金属層を電鋳
液浴の温度と10度以上異なる温度とした後に原盤から
剥離することを特徴とする。上記本発明のスタンパ製造
方法により、現像後フォトレジストパターンに光、熱、
および高エネルギー粒子の少なくとも1つにより改質処
理を行った原盤上に電鋳により形成した金属層から光情
報記録媒体製造用スタンパを製造する際に、剥離ムラを
抑制することができる。
The stamper manufacturing method of the present invention for solving the above-mentioned problems is characterized in that the master and the metal layer formed on the master are separated from the master after the temperature of the electroforming bath is different by 10 degrees or more. And By the stamper manufacturing method of the present invention, light, heat, and
When the stamper for manufacturing an optical information recording medium is manufactured from a metal layer formed by electroforming on a master that has been modified with at least one of high-energy particles, peeling unevenness can be suppressed.

【0013】ここで、本発明のスタンパ製造方法におい
て、前記金属層を水中で剥離することにより、本発明の
スタンパ製造方法の効果を高めることができる。
Here, in the stamper manufacturing method of the present invention, the effect of the stamper manufacturing method of the present invention can be enhanced by peeling the metal layer in water.

【0014】[0014]

【発明の実施の形態】図面を参照しながら、本発明の実
施の形態について説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

【0015】(実施の形態1)図1(a)に、所望パタ
ーン寸法に対して露光能力ないし現像能力、フォトレジ
スト解像度などが十分でなく、現像後に基板101上に
フォトレジスト残渣102が残った原盤を示す。図1
(b)に示すように、上記現像後の原盤に、光、イオ
ン、プラズマなどの照射処理媒質104を照射する。そ
の際、フォトレジスト除去速度の小さい処理条件を使用
するほど、フォトレジスト103表面を荒らしにくくな
り、ある一定以下のエッチング処理速度以下では、フォ
トレジスト103上の表面粗さを増大させることなく、
フォトレジスト残渣102を除去することができる
(c)。
(Embodiment 1) In FIG. 1A, the exposure ability or developing ability, the photoresist resolution, etc. are not sufficient for a desired pattern size, and a photoresist residue 102 remains on the substrate 101 after development. The master is shown. Figure 1
As shown in (b), the developed master is irradiated with an irradiation processing medium 104 such as light, ions, or plasma. At that time, as the processing condition with a smaller photoresist removal rate is used, the surface of the photoresist 103 is less likely to be roughened, and at a certain etching rate or less, without increasing the surface roughness on the photoresist 103,
The photoresist residue 102 can be removed (c).

【0016】光を照射する場合は、紫外線フラッシュラ
ンプやYAGレーザーのようなパルスレーザーなどを用
いることができる。また、プラズマやイオンを照射する
場合は、酸素や一酸化炭素、アンモニア、希ガスなどの
エッチングガスを用いることができる。上記に示した以
外の光やプラズマやイオンについても、照射処理による
フォトレジストの除去される速度、即ち、エッチング処
理速度が、例えば、40nm/分以下のように十分小さ
ければ、照射処理によりフォトレジスト103表面が荒
れる影響が小ない。但し、照射処理の種類によって、エ
ッチング処理速度とフォトレジスト表面荒れとの関係は
異なり、エッチング処理速度が40nm/分より大きく
とも、フォトレジスト表面粗さを増大させることがなけ
れば、本発明の効果を得ることができる。
When irradiating with light, an ultraviolet flash lamp or a pulse laser such as a YAG laser can be used. In the case of irradiating with plasma or ions, an etching gas such as oxygen, carbon monoxide, ammonia, or a rare gas can be used. With respect to light, plasma, and ions other than those described above, if the rate at which the photoresist is removed by the irradiation process, that is, the etching rate is sufficiently low, for example, 40 nm / min or less, the photoresist by the irradiation process 103 The effect of roughening the surface is small. However, the relationship between the etching processing rate and the surface roughness of the photoresist differs depending on the type of irradiation processing, and the effect of the present invention is obtained unless the surface roughness of the photoresist is increased even if the etching processing rate is higher than 40 nm / min. Can be obtained.

【0017】(表1)に、アッシング、即ち、酸素イオ
ン照射を用いて、未現像のノボラック系フォトレジスト
を処理面内で深さ方向に平均10nm除去した際のエッ
チング処理速度と照射処理によるフォトレジスト表面粗
さとの関係を示す。フォトレジスト除去量を10nmと
したのは、除去する対象であるフォトレジスト残渣の厚
みが大きいものでも10nm未満となるためである。実
際には、フォトレジスト残渣は体積に対する表面積の割
合がフォトレジストや基板表面などに比べて大きいため
に照射処理時のエッチング選択比が高く、照射処理によ
るフォトレジスト除去深さは処理面内平均で5nmあれ
ば十分である。
In Table 1, ashing, that is, oxygen ion irradiation is used to remove the undeveloped novolac photoresist by 10 nm on average in the depth direction within the processed surface, and the etching processing speed and the photo by the irradiation processing. The relationship with the resist surface roughness is shown. The amount of photoresist removed is set to 10 nm because even if the photoresist residue to be removed has a large thickness, it is less than 10 nm. In reality, the surface area to volume ratio of the photoresist residue is larger than that of the photoresist or substrate surface, so the etching selectivity ratio during irradiation processing is high, and the photoresist removal depth by irradiation processing is an average within the processing surface. 5 nm is sufficient.

【0018】[0018]

【表1】 [Table 1]

【0019】本発明の実施の形態で扱うフォトレジスト
表面粗さ(Ra)は1nm以下であり、その本発明によ
る照射処理による変化は、フォトレジスト除去量10n
mで十分に飽和している為、照射除去量が10nmより
も大きい場合にも、以下に述べる照射処理による表面粗
さ変化についての効果はそのまま適用できる。即ち、照
射処理によるフォトレジスト除去量が深さ方向に10n
m以上の場合にも同様の効果を得ることができる。
The photoresist surface roughness (Ra) dealt with in the embodiments of the present invention is 1 nm or less, and the change due to the irradiation treatment according to the present invention is that the photoresist removal amount is 10 n.
Since m is sufficiently saturated, even when the irradiation removal amount is larger than 10 nm, the effect on the surface roughness change due to the irradiation treatment described below can be applied as it is. That is, the amount of photoresist removed by the irradiation process is 10 n in the depth direction.
The same effect can be obtained when m or more.

【0020】また、未現像のフォトレジストを使用した
のは、現像により、フォトレジスト表面が荒れるのを避
けるためであり、未現像のフォトレジストの表面粗さ
(Ra)は0.3nmであった。現像後のフォトレジス
トの表面粗さ(Ra)は、現像方法やフォトレジスト種
類などにより異なるが、0.4nmから1.0nm程度
である。以上から、照射処理にアッシング処理を用いた
場合、エッチング処理速度40nm/分以下では、原盤
の種類によっては、本発明の効果が得られる、即ち、フ
ォトレジスト表面を荒らすことなく、現像後に残ったフ
ォトレジスト残渣を除去することができる。エッチング
処理速度20nm以下では、一般的な全ての原盤に対し
て本発明の効果が得られることが分かる。なお、フォト
レジスト、照射処理方法などにより、エッチング処理速
度とフォトレジスト表面荒れとの関係は異なるが、アク
リル系のフォトレジストを使用した場合や、照射処理に
一酸化炭素やアルゴンなどの希ガスを用いた場合にも、
同様の結果が得られた。
The undeveloped photoresist was used in order to prevent the photoresist surface from being roughened by the development, and the surface roughness (Ra) of the undeveloped photoresist was 0.3 nm. . The surface roughness (Ra) of the photoresist after development is about 0.4 nm to 1.0 nm, although it varies depending on the developing method and the type of photoresist. From the above, when the ashing treatment is used for the irradiation treatment, the effect of the present invention can be obtained depending on the type of the master at an etching treatment speed of 40 nm / min or less, that is, it remains after development without roughening the photoresist surface. The photoresist residue can be removed. It is understood that the effect of the present invention can be obtained for all general masters when the etching processing speed is 20 nm or less. The relationship between the etching rate and the surface roughness of the photoresist varies depending on the photoresist and the irradiation method, but when an acrylic photoresist is used or when a rare gas such as carbon monoxide or argon is used for the irradiation treatment. When used,
Similar results were obtained.

【0021】また、本発明の実施の形態では、フォトレ
ジスト残渣102を除去し、所望パターンである基板表
面105を露出させることが目的であるが、光、プラズ
マ、イオンの少なくとも一つの照射により、フォトレジ
ストのみならず基板表面105までも削り取られてしま
うと、本来の所望パターンを得ることができなくなる。
それを回避するために、照射処理のフォトレジストに対
する原盤のエッチング選択比が1未満となる、基板とフ
ォトレジストと照射処理との組み合わせが必要である。
Further, in the embodiment of the present invention, the purpose is to remove the photoresist residue 102 and expose the substrate surface 105 having a desired pattern, but by irradiation with at least one of light, plasma and ions, If not only the photoresist but also the substrate surface 105 is scraped off, the original desired pattern cannot be obtained.
In order to avoid this, it is necessary to combine the substrate, the photoresist, and the irradiation treatment so that the etching selection ratio of the master to the photoresist in the irradiation treatment is less than 1.

【0022】上記エッチング選択比は小さいほど原盤表
面を荒らさずにすむが、前述したとおり、本発明のフォ
トレジスト除去深さは処理面内平均で5nmで十分であ
り、上記エッチング選択比は0.2以下では照射処理に
よる原盤表面の荒れが悪影響を持つことはない。
The smaller the etching selection ratio is, the less the surface of the master is to be roughened. However, as described above, the photoresist removal depth of the present invention is 5 nm on average in the processed surface, and the etching selection ratio is 0. If it is 2 or less, the roughening of the master surface due to the irradiation treatment does not have a bad influence.

【0023】例えば、基板に石英ガラスやアルカリ添加
ガラス、シリコンなどを用い、照射処理に酸素イオン、
アルゴンイオンなどを用いた場合、例えば、ノボラック
系樹脂やアクリル系樹脂などを基材とする、ほとんどの
フォトレジストに対して、照射処理のフォトレジストに
対する基板のエッチング選択比が十分小さい値となり、
本発明の原盤製造方法の効果が十分得られた。
For example, quartz glass, alkali-added glass, silicon or the like is used for the substrate, and oxygen ions are used for the irradiation treatment.
When using argon ions or the like, for example, using a novolac resin or acrylic resin as a base material, for most photoresists, the etching selection ratio of the substrate to the photoresist for irradiation processing is a sufficiently small value,
The effects of the master disc manufacturing method of the present invention were sufficiently obtained.

【0024】次に、本発明の実施の手段として、エッチ
ング装置を用いた場合の本発明の効果についてより具体
的に説明する。基板に石英ガラス、フォトレジストにノ
ボラック系フォトレジストを用いて、露光、現像により
原盤上に深さ25nmのパターンを形成した後で、エッ
チング装置を用いて導入ガスを酸素、または、アルゴン
としてエッチング処理速度8nm/分で、深さ方向に処
理面内平均で4nmフォトレジストを除去する本発明の
原盤処理を行ったところ、何れのガスを用いた場合も、
処理前に表面粗さ(Ra)0.4nmであったフォトレ
ジスト表面を全く荒らすことなく、フォトレジスト残渣
を完全に除去することができた。
Next, the effect of the present invention when an etching apparatus is used as a means for carrying out the present invention will be described more specifically. After forming a pattern with a depth of 25 nm on the master by exposure and development using quartz glass as the substrate and novolac photoresist as the photoresist, use an etching device to etch with oxygen or argon as the introduced gas. When the master processing of the present invention for removing the photoresist of 4 nm on average in the processing surface in the depth direction was performed at a speed of 8 nm / min, no matter which gas was used,
It was possible to completely remove the photoresist residue without roughening the photoresist surface, which had a surface roughness (Ra) of 0.4 nm before the treatment.

【0025】そして、これらの本発明の原盤製造方法に
より製造した、トラックピッチ320nm、溝幅160
nm、溝深さ20nmの案内溝を持つ原盤からスタンパ
を製造し、そのスタンパを用いて射出成型により製造さ
れた光ディスクの案内溝の再生ノイズを測定したとこ
ろ、線速4.5m/秒で再生した時の周波数2MHzに
おいて、従来の方法で製造された光ディスクに比べて再
生のノイズが平均1.1dB低減された。また、その効
果は、マザリング工程を介した光ディスクにおいては、
平均1.6dBの低減となった。ここで線速4.5m/
秒で再生した時の2MHzでの再生ノイズを示したの
は、この周波数においては、原盤上に形成されたフォト
レジストパターンの形状の良、不良が再生ノイズに大き
く影響するためである。
Then, a track pitch of 320 nm and a groove width of 160, which are manufactured by these master disk manufacturing methods of the present invention, are used.
nm, the stamper was manufactured from a master having a guide groove with a groove depth of 20 nm, and the reproduction noise of the guide groove of an optical disk manufactured by injection molding was measured using the stamper, and it was reproduced at a linear velocity of 4.5 m / sec. At the frequency of 2 MHz, the reproduction noise was reduced by 1.1 dB on average as compared with the optical disc manufactured by the conventional method. In addition, the effect is that in the optical disc through the mothering process,
The average was reduced by 1.6 dB. Line speed 4.5m /
The reproduction noise at 2 MHz when reproduced in seconds is shown because at this frequency, the good or bad of the shape of the photoresist pattern formed on the master has a great influence on the reproduction noise.

【0026】さらに、記録再生膜を備える光情報記録媒
体では、フォトレジスト残渣による、記録再生膜の形状
悪化を回避することができるために、記録再生時のエラ
ー発生率の低減、信号再生ジッターの低減が可能とな
る。
Further, in the optical information recording medium having the recording / reproducing film, it is possible to avoid the deterioration of the shape of the recording / reproducing film due to the photoresist residue, so that the error occurrence rate at the time of recording / reproducing is reduced and the signal reproducing jitter is reduced. It is possible to reduce.

【0027】以上説明した本発明の効果は、表面粗さ
(Ra)0.4以上1.0以下程度を必要とする原盤に
対するものであり、フォトレジストパターンの深さが、
例えば100nm以上であるような場合には、本発明の
効果はあまり得られない。その点で本発明の効果が高く
得られるのは、フォトレジストパターン深さが40nm
以下であり、また、5nm以下では、必要となる表面粗
さが非常に小さく、測定が困難であるために本発明の方
法が有効であるかどうかを確かめることができなかっ
た。但し、本発明の方法によれば、原盤のフォトレジス
トパターン深さによらず、従来の技術よりも優れたフォ
トレジスト残渣除去を可能とする点に変わりはない。
The effects of the present invention described above are for a master that requires a surface roughness (Ra) of 0.4 or more and 1.0 or less, and the depth of the photoresist pattern is
For example, when the thickness is 100 nm or more, the effect of the present invention cannot be obtained so much. In this respect, the effect of the present invention is highly obtained when the photoresist pattern depth is 40 nm.
Below 5 nm, it was not possible to confirm whether the method of the present invention is effective because the required surface roughness is very small and the measurement is difficult. However, according to the method of the present invention, regardless of the photoresist pattern depth of the master, it is possible to remove the photoresist residue better than the conventional technique.

【0028】なお、本発明においては、基板上のフォト
レジスト薄膜の形成方法や、フォトレジストへの露光方
法、現像方法について制限するものではなく、それぞれ
にいかなる方法を用いてもよく、例えば、石英ガラス円
板の基板上にスピンコート法によりフォトレジスト薄膜
を形成し、回転ステージに載せて回転させながら紫外線
レーザーによる露光を行った後に、パドル現像を行って
もよい。
In the present invention, the method for forming the photoresist thin film on the substrate, the method for exposing the photoresist, and the method for developing are not limited, and any method may be used, for example, quartz. A photoresist thin film may be formed on a glass disk substrate by a spin coating method, exposed to an ultraviolet laser while being placed on a rotating stage and being rotated, and then paddle development may be performed.

【0029】(実施の形態2)図2を用いて、実施の形
態1で説明した原盤製造方法に加えて、同時に、加熱処
理を行う原盤製造方法について説明する。ここでいう加
熱処理とは、現像後のフォトレジストパターンをフォト
レジストの融点近くまで加熱することにより、フォトレ
ジストの表面張力を利用してフォトレジストに対して表
面を平滑化するなど形状変化を起こさせるもので、ポス
トベーク、またはハードベークと呼ばれるものである。
その際の処理温度は、フォトレジストの融点を考えると
120度以上170度以下がよい。
(Embodiment 2) With reference to FIG. 2, a master manufacturing method for simultaneously performing heat treatment will be described in addition to the master manufacturing method described in the first embodiment. The heat treatment mentioned here means that the photoresist pattern after development is heated to near the melting point of the photoresist to cause a shape change such as smoothing the surface of the photoresist by utilizing the surface tension of the photoresist. This is what is called a post bake or a hard bake.
Considering the melting point of the photoresist, the processing temperature at that time is preferably 120 degrees or more and 170 degrees or less.

【0030】所望パターン寸法に対して露光能力ないし
現像能力、フォトレジスト解像度などが十分でなく、現
像後に基板上にフォトレジスト残渣が残った原盤201
を、加熱機構を備えたステージ202上に載せる。図2
(a)は実施の形態1で説明した本発明の照射処理にエ
ッチングを利用する場合の装置構成を示したもので、ス
テージ202を含む高周波発生装置203、それらを囲
うチャンバ204、チャンバ204内の真空度を制御す
る排気装置205、処理ガスを導入する処理ガス導入装
置206を備える。図2(b)は実施の形態1で説明し
た本発明の照射処理に、例えば紫外線フラッシュランプ
やパルスレーザーなどの光照射を利用する場合の装置構
成を示したもので、加熱機構を備えたステージ202と
光照射装置207を備える。装置を使用する際の利便性
のために、ステージ202と光照射装置207とを囲う
チャンバ208があってもよい。
The master 201 in which the exposure ability, the developing ability, the photoresist resolution, etc. are not sufficient for the desired pattern size, and the photoresist residue remains on the substrate after development.
Is placed on the stage 202 equipped with a heating mechanism. Figure 2
(A) shows an apparatus configuration when etching is used for the irradiation processing of the present invention described in the first embodiment. A high frequency generator 203 including a stage 202, a chamber 204 surrounding them, and a chamber 204 inside the chamber 204 are shown. An exhaust device 205 for controlling the degree of vacuum and a processing gas introduction device 206 for introducing a processing gas are provided. FIG. 2B shows an apparatus configuration in which light irradiation such as an ultraviolet flash lamp or a pulse laser is used for the irradiation processing of the present invention described in the first embodiment, and a stage having a heating mechanism is provided. 202 and a light irradiation device 207 are provided. There may be a chamber 208 surrounding the stage 202 and the light irradiation device 207 for convenience in using the device.

【0031】実際に図2(a)の装置を用いて、本発明
の原盤製造方法により製造した、トラックピッチ320
nm、溝幅160nm、溝深さ20nmの案内溝を持つ
原盤からスタンパを製造し、そのスタンパを用いて射出
成型により製造された光ディスクの案内溝の再生ノイズ
を測定したところ、線速4.5m/秒で再生した時の周
波数2MHzにおいて、従来の方法で製造された光ディ
スクに比べて再生ノイズが平均2.6dB低減された。
さらに、記録再生膜を備える光情報記録媒体では、フォ
トレジスト残渣による、記録再生膜の形状悪化を回避す
ることができるために、記録再生時のエラー発生率の低
減、信号再生ジッターの低減が可能となる。
A track pitch 320 actually manufactured by the master manufacturing method of the present invention by using the apparatus shown in FIG.
nm, a groove width of 160 nm, and a groove depth of 20 nm, a stamper was manufactured from a master, and the reproduction noise of the guide groove of an optical disk manufactured by injection molding was measured using the stamper, and the linear velocity was 4.5 m. At a frequency of 2 MHz when reproduced at a speed of 1 / sec, the reproduction noise was reduced by 2.6 dB on average as compared with the optical disc manufactured by the conventional method.
Further, in the optical information recording medium having the recording / reproducing film, the deterioration of the shape of the recording / reproducing film due to the photoresist residue can be avoided, so that the error occurrence rate at the time of recording / reproducing and the signal reproducing jitter can be reduced. Becomes

【0032】実施の形態1で説明した本発明の原盤製造
方法(照射処理)を用いずに、ポストベークと呼ばれる
加熱処理のみを行った場合、加熱処理による再生ノイズ
の低減値は平均1.5dBであるから、実施の形態2で
説明した原盤製造方法によれば、本発明の原盤への照射
処理の効果と、従来の技術である原盤への加熱処理の効
果との両方を損なうことなく、1つの装置で同時に処理
できる。これにより、工程を減らすことによる異物の混
入回避や製造の処理速度向上が可能となる。
When only the heat treatment called post bake is performed without using the master disk manufacturing method (irradiation treatment) of the present invention described in the first embodiment, the reduction value of the reproduction noise due to the heat treatment is 1.5 dB on average. Therefore, according to the master disk manufacturing method described in the second embodiment, without damaging both the effect of the irradiation processing on the master disk of the present invention and the effect of the heat treatment on the master disk which is the conventional technique, It can be processed simultaneously by one device. As a result, it is possible to avoid the inclusion of foreign matter and improve the processing speed of manufacturing by reducing the number of steps.

【0033】(実施の形態3)ここでは、例えば、実施
の形態1や実施の形態2で説明したような処理を行った
原盤からの金属層剥離における本発明の実施の形態につ
いて図3を用いて説明する。
(Embodiment 3) Here, for example, FIG. 3 is used for the embodiment of the present invention in peeling a metal layer from a master which has been subjected to the treatment described in Embodiment 1 or Embodiment 2. Explain.

【0034】フォトレジストパターンの形成された基板
301上に、例えば電鋳などにより形成された金属層3
02は、電鋳液浴から取り出された後、直ちに図3
(a)のように、原盤301から剥離される。しかし、
例えば、本発明の原盤処理や、高温過熱処理、化学処理
などにより、原盤301上のフォトレジストが改質した
場合に、フォトレジスト303による、原盤301と金
属層302との接着力が過大となり、上記の金属層剥離
の際に金属層302の表面に、図3(b)のような、剥
離方向と垂直な方向に分布する、大きさ10μm以下の
微細な凹凸からなる剥離ムラ305が発生し、スタン
パ、ひいては光情報記録媒体の特性を悪化させてしまう
ことがある。
A metal layer 3 formed by, for example, electroforming on the substrate 301 on which the photoresist pattern is formed.
02 was removed from the electroforming bath immediately after
As shown in (a), it is separated from the master 301. But,
For example, when the photoresist on the master 301 is modified by the master processing, high-temperature overheat treatment, chemical treatment, etc. of the present invention, the adhesive force between the master 301 and the metal layer 302 by the photoresist 303 becomes excessive, At the time of peeling the metal layer, peeling unevenness 305 having fine irregularities with a size of 10 μm or less distributed in the direction perpendicular to the peeling direction is generated on the surface of the metal layer 302 as shown in FIG. 3B. The characteristics of the stamper, and eventually the optical information recording medium, may be deteriorated.

【0035】本発明のスタンパ製造方法では、原盤30
1および金属層302を電鋳液浴から取り出した後、例
えば、大気中に放置したり、電鋳液浴と温度の異なる水
中に入れたりして、剥離時に原盤301および金属層3
02を電鋳時と異なる温度とすることにより発生させた
金属層内の応力を利用して、剥離ムラ305を回避でき
る。さらに、剥離を水中で行うことにより、剥離時に徐
々に広がる原盤と金属層の隙間304に水が浸入するこ
とにより、剥離をより行い易くすることができる。
In the stamper manufacturing method of the present invention, the master 30
1 and the metal layer 302 are taken out of the electroforming liquid bath and then left in the atmosphere or in water having a temperature different from that of the electroforming liquid bath, for example, and the master 301 and the metal layer 3 are peeled off at the time of peeling.
The peeling unevenness 305 can be avoided by utilizing the stress in the metal layer generated by setting 02 to a temperature different from that at the time of electroforming. Furthermore, by performing the peeling in water, water enters the gap 304 between the master and the metal layer that gradually spreads during the peeling, so that the peeling can be performed more easily.

【0036】[0036]

【表2】 [Table 2]

【0037】(表2)に温度が電鋳液浴よりも5度から
35度低い水中で、それぞれの温度で10回ずつ剥離を
行った際の剥離ムラの発生回数を示した。この結果か
ら、原盤301および金属層302に電鋳液浴に対して
10度以上の温度差を持たせた場合、本発明の効果が得
られ、20度以上の温度差を持たせた場合に特に大きな
効果が得られることが分かる。上記の例では、原盤30
1および金属層302を電鋳液浴よりも10度以上低い
場合に本発明の効果が得られることを示したが、原盤3
01および金属層302を電鋳液浴よりも10度以上高
い温度にした場合にも本発明の効果は得られる。
Table 2 shows the number of occurrences of peeling unevenness when peeling was performed 10 times at each temperature in water at a temperature 5 to 35 degrees lower than that of the electroforming bath. From this result, when the master 301 and the metal layer 302 have a temperature difference of 10 degrees or more with respect to the electroforming bath, the effect of the present invention is obtained, and when the temperature difference of 20 degrees or more is obtained. It can be seen that a particularly large effect can be obtained. In the above example, the master 30
It was shown that the effect of the present invention can be obtained when 1 and the metal layer 302 are lower than the electroforming bath by 10 degrees or more.
The effect of the present invention can be obtained even when the temperature of 01 and the metal layer 302 is higher than the temperature of the electroforming bath by 10 degrees or more.

【0038】[0038]

【発明の効果】以上説明したように、本発明の光情報記
録媒体の原盤製造方法によれば、原盤上のフォトレジス
ト表面粗さを大きくすることなくフォトレジスト残渣を
除去することにより、再生ノイズが低いなどのよりよい
光情報記録媒体を製造することができる。また、本発明
の光情報記録媒体の原盤製造方法によれば、上記照射処
理による本発明の原盤製造方法と、加熱処理による従来
の原盤処理法方を1つの装置で同時行うことができるた
め、異物混入回避、製造処理速度の向上が可能となる。
また、本発明のスタンパ製造方法によれば、本発明の原
盤製造方法を含む、原盤上のフォトレジスト改質処理を
受けた原盤を用いるスタンパ製造における剥離困難性と
いう課題を解決することができる。
As described above, according to the method of manufacturing the master for the optical information recording medium of the present invention, the reproduction noise is removed by removing the photoresist residue without increasing the surface roughness of the photoresist on the master. It is possible to manufacture a better optical information recording medium having a low value. Further, according to the method of manufacturing a master for an optical information recording medium of the present invention, the master manufacturing method of the present invention by the irradiation treatment and the conventional master processing method by heat treatment can be simultaneously performed by one apparatus. It is possible to avoid mixing of foreign matters and improve the manufacturing processing speed.
Further, according to the stamper manufacturing method of the present invention, it is possible to solve the problem of peeling difficulty in the stamper manufacturing using the master disk subjected to the photoresist modification treatment on the master disk, including the master disk manufacturing method of the present invention.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明における光情報記録媒体の原盤製造方法
を示す図
FIG. 1 is a diagram showing a method of manufacturing a master of an optical information recording medium according to the present invention.

【図2】本発明における光情報記録媒体の原盤製造装置
を示す図
FIG. 2 is a diagram showing a master disk manufacturing apparatus for an optical information recording medium according to the present invention.

【図3】本発明における光情報記録媒体のスタンパ製造
方法を示す図
FIG. 3 is a diagram showing a method of manufacturing a stamper for an optical information recording medium according to the present invention.

【図4】従来の技術を示す図FIG. 4 is a diagram showing a conventional technique.

【符号の説明】[Explanation of symbols]

101 基板 102 残渣 103 フォトレジスト 104 照射処理媒質 105 基板表面 201 原盤 202 ステージ 203 高周波発生装置 204 チャンバ 205 排気装置 206 処理ガス導入装置 207 光照射装置 208 チャンバ 301 基板 302 金属層 303 フォトレジスト 304 隙間 305 剥離ムラ 401 基板 402 密着剤 403 フォトレジスト 404 原盤 405 エネルギー線 406 導電膜 407 金属層 101 substrate 102 residue 103 photoresist 104 Irradiation processing medium 105 substrate surface 201 master 202 stage 203 High frequency generator 204 chamber 205 exhaust system 206 Processing gas introduction device 207 Light irradiation device 208 chamber 301 substrate 302 metal layer 303 photoresist 304 gap 305 Peeling unevenness 401 substrate 402 Adhesive 403 photoresist 404 Master 405 energy rays 406 conductive film 407 metal layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐藤 秀二 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 5D121 BB01 BB31 CB08 GG04 GG07 GG12 GG16 GG30    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shuji Sato             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F term (reference) 5D121 BB01 BB31 CB08 GG04 GG07                       GG12 GG16 GG30

Claims (15)

【特許請求の範囲】[Claims] 【請求項1】基板上に薄膜として形成されたフォトレジ
スト層に光または電子線を所望パターン状に照射する第
1工程と、前記フォトレジスト層に現像を行う第2工程
とを有する光情報記録媒体の原盤製造方法において、前
記第2工程の後に前記フォトレジスト層に対する前記基
板のエッチング選択比が1未満であって、かつ、エッチ
ング処理速度が40nm/分以下である光、プラズマ、
イオンの少なくとも一つの照射を行うことを特徴とする
光情報記録媒体の原盤製造方法。
1. An optical information recording method comprising: a first step of irradiating a photoresist layer formed as a thin film on a substrate with light or an electron beam in a desired pattern; and a second step of developing the photoresist layer. In the method for producing a master disc of a medium, after the second step, the etching selectivity of the substrate with respect to the photoresist layer is less than 1, and the etching treatment rate is 40 nm / min or less, plasma,
A method of manufacturing a master for an optical information recording medium, which comprises irradiating at least one of ions.
【請求項2】前記光、プラズマ、イオンの少なくとも一
つの照射において、前記フォトレジストを深さ方向に、
処理平面内平均0.5nm以上10nm以下除去するこ
とを特徴とする請求項1記載の光情報記録媒体の原盤製
造方法。
2. The photoresist in the depth direction in the irradiation of at least one of light, plasma and ions,
2. The method for producing a master disc for an optical information recording medium according to claim 1, wherein an average of 0.5 nm or more and 10 nm or less in the processing plane is removed.
【請求項3】前記光、プラズマ、イオンの少なくとも一
つの照射において、前記フォトレジストに対する前記基
板のエッチング選択比が0.2以下であることを特徴と
する請求項1記載の光情報記録媒体の原盤製造方法。
3. The optical information recording medium according to claim 1, wherein an etching selection ratio of the substrate to the photoresist is 0.2 or less in the irradiation of at least one of the light, plasma, and ions. Master manufacturing method.
【請求項4】前記光、プラズマ、イオンの少なくとも一
つの照射において、前記フォトレジストに対するエッチ
ング処理速度が20nm/分以下であることを特徴とす
る請求項1記載の光情報記録媒体の原盤製造方法。
4. The method of manufacturing a master disc for an optical information recording medium according to claim 1, wherein an etching rate of the photoresist is 20 nm / min or less in the irradiation of at least one of the light, plasma and ions. .
【請求項5】所望のフォトレジストパターン深さが5n
m以上40nm以下であることを特徴とする請求項1記
載の光情報記録媒体の原盤製造方法。
5. A desired photoresist pattern depth is 5n.
2. The method for producing a master for an optical information recording medium according to claim 1, wherein the master is not less than m and not more than 40 nm.
【請求項6】原盤に、前記光、プラズマ、イオンの少な
くとも一つの照射と120度以上170度以下の加熱処
理とを同時に行うことを特徴とする光情報記録媒体の原
盤製造方法。
6. A method of manufacturing a master for an optical information recording medium, wherein the master is simultaneously irradiated with at least one of the light, plasma, and ions, and heat-treated at 120 ° C. or higher and 170 ° C. or lower.
【請求項7】前記原盤への前記光、プラズマ、イオンの
少なくとも一つの照射と前記加熱処理とを同時に行う手
段を備える光情報記録媒体の原盤処理装置。
7. A master processing apparatus for an optical information recording medium, comprising means for simultaneously irradiating the master with at least one of the light, plasma and ions and the heat treatment.
【請求項8】請求項1ないし請求項6の何れかに記載の
光情報記録媒体の原盤製造方法により製造される光情報
記録媒体の原盤。
8. A master of an optical information recording medium manufactured by the master manufacturing method of an optical information recording medium according to any one of claims 1 to 6.
【請求項9】請求項8記載の光情報記録媒体原盤を用い
て製造される光情報記録媒体のスタンパ。
9. A stamper of an optical information recording medium manufactured by using the optical information recording medium master according to claim 8.
【請求項10】請求項8記載の光情報記録媒体原盤を用
いて製造される光情報記録媒体のマザリング用スタン
パ。
10. A stamper for mothering an optical information recording medium manufactured by using the optical information recording medium master according to claim 8.
【請求項11】請求項8記載の光情報記録媒体原盤を用
いて製造される光情報記録媒体。
11. An optical information recording medium manufactured by using the optical information recording medium master according to claim 8.
【請求項12】現像後フォトレジストパターンに光、
熱、および高エネルギー粒子の少なくとも1つにより改
質処理を行う工程を持つ原盤製造方法によって製造され
た原盤上に電鋳により形成した金属層から光情報記録媒
体製造用スタンパを製造する際に、原盤および原盤上に
形成された金属層を電鋳液浴の温度と10度以上異なる
温度とした後に原盤から剥離することを特徴とする光情
報記録媒体のスタンパ製造方法。
12. A photoresist pattern is exposed to light after development,
When manufacturing a stamper for manufacturing an optical information recording medium from a metal layer formed by electroforming on a master manufactured by a master manufacturing method having a step of performing a modification treatment with at least one of heat and high-energy particles, A method for manufacturing a stamper for an optical information recording medium, which comprises peeling the master and the metal layer formed on the master from the master after making the temperature different from the temperature of the electroforming bath by 10 degrees or more.
【請求項13】前記金属層を水中で剥離することを特徴
とする請求項12記載のスタンパ製造方法。
13. The stamper manufacturing method according to claim 12, wherein the metal layer is peeled off in water.
【請求項14】前記原盤および前記金属層と電鋳液浴温
との温度差を20度以上とすることを特徴とする請求項
12記載のスタンパ製造方法。
14. The stamper manufacturing method according to claim 12, wherein the temperature difference between the master and the metal layer and the electroforming bath temperature is 20 degrees or more.
【請求項15】請求項12記載のスタンパ製造方法によ
り製造されるスタンパ。
15. A stamper manufactured by the stamper manufacturing method according to claim 12.
JP2002061434A 2002-03-07 2002-03-07 Stamper manufacturing method, master processing equipment Expired - Fee Related JP4122802B2 (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7618549B2 (en) 2005-10-26 2009-11-17 Kabushiki Kaisha Toshiba Method of forming patterns and method of manufacturing magnetic recording media

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7618549B2 (en) 2005-10-26 2009-11-17 Kabushiki Kaisha Toshiba Method of forming patterns and method of manufacturing magnetic recording media

Also Published As

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