JP2003251101A - Crystallization apparatus - Google Patents

Crystallization apparatus

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Publication number
JP2003251101A
JP2003251101A JP2002058556A JP2002058556A JP2003251101A JP 2003251101 A JP2003251101 A JP 2003251101A JP 2002058556 A JP2002058556 A JP 2002058556A JP 2002058556 A JP2002058556 A JP 2002058556A JP 2003251101 A JP2003251101 A JP 2003251101A
Authority
JP
Japan
Prior art keywords
container
crystallization
raw material
magnetic force
crystallizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002058556A
Other languages
Japanese (ja)
Other versions
JP4187446B2 (en
Inventor
Katsumi Shiobara
克己 塩原
Kenji Shimizu
健司 清水
Kaoru Ogawa
薫 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Satake Chemical Equipment Mfg Ltd
Original Assignee
Satake Chemical Equipment Mfg Ltd
Japan Science and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Satake Chemical Equipment Mfg Ltd, Japan Science and Technology Corp filed Critical Satake Chemical Equipment Mfg Ltd
Priority to JP2002058556A priority Critical patent/JP4187446B2/en
Publication of JP2003251101A publication Critical patent/JP2003251101A/en
Application granted granted Critical
Publication of JP4187446B2 publication Critical patent/JP4187446B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystallization apparatus capable of easily obtaining crystals mutually aligned in crystallographic axis direction. <P>SOLUTION: Introducing pipe 3 from an evaporation part 1 is introduced into the lower part at the center part of the container 2a of a crystallization part 2 to communicate with the container 2a and connected to the evaporation part 1 from the side wall of the container 2a by a return pipe 4. A supply pipe 5 of a raw material solution is connected to the intermediate part of the return pipe so as to communication with the return pipe 4 and a magnetic force generation means 6 comprising an electromagnet is provided to the outer side wall of the container 2a. The raw material solution is allowed to flow in the evaporation part 1 through the supply pipe 5 and the return pipe 4 to flow in the crystallization part 2 through the introducing pipe 3 while it is evaporated. The raw material solution becomes a supersaturation state in the crystallization part 2 to obtain crystals grown and formed by the magnetic field action of the magnetic force generation means 6 so as to be mutually aligned in crystallographic axis direction. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は医療品関係、食品関
係、光学品関係、電気デバイス素材、テープフィラー素
材等の材料関係等において適用される晶析装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystallizer applied to medical products, food products, optical products, electric device materials, tape filler materials and the like.

【0002】[0002]

【従来の技術】この種の従来の晶析装置として、図6の
如く上方に配設した蒸発部aとその下方に配設した晶析
部bとからなり、該蒸発部aから該晶析部b内へ導入管
cにより連結されていると共に、該晶析部bから該蒸発
部aへリターン管dにより連結されており、かつ該晶析
部bから分級脚eが垂下し、前記リターン管dへ供給管
fより供給された原料液は前記蒸発部aにおいて一部蒸
発し、濃縮された原料液は前記導入管cを経て前記晶析
部bにおいて過飽和状態となって結晶化されていき、残
った原料液はリターン管dを経て前記蒸発部aへ戻ると
共に供給管fより原料液が補充され、晶析部bにおいて
形成された結晶は前記分級脚eより得ることができる装
置が知られている。
2. Description of the Related Art As a conventional crystallization apparatus of this type, as shown in FIG. 6, it comprises an evaporation part a arranged above and a crystallization part b arranged below it, and the crystallization part from this evaporation part a. The return pipe d is connected from the crystallization part b to the evaporation part a by the introduction pipe c into the part b, and the classifying leg e hangs from the crystallization part b. The raw material liquid supplied from the supply pipe f to the pipe d is partially evaporated in the evaporation part a, and the concentrated raw material liquid is crystallized in the crystallization part b via the introduction pipe c in a supersaturated state. Then, the remaining raw material liquid returns to the evaporation part a via the return pipe d, and the raw material liquid is replenished from the supply pipe f, and the crystal formed in the crystallization part b can be obtained from the classification leg e. Are known.

【0003】[0003]

【発明が解決しようとする課題】この従来の晶析装置に
よれば、晶析部bにおいて単に過飽和状態の原料液から
結晶を成長形成させているので、得られた成長結晶の配
向は図7の如く種々にわたり、薬理効果の高い均一な薬
品等が得られない問題点があった。
According to this conventional crystallizer, the crystal is simply grown from the raw material liquid in the supersaturated state in the crystallizing part b, so that the orientation of the obtained grown crystal is as shown in FIG. As described above, there is a problem in that a uniform drug or the like having a high pharmacological effect cannot be obtained.

【0004】本発明はこのような問題点を解消し配向性
即ち結晶軸方向が一致した結晶が得られる晶析装置を提
供することを目的とする。
It is an object of the present invention to solve the above problems and to provide a crystallizer capable of obtaining crystals in which the orientation, that is, the crystal axis directions are the same.

【0005】[0005]

【課題を解決するための手段】この目的を達成すべく本
発明は晶析部に磁力発生手段を設けたことを特徴とす
る。
To achieve this object, the present invention is characterized in that a magnetic force generating means is provided in the crystallization part.

【0006】[0006]

【発明の実施の形態】本発明の第1の実施の形態を図1
により説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a first embodiment of the present invention.
Will be described.

【0007】1は蒸発部、2は晶析部を示し、該蒸発部
1は容器にヒータ等の加熱手段を具備して形成され、該
蒸発部1からその下方に位置する前記晶析部2の容器2
a内の中心部の下方部に垂下する導入管3を設けて該導
入管3により前記蒸発部1と前記晶析部2との間を連結
した。
Reference numeral 1 denotes an evaporation portion, 2 denotes a crystallization portion, the evaporation portion 1 is formed by equipping a container with heating means such as a heater, and the crystallization portion 2 located below the evaporation portion 1 Container 2
An introducing pipe 3 is provided so as to hang down in the lower part of the central portion in a, and the evaporating part 1 and the crystallization part 2 are connected by the introducing pipe 3.

【0008】又、前記晶析部2の容器2aの側壁の上方
部から前記蒸発部1に至るリターン管4を連通連結し、
該リターン管4の途中に原料液の供給管5を連通接続し
た。
Further, a return pipe 4 extending from the upper portion of the side wall of the container 2a of the crystallization part 2 to the evaporation part 1 is connected and connected,
A raw material liquid supply pipe 5 was connected in the middle of the return pipe 4.

【0009】6は磁力発生手段を示し、該磁力発生手段
6は円筒状の電磁石からなり、前記晶析部2の容器2a
の側壁の外方にこれを囲繞するように設けられている。
Reference numeral 6 denotes a magnetic force generating means, which is composed of a cylindrical electromagnet and is used for the container 2a of the crystallization part 2.
It is provided on the outside of the side wall so as to surround it.

【0010】7は結晶を流下させる管状の分級脚を示
し、該分級脚7は該晶析部2の容器2aの底面から垂下
するように設けられている。
Reference numeral 7 denotes a tubular classifying leg through which crystals fall, and the classifying leg 7 is provided so as to hang from the bottom surface of the container 2a of the crystallization part 2.

【0011】次に前記第1の実施の形態の作用を説明す
る。
Next, the operation of the first embodiment will be described.

【0012】供給管5から原料液を供給すると、該原料
液は、リターン管4を経て蒸発部1に至り、該蒸発部1
において一部が蒸発して濃縮される。
When the raw material liquid is supplied from the supply pipe 5, the raw material liquid reaches the evaporation unit 1 through the return pipe 4, and the evaporation unit 1
At, a part is evaporated and concentrated.

【0013】そして濃縮された原料液は導入管3より晶
析部2の容器2aの中心部の下方部に流出する。
Then, the concentrated raw material liquid flows out from the introduction pipe 3 to the lower part of the center part of the container 2a of the crystallization part 2.

【0014】該容器2a内において、濃縮された原料液
は周囲の溶液によって冷却され過飽和状態となって徐々
に上方へ流動し、この上方への流動中に晶析化しながら
結晶が成長形成する。このときに、容器2aが外方の電
磁石6により発生する該容器2a内の磁場力作用により
結晶は図2の如く結晶軸方向が一致して成長形成する。
即ち磁場力による磁化率が最小となる磁場方向に結晶は
その結晶軸方向が平行となって成長する。
In the container 2a, the concentrated raw material liquid is cooled by the surrounding solution, becomes supersaturated, and gradually flows upward, and crystals grow and form while crystallizing during the upward flow. At this time, due to the action of the magnetic field in the container 2a generated by the outer electromagnet 6 in the container 2a, crystals grow and form with their crystal axis directions aligned as shown in FIG.
That is, the crystal grows with its crystal axis direction parallel to the magnetic field direction in which the magnetic susceptibility due to the magnetic field force is minimized.

【0015】このように結晶化された後の残りの原料液
はリターン管4により帰還されて蒸発部1に戻される。
このとき該リターン管4へ供給管5より原料液が補充さ
れ、又、容器2a内で形成された結晶軸方向が一致した
結晶は分級脚7より外部へ取り出される。
The remaining raw material liquid after being crystallized in this way is returned to the evaporator 1 by the return pipe 4.
At this time, the raw material liquid is replenished to the return pipe 4 from the supply pipe 5, and the crystals formed in the container 2a and having the same crystal axis direction are taken out from the classifying leg 7.

【0016】ここで、発明者はL−アラニンの液を晶析
部の容器内に入れて過飽和の状態にし、電磁石による磁
場の強さを種々変更して配向率Rを求めた結果が図3の
グラフである。
Here, the inventor put the liquid of L-alanine into the container of the crystallization part to make it supersaturated, and variously changed the strength of the magnetic field by the electromagnet to obtain the orientation ratio R. The result is shown in FIG. Is a graph of.

【0017】同グラフにおいて横軸を磁場の強さテラス
(T)とし、縦軸を配向率(R)とすると、配向率Rは となり、それぞれの結晶の配向即ち結晶軸方向の角度差
θが3°より小である析出結晶の測定全析出結晶に対す
る割合は、磁場の強さが1T以上になると約100%と
なることが判明した。
In the graph, when the horizontal axis is the magnetic field strength terrace (T) and the vertical axis is the orientation ratio (R), the orientation ratio R is Therefore, it was found that the ratio of the orientation of each crystal, that is, the precipitated crystal in which the angle difference θ in the crystal axis direction is smaller than 3 ° to the total measured precipitated crystal is about 100% when the magnetic field strength is 1 T or more. did.

【0018】尚、このグラフの曲線は他の原料液につい
ても同様の傾向がみられた。又、この実施の形態では、
磁力発生手段6を容器2aの外側に設けたが、該磁力発
生手段6を該容器2aの内側に設けてもよい。
The curve of this graph showed the same tendency for other raw material liquids. Also, in this embodiment,
Although the magnetic force generating means 6 is provided outside the container 2a, the magnetic force generating means 6 may be provided inside the container 2a.

【0019】図4は本発明の第2の実施の形態を示し、
この実施の形態においては、蒸発部1と晶析部2とを共
通の容器8とすると共に該晶析部2の個所の容器8bが
前記蒸発部1の個所の容器8aより大径に形成して該蒸
発部1の個所の容器8aの側壁の下方部が前記晶析部2
の個所の容器8b内の途中まで下方に延長して仕切壁9
に形成し、該仕切壁9によりその内方の結晶形成部2a
と外方の微小結晶除去部2bとに仕切り、該仕切壁9内
の中央部にドラフトチューブ10を設けた。又、リター
ン管4aは前記容器8bの側壁の下方部より該容器8b
の底面のドラフトチューブ10の下方位置に連結すると
共に該リターン管4aの途中に原料液の供給管5を連通
接続した。
FIG. 4 shows a second embodiment of the present invention,
In this embodiment, the evaporation part 1 and the crystallization part 2 are formed as a common container 8, and the container 8b at the part of the crystallization part 2 is formed to have a larger diameter than the container 8a at the part of the evaporation part 1. The lower portion of the side wall of the container 8a at the evaporation portion 1 is the crystallization portion 2
Partition wall 9 extending downward partway inside container 8b
And the partition wall 9 forms a crystal forming portion 2a on the inner side thereof.
The outer microcrystal removing portion 2b was partitioned, and the draft tube 10 was provided in the center of the partition wall 9. In addition, the return pipe 4a is provided from the lower portion of the side wall of the container 8b.
The raw material liquid supply pipe 5 was connected to the lower portion of the draft tube 10 on the bottom surface of the No. 3 and the return pipe 4a.

【0020】かくて、供給管5からの原料液はリターン
管4aからの戻り液と共に加熱されて晶析部2の容器8
b内へ、その底面から流入し、ドラフトチューブ10内
を上昇してから該ドラフトチューブ10の外側を流下
し、その流下した原料液の一部が該ドラフトチューブ1
0内を上昇すると共に残りの原料液は仕切壁9の外方の
微小結晶除去部2bを上昇してリターン管4aに至り、
該リターン管4aの途中で供給管5より原料液が補充さ
れて前記容器8b内へ流入する。
Thus, the raw material liquid from the supply pipe 5 is heated together with the return liquid from the return pipe 4a, and the container 8 of the crystallization part 2 is heated.
b, it flows from the bottom surface thereof, rises in the draft tube 10 and then flows down the outside of the draft tube 10, and a part of the flowing-down raw material liquid is generated in the draft tube 1
While rising in 0, the remaining raw material liquid rises in the minute crystal removing portion 2b outside the partition wall 9 and reaches the return pipe 4a.
The raw material liquid is replenished from the supply pipe 5 in the middle of the return pipe 4a and flows into the container 8b.

【0021】容器8内における原料液の前述の流動中、
蒸発部1の容器8a内において原料液の液面が蒸発して
該原料液が過飽和状態となって結晶化され、この結晶の
結晶化過程に電磁石6の磁場力作用によって結晶軸方向
が一致してくる。
During the above-mentioned flow of the raw material liquid in the container 8,
In the container 8a of the evaporation unit 1, the liquid surface of the raw material liquid evaporates and the raw material liquid is supersaturated and crystallized. The crystal axis direction coincides with the crystallization process of the crystal due to the magnetic force of the electromagnet 6. Come on.

【0022】そしてこの第2の実施の形態においては前
記ドラフトチューブ10によりその内外で原料液の流れ
が整流分化されて磁場力の作用を受けて晶析化されるの
で、効率よく結晶軸方向が一致した結晶が得られる。
尚、本実施の形態の図4では円筒状の磁力発生手段6を
容器8bの外側に設けたが、これは容器8bの内側に設
けるようにしてもよい。
In the second embodiment, the flow of the raw material liquid is rectified and differentiated inside and outside by the draft tube 10 and crystallized by the action of the magnetic field force. Consistent crystals are obtained.
Although the cylindrical magnetic force generating means 6 is provided outside the container 8b in FIG. 4 of the present embodiment, it may be provided inside the container 8b.

【0023】図5は本発明の第3の実施の形態を示し、
この実施の形態においては磁力発生手段6が容器8内の
仕切壁9に設けられ、第2の実施の形態と比べて磁場の
強さが効率的に大となる。ここで前記磁力発生手段6
は、前記仕切壁9の内側に設けても又は外側に設けるよ
うにしてもよい。
FIG. 5 shows a third embodiment of the present invention.
In this embodiment, the magnetic force generating means 6 is provided on the partition wall 9 in the container 8, and the strength of the magnetic field is efficiently increased as compared with the second embodiment. Here, the magnetic force generating means 6
May be provided inside the partition wall 9 or outside the partition wall 9.

【0024】尚、磁力発生手段6として、電磁石以外に
永久磁石或いは超電導磁石を用いてもよい。又、これら
磁力発生手段6にはコーティングを施して液封に形成す
るとよい。
As the magnetic force generating means 6, a permanent magnet or a superconducting magnet may be used instead of the electromagnet. Further, these magnetic force generating means 6 may be coated to form a liquid seal.

【0025】又前記実施の形態では、本発明を蒸発式晶
析装置に適用した例を示したが、本発明を冷却式晶析装
置等の他の方式の晶析装置に適用してもよい。
Further, in the above embodiment, an example in which the present invention is applied to the evaporation type crystallizer is shown, but the present invention may be applied to other type of crystallizer such as a cooling type crystallizer. .

【0026】[0026]

【発明の効果】このように本発明によると、晶析部に磁
力発生手段を設けたので、結晶軸方向が一致した結晶が
得られ、かくて薬理効果の向上した医療材料素材や光透
過性や光信号伝達などの特性が向上した光学的材料素材
等がろ過性もよく容易に得られる効果を有する。
As described above, according to the present invention, since the magnetic force generating means is provided in the crystallization part, crystals having the same crystal axis direction can be obtained, and thus, the medical material material or the light transmissive material having an improved pharmacological effect is obtained. An optical material having improved characteristics such as optical signal transmission and the like has an effect that it can be easily obtained with good filterability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施の形態の説明図である。FIG. 1 is an explanatory diagram of a first embodiment of the present invention.

【図2】本発明の結晶の成長形成状態を示す説明図であ
る。
FIG. 2 is an explanatory diagram showing a growth and formation state of crystals of the present invention.

【図3】磁場の強さと結晶の配向率の関係を示すグラフ
である。
FIG. 3 is a graph showing the relationship between magnetic field strength and crystal orientation ratio.

【図4】本発明の第2の実施の形態の説明図である。FIG. 4 is an explanatory diagram of a second embodiment of the present invention.

【図5】本発明の第3の実施の形態の説明図である。FIG. 5 is an explanatory diagram of a third embodiment of the present invention.

【図6】従来の晶析装置の説明図である。FIG. 6 is an explanatory diagram of a conventional crystallizer.

【図7】従来の晶析装置による結晶の成長形成状態を示
す説明図である。
FIG. 7 is an explanatory view showing a state of crystal growth and formation by a conventional crystallizer.

【符号の説明】[Explanation of symbols]

1 蒸発部 2 晶析部 2a 容器 6 磁力発生手段 9 仕切壁 10 ドラフトチューブ 1 Evaporator 2 Crystallization part 2a container 6 Magnetic force generating means 9 partition walls 10 Draft tube

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) B01D 9/02 605 B01D 9/02 605 609 609B 611 611Z 621 621 (72)発明者 小川 薫 岩手県盛岡市高松四丁目17−19−102Front page continuation (51) Int.Cl. 7 Identification code FI theme code (reference) B01D 9/02 605 B01D 9/02 605 609 609 609B 611 611Z 621 621 (72) Inventor Kaoru Ogawa 4-chome Takamatsu, Morioka, Iwate Prefecture 17-19-102

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 晶析部に磁力発生手段を設けた晶析装
置。
1. A crystallizer in which a magnetic force generating means is provided in the crystallizing portion.
【請求項2】 蒸発部と該蒸発部に連通する晶析部とか
らなる晶析装置の該晶析部に磁力発生手段を設けた晶析
装置。
2. A crystallizer comprising a vaporizer and a crystallizer communicating with the vaporizer, wherein a magnetic force generating means is provided in the crystallizer.
【請求項3】 前記晶析部の容器の壁面に前記磁力発生
手段を設けた請求項1又は請求項2に記載の晶析装置。
3. The crystallizer according to claim 1, wherein the magnetic force generating means is provided on the wall surface of the container of the crystallization part.
【請求項4】 前記晶析部の容器内に円筒状の仕切壁を
介して中央部の結晶形成部と周辺部の微小結晶除去部を
形成し、前記仕切壁に前記磁力発生手段を設けた請求項
2に記載の晶析装置。
4. A crystal forming part in a central part and a fine crystal removing part in a peripheral part are formed in a container of the crystallization part through a cylindrical partition wall, and the magnetic force generating means is provided on the partition wall. The crystallizer according to claim 2.
【請求項5】 前記仕切壁内に略円筒形状のドラフトチ
ューブを設けた請求項3又は請求項4に記載の晶析装
置。
5. The crystallizer according to claim 3, wherein a substantially cylindrical draft tube is provided in the partition wall.
【請求項6】 前記磁力発生手段は電磁石又は永久磁石
からなる請求項1乃至請求項5のいずれか1に記載の晶
析装置。
6. The crystallizer according to claim 1, wherein the magnetic force generating means comprises an electromagnet or a permanent magnet.
JP2002058556A 2002-03-05 2002-03-05 Crystallizer Expired - Fee Related JP4187446B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002058556A JP4187446B2 (en) 2002-03-05 2002-03-05 Crystallizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002058556A JP4187446B2 (en) 2002-03-05 2002-03-05 Crystallizer

Publications (2)

Publication Number Publication Date
JP2003251101A true JP2003251101A (en) 2003-09-09
JP4187446B2 JP4187446B2 (en) 2008-11-26

Family

ID=28668497

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