JP2003249687A - Semiconductor device and optical module using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device miniaturized while simply maintaining overall configuration of an optical module and capable of accurately detecting light intensity of a light emitting element. <P>SOLUTION: The semiconductor device is constituted of successively applying the light emitting element 2, and a light reflection layer 3 for reflecting light from the element 2 to the side of a monocrystal substrate 1 having translucency on the upper surface of the substrate 1. An inclined face 1a for reflecting light from the element 2 to a direction approximately parallel with the upper surface of the substrate 1 is formed on the lower surface of the substrate 1 located just under the element 2, and a light receiving element 4 for detecting the intensity of light is formed in the vicinity of the inside of the slope 1a or on the slope 1a. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an LED (Light Emitter).
The present invention relates to a semiconductor device such as an itting diode) or a semiconductor laser and an optical module using the same.

[0002]

2. Description of the Related Art Conventionally, LEDs (Light Emitting Dio)
semiconductor devices are used as light emitting devices such as de) and semiconductor lasers.

As such a conventional semiconductor device, for example, as shown in FIG. 6, a single crystal substrate 1 made of GaAs or the like is used.
There is known a structure in which a light emitting element 12 such as an LED is disposed on the upper surface of 1. When a predetermined electric power is applied to the light emitting element 12, electrons and holes are formed near a pn junction existing in the light emitting element. And recombine with each other, convert energy generated by the recombination into light, and emit the obtained light above the light emitting element 12 to function as a semiconductor device.

When an optical module is constructed by using the above-mentioned semiconductor device, it is common to place the semiconductor device and the optical fiber on the upper surface of the supporting substrate, as shown in FIG. 7, and in such a case, In order to allow the light emitted from the light emitting element 12 to enter the optical fiber, it is necessary to reflect such light in the lateral direction (direction parallel to the upper surface of the single crystal substrate 11).

[0005]

However, in the above-mentioned conventional semiconductor device, in order to laterally reflect the light of the light emitting element 12 emitted upward, a large mirror member is provided right above the semiconductor device. Had to be separately arranged, and the number of parts of the optical module in which the semiconductor device was incorporated was increased, and there was a drawback that the overall configuration became complicated and large.

Further, in this case, in order to accurately reflect the light of the light emitting element 12 into the optical fiber, it is necessary to accurately position the semiconductor device and the mirror member while considering the positional relationship between them. However, it has a drawback that the assembling work is complicated and the productivity cannot be improved.

Further, in order to keep the light intensity of the light emitting element 12 constant, it is conventionally required to accurately detect the light intensity of the light emitting element 12, but an effective means has not been found yet. .

The present invention has been devised in view of the above-mentioned drawbacks, and it is an object of the present invention to make it possible to reduce the size of the light emitting device while keeping the overall structure of the light emitting device simple. It is to provide a semiconductor device capable of detecting.

[0009]

The semiconductor device of the present invention comprises:
In a semiconductor device in which a light-emitting element and a light-reflecting layer that reflects the light of the light-emitting element toward the single-crystal substrate are sequentially deposited on the upper surface of a light-transmitting single-crystal substrate, a semiconductor device is provided directly below the light-emitting element. An inclined surface that reflects the light of the light-emitting element in a direction substantially parallel to the upper surface of the single crystal substrate is formed on the lower surface of the positioned single crystal substrate, and a light intensity detecting member is provided near or on the inside of the inclined surface. It is characterized in that a light receiving element is provided.

Further, the semiconductor device of the present invention is characterized in that the light receiving element is a photodiode formed by doping an impurity into a single crystal substrate.

Further, the semiconductor device of the present invention is characterized in that the inclined surface of the single crystal substrate is inclined by about 45 ° with respect to the upper surface of the single crystal substrate.

Furthermore, in the semiconductor device of the present invention, the single crystal substrate has a zinc blende type crystal structure, and the plane orientation of the upper surface thereof is 9.2 in the <110> direction from the (001) plane.
It is characterized in that it is inclined by 10.degree.

Furthermore, the semiconductor device of the present invention is characterized in that a reflecting film is deposited on the inclined surface of the single crystal substrate so as to cover the entire light receiving element.

Furthermore, in the semiconductor device of the present invention, a mirror layer for resonating / amplifying the light of the light emitting element with the light reflecting layer is interposed between the single crystal substrate and the light emitting element. It is characterized by.

Furthermore, in the semiconductor device of the present invention, a mirror layer for resonating and amplifying the light of the light emitting element with the light reflecting layer is interposed between the single crystal substrate and the light emitting element, In addition, the reflective film is deposited on the entire lower surface of the single crystal substrate including the inclined surface.

In the optical module of the present invention, the above-mentioned semiconductor device and optical fiber are provided on the upper surface of the support substrate.
The upper surface of the single crystal substrate and the upper surface of the support substrate are opposed to each other, and the end surface of the single crystal substrate from which the light of the light-emitting element is emitted and one end of the optical fiber are adjacent to each other. is there.

According to the present invention, a light emitting element and a light reflection layer for reflecting the light of the light emitting element to the single crystal substrate side are sequentially deposited on the upper surface of the translucent single crystal substrate, and at the same time, Since the lower surface of the single crystal substrate located immediately below the light emitting element is formed with an inclined surface that is inclined by about 45 ° with respect to the upper surface of the single crystal substrate, the light of the light emitting element emitted to the single crystal substrate side is formed. Are reflected by the inclined surface in a direction substantially parallel to the upper surface of the single crystal substrate. Therefore, even when the semiconductor device and the optical fiber are provided side by side on the support substrate to form the optical module, the light of the light emitting element is reflected right above the semiconductor device in a direction parallel to the upper surface of the single crystal substrate. Since it is not necessary to separately dispose a large mirror member, the structure of the optical module can be simply maintained and the entire structure can be downsized.

Further, in this case, since the above-mentioned mirror member is unnecessary, if the semiconductor device is only aligned with the supporting substrate or the optical fiber without considering the positional relationship between the semiconductor device and the mirror member, the light emitting position of the light emitting element can be adjusted. It is possible to make an accurate adjustment, simplify the work of assembling the optical module, and improve the productivity of the optical module.

Further, according to the present invention, since the light receiving element for detecting the light intensity is provided in the vicinity of or on the inclined surface where the light of the light emitting element strikes, the light emitted from the light emitting element is Most of the light strikes the light receiving element, and the light intensity of the light emitting element can be accurately detected.

Further, according to the present invention, by using a photodiode formed by doping an impurity into the single crystal substrate as the light receiving element, the light receiving element is arranged near the inside of the inclined surface. Becomes Therefore, most of the light emitted from the light emitting element directly passes through the area where the light receiving element is formed, and the light intensity of the light emitting element can be detected extremely accurately.

Further, in this case, since the light receiving element is integrally formed inside the single crystal substrate, it does not largely project outside the single crystal substrate, and the semiconductor device is handled when the optical module is assembled. In addition to being simple, the semiconductor device can be kept small.

Furthermore, according to the present invention, the single crystal substrate is formed of a material having a zinc blende type crystal structure,
Moreover, the plane orientation of the upper surface is <110> from the (001) plane.
By setting the surface inclined at 9.2 ° to 10.2 ° in the direction, an inclined surface of about 45 ° can be formed with high accuracy on the lower surface of the single crystal substrate by conventionally well-known anisotropic etching. High productivity of semiconductor devices is maintained.

Furthermore, according to the present invention, a reflection film is deposited on the inclined surface of the single crystal substrate so as to cover the entire light receiving element, so that most of the light of the light emitting element which hits the inclined surface is covered. Is reflected in a direction substantially parallel to the upper surface of the single crystal substrate, which can increase the reflectance of the light of the light emitting element, and also allows the light from the outside to enter the light receiving element. The reflection film allows the light receiving element to be favorably reflected to the outside of the light receiving element, whereby the light receiving element can be operated normally and the light detection accuracy can be improved.

Still further, according to the present invention, a semiconductor laser is provided between the single crystal substrate and the light emitting element with a mirror layer interposed for resonating and amplifying light of the light emitting element with the light reflecting layer. In addition to the above structure, by depositing the reflection film over the entire lower surface of the single crystal substrate including the inclined surface, light from the outside is emitted to the light emitting element between the mirror layer and the light reflection layer through the single crystal substrate. It is possible to effectively prevent the light from entering the semiconductor device, which allows the semiconductor device to stably function as a semiconductor laser.

[0025]

DETAILED DESCRIPTION OF THE INVENTION The present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention, in which 1 is a single crystal substrate, 1a.
Is an inclined surface, 2 is a light emitting element, 3 is a light reflecting layer, and 4 is a light receiving element.

The single crystal substrate 1 is formed of a translucent compound semiconductor having a zinc blende type crystal structure, such as GaAs, so that the upper surface and the lower surface are arranged substantially parallel to each other. Is provided with a light emitting element 2, a light reflection layer 3, an electrode (not shown), etc., and functions as a support base material for supporting these.

In the single crystal substrate 1, the upper surface has a plane orientation of 8.2 ° to 11.2 in the <110> direction from the (001) plane.
It is formed so as to match the inclined surface, and an inclined surface 1a is provided on the lower surface immediately below the light emitting element 2.

The inclined surface 1a is set to incline about 45 ° (allowable range 43 ° to 47 °) with respect to the upper surface of the single crystal substrate 1, and the light emitting element 2 emitted to the single crystal substrate side. Light is reflected in the lateral direction (direction substantially parallel to the upper surface of the single crystal substrate 1).

When such a single crystal substrate 1 is made of GaAs, for example, a GaAs ingot (lump) formed by a conventionally well-known vertical Bridgman method (VB method) or the like is sliced into a predetermined thickness and surface-polished. By doing so, a plate body made of GaAs is formed, and the lower surface of the obtained plate body is formed by adopting conventionally known photoetching to form the inclined surface 1a.

In this case, the single crystal substrate 1 is made of a material having a zinc blende type crystal structure, and the plane orientation of its upper surface is 8.2 ° in the <110> direction from the (001) plane.
Since it is set so as to match the surface inclined by 11.2 °, it becomes possible to easily and accurately form the inclined surface 1a by conventionally known anisotropic etching or the like. Highly maintained. In order to form the inclined surface 1a more easily and with high accuracy, the surface orientation of the upper surface of the single crystal substrate 1 should be inclined from the (001) surface in the <110> direction by 9.2 ° to 10.2 °. It is preferable to match them.

The light emitting element 2 provided on the upper surface of the single crystal substrate 1 is In _x Al _y Ga _{1-x- y} As _z P _1-z (where x, y and z are 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦
1, 0 ≦ x + y ≦ 1) etc., and is formed by sequentially stacking a p-type semiconductor layer and an n-type semiconductor layer made of a GaAs-based single crystal thin film, and the light-emitting element 2 is formed with an electrode (not shown) interposed When a predetermined power is applied, holes are injected into the n-type semiconductor layer and electrons are injected into the p-type semiconductor layer, and they are recombined in the vicinity of the pn junction, so that the light emitting element 2 emits light.

The light emitting element 2 may be formed, for example, by a well-known MOCVD method (Metal Organic Chemical Vapor Deposer).
It is formed by sequentially epitaxially growing a GaAs-based single crystal thin film such as AlGaAs on the upper surface of the single crystal substrate 1 by using the ition) method or the like.

Further, on the light emitting element 2, there is provided a light reflection layer 3 formed by alternately laminating two kinds of single crystal thin films such as GaAs and AlGaAs in a periodical manner (20 to 30 cycles). , The light emitting element 2 emitted to the light reflecting layer 3 side
The light is reflected to the single crystal substrate side.

At this time, since the lower surface of the single crystal substrate 1 located directly below the light emitting element 2 is provided with an inclined surface inclined by about 45 ° with respect to the upper surface of the single crystal substrate 1,
The light emitted from the light emitting element 2 to the single crystal substrate side is reflected laterally on the inclined surface 1a. Therefore, even when configuring an optical module using a semiconductor device,
There is no need to separately arrange a large mirror member for directly reflecting the light of the light emitting element 2 directly above the semiconductor device,
The configuration of the optical module can be maintained simple, and the entire structure can be downsized.

The above-mentioned light reflecting layer 3 is formed, for example, by the well-known MOCVD method (Metal Organic Chemical Vapor D).
(eposition) method, GaAs and AlGaAs
By alternately epitaxially growing the single crystal thin film of (1) on the light emitting element 2, a thin film having a thickness of 0.5 μm to 2.0 μm is formed.

On the other hand, a light receiving element 4 for detecting light intensity is provided on the inclined surface 1a of the single crystal substrate 1.

The light receiving element 4 is made of, for example, Si, Ge,
It has a structure in which a p-type semiconductor layer and an n-type semiconductor layer made of a single crystal thin film such as InGaAs are sequentially stacked, and when light of the light emitting element 2 is incident therein, electrons and holes are formed near the pn junction. Are generated, electrons are injected into the n-type semiconductor layer, and holes are injected into the p-type semiconductor layer, and these are extracted as an electric signal through an electrode (not shown) to detect the light intensity of the light emitting element 2. .

As described above, since the light receiving element 4 for detecting the light intensity is provided on the inclined surface 1a on which the light of the light emitting element 2 hits, most of the light emitted from the light emitting element 2 hits the light receiving element 4. Therefore, the light intensity of the light emitting element 2 can be accurately detected.

When the light receiving element 4 is made of InGaAs, for example, a conventionally well-known MOCVD method (Metal Or
ganic Chemical Vapor Deposition) method, etc.
It is formed by sequentially epitaxially growing a single crystal thin film of nGaAs on the inclined surface 1a.

When an optical module is constructed using the above-mentioned semiconductor device A, the semiconductor device A and the optical fiber C are supported on the upper surface of the supporting substrate B and the upper surface of the single crystal substrate 1 as shown in FIG. The upper surface of the substrate B is opposed to
In addition, the end face of the single crystal substrate 1 from which the light of the light emitting element 2 is emitted and one end of the optical fiber C are placed close to each other.

When the optical module is used, the light emitted from the light emitting element 2 of the semiconductor device A to the single crystal substrate side is reflected laterally by the inclined surface 1a, and the reflected light is reflected at one end of the optical fiber C. It works by being incident on.

At this time, as described above, in the semiconductor device A, the light of the light emitting element 2 emitted to the single crystal substrate side can be emitted in the direction parallel to the upper surface of the single crystal substrate 1. Even when the optical module is configured by using, it is not necessary to separately dispose a large mirror member for light reflection directly above the semiconductor device A, and the configuration of the optical module can be simply maintained. In addition, the entire structure can be downsized.

Further, in this case, since the mirror member is not necessary, if only the alignment of the semiconductor device A with the support substrate B and the optical fiber C is performed without considering the positional relationship between the semiconductor device A and the mirror member, the light emitting element 2 can be manufactured. The light emission position can be adjusted accurately, the assembly work of the optical module is simplified, and the productivity can be improved.

The present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the gist of the present invention.

For example, in the above-described embodiment, the light receiving element 4 is formed on the inclined surface 1a of the single crystal substrate 1, but instead of this, as shown in FIG. 3, the light receiving element 4'is formed. May be formed in the vicinity of the inside of the inclined surface 1'a. In this case, most of the light emitted from the light emitting element 2 directly passes through the formation area of the light receiving element 4 ', and the light emitting element 4'is formed. The light intensity of 2 will be detected very accurately.

Moreover, in this case, since the light receiving element 4'formed near the inner side of the inclined surface 1'a does not project to the outside of the single crystal substrate 1 ', handling of the semiconductor device at the time of assembling the optical module, etc. In addition to being simple, the semiconductor device can be kept small. As such a light receiving element 4 ', a photodiode formed by doping impurities such as zinc inside the single crystal substrate 1'is preferably used.

In the above embodiment, as shown in FIG. 4, the inclined surface 1'provided on the lower surface of the single crystal substrate 1 '.
On a, a reflective film 5 composed of a metal film such as aluminum or a multilayer film in which titanium oxide, silicon oxide or the like is periodically sequentially laminated is applied so as to cover the entire surface of the light receiving element 4. For example, most of the light emitted from the light emitting element 2 that hits the inclined surface 1'a is reflected in a direction substantially parallel to the upper surface of the single crystal substrate 1 ', thereby increasing the light reflectance to 90%.
% To 99%, the light from the outside that is about to enter the light receiving element 4 is well reflected by the reflection film 5 to the outside of the light receiving element 4. Can be operated normally to improve the light detection accuracy. When the reflection film 5 is made of aluminum, it is formed into a predetermined shape and a predetermined thickness by adopting conventionally known sputtering, photolithography technique, and etching technique.

Further, in the above embodiment, the mirror layer 6 for resonating and amplifying the light of the light emitting element 2 with the light reflecting layer 3 is interposed between the single crystal substrate 1 and the light emitting element 2. Thus, the light emitting element 2, the light reflection layer 3 and the mirror layer 6 may constitute a vertical cavity type semiconductor laser. At this time, as shown in FIG. 5, if the reflection film 5 ′ is deposited on the entire lower surface of the single crystal substrate 1 including the inclined surface 1 a, light from the outside is transmitted through the single crystal substrate 1. It is possible to effectively prevent the light from entering the light emitting element 2 between the light reflection layer 3 and the mirror layer 6, and thereby the semiconductor device can be stably operated as a semiconductor laser. The reflective film 5'is formed of the same material as the reflective film 5, and the mirror layer 6 is formed of two kinds of single crystal thin films such as GaAs and AlGaAs alternately and periodically as in the light reflective layer 3. What is laminated (20 cycles to 30 cycles) is preferably used.

Further, in the above-mentioned embodiment, the single crystal substrate 1 is made of GaAs, but instead of this, the single crystal substrate is made of Si, GaP, GaN, GaSb,
It may be formed of another compound semiconductor such as InP or InAs.

Furthermore, in the above embodiment, when the light emitting element 2, the light reflecting layer 3 and the light receiving element 4 are formed, M
Although the OCVD method is adopted, other methods,
For example, it may be formed by the MBE (Molecular Beam Epitaxy) method or the like.

Furthermore, in the above-mentioned embodiment, if the supporting substrate is made of silicon having a relatively high thermal conductivity, the heat generated by the light emission of the light emitting element 2 is very thin. The light is favorably transmitted and absorbed through the layer 3 to the supporting substrate side, and even when the semiconductor device A is used for a long time, the inside of the light emitting element 2 does not become excessively hot. The light emitting characteristics of the light emitting element 2 can be kept normal for a long period of time.

[0052]

According to the present invention, a light emitting element and a light reflecting layer for reflecting the light of the light emitting element to the single crystal substrate side are sequentially deposited on the upper surface of the translucent single crystal substrate. In addition, the lower surface of the single crystal substrate located directly below the light emitting element is formed with an inclined surface that is inclined by about 45 ° with respect to the upper surface of the single crystal substrate. The light of the light emitting element is reflected by the inclined surface in a direction substantially parallel to the upper surface of the single crystal substrate. Therefore, even when the semiconductor device and the optical fiber are provided side by side on the support substrate to form the optical module,
It is not necessary to separately arrange a large mirror member for reflecting the light of the light emitting element in the direction parallel to the upper surface of the single crystal substrate, and the structure of the optical module can be simply maintained and the entire structure is small. Can be converted.

Further, in this case, since the above-mentioned mirror member is not necessary, if the semiconductor device is only aligned with the supporting substrate or the optical fiber without considering the positional relationship between the semiconductor device and the mirror member, the light emission position of the light emitting element can be adjusted. It is possible to make an accurate adjustment, simplify the work of assembling the optical module, and improve the productivity of the optical module.

Further, according to the present invention, since the light receiving element for detecting the light intensity is provided near or on the inside of the inclined surface on which the light of the light emitting element strikes, the light emitted from the light emitting element is Most of the light strikes the light receiving element, and the light intensity of the light emitting element can be accurately detected.

Further, according to the present invention, by using a photodiode formed by doping impurities in the single crystal substrate as the light receiving element, the light receiving element is arranged near the inside of the inclined surface. Becomes Therefore, most of the light emitted from the light emitting element directly passes through the area where the light receiving element is formed, and the light intensity of the light emitting element can be detected extremely accurately.

Further, in this case, since the light receiving element is integrally formed inside the single crystal substrate, the light receiving element does not largely project outside the single crystal substrate, and the semiconductor device is handled when the optical module is assembled. In addition to being simple, the semiconductor device can be kept small.

Further, according to the present invention, the single crystal substrate is formed of a material having a zinc blende type crystal structure,
Moreover, the plane orientation of the upper surface is <110> from the (001) plane.
By setting the surface inclined at 9.2 ° to 10.2 ° in the direction, an inclined surface of about 45 ° can be formed with high accuracy on the lower surface of the single crystal substrate by conventionally well-known anisotropic etching. High productivity of semiconductor devices is maintained.

Furthermore, according to the present invention, a reflection film is deposited on the inclined surface of the single crystal substrate so as to cover the entire light receiving element, so that most of the light of the light emitting element which hits the inclined surface is covered. Is reflected in a direction substantially parallel to the upper surface of the single crystal substrate, which can increase the reflectance of the light of the light emitting element, and also allows the light from the outside to enter the light receiving element. The reflection film allows the light receiving element to be favorably reflected to the outside of the light receiving element, whereby the light receiving element can be operated normally and the light detection accuracy can be improved.

Still further, according to the present invention, a semiconductor laser is provided between the single crystal substrate and the light emitting element with a mirror layer interposed for resonating and amplifying light of the light emitting element with the light reflecting layer. In addition to the above structure, by depositing the reflection film over the entire lower surface of the single crystal substrate including the inclined surface, light from the outside is emitted to the light emitting element between the mirror layer and the light reflection layer through the single crystal substrate. It is possible to effectively prevent the light from entering the semiconductor device, which allows the semiconductor device to stably function as a semiconductor laser.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of an optical module configured using the semiconductor device of FIG.

FIG. 3 is a sectional view of a semiconductor device according to another embodiment of the present invention.

FIG. 4 is a sectional view of a semiconductor device according to another embodiment of the present invention.

FIG. 5 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.

FIG. 6 is a cross-sectional view of a conventional semiconductor device.

7 is a sectional view of an optical module configured using the semiconductor device of FIG.

[Explanation of symbols]

1, 1 '... single crystal substrate, 1a, 1'a ... inclined surface,
2 ... Light emitting element, 3 ... Light reflecting layer, 4, 4 '...
Light receiving element, 5, 5 '... Reflective film, 6 ... Mirror layer,
A ... Semiconductor device, B ... Support substrate, C ... Optical fiber

Claims (8)

[Claims] 1. A semiconductor device in which a light-emitting element and a light-reflecting layer for reflecting the light of the light-emitting element toward the single-crystal substrate are sequentially deposited on the upper surface of a single-crystal substrate having a light-transmitting property. An inclined surface that reflects the light of the light emitting element in a direction substantially parallel to the upper surface of the single crystal substrate is formed on the lower surface of the single crystal substrate located immediately below the light emitting element, and the inclined surface is formed near the inside or on the inclined surface. A semiconductor device comprising a light receiving element for detecting light intensity. 2. The semiconductor device according to claim 1, wherein the light receiving element is a photodiode formed by doping impurities into a single crystal substrate. 3. The semiconductor device according to claim 1, wherein an inclined surface of the single crystal substrate is inclined by about 45 ° with respect to an upper surface of the single crystal substrate. 4. The single crystal substrate has a zinc blende type crystal structure, and the plane orientation of the upper surface is <1 from the (001) plane.
The semiconductor device according to any one of claims 1 to 3, wherein the semiconductor device is inclined in the 10> direction from 9.2 ° to 10.2 °. 5. The reflecting film is deposited on the inclined surface of the single crystal substrate so as to cover the entire light receiving element. Semiconductor device. 6. A mirror layer for resonating and amplifying the light of the light emitting element with the light reflecting layer is interposed between the single crystal substrate and the light emitting element. The semiconductor device according to claim 5. 7. A mirror layer for resonating / amplifying the light of the light emitting element with the light reflecting layer is interposed between the single crystal substrate and the light emitting element, and the reflecting film has the inclination. The semiconductor device according to claim 5, wherein the single crystal substrate including the surface is deposited over the entire lower surface. 8. The method according to any one of claims 1 to 7, which is formed on the upper surface of the support substrate.
The semiconductor device and the optical fiber according to any one of claims 1 to 3, wherein an upper surface of the single crystal substrate and an upper surface of a supporting substrate face each other, and an end surface of the single crystal substrate from which light of the light emitting element is emitted and one end of the optical fiber are close to each other. An optical module characterized by being installed side by side.