JP2003249477A - Single-wafer washing device for semiconductor substrate - Google Patents
Single-wafer washing device for semiconductor substrateInfo
- Publication number
- JP2003249477A JP2003249477A JP2002049994A JP2002049994A JP2003249477A JP 2003249477 A JP2003249477 A JP 2003249477A JP 2002049994 A JP2002049994 A JP 2002049994A JP 2002049994 A JP2002049994 A JP 2002049994A JP 2003249477 A JP2003249477 A JP 2003249477A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- oxide film
- substrate
- wafer
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体基板用枚葉洗
浄装置に係わり、特に酸化膜の状態を検知できる酸化膜
検出センサーを設けた半導体基板用枚葉洗浄装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate single wafer cleaning apparatus, and more particularly to a semiconductor substrate single wafer cleaning apparatus provided with an oxide film detection sensor capable of detecting the state of an oxide film.
【0002】[0002]
【従来の技術】従来、半導体基板の洗浄は、HF処理を
用いるバッチ式の洗浄装置によりおこなわれ、パーティ
クル及び金属不純物量の低減が図られていた。しかし、
近年の半導体基板の大口径化及びより清浄度の高い基板
を得るために、図4に示すような枚葉式洗浄装置11が
活用されている。この従来の枚葉式洗浄装置11では洗
浄液供給ノズル12から供給されるオゾン等の機能水L
0を用いて、回転テーブル13に載置固定された半導体
基板W0のパーティクルを除去し、HFを用いて金属不
純物量を低減する方法が一般的である。特にこの従来の
枚葉式洗浄装置11はHF洗浄で除去できないCu、A
u等の金属以外の不純物を除去するのに効果があると言
われている。Cu等の金属不純物の除去はオゾン水でウ
ェーハ表面を酸化し、酸化膜中にとりこまれたCu等の
金属不純物をその後のHF処理により除去する。一般に
オゾン水によるパーティクルの除去は、有機物等を介
在して付着しているパーティクルをオゾン水により酸化
分解し除去する。オゾン水によりウェーハ表面を酸化
し、ウェーハ表面に付着しているパーティクルをその後
のHF処理により除去すると言われている。2. Description of the Related Art Conventionally, cleaning of a semiconductor substrate has been carried out by a batch-type cleaning device using HF treatment to reduce the amount of particles and metal impurities. But,
In order to increase the diameter of a semiconductor substrate and obtain a substrate with higher cleanliness in recent years, a single wafer cleaning apparatus 11 as shown in FIG. 4 is utilized. In this conventional single-wafer cleaning apparatus 11, functional water L such as ozone supplied from the cleaning liquid supply nozzle 12 is supplied.
It is general to use 0 to remove particles of the semiconductor substrate W 0 placed and fixed on the rotary table 13 and use HF to reduce the amount of metal impurities. In particular, this conventional single-wafer cleaning apparatus 11 cannot remove Cu and A that cannot be removed by HF cleaning.
It is said to be effective in removing impurities other than metals such as u. To remove metal impurities such as Cu, the surface of the wafer is oxidized with ozone water, and metal impurities such as Cu incorporated in the oxide film are removed by the subsequent HF treatment. Generally, in the removal of particles with ozone water, particles adhering through the interposition of organic substances are oxidatively decomposed with ozone water and removed. It is said that the surface of the wafer is oxidized by ozone water and particles adhering to the surface of the wafer are removed by the subsequent HF treatment.
【0003】しかしながら、空気中の酸化等により一般
にシリコン基板表面には自然酸化膜が形成されている。However, a natural oxide film is generally formed on the surface of the silicon substrate due to oxidation in air or the like.
【0004】従来の枚葉式洗浄装置においては、パーテ
ィクルを除去する工程でオゾン水等機能水により基板表
面が酸化され、その後HF処理により金属不純物が除去
される。しかし、オゾン水等によりシリコン基板表面に
形成された酸化膜がHFにより除去される時間はウェー
ハの状態により異なることがある。この酸化膜をHF洗
浄により完全に除去しないとシリコン基板表面のパーテ
ィクル及び金属不純物が残留することがわかっている。
そのためシリコン基板を洗浄する場合、洗浄時間を長く
して洗浄するので、洗浄時間がのびる問題がある。In the conventional single-wafer cleaning apparatus, the surface of the substrate is oxidized by the functional water such as ozone water in the step of removing particles, and then the metal impurities are removed by the HF treatment. However, the time for which the oxide film formed on the surface of the silicon substrate by ozone water or the like is removed by HF may vary depending on the state of the wafer. It is known that particles and metal impurities on the surface of the silicon substrate remain unless the oxide film is completely removed by HF cleaning.
Therefore, when cleaning the silicon substrate, the cleaning time is extended and the cleaning time is extended.
【0005】[0005]
【発明が解決しようとする課題】そこで、洗浄時間によ
らず、表面酸化膜の除去状態を観察して洗浄工程を終了
させることにより、洗浄工程時間を短縮できる半導体基
板用枚葉洗浄装置が要望されている。Therefore, there is a demand for a single-wafer cleaning apparatus for semiconductor substrates, which can shorten the cleaning process time by observing the removal state of the surface oxide film and terminating the cleaning process regardless of the cleaning time. Has been done.
【0006】本発明は上述した事情を考慮してなされた
もので、洗浄時間によらず、表面酸化膜の除去状態を観
察して洗浄工程を終了させることにより、洗浄工程時間
を短縮できる半導体基板用枚葉洗浄装置を提供すること
を目的とする。The present invention has been made in view of the above-mentioned circumstances, and the semiconductor substrate can be shortened by observing the removal state of the surface oxide film and terminating the cleaning process regardless of the cleaning time. An object is to provide a single-wafer cleaning device.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明の1つの態様によれば、ケーシングと、この
ケーシングに設けられ駆動軸により回転駆動され半導体
基板が載置固定される回転テーブルと、前記半導体基板
の表面の洗浄液を供給するように設けられた洗浄液供給
ノズルと、前記半導体基板表面の酸化膜の除去状態を検
知し前記半導体基板の表面に光学的に対向するように設
けられた酸化膜検出センサーとを有することを特徴とす
る半導体基板用枚葉洗浄装置が提供される。これによ
り、洗浄時間によらず、表面酸化膜の除去状態を観察し
て洗浄工程を終了させることにより、洗浄工程時間の短
縮が可能となる。To achieve the above object, according to one aspect of the present invention, a casing and a rotary table on which a semiconductor substrate is mounted and fixed by being rotationally driven by a drive shaft provided in the casing. A cleaning liquid supply nozzle provided to supply a cleaning liquid for the surface of the semiconductor substrate, and a cleaning liquid supply nozzle provided so as to optically face the surface of the semiconductor substrate by detecting the removal state of the oxide film on the surface of the semiconductor substrate. A single-wafer cleaning apparatus for semiconductor substrates is provided, which has an oxide film detection sensor. As a result, the cleaning step time can be shortened by observing the removal state of the surface oxide film and terminating the cleaning step regardless of the cleaning time.
【0008】好適な一例では、上記酸化膜検出センサー
は、液体の存在により吸収されるか乱反射を生じる波長
域の光を発する光発光素子と、半導体基板の表面上から
反射してくる光を受光する受光素子とを有する。これに
より、簡単な構造で容易に基板表面の酸化膜の除去状態
のモニターが可能となる。In a preferred example, the oxide film detection sensor receives a light emitting element which emits light in a wavelength range which is absorbed or diffusely reflected by the presence of a liquid and a light which is reflected from the surface of the semiconductor substrate. And a light receiving element that operates. As a result, it becomes possible to easily monitor the removal state of the oxide film on the substrate surface with a simple structure.
【0009】[0009]
【発明の実施の形態】以下、本発明に係わる半導体基板
用枚葉洗浄装置の実施形態について添付図面を参照して
説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a single-wafer cleaning apparatus for semiconductor substrates according to the present invention will be described below with reference to the accompanying drawings.
【0010】図1は本発明に係わる半導体基板用枚葉洗
浄装置の概念図である。FIG. 1 is a conceptual diagram of a single-wafer cleaning apparatus for semiconductor substrates according to the present invention.
【0011】図1に示すように、本発明に係わる半導体
基板用枚葉洗浄装置1は、ケーシング2と、このケーシ
ング2に設けられ駆動軸3により回転駆動され半導体基
板Wが載置固定される回転テーブル4と、半導体基板例
えばシリコン基板Wの表面に洗浄液Lを供給するように
設けられた洗浄液供給ノズル5と、半導体基板Wの表面
の酸化膜の除去状態を検知する酸化膜検出センサー6と
を有している。As shown in FIG. 1, a single-wafer cleaning apparatus for semiconductor substrates 1 according to the present invention has a casing 2 and a semiconductor device W mounted on the casing 2 and rotationally driven by a drive shaft 3 to mount and fix the semiconductor substrate W thereon. A rotary table 4, a cleaning liquid supply nozzle 5 provided to supply a cleaning liquid L to the surface of a semiconductor substrate, for example, a silicon substrate W, and an oxide film detection sensor 6 for detecting a removal state of an oxide film on the surface of the semiconductor substrate W. have.
【0012】上記ケーシング2は、枚葉洗浄装置1外に
洗浄液Lが飛散するのを防止するためのものであり、こ
のケーシング2内に設けられた回転テーブル4は、この
回転テーブル4に載置され基材固定部材7より固定され
たシリコン基板Wを高速で回転させるものである。The casing 2 serves to prevent the cleaning liquid L from scattering outside the single-wafer cleaning apparatus 1. The rotary table 4 provided in the casing 2 is mounted on the rotary table 4. The silicon substrate W fixed by the base material fixing member 7 is rotated at high speed.
【0013】また、上記洗浄液供給ノズル5は、オゾン
水、HF水及び純水をシリコン基板Wの表面に吹きかけ
て供給し、半導体基板Wの表面を洗浄するためのもので
ある。The cleaning liquid supply nozzle 5 is for cleaning the surface of the semiconductor substrate W by spraying ozone water, HF water and pure water onto the surface of the silicon substrate W to supply the same.
【0014】さらに、上記酸化膜検出センサー6は、シ
リコン基板Wの表面のHF水の存在を検出して、基板表
面の酸化膜の除去状態をモニターするためのものであ
る。この酸化膜検出センサー6は、半導体基板Wの表面
に光学的に対向するように設けられ、例えば、シリコン
基板の表面上に可視光のほか液体の存在により吸収され
るか乱反射を生じる波長域の光を発する光発光素子と、
シリコン基板の表面上から反射してくる光を受光する受
光素子とを有し、枚葉洗浄装置1全体を制御する制御装
置(図示せず)に反射信号を入力し、回転テーブル4の
回転及び洗浄液供給ノズル5を制御するようになってい
る。これにより、簡単な構造で容易に基板表面の酸化膜
の除去状態をモニターできる。Further, the oxide film detection sensor 6 is for detecting the presence of HF water on the surface of the silicon substrate W and monitoring the removal state of the oxide film on the substrate surface. The oxide film detection sensor 6 is provided so as to be optically opposed to the surface of the semiconductor substrate W, and for example, has a wavelength range in which visible light is absorbed on the surface of the silicon substrate in addition to the presence of liquid or diffuse reflection occurs. A light emitting element that emits light,
It has a light receiving element for receiving light reflected from the surface of the silicon substrate, and inputs a reflection signal to a control device (not shown) that controls the whole single wafer cleaning apparatus 1 to rotate the rotary table 4 and The cleaning liquid supply nozzle 5 is controlled. As a result, the removal state of the oxide film on the substrate surface can be easily monitored with a simple structure.
【0015】次に本発明に係わる半導体基板用枚葉洗浄
装置を用いた基板用枚葉洗浄方法について説明する。Next, a substrate single wafer cleaning method using the semiconductor substrate single wafer cleaning apparatus according to the present invention will be described.
【0016】図1に示すように、シリコン基板Wを回転
テーブル4に載置し、基材固定部材7により、シリコン
基板Wを回転テーブル4に固定する。しかる後、回転テ
ーブル4を回転させて、シリコン基板Wを回転させなが
ら、洗浄液供給ノズル5からパーティクル除去のために
例えばオゾン水等の機能水をシリコン基板Wに吹きか
け、このオゾン水の処理により基板表面のパーティクル
を除去する。基板表面は酸化し、一般的に図2に示すよ
うに、基板表面は親水性となる。As shown in FIG. 1, the silicon substrate W is placed on the turntable 4, and the silicon substrate W is fixed to the turntable 4 by the base material fixing member 7. Thereafter, the rotary table 4 is rotated to rotate the silicon substrate W, and functional water such as ozone water is sprayed from the cleaning liquid supply nozzle 5 onto the silicon substrate W to remove particles, and the substrate is processed by this ozone water. Remove particles on the surface. The surface of the substrate is oxidized, and generally the surface of the substrate becomes hydrophilic as shown in FIG.
【0017】その後、基板表面から金属不純物を除去す
るために、洗浄液供給ノズル5から、HF水を酸化した
シリコン基板Wの表面に吹きかけ、HF処理を行い酸化
膜を次第に除去する。酸化膜が除去されたシリコン基板
表面は、疎水性となる。Then, in order to remove metal impurities from the surface of the substrate, HF water is sprayed from the cleaning liquid supply nozzle 5 onto the surface of the oxidized silicon substrate W, and HF treatment is performed to gradually remove the oxide film. The surface of the silicon substrate from which the oxide film has been removed becomes hydrophobic.
【0018】しかしながら、この洗浄工程において、シ
リコン基板Wが回転しているため、ある特定の箇所にH
F処理水が流れるようになり、基板表面には、一般的に
図3に示すように、HF処理水に覆われない部分が存在
するようになる。However, in this cleaning process, since the silicon substrate W is rotating, H is generated at a specific location.
As the F-treated water flows, the substrate surface generally has a portion that is not covered with the HF-treated water as shown in FIG.
【0019】そこで、酸化膜検出センサー6をシリコン
基板Wに対向して設置することにより、酸化膜が除去さ
れ疎水性化し露出している箇所に光を当て、HFにより
酸化膜を除去して疎水性化した基板表面の状態をモニタ
ーすることができる。Therefore, by arranging the oxide film detection sensor 6 so as to face the silicon substrate W, the oxide film is removed to make the film hydrophobic and exposed to light, and the HF is used to remove the oxide film to make it hydrophobic. It is possible to monitor the condition of the surface of the substrate that has been activated.
【0020】このモニター過程において、HF処理の作
用で基板表面が完全に疎水性面化する以前は、基板表面
に洗浄液が存在するため酸化膜検出センサー6に発光素
子6aから発光される光は、洗浄液に吸収あるいは乱反
射され受光素子6bまで到達しない。これに対して、基
板面が完全に疎水性面化された状態では、発光素子6a
から発光される光は、基板表面で反射され受光素子6b
に到達する。In this monitoring process, before the surface of the substrate is completely made hydrophobic by the action of HF treatment, since the cleaning liquid is present on the surface of the substrate, the light emitted from the light emitting element 6a in the oxide film detection sensor 6 is The light is absorbed or irregularly reflected by the cleaning liquid and does not reach the light receiving element 6b. On the other hand, when the substrate surface is completely hydrophobic, the light emitting element 6a is
The light emitted from the substrate is reflected by the surface of the substrate and received by the light receiving element 6b.
To reach.
【0021】このような受光素子6bへの受光状態を制
御装置(図示せず)で判断することにより、基板表面の
酸化膜の状態をモニターすることができる。The state of the oxide film on the surface of the substrate can be monitored by determining the light receiving state of the light receiving element 6b by a control device (not shown).
【0022】この様にHF処理時に基板表面が疎水性化
する状態をセンサーによりモニターすることで洗浄工程
時間を最適化できる。As described above, the cleaning process time can be optimized by monitoring the state in which the substrate surface becomes hydrophobic during the HF treatment with the sensor.
【0023】[0023]
【実施例】試験方法:本発明に係わる半導体基板用枚葉
洗浄装置を使用し、被洗浄物として8インチシリコンウ
ェーハを用いて、オゾン水により予めシリコンウェーハ
表面を酸化させた。ウェーハ表面の酸化膜形成状態を変
化させるためにウェーハは予めイソプロピルアルコール
により有機物汚染させたものと汚染させていないものを
用いた。その後HF処理を行い、酸化膜検出センサーを
使用した場合(実施例)と、使用しない場合(従来例)
で洗浄工程時間及びウェーハ表面に存在するCu金属不
純物量を比較した。なお、ウェーハ数は各条件10枚と
した。洗浄前のウェーハ表面Cu金属不純物量は1×1
012atoms/cm2である。なお、従来例の洗浄
工程時間は15secとした。EXAMPLES Test method: Using the single-wafer cleaning apparatus for semiconductor substrates according to the present invention, an 8-inch silicon wafer was used as an object to be cleaned, and the surface of the silicon wafer was previously oxidized with ozone water. In order to change the state of oxide film formation on the wafer surface, wafers that were previously contaminated with isopropyl alcohol and those that were not contaminated were used. After that, HF treatment is performed and the case where the oxide film detection sensor is used (Example) and the case where it is not used (Conventional example)
The cleaning process time and the amount of Cu metal impurities present on the wafer surface were compared with each other. The number of wafers was 10 under each condition. Wafer surface before cleaning 1x1 Cu metal impurities
It is 0 12 atoms / cm 2 . The cleaning process time in the conventional example was set to 15 seconds.
【0024】結果:表1に示す。Results: Shown in Table 1.
【0025】[0025]
【表1】 [Table 1]
【0026】有機物汚染有りでHF処理時間を15se
cと固定した従来例の場合、各ウェーハ表面のCu金属
不純物量は1×109〜1010と差を生じることがわ
かった。HF treatment time is 15 sec with organic contamination
In the case of the conventional example fixed to c, it was found that the Cu metal impurity amount on the surface of each wafer had a difference of 1 × 10 9 to 10 10 .
【0027】これに対して、実施例では、HF処理時間
を最適化でき、ウェーハ表面のCu金属不純物量は全て
1×109以下と検出限界以下となることがわかった。On the other hand, in the example, it was found that the HF treatment time could be optimized, and the Cu metal impurity amount on the wafer surface was all 1 × 10 9 or less, which was below the detection limit.
【0028】有機物汚染無しの場合、ウェーハ表面のC
u金属不純物量は、従来例と実施例とで差はないことが
わかった。しかしHF処理時間は実施例では従来例の4
0〜60%に短縮できることがわかった。When there is no organic contamination, C on the wafer surface
It was found that there was no difference in the amount of u metal impurities between the conventional example and the example. However, in the embodiment, the HF processing time is 4 times that of the conventional example.
It turned out that it can be shortened to 0-60%.
【0029】[0029]
【発明の効果】本発明に係わる半導体基板用枚葉洗浄装
置によれば、洗浄時間によらず、表面酸化膜の除去状態
を観察して洗浄工程を終了させることにより、洗浄工程
時間を短縮できる半導体基板用枚葉洗浄装置を提供する
ことができる。According to the single-wafer cleaning apparatus for semiconductor substrates of the present invention, the cleaning process time can be shortened by observing the removal state of the surface oxide film and terminating the cleaning process regardless of the cleaning time. A single-wafer cleaning apparatus for semiconductor substrates can be provided.
【図1】本発明に係わる半導体基板用枚葉洗浄装置の概
念図。FIG. 1 is a conceptual diagram of a single-wafer cleaning apparatus for semiconductor substrates according to the present invention.
【図2】一般的な洗浄工程時の半導体基板の表面状態の
概念図。FIG. 2 is a conceptual diagram of a surface state of a semiconductor substrate during a general cleaning process.
【図3】一般的な洗浄工程時の半導体基板の表面状態の
概念図。FIG. 3 is a conceptual diagram of a surface state of a semiconductor substrate during a general cleaning process.
【図4】従来の半導体基板用枚葉洗浄装置の概念図。FIG. 4 is a conceptual diagram of a conventional single-wafer cleaning apparatus for semiconductor substrates.
1 半導体基板用枚葉洗浄装置 2 ケーシング 3 駆動軸 4 回転テーブル 5 洗浄液供給ノズル 6 酸化膜検出センサー 7 基材固定部材 L 洗浄液 W シリコン基板 1 Single-wafer cleaning equipment for semiconductor substrates 2 casing 3 drive axis 4 turntable 5 Cleaning liquid supply nozzle 6 Oxide film detection sensor 7 Base material fixing member L cleaning liquid W Silicon substrate
Claims (2)
れ駆動軸により回転駆動され半導体基板が載置固定され
る回転テーブルと、前記半導体基板の表面の洗浄液を供
給するように設けられた洗浄液供給ノズルと、前記半導
体基板表面の酸化膜の除去状態を検知し前記半導体基板
の表面に光学的に対向するように設けられた酸化膜検出
センサーとを有することを特徴とする半導体基板用枚葉
洗浄装置。1. A casing, a rotary table which is provided on the casing and is rotationally driven by a drive shaft to mount and fix a semiconductor substrate, and a cleaning liquid supply nozzle which is provided to supply a cleaning liquid for the surface of the semiconductor substrate. A single-wafer cleaning apparatus for a semiconductor substrate, comprising: an oxide film detection sensor that is provided so as to detect a removal state of an oxide film on the surface of the semiconductor substrate and optically oppose the surface of the semiconductor substrate.
により吸収されるか乱反射を生じる波長域の光を発する
光発光素子と、半導体基板の表面上から反射してくる光
を受光する受光素子とを有することを特徴とする請求項
1に記載の半導体基板用枚葉洗浄装置。2. The oxide film detection sensor includes a light emitting element that emits light in a wavelength range that is absorbed or diffusely reflected due to the presence of a liquid, and a light receiving element that receives light reflected from the surface of a semiconductor substrate. The single-wafer cleaning apparatus for semiconductor substrates according to claim 1, further comprising:
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Cited By (2)
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JP2014096459A (en) * | 2012-11-08 | 2014-05-22 | Mitsubishi Electric Corp | Surface processing method of semiconductor substrate for solar cell, process of manufacturing semiconductor substrate for solar cell, process of manufacturing solar cell, and manufacturing apparatus of solar cell |
WO2015029524A1 (en) * | 2013-08-28 | 2015-03-05 | Sumco Techxiv株式会社 | Method and device for polishing semiconductor wafer |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014096459A (en) * | 2012-11-08 | 2014-05-22 | Mitsubishi Electric Corp | Surface processing method of semiconductor substrate for solar cell, process of manufacturing semiconductor substrate for solar cell, process of manufacturing solar cell, and manufacturing apparatus of solar cell |
WO2015029524A1 (en) * | 2013-08-28 | 2015-03-05 | Sumco Techxiv株式会社 | Method and device for polishing semiconductor wafer |
US10553420B2 (en) | 2013-08-28 | 2020-02-04 | Sumco Techxiv Corporation | Method and device for polishing semiconductor wafer |
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