JP2003249452A - Board-treating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To generate a plasma that has superb uniformity in a plasma distribution and is clean even on a board having a large area. <P>SOLUTION: A plasma source provided at a position opposite to a board W is divided into a plurality of plasma source units 11 that can be independently controlled. Gas supply ports 41 and 42 and a gas exhaust vent 43 are provided for each plasma source unit 11. An electrode 13 for discharge is provided over the respective plasma source units 11, and high-frequency power to be added to the electrode 13 via a variable inductance 23 can be adjusted. Permanent magnets 31 are provided over the respective electrodes 13 for discharge, arrangement is made by polarity where lines of magnetic force of respective permanent magnets are connected, and magnetron discharge can be controlled by changing the interval and magnetic field strength of the permanent magnet 31. A grid 14 is provided under the plasma source unit 11, and an electronic temperature can be controlled at a grid interval. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing a substrate using plasma, and more particularly to a substrate processing apparatus suitable for processing a large area substrate.

[0002]

2. Description of the Related Art In a substrate processing apparatus, a plasma process in which plasma is generated and a substrate is processed by using a gas activated by the plasma is important. The current state of this plasma process, the controllability of the electron temperature, and the necessity of enlarging the substrate are described.

(1) Current state of plasma process equipment The plasma process is now becoming more important as a basic technology indispensable to the industrial world due to the realization of processing technologies that make use of the unique characteristics of plasma, such as etching and thin film deposition. .

Up to now, high density and large area have been positively made, and plasma density of 10 ¹¹ can be achieved for 12 inch substrates.
There are several candidates for plasma sources up to / cm ³ , and process tests and characterization experiments have been conducted.

The parallel plate capacitively coupled plasma source currently used as a main plasma source has low plasma generation efficiency, and it is difficult to generate clean plasma due to sputtering from the electrodes.

Other plasma sources include ECR plasma sources, inductively coupled plasma sources, micro surface waves, and high density plasma sources such as helicon waves. However, it has not been possible to control the plasma density distribution with good uniformity or to enable generation of clean plasma.

On the other hand, a modified magnetron type plasma source (Japanese Patent Laid-Open No. 7-201831) using a ring-shaped permanent magnet for a cylindrical high frequency electrode has also been proposed.
The plasma source described in this publication efficiently generates a magnetron discharge by a high frequency electric field formed by a cylindrical discharge electrode and a magnetic field formed by a ring-shaped permanent magnet to generate plasma. It is like this.

However, when the diameter of the cylindrical discharge electrode becomes larger than 1 m, the plasma distribution uniformity becomes a problem due to the asymmetry of the high frequency power supply position.

A problem common to these high-density plasma source and modified magnetron type plasma source is that the plasma generation for process control is optimized by the discharge frequency, pulsing, or external parameters such as gas species, pressure and discharge power. This is a point that is being attempted, and as long as this is pushed forward, the degree of freedom in plasma control is poor, and there is a technical limit.

(2) Necessity of electron temperature control In future high precision processes, it is necessary to escape from such a passive plasma generation method and control the plasma itself to more positively control the energy distribution of electrons and ions inside. It is necessary to develop a technique for selectively generating the necessary radicals or irradiating the ions by changing them. As a result, the surface reaction can be efficiently induced, the complicated material process can be optimized, and the processing accuracy can be further improved.
In particular, the electron temperature is an important parameter that defines the inelastic reaction process, and the development of electron energy control technology in plasma is an urgent issue that cannot be avoided in order to realize fine reaction control at the atomic level. ing.

(3) Necessity of large area uniform process On the other hand, there are some problems in realizing such an electron temperature control method on a 1 m class substrate. Since the plasma distribution on a large-area substrate varies greatly depending on the gas pressure, gas species, discharge output, etc., in order to achieve optimum uniformity in individual discharge parameters on a large-area substrate, The development of a plasma source capable of finely controlling the plasma generation distribution has become an essential issue.

[0012]

The conventional plasma source used in the substrate processing apparatus as described above has the following problems.

(1) In the parallel plate capacitively coupled plasma source, the plasma generation efficiency is low and sputtering from the electrodes occurs. In other high density plasma sources such as ECR plasma sources, since one plasma source is used, the uniformity of the high density plasma source is poor and the controllability of the plasma density distribution is poor. Further, in the modified magnetron type plasma source using the ring-shaped high frequency electrode, although plasma can be efficiently generated, there is a problem in the uniformity of plasma distribution. In addition, since the reaction product gas is exhausted from the back of the substrate, the efficiency of exhaust gas treatment is poor, and clean plasma cannot be generated.

(2) Further, the conventional plasma sources are common in that they are passive plasma generation methods and do not employ an active plasma generation method, so that the plasma generation distribution on the substrate cannot be finely controlled. .

(3) Since the plasma generation distribution on the substrate cannot be finely controlled, the optimum plasma distribution on the large area substrate cannot be achieved.

An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a substrate processing apparatus capable of producing clean plasma with good uniformity of plasma distribution even in a large area substrate. Especially. Another object of the present invention is to provide a substrate processing apparatus capable of finely controlling the plasma generation distribution and achieving the optimum plasma distribution on the substrate.

[0017]

According to a first aspect of the present invention, there is provided a processing chamber for supplying a gas to process a substrate, and a plurality of plasma sources provided in a position facing the substrate in the processing chamber to generate plasma in the processing chamber. The substrate processing apparatus includes a unit and a plurality of exhaust ports that exhaust the inside of the processing chamber. According to this, since the plasma source that generates plasma is composed of the plurality of plasma source units, the plasma generation distribution on the substrate can be controlled in unit. Therefore, the uniformity of plasma distribution is good. Further, since the plurality of exhaust ports for exhausting the inside of the processing chamber are provided, the staying period of the gas can be reduced, and the reacted gas can be immediately exhausted. Therefore, clean plasma can be maintained.

In a second aspect based on the first aspect, each plasma source unit is connected to one high frequency power source, and the discharge output of each plasma source unit is a variable inductance or variable capacitance provided in each plasma source unit. The substrate processing apparatus is configured so as to be independently controlled by a variable impedance including the above. According to this, since each plasma source unit is connected to one high frequency power source, the configuration is simple. Further, since the discharge output of each plasma source unit can be independently adjusted using the variable impedance, the plasma generation distribution can be finely controlled. Therefore, an optimum plasma density distribution can be obtained for uniforming the in-plane process of the substrate.

A third invention is the substrate processing according to the first invention, wherein each of the plasma source units is provided with a grid for controlling an electron temperature, and the gap between the grids is adjustable. It is a device. According to this, the electrons in the plasma are repelled by the grid, and the amount of repulsion is adjusted by the gaps in the grid, so that the electron temperature of the plasma can be controlled. Since the gas is activated by the control plasma whose electron temperature is controlled, radical generation can be controlled. Therefore, the radical distribution on the substrate can be made uniform, and the in-plane process of the substrate can be made uniform.

Further, in the above invention, it is preferable that the plasma source unit is composed of a modified magnetron type high frequency plasma source in which a permanent magnet is added to a discharge electrode, because a magnetron discharge can be efficiently generated to generate plasma.

It is preferable that the carrier gas is supplied to the inside of the grid of each plasma source unit and the process gas is supplied to the outside of the grid. When the carrier gas is supplied to the plasma source inside the grid, the plasma generation efficiency can be increased. Further, when the process gas is supplied to the outside of the grid, the process gas can be activated by the control plasma whose electron temperature is controlled, so that the distribution of generated radicals can be made uniform within the substrate surface.

Further, it is preferable that the gas is dispersed and exhausted between the plasma source units. As a result, the residence time of the gas can be further reduced, and the reacted gas can be immediately exhausted, so that clean plasma can be maintained.

Further, it is preferable that the gas from each exhaust port is collected by a tube and guided to an exhaust duct. In this way, the dispersed exhaust ports can be connected to a common exhaust duct.

Further, it is preferable that the intervals between the plurality of permanent magnets provided in each modified magnetron type plasma source unit are variable. By varying the distance between the permanent magnets, the distribution of high-energy electrons trapped in the lines of magnetic force can be changed, and plasma with higher generation efficiency can be obtained.

Further, as a method invention corresponding to the above apparatus invention, the substrate processing apparatus is used to generate a plurality of plasmas at positions facing a substrate in a processing chamber, and supply a gas to each plasma, Substrate processing method for processing a substrate by exhausting from a plurality of exhaust ports corresponding to the plasma, or a method for manufacturing a semiconductor device.

In the above method invention, it is preferable that the generation of each plasma can be controlled independently and the electron temperature of each plasma can be controlled independently. As a result, even if the substrate is large, it is possible to perform uniform substrate processing in the in-plane process of the substrate and obtain a high quality device.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION The substrate processing apparatus of the present invention will be described below.
An embodiment applied to a modified magnetron type plasma device will be described. 1 is a schematic front sectional view of the device, FIG. 2 is a plan view of the device, FIG. 3 is an exploded perspective view of the device, and FIG. 4 is a perspective view of the grid.

In FIG. 1, the processing chamber 5 supplies gas to process the substrate W placed on the bottom portion 2a which serves as the lower electrode of the processing chamber 5. The substrate W is a glass substrate for LCD, for example, and is a large rectangular substrate having a size of, for example, 1 m. The processing chamber 5 is formed in the processing container 1. The processing container 1 is made of metal, for example, aluminum alloy or stainless steel,
It has a rectangular cross section. The processing container 1 is composed of a main body 2 having an open top and a lid 3 closing the opening.

The lid 3 is provided with a plasma source 10 for evacuating the inside of the processing chamber 5 to generate plasma. The plasma source 10, which should be called a multi-plasma source, is provided at a position facing the substrate W in the processing chamber 5, and is composed of a plurality of plasma source units 11 capable of individually generating and controlling plasma.

The plasma source unit 11 is provided in a plurality of openings 34 provided in the metallic lid 3. The circumference of each opening 34 is surrounded by a standing peripheral wall 33. The upper opening of the peripheral wall 33 is covered with the discharge electrode 13 via the insulator 12, and the opening 34 serving as the lower opening of the peripheral wall 33 is covered with the grid 14.

A plasma generating region 6 is formed inside the plasma source unit 11, that is, inside the peripheral wall 33 protruding outward from the ceiling wall 3a of the lid 3, the discharge electrode 13, and the grid 14. A process area 7 for processing the substrate W is formed in the processing chamber 5 with respect to the plasma generation area 6. Therefore, a small plasma region 6 is formed on the upper surface of one large process region 7 facing the substrate W.
It means that a plurality of are formed.

At the center of the discharge electrode 13 provided above each plasma source unit 11, one high frequency power source 21 is provided.
Common high frequency power is applied from the above through the matching box 22 and the high frequency electric field is grounded to the ceiling wall 3 of the lid 3.
It is formed between a and the protruding peripheral wall 33 and the discharge electrode 13, that is, in the plasma source unit 11. A variable inductance 23 is provided in each plasma source unit 11, and high frequency power is applied via each variable inductance 23. By adjusting each variable inductance 23, it is possible to control the high frequency power applied to the discharge electrode 13 and independently control the strength of the high frequency electric field formed in each plasma generation region 6. . In this way, by independently controlling the strength of the high frequency electric field, the discharge output of each plasma source unit 11 is controlled,
An optimum plasma density distribution can be obtained for uniformizing the in-plane processing of the substrate.

A plurality of permanent magnets 31 that form a magnetic field are provided on the discharge electrode 13 of each plasma source unit 11. By adding the permanent magnet 31, the plasma source unit 11 is used as a modified magnetron type plasma source. At least two permanent magnets 31 provided on the discharge electrode 13 of each plasma source unit 11 are arranged above the discharge electrode 13 (four in the illustrated example), and a magnetic pole surface facing the discharge electrode 13 is provided. Are configured so that their polarities are opposite to each other. As a result, a magnetic field H1 is formed so as to surround the peripheral portion of each discharge electrode 13.

In order to control the density of the plasma generated in the plasma generation region 6 also by the magnetic field, it is preferable to make the interval between the permanent magnets 31 and the magnetic field strength variable. For this purpose, a plurality of types of plasma source units 11 in which permanent magnets 31 having different magnet spacings and magnetic field strengths are arranged are prepared in advance, and one suitable for substrate processing can be selected from them.

Two permanent magnets 32 are provided in a ring shape so as to surround the container peripheral wall 2b at upper and lower sides of the outer periphery of the grounded peripheral wall 2b of the processing container 1, which also has a magnetic pole surface facing the peripheral wall 2b. Are configured so that their polarities are opposite to each other.

Therefore, the permanent magnets 31 and 32 arranged on the lid 3 and the peripheral wall 2b form the following three types of magnetic field lines connected to each other in the processing chamber 5. One is the permanent magnet 31 provided on the discharge electrode 13 as described above. As shown by H1, it is formed in the plasma generation region 6 and traps electrons to generate plasma in the plasma generation region 6. Lock it in. Two are outermost discharge electrodes 1
3 by the permanent magnet 31 arranged at the end of the processing container 1 and the permanent magnet 32 arranged at the upper part of the peripheral wall 2b of the processing container 1,
As indicated by H2, a curved line is formed over the plasma generation region 6 and the process region 7 to trap the electrons emitted from the grid 14, and the plasma is directly applied to the substrate W.
Avoid contact with the surrounding area. Three are formed by the two permanent magnets 32 arranged above and below the peripheral wall 2a of the processing container 1. The permanent magnets 32 are formed in the vicinity of the inside of the peripheral wall 2b as indicated by H3 to trap the electrons emitted from the grid 14. The plasma is prevented from coming into direct contact with the outer peripheral portion of the substrate W. In this way, the magnetic lines of force H2 to H3 are formed around the substrate W like barriers so that the plasma does not come into direct contact with the substrate, and damage from the plasma is prevented.

The grid 14 provided at the bottom of the plasma source unit 11 has a floating potential in order to control the electron temperature. Further, the gap between the grids 14 is configured to be adjustable. The gap is adjusted by preparing a plurality of types of plasma source units 11 to which grids 14 having different mesh sizes are attached in advance and selecting the optimum one from the plasma source units 11. The floating potential grid 14 controls the plasma that diffuses through the grid 14 to the process area 7. Since the process gas supplied to the process region 7 is activated by plasma to generate radicals, the controlled plasma controls generation of radicals.

As a plasma source, a carrier gas (hydrogen, argon, etc.) is supplied to the plasma generation region 6 inside the grid 14 through the carrier gas inlet 41 provided in each discharge electrode 13. Further, the process gas (silane, methane, etc.) is supplied to the low temperature plasma portion of the process region 7 outside the grid 14 from the process gas inlet 42 provided in the ceiling wall 3a of the lid 3 adjacent to the plasma source unit 11. .

Further, the ceiling wall 3a of the lid 3 is provided with a plurality of exhaust ports 43 for exhausting the inside of the processing chamber 5, and the exhaust ports 43 are connected to a pump (not shown) so that the substrate does not come from behind the substrate. The air is exhausted from the lid body 3 on the opposite side.

FIG. 2 is a plan view of the rectangular lid 3 that closes the main body of the processing container. Here, an example of arrangement in which 3 × 4 rectangular plasma source units 11 are arranged on the lid 3 is shown. Although not shown, a plurality of permanent magnets are provided above the plasma source unit 11 as described above. One carrier gas inlet 41 is provided in the center of each plasma source unit 11. Further, two process gas inlets 42 are provided outside the two opposite sides of each plasma source unit 11. Further, four exhaust ports 43 are provided outside the four corners of each plasma source unit 11 so as to surround the plasma source unit 11. Each exhaust port 4
The gas from 3 is collected by a flexible tube (not shown) and guided to an exhaust duct (not shown). When the tube is a flexible tube, each exhaust port 43 can be easily connected to the exhaust duct. 12 in the illustrated example
For each plasma source unit 11, 20 exhaust ports 43 communicating with the pump and 12 carrier gas introducing ports 41 are provided.
16 process gas inlets 42 are provided.

FIG. 3 (a) is an exploded perspective view of the upper part of the apparatus, but since only one plasma source unit 11 is exaggeratedly drawn on the lid body 3, it is different from FIG. 1 and FIG. Not supported. The lid 3 is provided with a discharge electrode 13. A permanent magnet 3 is formed on the discharge electrode 13 with an insulating layer 51 interposed therebetween.
1 is provided, and the ground cover 50 is provided thereon. The outermost permanent magnet 31 a on the discharge electrode 13 has a rectangular shape, and the rod-shaped magnet 31 is included in the rectangular magnet 31.
By providing a plurality of b, the arrangement of the permanent magnets 31 as shown in FIG. 1 is realized.

FIG. 3B is a bottom exploded perspective view of the apparatus. As shown, the container side wall 2b provided with the permanent magnet 32 and the container bottom wall 2a on which the substrate W is placed are both grounded. The two permanent magnets 32 provided along the top and bottom of the outer circumference of the container side wall 2b are, as shown in the enlarged sectional view of the circle mark portion,
The magnetic pole surfaces facing the container side wall 2b are arranged so as to have different polarities, and a magnetic field H3 is formed from the magnetic pole N toward the magnetic pole S through the container side wall 2b.

As shown in FIG. 4, the grid 14 provided at the bottom of the plasma source unit has a frame 14a and a net 14
It is constructed by stretching b to control the negatively charged electrons. The grid 14 is floated to a floating potential without being grounded.
Since electrons diffusing from the plasma generation region 6 toward the grid 14 to the process region 7 are suppressed, the grid 1
4 is negatively charged, the sheath potential is further increased, and the diffusion of electrons is suppressed. By selecting the plasma source unit 11 and changing the gap of the grid 14, the electron temperature is controlled and the radical generation in the process region 7 is controlled. Note that the grid 14 may be controlled in real time by changing the grid potential, instead of the floating potential.

Next, the operation of the modified magnetron type plasma device having the above multi-plasma source will be described with reference to FIG.

Step 100: Substrate processing (film formation) The substrate W is transferred from another chamber to the processing chamber 5 of the apparatus and set on the processing chamber bottom 2a. The processing chamber 5 is evacuated from the plurality of exhaust ports 43 by a pump. After evacuation, the carrier gas is introduced from the carrier gas introduction port 41 of each plasma source unit 11 and the process gas is introduced from the process gas introduction port 42, and is exhausted from the exhaust port 43. A high frequency power source 2 is provided on the discharge electrode 13 of each plasma source unit 11.
High frequency power is applied from 1 to turn on the plasma. Then, the high frequency electric field generated by the discharge electrode 13 and the discharge electrode 1
Magnetron discharge is generated in each plasma source unit 11 by the magnetic field generated by the permanent magnets 31 arranged above the plasma generator units 3, and the carrier gas is ionized to generate each plasma generation region 6
High-frequency plasma is generated in the. Since the plasma is charged particles, the periphery of the discharge electrode 13 and the discharge electrode 13
It is confined by the permanent magnets 31 arranged on the upper part of the, and diffusion is hindered. As a result, the plasma generation region 6
A uniform and high-density plasma can be obtained inside.

The plasma generated in each plasma generation region 6 diffuses through each floating potential grid 14 to the common process region 7 located below, and the electron temperature is lowered below the grid 14. The process gas supply port 42 is provided in the low temperature plasma portion of the process region 7 outside the grid 14.
Is supplied with a process gas, and the process gas is activated by plasma whose electron temperature is controlled. The electron temperature determines the degree of dissociation (decomposition) of the process gas (molecular gas). A low level results in low decomposition, and a high level results in high decomposition, resulting in a complicated radical species distribution. The control plasma diffused from each grid 14 is confined by the magnetic field H2 at the corner and the magnetic field H3 near the side wall formed in the process region 7,
It does not reach on the substrate W. With an activated process gas with a complex radical species distribution,
A film forming process is performed on the substrate W. At this time, low pressure gas pressure,
Film can be formed at low temperature.

For example, the film forming conditions for the film type a-Si: H are as follows. Process gas type SiH ₄ (10 sccm) Carrier gas type H ₂ (100 sccm) Temperature 300 ° C. Pressure 0.133 Pa (100 mTorr)

When the film formation is completed, the application of high frequency power to the discharge electrode 13 is stopped and the plasma is turned off. Then, after exhausting the processing chamber 5, the processed substrate W is sent to another chamber.

Step 200: Process evaluation The processed substrate thus taken out to another chamber is subjected to process evaluation by a known method.

Step 300: Non-uniformity determination process It is determined whether non-uniformity of film formation is found in the substrate surface by the process evaluation. If no inhomogeneity is found, the device initialization is not a problem and step 10
The substrate is subjected to film formation processing by repeating steps 0 to 300. If non-uniformity is found, proceed to step 400 to change the device defaults.

Step 400: In order to eliminate the in-plane non-uniformity of the substrate for the adjustment film formation, the value of the variable inductance 23 of each plasma source unit 11 corresponding to the non-uniform distribution is changed and added to the discharge electrode 13. The power balance is adjusted or each plasma source unit 11 is replaced to adjust the spacing of the permanent magnets 31, the magnetron discharge by changing the magnetic force, or the electron temperature by changing the gap of the grid 14. In particular, by changing the gap of the grid 14, the electron temperature outside the grid 14 can be controlled in the range of normal temperature (several eV) to low temperature (1 eV or less).

After the adjustment, the above steps 100 to 400 are repeated until the non-uniformity of the substrate surface is eliminated.

As described above, according to this embodiment,
Since the plasma source is divided into multiple plasma source units and each plasma source unit can be controlled individually,
Compared with the case of generating plasma with one plasma source,
The controllability of the plasma density distribution on the substrate can be improved.

Further, since the high frequency electric power for discharge is distributed and supplied even though it is a multi-plasma source, only one high frequency electric power source and a matching box need be provided, and the power source configuration is simple.

The discharge output of each plasma source unit can be easily adjusted by controlling the variable inductance to adjust the high frequency power. In addition, the permanent magnets provided on each discharge electrode are arranged with a polarity such that the magnetic lines of force of the respective permanent magnets are connected to each other, and the spacing between the permanent magnets and the magnetic field strength are made variable so that high-energy electrons can be applied to the adjusted magnetic lines of force. The generation of plasma can be controlled by causing the trapped high-energy electrons to reciprocate along the magnetic field lines with the adjusted high-frequency power. Furthermore, since the active plasma generation method by electron temperature control by the grid of each plasma source unit is adopted, in addition to the control of the plasma generation distribution by the above discharge output and plasma generation control, the plasma generation distribution on the substrate Can be finely controlled. In the embodiment, all of the discharge output, plasma generation control, and electron temperature control are controllable, but even if they are controlled in any combination,
Alternatively, it may be independently controlled.

Further, since the high-frequency power is distributed and supplied to the central position of the discharge electrode of each plasma source unit, even if the processing container becomes large, the high-frequency power is supplied like a single plasma source. The position asymmetry does not occur, and the plasma distribution uniformity problem caused thereby does not occur.
Therefore, the optimum plasma distribution can be achieved even on a large-area substrate, and the uniformity of plasma distribution can be ensured even for a large-sized substrate having a diameter exceeding 1 m.

Since a gas supply port is provided for each plasma source unit and a plurality of exhaust ports are provided around each plasma source unit, gas can be supplied and exhausted for each plasma source unit. Compared with the case where the gas supply system is unified or an exhaust port is provided behind the substrate, the gas stay period can be shortened and exhaust gas such as reacted gas can be immediately exhausted. Therefore, it is possible to realize the uniform distribution of the generated radicals in the substrate surface. Also, efficient gas exhaust can be performed, and clean plasma generation can be realized.

In the embodiment, the grid is used as the means for controlling the electron temperature, but the grid is not limited as long as it can control the plasma. For example,
Similarly, it may be configured by a meandering channel or the like that repels electrons to control the flow of electrons. Further, the peripheral wall is provided outside the lid so that the plasma generation region is convex outward with respect to the process region, but the peripheral wall is provided inside the lid,
The plasma generation region may be convex inward with respect to the process region. In addition to the film formation, the substrate processing includes
Etching and the like are also included.

[0059]

According to the present invention, even on a large-area substrate, the plasma distribution is good and a clean plasma can be generated. Further, the plasma generation distribution can be finely controlled, and the optimum plasma distribution on the substrate can be achieved.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a modified magnetron type plasma device according to an embodiment.

FIG. 2 is an arrangement example of plasma source units in a lid of a processing container according to an embodiment.

3A and 3B are exploded perspective views of a modified magnetron-type plasma device according to an embodiment, FIG. 3A is an upper part of the device, and FIG.
Indicate the lower part of the device, respectively.

FIG. 4 is a perspective view of a grid according to an embodiment.

FIG. 5 is a flowchart illustrating the operation of the device according to the embodiment.

[Explanation of symbols]

5 processing room 11 Plasma source unit 14 grid 21 high frequency power supply 23 Variable inductance 41, 42 gas inlet 43 Exhaust port W board

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Osamu Kasahara             3-14-20 Higashi-Nakano, Nakano-ku, Tokyo Stocks             Hitachi Kokusai Electric Co., Ltd. (72) Inventor Ogawa Unryu             3-14-20 Higashi-Nakano, Nakano-ku, Tokyo Stocks             Hitachi Kokusai Electric Co., Ltd. (72) Inventor Noriyoshi Sato             3-14 Akiradori, Izumi-ku, Sendai City, Miyagi Prefecture (72) Inventor Satoshi Iizuka             05 Aoba, Aramaki, Aoba-ku, Sendai City, Miyagi Prefecture F-term (reference) 4G075 AA30 AA63 BC02 BD14 CA15                       CA42 CA47 CA65 EC21                 4K030 AA06 AA17 BA31 FA03 KA15                       KA19 KA30 KA34                 5F045 AA08 AB04 AC01 AD07 DP03                       EF08 EH14 EH16

Claims (3)

[Claims] 1. A processing chamber for supplying a gas to process a substrate, a plurality of plasma source units provided in a position facing the substrate in the processing chamber for generating plasma in the processing chamber, and a plurality of exhaust chambers for exhausting the processing chamber. A substrate processing apparatus having an exhaust port. 2. Each plasma source unit is connected to one high-frequency power source, and the discharge output of each plasma source unit is configured to be independently controlled by a variable impedance provided in each plasma source unit. Claim 1
The substrate processing apparatus according to. 3. The substrate processing apparatus according to claim 1, wherein each of the plasma source units is provided with a grid for controlling an electron temperature, and a gap between the grids is adjustable.