JP2003244558A - Image pickup device and manufacturing method therefor - Google Patents

Image pickup device and manufacturing method therefor

Info

Publication number
JP2003244558A
JP2003244558A JP2002038148A JP2002038148A JP2003244558A JP 2003244558 A JP2003244558 A JP 2003244558A JP 2002038148 A JP2002038148 A JP 2002038148A JP 2002038148 A JP2002038148 A JP 2002038148A JP 2003244558 A JP2003244558 A JP 2003244558A
Authority
JP
Japan
Prior art keywords
image pickup
solid
state
state image
mounting recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002038148A
Other languages
Japanese (ja)
Inventor
Koichi Harada
耕一 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002038148A priority Critical patent/JP2003244558A/en
Publication of JP2003244558A publication Critical patent/JP2003244558A/en
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To suitably curve a solid-state image pickup element into a desired curvature and arrange it inside a camera, etc. <P>SOLUTION: The solid-state image pickup element 30 is formed into a shape of a thin film chip, having a film thickness of 20 μm or smaller, and is bonded and fixed on a mounting recessed portion 42 of a wiring substrate 40, in a state of a bare chip with no package or the like. The portion 42 is formed into, e.g. an arc surface or a spherical surface which is curved in a prescribed curvature. The element 30 is bonded and fixed in a state curved in a prescribed curvature by this portion 42 and is connected to a pad portion of the substrate 40. With this configuration, the curved device 30 can be positioned and arranged at a prescribed position in a camera module, thereby preventing sensitivity shading in the case of shortening an emission focus distance of a lens 20. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、薄膜チップ状に形
成されたCCD型イメージセンサやCMOS型イメージ
センサ等の固体撮像素子を用いる撮像装置およびその製
造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image pickup apparatus using a solid-state image pickup element such as a CCD type image sensor or a CMOS type image sensor formed in a thin film chip, and a manufacturing method thereof.

【0002】[0002]

【従来の技術】従来より、この種の固体撮像素子を用い
た各種のスチルカメラやビデオカメラが提供されてい
る。このような固体撮像素子を用いたカメラでは、固体
撮像素子の特徴を生かして小型化が図られているが、よ
り一層の小型化を図るためには、固体撮像素子だけでは
なく、周辺の光学系の小型化を図る必要があり、特にレ
ンズの射出瞳距離も短くすることが必要となる。しか
し、レンズの射出瞳距離を短くすると、固体撮像素子の
チップ周辺部では入射光がフォトセンサに斜めに入るこ
とになり、感度シェーディングが発生するという問題が
あった。そこで、このような不具合を改善するために、
少なくとも左右の端部を光入射側へ所定の曲率で湾曲さ
せて配置するような方法が提案されている(例えば、特
開平6−133229号公報参照)。
2. Description of the Related Art Conventionally, various still cameras and video cameras using this type of solid-state image pickup device have been provided. A camera using such a solid-state image sensor is miniaturized by taking advantage of the characteristics of the solid-state image sensor, but in order to achieve further miniaturization, not only the solid-state image sensor but also the surrounding optical It is necessary to reduce the size of the system, and in particular, it is necessary to shorten the exit pupil distance of the lens. However, when the exit pupil distance of the lens is shortened, incident light enters the photosensor obliquely in the peripheral portion of the chip of the solid-state image sensor, which causes a problem of sensitivity shading. Therefore, in order to improve such a defect,
A method has been proposed in which at least the left and right ends are arranged so as to be curved toward the light incident side with a predetermined curvature (see, for example, Japanese Patent Laid-Open No. 6-133229).

【0003】[0003]

【発明が解決しようとする課題】しかしながら、実際の
撮像装置を作製する上において、固体撮像素子を湾曲さ
せて配置することは容易でない。例えば、通常のSiウ
ェーハは曲げることができず、撮像素子のチップを曲げ
るためにはチップの板厚を薄くする必要がある。しか
し、従来の裏面研削等の技術を用いてチップの薄膜化を
行うと、コストが大きくなるという問題がある。また、
チップがある程度薄くなると、Siウェーハが割れ易く
なるという問題がある。
However, in manufacturing an actual image pickup apparatus, it is not easy to arrange the solid-state image pickup element in a curved shape. For example, a normal Si wafer cannot be bent, and it is necessary to reduce the thickness of the chip in order to bend the chip of the image pickup device. However, if the chip is thinned by using a conventional technique such as backside grinding, there is a problem that the cost increases. Also,
When the chip becomes thin to some extent, there is a problem that the Si wafer is easily broken.

【0004】これに対して本件出願人は、シリコン基板
上に多孔質シリコン層を設け、その上層に成長させたエ
ピタキシャル層に固体撮像素子を形成した後、多孔質シ
リコン層でシリコン基板を分離することにより、薄膜状
の固体撮像素子を得るような製造方法を提案している
(特開2001−257337号公報参照)。このよう
な方法によれば、例えば20μm以下の膜厚を有する薄
膜チップ状の固体撮像素子を安定的に製造することが可
能である。
On the other hand, the applicant of the present application provides a porous silicon layer on a silicon substrate, forms a solid-state image sensor on an epitaxial layer grown on the porous silicon layer, and then separates the silicon substrate by the porous silicon layer. Therefore, a manufacturing method for obtaining a thin film solid-state imaging device is proposed (see Japanese Patent Laid-Open No. 2001-257337). According to such a method, it is possible to stably manufacture a thin film chip-shaped solid-state imaging device having a film thickness of, for example, 20 μm or less.

【0005】そこで本発明の目的は、以上のような背景
に鑑み、何らかの方法で薄膜化された固体撮像素子を所
望の曲率に適正に湾曲させて各種装置内に配置でき、各
種装置の小型化や品質の向上、ならびに歩留改善等に寄
与できる撮像装置およびその製造方法を提供することに
ある。
In view of the background described above, an object of the present invention is to allow a solid-state image pickup device thinned by some method to be appropriately curved to a desired curvature and to be arranged in various devices, thereby reducing the size of each device. An object of the present invention is to provide an imaging device and a method for manufacturing the same that can contribute to improvement in quality, quality, yield, and the like.

【0006】[0006]

【課題を解決するための手段】本発明は前記目的を達成
するため、薄膜チップ状に形成された固体撮像素子と、
前記固体撮像素子を装着する支持部材とを有し、前記支
持部材に所定の曲率で湾曲した装着凹部を設け、この装
着凹部に沿って前記固体撮像素子を湾曲状態で装着した
ことを特徴とする。また本発明は、薄膜チップ状に形成
された固体撮像素子と前記固体撮像素子を装着する支持
部材とを有する撮像装置の製造方法であって、前記支持
部材に所定の曲率で湾曲した装着凹部を設け、この装着
凹部に沿って前記固体撮像素子を湾曲状態で装着する組
み立て工程を有することを特徴とする。
In order to achieve the above object, the present invention provides a solid-state image sensor formed in a thin film chip shape,
A supporting member on which the solid-state image sensor is mounted, the supporting member is provided with a mounting recess curved with a predetermined curvature, and the solid-state image sensor is mounted in a curved state along the mounting recess. . Further, the present invention is a method for manufacturing an imaging device having a solid-state imaging device formed in the shape of a thin film chip and a support member for mounting the solid-state imaging device, wherein the support member has a mounting recess curved at a predetermined curvature. It is characterized by including an assembling step of mounting the solid-state imaging device in a curved state along the mounting recess.

【0007】本発明の撮像装置では、固体撮像素子の支
持部材に設けた装着凹部に薄膜チップ状に形成された固
体撮像素子を装着することにより、装着凹部の曲率に沿
って固体撮像素子をガイドでき、所定の曲率に変形させ
て支持部材に装着、固定できる。したがって、この固体
撮像素子を装着した支持部材を各種装置内に組み込むこ
とにより、薄膜化された固体撮像素子を所望の曲率に適
正に湾曲させた状態で各種装置内に容易に配置でき、各
種装置の小型化や品質の向上、ならびに歩留改善等に寄
与できる。
In the image pickup apparatus of the present invention, by mounting the solid-state image sensor formed in the shape of a thin film chip in the mounting recess provided in the support member of the solid-state image sensor, the solid-state image sensor is guided along the curvature of the mounting recess. Therefore, it can be attached to and fixed to the support member after being deformed to a predetermined curvature. Therefore, by incorporating the support member on which the solid-state image pickup device is mounted in various devices, the thin-film solid-state image pickup device can be easily arranged in various devices in a state of being appropriately curved to a desired curvature. It can contribute to downsizing, quality improvement, and yield improvement.

【0008】また、本発明の製造方法では、薄膜チップ
状に形成された固体撮像素子と支持部材との組み立て工
程において、支持部材に所定の曲率で湾曲した装着凹部
を設け、この装着凹部に沿って固体撮像素子を湾曲状態
で装着するようにしたことから、装着凹部の曲率に沿っ
て固体撮像素子をガイドでき、所定の曲率に変形させて
支持部材に装着、固定できる。したがって、この固体撮
像素子を装着した支持部材を各種装置内に組み込むこと
により、薄膜化された固体撮像素子を所望の曲率に適正
に湾曲させた状態で各種装置内に容易に配置でき、各種
装置の小型化や品質の向上、ならびに歩留改善等に寄与
できる。
Further, according to the manufacturing method of the present invention, in the process of assembling the solid-state image pickup device formed in the shape of a thin film chip and the support member, the support member is provided with a mounting recess curved with a predetermined curvature, and the mounting recess is provided along the mounting recess. Since the solid-state image sensor is mounted in a curved state, the solid-state image sensor can be guided along the curvature of the mounting recess, and can be mounted on and fixed to the support member after being deformed to a predetermined curvature. Therefore, by incorporating the support member on which the solid-state image pickup device is mounted in various devices, the thin-film solid-state image pickup device can be easily arranged in various devices in a state of being appropriately curved to a desired curvature. It can contribute to downsizing, quality improvement, and yield improvement.

【0009】[0009]

【発明の実施の形態】以下、本発明による撮像装置およ
びその製造方法の実施の形態例について説明する。な
お、以下に説明する実施の形態は、本発明の好適な具体
例であり、技術的に好ましい種々の限定が付されている
が、本発明の範囲は、以下の説明において、特に本発明
を限定する旨の記載がない限り、これらの態様に限定さ
れないものとする。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an image pickup device and a manufacturing method thereof according to the present invention will be described below. The embodiments described below are preferred specific examples of the present invention, and various technically preferable limitations are given. However, the scope of the present invention is not limited to the present invention in the following description. Unless otherwise stated, the present invention is not limited to these embodiments.

【0010】図1は本発明の第1の実施の形態による撮
像装置をカメラモジュールに組み込んだ状態を示す断面
図である。このカメラモジュールは、ケース10の前面
に集光レンズ20を配置し、ケース10の内部に固体撮
像素子30を設けた配線基板40をレンズ20に対して
位置決め配置したものである。配線基板40は、固体撮
像素子30の支持部材として機能するものであり、レン
ズ20に対向する面に、所定の曲率で湾曲した装着凹部
42を有し、この装着凹部42に沿ってベアチップ状の
固体撮像素子30が湾曲状態で接着固定されている。
FIG. 1 is a sectional view showing a state in which an image pickup apparatus according to a first embodiment of the present invention is incorporated in a camera module. In this camera module, a condenser lens 20 is arranged on the front surface of a case 10, and a wiring board 40 having a solid-state image sensor 30 inside the case 10 is positioned and arranged with respect to the lens 20. The wiring board 40 functions as a support member of the solid-state imaging device 30, has a mounting recess 42 curved with a predetermined curvature on a surface facing the lens 20, and has a bare chip shape along the mounting recess 42. The solid-state imaging device 30 is fixed in a curved state by adhesion.

【0011】固体撮像素子30は、例えばインタライン
転送方式のCCD型イメージセンサであり、半導体基板
上に2次元マトリクス状に光電変換素子である多数のフ
ォトセンサと、各フォトセンサの列毎に配置された複数
のCCD垂直電荷転送部と、このCCD垂直電荷転送部
の端部に設けられるCCD水平電荷転送部と、このCC
D水平電荷転送部によって転送された信号電荷を電気信
号に変換する出力部等を設け、さらにその上部に遮光
膜、オンチップフィルタ、オンチップマイクロレンズ等
を設けたものである。また、本例の固体撮像素子30
は、膜厚が20μm以下の薄膜チップ状に形成されてお
り、パッケージ等をもたないベアチップ状態のままで、
配線基板40の装着凹部42に接着固定されている。
The solid-state image pickup device 30 is, for example, an interline transfer type CCD image sensor, and includes a large number of photosensors which are photoelectric conversion devices in a two-dimensional matrix on a semiconductor substrate, and is arranged in each photosensor column. A plurality of CCD vertical charge transfer sections, a CCD horizontal charge transfer section provided at an end of the CCD vertical charge transfer section, and a CC
An output unit for converting the signal charges transferred by the D horizontal charge transfer unit into an electric signal is provided, and a light shielding film, an on-chip filter, an on-chip microlens, etc. are further provided on the output unit. In addition, the solid-state imaging device 30 of this example
Is formed as a thin film chip having a film thickness of 20 μm or less, and is in a bare chip state without a package,
It is adhesively fixed to the mounting recess 42 of the wiring board 40.

【0012】装着凹部42は、上述のようにレンズ20
の射出瞳距離を短くした場合の感度シェーディングを防
止するため、固体撮像素子30を所定の曲率で湾曲した
状態で配置するためのものであり、固体撮像素子30の
湾曲形状に対応する所定の曲率で例えば円弧状に形成さ
れている。なお、この湾曲形状は、1次元方向だけの曲
率を有する部分的な例えば円弧面状のものであってもよ
いし、2次元方向の曲率を有する部分的な例えば球面状
のものであってもよい。また、円弧面状や球面状以上の
湾曲形状であってもよい。
The mounting recess 42 is formed in the lens 20 as described above.
In order to prevent sensitivity shading when the exit pupil distance is shortened, the solid-state image sensor 30 is arranged in a curved state with a predetermined curvature, and the predetermined curvature corresponding to the curved shape of the solid-state image sensor 30. Is formed in an arc shape, for example. The curved shape may be a partial one having a curvature in only one-dimensional direction, for example, an arc surface, or a partial one having a curvature in a two-dimensional direction, for example, a spherical shape. Good. Further, it may have a curved shape such as an arc surface shape or a spherical shape or more.

【0013】また、固体撮像素子30と配線基板40と
の電気的接続は、例えば固体撮像素子30側のパッド部
に対応するパッド部を配線基板40側に形成し、固体撮
像素子30の接着固定後、半田リフローによってパッド
部とパッド部とを接続するようにしてもよいし、固体撮
像素子30の接着固定後、固体撮像素子30のパッド部
と配線基板40側のパッドとをワイヤボンディングする
ようにしてもよい。また、本例では、配線基板40の固
体撮像素子30の裏側に周辺ICチップ50A、50B
が設けられている。ただし、配線基板40の面積が固体
撮像素子30に対して大きい場合には、配線基板40の
固体撮像素子30を設けた表面側に周辺ICチップを設
けることも可能である。
Further, for the electrical connection between the solid-state image pickup device 30 and the wiring board 40, for example, a pad portion corresponding to the pad portion on the solid-state image pickup device 30 side is formed on the wiring board 40 side, and the solid-state image pickup element 30 is adhesively fixed. After that, the pads may be connected to each other by solder reflow, or after the solid-state imaging device 30 is bonded and fixed, the pads of the solid-state imaging device 30 and the pads on the wiring board 40 side may be wire-bonded. You may Further, in this example, the peripheral IC chips 50A and 50B are provided on the back side of the solid-state imaging device 30 of the wiring board 40.
Is provided. However, when the area of the wiring board 40 is larger than that of the solid-state imaging device 30, it is possible to provide a peripheral IC chip on the surface side of the wiring board 40 on which the solid-state imaging device 30 is provided.

【0014】次に、このような撮像装置の製造方法につ
いて説明する。図2は本実施の形態による撮像装置の製
造方法を示す説明図である。まず、図2(A)に示す半
導体ウェーハ60には、上述した固体撮像素子30が多
数形成されている。この半導体ウェーハ60は、例えば
上述した特開2001−257337号公報に開示され
るような方法で薄膜化されたものである。すなわち、シ
リコン基板(ウェーハ)上に多孔質シリコン層を設け、
その上層に成長させたエピタキシャル層に固体撮像素子
の各層を形成した後、多孔質シリコン層でシリコン基板
を分離することにより、エピタキシャル成長による半導
体基板だけを分離し、薄膜状のウェーハを得るようにし
て例えば20μm以下の膜厚を有する固体撮像素子を作
製する。
Next, a method of manufacturing such an image pickup device will be described. FIG. 2 is an explanatory diagram showing a method of manufacturing the image pickup device according to the present embodiment. First, on the semiconductor wafer 60 shown in FIG. 2 (A), a large number of the above-mentioned solid-state imaging devices 30 are formed. The semiconductor wafer 60 is thinned by the method disclosed in, for example, Japanese Patent Laid-Open No. 2001-257337. That is, a porous silicon layer is provided on a silicon substrate (wafer),
After forming each layer of the solid-state imaging device on the epitaxial layer grown on the upper layer, by separating the silicon substrate by the porous silicon layer, only the semiconductor substrate by epitaxial growth is separated to obtain a thin film wafer. For example, a solid-state image sensor having a film thickness of 20 μm or less is manufactured.

【0015】次に、このような薄膜ウェーハ60を図2
(B)に示すように、補強用の支持台70上に張り付け
た状態でダイジングを行い、チップ毎に分離する。この
後、固体撮像素子30を支持台70から適宜剥離するこ
とにより、薄膜チップ状の固体撮像素子30を得る。そ
して、図2(C)に示すように、この薄膜チップ状の固
体撮像素子30を配線基板40の装着凹部42に位置決
め装着し、接着剤によって密着状態で固定する。これに
より、固体撮像素子30を装着凹部42の曲率形状に対
応する曲率に湾曲した状態で装着、固定できる。
Next, such a thin film wafer 60 is shown in FIG.
As shown in (B), dicing is performed in a state of being stuck on the supporting base 70 for reinforcement, and the chips are separated. After that, the solid-state imaging device 30 is appropriately separated from the support base 70 to obtain the thin-film chip-shaped solid-state imaging device 30. Then, as shown in FIG. 2C, the solid-state imaging device 30 in the form of a thin film chip is positioned and mounted in the mounting recess 42 of the wiring board 40, and is fixed in an adhesive state with an adhesive. As a result, the solid-state imaging device 30 can be mounted and fixed in a state of being curved in a curvature corresponding to the curvature shape of the mounting recess 42.

【0016】なお、固体撮像素子30を装着凹部42に
装着する場合の設備としては、例えば、固体撮像素子3
0をロボットアームに搭載した真空吸着ノズルによって
吸着保持し、ロボットアームの作動によって所定位置に
位置決め配置された配線基板40の装着凹部42に固体
撮像素子30を位置決め配置する。そして、真空吸着ノ
ズルと並設された押圧部材の作動によって固体撮像素子
30を装着凹部42側に押し付け、固体撮像素子30を
装着凹部42の曲率形状をガイドとして湾曲変形させ、
固体撮像素子30と装着凹部42との間に設けた接着剤
によって両者を接合する。この際、押圧部材の先端面
に、装着凹部42の曲率形状に対応する形状のゴム等の
弾性パッドを装着し、この弾性パッドによって固体撮像
素子30を装着凹部42側に押し付けることにより、安
定的に固体撮像素子30の装着作業を行うことが可能と
なり、固体撮像素子30の破損等を生じることもない。
その後、固体撮像素子30を配線基板40のパッド部に
接続し、図1に示すモジュールへの組み立て作業を行
う。
The equipment for mounting the solid-state image sensor 30 in the mounting recess 42 includes, for example, the solid-state image sensor 3
0 is suction-held by the vacuum suction nozzle mounted on the robot arm, and the solid-state imaging device 30 is positioned and arranged in the mounting recess 42 of the wiring board 40 which is positioned and arranged at a predetermined position by the operation of the robot arm. Then, the solid-state imaging device 30 is pressed toward the mounting recess 42 side by the operation of the pressing member provided in parallel with the vacuum suction nozzle, and the solid-state imaging device 30 is curved and deformed using the curvature shape of the mounting recess 42 as a guide.
The solid-state image sensor 30 and the mounting recess 42 are bonded together by an adhesive provided between the two. At this time, an elastic pad made of rubber or the like having a shape corresponding to the curvature shape of the mounting recess 42 is mounted on the tip end surface of the pressing member, and the solid-state imaging device 30 is pressed against the mounting recess 42 side by this elastic pad, so that a stable operation is achieved. It becomes possible to perform the mounting work of the solid-state image sensor 30, and the solid-state image sensor 30 is not damaged.
After that, the solid-state imaging device 30 is connected to the pad portion of the wiring board 40, and the assembly work for the module shown in FIG. 1 is performed.

【0017】次に、本発明の第2の実施の形態について
説明する。上述した第1の実施の形態では、固体撮像素
子30を配線基板40の装着凹部42に装着したが、こ
の第2の実施の形態は、上述した第1の実施の形態と同
様の薄膜チップ状の固体撮像素子30をリードフレーム
付きパッケージに設けた装着凹部に装着するようにした
ものである。図3は本発明の第2の実施の形態による撮
像装置を示す断面図である。パッケージ本体80には、
中央部に固体撮像素子30を所定の曲率で湾曲させて装
着するための装着凹部82が形成されており、上述した
第1の実施の形態と同様の工程で、固体撮像素子30が
接着固定されている。また、パッケージ本体80の外側
部には、リードフレーム90が組み込まれており、この
リードフレーム90のインナリード部に固体撮像素子3
0がワイヤボンディングされている。そして、パッケー
ジ本体80の上面に透明のカバー100を装着すること
により、パッケージを完成する。
Next, a second embodiment of the present invention will be described. In the first embodiment described above, the solid-state image sensor 30 is mounted in the mounting recess 42 of the wiring board 40. However, in the second embodiment, the same thin film chip shape as that of the first embodiment described above is used. The solid-state imaging device 30 is mounted in a mounting recess provided in the package with the lead frame. FIG. 3 is a sectional view showing an image pickup apparatus according to the second embodiment of the present invention. In the package body 80,
A mounting recess 82 for bending and mounting the solid-state imaging device 30 with a predetermined curvature is formed in the central portion, and the solid-state imaging device 30 is bonded and fixed in the same process as in the above-described first embodiment. ing. Further, a lead frame 90 is incorporated on the outer side of the package body 80, and the solid-state image sensor 3 is attached to the inner lead portion of the lead frame 90.
0 is wire-bonded. Then, the transparent cover 100 is mounted on the upper surface of the package body 80 to complete the package.

【0018】なお、本例では、ワイヤボンディングによ
って固体撮像素子30をリードフレーム90に接続する
例について説明したが、例えばパッケージの底面に固体
撮像素子30側のパッド部に対応するパッド部を設けて
ダイボンディングする構成の場合には、固体撮像素子3
0の接着固定後、半田リフローによってパッド部とパッ
ド部とを接続するようにしてもよい。また、図3に示す
撮像装置の製造方法は、図2に示す構成とほぼ同様であ
るので説明は省略する。
In this example, the solid-state image pickup device 30 is connected to the lead frame 90 by wire bonding. However, for example, a pad portion corresponding to the pad portion on the solid-state image pickup device 30 side is provided on the bottom surface of the package. In the case of the configuration of die bonding, the solid-state image sensor 3
After bonding and fixing 0, the pad portions may be connected to each other by solder reflow. The method of manufacturing the imaging device shown in FIG. 3 is almost the same as the configuration shown in FIG.

【0019】以上のような本実施の形態では、固体撮像
素子を所望の曲率に湾曲させて配置でき、射出瞳距離の
短いカメラでもオンチップレンズの瞳補正を行うことな
く、感度シェーディングを低減することが可能である。
また、薄膜チップ状の固体撮像素子を形成する場合に、
エピタキシャル層の基礎として用いたシリコン基板(ウ
ェーハ)を剥離することにより薄膜化する方法を用いた
ため、裏面研削を行う必要がなく、シリコン基板は繰り
返し用いることができ、低コスト化を図ることができ
る。なお、以上は固体撮像素子を配線基板やリードフレ
ーム付きパッケージに装着する場合について説明した
が、本発明はこれに限定されるものではなく、他の支持
部材に固体撮像素子を装着する構成に広く適用し得るも
のである。また、CCD型イメージセンサ以外の固体撮
像素子にも適用可能である。また、固体撮像素子を薄膜
化する方法についても、他の方法で薄膜化するようにし
てもよい。
In this embodiment as described above, the solid-state image pickup element can be arranged so as to be curved to a desired curvature, and sensitivity shading can be reduced without performing pupil correction of the on-chip lens even in a camera having a short exit pupil distance. It is possible.
Also, when forming a thin film chip-shaped solid-state imaging device,
Since the method of thinning the silicon substrate (wafer) used as the basis of the epitaxial layer is used, there is no need to perform backside grinding, the silicon substrate can be repeatedly used, and cost reduction can be achieved. . Although the case where the solid-state imaging device is mounted on the wiring board or the package with the lead frame has been described above, the present invention is not limited to this, and is widely applicable to a configuration in which the solid-state imaging device is mounted on another supporting member. It is applicable. Further, it can be applied to a solid-state image pickup device other than the CCD image sensor. Also, as for the method of thinning the solid-state imaging device, the thickness may be thinned by another method.

【0020】[0020]

【発明の効果】以上説明したように本発明の撮像装置に
よれば、固体撮像素子の支持部材に設けた装着凹部に薄
膜チップ状に形成された固体撮像素子を装着することに
より、装着凹部の曲率に沿って固体撮像素子をガイドで
き、所定の曲率に変形させて支持部材に装着、固定でき
るので、この固体撮像素子を装着した支持部材を各種装
置内に組み込むことにより、薄膜化された固体撮像素子
を所望の曲率に適正に湾曲させた状態で各種装置内に容
易に配置でき、各種装置の小型化や品質の向上、ならび
に歩留改善等に寄与できる。
As described above, according to the image pickup apparatus of the present invention, by mounting the solid-state image pickup device formed in the shape of a thin film chip in the mounting recess provided in the support member of the solid-state image pickup device, The solid-state image sensor can be guided along the curvature, and can be mounted on and fixed to the support member after being deformed to a predetermined curvature. The image pickup element can be easily arranged in various devices in a state of being appropriately curved to a desired curvature, which can contribute to downsizing of various devices, improvement of quality, and improvement of yield.

【0021】また、本発明の製造方法によれば、薄膜チ
ップ状に形成された固体撮像素子と支持部材との組み立
て工程において、支持部材に所定の曲率で湾曲した装着
凹部を設け、この装着凹部に沿って固体撮像素子を湾曲
状態で装着するようにしたことから、装着凹部の曲率に
沿って固体撮像素子をガイドでき、所定の曲率に変形さ
せて支持部材に装着、固定できるので、この固体撮像素
子を装着した支持部材を各種装置内に組み込むことによ
り、薄膜化された固体撮像素子を所望の曲率に適正に湾
曲させた状態で各種装置内に容易に配置でき、各種装置
の小型化や品質の向上、ならびに歩留改善等に寄与でき
る。
Further, according to the manufacturing method of the present invention, in the process of assembling the solid-state image pickup device formed in the shape of a thin film chip and the support member, the support member is provided with a mounting recess curved at a predetermined curvature, and the mounting recess is provided. Since the solid-state image sensor is mounted in a curved state along with, the solid-state image sensor can be guided along the curvature of the mounting recess, and can be mounted and fixed to the support member after being deformed to a predetermined curvature. By incorporating the support member with the image pickup device mounted in various devices, it is possible to easily arrange the thin-film solid-state image pickup device in various devices in a state where the solid-state image pickup device is properly curved to a desired curvature, and to reduce the size of various devices. It can contribute to quality improvement and yield improvement.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施の形態による撮像装置をカ
メラモジュールに組み込んだ状態を示す断面図である。
FIG. 1 is a cross-sectional view showing a state in which an imaging device according to a first embodiment of the present invention is incorporated in a camera module.

【図2】図1に示す撮像装置の製造方法を示す説明図で
ある。
FIG. 2 is an explanatory diagram showing a method of manufacturing the imaging device shown in FIG.

【図3】本発明の第2の実施の形態によるパッケージ化
された撮像装置を示す断面図である。
FIG. 3 is a sectional view showing a packaged image pickup device according to a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

10……ケース、20……集光レンズ、30……固体撮
像素子、40……配線基板、42、82……装着凹部、
50A、50B……周辺ICチップ、60……半導体ウ
ェーハ、70……支持台、80……パッケージ本体、9
0……リードフレーム、100……透明カバー。
10 ... Case, 20 ... Condensing lens, 30 ... Solid-state image sensor, 40 ... Wiring board, 42, 82 ... Mounting recess,
50A, 50B ... peripheral IC chip, 60 ... semiconductor wafer, 70 ... support base, 80 ... package body, 9
0: Lead frame, 100: Transparent cover.

フロントページの続き Fターム(参考) 4M118 AB01 BA06 GD03 HA24 HA25 HA29 5C024 CY47 CY49 EX21 EX22 EX23 EX42 EX43 EX51 GY04 5F088 BA15 BB03 GA04 JA03 JA10 JA12 JA20 Continued front page    F-term (reference) 4M118 AB01 BA06 GD03 HA24 HA25                       HA29                 5C024 CY47 CY49 EX21 EX22 EX23                       EX42 EX43 EX51 GY04                 5F088 BA15 BB03 GA04 JA03 JA10                       JA12 JA20

Claims (22)

【特許請求の範囲】[Claims] 【請求項1】 薄膜チップ状に形成された固体撮像素子
と、前記固体撮像素子を装着する支持部材とを有し、 前記支持部材に所定の曲率で湾曲した装着凹部を設け、
この装着凹部に沿って前記固体撮像素子を湾曲状態で装
着した、ことを特徴とする撮像装置。
1. A solid-state image sensor formed in the shape of a thin film chip, and a support member for mounting the solid-state image sensor, wherein the support member is provided with a mounting recess curved at a predetermined curvature.
An imaging device, wherein the solid-state imaging device is mounted along the mounting recess in a curved state.
【請求項2】 前記支持部材はリードフレーム付のパッ
ケージであり、前記パッケージに設けた装着凹部に前記
固体撮像素子を湾曲状態で接着したことを特徴とする請
求項1記載の撮像装置。
2. The image pickup apparatus according to claim 1, wherein the support member is a package with a lead frame, and the solid-state image pickup element is bonded in a curved state to a mounting recess provided in the package.
【請求項3】 前記パッケージに設けた装着凹部に固体
撮像素子を湾曲状態で接着することにより、固体撮像素
子をダイボンディングによってリードフレームに接続し
たことを特徴とする請求項2記載の撮像装置。
3. The image pickup device according to claim 2, wherein the solid-state image pickup device is connected to the lead frame by die bonding by adhering the solid-state image pickup device in a curved state to a mounting recess provided in the package.
【請求項4】 前記パッケージに設けた装着凹部に固体
撮像素子を湾曲状態で接着し、かつ、固体撮像素子をワ
イヤボンディングによってリードフレームに接続したこ
とを特徴とする請求項2記載の撮像装置。
4. The image pickup apparatus according to claim 2, wherein the solid-state image sensor is bonded in a curved state to a mounting recess provided in the package, and the solid-state image sensor is connected to a lead frame by wire bonding.
【請求項5】 前記支持部材は配線基板であり、前記配
線基板に設けた装着凹部に固体撮像素子を湾曲状態で接
着したことを特徴とする請求項1記載の撮像装置。
5. The image pickup device according to claim 1, wherein the support member is a wiring board, and a solid-state image pickup element is bonded in a curved state to a mounting recess provided in the wiring board.
【請求項6】 前記配線基板に設けた装着凹部に固体撮
像素子を湾曲状態で接着することにより、固体撮像素子
をダイボンディングによって基板配線に接続したことを
特徴とする請求項5記載の撮像装置。
6. The image pickup device according to claim 5, wherein the solid-state image pickup element is connected to the board wiring by die bonding by adhering the solid-state image pickup element in a curved state to a mounting recess provided in the wiring board. .
【請求項7】 前記配線基板に設けた装着凹部に固体撮
像素子を湾曲状態で接着し、かつ、固体撮像素子をワイ
ヤボンディングによって基板配線に接続したことを特徴
とする請求項5記載の撮像装置。
7. The image pickup device according to claim 5, wherein the solid-state image pickup element is bonded in a curved state to a mounting recess provided in the wiring board, and the solid-state image pickup element is connected to the board wiring by wire bonding. .
【請求項8】 前記配線基板はカメラモジュール内に組
み込まれるものであることを特徴とする請求項5記載の
撮像装置。
8. The image pickup apparatus according to claim 5, wherein the wiring board is incorporated in a camera module.
【請求項9】 前記支持部材の装着凹部は1次元方向の
湾曲面を有することを特徴とする請求項1記載の撮像装
置。
9. The image pickup apparatus according to claim 1, wherein the mounting recess of the support member has a curved surface in a one-dimensional direction.
【請求項10】 前記支持部材の装着凹部は2次元方向
の湾曲面を有することを特徴とする請求項1記載の撮像
装置。
10. The image pickup apparatus according to claim 1, wherein the mounting recess of the support member has a curved surface in a two-dimensional direction.
【請求項11】 前記固体撮像素子は膜厚が20μm以
下の薄膜チップ状に形成されていることを特徴とする請
求項1記載の撮像装置。
11. The image pickup apparatus according to claim 1, wherein the solid-state image pickup element is formed in a thin film chip shape having a film thickness of 20 μm or less.
【請求項12】 薄膜チップ状に形成された固体撮像素
子と前記固体撮像素子を装着する支持部材とを有する撮
像装置の製造方法であって、 前記支持部材に所定の曲率で湾曲した装着凹部を設け、
この装着凹部に沿って前記固体撮像素子を湾曲状態で装
着する組み立て工程を有する、ことを特徴とする撮像装
置の製造方法。
12. A method of manufacturing an image pickup apparatus, comprising: a solid-state image sensor formed in the shape of a thin film chip; and a support member for mounting the solid-state image sensor, wherein the support member has a mounting recess curved at a predetermined curvature. Provided,
A method of manufacturing an image pickup device, comprising: an assembling step of mounting the solid-state image pickup element in a curved state along the mounting recess.
【請求項13】 前記支持部材はリードフレーム付のパ
ッケージであり、前記パッケージに設けた装着凹部に前
記固体撮像素子を湾曲状態で接着することを特徴とする
請求項12記載の撮像装置の製造方法。
13. The method of manufacturing an image pickup device according to claim 12, wherein the support member is a package with a lead frame, and the solid-state image pickup element is bonded in a curved state to a mounting recess provided in the package. .
【請求項14】 前記パッケージに設けた装着凹部に固
体撮像素子を湾曲状態で接着することにより、固体撮像
素子をダイボンディングによってリードフレームに接続
することを特徴とする請求項13記載の撮像装置の製造
方法。
14. The image pickup device according to claim 13, wherein the solid-state image pickup device is connected to the lead frame by die bonding by adhering the solid-state image pickup device in a curved state in a mounting recess provided in the package. Production method.
【請求項15】 前記パッケージに設けた装着凹部に固
体撮像素子を湾曲状態で接着し、かつ、固体撮像素子を
ワイヤボンディングによってリードフレームに接続する
ことを特徴とする請求項13記載の撮像装置の製造方
法。
15. The image pickup apparatus according to claim 13, wherein the solid-state image sensor is bonded in a curved state to a mounting recess provided in the package, and the solid-state image sensor is connected to a lead frame by wire bonding. Production method.
【請求項16】 前記支持部材は配線基板であり、前記
配線基板に設けた装着凹部に固体撮像素子を湾曲状態で
接着したことを特徴とする請求項12記載の撮像装置の
製造方法。
16. The method of manufacturing an image pickup apparatus according to claim 12, wherein the support member is a wiring board, and a solid-state image pickup element is bonded in a curved state to a mounting recess provided in the wiring board.
【請求項17】 前記配線基板に設けた装着凹部に固体
撮像素子を湾曲状態で接着することにより、固体撮像素
子をダイボンディングによって基板配線に接続したこと
を特徴とする請求項16記載の撮像装置の製造方法。
17. The image pickup device according to claim 16, wherein the solid-state image pickup device is connected to the substrate wiring by die bonding by adhering the solid-state image pickup device in a curved state to a mounting recess provided in the wiring board. Manufacturing method.
【請求項18】 前記配線基板に設けた装着凹部に固体
撮像素子を湾曲状態で接着し、かつ、固体撮像素子をワ
イヤボンディングによって基板配線に接続したことを特
徴とする請求項16記載の撮像装置の製造方法。
18. The image pickup device according to claim 16, wherein the solid-state image pickup element is bonded in a curved state to a mounting recess provided on the wiring board, and the solid-state image pickup element is connected to the board wiring by wire bonding. Manufacturing method.
【請求項19】 前記配線基板はカメラモジュール内に
組み込まれるものであることを特徴とする請求項16記
載の撮像装置の製造方法。
19. The method of manufacturing an image pickup device according to claim 16, wherein the wiring board is incorporated in a camera module.
【請求項20】 前記支持部材の装着凹部は1次元方向
の湾曲面を有することを特徴とする請求項12記載の撮
像装置の製造方法。
20. The method according to claim 12, wherein the mounting recess of the support member has a curved surface in a one-dimensional direction.
【請求項21】 前記支持部材の装着凹部は2次元方向
の湾曲面を有することを特徴とする請求項12記載の撮
像装置の製造方法。
21. The method of manufacturing an image pickup device according to claim 12, wherein the mounting recess of the support member has a curved surface in a two-dimensional direction.
【請求項22】 前記固体撮像素子は膜厚が20μm以
下の薄膜チップ状に形成されていることを特徴とする請
求項12記載の撮像装置の製造方法。
22. The method of manufacturing an image pickup device according to claim 12, wherein the solid-state image pickup element is formed in a thin film chip shape having a film thickness of 20 μm or less.
JP2002038148A 2002-02-15 2002-02-15 Image pickup device and manufacturing method therefor Pending JP2003244558A (en)

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Publication Number Publication Date
JP2003244558A true JP2003244558A (en) 2003-08-29

Family

ID=27779538

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008041739A1 (en) 2006-10-05 2008-04-10 Panasonic Corporation Imaging device, method for manufacturing the imaging device and cellular phone
US7547955B2 (en) * 2006-03-29 2009-06-16 Panasonic Corporation Semiconductor imaging device and method for manufacturing the same
TWI607555B (en) * 2015-05-28 2017-12-01 精材科技股份有限公司 Image sensing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547955B2 (en) * 2006-03-29 2009-06-16 Panasonic Corporation Semiconductor imaging device and method for manufacturing the same
WO2008041739A1 (en) 2006-10-05 2008-04-10 Panasonic Corporation Imaging device, method for manufacturing the imaging device and cellular phone
TWI607555B (en) * 2015-05-28 2017-12-01 精材科技股份有限公司 Image sensing device

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