JP2003234352A - Hetero-bipolar transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a hetero-bipolar transistor which can suppress a recombination current between an emitter and a base and can have characteristics of high-current amplification and the like while lowering a drive voltage using an SiGeC layer. <P>SOLUTION: An Si-collector embedded layer 11, a first base region 12 of an SiGeC layer having a high C content, a second base region 13 of an SiGeC or SiGe layer having a low C content and an Si gap layer 14 containing an emitter region 14a are stacked on an Si substrate 10. A content at least at the end of the second base region 13 on its emitter region side is set to lower than 0.8%. Thereby, in a depletion layer of an emitter/base junction, the formation of recombination centers due to C can be suppressed, improvements in the electrical characteristics, including current amplification caused by the reduction of a recombination current can be achieved while maintaining low- voltage drive characteristics. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hetero-bipolar transistor using a semiconductor layer containing silicon, and more particularly to a measure for lowering driving voltage.

[0002]

2. Description of the Related Art Conventionally, by changing the composition of the emitter region and the base region so that the bandgap of the emitter region is larger than that of the base region, the injection efficiency of the emitter is significantly improved and the characteristics of the transistor are improved. Hetero-bipolar transistor to improve (hereinafter, HBT
Is attracting attention as a high-performance element. This H
BT is being used as a device in the microwave / millimeter wave band because of its excellent high frequency characteristics.
HBT is conventionally GaAs which is a III-V group compound semiconductor.
Although it was produced by a combination of AlGaAs and AlGaAs, research and development of SiGe HBT utilizing the fact that the band gap of the base layer made of SiGe layer is smaller than Si has been actively pursued in recent years.

The SiGe HBT utilizes the fact that the band gap of Ge (0.66 eV at room temperature) is smaller than that of Si (1.12 eV at room temperature), and that the SiGe mixed crystal has a smaller band gap than Si. Then, the Si layer is used as the emitter region and the Si is used as the base region.
By using each Ge layer and reducing the bandgap of the base layer with respect to the emitter layer, it becomes possible to drive at a voltage lower than the drive voltage (about 0.7 V) in the homo Si bipolar transistor. The driving voltage here means a state in which the voltage between the base and the emitter becomes equal to the diffusion potential between the base and the emitter in the active region of the bipolar transistor. That is, in the NPN bipolar transistor, the energy difference at the valence band edge between the emitter layer and the base layer is increased to some extent to suppress the injection of holes from the base layer into the emitter layer, and Since the energy difference at the conduction band edge can be reduced, the drive voltage can be lowered.

In the HBT, the Ge content of the base region is gradually increased in the direction from the emitter region to the collector region, so that the band gap of the base region is gradually reduced in the direction from the emitter region to the collector region. It is possible to construct a graded composition. The electric field generated by this gradient composition accelerates the carriers injected into the base layer and drifts. This drift electric field can be made faster than the speed of carriers due to diffusion, so that the base transit time can be shortened and the cutoff frequency (f _T ) can be improved.

However, since the lattice constant of Ge (5.65Å) is different from the lattice constant of Si (5.43Å), increasing the Ge content causes dislocations due to strain due to the difference in the lattice constants, and causes an electrical change. The characteristics deteriorate. That is, in order to drive the device at a lower voltage, it is necessary to increase the Ge content in the SiGe layer.
When the content of Ge in the e layer is increased, the difference in lattice constant with the Si layer becomes larger, so that the content of Ge has an upper limit. Therefore, paying attention to the fact that the lattice constant of the C crystal is smaller than that of the Si crystal, the strain can be reduced in the SiGeC mixed crystal containing C in the SiGe layer (see Non-Patent Document 1). . And Si layer and SiG
An HBT utilizing a heterojunction with the eC layer is conceivable. However, in this HBT, impurities contained in the base region diffuse to the collector region side during heat treatment, so that a so-called parasitic barrier is formed between the base and collector. Is formed (see Non-Patent Document 2). The formation of this parasitic barrier causes a decrease in the current multiplication factor (β) and a deterioration in the early voltage Va and the cutoff frequency f _T. In order to solve this,
There is a method of interposing an undoped spacer layer between collectors (see Non-Patent Document 3). C has an effect of suppressing impurity diffusion (see Non-Patent Document 4). This effect is expected to maintain the profile of boron, which is a p-type impurity in the base region, and improve the characteristics such as the early voltage Va and the cutoff frequency f _T.

[0006]

[Non-Patent Document 1] LD Lanzerotti, A. St. Amour, C.
W. Liu, JC Strum, JK Watanabeand ND Theo
dore, IEEE Electron Device Letters, Vol.17 No.7 33
4 (1996)

[Non-Patent Document 2] JW Slotboom, G. Streutker, A. P
ruijmboom and DJ Gravesteijn, IEEE Electron Dev
ice Letters 12 pp 486 (1991)

[Non-Patent Document 3] EJ Prinz, PM Garone, PV S
chwartz, X. Xiano and J. C. Strum, IEDM Technology
Digital pp853 (1991)).

[Non-Patent Document 4] LD Lanzerotti, J. C. Strum, E.
Stach, R. Hull, T. Buyuklimanli and C. Magee, Appl
ied Physics Letters 70 (23) 3125 (1997)

[0007]

However, the SiGeC-H using the conventional SiGeC / Si heterojunction is used.
The BT has the following problems.

In order to further improve the current multiplication factor, SiGeC which is the base region of SiGeC-HBT
In order to reduce the band gap of the layer, the Ge content must be increased. At this time, as described above, in order to reduce the lattice strain due to the increase in the Ge content, the content of C may be increased. However, according to the experiments conducted by the present inventors, for example, in an HBT using a SiGeC layer having a C content rate of 0.8% or more as a base region, the n value of the base current is about 2. It was found that when the content ratio of C was increased, the high frequency characteristics of HBT were deteriorated. Hereinafter, the results of experiments conducted by the present inventors will be described.

FIGS. 8A and 8B respectively show S in order.
IgE _0.268 HBT, a diagram illustrating a Gummel plot of SiGe _{0.26 8} C _0.0091 HBT. 9 (a), (b)
_Are SiGe _0.268 HBT and SiGe, respectively.
It is a diagram illustrating a _0.268 C _0.0091 HBT current multiplication factor of the (beta). However, in the present specification, "SiGe _0.268 HB
T ”,“ SiGe _0.268 C _0.0091 HBT ”, etc., the composition ratio of Si is from 1 to other materials (Ge, C
Etc.) is the value obtained by subtracting the content rate.

It can be seen by comparing FIGS. 8 (a) and 8 (b).
Sea urchin, SiGe_0.268 C_0.0091HBT base current Ib
The n value (slope) of is SiGe_0.268 Compared to the n value of HBT
It has deteriorated significantly. In addition, FIG. 9 (a) and (b) are compared.
As you can see by comparison, SiGe_0.268 C_0.0091HBT
The current multiplication factor β of has a maximum value of only 50, and SiGe
_0.268 The maximum value of the current multiplication factor β of HBT is 400
It is deteriorated compared to. The cause is SiGeC-HB
When the C content in T approaches 1%, the recombination current becomes
The n value deteriorates due to the increase, and due to this deterioration of the n value,
It seems that the current multiplication factor β decreases.

FIG. 10 shows SiGe _0.268 HBT, SiG.
e A diagram for investigating the fitting between the measurement result of the forward current-voltage characteristic of the diode characteristic between the emitter and the base of the _0.268 C _0.0091 HBT and the measurement result of the sum of the recombination current of electrons and the diffusion current. is there. In the figure,
The calculated recombination current of the electrons of the diode and the diffusion current is calculated as the recombination lifetime (τr in the depletion layer between the emitter and the base).
) Is used as a parameter to fit the measurement results. As you can see from the results of this diode characteristic,
SiGeC layer with 0% C content (that is, SiGe layer)
, The recombination lifetime is about 100 nsec, whereas the recombination lifetime is about 400 psec in the SiGeC layer having a C content of 0.91%. in this way,
It is considered that when the C content is close to 1%, the recombination life becomes extremely small and the recombination current becomes very large, resulting in deterioration of the characteristics.

11 (a) and 11 (b) respectively show,
SiGe _0.268 containing Ge evenly in the base region
The recombination lifetime in the base region of HBT is 1 × 10 ^-5 s
It is a figure which shows the result of simulating a Gummel plot and a current multiplication factor by changing from ec to 1 * 10 <^-9> sec. As can be seen from FIG. 11 (a), when the recombination life becomes short, the collector current is not affected so much, but the n value is deteriorated because the recombination current of the base current becomes very large. . In addition, FIG.
As can be seen from (b), when the recombination life becomes short,
As described above, the current multiplication factor β is significantly reduced due to the increase in the recombination current of the base current. As described above, when the recombination life becomes short, it causes deterioration of the characteristics of the transistor.

In SiGeC-HBT having a high content of C, one of the causes of shortening the recombination life is that in the case of a SiGeC crystal having a high content of C, the amount of C existing in the interstitial position in the crystal is large. It can be increased. It is considered that C existing in this interstitial position constitutes a recombination level and increases the recombination current.

An object of the present invention is to provide a hetero-bipolar transistor which can realize a reduction in recombination current between the emitter and the base, a lower voltage driving and an improvement in high frequency characteristics.

[0015]

A first hetero-bipolar transistor of the present invention is provided on a substrate, and is provided on a collector region of a first conductivity type made of a semiconductor material containing Si, and on the collector region. , Si _1-xy Ge _x C _y layer with non-uniform C content (0 <x <1, 0 <y <1)
And a first conductivity type emitter region made of a semiconductor material containing Si, which is provided on the base region and forms a heterojunction with the base region. A portion of the base region having the highest C content is separated from a region adjacent to the emitter region, and a region of the base region excluding a region adjacent to the emitter region is separated from the emitter region to the collector. It has a composition in which the C content increases in the direction toward the region.

As a result, the C content is relatively low in the region of the base region adjacent to the emitter region, and therefore the depletion layer formed at the emitter-base junction has few regions having a high C content, resulting in depletion. The number of recombination centers in the layer can be reduced. Therefore, the recombination current caused by the recombination center existing in the depletion layer can be suppressed. That is, it is possible to improve the electric characteristics such as the current multiplication factor and the high frequency characteristic while lowering the driving voltage by using the heterojunction using the base region made of the SiGeC layer. A region of the base region excluding a region adjacent to the emitter region has a composition in which the C content increases in the direction from the emitter region to the collector region, and thus has a high C content and a large number of recombination centers. Is as far as possible from the emitter-base junction, and there is an advantage that the recombination current can be suppressed and the driving voltage can be lowered.

The second hetero-bipolar transistor of the present invention is provided on the substrate, is provided on the collector region of the first conductivity type made of a semiconductor material containing Si, and is provided on the collector region, and has a C content not higher than that of the collector region. Uniform Si _1-xy Ge
Si that is provided on the second conductivity type base region formed of the _x C _y layer (0 <x <1, 0 <y <1) and the base region, and forms a heterojunction between the base region and the Si. And a first conductivity type emitter region made of a semiconductor material containing, a portion of the base region having the largest C content is separated from a region adjacent to the emitter region, and the base region is It is divided into a first base region including a region adjacent to the collector region and a second base region including a region adjacent to the emitter region, and a band gap of at least an end of the first base region on the second base region side. Is equal to or smaller than the bandgap of the second base region, and the difference in Ge content between at least the second base region side end of the first base region and the second base region is Δx.
Then, when the difference in C content between at least the second base region side end portion of the first base region and the second base region is Δy, there is a relation of Δx ≧ 4.288Δy.

As a result, since the C content is relatively low in the region of the base region adjacent to the emitter region, the depletion layer formed at the emitter-base junction has few regions having a high C content and is depleted. The number of recombination centers in the layer can be reduced. Therefore, the recombination current caused by the recombination center existing in the depletion layer can be suppressed. That is, it is possible to improve the electric characteristics such as the current multiplication factor and the high frequency characteristic while lowering the driving voltage by using the heterojunction using the base region made of the SiGeC layer. Further, since the band gap of at least the second base region side end portion of the first base region is equal to or smaller than the band gap of the second base region, it is possible to remarkably reduce the driving voltage.

The second base of the first base region
In the region excluding the end portion on the side of the base region, the band gap is reduced in the direction from the second base region to the collector region in the first base region, so that the base traveling speed of the carrier as described above. It is possible to improve the high frequency characteristic by improving.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing each embodiment, Si which is a ternary mixed crystal semiconductor containing Si, Ge and C is described.
The basic advantage of the hetero-bipolar transistor in which the base layer of the hetero-bipolar transistor is composed of the GeC layer will be described.

FIG. 1 is a state diagram showing the relationship between the Ge and C contents, the band gap, and the lattice strain in the SiGeC ternary mixed crystal semiconductor. In the figure, the horizontal axis represents the Ge content rate, the vertical axis represents the C content rate, and the straight line indicates the composition condition in which the strain amount (including compressive strain and tensile strain) and the band gap are constant. . Figure 1
In the middle, the dot-hatched area is the Si on the Si layer.
This is a region where the lattice strain amount in the GeC layer is within 1.0% and the band gap can be made smaller than the band gap of the conventional practical SiGe (Ge content is about 10%). This region is represented by Si _1-xy Ge _x C _{y. In} SiGeC, where the Ge content is x and the C content is y, the following four straight lines: y = 0.122x-0. 032 Straight line: y = 0.1245x + 0.028 Straight line: y = 0.2332x-0.0233 (Ge content rate is 22% or less) Straight line: y = 0.0622x + 0.0127 (Ge content rate is 22% or less) This is the area to be used. In the figure, the SiGeC layer having a linear composition with a lattice strain of 0% is
It is lattice-matched with the underlying Si layer.

Therefore, in the hetero-bipolar transistor composed of the emitter layer, the base layer and the collector layer, the base layer is made of SiGeC having the composition of the region shown by dot hatching in FIG. A narrow bandgap base can be realized without inviting.

That is, SiGeC is used as a material for the base layer having a small band gap and a small amount of lattice distortion.
By selecting a ternary mixed crystal semiconductor material, it is possible to realize a highly reliable hetero-bipolar transistor capable of low-voltage operation and high-speed operation.

In FIG. 1, the underlayer of the SiGeC layer is S.
i is a state diagram in the case of having a single composition, but the underlayer is S
Even when i contains a small amount of Ge or C, the lattice strain of the SiGeC layer is 1.0% or less, and the underlying layer and SiGe
The same effect can be exhibited as long as a large difference between the C layer and the band gap can be secured.

FIG. 2 is a cross-sectional view of a hetero bipolar transistor (HBT) common to each embodiment of the present invention. As shown in the figure, the HBT of this embodiment includes a Si substrate 10 containing a p-type impurity, a Si collector buried layer 11 formed by introducing an n-type impurity (for example, phosphorus) into the Si substrate 10, and a Si substrate 10. A first base region 12 formed of a SiGeC layer having a high C content provided on the collector buried layer 11, and a SiGeC layer having a low C content or a SiGe layer provided on the first base region 12. The second base region 13, the Si cap layer 14 provided on the second base region 13, and the emitter electrode 15 made of a polysilicon film provided on the Si cap layer 14 are provided.

Next, a method of manufacturing this HBT will be described.
To do. First, an ion implantation method or the like is performed on the surface of the Si substrate 10.
The concentration of phosphorus (p), which becomes an n-type impurity, is about 2 ×
10 ¹⁷/ Cm³ And the collector burying layer 11 is introduced.
Form. Then, on the collector buried layer 11, U
SiGe having a high C content by HV-CVD method or the like
A first base region 12 composed of a C layer and a first base region 1
SiGeC layer or SiGe layer having a lower C content than 2
And a second base region 13 composed of
Grow. Here, at least the second base region 13
At the end of the emitter region (end of the Si cap layer)
Makes the C content less than 0.8%. At this time, Epita
As a source for axial growth, silane or
Disilane is used, Ge is used as a raw material of Ge, and C
Methylsilane or methylgermane is used as the raw material.
The first and second base regions 12 and 13 are, for example, p-type impurities.
About 4 × 10 of boron (B) that becomes a thing¹⁸/ Cm³ At the concentration of
Doping, and the film thickness of the first base region 12 is about 35 nm.
And the thickness of the second base region 13 is about 25 nm (
The total film thickness is about 60 nm). Then the second base area
An Si cap layer 14 made of a Si layer is epitaxially formed on the
Grow kiaxially. Impurities are added to the Si cap layer 14.
Without doping, the thickness of the Si cap layer 14 is about 10 n
It is about m. Further, on the Si cap layer 14, one
Forming a silicon oxide film 16 having an opening only
Arsenic (As) or the like is formed on the opening and the silicon oxide film 16.
N containing n-type impurities such as phosphorus (P)⁺ Type polysilicon
The emitter electrode 15 made of a film is formed. This emitter
Arsenic (or phosphorus) is contained in the electrode 15 in an amount of about 1 × 10.²⁰/ Cm
³ It is doped with the above high concentration, and S
An n-type impurity is diffused in the i-cap layer 14 to form a Si capacitor.
An emitter region 14a is formed in the cap layer 14.

That is, the second low C content is provided between the first base region 12 having a high C content and the emitter layer 14a.
The second base region 13 with the base region 13 interposed
Of the C content in at least the end portion on the side of the emitter region of less than 0.8%, the recombination center generated by the high content of C in the first base region 12 is formed between the emitter and the base. It is configured to be outside the depletion layer. With this configuration, the n value of the base current can be improved and the leak current can be reduced, and the problems shown in FIGS. 8B and 9B can be suppressed. . On the other hand, by providing the first base region 12 having a high C content, it is possible to achieve low voltage driving while suppressing the occurrence of lattice strain, as in the case of the conventional HBT using a Si / SiGeC heterojunction. . This is,
This is the basic effect of the present invention.

In FIG. 2, the first base region 1 is shown for convenience.
Although it is divided into 2 and the second base region 13, the present invention is
The present invention can be applied to those that cannot be divided into the first base region and the second base region. For example, it may be a case where the component ratio of Si _1-xy Ge _x C _y forming the base layer continuously changes in the entire base layer. That is, the C content in the region of the base layer adjacent to the emitter layer is C in the region of the base layer adjacent to the collector layer.
This is because if the content is smaller than the content, the basic effects of the present invention can be exhibited.

(First Embodiment) FIGS. 3A and 3B.
FIG. 3 is a diagram showing the C and Ge contents of the first base region and the second base region and the concentration of boron (B) which is an impurity in the first embodiment, and the emitter region-base region-collector when a voltage is applied. It is an energy band figure of a field. Note that, in FIG. 3A, illustration of the concentration of the n-type impurity is omitted.

As shown in FIG. 3A, in this embodiment, the Ge content is constant (for example, 26.8%) over the first base region 12 and the second base region 13. On the other hand, the C content is 0.91% in the first base region 12 and 0.3 in the second base region 13.
It is assumed to be 5%. That is, the first base region 12 is made of Si
The Ge _0.268 C _0.0091 layer is formed, and the second base region 13 is formed of SiGe _0.268 C _0.0035 layer.

At this time, the band gap of the SiGe _0.268 C _0.0091 layer is about 0.95 eV, and Ge _0.268 C
The band gap of the _0.0035 layer is about 0.92 eV. As described above, when two SiGeC layers having the same Ge content are stacked, the bandgap having a higher C content becomes larger, so that as shown in FIG. A SiGeC layer having a low C content (second base region 1) is formed between the SiGeC layer and the first base region 12 having a high content.
By interposing 3), a barrier is less likely to be generated at the emitter-base junction. Therefore, the presence of the second base region 13 having a low C content does not adversely affect the driving voltage of the HBT. On the other hand, as described above, C
The second base region 13 having a low content is the emitter region 14a.
And the first base region 12, the recombination current in the depletion layer between the emitter and the base (region Rdp shown in FIG. 3B) can be reduced. In other words, HBT
In (1), it is possible to further reduce the driving voltage while suppressing the deterioration of the n value and the reduction of the current multiplication factor due to the increase of the recombination current.

When there is no boundary between the first base region 12 and the second base region 13 and the base layer cannot be divided into two layers, or when the base layer can be divided into three or more layers, for example, Si _1-xy Ge _x C _y constituting the layer
Even if the component ratio of C changes continuously over the entire base layer, if the C content in the portion of the base layer adjacent to the emitter layer is sufficiently small, the depletion formed at the emitter-base junction will occur. The effect of suppressing the recombination current in the layer can be exerted.

-Experimental Data Regarding First Embodiment- FIG. 12 is a table showing each parameter of the sample used in the experiment for confirming the effect of the present invention. In FIG. 12, the thickness of the Si cap layer 14 is represented by S, the thickness of the first base layer 12 is represented by D1, and the second base layer 1
The thickness of 3 is indicated as D2, and G in the first base layer 12
e content, C content, and boron concentration are respectively set to N _G1 ,
N _C1 , N _B1 are shown, and the Ge content, C content, and boron concentration in the second base layer 13 are N _G2 , N _C2 , and N, respectively.
_It is displayed as _B2 .

FIG. 13 is a diagram showing data of bias voltage-current characteristics measured for the sample shown in FIG. As shown in the figure, in the sample (No. 1) in which the layer having a low C content (second base region) is not provided, the recombination current is large because the slope of the voltage-current characteristic is gentle. Recognize. Further, in the sample (No. 2) in which the thickness of the second base region 13 having a low C concentration is 10 nm, the slope of the voltage-current characteristic is slightly higher than that in the sample (No. 1), and a slight recombination current reducing effect is obtained. Although seen, its effect is small. Further, in the sample (No. 3) in which the thickness of the second base region 13 having a low C concentration is 20 nm, the current gradient is slightly steep, and the effect of reducing the recombination current is clearly shown. Furthermore, in the sample (No. 4) in which the thickness of the second base layer 13 is 30 nm, the slope of the voltage-current characteristics is steep, and the effect of reducing the recombination current is very large.

In the samples used in this experiment,
Is an impurity in the first and second base regions 12 and 13.
The concentration of (boron) is 2 × 10¹⁸cm^-3And standard
Hetero-bipolar transistor base region
Pure substance concentration 1 × 10¹⁹cm^-3It is considerably lower than That
Therefore, the depletion layer at the emitter-base junction spreads.
It is considered that That is, in the base area
Impurity concentration is 1 × 10 ¹⁹cm^-3If the degree is
Emitter-base junction rather than the sample used in this experiment
Since the depletion layer in the second region is narrow, the second base region 1
If the thickness of 3 is about 5 nm or more, the recombination current is reduced.
The effect is obtained.

(Second Embodiment) FIGS. 4A and 4B.
FIG. 3 is a diagram showing the C and Ge contents of the first base region and the second base region and the concentration of boron (B) which is an impurity in the second embodiment, and the emitter region-base region-collector when a voltage is applied. It is an energy band figure of a field. Note that, in FIG. 4A, the illustration of the concentration of the n-type impurity is omitted.

In this embodiment, the first base region 1
The feature is that the Ge and C content rates of the two regions 12 and 13 are adjusted so that the band gaps of 2 and the second base region 13 become equal. For that purpose, the Ge content in the first base region 12 may be set higher than that in the second base region 13 without setting the Ge content in the first and second base regions to the same value. The composition of the SiGeC layer is represented by the general formula Si _1-xy Ge _x C _y , and the difference in C content between the first base region 12 and the second base region 13 is Δ.
When y, the difference Δx in Ge content between the first base region 12 and the second base region 13 is determined based on the following formula (1) Δx = 4.288 Δy (1). It should be noted that both the first base region 12 and the second base region 13 have a composition in which the Si layer is subjected to compressive strain.

As shown in FIG. 4A, in the present embodiment, the Ge content of the first base region 12 is set to a relatively high constant value (for example, 31.3%), and the G content of the second base region 13 is set to G.
The e content is set to a low constant value (for example, 26.8%). On the other hand, in the first base region 12, the C content is 1.
4% and 0.35% in the second base region 13. That is, the first base region 12 is made of SiGe.
_0.313 C _0.014 layer, the second base region 13 is made of Si
It _{consists of} Ge _0.268 C _0.0035 layers.

At this time, the band gap of the SiGe _0.313 C _0.014 layer is about 0.92 eV and Ge _0.268 C
The band gap of the _0.0035 layer is also about 0.92 eV,
As shown in FIG. 4B, the two base regions 12, 13 are
The conduction band edge at becomes flat. In this way, when two SiGeC layers having the same band gap are stacked, it is possible to further reduce the driving voltage. Then, as described above, the second base region 13 having a low C content is interposed between the emitter region 14a and the first base region 12, so that the depletion layer between the emitter and the base (see FIG. It is possible to reduce the recombination current in the region Rdp) shown in FIG. That is, in the HBT, particularly remarkable low voltage driving can be promoted while suppressing the deterioration of the n value and the reduction of the current multiplication factor due to the increase of the recombination current.

Further, since the conduction band edges in the two base regions 12 and 13 are flat, there is no hetero barrier which hinders the traveling of carriers, so that the operation speed of the hetero bipolar transistor can be increased. it can.

(Third Embodiment) FIGS. 5A and 5B.
FIG. 3 is a diagram showing the C and Ge contents of the first base region and the second base region and the concentration of boron (B) which is an impurity in the third embodiment, and the emitter region-base region-collector when a voltage is applied. It is an energy band figure of a field. Note that, in FIG. 5A, the illustration of the concentration of the n-type impurity is omitted.

In this embodiment, the first base region 1
The band gaps of the second base region 13 and the second base region 13 are made equal to each other so that the band gap of the first base region 12 changes in a direction of accelerating base traveling electrons.
The feature is that the Ge and C content rates of the first and second base regions 12 and 13 are adjusted. Therefore, the composition in the SiGeC layer is represented by the general formula Si _1-xy Ge _x C _y , and the difference in C content between the second base region side end of the first base region 12 and the second base region 13 is represented by Δy. When I did
The difference Δx in Ge content between the second base region side end of the first base region 12 and the second base region 13 is determined based on the above equation (1). Then, the first base region 12
The Ge content in is increased in the direction from the end portion on the second base region side toward the collector buried layer 11.

As shown in FIG. 5A, in this embodiment, the Ge content in the end portion of the first base region 12 on the second base region side is set to a higher value (for example, 20.0%), and The Ge content in the end portion of the first base region 12 on the collector buried layer side is set to a higher value (for example, 30%), and the Ge content in the second base region 13 is set to a low constant value (for example, 15.2%). On the other hand, the C content is higher in the first base region 12 by a constant value (for example, 1.4).
%), And the second base region 13 has a low constant value (for example, 0.3%). That is, the end of the first base region 12 on the second base region side is made of SiGe _0.20 C.
Consists _0.014 layer, the collector buried layer side end portion of the first base region 12 is made of SiGe _0.30 C _0.014 layer, the second
The base region 13 is composed of a SiGe _0.152 C _0.003 layer.

At this time, the band gap of the Ge _0.20 C _0.014 layer is about 1.02 eV, and SiGe _0.152 C
The band gap of the _0.003 layer is also about 1.02 eV,
As shown in FIG. 5B, the two base regions 12, 13 are
The band gaps at the boundaries of are equal. On the other hand, the first
The band gap at the end of the base region 12 on the collector buried layer side is about 0.93 eV. Therefore, in the first base region 12, the band gap changes so as to gradually decrease in the direction from the end portion on the second base region side toward the collector buried layer 11, so that electrons in the first base region 12 drift field. Is accelerated, the transit time of electrons is shortened, and the high frequency characteristics of the hetero bipolar transistor are improved. Further, when two SiGeC layers having the same band gap are laminated at the boundary portion, it is possible to achieve further lower voltage driving as in the second embodiment. Then, as described above, the second base region 13 having a low C content is interposed between the emitter region 14a and the first base region 12, so that the depletion layer between the emitter and the base (see FIG. It is possible to reduce the recombination current in the region Rdp) shown in FIG.

That is, in this embodiment, in addition to the same effect as the second embodiment, the high frequency characteristics of the hetero-bipolar transistor can be improved.

(Fourth Embodiment) FIGS. 6A and 6B.
FIG. 5 is a diagram showing the C and Ge contents of the first base region and the second base region and the concentration of boron (B) as an impurity in the fourth embodiment, and the emitter region-base region-collector at the time of voltage application. It is an energy band figure of a field. Note that, in FIG. 6A, the illustration of the concentration of the n-type impurity is omitted.

In this embodiment, the first base region 1
2 and the second base region 13 have equal band gaps, and the lattice strain at the boundary between the first and second base regions 12 and 13 is as small as possible.
The feature is that the Ge and C content rates of the first and second base regions 12 and 13 are adjusted. Therefore, while the Ge and C content in the second base region side end portion of the first base region 12 is the same as the second base region 13, the Ge content and C content in the first base region 12 are It is increased in the direction from the end of the base region side toward the collector buried layer 11. At that time, the composition of the SiGeC layer is represented by the general formula Si _1-xy Ge _x C _y , and the region of the first base region 12 excluding the end portion on the first base region side and the second base region 13 are represented.
When the difference in C content rate between and is Δy, the difference Δx in Ge content between the second base region 13 and the region of the first base region 12 excluding the end on the first base region side is expressed by the above formula (1). Based on.

As shown in FIG. 6A, in the present embodiment, the Ge content in the second base region 13 and the end of the first base region 12 on the second base region side has a common value (for example, 26). 0.8%), and the Ge content at the end of the first base region 12 on the collector buried layer side is set to a higher value (for example, 31.3%). On the other hand, the content rate of C is a common value (for example, 0.35%) in the second base region 13 and the end of the first base region 12 on the second base region side.
Then, it is assumed that the end portion of the first base region 12 on the collector buried layer side has a higher value (for example, 1.4%). That is, the second base region 13 and the first base region 12
And the second base region end of the consist SiGe _0.268 C _{0. 0035} layers, collector buried layer side end portion of the first base region 12 is made of SiGe _{0. 313} C _0.014 layer.

At this time, the band gap of the SiGe _0.268 C _0.0035 layer is about 0.93 eV, and SiGe _0.313
The bandgap of the C _0.014 layer is about 0.93 eV, and as shown in FIG.
The band gaps at 13 are equal. And the first,
Since the Ge and C contents are the same at the boundary between the second base regions 12 and 13, there is no sudden change in the lattice constant at the boundary, so that the lattice strain of the entire base region can be minimized. Therefore, it is possible to suppress the occurrence of defects such as dislocations due to lattice strain, so that it is possible to improve the electrical characteristics of the hetero bipolar transistor.

On the other hand, two SiGs having the same band gap
When the eC layer is laminated, as in the second embodiment, further low voltage driving can be achieved. Then, as described above, the second base region 13 having a low C content is interposed between the emitter region 14a and the first base region 12, so that the depletion layer between the emitter and the base (see FIG. It is possible to reduce the recombination current in the region Rdp) shown in FIG.

That is, in this embodiment, in addition to the same effect as in the second embodiment, the electrical characteristics of the hetero-bipolar transistor can be improved by suppressing the generation of defects.

(Fifth Embodiment) FIGS. 7A and 7B.
FIG. 5 is a diagram showing the C and Ge contents of the first base region and the second base region and the concentration of boron (B) which is an impurity in the fifth embodiment, and the emitter region-base region-collector when a voltage is applied. It is an energy band figure of a field. Note that, in FIG. 7A, the concentration of the n-type impurity is not shown.

In this embodiment, the first base region 1
The band gaps of the first base region 12 and the second base region 13 are made equal to each other, the band gap of the first base region 12 is changed to accelerate the base traveling electrons, and the first and second base regions 12, 13 are formed. The feature is that the Ge and C content rates of the first and second base regions 12 and 13 are adjusted so that the lattice strain at the boundary portion of 1) is minimized. To this end, the second base region 12 of the second
The Ge and C content in the base region side end portion is the same as that in the second base region 13, while the C and Ge content ratio in the first base region 12 is changed from the second base region side end portion to the collector buried layer 11. Increase in the direction.

As shown in FIG. 7A, in the present embodiment, the Ge content in the second base region 13 and the end of the first base region 12 on the second base region side has a common value (for example, 15). 0.2%), and the Ge content in the end portion of the first base region 12 on the collector buried layer side is set to a higher value (for example, 30%). On the other hand, the content ratio of C has a common value (for example, 0.3%) between the second base region 13 and the end of the first base region 12 on the second base region side, and
It is assumed that the end portion of the base region 12 on the collector buried layer side has a higher value (for example, 1.4%). That is, the second base region 13 and the end of the first base region 12 on the second base region side are made of a SiGe _0.152 C _0.003 layer,
The end of the first base region 12 on the collector buried layer side is made of Si.
It consists of Ge _0.30 C _{0.01 4} layers.

At this time, the band gap of the SiGe _0.152 C _0.003 layer is about 1.02 eV, and SiGe _0.30 C
_{The 0.014} layer band gap is about 0.93 eV. Therefore, in the first base region 12, the band gap changes so as to gradually decrease in the direction from the end portion on the second base region side toward the collector buried layer 11, so that electrons in the first base region 12 drift field. Is accelerated, the transit time of electrons is shortened, and the high frequency characteristics of the hetero bipolar transistor are improved. Since the Ge and C contents are the same at the boundary between the first and second base regions 12 and 13, there is no sudden change in the lattice constant at the boundary, so that the lattice strain of the entire base region is minimized. can do. Therefore, it is possible to suppress the occurrence of defects such as dislocations due to lattice strain, so that it is possible to improve the electrical characteristics of the hetero bipolar transistor.

In the case where two SiGeC layers having the same band gap are laminated at the boundary, the above-mentioned second
Similar to the above embodiment, further lower voltage driving can be achieved. Then, as described above, the second base region 13 having a low C content is interposed between the emitter region 14a and the first base region 12, so that the depletion layer between the emitter and the base (see FIG. It is possible to reduce the recombination current in the region Rdp) shown in FIG.

That is, in this embodiment, the effects of the third embodiment and the fourth embodiment can be exhibited together.

Other Embodiments In each of the above-described embodiments, only the case where the second base region 13 is the SiGeC layer has been described. However, in each of the above-described embodiments, the second base region 13 is formed of the SiGe layer. It can also be applied to what is configured.

[0059]

According to the hetero-bipolar transistor of the present invention, the C content of the region adjacent to the emitter region in the base region made of the SiGeC layer is made smaller than the C content of the region adjacent to the collector region. By suppressing the recombination current, electrical characteristics such as current multiplication factor and high frequency characteristics can be improved while lowering the driving voltage.

[Brief description of drawings]

FIG. 1 Ge and C in SiGeC ternary mixed crystal semiconductor
FIG. 3 is a state diagram showing the relationship between the content rate of, the band gap, and the lattice strain.

FIG. 2 is a cross-sectional view of a hetero bipolar transistor (HBT) common to each embodiment of the present invention.

3A and 3B show H in the first embodiment.
FIG. 5 is a diagram showing the C and Ge contents of BT and the boron concentration, and an energy band diagram when a voltage is applied.

4A and 4B show H in the second embodiment.
FIG. 5 is a diagram showing the C and Ge contents of BT and the boron concentration, and an energy band diagram when a voltage is applied.

5 (a) and 5 (b) are H in the third embodiment.
FIG. 5 is a diagram showing the C and Ge contents of BT and the boron concentration, and an energy band diagram when a voltage is applied.

6 (a) and 6 (b) are H in the fourth embodiment.
FIG. 5 is a diagram showing the C and Ge contents of BT and the boron concentration, and an energy band diagram when a voltage is applied.

7A and 7B show H in the fifth embodiment.
FIG. 5 is a diagram showing the C and Ge contents of BT and the boron concentration, and an energy band diagram when a voltage is applied.

8A and 8B are, respectively, SiGe.
_0.268 HBT, SiGe_0.268 C _0.0091HBT game
It is a figure which shows a le plot.

9 (a) and 9 (b) are, respectively, SiGe.
_0.268 HBT, a diagram illustrating a SiGe _0.268 C _{0. 0091} HBT current multiplication factor of the (beta).

FIG. 10: SiGe _0.268 HBT, SiGe _0.268 C
FIG. 9 is a diagram for investigating the fitting between the measurement result of the forward current-voltage characteristic of the diode characteristic between the emitter and the base of the _0.0091 HBT and the measurement result of the sum of the recombination current of electrons and the diffusion current.

FIGS. 11 (a) and 11 (b) respectively _{show a} Gummel plot and a current multiplication factor by _sequentially changing the recombination lifetime in the base region of SiGe _0.268 HBT containing Ge uniformly in the base region. It is a figure which shows the result of having performed.

FIG. 12 is a table showing parameters of a sample used in an experiment for confirming the effect of the present invention.

13 is a diagram showing data of bias voltage-current characteristics measured for the sample shown in FIG.

[Explanation of symbols]

10 Si substrate 11 Collector embedded layer 12 First base area 13 Second base area 14 Si cap layer 14a Emitter region 15 Emitter electrode

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Tsuyoshi Takagi             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Teruhito Onishi             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Minoru Kubo             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F term (reference) 5F003 AP00 BA92 BB01 BB04 BE07                       BF06 BG06 BM01

Claims (3)

[Claims] 1. A first conductivity type collector region formed on a substrate and made of a semiconductor material containing Si, and Si _1-xy Ge _x formed on the collector region and having a non-uniform C content. C _y layer (0 <x <1, 0 <y <
A second conductivity type base region made of 1) and a first conductivity type emitter region made of a semiconductor material containing Si which is provided on the base region and forms a heterojunction with the base region. The portion of the base region having the largest C content is separated from the region adjacent to the emitter region, and the region of the base region excluding the region adjacent to the emitter region is separated from the emitter region. A hetero-bipolar transistor having a composition in which the C content increases in the direction toward the collector region. 2. A first conductivity type collector region formed on a substrate and made of a semiconductor material containing Si, and Si _1-xy Ge _x formed on the collector region and having a non-uniform C content. C _y layer (0 <x <1, 0 <y <
A second conductivity type base region made of 1) and a first conductivity type emitter region made of a semiconductor material containing Si which is provided on the base region and forms a heterojunction with the base region. A portion of the base region having the largest C content is separated from a region adjacent to the emitter region, the base region includes a first base region including a region adjacent to the collector region, and A second base region including a region adjacent to the emitter region, and a band gap of at least a second base region side end portion of the first base region is equal to or smaller than the band gap of the second base region, The difference in Ge content between at least the second base region side end of the first base region and the second base region is Δx, and at least the second base region side of the first base region. Parts and the difference between the C content in the second base region is taken as [Delta] y, a relationship of Δx ≧ 4.288Δy, hetero-bipolar transistor. 3. The hetero bipolar transistor according to claim 2, wherein in the region of the first base region excluding the end portion on the second base region side, the first base region extends from the second base region toward the collector region. A hetero-bipolar transistor configured to have a small band gap in the direction.