JP2003229675A - Multilayered glass ceramic wiring board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayered glass ceramic wiring board that can be increased in strength even when a high dielectric layer is interposed between low dielectric layers and, in addition, has a high mounting reliability. <P>SOLUTION: This multilayered glass ceramic wiring board is provided with conductor wiring layers on and/or in a laminated substrate constituted by interlayering the high dielectric layer having a specific inductive capacity of ≥14, in the frequency region of 1 MHz to 3 GHz between the low dielectric layers composed of glass ceramic insulating layers having specific inductive capacities of ≤9 in the same frequency region. The three-point bending strength of this multilayered wiring board in a 3-mm span is adjusted to ≥300 MPa and the thicknesses tLK and tHK of the low and high dielectric layers are adjusted to meet the relation of tLK/tHK≥3. In addition, the number of pores having diameters of ≥20 μm existing in an area having a size of 100 μm by 100 μm in the cross-sectional mirror-finished photograph of the high dielectric layer is controlled to ≤5. <P>COPYRIGHT: (C)2003,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a glass ceramic multilayer wiring board, and more particularly to a glass ceramic multilayer wiring board having a high dielectric constant layer formed between low dielectric constant layers.

[0002]

2. Description of the Related Art With the rapid spread of portable information terminals such as mobile phones and notebook personal computers in recent years, there has been a strong demand for downsizing of electronic components to be mounted. As an example, a switching circuit and a power amplifier circuit of a mobile phone are composed of a plurality of resistors and capacitors. Conventionally, these passive elements are individually mounted on an electric circuit board to reduce the size of the module and reduce the manufacturing cost. Was in the way.

Accordingly, a glass-ceramic multilayer wiring board has been developed in which a glass component is mixed with a ceramic component to lower the sintering temperature and to greatly expand the degree of freedom in designing the material properties and the sintering temperature. Attempts have been made to incorporate these passive elements and reduce the size of the entire module.

Particularly, in order to form a passive element inside a substrate, a glass ceramic in which a high dielectric constant layer having a higher relative dielectric constant than the low dielectric constant layer is interposed between glass ceramic insulating layers having a low dielectric constant. Multilayer wiring boards have been proposed (see Patent Documents 1 to 3).

[0005]

[Patent Document 1] JP-A-2002-111220

[Patent Document 2] JP-A-2002-68832

[Patent Document 3] JP-A-2002-43759

[0006]

However, in the above-described glass-ceramic multilayer wiring board in which a high dielectric layer is interposed between low dielectric layers, it is difficult to simultaneously fire the high dielectric layer with a glass component. Since it is formed of a dielectric material such as BaTiO _3, the three-point bending strength of the high dielectric constant layer itself is low, and the sinterability with the low dielectric constant layer sandwiching the high dielectric constant layer is also low. As a result, the three-point bending strength of the entire glass ceramic multilayer wiring board is reduced, and there is a problem that the glass ceramic multilayer wiring board is easily broken during mounting.

Accordingly, it is an object of the present invention to provide a glass-ceramic multilayer wiring board which can have a high strength even if a high dielectric constant layer is interposed between low dielectric constant layers and has high mounting reliability.

[0008]

According to the present invention, the frequency band is formed by a glass ceramic insulating layer and has a frequency range of 1 MHz to 1 MHz.
Between low dielectric constant layers having a relative dielectric constant of 9 or less at 3 GHz,
A conductor wiring layer is provided on the surface and / or inside of a laminated substrate formed by laminating high dielectric layers having a relative dielectric constant of 14 or more in the same frequency range, a via hole conductor is provided inside the laminated substrate, and one of the laminated substrates is provided. A glass ceramic multilayer wiring board having connection terminals on the surface has a three-point bending strength of 300 MPa in a 3 mm span of the multilayer wiring board.
As described above, there is provided a glass-ceramic multilayer wiring board characterized in that the thickness t _{LK of} the low dielectric constant layer and the thickness t _HK of the high dielectric constant layer satisfy the relationship of t _LK / t _HK ≧ 3.

In such a multilayer wiring board, the thermal expansion coefficient α _{LK of the} low dielectric constant layer at 40 to 400 ° C. and the thermal expansion coefficient α _{HK of the} high dielectric constant layer are | α _LK −α _HK | ≦ 1
× 10 ⁻⁶ / ° C., and the low dielectric constant layer has a three-point bending strength of 330 MPa based on JIS1601.
Preferably, the high and low dielectric constant layers are each formed of a glass ceramic material having a three-point bending strength of 170 MPa or more based on JIS1601.

Further, α _LK and α _HK are both 7 × 10 ⁻⁶ /
C. or higher, the coefficient of thermal expansion of the entire multilayer wiring board can be controlled to 7 × 10 ⁻⁶ / ° C. or higher. As a result, the coefficient of thermal expansion with an external circuit board such as a printed circuit board containing an organic resin in an insulating substrate. The difference can be reduced and the mounting reliability can be improved.

Further, since the number of pores having a diameter of 20 μm or more existing in an area corresponding to an area of 100 μm × 100 μm in a cross-sectional mirror photograph of the high dielectric constant layer is five or less, the dielectric strength of the high dielectric constant layer is reduced. Can be increased, especially between high dielectric constant layers? Is preferably 5 MV / m or more.

The high dielectric constant layer desirably contains a titanate-based crystallized glass in order to reduce voids, and further includes at least one selected from the group consisting of alumina, forsterite, and mullite. Is desirably contained as a dispersed phase in order to reduce voids in the high dielectric constant layer.

It is desirable that the low dielectric constant layer contains a diopside crystallized glass, and further that it contains alumina as a disperse phase in order to improve strength, withstand voltage, thermal expansion characteristics and the like as described above. It is desirable to control

According to the above configuration of the present invention, the three-point bending strength of the entire glass-ceramic multilayer wiring board can be increased even if a high-permittivity layer having a low three-point bending strength is provided between the low-permittivity layers. The glass ceramic multilayer, which has been subjected to complex stress concentration during heating by mounting a semiconductor element on one main surface of the glass ceramic multilayer wiring board in advance, thereby preventing the destruction of the substrate and improving the mounting reliability. Even when the wiring board is further mounted on an external circuit board such as a printed board, breakage of the board can be further prevented and reliability can be improved.

Further, by reducing the voids in the high dielectric constant layer, the withstand voltage of the high dielectric constant layer can be increased.

[0016]

FIG. 1 is a schematic sectional view showing an example of a glass ceramic multilayer wiring board according to the present invention.

Glass ceramic multilayer wiring board 1 of the present invention
In the first embodiment, a conductor wiring layer 5 is formed on the surface and / or inside of a laminated substrate 3 formed of a glass ceramic insulating layer, and a via-hole conductor 7 connecting these conductor wiring layers 5 is formed.

The laminated substrate 3 includes a low dielectric constant layer 13 composed of a plurality of glass ceramic insulating layers and a high dielectric constant layer 15 having a higher relative dielectric constant than the low dielectric constant layer 13. At least one inner layer is provided between the dielectric layers 13. The high dielectric constant layer 15 is sandwiched between a pair of electrode layers 5a.

The above-mentioned glass-ceramic multilayer wiring board of the present invention has a three-point bending strength of 3 mm in span having a high strength of 300 MPa or more, particularly 320 MPa or more. Specifically, as shown in FIG. 2, the strength of the evaluation substrate 1 was measured on a flat sample stage 12 having a groove with a span of 3 mm.
0 is placed so as to straddle the groove of the sample table as shown in the figure,
And the crosshead is lowered at a speed of 5 mm / min.
The breaking strength is calculated by the following formula (Formula 1) for calculating the bending strength σb3 based on SR1601. The size of the evaluation substrate was 5 mm × 5 mm × 0.5 mm in thickness.

[Equation 1] σb ₃ [MPa] = (3 × maximum load [kgf] × span [m
m]) / (2 x evaluation board width [mm] x evaluation board thickness [m
m] ² ) × 9.88065 The circuit board of the present invention has a high bending strength as described above, so that an IC element or the like can be mounted on such a board or the organic resin of a multilayer wiring board can be placed in an insulating board. It is possible to increase the durability against the stress generated at the time of mounting on a printed wiring board or the like having high thermal expansion, and to improve the reliability of mounting.

In order to realize such high strength, when the total thickness of the low dielectric layer 13 is t _LK and the total thickness of the high dielectric layer 15 is t _HK , the thickness ratio is t _LK / It is important that t _HK ≧ 3. In particular, the ratio depends on the high dielectric constant layer 1
It is more preferable that the number is 4 or more from the viewpoint of increasing the capacitance and increasing the strength. The thickness ratio is 3
If it is smaller than that, even if the strength of the low dielectric layer 13 is increased, the strength of the entire substrate is reduced due to the low strength of the high dielectric layer 15.

The low dielectric constant layer 1 constituting the laminated substrate 3
As for No. 3, it is desirable that the single-point bending strength measured based on JISR1601 is 330 MPa or more, particularly 350 MPa or more, in order to increase the strength of the whole glass ceramic multilayer wiring board as described above.

Regarding the electrical characteristics, the frequency range 1
The relative dielectric constant at MHz to 3 GHz is 9 or less, the dielectric loss tangent is 50 × 10 ⁻⁴ or less, and the absolute value of the temperature change rate of the relative dielectric constant at −40 to 85 ° C. is 100 × 10 ⁻⁶ / ° C. or less. desirable.

The coefficient of thermal expansion α _LK of the low dielectric constant layer 13 is 7 × 10 ⁻ in the temperature range of 40 ° C. to 400 ° C. because it can reduce the difference in thermal expansion coefficient with an external circuit board such as a printed board. ⁶ / ° C. or more, especially 8 to 15 × 10 ⁻⁶ /
C. is desirable.

Further, it is desirable that the low dielectric constant layer 13 is formed by dispersing alumina and / or spinel in diopside crystallized glass or barium borosilicate glass. In particular, since the low dielectric constant layer 13 is a layer that determines the overall strength of the multilayer wiring board, at least alumina is dispersed using a diopsite-based crystallized glass as a matrix to increase the strength of the multilayer wiring board. It is desirable to contain it as a phase from the viewpoint of increasing the strength.

On the other hand, the high dielectric layer 15 is made of JISR160
3-point bending strength of 170MP alone measured based on 1.
It is desirable that it is not less than a, especially not less than 200 MPa in order to increase the strength of the whole glass-ceramic multilayer wiring board for preventing local strength deterioration of the high dielectric layer 15 sandwiched between the low dielectric layers 13.

Regarding the electrical characteristics, the low dielectric constant layer 1 has a relative dielectric constant of 14 or more in the same frequency range.
This is important for preventing the local strength deterioration of the high dielectric constant layer 15 sandwiched by 3 and has a dielectric loss tangent of 50 × 10 ⁻⁴ or less and a relative dielectric constant of −40 to 85 ° C. It is desirable that the absolute value of the temperature change rate is 100 × 10 ⁻⁶ / ° C. or less.

Further, according to the present invention, the number of pores having a diameter of 20 μm or more in an area corresponding to an area of 100 μm × 100 μm is 5
It is desirable that the number be less than or equal to four, especially less than or equal to four. When the number of pores is more than 5, the withstand voltage between the high dielectric constant layers is lower than 5 MV / m, the insulation is deteriorated, and it is difficult to form a circuit by electrical insulation between the layers.
This is because the function as a wiring board is not performed. In addition, the withstand voltage of the high dielectric constant layer is 5 MV / m.
More preferably, it is 8 MV / m or more, especially 11 MV / m or more. If the number of pores is more than 5, the withstand voltage between the high dielectric layers is lower than 5 MV / m, the insulating property is degraded, it becomes difficult to form a circuit by electrical insulation between the layers, and the function as a wiring board This is because it will not be done.

On the other hand, the high dielectric constant layer 15
Crystallized glass, titanate crystallized glass, or glass
Alumina, spine, and borosilicate glass
Lu, mullite, forsterite
At least one of them is preferably used. In particular,
In terms of high strength, diopside crystallized glass or
In a matrix composed of titanate-based crystallized glass
And SrTiO_{Three ,}La_2Ti _TwoO₇, CaTiO_ThreeSuch as
Those containing a tantalate-based oxide are preferably used.

However, in this system, voids are liable to be generated because the sinterability is reduced. While maintaining moderate strength,
In order to reduce voids, it is desirable to contain at least alumina as a dispersed phase with respect to the titanate-based crystallized glass. In particular, it is desirable to contain an alkaline earth metal selected from the group consisting of Ba, Sr, Ca and Mg as an element constituting the titanate-based crystal phase for increasing the relative dielectric constant.

The three-point bending strength difference (| F _LK -F _HK |) between the low dielectric constant layer 13 and the high dielectric constant layer 15 is due to the stress concentration on the high dielectric constant layer 15 inside the glass ceramic multilayer wiring board. Is desirably 210 MPa or less from the reason that the pressure can be reduced.

The difference between the thermal expansion coefficient α _LK of the low dielectric layer 13 and the thermal expansion coefficient α _HK of the high dielectric layer 15 (| α _LK −α _HK)
|) Is preferably 1 × 10 ⁻⁶ / ° C. or less, more preferably 0.5 × 10 ⁻⁶ / ° C. or less, for the purpose of preventing separation between the low-k layer 13 and the high-k layer 15. , 0.3 ×
It is desirable that it is 10 ^-6 / ° C or less.

The coefficients of thermal expansion α _LK and α _HK of the low dielectric constant layer 13 and the high dielectric constant layer 15 are both 40 ° C. to 400 ° C. because the difference in thermal expansion coefficient with the external circuit board can be reduced.
Is preferably 7 × 10 ⁻⁶ / ° C. or more, and in particular, the coefficient of thermal expansion α _LK of the low dielectric constant layer 13 is
It is preferably 8 to 15 × 10 ⁻⁶ / ° C. at 40 to 400 ° C.

Hereinafter, a method for manufacturing the glass ceramic multilayer wiring board of the present invention will be described.

The low dielectric constant layer and the high dielectric constant layer in the present invention are both formed by molding and firing a mixture of 30 to 95% by mass of a glass powder and 5 to 70% by mass of a filler powder.

According to the present invention, as described above, the low dielectric constant layer 13 is made of, as described above, diopside crystallized glass or barium borosilicate glass and alumina and / or spinel as a filler. Is preferably added and mixed at a ratio of 5 to 70% by mass, particularly 30 to 50% by mass. Particularly, in order to increase the strength, at least alumina is added to the diopsite-based crystallized glass powder. It is desirable to use a composition to which a powder is added from the viewpoint of increasing strength.

On the other hand, the high dielectric constant layer 15 is made of a glass component.
As described above, diopside-based crystallized glass,
Titanate crystallized glass or barium borosilicate
For glass powder, alumina, spinel,
At least one selected from the group of forsterite
A composition obtained by adding and mixing the above powder is suitably used. Special
In terms of high strength, diopside crystallized glass
SrTiO in powder_{Three ,}La _2Ti_TwoO₇, CaTiO_ThreeSuch
What contains a titanate-based oxide powder is preferably used
Can be However, in this system, the sinterability is
Voids are easily generated. While maintaining moderate strength,
To reduce the amount of titanium oxide, use titanate-based crystallized glass powder.
On the other hand, a composition obtained by adding and mixing at least alumina powder
Is desirable. In particular, titanates are used to increase the dielectric constant.
As elements constituting the crystal phase, Ba, Sr, Ca and
Contains alkaline earth metal selected from the group of Mg
Is desirable.

From the viewpoint of increasing the strength of the low dielectric constant layer and the high dielectric constant layer, the content of the filler component is desirably 30% by mass or more and 50% by mass or less.

A slurry is prepared by adding and mixing an appropriate organic binder, a solvent and a plasticizer to each of the composition for a low dielectric constant layer and the composition for a high dielectric constant layer. A green sheet is produced by a coating method such as a blade.

As the conductive wiring layer 5, a metal paste obtained by adding and mixing an appropriate metal powder with an organic binder, a solvent, and a plasticizer is applied on one main surface of the green sheet by a known printing method. To print a predetermined pattern. In some cases, a via hole is formed by punching the green sheet, and a metal paste is filled in the via hole to form a via hole conductor 7.

A plurality of green sheets on which the pattern printing and / or via-hole conductors 7 are formed are laminated and pressed, and then fired. In this case, the low dielectric layer 13
A green sheet serving as the high dielectric layer 15 is interposed between the green sheets serving as the green sheets. In firing, the binder component blended for molding is removed. For example, when copper is used as the metal forming the conductive wiring layer 5, nitrogen containing water vapor at 100 to 800 ° C. is used when copper is used. It takes place in an atmosphere.

The firing is desirably performed at an optimum firing temperature of 800 to 1100 ° C. If the firing temperature is lower than 800 ° C., densification cannot be achieved, and if it is higher than 1100 ° C., simultaneous firing with the metallized wiring layer becomes difficult. However,
When copper is used as a component of the conductor wiring layer 5, 800
It is preferable that the sintering be performed in a non-oxidizing atmosphere at about 1100 ° C.

[0043]

The composition for the low dielectric constant layer was selected from one of diopsite crystallized glass and barium borosilicate glass, and one or two selected from alumina and spinel as ceramic powder. A composition was prepared by mixing these glass powder and ceramic powder.

In the composition for a high dielectric constant layer, one type of glass is selected from diopsite crystallized glass, titanate crystallized glass, and barium borosilicate glass, and ceramic powder (filler, filler) is used. )), Alumina, mullite, forsterite, SrTi
One or two types were selected from O ₃ , CaTiO ₃ , and La ₂ Ti ₂ O ₇ , and a composition was prepared by mixing these glass powders and fillers. Table 1 shows combinations of the glass powder and the ceramic powder.

Then, an organic binder, a solvent, and a plasticizer are added to the composition for a low dielectric constant layer and the composition for a high dielectric constant layer, and the mixture is sufficiently mixed to prepare a slurry. A green sheet was produced.

Next, the obtained green sheets are laminated to form a laminate having a thickness of 4.5 mm.
After debinding treatment in a nitrogen atmosphere containing water vapor, baking was performed in a nitrogen atmosphere at 900 ° C. × 1 hour,
The sample was processed into a sample of 50 mm × 50 mm × 1 mm.

Next, the coefficient of linear thermal expansion at 40 to 400 ° C. and the 2 GHz
Relative dielectric constant at, dielectric loss tangent, and -40 to 85 were measured temperature coefficient tau _epsilon of the dielectric constant at ° C.. Incidentally, as a reference value the relative dielectric constant epsilon ₂₅ at 25 ° C. for the temperature coefficient of the dielectric constant, the dielectric constant epsilon ₈₅ in relative permittivity epsilon _-40 and 85 ° C. at -40 ℃ below the number 2 It was calculated based on: The results are shown in Table 1.

[Expression 2] τ _ε = (ε ₈₅ −ε ₋₄₀ ) / ε ₂₅ / (85 − (− 40)) The three-point bending strength of the low dielectric constant layer and the high dielectric constant layer alone is 50.
A sample having a size of 4 mm x 1 mm was prepared according to JISR160.
1 was evaluated.

Next, a conductor paste containing copper was applied to the surfaces of the green sheets for the low dielectric constant layer and the high dielectric constant layer based on a screen printing method. Further, via holes were formed at predetermined positions of the green sheet, and copper metallized paste was filled therein.

First, the low dielectric constant layer green sheet coated with the metallized paste is positioned between the through holes so that the low dielectric constant layer green sheet has a thickness ratio as shown in Table 2. Then, a green sheet for a high dielectric constant layer was laminated thereon to produce a laminate.

Next, the laminate was debindered in a nitrogen atmosphere containing steam at 750 ° C.
In a nitrogen atmosphere for × 1 hour, the laminated substrate composed of the conductor wiring layer and the glass ceramic insulating layer was simultaneously fired to produce a multilayer wiring substrate.

A test piece of 5 mm × 5 mm × 0.5 mm thickness was prepared from this multilayer wiring board, and the three-point bending strength was measured based on FIG.

Further, 7 mm × 10 mm × 10 mm × 1 mm was formed on the upper surface of the produced glass ceramic multilayer wiring board (10 mm × 10 mm × 1 mm).
After bonding a 7 mm × 0.1 mm Si chip with a resin, a solder ball is formed on a conductive wiring layer formed on the lower surface, and an external circuit board (coefficient of thermal expansion: 18 ×
10 ^-6 / ° C) and a temperature cycle test (-55 (3
0 sec. (Holding) to 125 ° C. (holding for 30 sec.)) Up to 500 cycles, the presence or absence of peeling and cracking of the glass ceramic multilayer wiring substrate and cracking of the solder ball portion was determined.

The cross section of the obtained multilayer wiring board was mirror-polished, and a photograph of the distribution of pores was taken.
20 μm diameter in an area corresponding to an area of 00 μm
The number of pores of m or more was counted.

The breakdown voltage was calculated by measuring the breakdown voltage when a voltage was applied to a pair of electrodes sandwiching the high dielectric constant layer of the multilayer wiring board. In addition, 40 to 4 of the multilayer wiring board
The coefficient of thermal expansion at 00 ° C. was measured.

Further, the presence or absence of deterioration of the insulation resistance between a pair of electrodes sandwiching the high dielectric constant layer of the manufactured low-temperature fired ceramic multilayer wiring board was checked by a high-temperature high-humidity bias test (85 ° C.
(85%, 5.5 V) for 500 hours. Insulation resistance of 10 ⁹ Ω or less was judged as deterioration.

[0057]

[Table 1]

[0058]

[Table 2]

[0059]

[Table 3]

As is clear from the results of Tables 1 to 3, according to the present invention, a low dielectric constant layer having a three-point bending strength of 330 MPa or more and a high dielectric constant layer having a three-point bending strength of 170 MPa or more are combined. And their thickness ratio (t _LK / t _HK ) is 3 or more, and the difference in thermal expansion coefficient (| α _LK −α _HK |) is 1 ×
In the sample set at 10 ⁻⁶ / ° C. or less, the three-point bending strength of the sample manufactured from the glass ceramic multilayer wiring board was 300 MPa.
a, the mechanical strength of the glass-ceramic multilayer wiring board could be improved.

In the mounting test, the coefficient of thermal expansion was 1
It was connected to an external circuit board of 8 × 10 ⁻⁶ / ° C., and there was no peeling or breakage of the glass ceramic multilayer wiring board and no crack in the solder ball portion even in the temperature cycle test of 500 times.

On the other hand, a sample using a low dielectric constant layer having a three-point bending strength of less than 330 MPa or a high dielectric constant layer of less than 170 MPa, or a thickness ratio (t _LK / t) between the low dielectric constant layer and the high dielectric constant layer _HK ) of 2 or less, the three-point bending strength of the multilayer wiring board of 300 MPa or more could not be achieved, and peeling and breaking of the glass ceramic multilayer wiring board and cracking of the solder ball portion were observed in the mounting test.

Further, in a system using titanate crystal glass as the high dielectric constant layer, the high dielectric constant layer having a thickness of 100 μm ×
Diameter 20 in an area corresponding to an area of 100 μm
It was confirmed that the number of pores of μm or more was 5 or less, the withstand voltage between the high dielectric constant layers was 5 MV / m or more, and the insulation resistance after the high temperature and high humidity bias test did not decrease.

On the other hand, when the number of pores is more than 5,
It was confirmed that the withstand voltage between the high dielectric constant layers was degraded to 5 MV / m or less, and the insulation resistance after the high temperature and high humidity bias test was reduced.

[0065]

As described in detail above, according to the present invention,
300 points bending strength of glass ceramic multilayer wiring board is 300
By setting the pressure to not less than MPa, the mounting reliability of the multilayer wiring board can be improved. Further, by appropriately selecting the material and the like of the high dielectric constant layer, it is possible to suppress the decrease in strength and reduce the voids while reducing the voids. The dielectric strength of the rate layer can also be improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view for explaining one embodiment of a glass ceramic multilayer wiring board of the present invention.

FIG. 2 is a view for explaining a method of measuring a three-point bending strength in the glass ceramic multilayer wiring board of the present invention.

[Explanation of symbols]

3 laminated substrate 5 conductor wiring layer 7 Via hole conductor 13 Low dielectric constant layer 15 High dielectric constant layer

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Yoshiyoshi Terashi             Kyocera Corp. 1-4 Yamashita-cho, Kokubu-shi, Kagoshima             Shikisha Research Institute F term (reference) 5E346 AA12 AA13 AA43 CC18 CC32                       DD34 DD45 EE24 FF18 GG04                       GG05 GG06 GG08 GG09 HH08                       HH11

Claims (11)

[Claims] 1. A glass ceramic insulating layer,
The relative dielectric constant between the low dielectric constant layers having a relative dielectric constant of 9 or less in the frequency range of 1 MHz to 3 GHz is 14 or less in the same frequency range.
A conductor wiring layer is provided on the surface and / or inside of the laminated substrate formed by laminating the above high dielectric constant layers, a via hole conductor is provided inside the laminated substrate, and a connection terminal is provided on one surface of the laminated substrate. In the glass-ceramic multilayer wiring board, the three-point bending strength at a span of 3 mm of the multilayer wiring board is 300 MPa or more, and the thickness t _{LK of} the low dielectric constant layer,
A glass ceramic multilayer wiring board, wherein the thickness t _HK of the high dielectric constant layer satisfies the relationship of t _LK / t _HK ≧ 3. 2. The thermal expansion coefficient α _{LK of the} low dielectric constant layer at 40 to 400 ° C. and the thermal expansion coefficient α _{HK of the} high dielectric constant layer are | α _LK −α _HK | ≦ 1 × 10 ^{− 2.} The glass ceramic multilayer wiring board according to claim 1, wherein a relationship of ⁶ / ° C. is satisfied. 3. The glass ceramic multilayer wiring according to claim 1, wherein the low dielectric constant layer is formed of a glass ceramic material having a three-point bending strength of 330 MPa or more based on JIS1601. substrate. 4. The glass ceramic according to claim 1, wherein the high / low dielectric constant layer is formed of a glass ceramic material having a three-point bending strength of 170 MPa or more based on JIS1601. Multilayer wiring board. 5. The glass-ceramic multilayer wiring board according to claim 1, wherein both α _LK and α _HK are at least 7 × 10 ⁻⁶ / ° C. 6. A high-permittivity layer in a cross-sectional mirror photograph of 100
The glass-ceramic multilayer wiring board according to any one of claims 1 to 5, wherein the number of pores having a diameter of 20 µm or more and present in an area corresponding to an area of µm x 100 µm is 5 or less. 7. The glass-ceramic multilayer wiring board according to claim 1, wherein the high dielectric constant layer has a withstand voltage of 5 MV / m or more. 8. The glass ceramic multilayer wiring board according to claim 1, wherein the high dielectric constant layer contains a titanate-based crystallized glass. 9. The glass ceramic according to claim 1, wherein the high dielectric constant layer contains at least one selected from the group consisting of alumina, forsterite and mullite as a dispersed phase. Multilayer wiring board. 10. The glass ceramic multilayer wiring board according to claim 1, wherein the low dielectric constant layer contains a diopside crystallized glass. 11. The glass-ceramic multilayer wiring board according to claim 1, wherein alumina is contained in the low dielectric constant layer as a dispersed phase.