JP2003228082A - Manufacturing method for thin film transistor liquid crystal display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin film transistor liquid crystal display which is equipped with a pixel electrode with a rough surface, has high reflection efficiency to an incident light beam, and can adjust the reflection angle and direction of a reflected light beam. <P>SOLUTION: First microphotoetching (MPE) is carried out for a first metal layer formed on a transparent insulation substrate to form a ridge-shaped block having a gate electrode structure and first and second slanting surface sides, a first insulation layer is formed, and their surfaces are covered; and a pattern of a semiconductor layer is formed on the surface of the first insulation layer to obtain a channel area of a thin film transistor. The surfaces of the semiconductor layer and the first insulation layer are covered with a second insulation layer and a second MPE is carried out to form an etching stopper (ES) on the surface of the semiconductor layer above the gate electrode structure. Further, a second metal layer is formed on the surfaces of the semiconductor layer and the first insulation layer, and a third MPE is carried out to form a source structure and a drain structure on both the sides of the ES. Further, a protection layer is formed and partial areas of the source structure and the drain structure are exposed; and a pixel electrode is formed on the surface of the protection layer and the electrode and the drain structure are electrically concerted to each other. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film transistor liquid crystal display device (TFT-LCD), and more particularly to a slanted diffuse surface.
ser) and a reflective thin film transistor liquid crystal display device having a pixel electrode formed thereon and a reflected layer thereof.
The present invention relates to a manufacturing method of.

[0002]

2. Description of the Related Art Due to rapid progress in manufacturing technology of thin film transistors, liquid crystal display devices have excellent features such as small volume, light weight and low power consumption. Therefore, it is widely and widely used in various electronic products such as a personal digital assist, a notebook type computer, a high quality color television or a mobile phone.

Taking a reflection type liquid crystal display device of the new era as an example, this is to obtain a display effect by utilizing a light source incident from the outside, and a pixel electrode electrically connected to the drain of the thin film transistor. (Pixel ele
ctrode) is made of a metallic material to obtain the required reflection characteristics. Further, when the pixel electrode of this kind is irradiated with light from an external light source, the irradiated light is reflected and a corresponding image is formed on the display through the liquid crystal molecules and the color filter. Since such a liquid crystal display device uses an external light beam as a light source of the liquid crystal display device, it is not necessary to add a backlight in constructing the liquid crystal display device, and further lighter than the conventional liquid crystal display device, It can be said that this is a liquid crystal display device that can achieve a thin structure and can achieve a greater power saving effect.

A technical point to be noted in the above reflection type liquid crystal display device is that a light beam emitted from the outside is used as a light source. That is, how to increase the light reflection efficiency of the pixel electrode is an extremely important point. Therefore, in the conventional reflection type liquid crystal display device, a technique of adjusting the phase of incident light and increasing the reflection efficiency of light rays by providing means such as a polarizing plate is applied.

However, adding means such as a polarizing plate not only increases the number of steps and labor when applied to actual production, but also increases the manufacturing cost.

For this reason, a technique in which a pixel electrode having a rough surface is used as a reflective layer is commonly used. That is, the pixel electrode is a technique for sufficiently utilizing the light incident from the outside due to the diffused characteristic of the rough surface to significantly enhance the reflection efficiency and enhance the brightness of the liquid crystal display device.

FIG. 1 discloses a conventional pixel electrode having a light-scattering property on its surface. According to the drawings, glass substrate (10)
A gate electrode structure (12) is formed on the substrate, and an insulating layer (12) covering the surface of the gate electrode structure (12) is formed. Next, a laminated structure of a semiconductor layer (16), a doping semiconductor layer (18) and a metal layer is formed at a position above the gate electrode structure (12). Amorphous Si may be selected for the semiconductor layer (16). In addition, the drain (21) is formed through a microphotoetching process.
And the source (22) are formed and the structure of the whole thin film transistor is formed, and then the next step is performed separately. That is, a plurality of bumps (26) are formed of a photoresist material in a region where a pixel electrode is formed, a protective layer (28) is formed on the bumps, and a pixel (30) is formed thereon. Therefore, the pixel (30) has a wavy rough surface in which uneven shapes are continuously undulated, and the overall reflection efficiency can be improved.

However, when the bumps (26) are formed of a photoresist material, a photoresist layer is deposited on the surface of the glass substrate (10) for resist coating, and each of them is exposed by microphotoetching. A pattern of bumps (26) is formed, and then steps such as development and baking are performed. That is, an extra step of microphotoetching using a photomask is added, which complicates the manufacturing process of the liquid crystal display device, and adding such a separate manufacturing process means manufacturing the liquid crystal display device. This increases the time required for the process, which leads to a decrease in productivity.

Further, regarding the bump 26 disclosed in FIG. 1, the reflection efficiency of the reflection type thin film transistor liquid crystal display device, that is, the reflection efficiency with respect to the light incident from the external light source can be increased. As a matter of fact, the angle and the range of reflecting the light ray are not properly adjusted or limited. Therefore, the effect of sufficiently increasing the brightness of the screen of the thin film transistor liquid crystal display device cannot be obtained, and when the user views the image reproduced on the screen, it is not possible to provide the ideal brightness.

Therefore, a thin film transistor liquid crystal display device (TFT-LCD) having an image electrode having a rough light-scattering surface under the condition that a photomask and a process related to microphoto technology are not added is provided. Effectively reflects the light coming from the outside, and concentrates the reflected light rays as much as possible within the angle of viewing the screen from the user side, and the reflected light rays are reflected in other unnecessary directions, which is wasted. It is an important issue in designing a reflective thin film transistor liquid crystal display device in the next era whether it can be reduced.

[0011]

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film transistor liquid crystal display which has a pixel electrode having a rough surface, has a high reflection efficiency of a light ray incident from an external light source, and can enhance the brightness of a liquid crystal display device. Device (TFT-L
CD).

Another object of the present invention is a method of manufacturing a pixel electrode having a rough surface of a thin film transistor liquid crystal display device, which has a high reflection effect and can adjust a reflection angle and a range of a reflection direction of a reflected light beam. Thus, another object of the present invention is to provide a manufacturing method that does not increase the number of steps involved in microphotographing.

[Means for Solving the Problems]

Therefore, the present inventor has conducted extensive studies in view of the drawbacks of the prior art, and has a gate electrode structure on a transparent insulating substrate and a first metal layer having a ridge-shaped block formed thereon,
A first insulating layer having a first inclined surface along the first inclined side of the ridge-like block and a second inclined surface along the second inclined side, a semiconductor layer, and an etching stopper (Etching). Focusing on the fact that a structure formed by stacking a second insulating layer forming a stopper), a second metal layer forming a source structure and a drain structure, a protective layer, and a pixel electrode can solve the above problems, The present invention has been completed from the viewpoint.

That is, according to the first invention of the present application, a first metal layer is formed on a transparent insulating substrate, and a first microphotoetching is performed on the first metal layer to form a gate electrode structure.
A ridge-shaped block having a first slope side and a second slope side is formed. Further, an insulating layer is formed to cover the gate electrode structure, the ridge block, and the surface of the transparent insulating substrate,
A semiconductor layer is formed on the surface of the first insulating layer, a second insulating layer is formed to form a second insulating layer that covers the surfaces of the semiconductor layer and the first insulating layer, and the second insulating layer is formed. Then, a second microphotoetching process is performed to form an etching stopper (Etching Sto) on the surface of the semiconductor layer above the gate electrode structure.
form a pper). Then, a second metal layer is formed, and a third microphotoetching is performed on the second metal layer to form a source structure and a drain structure on both sides of the etching stopper. Further, by forming a protective layer and a pixel electrode to form a thin film transistor liquid crystal display device, the problems of the present invention can be solved.

Thus, according to the first aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device (TFT-LCD) in which a pixel electrode having an inclined light diffusing surface is formed on a transparent insulating substrate. Forming a gate electrode structure by forming a first metal layer and performing a first microphotoetching on the first metal layer;
A step of forming a ridge-shaped block formed in a region corresponding to an image display region where a pixel electrode is formed and having a first inclined side and a second inclined side, a gate electrode structure, and a ridge-shaped block A first insulation that covers the surface of the transparent insulating substrate and exhibits a first inclined surface along the first inclined side of the ridge block and a second inclined surface along the second inclined side. Forming a layer, forming a pattern of a semiconductor layer on the surface of the first insulating layer to form a channel area of a thin film transistor, and forming a second insulating layer covering the surface of the semiconductor layer and the first insulating layer. And second microphotoetching the second insulating layer,
Forming an etching stopper on the surface of the semiconductor layer above the gate electrode structure; forming a second metal layer on the surface of the etching stopper and the semiconductor layer and the first insulating layer; A step of performing a third microphotoetching on the two-metal layer to form a source structure and a drain structure on both sides of the etching stopper; and further forming a protective layer and a part of the source structure and the drain structure. A pixel having an inclined light-scattering surface, comprising: a step of exposing a region; and a step of forming a pixel electrode on the surface of the protective layer and electrically connecting the pixel electrode and the drain structure. A method for manufacturing a thin film transistor liquid crystal display device having electrodes is provided.

According to a second aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device (TFT-LCD) in which a pixel electrode having an inclined light-spreading surface is formed on a transparent insulating substrate, wherein A first metal layer is formed, and first microphotoetching is performed on the first metal layer to form a gate electrode structure and a region corresponding to an image display region for forming a pixel electrode, and the first inclined side Side and second
A step of forming a ridge-shaped block having an inclined surface side,
The gate electrode structure, the ridge-shaped block, and the surface of the transparent insulating substrate are covered, and the first sloping surface is provided along the first sloping side of the ridge-shaped block, and along the second sloping side. Forming a first insulating layer exhibiting a second inclined surface, a gate electrode insulating layer and a semiconductor layer are sequentially formed on the first insulating layer, and the second insulating layer is provided with the semiconductor layer and the first insulating layer. A step of forming on the surface of the layer, a step of performing a second microphotoetching on the second insulating layer to form an etching stopper above the gate electrode structure, and a transparent insulation between the silicon layer and the second metal layer. Forming a source structure and a drain structure on both sides of the etching stopper by performing third microphotoetching on the second metal layer, and forming a protective layer; , Or A step of exposing a partial region of the source structure and the drain structure, and a step of forming a pixel electrode on the surface of the protective layer and electrically connecting the pixel electrode and the drain structure. Provided is a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having a characteristic inclined light diffusing surface.

Further, according to the third invention, in a method of manufacturing a thin film transistor liquid crystal display device (TFT-LCD) in which a pixel electrode having an inclined light-scattering surface is formed on a transparent insulating substrate, the first metal is formed on the transparent insulating substrate. Forming a layer, the first
First micro-photo etching is performed on the metal layer to form a source structure, a drain structure, and a region corresponding to an image display region in which a pixel electrode is formed, and the first inclined side and the second inclined surface side. Forming a ridge-shaped block having sides, forming the source structure, the drain structure, the ridge-shaped block, and a covering semiconductor layer covering the surface of the transparent insulating substrate; and an insulating layer on the semiconductor layer. Forming a second metal layer on the insulating layer, and performing a second microphotoetching on the second metal layer, the insulating layer, and the semiconductor layer to form the gate electrode structure. Pattern is formed, and a partial semiconductor layer below the gate electrode structure is used as a channel area of a thin film transistor, and a protective layer is further formed, and one of the source structure and the drain structure is formed. A pixel having an inclined light-scattering surface, comprising: a step of exposing a region; and a step of forming a pixel electrode on the surface of the protective layer and electrically connecting the pixel electrode and the drain structure. A method for manufacturing a thin film transistor liquid crystal display device having electrodes is provided.

The present invention will be described in detail below. Claim 1
Thin film transistor liquid crystal display device (TFT-L
CD) is a method for manufacturing a thin film transistor liquid crystal display device, in which a pixel electrode having an inclined light diffusion surface is formed on a transparent insulating substrate, wherein a first metal layer is formed on the transparent insulating substrate. A first micro-photoetching is performed on the gate electrode structure to form a gate electrode structure, and the pixel electrode is formed in a region corresponding to an image display region, and the first inclined side and the second inclined surface side are formed. A step of forming a ridge-like block having sides, covering the surface of the gate electrode structure, the ridge-like block, and the transparent insulating substrate, and a first sloping surface along the first sloping side of the ridge-like block. And forming a semiconductor layer pattern on the surface of the first insulating layer, and forming a first insulating layer having a second inclined surface along the second inclined side. And a second insulating layer that covers the surfaces of the semiconductor layer and the first insulating layer, and second microphotoetching is performed on the second insulating layer so that the gate electrode structure is formed above the gate electrode structure. Forming an etching stopper (Etching Stopper) on the surface of the semiconductor layer, forming a second metal layer on the surface of the etching stopper, the semiconductor layer and the first insulating layer, and Third micro photoetching to form a source structure and a drain structure on both sides of the etching stopper, and a step of further forming a protective layer and exposing a partial region of the source structure and the drain structure. And forming a pixel electrode on the surface of the protective layer and electrically connecting the pixel electrode and the drain structure.

According to a second aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusion surface, wherein the first metal layer is deposited in the first microphotoetching step of the first aspect. After filming
Further, a photoresist material is applied to the surface of the first metal layer, and a half-tone photomask is used, a slit photomask is used, or multiple exposures are performed by a microphotograph process. After patterning the material and exposing and developing the photoresist material, the pattern comprises a gate pole photoresist block and a ridge pattern block.

According to a third aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein when the second microphoto etching is performed on the second insulating layer in the first aspect, At the same time that the etching stopper is formed by the second insulating layer, a plurality of insulating bumps that are formed by the second insulating layer and that are distributed on the first inclined surface of the ridge-shaped block are simultaneously formed.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein a plurality of insulating bumps according to the third aspect are formed on a first inclined surface of a ridge block. When a third microphotoetching is performed on the second metal layer to form a source structure and a drain structure, the second metal layer is simultaneously arranged to intersect with the plurality of insulating bumps.
Form a plurality of metal bumps distributed on the inclined surface.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface, wherein the plurality of metal bumps in the fourth aspect have two individual metal bumps. It is formed between blocks and is formed adjacent to the insulating block.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface, wherein a plurality of insulating bumps on the first insulating layer are the same as the first inclined surface. , And the second inclined surface are formed so as to be uniformly distributed.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein a plurality of insulating bumps according to the sixth aspect are provided on the first inclined surface of the ridge block and the second inclined surface. When the third microphotoetching is performed on the second metal layer to form the source structure and the drain structure after forming on any of the slopes, the second metal layer simultaneously intersects with the plurality of insulating bumps. Forming a plurality of metal bumps that are arranged in an array and are distributed on both the first inclined surface and the second inclined surface.

In a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface according to claim 8, the first metal layer and the second metal in claim 1 are aluminum, titanium, chromium, tungsten or Selected from tantalum.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface, wherein the first metal layer and the second metal in the first aspect are aluminum, titanium, chromium, tungsten or At least two or more alloys arbitrarily selected from tantalum.

According to a tenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusion surface, which comprises forming a pixel electrode having an inclined light diffusion surface on a transparent insulating substrate. And forming a first metal layer on the transparent insulating substrate and performing a first microphotoetching on the first metal layer to correspond to a gate electrode structure and an image display region where a pixel electrode is formed. A step of forming a ridge-shaped block formed in the region and having a first inclined side and a second inclined surface side, covering the gate electrode structure, the ridge-shaped block, and the surface of the transparent insulating substrate, and Forming a first insulating layer having a first sloped surface along a first sloped side of the ridge-like block and a second sloped surface along a second sloped side; Forming a gate electrode insulating layer and the semiconductor layer are sequentially on the edge layer, and a second insulating layer the semiconductor layer and the first
A step of forming on the surface of the insulating layer, a step of performing a second microphotoetching on the second insulating layer to form an etching stopper above the gate electrode structure, and a transparent silicon layer and a second metal layer. Forming a source structure and a drain structure on both sides of the etching stopper by performing third micro-photoetching on the second metal layer, and forming a protective layer; And exposing a partial region of the source structure and the drain structure, and forming a pixel electrode on the surface of the protective layer and electrically connecting the pixel electrode and the drain structure. Including.

In a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface according to an eleventh aspect, the first microphotoetching step in the tenth aspect is performed by depositing the first metal layer. After film formation, a photoresist material is applied to the surface of the first metal layer, and a half photo mask is used, a slit photo mask is used, or a microphoto step selected from multiple exposure is used. A step of forming a pattern on the photoresist material and exposing the photoresist material to develop the pattern so as to include a gate electrode photoresist block and a ridge-shaped pattern block.

According to a twelfth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-spreading surface, wherein the third metal layer is third to the second metal layer.
In the case of performing the microphotoetching, the plurality of metal bumps made of the second metal layer are formed on the surface of the first insulating layer.

According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein metal bumps according to the twelfth aspect are distributed on the first inclined surface at a predetermined interval. To do.

According to a fourteenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein the first metal layer and the second metal in the tenth aspect are aluminum, titanium, chromium, tungsten or Selected from tantalum.

According to a fifteenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein the first metal layer and the second metal in the tenth aspect are aluminum, titanium, chromium, tungsten or It is an alloy of at least two or more arbitrarily selected from tantalum.

According to a sixteenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusion surface, wherein the pixel electrode having the inclined light diffusion surface is formed on a transparent insulating substrate. An image display area in which a first metal layer is formed on the transparent insulating substrate and a first microphotoetching is performed on the first metal layer to form a source structure, a drain structure, and a pixel electrode. Is formed in a region corresponding to
A step of forming a ridge-shaped block having an inclined side and a second inclined surface-side, a step of forming the source structure, a drain structure, a ridge-shaped block, and a covering semiconductor layer for covering the surface of the transparent insulating substrate. A step of forming an insulating layer on the semiconductor layer, a step of forming a second metal layer on the insulating layer,
Second microphotoetching is performed on the second metal layer, the insulating layer, and the semiconductor layer to form a pattern of the gate electrode structure, and a part of the semiconductor layer below the gate electrode structure is used as a channel of a thin film transistor. An area, a step of further forming a protective layer and exposing a partial region of the source structure and the drain structure, a pixel electrode is formed on the surface of the protective layer, and the pixel electrode and the drain are formed. Electrically connecting to the structure.

According to a seventeenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light scattering surface, wherein the first microphotoetching step of the sixteenth aspect is performed by depositing the first metal layer. After film formation, a photoresist material is applied to the surface of the first metal layer, and a microphoto step selected from a method of using a halftone photomask, a slit photomask, or multiple exposure. Is a step of forming a pattern on the photoresist material by means of which the pattern after exposing and developing the photoresist material includes a gate pole photoresist block and a ridge pattern block.

According to a eighteenth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-spreading surface, wherein when the second micro photoetching according to the sixteenth aspect is performed, the second metal layer and A plurality of bumps including an insulating layer and a semiconductor layer are formed by depositing on the surface of the ridge block.

According to a nineteenth aspect of the present invention, in the method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface, when the second microphotoetching according to the sixteenth aspect is performed, the second metal layer is formed at the same time. A plurality of metal bumps are formed on the surface of the ridge block.

According to a twentieth aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusion surface, wherein a plurality of semiconductor layers are simultaneously formed when the second microphotoetching according to the sixteenth aspect is performed. Semiconductor bumps are formed on the surface of the ridge block.

According to a twenty-first aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface, wherein the first metal layer and the second metal in the sixteenth aspect are aluminum, titanium, chromium, tungsten or Selected from tantalum.

According to a twenty-second aspect of the present invention, there is provided a method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface, wherein the first metal layer and the second metal in the sixteenth aspect are aluminum, titanium, chromium and tungsten. Alternatively, at least two or more alloys arbitrarily selected from tantalum.

[0040]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention relates to a thin film liquid crystal display device having a pixel electrode having an inclined light diffusing surface and a manufacturing method thereof, and in forming a pattern of each layer constituting a thin film transistor, a region for forming a pixel electrode. A ridge-shaped bump is formed on the ridge to adjust the reflection angle of light incident from an external light source. In addition, insulating bumps densely distributed on the surface of the ridge-shaped bumps and metal bumps are formed to improve the reflection efficiency of incident light rays. Therefore, for example, when depositing a protective layer, a pixel electrode layer, or the like in a subsequent step, a light-scattering surface having a concavo-convex structure that is deposited along the undulations of the surface of these blocks and is necessary for designing a reflective liquid crystal display device is formed. Form. In order to explain the structure and characteristics of such a reflective thin film transistor liquid crystal display device, specific examples will be given and described in detail below with reference to the drawings.

[0041]

Example 1 A first metal layer (52) is formed on a transparent insulating substrate (50) as disclosed in FIG. As the transparent insulating substrate (50), for example, glass, quartz, or other transparent insulating material having transparency is used. In the step of forming the first metal layer (52), a metal film is formed on the surface of the transparent insulating substrate (50) by a physical vapor deposition (PVD) step such as sputtering. The first metal layer (52) is selected from aluminum, titanium, chromium, tungsten or tantalum. Alternatively, it may be an alloy of at least two metals arbitrarily selected from these metals.

Next, a gate electrode structure (56) and a ridge block (58) are formed by a first microphotoetching process. Preferably, a photoresist material is first applied to the surface of the first metal layer (52), and the photoresist block (54) (5) is subjected to steps such as exposure and development.
5) is formed on the first metal layer (52). The photoresist block (54) formed here is for forming a pattern structure of the gate electrode, and the photoresist block (55) has a ridge-like structure having inclined sides, and is formed by a subsequent etching process. It is for forming a ridge-shaped metal block (58). That is,
Using the photoresist blocks (54) and (55) as an etching mask, the first metal layer (52) is subjected to, for example, a first microphotoetching process by dry etching such as ion reaction etching (RIE) to obtain a transparent insulating substrate. A gate electrode structure (56) and a plurality of ridge blocks (58) are simultaneously formed on (50).

Preferably, a halftone photomask or a slit photomask is used, or a method of exposing a plurality of times is used to form a photoresist in an inclined block, and further dry etching is performed to form a lower metal structure. The photoresist block (55) for forming the ridge-shaped block (58) formed here is formed at a position corresponding to the display area of the screen. That is, the ridge-shaped block 58 is formed at a position corresponding to the region (A) where the pixel electrode is formed in the subsequent process. Each ridge block (58) has a long sloping side (58a) and a short sloping side (58b). As will be understood by those skilled in the art, in the first microphotoetching process for forming the gate electrode structure (56), a capacitor electrode, a scanning line structure (not shown) or the like is usually formed on the surface of the transparent insulating substrate (50). Is formed.

Excess photoresist block (54)
After removing (55), a gate electrode structure (56), a ridge block (58) and a first insulating layer (60) are deposited on the surface of the transparent insulating substrate (50) as disclosed in FIG. To form a film. The first insulating layer (60) forms a long sloping surface (60a) along the long sloping side (58a) of the ridge block (58) and a short sloping surface (60b) along the short sloping side (58b). To form. Preferably, the first insulating layer (60) is silicon oxide (SiO ₂ ), silicon nitride (SiN _x ).
Alternatively, it is made of a suitable insulating material such as silicon oxynitride (SiON), and the first insulating layer (60) is formed by depositing a silicon nitride material by, for example, low temperature chemical vapor deposition (CVD).

Next, as disclosed in FIG. 4, after depositing and forming a first insulating layer (60), a gate electrode insulating layer (62) and a semiconductor layer (64) are formed above the gate electrode structure (56). Pattern is formed. That is, the first insulating layer (6
0) on the surface of the gate electrode insulating layer (62) and the semiconductor layer (6).
4) are sequentially deposited, and a desired pattern is formed above the gate electrode structure 56 by an etching process to form a channel of a thin film transistor (TFT) device formed by a subsequent process. Further, the semiconductor layer (64) and the gate electrode insulating layer (62) in the other portions are removed to expose the surface of the first insulating layer (60). Generally, the gate electrode insulating layer (62) is formed by selecting an insulating material such as silicon oxynitride. The semiconductor layer (64) is made of an amorphous silicon material or the like. Then, a second insulating layer (66) is formed,
The surfaces of the semiconductor layer (64) and the first insulating layer (60) are covered.

Next, the second insulating layer (66) shown in FIG. 4 is subjected to a microphotoetching process, and as shown in FIG. 5, the semiconductor layer (6) above the gate electrode structure (56).
Etching Stoppe (Etching Stoppe) on the surface of 4)
r) forms (67). Then, a doping silicon layer (68) and a second metal layer (70) are formed on the etching stopper (67) and the semiconductor layer (6).
4) and on the surface of the first insulating layer (60).

Next, as shown in FIG. 6, a microphotoetching process is performed on the second metal layer (70) and the doping silicon layer (68), and both sides of the etching stopper (67) are etched. A source structure (72) on the surface of the semiconductor layer (64) located at
And a drain structure (74) are formed. The action of the Etching Stopper (67) acts on the semiconductor layer (64) used as a channel below the microphotoetching process for forming the source structure (72) and the drain structure (74). To prevent injuries. After forming the source structure (72) and the drain structure (74), a protective layer (76) is further formed on the transparent insulating substrate (50). Then, the partial surfaces of the source structure (72) and the drain structure (74) are exposed by etching. That is, in the subsequent step, a metal contact hole for making an electrical connection is formed. Preferably, the protective layer (76) is formed of a silicon nitride material.

In the process disclosed in FIG. 7, a pixel electrode (78) electrically connected to the drain structure (74) is formed on the surface of the protective layer (76). In the reflection type thin film transistor liquid crystal display device, the pixel electrode (78)
Also has a function as a reflective layer. Therefore, as the material, a metal material having a preferable reflection characteristic is selected.
Aluminum material is preferably selected.

Here, it should be noted that, in the first microphotoetching process for forming the gate electrode structure (56), a region for forming the pixel electrode (78) other than the gate electrode structure (56) is formed. The point is to form a plurality of ridge blocks (58) at the same time. Therefore, for example, the first insulating layer (60) which is deposited and formed in the subsequent process is formed.
Etc. deposit each layer along the shape of the ridge block (58), forming a similar contour. It thus comprises a long sloping surface (60a) and a short sloping surface (60b).
The subsequently formed protective layer (76) also has opposing undulating surfaces. Therefore, the pixel electrode (78) formed is undulated along the surface of the protective layer (76) to form a rough light-scattering surface that meets design requirements.

Embodiment 2 FIG. 8 discloses Embodiment 2 of the present invention. Example 2 is almost the same as the manufacturing method according to Example 1 described above. First, a first metal layer is formed on a transparent insulating substrate (50), a first microphotoetching process is performed on the first metal layer, and a gate electrode structure (5) is formed on the transparent insulating substrate (50).
6) to form a ridge block (58). The position where the ridge-shaped block (58) is formed is in the region (A) where the pixel electrode is formed by the subsequent process as in the first embodiment. Then, a second insulating layer (66) is formed to cover the surfaces of the semiconductor layer (64) and the first insulating layer (60).

Next, as shown in FIG. 9, a microphotoetching process is performed on the second insulating layer (66) to form an etching stopper (67) above the gate electrode structure (56). Simultaneously with the formation, a plurality of insulating bumps (69) are formed on the surface of the first insulating layer (60) above the plurality of ridge blocks (58). The insulating bump (69) is formed in a pillar shape, and has a first shape.
It is formed so as to be distributed at a predetermined interval along the long inclined surface (60a) of the insulating layer (60). As a matter of course, the insulating bumps (69) may be formed on the short sloping surface (60) of the first insulating layer (60) in consideration of manufacturing process requirements or related matters.
It may be distributed in b). Also a long sloped surface (60a)
And a short sloped surface (60b). Further, the shape, size, spacing, etc. of the insulating bumps (69) can be changed according to actual needs.

Then, after forming a pattern of the second insulating layer (66) as disclosed in FIG. 10, a doping silicon layer (68) is formed on the transparent insulating substrate (50) as disclosed in Example 1. A second metal layer (70) is sequentially deposited and formed, and a microphotoetching process is further performed to etch the etching stopper (6).
A source structure (72) and a drain structure (74) are formed on both sides of 7). Next, a protective layer (76) is formed on the surface of the thin film transistor and the insulating bump (69).
And proceed with the process of micro photo etching,
Partial surfaces of the source structure (72) and the drain structure (74) are exposed. Next, the pixel electrode (78) is replaced with the protective layer (7
6) formed on the surface and electrically connected to the drain structure (74). Therefore, the etching stopper (Etching Sto
In the microphotoetching process for forming the pper) (67), the long inclined surface (60) of the first insulating layer (60) is formed.
a) A plurality of insulating bumps (69) are simultaneously formed on top.
Therefore, the insulating bump (69) and the protective layer (76) formed by depositing on the surface of the first insulating layer (60) also have corresponding undulating surfaces. Further, the pixel electrode 78 formed in the subsequent process is also formed along the undulations of the surface of the protective layer 76, so that the pixel electrode 78 having a rough light-scattering surface is formed.

As disclosed in FIG. 10, the pixel electrode (7
8) not only the undulations are formed corresponding to the shape of the ridge block (58) therebelow, but also the long and short inclined surfaces (6
0a) and (60b), and insulation bumps (69)
Also supports ups and downs. Therefore, a rough surface is formed in which irregularities are more densely formed.

Embodiment 3 FIG. 11 discloses Embodiment 3 of the present invention. The third embodiment is almost the same as the first embodiment. First, a first metal layer (52) is formed on a transparent insulating substrate (50), and the first metal layer (52) is formed.
A first microphotoetching process is performed on the gate electrode structure (56) on the transparent insulating substrate (50).
And a ridge block (58) are formed simultaneously. A first insulating layer (60) is formed on the transparent insulating substrate (50), and a second insulating layer (66) is formed on the semiconductor layer (64) and the first insulating layer (60).
Formed on the surface of.

Next, a microphotoetching process is performed on the second insulating layer (66), and an etching stopper (Etching S) is formed above the gate electrode structure (56).
topper) (67). Then, the doped silicon layer (68) and the second metal layer (70) are combined with the transparent insulating substrate (5).
0) are sequentially deposited and formed, and a microphotoetching process is separately performed to form a source structure (72) and a drain structure (74) on both sides of the etching stopper (67). To do.
In addition, a plurality of metal bumps (71) are connected to the ridge block (5
8) Formed on the surface of the first insulating layer (60). The plurality of metal bumps (71) are formed so as to be distributed at a predetermined interval along the long inclined surface (60a) of the first insulating layer (60). As a matter of course, the metal bump (7
1) may be distributed on the short sloping surface (60b) of the insulating layer (60). Further, it may be distributed on either the long inclined surface (60a) or the short inclined surface (60b). Further, the shape, size, interval, etc. of the metal bumps (71) can be changed according to actual needs.

Next, after forming a pattern of the protective layer (76) on the thin film transistor and the metal bump (71), a pixel electrode (78) is formed on the surface of the protective layer (76) to electrically connect with the drain structure (74). Connect to. In this case, since a plurality of metal bumps (71) are formed on the long inclined surface (60a) of the first insulating layer (60), the metal bumps (71) and the surfaces of the first insulating layer (60) may be deposited. The protective layer (76) formed will likewise have a corresponding undulating surface. Further, as shown in the drawing, the pixel electrode (78) also undulates corresponding to the shape of the ridge-shaped block (58), but also undulates along the metal block (71) and further has a rough light-scattering surface in which irregularities are dense. Forming a pixel electrode (78) having

Embodiment 4 FIG. 12 discloses Embodiment 4 of the present invention. In Example 4, a point to be noted is that an etching stopper (Etchin) is formed above the gate electrode structure (56) when a microphotoetching process is performed on the second insulating layer (66).
In addition to forming the g Stopper) (67), the above-mentioned plurality of insulating bumps (69) are formed on the long inclined surface (60a). Also, in the subsequent microphotoetching process, the source structure (72) and the drain structure (7) are formed.
In addition to forming 4), a plurality of metal bumps (71) are simultaneously formed on the long inclined surface (60a). The metal bumps (71) and the insulating bumps (69) are arranged to intersect with each other and are distributed on the surface of the first insulating layer (60). Each of the metal bumps (71) has an insulating bump (69) at the left and right adjacent positions, and each of the insulating bumps (69) has a metal bump (71) at the left and right adjacent positions. Similarly, the insulating bumps (69) and the metal bumps (71) may be distributed on the short inclined surface (60b) of the first insulating layer (60). Further, it may be distributed on either the long inclined surface (60a) or the short inclined surface (60b). In addition, the insulating bump (69) and the metal bump (7
The shape, size, interval, etc. of 1) can be changed based on actual needs. Therefore, the insulating bumps (69) and the metal bumps (71) are densely formed on the long inclined surface (60a). Therefore, the protective layer (7
The pixel electrode (7) formed after the pattern of (6) is formed.
8) will have a very rough diffuse surface.

Here, it is necessary to particularly explain that
In each of the above embodiments, the etching stopper is applied to the formation of the thin film transistor element,
The features and spirits of the present invention can be applied to manufacturing processes that include back channel etching. That is, as disclosed in FIG. 13, the method of the above-described embodiment is applied to form a gate electrode structure (56) and a ridge block (58), and a first insulating layer (60).
The gate electrode structure (56) and the ridge block (5
8) and then a pattern of the gate electrode insulating layer (62) and the semiconductor layer (64) is formed on the gate electrode structure (56) by a deposition and etching process. In such a step, the doped silicon layer (68) and the semiconductor layer (64) are formed on the surface of the first insulating layer (60) without forming the etching stopper (67).

Then, the second metal layer (70) and the doped silicon layer (68) are subjected to microphotoetching by the back irradiation method of back channel etching, and the source structure (on the semiconductor layer (64) ( 7
2) and the drain structure (74) are formed respectively. Next, a protective layer (76) is formed on the transparent insulating substrate (50) by deposition, each layer including the above-mentioned respective structural portions is uniformly covered, and a contact hole is formed in the protective layer by etching to form a source structure. Partial surfaces of (72) and the drain structure (74) are exposed to be used for electrical connection in the subsequent process. Next, a pixel electrode (78) is formed on the surface of the protective layer (76) to form a drain electrode structure (7
4) Electrically connect with.

As a matter of course, as disclosed in FIG. 15, in order to enhance the light scattering effect, the above-mentioned source structure (7
2) and the microphotoetching process for forming the drain structure (74), a plurality of metal bumps (71) are simultaneously formed on the ridge block (58) on the first insulating layer (6).
Formed on the surface of 0). These metal bumps (7
1) has a columnar shape and is formed so as to be distributed at a predetermined interval along the long inclined surface (60a) of the first insulating layer (60). Similarly, the metal bump (71) is connected to the insulating layer (6).
It may be distributed on a short inclined surface (60b) of 0). Further, it may be distributed on either the long inclined surface (60a) or the short inclined surface (60b). Also, metal bumps (71)
Any of the shapes, sizes, intervals, etc. of can be changed according to actual needs.

Further, the features of the present invention can be applied to the related manufacturing process in the top gate type. That is,
As shown in FIG. 18, after depositing and forming the layers in the above-described embodiment, microphotoetching is performed to form a second metal layer (112), an insulating layer (110), and a second metal layer (112) shown in FIG.
The amorphous silicon layer (108) is applied in this order to form a pattern of the gate electrode structure (113), the gate electrode insulating layer (11) and the transistor channel (109) on the gate structure (10).
2) and on the drain structure (104). Then, a thick protective layer (114) is applied to the transparent insulating substrate (100).
It is formed on the gate electrode structure (113), the gate electrode insulating layer (11), the transistor channel (109) and the ridge block (106) sufficiently. Similarly, etching is performed on the protective layer (114) to form a plurality of contact holes to form a gate electrode structure (11).
3), the source structure (111) and the drain structure (10)
Part of 4) is exposed and subjected to the subsequent electrical connection process. Then, on the surface of the protective layer (114), the pixel electrode (1
16) is formed and connected to the drain structure (104) through the corresponding contact hole. In this case, in the first microphotoetching step, the source structure (111) and the drain structure (104) are formed, and a plurality of ridge blocks (106) are formed in the region corresponding to the pixel electrode (116). . Therefore, the protective layer (114) and the pixel electrode (1) deposited and formed in the subsequent process are
16) is formed along the surface of the ridge block (106) and has a ridge-like appearance as in the above-mentioned embodiment. Thus, the pixel electrode (116) will have a rough light-scattering surface that meets design requirements and can be used as a reflective layer.

Similarly, in order to enhance the light scattering effect, the gate electrode structure (113) and the source structure (111) described above are used.
And a plurality of bumps in the ridge block (10) in an etching process for forming a drain structure (104).
Formed on the surface of 6). The bump has a second metal layer (11
2), insulating layer (110) or amorphous silicon layer (108)
Alternatively, any combination of these may be deposited and formed on the ridge block (106). For example, in the step of etching the amorphous silicon layer (108) to form the transistor channel (109), a plurality of semiconductor blocks formed by the amorphous silicon layer (108) are simultaneously formed into long ridge blocks (106). Inclined surface (1
06a) or on a short sloping surface (106b). Alternatively, the transistor channel (109) and the gate electrode insulating layer (11) are first formed, and then the second metal layer is formed, and the gate electrode insulating layer (11) is formed by microphotoetching.
Simultaneously with forming the gate electrode structure (113) thereon, a plurality of metal bumps are formed on the ridge block (106).

The above are preferred specific examples of the present invention, and do not limit the scope of the present invention.
Therefore, any modifications or changes that can be made by those skilled in the art, which have the same technical idea as the present invention and have an equivalent effect on the present invention, are included in the claims of the present invention. It is a thing.

[0064]

The thin film transistor liquid crystal display device (TFT-LCD) manufactured by the method according to the present invention has many advantages. First, in the step of forming a photoresist block having an inclined side surface and etching the first metal layer, the shape of the ridge block formed is completely based on the shape of the photoresist. For this reason, the plurality of ridge-shaped blocks that are formed can achieve the purpose of reflecting most of the incident light at a specific effective angle in which the long inclined surfaces are all at the same angle. Therefore, the brightness of the thin film transistor liquid crystal display device (TFT-LCD) can be further increased.

Further, in the present invention, in the step of etching the second insulating layer and the second metal layer, the insulating bump and the metal bump are formed on the long inclined surface.
For this reason, the pixel electrodes have a light-scattering surface having a concavo-convex structure due to the densely arranged convex structure, which effectively reflects the incident light from the external light source and sufficiently utilizes the reflected light. Obtainable. Further, it should be noted that whether it is a ridge block, an insulating bump, or a metal bump, both are formed by utilizing microphotoetching performed in the manufacturing process. Therefore, according to the manufacturing method of the present invention, it is not necessary to additionally add a step such as a photomask and baking.

In other words, according to the manufacturing method of the present invention, the utilization efficiency with respect to the incident light from the external light source can be improved. Also, most of the reflected light can be reflected within the range of the viewing angle of the user's display by using the long inclined surface, and the brightness of the thin film transistor liquid crystal display device (TFT-LCD) can be further enhanced. Further, since no additional manufacturing process is added in the manufacturing process, when forming the pixel electrode having the light-scattering surface according to the present invention, the production capacity of the entire manufacturing process can be maintained.

Further, the ridge-shaped blocks, the insulating bumps or the metal bumps in the present invention can be arbitrarily deposited or changed in size, shape, or interval according to actual needs. Degree of uneven structure on the surface,
The angle of reflection of the reflected ray can be controlled and adjusted.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a conventional thin film transistor liquid crystal display device having a rough reflective surface formed on a transparent insulating substrate.

FIG. 2 is a cross-sectional view showing a state in which a first metal layer is formed on a transparent insulating substrate and a photoresist block is formed in the thin film transistor liquid crystal display device of the invention.

FIG. 3 is a cross-sectional view showing a state in which a gate electrode structure and a ridge block are formed by performing a first microphotoetching process on the first metal layer of FIG. 2, and a first insulating layer is formed and covered. .

4 is a cross-sectional view showing a state in which a semiconductor layer pattern is formed on the surface of the first insulating layer of FIG. 3 and a second insulating layer is formed and covered.

5 is a cross-sectional view showing a state in which an etching stopper is formed by the second insulating layer of FIG. 4 and a second metal layer is formed.

6 is a cross-sectional view showing a state where a source structure and a drain structure are formed by the second metal layer of FIG.

FIG. 7 is a cross-sectional view showing a state in which the source structure and the drain structure of FIG. 6 are covered with a protective layer to form a pixel electrode.

FIG. 8 is a cross-sectional view showing a state where a gate electrode structure and a ridge block are formed on a transparent insulating substrate by a first metal layer and are covered with the first insulating layer in Example 2.

9 is a cross-sectional view showing a state in which a gate electrode insulating layer, a semiconductor layer, an etching stopper, and an insulating bump are formed on the first insulating layer of FIG.

10 is a cross-sectional view showing a state in which a source structure and a drain structure are further formed from the state of FIG. 9, and a protective layer and a pixel electrode are formed.

11 is a cross-sectional view of the structure of a thin film transistor liquid crystal display device formed on a transparent insulating substrate according to Example 3. FIG.

12 is a cross-sectional view of the structure of a thin film transistor liquid crystal display device formed on a transparent insulating substrate according to Example 4. FIG.

FIG. 13 is a cross-sectional view of the structure of a thin film transistor liquid crystal display device formed on a transparent insulating substrate showing an example in which the present invention is applied to a process including back channel etching.

FIG. 14 is a cross-sectional view of a state in which a protective layer and a pixel electrode are further formed from the state of FIG.

FIG. 15 is a cross-sectional view of a state in which a second metal layer, a protective layer, and a pixel electrode are further formed from the state of FIG.

FIG. 16 is a cross-sectional view showing a state in which a source structure, a drain structure, and a ridge block are formed on a transparent insulating substrate, which is an example in which the present invention is applied to a top gate type transistor.

FIG. 17 is a cross-sectional view showing a state in which a semiconductor layer, an insulating layer, and a second metal layer are further formed from the state of FIG.

FIG. 18 is a cross-sectional view showing a state in which pixel electrodes are further formed from the state of FIG.

[Explanation of symbols]

10 glass substrates 100 transparent insulating substrate 102 gate structure 104 drain structure 106 ridge block 106a long sloped surface 106b short sloped surface 108 amorphous silicon layer 109 transistor channel 11 Gate insulation layer 110 insulating layer 111 Source structure 112 second metal layer 113 Gate electrode structure 114 protective layer 116 pixel electrode 12 Gate electrode structure 16 Semiconductor layer 18 Doped semiconductor layer 21 drain 22 Source 26 bumps 28 Protective layer 30 pixels 50 transparent insulating substrate 52 first metal layer 54 photoresist block 55 photoresist block 56 Gate electrode structure 58 ridge block 58a long slope 58b Short slope 60 First insulating layer 60a Long sloped surface 60b Short sloped surface 62 Gate electrode insulation layer 64 semiconductor layer 66 Second insulating layer 67 Etching stopper 68 Doped silicon layer 69 Insulation bump 70 Second metal layer 71 Metal bump 72 Source structure 74 Drain structure 76 Protective layer 78 pixel electrode

Continued front page    F-term (reference) 2H091 FA14Y FB08 FC26 GA02                       GA13 LA17                 2H092 HA05 JA24 KA18 MA14 MA17                       MA37 PA12                 5F110 AA16 AA26 BB01 CC05 CC07                       DD02 DD03 EE03 EE04 EE06                       EE23 EE44 EE50 FF02 FF03                       FF04 FF09 FF29 GG02 GG15                       HK02 HK09 HK21 HK50 HL03                       NN02 NN16 NN24 QQ04 QQ08

Claims (22)

[Claims] 1. A thin film transistor liquid crystal display device (T) in which a pixel electrode having an inclined light diffusing surface is formed on a transparent insulating substrate.
FT-LCD) manufacturing method, wherein a first metal layer is formed on the transparent insulating substrate, and a first microphotoetching is performed on the first metal layer to form a gate electrode structure. A step of forming a ridge-shaped block formed in a region corresponding to an image display region in which a pixel electrode is formed and having a first inclined side and a second inclined side, the gate electrode structure and the ridge-shaped block And a first inclined surface that covers the surface of the transparent insulating substrate, exhibits a first inclined surface along the first inclined side of the ridge-shaped block, and exhibits a second inclined surface along the second inclined side. A step of forming an insulating layer; a step of forming a pattern of a semiconductor layer on the surface of the first insulating layer to form a channel area of a thin film transistor; and a second insulating layer covering the surface of the semiconductor layer and the first insulating layer. Forming and Second microphotoetching is performed on the second insulating layer to form an etching stopper on the surface of the semiconductor layer above the gate electrode structure, the etching stopper, the semiconductor layer, and A step of forming a second metal layer on the surface of the first insulating layer, and performing a third microphotoetching on the second metal layer to form a source structure and a drain structure on both sides of the etching stopper; Forming a protective layer and exposing a partial region of the source structure and the drain structure; forming a pixel electrode on the surface of the protective layer; and electrically connecting the pixel electrode and the drain structure A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface. 2. The first microphotoetching process comprises depositing the first metal layer, depositing a photoresist material on the surface of the first metal layer, and using a halftone photomask. Pattern is formed on the photoresist material by a microphoto process selected from a method of using a slit photomask or multiple exposures, and the pattern after the photoresist material is exposed and developed is a gate. 2. The method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface according to claim 1, which is a step of including a polar photoresist block and a ridge pattern block. 3. When performing second microphotoetching on the second insulating layer, the plurality of insulating bumps formed by the second insulating layer are formed at the same time when the etching stopper is formed by the second insulating layer. 2. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface according to claim 1, wherein a plurality of insulating bumps distributed on the first inclined surface of the ridge-shaped block are simultaneously formed. . 4. When a plurality of insulating bumps are formed on the first inclined surface of the ridge block and then a third microphotoetching is performed on the second metal layer to form a source structure and a drain structure, The tilted diffuser surface according to claim 3, wherein a plurality of metal bumps are formed by the second metal layer so as to be simultaneously arranged to intersect with the plurality of insulating bumps and distributed on the first tilted surface. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode. 5. The plurality of metal bumps are formed such that each individual metal bump is formed between the two insulating blocks and is adjacent to the insulating block. 5. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface described in 4. 6. A plurality of insulating bumps on the first insulating layer are formed so as to be uniformly distributed on both the first sloped surface and the second slope of the ridge-shaped block. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface according to claim 3. 7. The third microphotoetching is performed on the second metal layer after forming the plurality of insulating bumps on both the first sloped surface and the second sloped surface of the ridge-shaped block source. In the case of forming a structure and a drain structure, a plurality of metal bumps that are simultaneously arranged by the second metal layer so as to intersect with the plurality of insulating bumps and are distributed on both the first inclined surface and the second inclined surface are formed. 7. The method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface according to claim 6. 8. The pixel electrode having an inclined light-scattering surface according to claim 1, wherein the first metal layer and the second metal are selected from aluminum, titanium, chromium, tungsten or tantalum. Method for manufacturing thin film transistor liquid crystal display device. 9. The gradient according to claim 1, wherein the first metal layer and the second metal are at least two alloys arbitrarily selected from aluminum, titanium, chromium, tungsten or tantalum. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having a light diffusion surface. 10. A thin film transistor liquid crystal display device (T) in which a pixel electrode having an inclined light diffusing surface is formed on a transparent insulating substrate.
FT-LCD) manufacturing method, wherein a first metal layer is formed on the transparent insulating substrate, and a first microphotoetching is performed on the first metal layer to form a gate electrode structure and a pixel electrode. Forming a ridge-shaped block formed in a region corresponding to the image display region and having a first slope side and a second slope side, a gate electrode structure, a ridge block, and a transparent insulating substrate. A first insulating layer that covers the surface of the ridge-shaped block and that exhibits a first inclined surface along the first inclined side of the ridge block and a second inclined surface along the second inclined side. A step of forming a gate electrode insulating layer and a semiconductor layer on the first insulating layer in this order, and forming a second insulating layer on the surfaces of the semiconductor layer and the first insulating layer; and the second insulating layer. The second microphotoetching was performed on the gate. A step of forming an etching stopper above the electrode structure, a silicon layer and a second metal layer are sequentially deposited and formed on the transparent insulating substrate, and the second metal layer is subjected to a third microphotoetching process. Forming a source structure and a drain structure on both sides of the etching stopper, forming a protective layer and exposing a partial region of the source structure and the drain structure, and forming a protective layer on the surface of the protective layer. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusion surface, which comprises the step of forming a pixel electrode and electrically connecting the pixel electrode and the drain structure. 11. The first microphotoetching step comprises depositing the first metal layer, depositing a photoresist material on the surface of the first metal layer, and using a halftone photomask. Pattern is formed on the photoresist material by a microphoto process selected from a method of using a slit photomask or multiple exposures, and the pattern after the photoresist material is exposed and developed is a gate. The method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface according to claim 10, which is a step of including a polar photoresist block and a ridge pattern block. 12. When performing third microphotoetching on the second metal layer, a plurality of metal bumps made of the second metal layer are formed on the surface of the first insulating layer. Item 10. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light-scattering surface. 13. The thin film transistor liquid crystal display according to claim 12, wherein the metal bumps are distributed on the first inclined surface at a predetermined interval. Manufacturing method. 14. The pixel electrode having the inclined light-scattering surface according to claim 10, wherein the first metal layer and the second metal are selected from aluminum, titanium, chromium, tungsten or tantalum. Method for manufacturing thin film transistor liquid crystal display device. 15. The gradient according to claim 10, wherein the first metal layer and the second metal are at least two alloys arbitrarily selected from aluminum, titanium, chromium, tungsten or tantalum. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having a light diffusion surface. 16. A thin film transistor liquid crystal display device (T) in which a pixel electrode having an inclined light-spreading surface is formed on a transparent insulating substrate.
FT-LCD) manufacturing method, a first metal layer is formed on the transparent insulating substrate, and first microphotoetching is performed on the first metal layer to form a source structure, a drain structure, and a pixel electrode. A step of forming a ridge-shaped block formed in a region corresponding to an image display region to be formed and having a first sloping side and a second sloping side, a source structure, a drain structure, and a ridge-shaped block ,
Forming a coated semiconductor layer for covering the surface of the transparent insulating substrate; forming an insulating layer on the semiconductor layer; forming a second metal layer on the insulating layer; And a step of performing a second microphotoetching on the insulating layer and the semiconductor layer to form a pattern of the gate electrode structure and using a part of the semiconductor layer below the gate electrode structure as a channel area of a thin film transistor. Forming a protective layer and exposing a partial region of the source structure and the drain structure; forming a pixel electrode on the surface of the protective layer; and electrically connecting the pixel electrode and the drain structure. And a step of connecting to a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface. 17. The first microphotoetching process comprises depositing the first metal layer, depositing a photoresist material on the surface of the first metal layer, and using a halftone photomask. Pattern is formed on the photoresist material by a microphoto process selected from a method using a slit photomask or multiple exposures, and the pattern after the photoresist material is exposed and developed is the gate electrode. The method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light scattering surface according to claim 16, which is a step of including a photoresist block and a ridge pattern block. 18. When performing the second microphotoetching, at the same time, a plurality of bumps composed of the second metal layer, the insulating layer, and the semiconductor layer are deposited and formed on the surface of the ridge block. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having an inclined light diffusing surface according to claim 16. 19. The tilt according to claim 16, wherein a plurality of metal bumps made of the second metal layer are simultaneously formed on the surface of the ridge-shaped block when the second microphotoetching is performed. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having a light diffusion surface. 20. The inclined light diffusing surface according to claim 16, wherein when the second micro photo etching is performed, a plurality of semiconductor bumps made of the semiconductor layer are simultaneously formed on the surface of the ridge block. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode formed with. 21. The pixel electrode according to claim 16, wherein the first metal layer and the second metal are selected from aluminum, titanium, chromium, tungsten or tantalum. Method for manufacturing thin film transistor liquid crystal display device. 22. The gradient according to claim 16, wherein the first metal layer and the second metal are at least two alloys arbitrarily selected from aluminum, titanium, chromium, tungsten or tantalum. A method of manufacturing a thin film transistor liquid crystal display device having a pixel electrode having a light diffusion surface.