JP2003227856A - Emi measurement device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a magnetic field and wave source charge by measuring unnecessary radiation of an object to be measured. <P>SOLUTION: An EMI (electromagnetic interference) measurement device, in which a measurement side plate accumulating electric charge and an earth side plate are connected to a resistance for measurement and have a structure of axisymmetric to a sensor rotation shaft, has an electric field data calculation means calculating EMI electric field using measurement data in the vicinity of the EMI at the time of rotation shaft 0 degree and that in the vicinity of the EMI at the time of rotation shaft 180 degrees. It also has a measurement calculation controller calculating the wave source charge in three-dimensional position in the object to be measured by using the calculation results of the electric field in the vicinity of the EMI. As the electric field of the object is obtained by calculation through an antenna for measurement through electric conduction lines, EMI electric field-wave source charge calculation device can be easily realized. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to electromagnetic interference (EM).
I: Electromagnetic interference: Related to EMI measurement technology for spatially measuring two-dimensionally or three-dimensionally the noise (unwanted radiation: undesired electromagnetic waves) of an electronic device causing electronic noise interference, for example, an electronic component such as an IC is mounted. The present invention relates to a technique effectively applied to an EMI measuring device that measures the position, magnitude, phase, frequency, and source charge of a near electromagnetic field on a wiring board.

[0002]

2. Description of the Related Art Electromagnetic interference (E
Reduction of MI) is an issue. More recently, not only products but also board components, especially semiconductor integrated circuits (I
It is desired to reduce EMI with C) and its IC mounting board.

It turns out that there is a lot of EMI from the entire IC,
In the case of improving the IC circuit for reducing it or in the case of improving or changing the circuit for reducing the EMI of the IC mounting board, many electric circuits are incorporated in the IC or the IC mounting board. However, it is effective to identify the electric field of EMI generated from this circuit.

As an EMI electric field measuring device for measuring three-dimensional noise, for example, Japanese Patent Laid-Open No. 9-211035 and the Institute of Electrical Engineers of Japan, The Institute of Electrical Engineers of Japan, Volume 121, No. 2, 2001, P.
99-P105. The former document discloses an electric field measuring device using light, and the latter document discloses an inverse analysis regarding field source exploration.

On the other hand, the inventor of the present invention has proposed an EMI measuring device for measuring unnecessary radiation emitted from an object to be measured with a measurement loop antenna attached to a moving mechanism that moves in three dimensions with respect to the object to be measured. Proposal (Japanese Patent Application No. 11-156317
No.) and an EMI near magnetic field measurement method and apparatus therefor (Japanese Patent Laid-Open No. 2001-91555). In the latter, E
The magnetic field source current, that is, the wave source current of the device under test is calculated using the MI measurement data and the measured near-field current conversion matrix.

[0006]

Generally, when an electric field is measured in an EMI measuring device (electric field sensor) through an electric or electric conduction line, the voltage of the object to be measured is measured at the measurement field via the electric conduction line of the sensor. Relatedly, this appears as the measurement output of the sensor, and it is not possible to measure only the electric field generated by the measured object.

As a countermeasure against this, many optical electric field sensors have been proposed in which light is used as a measuring medium or a signal medium as described above so that the voltage at the measuring field of the object to be measured does not leak to the measuring instrument side. However, these optical methods have a complicated structure and are expensive.

This time, in the present inventor, further EMI
We thought that it was effective to identify the source charge. EMI
The wave source charge is a source of an EMI electric field generated by the object to be measured. In contrast, the EMI wave source current is the source of the EMI magnetic field, and it is effective to measure and analyze both sources. That is, if the EMI wave source charge and the EMI wave source current at a three-dimensional position inside the circuit are known in detail, the MI is determined.
This is because measures can be easily found. However, conventionally, the electric field source search was inaccurate and the source charge could not be specified.

An object of the present invention is to provide an inexpensive EMI measuring device capable of measuring an EMI near electric field.

Another object of the present invention is to provide an inexpensive EMI measuring device capable of measuring the EMI source charge.

The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.

[0012]

The outline of the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) An EMI measuring apparatus for measuring unwanted radiation at each measurement position while relatively scanning the measurement antenna along the surface of the object to be measured, wherein the measurement antenna can be charged. It is composed of a pair of plate-shaped electrodes arranged at a predetermined interval, the one plate-shaped electrode is connected to one electrode of the measuring resistor, and the other plate-shaped electrode is connected to the other electrode of the measuring resistor. And a grounding means for rotating the pair of plate-shaped electrodes of the measuring antenna mechanically or electrically so that the positions of the plate-shaped electrodes change depending on the positions. The EMI proximity measurement data is obtained by measuring the unwanted radiation at each position in the state set by the rotating means.

The pair of plate electrodes are rotated by 0 ° or 180 ° by the rotating means, and the 0 ° or 180 ° is rotated.
The above-mentioned unnecessary radiation is measured in the following condition. The measurement antenna includes an insulating plate having a wiring including the one plate-shaped electrode formed on one surface thereof, and an insulating plate having a wiring including the other plate-shaped electrode formed on one surface thereof, The plate-shaped electrodes are laminated with an insulating bonding material via the surface on which the wiring is provided, and the plate-shaped electrodes have the same shape and overlap each other.

(2) In the configuration of (1) described above, the EMI measuring device stores a measurement position XYZ data containing a measurement position XYZ data including X position data, Y position data and Z position data at each measurement position by the measurement antenna. XYZ data holding unit and 0 degree EM for accommodating EMI vicinity measurement data when the measurement antenna at all the measurement positions is 0 degree
An I-neighborhood measurement data holding unit, a 180-degree EMI neighborhood measurement data holding unit that stores EMI neighborhood measurement data when the measurement antenna at all measurement positions is 180 degrees,
A measurement calculation control unit having electric field data calculation means for calculating calculation electric field data from the 0 degree and 180 degree EMI vicinity measurement data and storing the calculation result in an EMI calculation electric field data holding section, and an electric conductor that can be input in advance. And the like, the measured object constituent existing position UVW data holding section for storing the measured object constituent existing position UVW data, and the calculated electric wave source charge calculation data from the calculated electric field data. In the storage of the source charge calculation data to be stored, in the calculation of the source charge, the thin columnar solid having the position where the source charge of interest to be calculated exists near the center line is the object of calculation, and the thin columnar The measurement position XYZ data at each local position existing in the three-dimensional object, the measured object constituent existence position UVW data, before The calculated electric field data is cut out, and the local position XYZ data holding section, the local measured object constituent existing position UVW data holding section, the local calculated XYZ data, the local measured object constituent existing position UVW data are stored in the local calculated electric field data holding section. , Local data cutting means for storing as locally calculated electric field data,
Based on the local measurement position XYZ data stored in the local position XYZ data holding unit and the local measured object configuration object position UVW data stored in the local measured object configuration object position UVW data holding unit, the measurement antenna is measured. A local near field electric field charge matrix generating means for generating a local near field electric field charge matrix for the electric field direction component of the rotation axis of the rotating means, and storing the local near field electric field charge matrix in the local near field electric field charge matrix holding section; The locally calculated source charge data is obtained from the near field charge matrix, and the local source charge matrix calculation means for storing this in the locally calculated source charge data holding unit and the local measured source charge data holding unit cuts out the DUT. Center of attention in a thin columnar solid The up and down several positions on each wave source charges a need exists in the vicinity, and having a wave source charge storage control unit for storing the corresponding position of the wave source charge data storage unit.

(3) In the EMI measuring apparatus according to the configuration of (2), the measurement position of the measurement position XYZ data is
The tip of the antenna for measurement is on one curved surface that is in contact with or in close proximity to the surface of the object to be measured, or on the other curved surface that is in close proximity to the bottom surface of the object to be measured. The position of the source charge of the source position UVW appears to be in the curved surface of a large number of superposed electric conductors according to the position of the measured object structure UVW data of the measured object on the multilayer substrate on which components such as ICs are mounted. The target wave charge to be calculated is a thin columnar solid having the position of the target wave charge near the center line and including the measurement position of the measurement position XYZ data and the UVW position of the DUT existence position. The source charge is calculated at a plurality of positions above and below a large number of electric conductors of interest in the vicinity of the center line in the thin columnar solid, and the thin columnar solids are moved one after another to be measured. The third of The wave source charge at position calculated, accommodating it to the wave source charge data holding unit, 3 in need zone
It is characterized in that the wave source charge at a dimensional position is obtained by the measurement calculation control unit.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for explaining the embodiments of the invention, components having the same function are designated by the same reference numeral, and the repeated description thereof will be omitted.

(Embodiment 1) FIGS. 1 to 15 are diagrams relating to an EMI measuring apparatus which is an embodiment (Embodiment 1) of the present invention. The EMI measuring device of the present invention is a semiconductor integrated circuit device or an electric circuit board, in the measurement and analysis work of the EMI of an object to be measured, at each measurement point in the immediate vicinity of a wave source such as an electromagnetic wave, the EMI near field measurement data is measured by the EMI electric field sensor. Is obtained and the EMI electric field calculation means for calculating the electric field at each measurement position and the wave source charge calculation means for calculating the charge of the wave source charge at each three-dimensional position in the object to be measured are included.

FIG. 2 is a block diagram showing the arrangement of the EMI measuring apparatus according to the first embodiment. The measurement antenna 1 is arranged on the DUT 2 such as an IC mounting board, and the measurement antenna 1 is moved by the sensor moving mechanism 18 to rotate the measurement antenna rotation shaft 26 by 0 degrees and 180 degrees. To do. E
By the MI measuring unit 19 and the EMI measuring operation means 20,
Measuring antenna rotation axis 26 for measuring the magnitude and phase of MI vicinity measurement data and accommodating the entire area on the surface of the DUT 2
Has an EMI vicinity measurement data holding unit 4A when is 0 degree,
In addition, the measurement antenna rotation axis 2 of the EMI near electric field sensor
The EMI when the rotation axis is 180 degrees, which stores the EMI vicinity measurement data when 6 is 180 degrees over the entire surface of the object to be measured.
It has a proximity measurement data holding unit 4B.

In addition, the EMI vicinity measurement data when the measuring antenna rotating shaft 26 is 0 degree, and the measuring antenna rotating shaft 2
There is an electric field data calculation means 20A for calculating an electric field from the EMI vicinity measurement data when 6 is 180 degrees, and this result is E
It is stored in the MI vicinity calculated electric field data holding unit 4.

When the sensor moving mechanism 18 is operated and the tip of the measuring antenna 1 is on the surface of the object to be measured 2 and comes into contact with or comes in close proximity, the movement is stopped, and the tip of the measuring antenna 1 at that time is stopped. X position data, Y position data, Z
Position data is obtained and these are used as measurement position XYZ data.
It has a sensor movement measurement position XYZ data operating means 21 which is stored in the measurement position XYZ data holding unit 3 which can hold this in the entire measurement range.

Here, the EMI measuring operation means 20 uses the EMI vicinity measurement data when the measuring antenna rotating shaft 26 is 0 degrees and the EM when the measuring antenna rotating shaft 26 is 180 degrees.
An EMI vicinity measurement data holding unit 4A for storing the measurement data in the vicinity of I in the entire area on the surface of the object to be measured, and a rotary shaft 1 for storing the data in the entire area on the surface of the object to be measured.
The EMI proximity measurement data holding unit 4B at 80 degrees stores the EMI proximity measurement data at this position at the position corresponding to the measurement position XYZ data.

Further, the measured object constituent existing position UVW data holding section 5 for accommodating the measured object constituent existing position UVW data concerning the existing positions of the electric conductors and the like of the measured object 2 which can be inputted in advance, is stored. Further, it has a structure having a wave source charge data holding section 6 for accommodating the wave source charge calculation data calculated at each position in the entire area of the DUT 2.

Further, in the space where the measurement position XYZ measured by the EMI near electric field sensor 1 or the existing measurement region 22 and the position UVW where the wave source charge exists in the DUT 2 are combined,
A thin columnar solid 8 is defined in which the position 23 where the target wave source charge to be calculated exists is placed near the center of the center line 24. The measured position XYZ data at each position existing therein, the EMI near-field calculation electric field data at each position, and the position UVW where the wave source charge exists, that is, the measured object structure existing position UVW data, are cut out, and this is cut out. The local position XYZ data holding unit 9, the local calculation electric field data holding unit 11, and the local measured object constituent position UVW, respectively
A local data cutout unit 12 that is stored in the data holding unit 10 is provided.

Next, there is a local near field electric field charge matrix holding unit 13, which generates a local near field electric field charge matrix from the local measurement position XYZ data and the local measured object existence position UVW data, and this local near field electric field charge matrix is generated. The local near field electric field charge matrix generation means 14 housed in the matrix holding unit 13 is provided.

Further, there is a local calculation wave source charge data holding unit 16, and the local calculation wave source charge data holding unit 16 obtains the local calculation wave source charge data from the local EMI near electric field data and the local near field electric field charge matrix.
The local source charge matrix calculation means 15 for holding the target source line data in the electric field sensor cut out of the device under test 2 with the local source charge data.
Position 2 where the wave source charge of interest exists in DUT 2 near 4
3 is an EMI wave source charge calculation device provided with a wave source charge storage unit 17 that stores wave source charge data at a plurality of positions existing above and below in 3 in the position of the wave source charge data holding unit 6.

Further, in the measurement area 22, the measurement position X
The measurement position of the YZ data is such that the tip of the EMI near electric field sensor 1 is on the curved surface of the surface of the object to be measured 2 which is in contact with or in close proximity to the surface of the object to be measured 2 or the back surface of the object to be measured 2 in another step measurement work. It is a sensor movement measurement position XYZ data operating means 21 which is located on another curved surface which is very close to the bottom, and the wave source charge position of the wave source position UVW is the object to be measured 2 of a multilayer substrate on which components such as ICs are mounted. Measurement of the position 23 where the target source charge to be calculated exists near the center line 24 so that it is in the curved surface of a large number of superposed electric conductors according to the UVW data of the measured object constituent position By the definition of the thin columnar solid 8 including the measurement position of the position XYZ data and the measured object existing position UVW position, a large number of electric conductors of interest at the position 23 near the center line 24 in the thin columnar solid 8 are detected. Is intended to wave source charge calculated at the multiple locations of the underlying, moving the thin columnar stereoscopic 8 one after another, to calculate the wave source charges in the three-dimensional position of the object 2,
This is an EMI source charge calculation apparatus having a measurement calculation control unit 7 that stores this in the source charge calculation data holding unit 6 and obtains the source charge at a three-dimensional position in the required area of the DUT 2.

In the EMI measuring apparatus according to the first embodiment, as shown in FIG.
As shown by the arrow, the measurement antenna 1 is moved (scanned) along the surface (upper surface) of the DUT 2, and the unwanted electromagnetic waves emitted from the DUT 2 are measured at each measurement position. is there. In the figure, the measurement antenna 1 is replaced by the DUT 2
The unwanted electromagnetic waves are measured while moving along the surface of the. The height measured by the measurement antenna 1 is, for example, the object to be measured 2
The height is a certain distance from the surface of the
The height should be close to or below the level. Then, the EMI measurement data obtained at this extremely close height and the local vicinity electric field charge matrix generated at this height position, that is, the measurement position XYZ data are used for calculation to calculate the wave source charge which is the electric field source of the measured object. Ask for.

The device under test 2 includes, for example, a wiring board 2a,
It is composed of a plurality of ICs mounted on the wiring board 2a and electronic components 2b, 2c, 2d such as passive components. Further, the measurement antenna 1 is the holding and rotating mechanism 1 of the sensor moving mechanism section 18.
It has a structure in which it is held by 8a and its rotation is controlled.

The measuring antenna 1 is as shown in FIG. FIG. 1 is a schematic diagram of a sensor mechanism including a measurement antenna 1. The measurement antenna 1 includes a pair of plate-shaped electrodes 10 arranged at a predetermined distance (d) at which electric charges can be charged.
It consists of 1. One plate-shaped electrode 101 (measurement plate-shaped electrode 101a) is used as the measurement resistor 102 of the EMI measurement unit 19.
The other plate-shaped electrode 101 (ground plate-shaped electrode 101b) is connected to one of the electrodes, and is connected to the other electrode of the measuring resistor 102 and to the ground potential.

Further, the pair of plate-shaped electrodes (measurement plate-shaped electrode 101a, ground plate-shaped electrode 101b) of the antenna 1 for measurement is mechanically or electrically changed so that the position of each plate-shaped electrode changes depending on the position. It has a rotating means for rotating it. By this rotating means, the pair of plate electrodes 101 can take a posture of 0 degree and a posture of 180 degrees rotated, and the unwanted radiation at each position in the states of 0 degree and 180 degrees is measured.

The rotating means does not mechanically rotate the pair of plate-shaped electrodes, but it does not mechanically rotate the pair of plate-shaped electrodes, but instead, the polarities are changed by electric means so that they are rotated. There are means (first and second modified examples shown in FIGS. 8 and 9).

In other words, this structure can be expressed as follows. As shown in FIG. 1, a measuring plate electrode 101a for charging electric charge is connected to one electrode of the measuring resistor 102, and an earth plate electrode 101b for charging electric charge is connected to the other electrode of the measuring resistor 102. It is connected. The ground plate electrode 101b is grounded. In addition, the measurement plate electrode 101a that is charged with electric charge
And the ground plate electrode 101b for charging the electric charge are close to each other in a short distance (d). A pair of plate electrodes 101 (measurement plate electrode 101a, earth plate electrode 101
Both b) are plate electrodes. Further, both plate-shaped electrodes are replaced with a vertical center axis 104 that is perpendicular to the plane passing through the center of the plane of the plate electrode (axisymmetric with respect to the measurement antenna rotation axis 26). Vertical central axis 10
The direction of 4 is the electric field direction to be measured.

Wiring 101 connected to the measuring plate electrode 101a
A and wiring 101B connected to the ground plate electrode 101b
Both extend straight upward from the central portion of the upper edge of the plate electrode 101. This extending direction is a normal line direction to the DUT 2. The pair of plate-shaped electrode wirings 101
An axis extending in the middle of A and 101B along the normal direction serves as a pair of plate-shaped electrode measurement antenna rotation axes 26. Then, the pair of plate-shaped electrodes can be rotated in the positive and negative directions about the measurement antenna rotation shaft 26, respectively, and the pair of plate-shaped electrodes can be positioned at 0 degrees or 180 degrees of rotation. Unwanted radiation is measured in this 0 degree or 180 degree state.

The measuring antenna 1 shown in FIG. 1 is conceptual. The actual measurement antenna 1 is shown in FIG.
It is as shown in (c). 3A is a front view of the measurement antenna 1, FIG. 3B is a sectional view taken along the line AA of FIG. 3A, and FIG. It is a schematic diagram which shows.

In the actual measurement antenna 1, as shown in FIG. 3B, a pair of insulating plates 51 and 52 (for example, a printed circuit board) are bonded together with an insulating bonding material 53 (for example, an epoxy resin). It is structured. A pair of insulating plates 5
As shown in FIG. 3C, the reference numerals 1 and 52 have a structure having wirings 101A and B including a measurement plate electrode 101a serving as the plate electrode 101 or a ground plate electrode 101b on one surface thereof. The surface having 101 is adhered with a bonding material 53.

The plate electrode 101 and the wirings 101A and 101B are
For example, the plate-shaped electrode 101 is a circular plate having a diameter D while being formed of copper having a thickness t. For example, D is 0.8 mm and the wiring width W is 0.1 mm. The thickness of the insulating plates 51 and 52 is 0.1 to 0.5 mm.
Becomes The bonding material 53 has a thickness of about 0.01 to 0.1 mm, which is a thickness that can maintain the electrically isolated state of the measurement plate electrode 101a and the ground plate electrode 101b. The thickness t is about 0.01 to 0.03 mm.

The insulating plates 51 and 52 can hold the probe. In addition, the measurement plate electrode 101a and the wiring 10
1A has the same pattern as that of the ground plate electrode 101b and the wiring 101B, and they are completely matched and overlapped by bonding. The shape of the plate electrode 101 is not limited to a quadrangle or a circle, and may be any other shape as long as the measurement plate electrode 101a and the ground plate electrode 101b have the same shape.

In the first embodiment, the EM is moved by the moving mechanism section.
The I measurement sensor is moved in contact with or closest to the object to be measured, and the magnitude and phase of the measurement data at these positions, that is, the measurement data near the EMI is measured. That is, in FIG. 7, the measurement antenna 1 is an antenna for measuring the unwanted radiation, and the base point antenna 25 is an antenna provided to obtain data to be the basis of the phase. The phase and the size of the measurement data of the measurement antenna 1 can be measured by measuring the unnecessary radiation just below the base antenna 25 by the base antenna 25 at the start of work and checking the data. Regarding such a configuration, Japanese Patent Application Nos. 11-156317 and 1
No. 1-2265816.

Next, the measurement will be described. At the time of measurement, the measurement antenna 1 is attached to the measurement antenna rotation shaft 26.
Is set to either 0 degrees or 180 degrees. For example, the posture is initially 0 degrees. The sensor moving mechanism 18 capable of moving in the plane directions XY and Z, that is, in the vertical direction, emits a signal when the tip of the measurement antenna 1 comes into contact with or is in close proximity to the DUT 2. At this time, the movement of the measuring antenna 1 is stopped, and X position data, Y position data, and Z position data at this time are obtained. These are the closest positions on the surface of the DUT 2 and are used as the measurement position XYZ data.

The measuring antenna 1 is for obtaining EMI vicinity measurement data of 0 ° or 180 ° of the measuring antenna rotating shaft 26 at the measuring point position with respect to the base point of the phase of the base point antenna 25. That is, in the measurement data at this measurement point position, the size and phase of 0 degrees of the measurement antenna rotation axis 26 are S0e (jα0), and the measurement antenna rotation axis 2 is
EM with the size and phase of 6 degrees of 180 degrees in the form of S1e (jα1) at 0 degrees and 180 degrees respectively
It is obtained as I proximity measurement data.

Next, a method of calculating and obtaining the EMI proximity calculation electric field data from the EMI proximity measurement data obtained by measuring the size and phase of the measurement antenna rotation axis 26 at 0 degrees and 180 degrees will be described.

In FIG. 4, assuming that the measuring antenna 1 is sufficiently smaller than the wavelength of the frequency to be handled, it is in the electric field field and the electric potential field generated by the DUT 2. Therefore, the charge on the measuring antenna 1 and the DUT 2 are measured. Considering all the charges in
The electric field and the electric potential at the spatial position of the measuring antenna 1 are the sum of the electric field and the electric potential generated by each individual electric charge. Therefore, at the frequency ω to be handled, the following formula approximately holds.

[0044]

[Equation 1]

[Equation 2]

In the mathematical expression, the dot above the character is a complex number representing the wave, and is underlined in the text. For example, q
When s0 = qs0ej (ωt + αqs0), e is the base of natural logarithm, j is √−1, t is time, qs0 is the size of q s0, αq
The expression s0 is the phase of q s0.

Here, E s0 is the electric field in the direction of the vertical central axis 104 inside the measuring plate electrode 101a for charging the electric charge of the measuring antenna 1, q s0 is the electric charge of the measuring plate electrode 101a, and q B0 is the ground plate. The electric charge of the electrode 101b, s is the area of the measuring plate electrode 101a and the earth plate electrode 101b, d
Is the distance between the pair of plate-shaped electrodes 101 (measurement plate-shaped electrode 101a and earth plate-shaped electrode 101b), ε is the dielectric constant, α is a constant related to the potential of the plate-shaped electrode that is charged, and V B is the measurement circuit loop A generated noise voltage, E is an electric field generated from the DUT 2 in the direction of the vertical center axis 104 of the antenna 1 for measurement,
V is a potential generated from the DUT 2.

The relationship between the current i 0 flowing out of the measuring plate electrode 101a, the resistance Z of the measuring resistor 102, and the electric field E s0 inside the measuring plate electrode 101a is as follows.

[0048]

[Equation 3]

[Equation 4]

Next, when the measuring antenna 1 is rotated 180 degrees upside down on the measuring antenna rotating shaft 26, the measuring plate electrode 101a for charging electric charge and the earth plate electrode 101b for charging electric charge are the measuring antenna. Rotating shaft 26
Since it is characterized by an axially symmetric structure, the following equation holds similarly.

[0050]

[Equation 5]

[Equation 6]

Here, the following shows the case where the measurement antenna 1 is rotated 180 degrees upside down on the measurement antenna rotation axis 26, and E s1 is the measurement plate electrode 101 charged with electric charge.
Electric field in the direction of the vertical central axis 104 inside a, q s1 is the electric charge of the measurement plate electrode 101a, q B1 is the ground plate electrode 101b
, V B is the noise voltage generated by the measurement circuit loop, E is the electric field in the direction of the vertical central axis 104 generated from the DUT 2,
V is a potential generated from the DUT 2 and both are 0 degree and 180 degrees.
It will be almost the same in degrees.

Similarly, the current i 1 flowing out from the measuring plate electrode 101a, the resistance Z of the measuring resistor 102,
The relationship with E s1 is as follows.

[0053]

[Equation 7]

[Equation 8]

Further, the measurement data value S 0 of 0 degrees on the measuring antenna rotating shaft 26, and 18 on the measuring antenna rotating shaft 26.
The measurement data value S 1 at the 0 ° rotational position has the following relationship.

[0055]

[Equation 9]

[Equation 10]

By rearranging the above relational expressions, they can be expressed by the following complex number expressions.

[Equation 11]

By the way, Con st is ω having a frequency of 100M
Hz to 1000 MHz, Z is 50 Ω to 500
At the level of Ω, it can be expressed as the following approximate expression.

[0058]

[Equation 12]

From this equation, the EMI vicinity measurement data S0e
The difference between (jα0) and S1e (jα1) is the electric field that is the sum of the fields of the electric fields generated by all the charges of the DUT 2, and is the electric field in the direction of the vertical central axis 104 of the measurement antenna 1.
It is proportional to (jαe). That is, by using the measurement antenna 1 of the present invention for measuring a signal through an electric conduction line and rotating the measurement antenna rotation shaft 26 by 0 degrees and 180 degrees, the measurement object is measured by obtaining EMI vicinity measurement data. Regarding the electric field generated by 2 itself, the electric field in the direction of the vertical central axis 104 of the measurement antenna 1 can be calculated.

As can be seen from the equation, the measurement plate electrode 101a
Also, the larger the area s of each plate of the ground plate electrode 101b is in consideration of the measurement resolution, the larger the output can be. Regarding the distance d between the measurement plate electrode 101a and the ground plate electrode 101b, which is not related to the formula of the result, it is considered that an extremely short distance which is considered to have a small measurement error is better. For example, about 0.01 to 0.1 mm is preferable.

Here again, from the equation, the noise voltage V B generated in the measurement circuit loop, and the potential V that appears at the measurement site from the DUT 2 and the measuring instrument side via the lead wire and becomes the measurement output are conveniently canceled. is doing. This is calculated
Voltage potential of measured object 2 and measuring instrument side, generated noise voltage V B
However, it is equivalent to the absence of the lead wire of the measurement antenna 1. Thus, the electric field specified in the direction of the vertical center axis 104 of the measurement antenna 1 can be easily obtained as a result of the calculation, which is a feature of the measurement antenna 1 of the present invention.

Therefore, in accordance with this, individual calculation of the EMI vicinity measurement data on the entire surface of the object to be measured 2 is continued by the measuring antenna 1, and the EMI on the entire surface of the object to be measured 2 is calculated.
The proximity calculation electric field data Ee (jαe) can be obtained.

Next, the first modification of the first embodiment will be described with reference to FIG. 8 when the measuring antenna 1 does not rotate with respect to the measuring antenna rotating shaft 26. EMI vicinity measurement data when the measurement antenna rotation axis 26 (see FIG. 1) is 0 degrees, and 180 of the measurement antenna rotation axis 26 (see FIG. 1).
The measurement side plate changeover switch 105 is provided in order to acquire the EMI vicinity measurement data at the same time. When the measurement data is obtained with the switch 105 set to the a side, the measurement antenna rotation axis 26 is set to the EMI vicinity measurement data at 0 degrees, and when the measurement data is obtained with the switch 105 set to the b side, the measurement antenna rotation axis is obtained. 26 at 180 degrees EMI
Use as near field measurement data.

By doing so, the equations 1 to 1
2 is similarly established. Therefore, the measurement antenna 1 can have the same function by switching the measurement side plate changeover switch 105 even if the measurement antenna rotation shaft 26 does not rotate. Further, due to the structure that does not rotate, the direction of the vertical central axis 104 can be conveniently selected without any limitation such as the Z direction.

Next, a second modification of the first embodiment will be described with reference to FIG. 9 when the measuring antenna rotating shaft 26 does not rotate. The second measuring side plate 101c, which is charged with electric charge, is connected to the second measuring resistor 107,
It is a three-plate structure in which there is a second measurement side plate 101c symmetrically opposed to the measurement plate electrode 101a which charges the electric charge with the earth plate electrode 101b in the middle,
Calculator 108 that is electrically connected (including electric field and magnetic field connections in addition to current and electromagnetic connections) to the measurement plate electrode 101a that is charged and the second measurement side plate 101c that is charged to charge It is a measurement antenna 1a provided with.

Even in the measuring antenna 1a having the three-plate structure, the same relational expressions can be obtained with the contents of the formulas 1 to 12.
The EMI vicinity calculated electric field data, which is the direction component of the vertical center axis 104 of the main antenna 1a for measurement, is obtained by subtraction calculation by the calculator 108.

That is, when the measurement antenna 1a is used, the size and phase S0e (jα0) of the measurement plate electrode 101a for charging the electric charge and the size and phase S1e (jα1) of the second measurement side plate 101c for charging the electric charge. It is not necessary to directly measure the EMI neighborhood measurement data like
These are directly subtracted by the calculator 108 to obtain E
Magnitude of MI calculated electric field data and phase Eej (αe)
It can be used very conveniently.

Further, by using the lead wire of the ground plate electrode 101b as a shield, the structure of both the lead wires of the measurement plate electrode 101a which can be shielded and which charges electric charge and the second measurement side plate 101c which charges electric charge can be arranged. Therefore, there is an advantage that the measurement accuracy is improved.

When the lead wire of the earth plate electrode 101b is used as a shield, the earth plate electrode 101b itself does not exist and the lead wire exists as a shield. It may be configured with two second measuring side plates 101c that are charged with electric charges, and it should be noted that the same function is obtained and effective in this configuration.

Next, E obtained from the measurement antenna 1
A method of calculating the wave source charge of the DUT 2 based on the MI vicinity calculated electric field data will be described.

Now, it is assumed that the width of the thin columnar solid body 8 in the thin columnar solid body 8 including the position of the EMI electric field sensor 1 and the position of the object to be measured UVW position is sufficiently smaller than the wavelength of the frequency to be handled. At this time, the phase delay due to the distance can be ignored. Further, it is assumed that an electric field is generated by the electric charges in the thin columnar solid 8. Further, in such a form, the following features are further provided.

(1) The measuring antenna 1 is very close to the DUT 2 which is an IC mounting substrate.

(2) The object to be measured 2 which is an IC mounting substrate has a flat plate shape in which an electric conductor layer having a very thin thickness and extending laterally is inserted.

By utilizing these characteristics (1) and (2), the columnar solid 8 is set as a local area of the object to be measured 2 and treated locally to perform the calculation. That is, in the first embodiment,
In the thin columnar solid 8, the local calculation formula is established. This work will be described below.

Here, paying attention to the inside of the thin columnar solid body 8, in the first embodiment, the object to be measured 2 is a three-dimensional mesh shape of the electric conductor as seen in the explanatory view of the discrete cross section in the present invention of FIG. Considering that, the skeleton formed by this mesh looks like a mesh.

In FIG. 10, the position of the measurement position XYZ data is one measurement position XY on the front surface of the DUT 2.
In the case of the Z data surface 27, the measured object constituent existence position UVW as the measured object 2 is four electric conductors in the UVW data mesh body 28, and a multilayer structure is formed as a charge source on this mesh body. The substrate.

Here, the pitches ΔX and ΔY of the measurement positions XY
Is half of the pitches ΔU and ΔV of U and V of the mesh body 28. This is the number of measurement positions XYZ on one measurement position XYZ data surface 27 and the UVW data mesh 28 of the DUT 2.
This is to make the number of the points of the measured object constituent existing position UVW, that is, the UVW data mesh body 28 equal to four. In addition, the electric charge at the points of the UVW data mesh 28 is 0.
The known charge points are excluded and the number of UVW points is reduced to make the number of points at the measurement position XYZ equal to the number of four wave source charge positions UVW on the surface of the mesh body. In this way, simultaneous equations described later can be solved.

Now, in the thin columnar solid 8 in the measurement area 22, Ee (jαe) is taken in the direction of the vertical central axis 104 of the measuring antenna 1. Here, E is the magnitude of the electric field component in the direction of the vertical central axis 104, and αe is the phase.

Further, in the thin columnar solid 8, the wave source position UVW is a mesh intersection of the constituent existence positions UVW of the DUT 2, and the wave source is Qe (jαq), which is considered as a point charge at each mesh intersection. .

Next, in the first embodiment, it is assumed that the electric field is the sum of all the electric fields caused by the point charges in the thin columnar solid 8. Further, the electric field is caused by the charge and the flow of the electric current, that is, the electric current, but in the description of the present invention, the influence of the electric current of the electric charge, that is, the electric current is assumed to be small, and attention is paid to the electric charge at that position to obtain the electric field data for EMI vicinity calculation The electric field Ee (jαe), which is an electric field component in the direction of the vertical central axis 104 of the antenna 1 for use, will be described as the following equation in the same manner as the electrostatic charge.

[0081]

[Equation 13] Here, r is the magnitude of the distance vector R between the measurement position XYZ point which is the measurement position of the measurement antenna 1 and the mesh intersection of the wave source position UVW, and θ is the vector R and the vertical central axis 104 of the measurement antenna 1. The angle, Σ is the charge Qe (jα
q) means that all of the causes are added.

Here, as a feature of the present invention, since it is stated that the mathematical expression 13 is established locally within the thin columnar solid body 8 as described above, it is formalized by adding the letter L to it. Obtain the following system of simultaneous equations.

[0083]

[Equation 14]

In this way, the electric field [E] L and the electric charge [Q] L that should be present in the thin columnar solid 8 are as described above.
And the relation of the local near field charge conversion matrix [M] L that relates the above. Here, in the present invention, description is made assuming that [M] L is an electrostatic charge.
In general, [M] L may be determined by an electromagnetic potential such as a so-called vector potential or scalar potential, and the electric field [E] L at this time is also the source charge [Q] L and the near field charge conversion matrix [M]. Let's say that they are related by L and can be used.

Since the thin columnar solid 8 is finite, the electric charge [Q] L which is inversely calculated by the data of the electric field [E] L measured and calculated in each position range is as follows. Naturally, there is a deviation from the true charge in the peripheral portion of the thin columnar solid 8, but it can be regarded as the true charge in the central portion near the center line 24 of the thin columnar solid 8 of the charge [Q] L. is there.

The reason for this is the introduction of the above-mentioned features (1) and (2). This is because in the term of Expression 13 that constructs [M] L, r is close and small at the center of the thin columnar solid 8 as can be seen from the value of (1 / rr). Further, since r is large in the peripheral portion, the value rapidly decreases. As a result, in the present invention, it can be regarded as a true charge in the central portion near the center line 24 of the thin columnar solid 8 having the charge [Q] L.

Therefore, in the present invention, the position near the center line 24 of the thin columnar solid body 8, that is, the wave source charge of interest for each of the four mesh planes of the DUT 2 to be calculated, and the position 23a where this exists. , 23b, 23c, 23d, etc., to obtain charges. The calculation is performed as follows as an example of this one calculation.

First, the simultaneous equations 14 of the matrix type
In practice, the conjugate gradient method or the like is used to find all the locally calculated wave source charges [Q] L, and among these charges, only the desired positions 23a, 23b, 23c, and 23d need to be noted.

Based on the above description, a flow chart of FIG. 11 will be described as a first embodiment of the calculation operation of the wave source charge using the EMI measuring apparatus of the present invention.

In the following work, the measurement calculation control unit 7 performs the operation and calculation processing. (1) In step 101, the electric conductor existing positions of the entire area of the DUT 2 which is a multilayer substrate are read and held in the DUT constituent presence position UVW data holding unit 5. These are four pieces of the surface of the mesh body, and the height of each surface is d / 3 or the like, which is the dimensional data for manufacturing the multilayer substrate which is the DUT 2, and can be input.

(2) In step 102, the sensor moving mechanism section 18 moves and stops the measuring antenna 1 at the positions ΔX and ΔY on the object to be measured 2 on the multilayer substrate in the state of contact or the closest approach. Measurement position XY that can hold the measurement position XYZ data of the position
The EMI proximity measurement data when the sensor rotation shaft 26 is 0 degree and the EMI proximity measurement data when the sensor rotation axis 26 is 0 degree are stored in the Z data holding unit 3 and at this position, respectively. EMI near-measurement data storage unit 4A when the rotation axis is 0 degrees, which is stored over the entire surface of the object, and EM when the rotation axis is 180 degrees, which is stored over the entire surface of the object to be measured.
The data is stored in the I vicinity measurement data holding unit 4B.

(3) In step 103, the EMI proximity measurement data when the sensor rotation shaft 26 is 0 degrees and the EMI proximity measurement data when the sensor rotation axis 26 is 180 degrees are calculated by the following formula 11, and the main measurement antenna 1 The EMI proximity calculated electric field data as the directional component of the vertical center axis 104 is calculated and stored in the corresponding position of the EMI proximity calculated electric field data holding portion over the entire surface of the measured object. That is, here, the electric field in the vicinity of EMI is obtained over the entire area of the surface of the DUT 2.

(4) In step 104, the calculated wave source charge region to be obtained in the device under test 2 on the multilayer substrate is determined.

(5) In step 105, the positions of the four electric conductors on the surface of the mesh body of the device under test 2, that is, the positions 23a, 23b, and 2 where the wave source charge exists on each surface.
The four points of 3c and 23d are vertically aligned and determined.

(6) In step 106, the first thin columnar solid 8 centered on the center line 24 having four wave source positions vertically aligned is determined. The thin columnar solid 8 is calculated while moving at pitches ΔX and ΔY depending on the designated wave source position.

(7) In step 107, the thin columnar solid body 8 of this example is described with reference to FIG. 10, in which the measurement position XYZ data at each position inside and the EMI of each position are shown. The near-field calculated electric field data and the measured object structure existing position UVW data are cut out, and these are respectively measured as local measurement position XYZ data holding section 9, local calculated electric field data holding section 11, local measured object structure existing position UVW data holding section. Store in 10.

As a measure of the size of the thin columnar solid 8, the thin columnar solid has a thickness T of 0.9 mm and a width L of 4.5 mm. The thickness t of the DUT 2 is 0.6 mm,
The width of the surface of the four mesh bodies is 0.2 mm, and the pitches ΔU and ΔV of the mesh bodies U and V at the cut-out calculation charge positions are 0.2 mm.
With respect to the position of the measurement position XYZ at 3 mm, ΔX and ΔY are set to 0.15 mm, which is a standard of 1/2 of ΔU and ΔV.

(8) In step 108, the local near field charge matrix generating means 14 uses the data of the local position XYZ data holding unit 9 and the local measured object structure existing position UVW data holding unit 10 to measure the antenna (near EMI). Vertical central axis 104 of electric field sensor 1
Local electric field charge matrix [M]
L is generated and held in the local near field charge matrix holding unit 13. In this case, the local position XY
The number of Z positions and the number of UVW positions where the local object to be measured structure exist are made to match.

(9) In step 109, the local wave source charge matrix calculation means 15 forms a linear multidimensional simultaneous equation (Formula 14) from the local near field charge matrix and the local calculated electric field data.

Next, here, the local wave source charge [Q] L is calculated by the conjugate gradient method until the error is reduced, and the result is stored and held in the local calculated wave source charge data holding unit 16.

(10) In step 110, the positions 23 and 23 existing in the center line 24 of the thin columnar solid 8 to be obtained are located at the center of the local calculation wave source charge data holding unit 16.
a, 23b, 23c, 23d charges Qa, Qb, Qc,
Qd is Qae (jαae) and Qbe (jα), respectively.
b e), Qce (jαce), and Qde (jαde). This is stored and held in the corresponding location of the wave source charge calculation data holding unit 6.

(11) In step 111, the measurement calculation control unit 7 determines the position of the next wave source to be calculated and determines the next thin columnar solid 8, and then step 10
By repeating 6 to step 110, the calculated value of the source charge region to be calculated is stored and held in the corresponding place of the source charge data holding unit 6 one after another, and the required source charge of the source charge region is stored. Ask.

Subsequent to the first embodiment described above, a second embodiment, which is an actual example of the calculation work of the wave source charges using the EMI near-field sensor 1, will be described with reference to FIG.

FIG. 12 shows a thin columnar solid 8a in the second embodiment. There is one measurement surface 27a for the measurement position XYZ data, and there are two electric conduction surfaces for the UVW mesh body 28a. In the structure of the DUT 2a, a thin A conductor line 29 having a width of 1.2 mm is located from the front side to the other side, and the source charge is charged. Further, there is a B conductor 30 provided under the entire surface, and this is an example in which the wave source charge should be charged and distributed near the center.

FIG. 12 of the explanatory view of the thin columnar solid 8a of this example.
Then, since it is assumed that the electric charge is at infinity in the V direction and there is no electric charge at both ends in the U direction, the measurement work is performed only on one thin columnar solid 8a, and the work is simplified. That is, consider one thin columnar solid 8a having a thickness T of 1.0 mm and a width L of 6.0 mm. Measurement position XYZ cut out
ΔX and ΔY are 0.2 mm, and the pitches ΔU and ΔV of the mesh bodies U and V at the calculated charge positions are 0.4 mm.
Thus, the thickness t of the A conductor line 29 and the B conductor 30 is 0.
It is a guideline of 6 mm.

In the present embodiment, the direction of the vertical central axis 104 of the measurement antenna 1 is the X direction, and the calculated electric field is related to the X direction.

This embodiment will be described below with reference to FIG. 11 which has already been described in the first embodiment. (1) In step 101, the A conductor line 29,
The electric conductor existing position of the B conductor 30 is read and held in the measured object constituent existing position UVW data holding unit 5.

(2) In step 102, the measurement antenna 1 is moved to each of the positions ΔX and ΔY by the EMI proximity calculation electric field data sensor moving mechanism section 18, and the range of the thin columnar solid 8a of the object 2a to be measured. The measurement position XYZ data of the measurement position XYZ data surface 27a is stored in the measurement position XYZ data holding unit 3, and the EMI vicinity measurement data when the sensor rotation shaft 26 is 0 degrees and the sensor rotation shaft 26 is 180 degrees. It also stores the measurement data in the vicinity of EMI from when.

(3) In step 103, the EMI vicinity calculated electric field, which is the electric field in the X direction in this case, is obtained in the region of the thin columnar solid 8a of the object 2a based on the EMI vicinity measurement data.

(4) In step 104, the calculated wave source charge region to be obtained is set to 1 of the thin columnar solid 8a of the DUT 2a.
Only one.

(5) In step 105, in this example, the UW at the central portion in the V direction in the mesh body of the DUT 2a.
Since the wave source charge on the surface 31 has a correct value, the calculation charge data result of each halftone dot on the main surface will be focused on.

(6) In step 106, the thin columnar solid 8a is used.

(7) In step 107, the measurement position XYZ at each position on the thin columnar solid 8a of the DUT 2a.
Data and EMI near-field calculation electric field data of each position,
The measured object structure existing position UVW data and the local measured position XYZ data holding unit 9, the local calculated electric field data holding unit 11, and the local measured object structure existing position UVW data holding unit 10 are stored as they are.

(8) In step 108, the local near field charge matrix generation means 14 causes the local near field charge matrix [M] L ′ in the direction of the vertical center axis 104 of the measurement antenna 1, that is, in the X direction.
Is generated and held in the local near field charge matrix holding unit 13. In this case, the number of local positions XYZ positions and the number of local UV D positions where the object to be measured constituent is present are made to match.

(9) In step 109, the local wave source charge matrix calculation means 15 causes the local near field charge matrix [M] L ', the local calculated electric field data [E] L', and the local calculated wave source charge data [Q] L '.
And form a simultaneous multidimensional equation.

[0116]

[Equation 15]

By solving this, the result of [Q] L 'is stored and held in the local calculation wave source charge data holding unit 16. In this case, the position in the vicinity of the UW surface 31 at the central portion in the V direction can be set to a substantially correct value. Therefore, the corresponding portion of the UW surface 31 in the central portion in the V direction in the mesh body of the DUT 2a is set as the calculated wave source charge to be obtained.

(10) In step 110, in this example, the calculated source charge data of the corresponding portion of the UW surface 31 in the V direction center portion of the mesh body of the DUT 2a is stored in the corresponding location of the source charge data holding unit 6, It shall be retained and terminated.

As described above, in the second embodiment, which is an example, the source charge can be calculated by The result of this work will be described below. FIG. 13 shows an example of acquisition of EMI vicinity measurement data when the measurement antenna 1 on the measurement position XYZ data surface 27a has the rotation axis of 0 ° and 180 °. In this embodiment, measurement is performed in the direction of the vertical center axis 104 of the measurement antenna 1, that is, the X direction. Further, the EMI vicinity calculated electric field data example calculated from this is an EMI vicinity calculated electric field data example in the X direction. In addition, an example of calculated wave source charge data obtained by the conjugate gradient method from the EMI near-field calculated electric field data and the local near-field electric field charge matrix is also shown. In this example, in the calculated wave source charge data, inconvenient unmatched data can be seen in the front and back in the V direction. However, as described above, it can be seen that the vicinity of the UW surface 31 in the central portion in the V direction shows a correct value. FIG. 14 shows cutout data of the UW surface 31 in the central portion in the V direction in the mesh body of the DUT 2a. The charge 32 of the source charge of the A conductor line 29 and the charge distribution 33 of the source charge of the B conductor 30 are shown, and the result agrees with the theoretical tendency. This is satisfied as the calculated charge estimation value as the device of the present invention.

Here, a third practical example in which the present invention is used in the inspection process of the product design trial production process of the semiconductor IC will be described. 5 and 6 show the DUT 2 of FIG. 4, for example, and the electronic component 2b is an example of a microcomputer as a semiconductor IC.

The microcomputer 34 shown in FIGS. 5 and 6 is the one that has undergone the product circuit design, the wafer processing step, and the package assembly step. In this example, after the package assembling process is completed, the EMI electric field magnitude is measured and calculated in the inspection process. This result will be compared with the result of preliminary simulation in product circuit design, and analysis and study will be performed. In this work, the design of the product circuit was changed by checking the magnitude of the electric field of EMI, the simulation method was also improved, and a new prototype was made.
It is possible to reduce I.

Here, a measurement example of the inspection process of the semiconductor prototype process will be described. The microcomputer (semiconductor device) 34 shown in FIG. 5 and FIG.
6 and the inner ends of the leads 37 are inside the resin package 35. Further, the leads 37 project from the peripheral surface of the resin package 35 to form external electrode terminals. In the embodiment, the lead 37 is a gull wing type that can be surface-mounted. Although not shown, in the resin package 35, the lead 37 and the electrode (not shown) of the semiconductor chip 36 are connected by a conductive wire. The microcomputer 34 is mounted on the wiring board 38.

The source of the EMI is the semiconductor chip 36, and the point is the EMI radiation from the semiconductor chip 36, which is an example measured on the resin package 35 that protects the semiconductor chip 36. In this example, 0.4m from the 35th surface of the resin package
The surface separated by m was used as the measurement plane 40, and measurement was performed at 30 points × 30 points. FIG. 15 shows an example of measured values. In the art, the maximum value 41 of the electric field in a plane direction electric field including the X direction and the Y direction is calculated and illustrated. 81 MHz is mainly used, and this example is an electric field at this frequency. As shown in FIG. 15, the maximum value 41 appears in two places.

In general, the outflow of electromagnetic energy on the measurement surface is indicated by a pointing vector. The pointing vector is represented by the vector product of the electric field and the magnetic field, and the electric field can be measured and calculated as in this example to calculate the vector product of the magnetic field. Conventionally, it was not possible to obtain electromagnetic energy because only magnetic field measurement was possible, but it is also an advantage that electromagnetic energy can be calculated with a pointing vector by the measurement of the first embodiment.

In this measurement step, in this example, 81M
For Hz, comparison with simulation at this frequency becomes easier. As a result, this microcomputer 3
The EMI reduction measures of 4 can be easily found. This is returned to the circuit design process again, and as a result, the improved microcomputer can be completed quickly and can lead to early mass production of this product.

According to this embodiment, the following effects are obtained. (1) In the present invention, a measurement antenna 1 for measuring through an electric or electric conduction wire is proposed, and the measurement antenna 1 is rotated by 0 ° and 180 ° by the sensor rotation shaft 26, or a measurement side plate changeover switch. Switching is performed by 105 to measure the EMI vicinity measurement data. With this data, the noise voltage VB generated in the measuring circuit loop and the potential V generated from the DUT 2 are canceled, which is calculated in relation between the DUT 2 and the measuring instrument via the electric conduction line. No voltage potential is involved. Further, the electric field component in the direction of the vertical central axis 104 of the measurement antenna 1, that is, the EMI vicinity calculated electric field in the sensor direction can be easily obtained by calculation. Therefore, in order to avoid a voltage related between the device under test 2 and the measuring instrument, compared with the optical electric field sensor having a complicated structure in which light is used as the measurement signal medium, the structure using the electric conductive wire is easier. Thus, an EMI near electric field sensor can be realized.

(2) Further, the measurement position XYZ data and the EMI vicinity calculated electric field data at each position extremely close to the object to be measured 2 are acquired, and the object to be measured 2 is thin on an IC mounting substrate or the like and is placed horizontally. A flat plate shape with a spreading electric conductor is inserted, and in such a form, each local data is cut out by the definition of the thin columnar solid 8. Therefore, calculation of the value of the unknown charge of the linear multidimensional simultaneous equation is practical. In the application, the local near field charge matrix is constructed within the thin columnar solid 8, so that the matrix calculation for the source charge calculation cannot be handled by the original long matrix in the local matrix regardless of the entire system. However, with this matrix of a small order, the source charge can be calculated with a high resolution dimension for practical use.

(3) The data of the existing position of the object to be measured concerning the existing position of the electric conductor is placed at the position of the multilayer electric conductor of the multilayer substrate of the object to be measured 2, and the measurement position of the measurement position XYZ data is EMI. Since the tip of the near electric field sensor is on one curved surface that is in contact with or in close proximity to the surface of the object to be measured, it is possible to obtain a better value of the wave source charge.

(4) From the above items (1) to (3),
The source charge that actually flows and exists in the electric conductor layer can be calculated for each frequency ω. That is, at each frequency ω, the electric conductor charge inside the object to be measured becomes apparent at a higher resolution position in the three-dimensional position. As a result, in the next step, the voltage at all positions of the internal circuit of the device under test can be calculated at each frequency, and the EMI reduction countermeasure method can be more easily found.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

[0131]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1) It is possible to provide an inexpensive EMI measuring device capable of measuring the electric field in the vicinity of EMI.

(2) It is possible to provide an inexpensive EMI measuring device capable of measuring the EMI wave source charge.

[Brief description of drawings]

FIG. 1 is an EM that is an embodiment (first embodiment) of the present invention.
It is a schematic diagram which shows the sensor mechanism of I measuring device.

FIG. 2 is a block diagram showing a configuration of an EMI measuring device according to the first embodiment.

FIG. 3 is a schematic diagram showing a measurement antenna of the EMI measuring device according to the first embodiment.

FIG. 4 is a schematic diagram showing an EMI near magnetic field measuring method by the EMI measuring device of the first embodiment.

FIG. 5 is a schematic perspective view showing a semiconductor device mounted on a wiring board.

FIG. 6 is a schematic cross-sectional view of a semiconductor device mounted on a wiring board.

FIG. 7 is a schematic diagram for explaining a measurement function of EMI vicinity measurement data according to the first embodiment.

FIG. 8 is a schematic diagram showing a sensor mechanism including a changeover switch which is a first modification of the first embodiment.

FIG. 9 is a schematic diagram showing a sensor mechanism including a calculator that is a second modification of the first embodiment.

FIG. 10 is a cross-sectional explanatory diagram for explaining discretization in the EMI measuring apparatus according to the first embodiment.

FIG. 11 is a flowchart showing steps of proximity measurement, electric field and wave source charge calculation by the EMI measuring apparatus according to the first embodiment.

FIG. 12 is a schematic diagram showing a thin columnar solid in the measurement of the wave source charge by the EMI measuring apparatus according to the first embodiment.

FIG. 13 is a three-dimensional graph showing the neighborhood measurement data and the neighborhood calculated electric field data obtained by measuring the wave source charge.

FIG. 14 is a graph showing a measurement result of wave source charges by the EMI measuring apparatus according to the first embodiment.

FIG. 15 is a three-dimensional graph showing a wave source of electric charges by the EMI measuring device according to the first embodiment.

[Explanation of symbols]

1 ... Antenna for measurement, 2, 2a ... Object to be measured, 2a ... Wiring board, 2b, 2c, 2d ... Electronic component, 3 ... Measurement position XY
Z data holding unit, 4 ... EMI calculation electric field data holding unit, 4
A ... 0 degree EMI vicinity measurement data holding section, 4B ... 180 degree EMI vicinity measurement data holding section, 5 ... DUT existence position UVW data holding section, 6 ... Source charge data holding section,
Reference numeral 7 ... Measurement calculation control unit, 8 ... Thin columnar solid body, 9 ... Local position XYZ data holding unit, 10 ... Local measured object constituent existing position UVW data holding unit, 11 ... Local calculation electric field data holding unit, 12 ... Local data Cutting means,
13 ... Local near field electric field charge matrix holding unit, 14 ...
Local near field electric field charge matrix generation means, 15 ... Local wave source charge matrix calculation means, 16 ... Local calculated wave source charge data holding section, 17 ... Wave source charge storage control section, 1
8 ... Sensor moving mechanism part, 18a ... Holding rotation mechanism, 19 ...
EMI measuring section, 20 ... EMI measuring operating means, 20A ... Electric field data calculating means, 21 ... Sensor movement measurement position XYZ data operating means, 22 ... Measuring area, 23, 23a-23d ...
Position, 24 ... Center line, 25 ... Base antenna, 26 ... Measuring antenna rotation axis, 27, 27a ... Measurement position XYZ data plane, 28, 28a ... UVW data mesh, 29 ... A conductor line, 30 ... B conduction Body, 31 ... UW surface, 32 ... Charge of wave source charge, 33 ... Charge distribution of wave source charge, 3
4 ... Microcomputer (semiconductor device), 35 ... Resin package, 36 ... Semiconductor chip, 37 ... Lead, 38
... wiring board, 40 ... measurement plane, 41 ... maximum value, 101 ...
Plate-shaped electrode, 101a ... Measuring plate-shaped electrode, 101b ... Ground plate-shaped electrode, 101c ... Second measurement side plate, 101A, 10
1B: wiring, 105: measurement side plate changeover switch, 10
7 ... 2nd resistance for measurement, 108 ... Calculator.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Seiji Hori             Hitachi Device, 3681 Hayano, Mobara-shi, Chiba             Engineering Co., Ltd. (72) Inventor Masao Uematsu             Hitachi Device, 3681 Hayano, Mobara-shi, Chiba             Engineering Co., Ltd. (72) Inventor Tsutomu Hanno             Hitachi Device, 3681 Hayano, Mobara-shi, Chiba             Engineering Co., Ltd. (72) Inventor Atsushi Nakamura             5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Stock             Ceremony Company within Hitachi Semiconductor Group

Claims (5)

[Claims] 1. An EMI measuring apparatus for measuring unnecessary radiation at each measurement position while relatively scanning the measuring antenna along the surface of the object to be measured, wherein the measuring antenna is a predetermined chargeable type. It is composed of a pair of plate-shaped electrodes arranged at intervals, the one plate-shaped electrode is connected to one electrode of the measuring resistor, the other plate-shaped electrode is connected to the other electrode of the measuring resistor. And a grounding means, which has a rotating means for mechanically or electrically rotating the pair of plate-shaped electrodes of the measurement antenna so that the position of each plate-shaped electrode changes at that position. An EMI measuring apparatus, characterized in that the EMI measurement data is obtained by measuring the unwanted radiation at each position set by the rotating means. 2. The pair of plate-shaped electrodes are rotated by 0 ° or 180 ° by the rotating means to obtain 0 ° or 180 °.
The EMI measuring device according to claim 1, wherein the unnecessary radiation is measured in a degree state. 3. The measurement antenna includes an insulating plate having a wiring including the one plate-shaped electrode formed on one surface, and an insulating plate having a wiring including the other plate-shaped electrode formed on one surface. The pair of plate-shaped electrodes are laminated with an insulating bonding material via the surface on which the wiring is provided, and the plate-shaped electrodes have the same shape and are overlapped with each other. The EMI measuring device according to claim 1. 4. The EMI measuring device according to claim 1, wherein a measurement position XY including X position data, Y position data, and Z position data at each measurement position by the measurement antenna.
A measurement position XYZ data holding unit for storing Z data, a 0 degree EMI proximity measurement data holding unit for storing EMI proximity measurement data when the measurement antenna is 0 degrees at all the measurement positions, and at all the measurement positions 180-degree EMI for accommodating measurement data in the vicinity of EMI when the measurement antenna is 180 degrees
A proximity measurement data holding unit; and a measurement calculation control unit having an electric field data calculation means for calculating the calculated electric field data from the 0 ° and 180 ° EMI vicinity measurement data and storing the calculation result in the EMI calculation electric field data holding unit. , A DUT existence position UVW data holding unit for accommodating a DUT existence position UVW data regarding an existence position of an electric conductor or the like that can be input in advance; and a wave source charge calculated from the calculated electric field data. A source charge calculation data holding unit that stores the calculated source charge calculation data, and in the calculation of the source charge, a thin columnar solid having a position near the center line at which the target source charge to be calculated exists is calculated. The measurement position XYZ data at each local position existing in the thin columnar solid as an object,
The measured object constituent existing position UVW data and the calculated electric field data are cut out, and the local position XYZ data holding section, the local measured object constituent existing position UVW data holding section, and the local calculated electric field data holding section are local positions XYZ. Data, local position of the DUT structure UVW
Local data cutting means for storing data and local calculated electric field data, local measurement position XYZ data stored in the local position XYZ data holding unit, local data stored in the local measured object structure existing position UVW data holding unit The local vicinity electric field charge matrix is generated with respect to the electric field direction component of the rotation axis of the rotating means of the measurement antenna based on the measured object existing position UVW data, and the local vicinity electric field charge matrix storage unit stores the local vicinity electric field charge matrix. Electric field charge matrix generation means, local calculated wave source charge data is obtained from the local calculated electric field data and the local vicinity electric field charge matrix, and the local calculated wave source charge matrix calculation means is stored in a local calculated wave source charge data holding unit; Calculation In the source charge data holding unit, each source charge obtained at a plurality of positions above and below the center line of interest in the thin columnar solid cut out of the DUT is set to the position of the source charge data holding unit. An EMI measuring device having a wave source charge storage control unit for storing. 5. The EMI measuring device according to claim 4, wherein the measurement position of the measurement position XYZ data is one of which the tip of the measurement antenna is in contact with or in close proximity to the surface of the object to be measured. On the curved surface of, or on another curved surface, which is in close proximity to the lower surface of the object to be measured, the position of the wave source charge of the wave source position UVW is measured on the multilayer substrate on which components such as ICs are mounted. Position UV of the measured object structure
Based on the W data, the target wave source charge to be calculated is located in the curved surface of a large number of superposed electric conductors, and the position of the target wave source charge is near the center line, and the measurement position XYZ
A thin columnar solid including a measurement position of data and a UVW position of the object constructing body, and wave sources at a plurality of positions above and below a number of electric conductors of interest near the center line in the thin columnar solid. The charge is calculated by moving the thin columnar solids one after another to calculate the wave source charge at a three-dimensional position in the object to be measured, and storing the wave source charge in the wave source charge data holding unit to set the 3 An EMI measuring device, wherein the wave source charge at a dimensional position is obtained by the measurement calculation control unit.