JP2003218430A5 - - Google Patents

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JP2003218430A5
JP2003218430A5 JP2002278935A JP2002278935A JP2003218430A5 JP 2003218430 A5 JP2003218430 A5 JP 2003218430A5 JP 2002278935 A JP2002278935 A JP 2002278935A JP 2002278935 A JP2002278935 A JP 2002278935A JP 2003218430 A5 JP2003218430 A5 JP 2003218430A5
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magnetization vector
reset
pinned layer
layer
magnetization
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JP4456805B2 (en
JP2003218430A (en
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Priority claimed from US09/971,347 external-priority patent/US6649423B2/en
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Claims (31)

ピン止め層およびセンス層を含む磁気トンネル接合を形成するステップと、
前記層の少なくとも１つの磁化ベクトルを再設定するステップ
を含む、方法。Forming a magnetic tunnel junction including a pinned layer and a sense layer;
Resetting at least one magnetization vector of the layer. 前記接合をアニールしながら、対象とする方向に磁界を印加することにより、磁化ベクトルが再設定される、請求項１の方法。  The method of claim 1, wherein the magnetization vector is reset by applying a magnetic field in a direction of interest while annealing the junction. 前記ピン止め層に対して、対象とする方向に磁界を印加しながら、前記ピン止め層のブロッキング温度より高い温度でアニールすることにより、前記ピン止め層磁化ベクトルが再設定される、請求項１の方法。  The pinned layer magnetization vector is reset by annealing the pinned layer at a temperature higher than the blocking temperature of the pinned layer while applying a magnetic field in a target direction. the method of. 前記センス層に対して、対象とする方向に磁界を印加しながら、前記センス層の容易軸を回転させるための閾値温度より高い温度に前記接合を加熱することにより、前記センス層の磁化の角度が再設定される、請求項１の方法。  The magnetization angle of the sense layer by heating the junction to a temperature higher than a threshold temperature for rotating the easy axis of the sense layer while applying a magnetic field to the sense layer in a target direction. The method of claim 1, wherein is reset. 前記接合の切替え特性を検査するステップと、
検査結果にしたがって少なくとも１つの磁化ベクトルを再設定するステップ
をさらに含む、請求項１の方法。Inspecting the switching characteristics of the joint;
The method of claim 1, further comprising resetting at least one magnetization vector according to the inspection result. 前記センス層磁化ベクトルおよび前記ピン止め層磁化ベクトルはいずれも、再アニールすることにより再設定される、請求項１の方法。  The method of claim 1, wherein both the sense layer magnetization vector and the pinned layer magnetization vector are reset by reannealing. 前記磁化ベクトルが、切替え曲線の対称性を改善するように再設定される、請求項６の方法。  The method of claim 6, wherein the magnetization vector is reset to improve the symmetry of the switching curve. 前記磁化ベクトルが、クリティカルな切替え磁界を低減するように再設定される、請求項６の方法。  The method of claim 6, wherein the magnetization vector is reset to reduce critical switching fields. 前記磁化ベクトルが、同じ方向を向くように再設定される、請求項６の方法。  The method of claim 6, wherein the magnetization vectors are reset to point in the same direction. 前記ピン止め層磁化ベクトルは、強い強磁性結合および弱い反強磁性結合を補償するように再設定される、請求項１の方法。  The method of claim 1, wherein the pinned layer magnetization vector is reset to compensate for strong ferromagnetic coupling and weak antiferromagnetic coupling. 前記ピン止め層磁化ベクトルは、前記センス層磁化ベクトルから離れるように動かされる、請求項１０の方法。   The method of claim 10, wherein the pinned layer magnetization vector is moved away from the sense layer magnetization vector. 前記ピン止め層磁化ベクトルは、切替え曲線の対称性を改善するように再設定される、請求項１０の方法。  The method of claim 10, wherein the pinned layer magnetization vector is reset to improve the symmetry of the switching curve. 前記ピン止め層磁化ベクトルは、クリティカルな切替え磁界を低減するように再設定される、請求項１０の方法。  11. The method of claim 10, wherein the pinned layer magnetization vector is reset to reduce critical switching fields. センス層の磁化の角度が、ピン止め層の磁化の角度とは無関係に変えられる、請求項１の方法。  The method of claim 1, wherein the angle of magnetization of the sense layer is varied independent of the angle of magnetization of the pinned layer. ピン止め層およびセンス層を含む磁気トンネル接合を形成するステップと、
前記接合についての所望の切替え曲線を決定するステップと、
前記層の少なくとも１つの層の磁化ベクトルを再設定するステップ
を含む、方法。Forming a magnetic tunnel junction including a pinned layer and a sense layer;
Determining a desired switching curve for the joint;
Resetting the magnetization vector of at least one of the layers. 前記センス層磁化ベクトルおよび前記ピン止め層磁化ベクトルはいずれも、再アニールすることにより再設定される、請求項１５の方法。  The method of claim 15, wherein both the sense layer magnetization vector and the pinned layer magnetization vector are reset by re-annealing. 前記磁化ベクトルが、切替え曲線の対称性を改善するように再設定される、請求項１６の方法。  The method of claim 16, wherein the magnetization vector is reset to improve the symmetry of the switching curve. 前記磁化ベクトルが、クリティカルな切替え磁界を低減するように再設定される、請求項１６の方法。  The method of claim 16, wherein the magnetization vector is reset to reduce critical switching fields. 前記ピン止め層とセンス層の容易軸が同じ方向を向くように、前記磁化ベクトルを再設定する、請求項１６の方法。  The method of claim 16, wherein the magnetization vector is reset such that the easy axes of the pinned layer and the sense layer are in the same direction. 前記ピン止め層磁化ベクトルが、再アニールすることによってのみ再設定される、請求項１５の方法。  The method of claim 15, wherein the pinned layer magnetization vector is reset only by reannealing. 前記ピン止め層磁化ベクトルは、前記センス層磁化ベクトルから離れるように動かされる、請求項２０の方法。  21. The method of claim 20, wherein the pinned layer magnetization vector is moved away from the sense layer magnetization vector. 前記ピン止め層磁化ベクトルが、切替え曲線の対称性を改善するように再設定される、請求項２０の方法。  21. The method of claim 20, wherein the pinned layer magnetization vector is reset to improve the symmetry of the switching curve. 前記ピン止め層磁化ベクトルが、クリティカルな切替え磁界を低減するように再設定される、請求項２０の方法。  21. The method of claim 20, wherein the pinned layer magnetization vector is reset to reduce critical switching fields. 前記センス層の磁化の角度が、ピン止め層の磁化の角度とは無関係に変えられる、請求項２０の方法。  21. The method of claim 20, wherein the angle of magnetization of the sense layer is varied independent of the angle of magnetization of the pinned layer. 磁気トンネル接合において、
ピン止め層であって、該ピン止め層の面に存在する第１の磁化ベクトルを有する、ピン止め層と、
センス層であって、該センス層の面に存在する第２の磁化ベクトルを有するセンス層
を有し、
前記第１の磁化ベクトルと第２の磁化ベクトルの少なくとも１つが、異なる角度に再設定されており、前記異なる角度は、前記接合の所望の切替え曲線に対応することからなる、磁気トンネル接合。In magnetic tunnel junctions,
A pinned layer having a first magnetization vector present on a surface of the pinned layer;
A sense layer, comprising a sense layer having a second magnetization vector present on a surface of the sense layer;
A magnetic tunnel junction, wherein at least one of the first magnetization vector and the second magnetization vector is reset to a different angle, the different angle corresponding to a desired switching curve of the junction. 前記接合が強い強磁性結合と反強磁性結合を有し、前記第１のベクトル及び第２のベクトルの両方が再設定されている、請求項２５の磁気トンネル接合。  26. The magnetic tunnel junction of claim 25, wherein the junction has strong and antiferromagnetic coupling, and both the first and second vectors are reset. 前記両方のベクトルが同じ方向を向く、請求項２６の磁気トンネル接合。  27. The magnetic tunnel junction of claim 26, wherein both vectors are in the same direction. 前記接合が強い強磁性結合と弱い反強磁性結合を有し、前記第１のベクトルのみが再設定されている、請求項２５の磁気トンネル接合。  26. The magnetic tunnel junction of claim 25, wherein the junction has strong ferromagnetic coupling and weak antiferromagnetic coupling, and only the first vector is reset. 前記第１のベクトルが、前記第２のベクトルと異なる角度を有する、請求項２５の磁気トンネル接合。  26. The magnetic tunnel junction of claim 25, wherein the first vector has a different angle than the second vector. 前記磁気トンネル接合が強い強磁性結合を有し、前記切替え曲線の少なくとも半分が対称性を有する、請求項２５の磁気トンネル接合。  26. The magnetic tunnel junction of claim 25, wherein the magnetic tunnel junction has strong ferromagnetic coupling and at least half of the switching curve is symmetric. 前記磁気トンネル接合が強い反強磁性結合を有する、請求項３０の磁気トンネル接合。  The magnetic tunnel junction of claim 30, wherein the magnetic tunnel junction has strong antiferromagnetic coupling.
JP2002278935A 2001-10-04 2002-09-25 Manufacturing method of magnetic tunnel junction Expired - Fee Related JP4456805B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/971,347 US6649423B2 (en) 2001-10-04 2001-10-04 Method for modifying switching field characteristics of magnetic tunnel junctions
US09/971347 2001-10-04

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JP2003218430A JP2003218430A (en) 2003-07-31
JP2003218430A5 true JP2003218430A5 (en) 2005-04-14
JP4456805B2 JP4456805B2 (en) 2010-04-28

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US (2) US6649423B2 (en)
EP (1) EP1300853B1 (en)
JP (1) JP4456805B2 (en)
KR (1) KR100923772B1 (en)
CN (1) CN100336239C (en)
DE (1) DE60203677T2 (en)
TW (1) TWI222063B (en)

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