JP2003218024A5 - - Google Patents
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- JP2003218024A5 JP2003218024A5 JP2002058118A JP2002058118A JP2003218024A5 JP 2003218024 A5 JP2003218024 A5 JP 2003218024A5 JP 2002058118 A JP2002058118 A JP 2002058118A JP 2002058118 A JP2002058118 A JP 2002058118A JP 2003218024 A5 JP2003218024 A5 JP 2003218024A5
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Claims (11)
第1面上に配置された少なくとも1つの計測マークを照明光により照明して前記計測マークの空間像を前記投影光学系を介して第2面上に形成し、前記空間像に対して所定の計測用パターンを走査し、該走査中に前記計測用パターンを介した前記照明光を光電検出し、その検出結果として前記空間像に対応する光強度信号を得る空間像計測を、前記投影光学系の状態を変化させて、繰り返し行う空間像計測工程と;
前記空間像計測工程での計測結果に基づいて、前記投影光学系の状態の変化量と前記状態の変化に応じた特定の結像特性の変化量との関係を算出する算出工程と;を含む計測方法。A measurement method for measuring imaging characteristic adjustment information used to correct a change in imaging characteristic of a projection optical system,
At least one measurement mark arranged on the first surface is illuminated with illumination light to form an aerial image of the measurement mark on the second surface via the projection optical system. The projection optical system scans a measurement pattern, photoelectrically detects the illumination light via the measurement pattern during the scan, and obtains a light intensity signal corresponding to the aerial image as a detection result. by changing the state, the aerial image measurement step repeated;
Calculating a relationship between a change amount of the state of the projection optical system and a change amount of a specific imaging characteristic according to the change of the state based on a measurement result in the aerial image measurement step. Measurement method.
前記算出工程では、前記投影光学系の状態の変化量と前記状態の変化に応じた最良フォーカス位置の変化量との関係を算出することを特徴とする請求項1に記載の計測方法。In the aerial image measurement process, the measurement of the aerial image in which at least one arrangement metrology mark measurement points within the field of the projection optical system, for a plurality of states of changing the state of the projection optical system, measuring gauge Repeatedly while changing the position of the pattern for the optical axis direction,
The measurement method according to claim 1, wherein in the calculation step, a relationship between a change amount of the state of the projection optical system and a change amount of the best focus position according to the change of the state is calculated.
前記算出工程では、前記投影光学系の状態の変化量と前記状態の変化に応じた球面収差の変化量との関係を算出することを特徴とする請求項1に記載の計測方法。In the aerial image measurement step, measurement of the aerial image of a plurality of measurement marks composed of line and space patterns with different duty ratios arranged at at least one measurement point in the field of view of the projection optical system is performed on the projection optical system. state for a plurality of states with varying repeatedly performed while changing the position in the direction of the optical axis of the front Symbol measurement pattern,
The measurement method according to claim 1, wherein in the calculation step, a relationship between a change amount of the state of the projection optical system and a change amount of the spherical aberration according to the change of the state is calculated.
前記算出工程では、前記投影光学系の状態の変化量と前記状態の変化に応じた倍率、ディストーション及びコマ収差の少なくとも1つの変化量との関係を算出することを特徴とする請求項1に記載の計測方法。In the aerial image measurement step, the measurement of the aerial image of a plurality of measurement marks arranged at a plurality of measurement points in the field of view of the projection optical system is repeated for a plurality of states in which the state of the projection optical system is changed. Done
2. The calculation step according to claim 1, wherein a relationship between a change amount of the state of the projection optical system and at least one change amount of magnification, distortion, and coma according to the change of the state is calculated. Measurement method.
前記算出工程では、前記計測用パターンの複数の位置でそれぞれ得られる前記計測マークの空間像に対応する各光強度信号と、焼き付け法の際に設定されるレジスト感光閾値に相当する閾値とを用いて前記空間像のエッジ位置をそれぞれ求め、該エッジ位置の算出結果に基づいて計測マークの結像位置を、各計測用パターンの位置毎に、かつ前記投影光学系の状態毎に求め、該算出結果に基づいて、前記投影光学系の状態の変化量と前記状態の変化に応じた前記照明光のテレセントリシティの変化量との関係を算出することを特徴とする請求項1に記載の計測方法。In the aerial image measurement process, the measurement of the aerial image in which at least one arrangement metrology mark measurement points within the field of the projection optical system, for a plurality of states of changing the state of the projection optical system, measuring gauge Each at a plurality of positions in the optical axis direction of the pattern for use,
In the calculation step, each light intensity signal corresponding to the aerial image of the measurement mark respectively obtained at a plurality of positions of the measurement pattern and a threshold corresponding to a resist photosensitive threshold set in the printing method are used. Then, the edge position of the aerial image is respectively obtained, and the imaging position of the measurement mark is obtained for each position of the measurement pattern and for each state of the projection optical system based on the calculation result of the edge position. The measurement according to claim 1, wherein a relationship between a change amount of the state of the projection optical system and a change amount of telecentricity of the illumination light according to the change of the state is calculated based on the result. Method.
前記算出工程では、前記投影光学系の状態の変化量と前記状態の変化に応じた像面湾曲の変化量との関係を算出することを特徴とする請求項1に記載の計測方法。In the aerial image measurement step, a plurality of the measurement of the aerial image of the plurality of measurement marks disposed in the measuring point, a plurality of states of changing the state of the projection optical system within the field of the projection optical system, before Repeatedly changing the position of the measurement pattern in the optical axis direction,
The measurement method according to claim 1, wherein in the calculation step, a relationship between a change amount of the state of the projection optical system and a change amount of the field curvature corresponding to the change of the state is calculated.
請求項1〜8のいずれか一項に記載の計測方法によって、前記投影光学系の状態の変化量と前記状態の変化に応じた特定の結像特性の変化量との関係を、結像特性調整情報として求める工程と;
該求めた結像特性調整情報と目標補正量とに基づいて、前記投影光学系の前記特定の結像特性を調整する工程と;を含む結像特性調整方法。An image formation characteristic adjustment method for adjusting an image formation characteristic of a projection optical system,
The measuring method according to any one of claims 1-8, the relationship between the change amount of a particular imaging characteristics in response to changes in the state variation of the state of the projection optical system, imaging characteristics A process to obtain as adjustment information;
Adjusting the specific imaging characteristic of the projection optical system based on the obtained imaging characteristic adjustment information and the target correction amount.
請求項1〜8のいずれか一項に記載の計測方法によって、前記投影光学系の状態の変化量と前記状態の変化に応じた特定の結像特性の変化量との関係を、結像特性調整情報として、前記マスクを照明する複数の照明条件の各々について予め求める工程と;
設定された照明条件に応じて、その照明条件に対応する前記結像特性調整情報と目標補正量とに基づいて、前記投影光学系の前記特定の結像特性を調整する工程と;
該調整後の前記投影光学系を介して前記パターンを基板上に転写する工程と;を含む露光方法。An exposure method for transferring a mask pattern onto a substrate via a projection optical system,
The measuring method according to any one of claims 1-8, the relationship between the change amount of a particular imaging characteristics in response to changes in the state variation of the state of the projection optical system, imaging characteristics A step of obtaining in advance for each of a plurality of illumination conditions for illuminating the mask as adjustment information;
Adjusting the specific imaging characteristic of the projection optical system based on the imaging characteristic adjustment information and the target correction amount corresponding to the illumination condition according to the set illumination condition;
And a step of transferring the pattern onto the substrate through the projection optical system after the adjustment.
請求項1〜8のいずれか一項に記載の計測方法によって、前記投影光学系の状態の変化量と前記状態の変化に応じた特定の結像特性の変化量との関係を、結像特性調整情報として、前記マスクを照明する複数の照明条件の各々について予め求める工程を含むことを特徴とする露光装置の製造方法。An exposure apparatus manufacturing method for transferring a mask pattern onto a substrate via a projection optical system,
The measuring method according to any one of claims 1-8, the relationship between the change amount of a particular imaging characteristics in response to changes in the state variation of the state of the projection optical system, imaging characteristics A method of manufacturing an exposure apparatus, comprising: a step of obtaining each of a plurality of illumination conditions for illuminating the mask as adjustment information.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2002058118A JP2003218024A (en) | 2001-11-16 | 2002-03-05 | Method of measurement, method of imaging characteristics adjustment, method of exposure, and method of manufacturing exposure apparatus |
Applications Claiming Priority (3)
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JP2001-350970 | 2001-11-16 | ||
JP2001350970 | 2001-11-16 | ||
JP2002058118A JP2003218024A (en) | 2001-11-16 | 2002-03-05 | Method of measurement, method of imaging characteristics adjustment, method of exposure, and method of manufacturing exposure apparatus |
Publications (2)
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JP2003218024A JP2003218024A (en) | 2003-07-31 |
JP2003218024A5 true JP2003218024A5 (en) | 2005-09-08 |
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JP2002058118A Pending JP2003218024A (en) | 2001-11-16 | 2002-03-05 | Method of measurement, method of imaging characteristics adjustment, method of exposure, and method of manufacturing exposure apparatus |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003289427A1 (en) * | 2002-12-24 | 2004-07-22 | Nikon Corporation | Aberration measuring method, exposure method and exposure system |
JP3880589B2 (en) | 2004-03-31 | 2007-02-14 | キヤノン株式会社 | Position measuring apparatus, exposure apparatus, and device manufacturing method |
WO2005124834A1 (en) * | 2004-06-22 | 2005-12-29 | Nikon Corporation | Best focus detecting method, exposure method and exposure equipment |
US20060219947A1 (en) * | 2005-03-03 | 2006-10-05 | Asml Netherlands B.V. | Dedicated metrology stage for lithography applications |
US8547522B2 (en) | 2005-03-03 | 2013-10-01 | Asml Netherlands B.V. | Dedicated metrology stage for lithography applications |
JP4798353B2 (en) * | 2005-12-27 | 2011-10-19 | 株式会社ニコン | Optical characteristic measuring method and pattern error measuring method |
JP4793683B2 (en) * | 2006-01-23 | 2011-10-12 | 株式会社ニコン | Calculation method, adjustment method, exposure method, image forming state adjustment system, and exposure apparatus |
US20090002656A1 (en) * | 2007-06-29 | 2009-01-01 | Asml Netherlands B.V. | Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus |
JP5508734B2 (en) * | 2009-02-09 | 2014-06-04 | 大日本スクリーン製造株式会社 | Pattern drawing apparatus and pattern drawing method |
NL2007477A (en) | 2010-10-22 | 2012-04-24 | Asml Netherlands Bv | Method of optimizing a lithographic process, device manufacturing method, lithographic apparatus, computer program product and simulation apparatus. |
JP5518124B2 (en) * | 2012-04-26 | 2014-06-11 | キヤノン株式会社 | Aberration measuring method, exposure apparatus and device manufacturing method |
KR102271053B1 (en) * | 2019-10-31 | 2021-06-30 | 고려대학교 산학협력단 | Point scan type imaging apparatus for imaging target object within media witch bring about aberration |
CN116577075B (en) * | 2023-07-10 | 2023-10-03 | 睿励科学仪器(上海)有限公司 | Objective lens telecentricity measuring system, method and storage medium |
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2002
- 2002-03-05 JP JP2002058118A patent/JP2003218024A/en active Pending
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