JP2003213483A - METHOD OF FORMING Re-Cr ALLOY FILM BY ELECTROPLATING USING ALKALI OR ALKALINE-EARTH METALLIC ION-CONTAINING BATH - Google Patents
METHOD OF FORMING Re-Cr ALLOY FILM BY ELECTROPLATING USING ALKALI OR ALKALINE-EARTH METALLIC ION-CONTAINING BATHInfo
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000009713 electroplating Methods 0.000 title claims abstract description 20
- 229910000599 Cr alloy Inorganic materials 0.000 title claims abstract description 12
- 239000003513 alkali Substances 0.000 title description 2
- 238000007747 plating Methods 0.000 claims abstract description 29
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 13
- -1 chromium (III) ions Chemical class 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 239000011651 chromium Substances 0.000 claims abstract description 7
- 239000007864 aqueous solution Substances 0.000 claims abstract description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 5
- 239000011591 potassium Substances 0.000 claims abstract description 5
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 5
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 4
- 239000011575 calcium Substances 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 10
- 150000007524 organic acids Chemical class 0.000 claims description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 19
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 239000000243 solution Substances 0.000 abstract description 5
- 238000005240 physical vapour deposition Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000007751 thermal spraying Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 229910000691 Re alloy Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 235000001014 amino acid Nutrition 0.000 description 2
- 229940024606 amino acid Drugs 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001436 Cr3+ Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- BFGKITSFLPAWGI-UHFFFAOYSA-N chromium(3+) Chemical compound [Cr+3] BFGKITSFLPAWGI-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 235000002374 tyrosine Nutrition 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高温装置部材用の
耐食合金皮膜などに用いられるRe-Cr合金皮膜の形成方
法に関わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a Re-Cr alloy film used as a corrosion resistant alloy film for high temperature equipment members.
【0002】[0002]
【従来の技術】ジエットエンジンやガスタービンのブレ
ードなどに用いられるNi基超合金基材は耐酸化性や耐腐
食性が強く求められる。このため、表面にAl等の拡散処
理を行い、例えば、Al2O3皮膜を施して高温耐酸化性を
得ている。しかし、その性能は十分ではなく、基材にPt
などを用いた拡散バリヤーを設けるなどの手段が開発さ
れている。この拡散バリヤー層としてReを用いると耐高
温腐食性が向上させることができる。また、Reは、耐熱
衝撃性に優れ、ロケットエンジンの燃焼器などの各種燃
焼器や高温用ノズルなどの高温部材として使用されてい
る。これまで、Re皮膜やRe合金皮膜の形成方法としては
下記のようなものが知られている。2. Description of the Related Art Ni-based superalloy substrates used for jet engines, gas turbine blades, etc. are strongly required to have oxidation resistance and corrosion resistance. Therefore, the surface is subjected to a diffusion treatment of Al or the like, and an Al 2 O 3 film is applied, for example, to obtain high temperature oxidation resistance. However, its performance is not sufficient, and Pt
Means such as providing a diffusion barrier using the above have been developed. When Re is used as the diffusion barrier layer, the high temperature corrosion resistance can be improved. Further, Re has excellent thermal shock resistance and is used as a high temperature member such as various combustors such as a rocket engine combustor and a high temperature nozzle. Heretofore, the following methods have been known as methods for forming a Re film or a Re alloy film.
【0003】(1)スパッタ法または物理蒸着法
膜厚や組成の制御が容易である一方、基材の大きさや
形状に制限が多い、装置が大掛かりで、操作も複雑で
ある、欠陥やき裂の多い皮膜が形成される、などの問
題点を持つ。
(2)溶射法
欠陥の多い皮膜が形成される、薄い膜(10μm以下)
の形成に不向きである、歩留まりが悪く不経済であ
る、などの問題点を持つ。
(3)Re合金の電解めっき方法
Re含有量が最高で50重量%(原子組成ではより低い割合
となる)のNi-Cr-ReやRe含有量が最高で85重量%(63原子
%)の電気接点用のRe-Ni合金のめっきなどが知られてい
るが、Reの含有量が低い。(1) Sputtering method or physical vapor deposition method While it is easy to control the film thickness and composition, there are many restrictions on the size and shape of the base material, the equipment is large-scale, the operation is complicated, and defects and cracks are generated. It has a problem that many films are formed. (2) Thermal spraying method Thin film (10 μm or less) where a film with many defects is formed.
It is not suitable for the formation of, the yield is poor and it is uneconomical. (3) Electroplating method for Re alloys Re content up to 50 wt% (lower atomic composition ratio) Ni-Cr-Re and Re content up to 85 wt% (63 atoms)
%) Re-Ni alloy plating for electrical contacts is known, but the Re content is low.
【0004】[0004]
【発明が解決しようとする課題】本発明は、スパッタ法
や物理蒸着法などでは解決できない複雑形状への施工を
可能にすると共に、溶射法では解決できない薄膜施工、
および、両者と比較して安価に、かつ簡便にRe-Cr合金
皮膜を電解めっきで形成する方法を提供する。DISCLOSURE OF THE INVENTION The present invention makes it possible to apply a complex shape which cannot be solved by a sputtering method or a physical vapor deposition method, and at the same time, a thin film construction which cannot be solved by a thermal spraying method,
In addition, a method for forming a Re-Cr alloy film by electrolytic plating more easily and cheaply than both methods is provided.
【0005】[0005]
【課題を解決するための手段】発明者らは、浴中に、適
当な種類および濃度のアルカリまたはアルカリ土類金属
イオンを含ませることで、過レニウム酸イオンの活量を
制御できることを見出した。それによって、皮膜組成を
自由に制御可能なRe-Cr合金皮膜の電解めっき方法を開
発した。The present inventors have found that the activity of perrhenate ion can be controlled by including an appropriate type and concentration of alkali or alkaline earth metal ion in the bath. . As a result, we have developed a method for electrolytic plating of Re-Cr alloy coatings whose coating composition can be freely controlled.
【0006】すなわち、本発明は、過レニウム酸イオンを0.
0001mol/l以上2.0mol/l未満、クロム(III)イオンを0.00
1より多く10.0mol/l以下、かつ、カリウム、ルビジウ
ム、セシウム、カルシウム、ストロンチウム、バリウム
から選ばれる少なくとも1種以上のイオンを0.001以上1
0.0mol/l以下含有し、pHが0〜8、液温が10〜80℃である
水溶液からなるめっき浴を用いることを特徴とするRe-C
r合金の電解めっき方法であり、これによって、原子組
成が0<Re<98%の範囲で、皮膜組成を自由に制御する
ことが可能となる。[0006] That is, the present invention, the perrhenate ion to 0.
0001 mol / l or more and less than 2.0 mol / l, 0.003% chromium (III) ion
1 or more and 10.0 mol / l or less, and 0.001 or more 1 or more ions selected from potassium, rubidium, cesium, calcium, strontium, and barium.
Re-C characterized by using a plating bath made of an aqueous solution containing 0.0 mol / l or less, a pH of 0 to 8, and a liquid temperature of 10 to 80 ° C.
This is an electroplating method for r alloys, which makes it possible to freely control the film composition within the atomic composition range of 0 <Re <98%.
【0007】過レニウム酸イオンが0.0001mol/l未満では、
めっき中にReは含まれず、2.0mol/lより多いとめっき中
にCrが含まれなくなる。また、クロム(III)イオンが、
0.001mol/l以下では、めっき中にCrが含まれず、10.0mo
l/lより多いと不溶性物を生じて液の流動性が損なわれ
る。When the perrhenate ion is less than 0.0001 mol / l,
Re is not contained in the plating, and if it is more than 2.0 mol / l, Cr is not contained in the plating. In addition, chromium (III) ions
At 0.001 mol / l or less, Cr is not included in the plating and 10.0 mo
If the amount is more than 1 / l, insoluble matter is produced and the fluidity of the liquid is impaired.
【0008】さらに、カリウム、ルビジウム、セシウム、カ
ルシウム、ストロンチウム、バリウムから選ばれる少な
くとも1種以上のイオン濃度が0.001mol/l未満では、ReO
4 -活量抑制の効果が小さく、10.0mol/lより多くしても
効果はそれ以上大きくならない。したがって、過レニウ
ム酸イオンを0.0001以上2.0mol/l未満、クロム(III)イ
オンを0.001より多く10.0mol/l以下、かつ、カリウム、
ルビジウム、セシウム、カルシウム、ストロンチウム、
バリウムから選ばれる少なくとも1種以上のイオン濃度
を0.001以上10.0mol/l以下に限定した。[0008] Further, potassium, rubidium, cesium, mosquito
A few selected from Lucium, Strontium and Barium
If the ion concentration of at least one kind is less than 0.001 mol / l, ReO
Four -The effect of suppressing the activity is small, even if it exceeds 10.0 mol / l
The effect does not increase any further. Therefore, over Renyu
Chromate (III) ion
ON greater than 0.001 and 10.0 mol / l or less, and potassium,
Rubidium, cesium, calcium, strontium,
Ion concentration of at least one selected from barium
Was limited to 0.001 or more and 10.0 mol / l or less.
【0009】めっき浴のpHは0〜8、めっきが行われる液温は
10〜80℃が好ましい。これらによって、被覆力が高く、
組成が均一なめっきが得られる。pHが0未満ではめっき
の被覆力が低下し、8より大きいと不溶性物質が多く液
の流動性が損なわれる。また、めっきが行われる液温が
10℃より低いと電解析出効率が著しく低下し、80℃より
高いと被覆力が低下する。したがって、浴のpHは0〜8、
めっきが行われる液温は10〜80℃に限定した。より好ま
しくは、浴のpHが2〜5、めっきが行われる温度が20〜40
℃である。[0009] The pH of the plating bath is 0 to 8, and the liquid temperature at which plating is performed is
10-80 degreeC is preferable. With these, the covering power is high,
Plating having a uniform composition can be obtained. When the pH is less than 0, the coating power of the plating is reduced, and when it is more than 8, the amount of insoluble substances is large and the fluidity of the solution is impaired. In addition, the temperature of the plating solution
If it is lower than 10 ° C, the electrolytic deposition efficiency is remarkably reduced, and if it is higher than 80 ° C, the covering power is lowered. Therefore, the pH of the bath is 0-8,
The liquid temperature at which plating is performed was limited to 10 to 80 ° C. More preferably, the pH of the bath is 2-5, the temperature at which the plating is performed is 20-40
℃.
【0010】また、本発明は、形成される合金皮膜の組成
が、原子組成で0%<Re<98%、不可避的な不純物を除
いて残りがCrであることを特徴とする上記の電解めっき
方法であり、これによって、被めっき材に、基材の種類
および目的に応じた機能を付与することが可能となる。Further, the present invention is characterized in that the composition of the alloy film to be formed is 0% <Re <98% in atomic composition, and the balance is Cr except for unavoidable impurities. This is a method, which makes it possible to give the material to be plated with a function according to the type and purpose of the base material.
【0011】また、本発明は、めっき浴が、有機酸を含有す
ることを特徴とする上記の電解めっき方法であり、これ
によって、皮膜組成の制御が容易になる。有機酸の種類
および濃度を特定することによって、より正確に皮膜組
成の制御を可能とする。有機酸濃度が、全金属イオン濃
度に対して0.1当量未満であると十分な効果は得られ
ず、15.0当量より多いと不溶性物を生じ、液の流動性を
損なう。したがって、有機酸濃度は0.1以上15.0当量以
下に限定した。[0011] Further, the present invention is the above-described electrolytic plating method, wherein the plating bath contains an organic acid, which facilitates control of the coating composition. By specifying the type and concentration of the organic acid, the film composition can be controlled more accurately. If the organic acid concentration is less than 0.1 equivalent relative to the total metal ion concentration, a sufficient effect cannot be obtained, and if it is more than 15.0 equivalent, an insoluble matter is produced and the fluidity of the liquid is impaired. Therefore, the organic acid concentration is limited to 0.1 or more and 15.0 equivalents or less.
【0012】有機酸は、ヒドロキシカルボン酸、カルボン酸
およびアミノ酸か選ばれた少なくとも1種であることが
好ましい。ヒドロキシカルボン酸は、乳酸、ヒドロキシ
酪酸、グリコール酸、マンデル酸、リンゴ酸、酒石酸、
グルコン酸、クエン酸またはこれらの可溶性塩から選ば
れた少なくとも1種であることが好ましい。カルボン酸
は、ギ酸、プロピオン酸、酢酸、シュウ酸、アクリル
酸、マロン酸、エチレンジアミン4酢酸またはこれらの
可溶性塩から選ばれた少なくとも1種であることが好ま
しい。アミノ酸は、グリシン、アラニン、プロリン、バ
リン、ロイシン、イソロイシン、メチオニン、セリン、
システイン、アスパラギン、グルタミン、チロシンから
選ばれた少なくとも1種であることが好ましい。[0012] The organic acid is preferably at least one selected from hydroxycarboxylic acids, carboxylic acids and amino acids. Hydroxycarboxylic acids include lactic acid, hydroxybutyric acid, glycolic acid, mandelic acid, malic acid, tartaric acid,
It is preferably at least one selected from gluconic acid, citric acid and soluble salts thereof. The carboxylic acid is preferably at least one selected from formic acid, propionic acid, acetic acid, oxalic acid, acrylic acid, malonic acid, ethylenediaminetetraacetic acid or their soluble salts. Amino acids include glycine, alanine, proline, valine, leucine, isoleucine, methionine, serine,
It is preferably at least one selected from cysteine, asparagine, glutamine and tyrosine.
【0013】また、本発明は、0.0001mol/l以上5.0mol/l以
下のアンモニウムイオンおよび/または0.0001mol/l以上
5.0mol/l以下のホウ酸を含有することを特徴とする上記
の電解めっき方法であり、これによって、浴を安定化
し、厚さの均一な皮膜形成を可能とする。アンモニウム
イオンまたはホウ酸が、0.0001mol/l未満ではめっき斑
が生じ、5.0mol/lより多いと不溶性物を生じ、液の流動
性を損なう。したがって、アンモニウムイオンおよびホ
ウ酸は0.0001mol/l以上5.0mol/l以下に限定した。[0013] The present invention also provides 0.0001 mol / l or more and 5.0 mol / l or less ammonium ions and / or 0.0001 mol / l or more.
The above electrolytic plating method is characterized by containing 5.0 mol / l or less of boric acid, which stabilizes the bath and enables formation of a film having a uniform thickness. When ammonium ion or boric acid is less than 0.0001 mol / l, plating spots are generated, and when it is more than 5.0 mol / l, insoluble matter is generated and the fluidity of the liquid is impaired. Therefore, ammonium ions and boric acid are limited to 0.0001 mol / l or more and 5.0 mol / l or less.
【0014】また、本発明は、めっき浴が、0.0001mol/l以
上5.0mol/l以下の臭素イオンを含有することを特徴とす
る上記の電解めっき方法であり、これによって、有毒な
塩素ガスの発生を抑制する。臭素イオン濃度が、0.0001
mol/l未満では、効果がみられず、5.0mol/lより大きい
とBrを主成分とするガスを発生してしまうため、臭素イ
オン濃度は0.0001mol/l以上5.0mol/l以下に限定した。[0014] The present invention is also the above electrolytic plating method, wherein the plating bath contains 0.0001 mol / l or more and 5.0 mol / l or less bromine ions, whereby a toxic chlorine gas Suppress the occurrence. Bromine ion concentration is 0.0001
If it is less than mol / l, no effect is seen, and if it is more than 5.0 mol / l, a gas containing Br as a main component is generated, so the bromine ion concentration is limited to 0.0001 mol / l or more and 5.0 mol / l or less. .
【0015】また、本発明は、めっき浴が、0.0001mol/l以
上5.0mol/l以下の硫酸イオン、0.0001mol/l以上5.0mol/
l以下の塩化物イオンを含有することを特徴とする上記
の電解めっき方法であり、これによって、液間電圧の低
下、およびめっきの被覆力向上が可能となると共に、安
定した皮膜組成を得ることができる。上記のイオンが0.
0001mol/l未満ではこれらの効果は不十分であり、5.0mo
l/lより多いと不溶性物を生じ、液の流動性を損なう。
したがって、これらのイオン濃度は0.0001mol/l以上5.0
mol/l以下に限定した。Further, the present invention, the plating bath, 0.0001mol / l or more 5.0mol / l or less sulfate ions, 0.0001mol / l or more 5.0mol / l
The above electrolytic plating method is characterized by containing less than or equal to 1 chloride ion, which makes it possible to reduce the voltage between liquids and improve the coating power of plating, and to obtain a stable coating composition. You can The above ion is 0.
If it is less than 0001mol / l, these effects are insufficient and 5.0mo
If it is more than 1 / l, insoluble matter will be generated and the fluidity of the liquid will be impaired.
Therefore, the concentration of these ions should be 0.0001 mol / l or more 5.0
Limited to mol / l or less.
【0016】[0016]
【実施例】実施例1
基材として銅板を脱脂洗浄して用いた。めっき液は、K+
イオン濃度を1.0mol/lとし、K+以外の浴成分として、Re
O4 -:0.1mol/l、Cr3+:0.5mol/l、酢酸:1.5mol/l、塩
化アンモニウム:0.5mol/l、臭化アンモニウム:0.5mol
/lを添加した水溶液からなるめっき浴を用いた。pHは硫
酸と水酸化ナトリウムで4に調整し、液温は35℃とし、
電流密度は100mA/cm2で電解めっきを行った。Example 1 A copper plate was used as a substrate after degreasing and cleaning. The plating solution is K +
The ion concentration was 1.0 mol / l, and as a bath component other than K + , Re
O 4 -: 0.1mol / l, Cr 3+: 0.5mol / l, acetic acid: 1.5 mol / l, ammonium chloride: 0.5 mol / l, ammonium bromide: 0.5 mol
A plating bath consisting of an aqueous solution added with / l was used. The pH was adjusted to 4 with sulfuric acid and sodium hydroxide, and the liquid temperature was 35 ° C.
Electrolytic plating was performed at a current density of 100 mA / cm 2 .
【0017】実施例2
K+イオン濃度を2.0mol/lとした以外は実施例1と同じ条
件で電解めっきした。
比較例1
K+イオン濃度を0mol/lとした以外は実施例1と同じ条件
で電解めっきした。Example 2 Electroplating was performed under the same conditions as in Example 1 except that the K + ion concentration was 2.0 mol / l. Comparative Example 1 Electroplating was performed under the same conditions as in Example 1 except that the K + ion concentration was 0 mol / l.
【0018】図1に、実施例と比較例のめっき皮膜組成と、
めっき浴中のK+濃度の関係を示す。これより、K+が多く
なるにしたがって、図1に示すように、めっき皮膜中の
Re濃度が低下する様子が分かる。[0018] FIG. 1 shows the plating film compositions of Examples and Comparative Examples,
The relationship of K + concentration in the plating bath is shown. From this, as the K + increases, as shown in Fig. 1, the
It can be seen that the Re concentration decreases.
【0019】[0019]
【発明の効果】高温装置部材用耐食合金皮膜などに用い
られるRe-Cr合金を、水溶液電解めっきによって形成で
きることで、複雑形状を持つ装置部材に対しても、簡便
に、かつ安価に耐熱・耐食性を付与することが可能とな
る。EFFECT OF THE INVENTION Since the Re-Cr alloy used for the corrosion resistant alloy film for high temperature equipment members can be formed by aqueous solution electroplating, heat resistance and corrosion resistance can be easily and inexpensively applied to equipment members having complicated shapes. Can be given.
【図1】図1は、実施例と比較例のめっき皮膜組成とめ
っき浴中のReO4 -とCr3+のモル濃度およびモル濃度比の
関係を示すグラフである。FIG. 1 is a graph showing the relationship between the plating film compositions of Examples and Comparative Examples, the molar concentrations of ReO 4 − and Cr 3+ in the plating bath, and the molar concentration ratio.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 成田 敏夫 北海道札幌市北区新琴似1条9−7−8 (72)発明者 林 重成 北海道札幌市中央区大通西18−1−36 イ ンフィニート大通801 (72)発明者 吉岡 隆幸 北海道札幌市北区北22条西3−1−23 フ ラワーN22 505 (72)発明者 八鍬 浩 神奈川県藤沢市本藤沢4−2−1 株式会 社荏原総合研究所内 (72)発明者 相馬 道明 北海道札幌市西区発寒6条5−2−21 コ ーポ6条201 Fターム(参考) 4K023 AB24 AB49 BA03 BA08 BA16 BA29 CA01 CA09 CB03 CB13 CB16 DA02 DA03 DA08 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Toshio Narita Shinkotoni 1-9-7-8, Kita-ku, Sapporo-shi, Hokkaido (72) Inventor Shigenari Hayashi 18-1-36 Odori Nishi, Chuo-ku, Sapporo-shi, Hokkaido Nfinito Odori 801 (72) Inventor Takayuki Yoshioka 2-1-23 Kita 22 Nishi, Kita-ku, Sapporo-shi, Hokkaido Lawr N22 505 (72) Inventor Hiroshi Yawa Fujisawa City, Kanagawa Prefecture Fujisawa 4-2-1 Stock Association Inside the Ebara Research Institute (72) Inventor Michiaki Soma 6-5-2-21 cold from Nishi-ku, Sapporo-shi, Hokkaido Article 6 201 F-term (reference) 4K023 AB24 AB49 BA03 BA08 BA16 BA29 CA01 CA09 CB03 CB13 CB16 DA02 DA03 DA08
Claims (6)
2.0mol/l未満、クロム(III)イオンを0.001より多く10.0
mol/l以下、かつ、カリウム、ルビジウム、セシウム、
カルシウム、ストロンチウム、バリウムから選ばれる少
なくとも1種以上のイオンを0.001以上10.0mol/l以下含
有し、pHが0〜8、液温が10〜80℃である水溶液からなる
めっき浴を用いることを特徴とする電解めっきによるRe
-Cr合金皮膜の形成方法。1. A perrhenate ion of 0.0001 mol / l or more
Less than 2.0 mol / l, more than 0.001 of chromium (III) ions 10.0
mol / l or less and potassium, rubidium, cesium,
Calcium, strontium, barium containing at least one or more ions of 0.001 or more and 10.0 mol / l or less, characterized by using a plating bath made of an aqueous solution having a pH of 0 to 8 and a liquid temperature of 10 to 80 ° C. Re by electrolytic plating
-Method of forming Cr alloy coating.
で0%<Re<98%、不可避的な不純物を除いて残りがCr
であることを特徴とする請求項1記載の電解めっきによ
るRe-Cr合金皮膜の形成方法。2. The composition of the alloy film formed is 0% <Re <98% in atomic composition, and the balance is Cr except for unavoidable impurities.
The method for forming a Re-Cr alloy film by electrolytic plating according to claim 1, wherein
0.1以上15.0当量以下の濃度の有機酸を含有することを
特徴とする電解めっきによるRe-Cr合金皮膜の形成方
法。3. The plating bath is based on the total metal ion concentration.
A method for forming a Re-Cr alloy film by electrolytic plating, which comprises a concentration of 0.1 to 15.0 equivalents inclusive of an organic acid.
以下のアンモニウムイオンおよび/または0.0001mol/l以
上5.0mol/l以下のホウ酸を含有することを特徴とする電
解めっきによるRe-Cr合金皮膜の形成方法。4. The plating bath is 0.0001 mol / l or more and 5.0 mol / l
A method for forming a Re-Cr alloy film by electrolytic plating, which comprises the following ammonium ions and / or 0.0001 mol / l or more and 5.0 mol / l or less boric acid.
以下の臭素イオンを含有することを特徴とする電解めっ
きによるRe-Cr合金皮膜の形成方法。5. The plating bath is 0.0001 mol / l or more and 5.0 mol / l
A method for forming a Re-Cr alloy film by electrolytic plating, which comprises the following bromine ions.
以下の硫酸イオン、0.0001mol/l以上5.0mol/l以下の塩
化物イオンを含有することを特徴とする電解めっきによ
るRe-Cr合金皮膜の形成方法。6. The plating bath is 0.0001 mol / l or more and 5.0 mol / l
A method for forming a Re-Cr alloy film by electrolytic plating, comprising the following sulfate ion and 0.0001 mol / l or more and 5.0 mol / l or less chloride ion.
Priority Applications (4)
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JP2002010764A JP2003213483A (en) | 2002-01-18 | 2002-01-18 | METHOD OF FORMING Re-Cr ALLOY FILM BY ELECTROPLATING USING ALKALI OR ALKALINE-EARTH METALLIC ION-CONTAINING BATH |
US10/501,720 US6979392B2 (en) | 2002-01-18 | 2003-01-17 | Method for forming Re—Cr alloy film or Re-based film through electroplating process |
PCT/JP2003/000353 WO2003062500A1 (en) | 2002-01-18 | 2003-01-17 | METHOD FOR FORMING Re COATING FILM OR Re-Cr ALLOY COATING FILM THROUGH ELECTROPLATING |
EP03701766A EP1467001A4 (en) | 2002-01-18 | 2003-01-17 | METHOD FOR FORMING Re COATING FILM OR Re-Cr ALLOY COATING FILM THROUGH ELECTROPLATING |
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JP2002010764A JP2003213483A (en) | 2002-01-18 | 2002-01-18 | METHOD OF FORMING Re-Cr ALLOY FILM BY ELECTROPLATING USING ALKALI OR ALKALINE-EARTH METALLIC ION-CONTAINING BATH |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008059971A1 (en) | 2006-11-16 | 2008-05-22 | National University Corporation Hokkaido University | Multilayer alloy coating film, heat-resistant metal member having the same, and method for producing multilayer alloy coating film |
US8173269B2 (en) | 2006-12-22 | 2012-05-08 | Dbc System Co., Ltd. | Alloy coating film, method for production of alloy coating film, and heat-resistant metal member |
-
2002
- 2002-01-18 JP JP2002010764A patent/JP2003213483A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008059971A1 (en) | 2006-11-16 | 2008-05-22 | National University Corporation Hokkaido University | Multilayer alloy coating film, heat-resistant metal member having the same, and method for producing multilayer alloy coating film |
US8133595B2 (en) | 2006-11-16 | 2012-03-13 | National University Corporation Hokkaido University | Multilayer alloy coating film, heat-resistant metal member having the same, and method for producing multilayer alloy coating film |
US8173269B2 (en) | 2006-12-22 | 2012-05-08 | Dbc System Co., Ltd. | Alloy coating film, method for production of alloy coating film, and heat-resistant metal member |
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