JP2003207671A - ポストアニーリングと反転陽子交換とを伴う気相陽子交換工程による高品質導波路の形成方法 - Google Patents

ポストアニーリングと反転陽子交換とを伴う気相陽子交換工程による高品質導波路の形成方法

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Publication number
JP2003207671A
JP2003207671A JP2002317687A JP2002317687A JP2003207671A JP 2003207671 A JP2003207671 A JP 2003207671A JP 2002317687 A JP2002317687 A JP 2002317687A JP 2002317687 A JP2002317687 A JP 2002317687A JP 2003207671 A JP2003207671 A JP 2003207671A
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JP
Japan
Prior art keywords
waveguide
proton exchange
vpe
vapor phase
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002317687A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003207671A5 (enExample
Inventor
Der-Hou Tsou
デア−ホウ・ツォウ
Shang-Yi Wu
シャン−イ・ウー
Ming-Heng Chen
ミン−ヘン・チェン
Ming-Hsien Chou
ミン−シェン・チョウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Photonics Corp
Original Assignee
HC Photonics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Photonics Corp filed Critical HC Photonics Corp
Publication of JP2003207671A publication Critical patent/JP2003207671A/ja
Publication of JP2003207671A5 publication Critical patent/JP2003207671A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2002317687A 2002-01-09 2002-10-31 ポストアニーリングと反転陽子交換とを伴う気相陽子交換工程による高品質導波路の形成方法 Pending JP2003207671A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042,570 US20030127042A1 (en) 2002-01-09 2002-01-09 Method of forming high quality waveguides by vapor-phase proton-exchange process with post-thermal annealing and reversed proton-exchange
US10/042570 2002-01-09

Publications (2)

Publication Number Publication Date
JP2003207671A true JP2003207671A (ja) 2003-07-25
JP2003207671A5 JP2003207671A5 (enExample) 2007-01-18

Family

ID=21922639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002317687A Pending JP2003207671A (ja) 2002-01-09 2002-10-31 ポストアニーリングと反転陽子交換とを伴う気相陽子交換工程による高品質導波路の形成方法

Country Status (2)

Country Link
US (1) US20030127042A1 (enExample)
JP (1) JP2003207671A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160149208A (ko) 2014-05-09 2016-12-27 신에쓰 가가꾸 고교 가부시끼가이샤 압전성 산화물 단결정 기판
KR20170137743A (ko) 2015-04-16 2017-12-13 신에쓰 가가꾸 고교 가부시끼가이샤 탄탈산리튬 단결정 기판 및 이것의 접합 기판과 이 제조법 및 이 기판을 사용한 탄성 표면파 디바이스
DE102018217999A1 (de) 2017-10-20 2019-04-25 Shin-Etsu Chemical Co., Ltd. Lithiumtantalat-Einkristallsubstrat, gebondetes Substrat, Herstellungsverfahren des gebondeten Substrats und eine akustische Oberflächenwellenvorrichtung, die das gebondete Substrat verwendet
US10707829B2 (en) 2015-01-15 2020-07-07 Shin-Etsu Chemical Co., Ltd. Lithium tantalate single crystal substrate for a surface acoustic wave device and a device using the same, and a manufacturing method thereof and an inspection method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170671B2 (en) * 2004-08-24 2007-01-30 Hc Photonics Corporation High efficiency wavelength converters
KR100878978B1 (ko) 2007-01-12 2009-01-19 광주과학기술원 레이저를 이용한 피피엘엔 도파로 소자의 제조 방법
US8189981B2 (en) * 2009-11-23 2012-05-29 The Aerospace Corporation Stable lithium niobate waveguides, and methods of making and using same
FR3051979B1 (fr) * 2016-05-25 2018-05-18 Soitec Procede de guerison de defauts dans une couche obtenue par implantation puis detachement d'un substrat
CN110286439B (zh) * 2019-07-02 2020-07-24 山东大学 采用质子交换方法在渐变周期极化钽酸锂上形成光波导量子芯片的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519802A (en) * 1994-05-09 1996-05-21 Deacon Research Method for making devices having a pattern poled structure and pattern poled structure devices
US5654229A (en) * 1995-04-26 1997-08-05 Xerox Corporation Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films
US6650819B1 (en) * 2000-10-20 2003-11-18 Konstantin P. Petrov Methods for forming separately optimized waveguide structures in optical materials

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160149208A (ko) 2014-05-09 2016-12-27 신에쓰 가가꾸 고교 가부시끼가이샤 압전성 산화물 단결정 기판
US10361357B2 (en) 2014-05-09 2019-07-23 Shin-Etsu Chemical Co., Ltd. Piezoelectric oxide single crystal substrate
US10707829B2 (en) 2015-01-15 2020-07-07 Shin-Etsu Chemical Co., Ltd. Lithium tantalate single crystal substrate for a surface acoustic wave device and a device using the same, and a manufacturing method thereof and an inspection method thereof
KR20170137743A (ko) 2015-04-16 2017-12-13 신에쓰 가가꾸 고교 가부시끼가이샤 탄탈산리튬 단결정 기판 및 이것의 접합 기판과 이 제조법 및 이 기판을 사용한 탄성 표면파 디바이스
US11021810B2 (en) 2015-04-16 2021-06-01 Shin-Etsu Chemical Co., Ltd. Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
DE102018217999A1 (de) 2017-10-20 2019-04-25 Shin-Etsu Chemical Co., Ltd. Lithiumtantalat-Einkristallsubstrat, gebondetes Substrat, Herstellungsverfahren des gebondeten Substrats und eine akustische Oberflächenwellenvorrichtung, die das gebondete Substrat verwendet
KR20190044504A (ko) 2017-10-20 2019-04-30 신에쓰 가가꾸 고교 가부시끼가이샤 리튬 탄탈레이트 단결정 기판, 접합 기판, 접합 기판의 제조 방법, 및 접합 기판을 사용한 탄성 표면파 디바이스

Also Published As

Publication number Publication date
US20030127042A1 (en) 2003-07-10

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