JP2003207406A - Semiconductor sensor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor device with improved detection precision of temperature by further improving linearity in a temperature-voltage characteristics which represents relationship between temperature and output voltage. <P>SOLUTION: A pressure guiding part 1a comprises a pressure guiding hole 1c to guide in a fluid. A base plate 3 is provided with; a hole 3c to transmit the pressure and temperature of the fluid to a semiconductor sensor 4; and a mounting part 3b on which the semiconductor sensor 4 is disposed. By bonding a flange part 3a extended from the mounting part 3b to the pressure guiding part 1a, one end of the pressure guiding hole 1c is closed. A circuit board 5 is disposed on the base plate 3, and comprises a housing hole 5a to house the semiconductor sensor 4 with which the board 5 is electrically connected. A constant current source circuit 20 supplies a prescribed constant current to a bridge circuit 21. A temperature characteristics adjusting means 20g adjusts temperature characteristics, and is so disposed on the circuit board 5 as to be close to the base plate 3. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor sensor device using a semiconductor sensor in which a pressure sensitive element having a piezoresistive effect is formed on a semiconductor substrate and a bridge circuit is formed by using the pressure sensitive element. is there.

[0002]

2. Description of the Related Art A semiconductor sensor device is a semiconductor type device in which a thin diaphragm portion is formed on a semiconductor substrate made of silicon or the like, and a pressure detecting element having a piezoresistive effect is formed in a bridge shape on the diaphragm portion. A pressure sensor (semiconductor sensor) is arranged on the upper end of a pressure introduction port provided in the lower case via a base plate, and the pressure sensor and the circuit board are electrically connected by wire bonding to connect the circuit board. There is a pressure detection device in which the pressure sensor and the circuit board are covered by an upper case having a lead pin for supplying power to the pressure sensor and outputting a signal from the pressure sensor via the pressure sensor.

In such a pressure detecting device, for example, an engine of a vehicle may be an object to be measured. When the engine is the object to be measured, there is a demand for a pressure temperature detection device capable of detecting not only the pressure of engine oil (hereinafter referred to as oil pressure) but also the temperature of the engine oil (hereinafter referred to as oil temperature). An example of such a pressure temperature detecting device is disclosed in Japanese Patent Laid-Open No. 11-72402.

In such a pressure temperature detecting device, a temperature detecting means such as a thermistor is arranged in a case in which a pressure sensor is arranged so that the oil temperature can be detected, and the pressure sensor and the temperature detecting means are combined into a single unit. By disposing it in the case, it becomes possible to detect different objects to be measured (oil pressure and oil temperature).

However, in the pressure-temperature detection device for detecting different objects to be measured from a single object to be measured,
Although the mounting of the device to the engine is simplified, since the pressure sensor and the temperature detecting means are respectively arranged in the case, not only the structure as the pressure temperature detecting device becomes complicated, but also However, there is a problem that the device becomes large due to the large number of constituent parts.

Therefore, the applicant of the present application has proposed, in Japanese Patent Application No. 2001-185737, a semiconductor sensor device capable of detecting pressure and temperature with a simple structure without complicating the structure. In such a semiconductor sensor device, a pressure-sensitive element having a piezoresistive effect is formed on a semiconductor substrate, a bridge circuit is formed by using the pressure-sensitive element, and a semiconductor sensor having a thin diaphragm portion, and the semiconductor sensor, A circuit board electrically connected to the circuit board, and outputs a first detection signal relating to pressure and a second detection signal relating to temperature to the circuit board based on an output from a single semiconductor sensor; It comprises a second output section.

[0007]

However, in the semiconductor sensor device, the output voltage characteristic T1 showing the relationship between the temperature and the output voltage has a detection temperature range (-40 ° C. to 125 ° C.) as shown by the solid line in FIG. Since there is a non-linearity in which the output voltage decreases in the middle of the temperature range (° C.), And a slight error may occur in the detected temperature, the output voltage characteristic T1 is a linear output voltage characteristic T2 as shown by the dotted line in FIG. Improvements that should be made are desired.

In view of the above-mentioned problems, the present invention is capable of detecting pressure and temperature with a simple structure without complicating the structure, and an output voltage characteristic showing a relationship between temperature and output voltage. The present invention provides a semiconductor sensor device capable of improving the temperature detection accuracy by further linearizing.

[0009]

In order to solve the above problems, the present invention forms a pressure sensitive element having a piezoresistive effect on a semiconductor substrate as in the semiconductor sensor device according to claim 1, A semiconductor sensor that forms a bridge circuit using a pressure-sensitive element and obtains a first detection signal related to the pressure of a fluid and a second detection signal related to the temperature of the fluid by a single semiconductor sensor having a thin diaphragm portion. An apparatus for mounting a semiconductor sensor, the pressure sensor having an inlet for introducing the fluid, and a hole for transmitting the pressure and temperature of the fluid to the semiconductor sensor. A base plate disposed in a state of closing one end of the introduction port by joining a flange portion extended from the mounting portion to the pressure introduction portion, and is located on the base plate, The above A circuit board having a housing hole for housing a conductor sensor and electrically connected to the semiconductor sensor, a constant current source circuit provided on the circuit board and supplying a predetermined constant current to the bridge circuit, The second
In addition to adjusting the temperature characteristic of the detection signal, the temperature characteristic adjusting means is disposed on the circuit board in a state of being located in the vicinity of the base plate.

According to the invention of claim 2, like the semiconductor sensor device according to claim 2, the temperature characteristic adjusting means has at least a thermistor and a positive temperature coefficient resistor.

Further, according to the present invention, as in the semiconductor sensor device according to the third aspect, the temperature characteristic adjusting means is arranged at a position facing the flange portion of the circuit board.

Further, according to the present invention, as in a semiconductor sensor device according to a fourth aspect, a heat transfer member is arranged between the collar portion and the temperature characteristic adjusting means.

Further, according to the present invention, as in the semiconductor sensor device according to a fifth aspect, the mounting portion is provided at a position higher than the collar portion by at least one step.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings.

In FIG. 1, a pressure / temperature detecting device A as a semiconductor sensor device comprises a lower case 1, an upper case 2,
It is mainly composed of a base plate 3, a semiconductor sensor 4, a circuit board 5, a shield plate 6, and a grommet 7.

The lower case 1 is a pressure introducing portion 1a which is a hexagonal member having a mounting screw portion made of a metal material such as SUM.
And a flange portion 1b made of a resin material such as PBT, and the pressure introducing portion 1a and the flange portion 1b are integrally formed by insert molding. A pressure introducing hole (introducing port) 1c is formed substantially in the center of the pressure introducing portion 1a.

The upper case 2 is made of a resin material such as PBT, and is fixedly arranged by thermally crimping the open end of the upper case 2 to the flange portion 1b of the lower case 1, and the base plate 3, The semiconductor sensor 4, the circuit board 5, etc. are housed. Further, the upper case 2 is provided with a connector portion 2a for supplying power and outputting signals via electrode leads described later.

The base plate 3 is made of a metal material such as Kovar, and is provided with a flange portion (flange portion) 3a for disposing and fixing the pressure introducing portion 1a in the lower case 1 by resistance welding. A mounting portion 3b for disposing the pressure sensor 4 is provided at a position higher than the flange portion 3a. Further, in the substantial center of the mounting portion 3b,
The semiconductor sensor 4 is provided with a hole 3c for transmitting the pressure and temperature of the object to be measured. The base plate 3 is disposed and fixed to the upper end portion of the pressure introducing portion 1a by resistance welding, so that the base plate 3 is disposed in the lower case 1 in a state of closing one end of the pressure introducing hole 1c.

The flange portion 3a of the base plate 3
May have a simple step shape as long as it can be resistance-welded to the pressure introducing portion 1a.

In the semiconductor sensor 4, a semiconductor chip 4a forming a thin diaphragm portion is provided on a glass substrate 4b on a semiconductor substrate made of silicon or the like, and the semiconductor chip 4a is formed.
And the glass pedestal 4c are joined by an anodic joining method. The semiconductor sensor 4 diffuses impurities such as boron in a portion corresponding to the diaphragm portion to form resistors which become four pressure sensitive elements having a piezoresistive effect, and these resistors are made of a conductive material such as aluminum. A bridge circuit, which will be described in detail later, is configured by connecting with a wiring pattern using a material.

The semiconductor sensor 4 has a metallized layer formed on the back surface of the glass substrate 4b and is joined to the base plate 3 via solder.

The circuit board 5 is a double-sided printed circuit board in which an insulating material such as paper phenol, resin containing glass fiber, and ceramics is used as a supporting material, and predetermined wiring patterns for obtaining a circuit configuration described later are formed on the front and back surfaces. Yes, base plate 3
The mounting portion 1d is provided above the flange portion 1b of the lower case 1 so as to be located above. The circuit board 5
Various electronic components (amplification circuit for amplifying the output voltage of the semiconductor sensor 4, a capacitor for removing noise, etc.), which are components of a circuit configuration described in detail later, are mounted.

In addition, the circuit board 5 has a peripheral portion of the lower case 1
The mounting structure is supported by the mounting portion 1d of the circuit board 5, and the circuit board 5 is arranged in the lower case from above the semiconductor sensor 4 disposed on the mounting portion 3b of the base plate 3 in the approximate center of the circuit board 5. When the circuit board 5 is mounted on the mounting portion 1d of the semiconductor sensor 4 of FIG.
A storage hole portion 5a for arranging so as to surround is formed.

A plurality of electrode portions are formed around the storage hole portion 5a on the surface of the circuit board 5, and the electrode portions and the electrode pads (electrode portions) formed on the semiconductor sensor 4 are made of gold or the like. It is electrically connected by a wire 8 made of a conductive material. Further, in the vicinity of the storage hole 5a on the back surface of the circuit board 5, a detailed output voltage characteristic T2 (see FIG. 9) showing the relationship between the temperature and the output voltage in the pressure temperature detection device A will be described later in detail. Soldering lands and wiring patterns for arranging the above-mentioned temperature characteristic adjusting means near the base plate 3 are formed.

On the circuit board 5, there are mounted lead pins 11 which are electrically connected to the connector lead 2a of the upper case 2 via the grommet 7 and the lead-through capacitor 10 with lead pins. There is.

The shield plate 6 is made of a metal material such as SPTE, and is provided with a holder portion 6a and a flange portion 6b to be sandwiched between the lower case 1 and the upper case 2. There is.

The holder portion 6a is provided at a position one step higher than the mounting surface of the grommet 7, and the through capacitor 10 is provided.
Is formed, and a plurality of holes are formed in the arrangement part 6c, and the feedthrough capacitors 10 are arranged and fixed in the holes by soldering. .

The grommet 7 is made of an elastic material such as nitrile rubber, and the electrode leads 9 are insert-formed. The grommet 7 is the connector portion 2 of the upper case 2.
The electrode lead 9 is inserted into the hole 2c provided in the recess 2b provided in the a, and the grommet 7 is provided in the recess 2b.
By being fitted into the holder plate 6a of the shield plate 6, the shield plate 6 is disposed on the mounting surface which is lower than the holder portion 6a.

The electrode lead 9 which is insert-molded in the grommet 7 is for supplying power to the semiconductor sensor 4 and a detection signal from the semiconductor sensor 4 regarding pressure and temperature described later to the outside.

A pressure temperature detecting device A is constituted by the above-mentioned respective parts. Next, the circuit configuration of the pressure temperature detection device A will be described with reference to FIG. The circuit configuration of the pressure temperature detection device A includes a constant current source circuit 20, a bridge circuit 21, a pressure detection amplification circuit 22, and a temperature detection amplification circuit 23. Each circuit other than the bridge circuit 21 is a circuit board. 5
Composed on.

The constant current source circuit 20 includes a constant current source adjusting resistor 20a, an operational amplifier 20b, a positive temperature coefficient adjusting resistor 20c, a positive temperature coefficient resistor 20d, a thermistor 20e and a thermistor characteristic adjusting resistor 20f. It is composed of the characteristic adjusting means 20g and supplies a predetermined constant current to the bridge circuit 21. The positive temperature coefficient resistor 20d is a resistor having a characteristic that the resistance value increases linearly as the temperature rises.

The temperature characteristic adjusting means 20g includes a thermistor 20e, a positive temperature coefficient resistor 20d and a positive temperature coefficient adjusting resistor 20c which are connected in series to the power source Vcc, and a thermistor characteristic adjustment which is connected in parallel to the thermistor 20e. Resistor 20f for use.

The bridge circuit 21 is composed of four pressure sensitive elements Ra, Rb, Rc and Rd which are formed on the diaphragm portion of the semiconductor sensor 4. In the bridge circuit 21, the intermediate voltages va and vb respectively drawn from the first resistance group Ra and Rb and the second resistance group Rc and Rd connected in series are supplied to the pressure detection amplification circuit 22.

The pressure detecting / amplifying circuit 22 is composed of an amplifying circuit which is less influenced by the input impedance, and has a first output voltage which is a pressure-voltage characteristic showing the relationship between the pressure and the output voltage V1 shown in FIG. A gain adjusting resistor 22a for performing the gain adjustment of the characteristic T3, an offset voltage adjusting resistor 22b for performing the offset adjustment of the first output voltage characteristic T3, and intermediate voltages va and vb in the bridge circuit 21 are input respectively. It is composed of first and second operational amplifiers 22c and 22d. Pressure detection amplifier circuit 2
2 receives the intermediate voltages v1 and v2, the intermediate voltages v1 and
Amplify the difference between v2 and output voltage (first detection signal) V1
Is output and pressure is detected.

The temperature detecting / amplifying circuit 23 is a bridge circuit 2
The second output, which is a temperature-voltage characteristic showing the relationship between the temperature and the output voltage V2 shown in FIG. 4, is obtained by amplifying the voltage vc between both ends of 1 and extracting as the output voltage (second detection signal) V2. A gain adjusting resistor 23a for performing a gain adjustment for adjusting the slope of the voltage characteristic T4, an offset voltage adjusting resistor 23b for performing an offset adjustment of the second output voltage characteristic T4, and a voltage v across the bridge circuit 21.
It is composed of an operational amplifier 23c and the like which inputs c and amplifies it by a predetermined magnification.

Next, the operation of the constant current source circuit 20 will be described in detail. The combined resistance of the positive temperature coefficient adjusting resistor 20c and the positive temperature coefficient resistor 20d has a temperature-resistance value characteristic (hereinafter referred to as characteristic T5; see FIG. 5) in which the resistance value increases as the temperature rises. The combined resistance of the thermistor 20e and the thermistor characteristic adjusting resistor 20f has a temperature-resistance value characteristic (hereinafter referred to as characteristic T6; refer to FIG. 6) in which the resistance value decreases in inverse proportion as the temperature rises. . Therefore, in the constant current source circuit 20, each characteristic T
Each resistor 20a, 20c, 20d, 20 including 5, T6
The combined resistance of e and 20f is a non-linear (convex characteristic curve) temperature-resistance value characteristic in which the output voltage becomes low in the approximate middle of the detection temperature range (-40 ° C to 125 ° C) as shown in FIG. 7. (Hereinafter, referred to as characteristic T7), the reference voltage vd of the constant current source circuit 20 is non-linear (convex upward) as shown in FIG. 8 in which the output voltage is increased substantially in the middle of the detected temperature range. The output voltage characteristic T8 is a characteristic curve).

Therefore, the second output voltage characteristic T4, which is the temperature-voltage characteristic showing the relationship between the temperature and the output voltage V2, is obtained by performing temperature compensation by the temperature characteristic adjusting means 20g provided in the constant current source circuit 20. It becomes substantially linear as shown in FIG. That is, if the constant current supplied from the constant current source circuit is a constant voltage, the second output voltage characteristic T4 is as shown in FIG.
As indicated by the output voltage characteristic T1 shown by, the output voltage decreases in the middle of the detection temperature range, but the constant current supplied from the constant current source circuit 20 has a characteristic of increasing in the middle of the detection temperature range. , The second output voltage characteristic T4 is temperature-compensated, the second output voltage characteristic T4 becomes substantially linear, and the temperature detection accuracy is improved.

That is, since the voltage vc across the bridge circuit 21 constituting the semiconductor sensor 4 has a downwardly convex non-linear output voltage characteristic T1 as shown in FIG. 9, it is as shown in FIG. The reference voltage Vd of the constant current source circuit 20 having an upwardly convex non-linear characteristic T8 having an inverse relationship with the output voltage characteristic T1 is applied to the bridge circuit 2 of the semiconductor sensor 4.
1 is applied to the linear output voltage characteristic T4 such as the output voltage characteristic T2 having the ideal linearity shown in FIG.
The both-end voltage vc based on (see FIG. 4) is obtained.

In order to make the output voltage characteristic T4 more linear, the thermistor for detecting the temperature (for example, oil temperature) of the object to be measured which is the most important for temperature compensation among the components of the temperature characteristic adjusting means 20g. 20e and the positive temperature coefficient resistor 20d can be achieved by arranging them on the back surface side of the circuit board 5 and in the vicinity of the base plate 3 which is the surface facing the flange portion 3a of the base plate 3. (See Figure 1).

That is, by disposing the thermistor 20e in the vicinity of the base plate 3 most susceptible to the temperature of the object to be measured, the temperature of the environment in which the semiconductor sensor 4 is placed is approximately the same as the temperature of the thermistor. It is possible to detect with the 20e, and it is possible to satisfactorily obtain the characteristic (see FIG. 6) T6 in which the resistance value decreases in inverse proportion as the temperature rises.

The positive temperature coefficient resistor 20d is also connected to the base plate 3
Since the resistance value of the positive temperature coefficient resistor 20d is arranged in the vicinity of, it is possible to favorably obtain the characteristic T5 (see FIG. 5) in which the resistance value increases as the temperature increases.

Therefore, in the constant current source circuit 20, the resistors 20a, 20c, 20d, 2 including the characteristics T5, T6 are included.
Since the combined resistance of 0e and 20f makes it possible to obtain a good characteristic T7 according to the detected temperature of the object to be detected, the reference voltage vd of the constant current source circuit 20 also depends on the detected temperature of the object to be measured. Since a good output voltage characteristic T8 can be obtained, a more linear output voltage characteristic T4 can be obtained, and the temperature detection accuracy can be further improved.

In the pressure / temperature detecting device A, a pressure sensitive element having a piezoresistive effect is formed on a semiconductor substrate, and a bridge circuit 21 is formed by using the pressure sensitive element.
A single semiconductor sensor 4 having a thin diaphragm portion is used to obtain a first detection signal relating to the pressure of the fluid and a second detection signal relating to the temperature of the fluid, and a pressure introducing hole 1c for introducing the fluid. A pressure introducing portion 1a, and a mounting portion 3b in which the semiconductor sensor 4 is provided with a hole 3c for transmitting the pressure and temperature of the fluid, and the semiconductor sensor 4 is disposed. A base plate 3 arranged so as to close one end of the pressure introducing hole 1c by joining the provided flange portion 3a with the pressure introducing portion 1a, and a storage located on the base plate 3 for storing the semiconductor sensor 4. A circuit board 5 having a hole 5a and electrically connected to the semiconductor sensor 4, and a constant current source circuit 20 provided on the circuit board 5 and supplying a predetermined constant current to the bridge circuit 21.
And a temperature characteristic adjusting means 20g for adjusting the temperature characteristic of the second detection signal and arranged on the circuit board 5 in a state of being located in the vicinity of the base plate 3,
The pressure and temperature can be detected with a simple configuration without complicating the structure, and the temperature detection accuracy is improved by making the output voltage characteristic T4 showing the relationship between the temperature and the output voltage more linear. Can be made.

Further, since the temperature characteristic adjusting means 20g has at least the thermistor 20e and the positive temperature coefficient resistor 20d, the temperature characteristic adjusting means 20g can be constructed with a simple structure and at a low cost.

Further, the base plate 3 is provided at a position where the mounting portion 3b is one step higher than the flange portion 3a, and at a position facing the flange portion 3a of the base plate 3 of the circuit board 5, that is, the flange portion 3a. The temperature characteristic adjusting means 20 is provided on the back surface side of the circuit board 5 corresponding to the step between the mounting portion 3b and the mounting portion 3b.
Since the thermistor 20e, which is g, and the positive temperature coefficient resistor 20d are disposed, the thermistor 20e and the positive temperature coefficient resistor 20d are disposed closest to the base plate 3 most susceptible to the temperature of the object to be measured. Therefore, the output voltage characteristic T4 can be made more linear.

The circuit configurations of the pressure detection amplification circuit 22 and the temperature detection amplification circuit 23, which are the first and second output sections of the present invention, are limited to the circuit configurations described in the embodiments of the present invention. However, the circuit configuration is not limited to this, and may be any circuit configuration that can obtain the output characteristics regarding pressure and temperature as shown in FIGS. 3 and 4.

Further, the temperature characteristic adjusting means 20g described in the embodiment of the present invention includes the positive temperature coefficient adjusting resistor 20c,
Although it has the positive temperature coefficient resistor 20d, the thermistor 20e and the thermistor characteristic adjusting resistor 20f, the temperature characteristic adjusting means in the present invention may be any one that includes at least the positive temperature coefficient resistor and the thermistor.

Further, in the embodiment of the present invention, although there is a slight gap between the base plate 3 and the positive temperature coefficient resistor 20d of the temperature characteristic adjusting means 21g and the thermistor 20e, a heat conducting member is interposed in this gap. By doing so, a more linear output voltage characteristic T4 can be obtained. As the heat conduction member, for example, Shin-Etsu Chemical Co., Ltd., model G747,
The product name is oil compound.

[0049]

According to the present invention, a pressure sensitive element having a piezoresistive effect is formed on a semiconductor substrate, a bridge circuit is formed by using the pressure sensitive element, and a single semiconductor sensor having a thin diaphragm portion is formed. A semiconductor sensor device that obtains a first detection signal relating to the pressure of a fluid and a second detection signal relating to the temperature of the fluid by means of which it is possible to detect pressure and temperature with a simple configuration without complicating the structure. In addition, by further linearizing the output voltage characteristic indicating the relationship between the temperature and the output voltage, the temperature detection accuracy can be improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of essential parts showing a pressure-temperature detection device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a circuit configuration of the above embodiment.

FIG. 3 is a diagram showing a relationship between pressure and output voltage according to the above embodiment.

FIG. 4 is a diagram showing a relationship between temperature and output voltage according to the embodiment.

FIG. 5 is a diagram showing the relationship between the temperature and the combined resistance of the positive temperature coefficient adjusting resistor and the positive temperature coefficient resistor according to the embodiment.

FIG. 6 is a diagram showing the relationship between the temperature and the combined resistance of the thermistor and the thermistor characteristic adjusting resistor in the embodiment.

FIG. 7 is a diagram showing the relationship between the temperature of the above embodiment and the combined resistance of the temperature characteristic adjusting means.

FIG. 8 is a diagram showing the relationship between the temperature and the reference voltage of the constant current source circuit according to the embodiment.

FIG. 9 is a diagram showing a conventional relationship between temperature and output voltage.

[Explanation of symbols]

1 lower case 1a Pressure introduction part 1c Pressure introduction hole (introduction part) 3 base plate 3a Flange (flange) 3b mounting part 3c hole 4 Semiconductor sensor 5 circuit board 5a Storage hole 20 constant current source circuit 20c Positive temperature coefficient adjustment resistor 20d Positive temperature coefficient resistance 20e thermistor 20f Thermistor characteristic adjustment resistor 20g Temperature characteristic adjustment means 21 bridge circuit 22, 24 Pressure detection amplifier circuit (first output section) 23 Temperature detection amplifier circuit (second output section) Ra to Rd resistance (pressure sensitive element) va, vb intermediate voltage vc voltage across both ends A Pressure temperature detection device (semiconductor sensor device)

Continued front page    F term (reference) 2F055 AA40 BB20 CC02 DD05 EE14                       FF02 GG11 GG32                 4M112 AA01 BA01 CA01 CA09 CA11                       CA12 CA13 DA12 DA18 EA02                       EA10 EA11 EA14 FA01 FA02                       FA05 GA01

Claims (5)

[Claims] 1. A pressure sensitive element having a piezoresistive effect is formed on a semiconductor substrate, a bridge circuit is formed using the pressure sensitive element, and a single semiconductor sensor having a thin diaphragm portion is used to apply a fluid pressure. Is a semiconductor sensor device that obtains a first detection signal relating to the temperature of the fluid and a second detection signal relating to the temperature of the fluid, the pressure introducing portion having an inlet for introducing the fluid; The introduction port is provided by providing a mounting portion in which a hole for transmitting pressure and temperature is provided and arranging the semiconductor sensor, and by joining a collar portion extended from the mounting portion to the pressure introducing portion. And a circuit board electrically connected to the semiconductor sensor, the circuit board having a base plate disposed so as to close one end of the base plate, a storage hole portion that is located on the base plate, and stores the semiconductor sensor. A plate, a constant current source circuit provided on the circuit board for supplying a predetermined constant current to the bridge circuit, and a state of adjusting the temperature characteristic of the second detection signal and being located in the vicinity of the base plate. 2. A semiconductor sensor device, comprising: a temperature characteristic adjusting means disposed on the circuit board. 2. The semiconductor sensor device according to claim 1, wherein the temperature characteristic adjusting means includes at least a thermistor and a positive temperature coefficient resistor. 3. The semiconductor sensor device according to claim 1, wherein the temperature characteristic adjusting means is arranged at a position facing the flange portion of the circuit board. 4. A heat transfer member is arranged between the collar portion and the temperature characteristic adjusting means.
4. The semiconductor sensor device according to claim 3. 5. The semiconductor sensor device according to claim 1, wherein the mounting portion is provided at a position that is at least one step higher than the collar portion.