JP2003204078A5 - - Google Patents
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- JP2003204078A5 JP2003204078A5 JP2003029315A JP2003029315A JP2003204078A5 JP 2003204078 A5 JP2003204078 A5 JP 2003204078A5 JP 2003029315 A JP2003029315 A JP 2003029315A JP 2003029315 A JP2003029315 A JP 2003029315A JP 2003204078 A5 JP2003204078 A5 JP 2003204078A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003029315A JP4815732B2 (en) | 1998-12-08 | 2003-02-06 | Nitride semiconductor device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-348762 | 1998-12-08 | ||
| JP34876298 | 1998-12-08 | ||
| JP1998348762 | 1998-12-08 | ||
| JP2003029315A JP4815732B2 (en) | 1998-12-08 | 2003-02-06 | Nitride semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34866599A Division JP3424629B2 (en) | 1998-12-08 | 1999-12-08 | Nitride semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003204078A JP2003204078A (en) | 2003-07-18 |
| JP2003204078A5 true JP2003204078A5 (en) | 2007-02-01 |
| JP4815732B2 JP4815732B2 (en) | 2011-11-16 |
Family
ID=27666144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003029315A Expired - Fee Related JP4815732B2 (en) | 1998-12-08 | 2003-02-06 | Nitride semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4815732B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3839799B2 (en) * | 2003-08-06 | 2006-11-01 | ローム株式会社 | Semiconductor light emitting device |
| DE102004025610A1 (en) * | 2004-04-30 | 2005-11-17 | Osram Opto Semiconductors Gmbh | Optoelectronic component with several current spreading layers and method for its production |
| JP2006114886A (en) * | 2004-09-14 | 2006-04-27 | Showa Denko Kk | N-type group iii nitride semiconductor lamination structure |
| KR100608928B1 (en) | 2004-11-30 | 2006-08-08 | 광주과학기술원 | ?-? nitride compound semiconductor light-emitting device and fabrication method thereof |
| JP5068020B2 (en) * | 2006-02-20 | 2012-11-07 | シャープ株式会社 | Manufacturing method of nitride semiconductor light emitting device |
| JP4640427B2 (en) | 2008-03-14 | 2011-03-02 | ソニー株式会社 | GaN-based semiconductor light-emitting device, light-emitting device assembly, light-emitting device, method for manufacturing GaN-based semiconductor light-emitting device, driving method for GaN-based semiconductor light-emitting device, and image display device |
| JP5229048B2 (en) * | 2009-03-27 | 2013-07-03 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device and method of manufacturing the same |
| KR101712549B1 (en) * | 2010-01-05 | 2017-03-22 | 서울바이오시스 주식회사 | Light emitting diode having spacer layer |
| EP2523228B1 (en) * | 2010-01-05 | 2017-04-26 | Seoul Viosys Co., Ltd | Light emitting diode |
| KR101648948B1 (en) * | 2010-06-04 | 2016-08-17 | 서울바이오시스 주식회사 | Reliable light emitting diode and method of fabricating the same |
| KR101936312B1 (en) | 2012-10-09 | 2019-01-08 | 엘지이노텍 주식회사 | Light emitting device |
| KR102042181B1 (en) | 2012-10-22 | 2019-11-07 | 엘지이노텍 주식회사 | Light emitting device |
| JP6124740B2 (en) * | 2013-08-30 | 2017-05-10 | シャープ株式会社 | Nitride semiconductor light emitting device manufacturing method, nitride semiconductor light emitting device, and base substrate for nitride semiconductor light emitting device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2744503B2 (en) * | 1990-02-05 | 1998-04-28 | 日本電信電話株式会社 | Surface light emitting device |
| JP2795294B2 (en) * | 1991-10-12 | 1998-09-10 | 日亜化学工業株式会社 | A method for growing a gallium aluminum nitride semiconductor crystal. |
| JP2890390B2 (en) * | 1994-07-06 | 1999-05-10 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
| JP3010412B2 (en) * | 1994-09-14 | 2000-02-21 | ローム株式会社 | Semiconductor light emitting device |
| JP3141824B2 (en) * | 1994-12-22 | 2001-03-07 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| JP3785660B2 (en) * | 1995-10-17 | 2006-06-14 | ソニー株式会社 | Semiconductor light emitting device |
| JPH10145004A (en) * | 1996-11-06 | 1998-05-29 | Toyoda Gosei Co Ltd | Gan system light emitting element |
| CN1964093B (en) * | 1997-01-09 | 2012-06-27 | 日亚化学工业株式会社 | Nitride semiconductor device |
| JP3448196B2 (en) * | 1997-07-25 | 2003-09-16 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| JP3271661B2 (en) * | 1998-12-08 | 2002-04-02 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP3063757B1 (en) * | 1998-11-17 | 2000-07-12 | 日亜化学工業株式会社 | Nitride semiconductor device |
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2003
- 2003-02-06 JP JP2003029315A patent/JP4815732B2/en not_active Expired - Fee Related