JP2003203948A - Ic chip connection device - Google Patents
Ic chip connection deviceInfo
- Publication number
- JP2003203948A JP2003203948A JP2002002970A JP2002002970A JP2003203948A JP 2003203948 A JP2003203948 A JP 2003203948A JP 2002002970 A JP2002002970 A JP 2002002970A JP 2002002970 A JP2002002970 A JP 2002002970A JP 2003203948 A JP2003203948 A JP 2003203948A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- receiving member
- pressure receiving
- substrate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は基板とＩＣチップと
を接着剤を介して接続する際に問題になる、接着剤の硬
化処理のための長時間の加熱工程を短縮した接続装置に
関するものである。
【０００２】
【従来の技術】基板とＩＣチップとを接着剤を介して接
続するＩＣチップの従来の接続方法について図２を用い
て説明する。
【０００３】従来の接続装置はオーブン硬化炉５と、基
板１を支持する支持体６と、加圧力を発生する加圧部７
と、前記加圧部７の圧力をＩＣチップ２に印加するため
の受圧部材ベース９１と接ＩＣチップ部材９２とからな
る受圧部材９と、受圧部材ベース９１と接ＩＣチップ部
材９２とを介する構造体９３と、前記受圧部材９とＩＣ
チップ２の裏面との間に配置されて受圧部材９を保護す
るフィルム８から構成されている。
【０００４】受圧部材９は加圧部７の空気室７１に高圧
気体が投入されると可撓性フィルム７２を介して、支柱
１０の案内に沿って押し下げられ、接ＩＣチップ部材９
２がＩＣチップ２の上面に平行に突き当たり、加圧部７
で発生した推力がＩＣチップ２に印加される。
【０００５】基板１上に接着剤３を介して搭載されたＩ
Ｃチップ２はこの状態でオーブン硬化炉５による加熱工
程を経て接着剤３の硬化を済ませて、ＩＣチップ２の接
続工程が完了する。
【０００６】この接続装置の構造は、基板１とＩＣチッ
プ２との温度の均一性を高め、かつ均一な圧力を印加し
た状態で接着剤３の硬化を済ませ、その後常温に戻すと
ことにより、ＩＣチップと接着剤と基板との間の熱歪、
接着歪による内部応力を極力低減できるため、信頼性の
高い実装構造体を製造することにきわめて効果的であ
る。
【０００７】特に長尺の基板に複数個のＩＣチップを接
続する実装構造体、いわゆるマルチチップモジュール基
板の長手方向の反りの低減においてはきわめて効果的な
ものである。
【０００８】
【発明が解決しようとする課題】ところでこのようなＩ
Ｃチップの接続装置においては、オーブン硬化炉５によ
る加熱を行い、支持体、加圧部、受圧部材などで構成す
る圧力印加部本体を雰囲気加熱、雰囲気冷却していたた
めに温度上昇、温度下降が緩慢で、ＩＣチップと基板と
を接着する接着剤の硬化処理のための加熱工程に長時間
を費やしていた。
【０００９】
【課題を解決するための手段】本発明は上記従来例の問
題点を解決するために、基板を支持する支持体と、加圧
力を発生する加圧部と、前記加圧部の圧力をＩＣチップ
に印加するための受圧部材ベースと接ＩＣチップ部材と
からなる受圧部材と、受圧部材ベースと接ＩＣチップ部
材とを介する構造体と、前記受圧部材とＩＣチップ裏面
の間に配置されて受圧部材を保護するフィルムから構成
され、基板とＩＣチップとを接着剤を介して接続するＩ
Ｃチップの接続装置において、強制加熱機能と強制空冷
機能を持つ気体噴射装置を備えたことを特徴とするＩＣ
チップの接続装置を提供する。
【００１０】
【発明の実施の形態】以下、本発明の実施例について図
面を用いて説明する。
【００１１】（実施例）図１は本発明に関わる接続装置
の構成を示す断面図で、基板１を支持する支持体６と、
加圧力を発生する加圧部７と、前記加圧部の圧力をＩＣ
チップ２に印加するための受圧部材ベース９１と接ＩＣ
チップ部材９２とからなる受圧部材９と、受圧部材ベー
ス９１と接ＩＣチップ部材９２とを介する構造体９３
と、前記受圧部材９とＩＣチップ２の裏面との間に配置
されて受圧部材９を保護するフィルム８と強制加熱機能
と強制空冷機能を持つ気体噴射装置１２で構成される。
【００１２】支持体６と加圧部７と受圧部材９と、受圧
部材ベース９１と接ＩＣチップ部材９２の間にある構造
体９３とからなる圧力印加部本体４は、気体噴射装置１
２から発生される加熱空気または常温空気を送風案内す
るダクト１１内に設置される。
【００１３】本実施例では、石英ガラス製の接基板部材
６２、ＳＵＳ製の受圧部材ベース９１、石英ガラス製の
接ＩＣチップ部材９２、厚さ１ｍｍの耐熱ゴム(フッ素
ゴム)製の加圧部７の可撓性フィルム７２、受圧部材ベ
ース９１と接ＩＣチップ部材９２とを介する構造体９
３、厚さ５μｍのＳＵＳ製の受圧部材とＩＣチップ裏面
の間に配置されて受圧部材９を保護するフィルム８、強
制加熱機能と強制空冷機能を持つ八光電機製作所製の熱
風発生機を気体噴射装置１２に用いた。
【００１４】以下にＩＣの接続方法について説明する。
【００１５】前述のような構成の接続装置の圧力印加部
本体４の中に、接着剤を介して８個のＩＣが仮接続され
た基板を装着し、加圧部７の空気室７１に０．３ＭＰａ
の圧縮空気を供給し続けながら圧力印加部本体４を取り
囲むダクト１１に気体噴射装置１２で発生した１７０℃
の加熱空気を５ｍ3／分、３０分間送り込んで接着剤を
加熱硬化した。
【００１６】次に圧力印加部本体４を取り囲むダクト１
１に気体噴射装置１２で発生した常温の空気を５ｍ3／
分、３０分間送り込み、圧力印加部本体、ＩＣチップ、
接着剤、基板が常温に戻ったところで推力の印加を解除
し、実装構造体となったＩＣチップ、接着剤、基板を取
り出し、ＩＣチップの接続を完了した。
【００１７】ここで供した基板等は、基板１に厚さ０．
６２５ｍｍのシリコン基板、ＩＣチップ２に厚さ０．１
７５ｍｍ、１０．１１ｍｍ×２．５ｍｍの大きさのＩ
Ｃ、接着剤３にソニーケミカル株式会社製の異方性導電
膜（ＡＣＦ）である。
【００１８】その結果、従来は支持体と加圧部と受圧部
材などで構成する圧力印加部本体４に接着剤を介してＩ
Ｃチップを搭載された基板を装着、加圧し、この状態で
オーブン硬化炉による約５時間の、加熱・昇温してから
常温に戻すまでの加熱工程を経て接着剤の硬化を済ませ
て、ＩＣチップの接続工程を完了させていたところ、本
実施例では上記の様に加熱工程は約１時間ほどで完了し
た。
【００１９】また、圧力印加部本体からＩＣチップの接
続を完了した基板を取り出した後、ＩＣの接続抵抗値を
確認したところ、８個のＩＣのすべての抵抗値測定部が
約６０ｍΩの良好な抵抗値を示した。さらに基板の長手
方向の反りについても測定したところ約５μｍの良好な
値を示した。
【００２０】
【発明の効果】以上詳細に説明したように、本発明のＩ
Ｃチップの接続装置においては、圧力印加部本体４を、
気体噴射装置１２から発生される加熱空気または常温空
気を送風案内するダクト１１内に設置する構成とし、強
制加熱と強制空冷することで基板１、ＩＣチップ２、接
着剤３も含めて圧力印加部本体４の熱交換を速め、ＩＣ
チップ接続時の加熱工程を短縮することが可能となる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting a substrate and an IC chip via an adhesive, which is a problem for a long time for curing the adhesive. The present invention relates to a connection device in which a heating step is shortened. 2. Description of the Related Art A conventional method for connecting an IC chip to a substrate and an IC chip via an adhesive will be described with reference to FIG. A conventional connection device includes an oven curing furnace 5, a support 6 for supporting the substrate 1, and a pressurizing section 7 for generating a pressing force.
And a pressure receiving member 9 including a pressure receiving member base 91 and a contact IC chip member 92 for applying the pressure of the pressurizing section 7 to the IC chip 2, and a structure via the pressure receiving member base 91 and the contact IC chip member 92 Body 93, said pressure receiving member 9 and IC
It is composed of a film 8 disposed between the back surface of the chip 2 and protecting the pressure receiving member 9. When a high-pressure gas is injected into the air chamber 71 of the pressurizing section 7, the pressure receiving member 9 is pushed down along the guide of the column 10 through the flexible film 72, and the contact IC chip member 9 is pressed.
2 comes into contact with the upper surface of the IC chip 2
Is applied to the IC chip 2. The I mounted on the substrate 1 via the adhesive 3
In this state, the adhesive 3 is cured through the heating process by the oven curing furnace 5 in this state, and the connection process of the IC chip 2 is completed. The structure of this connection device is to improve the temperature uniformity between the substrate 1 and the IC chip 2 and to cure the adhesive 3 in a state where a uniform pressure is applied, and thereafter to return to normal temperature. Thermal strain between IC chip, adhesive and substrate,
Since the internal stress due to the adhesive strain can be reduced as much as possible, it is extremely effective in manufacturing a highly reliable mounting structure. Particularly, it is very effective in reducing a warp in a longitudinal direction of a mounting structure for connecting a plurality of IC chips to a long substrate, that is, a so-called multi-chip module substrate. [0008] By the way, such I
In the connection device for the C-chip, heating is performed by the oven curing furnace 5, and the pressure application unit main body including the support, the pressurizing unit, the pressure receiving member, and the like is heated and cooled in the atmosphere. It has been slow and has spent a long time in the heating step for curing the adhesive for bonding the IC chip and the substrate. In order to solve the above-mentioned problems of the prior art, the present invention provides a support for supporting a substrate, a pressurizing section for generating a pressing force, and a pressurizing section for the pressurizing section. A pressure receiving member comprising a pressure receiving member base for applying pressure to the IC chip and a contact IC chip member, a structure interposed between the pressure receiving member base and the contact IC chip member, and disposed between the pressure receiving member and the back surface of the IC chip. And a film for protecting the pressure receiving member, and connecting the substrate and the IC chip via an adhesive.
An IC characterized by comprising a gas injection device having a forced heating function and a forced air cooling function in a connection device for a C chip.
A chip connecting device is provided. Embodiments of the present invention will be described below with reference to the drawings. (Embodiment) FIG. 1 is a cross-sectional view showing the structure of a connection device according to the present invention.
A pressurizing unit 7 for generating a pressing force;
Pressure receiving member base 91 for applying to chip 2 and contact IC
A pressure receiving member 9 comprising a chip member 92 and a structure 93 via a pressure receiving member base 91 and a contact IC chip member 92
And a film 8 disposed between the pressure receiving member 9 and the back surface of the IC chip 2 to protect the pressure receiving member 9 and a gas injection device 12 having a forced heating function and a forced air cooling function. The pressure applying unit main body 4 including the support 6, the pressurizing unit 7, the pressure receiving member 9, and the structure 93 between the pressure receiving member base 91 and the contact IC chip member 92 is provided by the gas injection device 1.
2 is installed in a duct 11 that guides the heated air or the room temperature air generated from the duct 2. In this embodiment, a contact substrate member 62 made of quartz glass, a pressure-receiving member base 91 made of SUS, a contact IC chip member 92 made of quartz glass, and a pressure member made of heat-resistant rubber (fluorine rubber) having a thickness of 1 mm. 7, the structure 9 via the pressure receiving member base 91 and the contact IC chip member 92
3. A film 8 disposed between the SUS pressure receiving member having a thickness of 5 μm and the back surface of the IC chip to protect the pressure receiving member 9; Used for the injection device 12. Hereinafter, a method of connecting ICs will be described. A substrate, to which eight ICs are temporarily connected via an adhesive, is mounted in the pressure applying unit main body 4 of the connection device having the above-described configuration. .3MPa
170 ° C generated by the gas injection device 12 in the duct 11 surrounding the pressure applying unit main body 4 while continuously supplying compressed air of
Was sent at 5 m 3 / min for 30 minutes to heat and cure the adhesive. Next, the duct 1 surrounding the pressure applying unit body 4
First, 5 m 3 / air of room temperature generated by the gas injection device 12 was used.
Minute, 30 minutes feed, pressure applying unit body, IC chip,
When the adhesive and the substrate returned to room temperature, the application of the thrust was released, and the IC chip, the adhesive, and the substrate which became the mounting structure were taken out, and the connection of the IC chip was completed. The substrate and the like provided here have a thickness of 0.
625mm silicon substrate, IC chip 2 with thickness 0.1
75 mm, 10.11 mm x 2.5 mm I
C, the adhesive 3 is an anisotropic conductive film (ACF) manufactured by Sony Chemical Corporation. As a result, the pressure applying unit body 4 which is conventionally composed of a support, a pressurizing unit, a pressure receiving member, etc.
The substrate on which the C chip is mounted is mounted and pressurized. In this state, the adhesive is cured through a heating step of heating and raising the temperature in an oven curing furnace for about 5 hours until the temperature returns to the normal temperature. While the step of connecting the chips was completed, the heating step was completed in about one hour as described above in this embodiment. Further, after taking out the substrate to which the connection of the IC chip was completed from the main body of the pressure applying unit, the connection resistance values of the ICs were confirmed. As a result, all the resistance measurement units of the eight ICs had a good resistance of about 60 mΩ. The resistance values are shown. Further, when the warp in the longitudinal direction of the substrate was measured, a good value of about 5 μm was shown. As described in detail above, according to the present invention,
In the connection device for the C chip, the pressure applying unit main body 4 is
A pressure application unit including the substrate 1, the IC chip 2, and the adhesive 3 is provided by being installed in a duct 11 for guiding heated air or room-temperature air generated from the gas injection device 12 and forcing the air, by forced heating and forced air cooling. Speeds up the heat exchange of the main body 4, IC
It is possible to shorten the heating process when connecting the chips.
【図面の簡単な説明】 【図１】 本発明に関わる接続装置の構成を示す断面図 【図２】 従来の接続装置を示す断面図 【符号の説明】 １ 基板 ２ ＩＣチップ ３ 接着剤 ４ 圧力印加部本体 ５ オーブン硬化炉 ６ 支持体 ６１ 支持体ベース ６２ ：接基板部材 ７ 加圧部 ７１ 空気室 ７２ 可撓性フィルム ８ フィルム ９ 受圧部材 ９１ 受圧部材ベース ９２ 接ＩＣチップ部材 ９３ 構造体 １０ 支柱 １１ ダクト １２ 気体噴射装置 １３ 加熱気体または常温気体が流れる方向[Brief description of the drawings] FIG. 1 is a cross-sectional view showing a configuration of a connection device according to the present invention. FIG. 2 is a cross-sectional view showing a conventional connection device. [Explanation of symbols] 1 substrate 2 IC chip 3 adhesive 4 Pressure applying unit body 5 Oven curing oven 6 Support 61 Support base 62: Contact substrate member 7 Pressure section 71 Air Chamber 72 Flexible film 8 Film 9 Pressure receiving member 91 Pressure receiving member base 92 Contact IC chip member 93 structure 10 props 11 Duct 12 Gas injection device 13 Direction of flow of heated gas or normal temperature gas
Claims (1)
する加圧部と、前記加圧部の圧力をＩＣチップに印加す
るための受圧部材ベースと接ＩＣチップ部材とからなる
受圧部材と、受圧部材ベースと接ＩＣチップ部材とを介
する構造体と、前記受圧部材とＩＣチップ裏面の間に配
置されて受圧部材を保護するフィルムから構成され、基
板とＩＣチップとを接着剤を介して接続するＩＣチップ
の接続装置において、強制加熱機能と強制空冷機能を持
つ気体噴射装置を備えたことを特徴とするＩＣチップの
接続装置。Claims: 1. A support for supporting a substrate, a pressing unit for generating a pressing force, a pressure receiving member base for applying the pressure of the pressing unit to the IC chip, and a contact IC chip. A pressure receiving member comprising: a pressure receiving member base; a structure interposed between the pressure receiving member base and the contact IC chip member; and a film disposed between the pressure receiving member and the back surface of the IC chip to protect the pressure receiving member. A connecting device for connecting an IC chip through an adhesive, comprising a gas ejecting device having a forced heating function and a forced air cooling function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002002970A JP2003203948A (en) | 2002-01-10 | 2002-01-10 | Ic chip connection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002002970A JP2003203948A (en) | 2002-01-10 | 2002-01-10 | Ic chip connection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003203948A true JP2003203948A (en) | 2003-07-18 |
Family
ID=27642683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002002970A Pending JP2003203948A (en) | 2002-01-10 | 2002-01-10 | Ic chip connection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003203948A (en) |
-
2002
- 2002-01-10 JP JP2002002970A patent/JP2003203948A/en active Pending
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